CN202076300U - Graphite carrying plate for direct coating of silicon slices - Google Patents
Graphite carrying plate for direct coating of silicon slices Download PDFInfo
- Publication number
- CN202076300U CN202076300U CN2011200991256U CN201120099125U CN202076300U CN 202076300 U CN202076300 U CN 202076300U CN 2011200991256 U CN2011200991256 U CN 2011200991256U CN 201120099125 U CN201120099125 U CN 201120099125U CN 202076300 U CN202076300 U CN 202076300U
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- silicon chip
- graphite
- silicon
- carrying plate
- coated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a graphite carrying plate for direct coating of silicon slices. A plurality of silicon slice carrying grooves are evenly distributed on one surface of the graphite carrying plate; the depth of each groove ranges from 200 micrometers to 400 micrometers; and guide rails are arranged on the surface of the graphite carrying plate opposite to the silicon slice carrying grooves and at positions close to ends of the graphite carrying plate. When the graphite carrying plate for direct coating of the silicon slices is used, the silicon slices are placed in the grooves, silicon nitride layers cannot be coated at the edges of the silicon slices when the silicon slices are coated, and inversion layers are avoided, so that parallel resistance of batteries is improved greatly and reliability of the batteries is enhanced.
Description
Technical field
The utility model relates to crystal-silicon solar cell, is specifically related to the silicon chip film-coated graphite support plate of using of a kind of direct method.
Background technology
Solar energy is human inexhaustible regenerative resource, also is clean energy resource, does not produce any environmental pollution.At present, the flow process that is applied to make solar cell is: surface clean and structuring, diffusion, etching trimming, coated with antireflection film, silk screen printing, sintering form ohmic contact, test.This commercialization solar cell manufacturing technology is simple relatively, cost is lower, is fit to industrialization, automated production, thereby has obtained extensive use.
In the crystal-silicon solar cell production process; usually can be in order to improve passivation effect and anti-reflective effect at the surface of silicon chip plating one deck silicon nitride film, the conventional method that adopts is a PECVD(Plasma Enhanced Chemical Vapor Deposition plasma reinforced chemical vapour deposition) the plating silicon nitride.Document [APPLIED PHYSICS LETTERS 94,063509,2009] the report silicon nitride is a kind of dielectric layer with fixed positive charge, emitter to P type substrate diffusion system knot has good passivation, but can form inversion layer on P type substrate back of the body surface and silicon chip edge, cause the leakage current of solar cell to increase, the crystal-silicon solar cell electrical property is had very big deleterious effects.In order to eliminate this silicon nitride to carrying on the back the deleterious effects at surface and edge, the photovoltaic researcher has done a large amount of work.Chinese patent CN200920292634.3 adopts the method for horizontal positioned silicon chip to realize reducing the influence of silicon nitride to the back side and silicon chip edge, but this horizontal graphite boat has operating difficulties in actual production and characteristics such as yield poorly.
The utility model content
The purpose of this utility model is to overcome the deficiency that above prior art exists, provide a kind of can be when silicon chip is carried out plated film to the direct method plated film graphite support plate of silicon chip edge and back side coating film.
The utility model technical solution problem adopts following technical scheme:
The silicon chip film-coated graphite support plate of using of a kind of direct method comprises the graphite loading plate, uniform a plurality of silicon chip carrying grooves on the one side of graphite loading plate, and the degree of depth of described groove is the 200-400 micron.
Further, the face relative with the face that is provided with silicon chip carrying groove is provided with guide rail on the graphite loading plate.(please replenish the effect that guide rail is set)
Further, described guide rail is arranged at next-door neighbour's graphite loading plate end position.
Further, described graphite loading plate is square.
Further, described silicon chip carrying groove is and the suitable square groove of silicon chip size.
The beneficial effects of the utility model are as follows: when the silicon chip film-coated usefulness of direct method of the present utility model graphite support plate uses, silicon chip is placed in the groove, because silicon chip has only the front to expose, so to silicon chip when carrying out plated film, silicon nitride layer just can not be plated in the edge of silicon chip, just can not form inversion layer yet, promote the parallel resistance of battery greatly, improve the reliability of battery; Direct method of the present utility model in addition is silicon chip film-coated simple, easy to prepare with the graphite carrying board structure.
Description of drawings
Fig. 1 is the silicon chip film-coated main TV structure schematic diagram with the graphite support plate of the utility model direct method;
Fig. 2 is the silicon chip film-coated A-A cross section structure schematic diagram with the graphite support plate of the utility model direct method;
Mark is illustrated as among the figure: 1-graphite loading plate; The 2-groove; The 3-guide rail.
Embodiment:
Embodiment 1
As shown in Figure 1 and Figure 2, the utility model adopts a kind of square graphite loading plate 1, is uniform-distribution with 16 silicon chip carrying grooves 2 that match with the silicon chip size on graphite loading plate 1, and the degree of depth of silicon chip carrying groove 2 is 300 microns, and is square groove.The face relative with the face that is provided with silicon chip carrying groove 2 is provided with guide rail 3 on the graphite loading plate 1, guide rail 3 is arranged at next-door neighbour's graphite loading plate 1 end position.
The number of silicon chip carrying groove 2 can be set as required in concrete the enforcement.
It should be noted that at last: the above only is preferred embodiment of the present utility model, be not limited to the utility model, although the utility model is had been described in detail with reference to previous embodiment, for a person skilled in the art, it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement.All within spirit of the present utility model and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (5)
1. silicon chip film-coated graphite support plate of using of direct method is characterized in that: comprise the graphite loading plate, and uniform a plurality of silicon chips carrying grooves on the one side of graphite loading plate, the degree of depth of described groove is the 200-400 micron.
2. the silicon chip film-coated graphite support plate of using of direct method according to claim 1 is characterized in that: face relative with the face that is provided with silicon chip carrying groove on the graphite loading plate is provided with guide rail.
3. the silicon chip film-coated graphite support plate of using of direct method according to claim 2 is characterized in that: described guide rail is arranged at next-door neighbour's graphite loading plate end position.
4. the silicon chip film-coated graphite support plate of using of direct method according to claim 1, it is characterized in that: described graphite loading plate is square.
5. require the silicon chip film-coated graphite support plate of using of 1 described direct method according to profit, it is characterized in that: described silicon chip carrying groove is and the suitable square groove of silicon chip size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200991256U CN202076300U (en) | 2011-04-07 | 2011-04-07 | Graphite carrying plate for direct coating of silicon slices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200991256U CN202076300U (en) | 2011-04-07 | 2011-04-07 | Graphite carrying plate for direct coating of silicon slices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202076300U true CN202076300U (en) | 2011-12-14 |
Family
ID=45114388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200991256U Expired - Fee Related CN202076300U (en) | 2011-04-07 | 2011-04-07 | Graphite carrying plate for direct coating of silicon slices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202076300U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484838A (en) * | 2013-09-18 | 2014-01-01 | 无锡绿波新能源设备有限公司 | Welded type guide rail for PECVD carrier plate |
| CN104867850A (en) * | 2014-02-20 | 2015-08-26 | 上海理想万里晖薄膜设备有限公司 | Heterojunction solar cell support plate |
| CN110429054A (en) * | 2018-08-29 | 2019-11-08 | 协鑫集成科技股份有限公司 | The production method of film forming carrier and solar battery |
| CN113770122A (en) * | 2021-09-13 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | Cleaning method of PECVD (plasma enhanced chemical vapor deposition) equipment |
-
2011
- 2011-04-07 CN CN2011200991256U patent/CN202076300U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103484838A (en) * | 2013-09-18 | 2014-01-01 | 无锡绿波新能源设备有限公司 | Welded type guide rail for PECVD carrier plate |
| CN104867850A (en) * | 2014-02-20 | 2015-08-26 | 上海理想万里晖薄膜设备有限公司 | Heterojunction solar cell support plate |
| CN110429054A (en) * | 2018-08-29 | 2019-11-08 | 协鑫集成科技股份有限公司 | The production method of film forming carrier and solar battery |
| CN110429054B (en) * | 2018-08-29 | 2022-04-15 | 协鑫集成科技股份有限公司 | Film forming carrier and manufacturing method of solar cell |
| CN113770122A (en) * | 2021-09-13 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | Cleaning method of PECVD (plasma enhanced chemical vapor deposition) equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: ZHEJIANG RENESOLA JIANGSU CO., LTD. Free format text: FORMER NAME: WUXI JIACHENG SOLAR ENERGY TECHNOLOGY CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 214200 Jiangsu city of Wuxi province Jiangsu Yixing Qingyuan Road Economic Development Zone No. 27 (East) Patentee after: Zhejiang Yuhui Solar Energy Jiangsu Co., Ltd. Address before: 214200 Jiangsu city of Wuxi province Jiangsu Yixing Qingyuan Road Economic Development Zone No. 27 (East) Patentee before: Wuxi Jiacheng Solar Energy Technology Co., Ltd. |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160307 Address after: The British Virgin Islands of Tortola Rodez VG1110 Patentee after: Fai Fai investment management company Address before: 214200 Jiangsu city of Wuxi province Jiangsu Yixing Qingyuan Road Economic Development Zone No. 27 (East) Patentee before: Zhejiang Yuhui Solar Energy Jiangsu Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111214 Termination date: 20190407 |