CN108766923A - The front electrode screen structure and preparation method of solar cell - Google Patents
The front electrode screen structure and preparation method of solar cell Download PDFInfo
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- CN108766923A CN108766923A CN201810866953.4A CN201810866953A CN108766923A CN 108766923 A CN108766923 A CN 108766923A CN 201810866953 A CN201810866953 A CN 201810866953A CN 108766923 A CN108766923 A CN 108766923A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000004744 fabric Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 7
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 238000007639 printing Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/14—Forme preparation for stencil-printing or silk-screen printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses the front electrode screen structures and preparation method of a kind of solar cell, it is formed with several first Mark points by the heavily doped region of the positive laser doping in solar cell, several 2nd Mark points are arranged in main gate line on front electrode screen structure, and several 2nd Mark points are corresponded with several first Mark points；The alignment for realizing the front electrode screen structure and solar cell is corresponded with several first Mark points by several 2nd Mark points, keeps several secondary grid lines corresponding with the heavily doped area of the laser doping of the solar cell；So that during silk-screen printing prepares electrode, the heavily doped area of the laser doping of solar cell is located just in the secondary grid line of the front printing of solar cell, so that secondary grid line forms Ohmic contact with heavily doped region, to improve the transfer efficiency of crystal silicon solar batteries.
Description
Technical field
The present invention relates to crystal silicon solar batteries technical field more particularly to a kind of front electrode halftones of solar cell
Structure.
Background technology
Solar energy resources are abundant, widely distributed, are most potential regenerative resources.With global energy shortage and
The problems such as environmental pollution, becomes increasingly conspicuous, solar energy power generating because its cleaning, it is safe and convenient, efficient the features such as, it has also become the world
Various countries' common concern and the new industry given priority to.
Crystal-silicon solar cell and component are the semiconductor devices for converting solar energy into electric energy, and the size of device is directly determined
Fixed final generated output needs design to be researched and developed by battery process to obtain higher battery conversion efficiency, using sharp
Photodoping selective emitter solar battery front electrode halftone graphic structure, can effectively improve crystal silicon battery transfer efficiency, from
And improve the generated energy of unit area.
Invention content
The present invention proposes a kind of the front electrode screen structure and preparation method of solar cell, to improve the crystal silicon sun
The transfer efficiency of energy battery.
To solve the above-mentioned problems, the present invention provides the following technical solutions：
A kind of front electrode screen structure of solar cell, the front electrode screen structure are used in screen printing electrode
When mask plate in the front of laser doping selective emitter solar battery as front electrode, wherein solar-electricity are set
The heavily doped region of the positive laser doping in pond is formed with several first Mark points；The front electrode screen structure includes screen frame,
It is provided with screen cloth in the screen frame, is provided on the screen cloth：Several main gate lines, several secondary grid lines, several anti-EL break grid structure and
Several 2nd Mark points；
It is mutually parallel, is mutually parallel between several secondary grid lines, and several main grids between several main gate lines
Line is mutually perpendicular to several secondary grid lines；
Several secondary grid lines are corresponding with the heavily doped region of positive laser doping of the solar cell；
Every main gate line is solid or hollow out polygonized structure；
It often arranges anti-EL grid structures of breaking and includes that several anti-EL being arranged at intervals between secondary grid line break grid sections, and anti-EL breaks grid section
It is vertical with secondary grid line, and be mutually parallel between the disconnected grid structures of anti-EL；
Several 2nd Mark points are arranged in main gate line, and several 2nd Mark points and described several first
Mark points correspond；It is corresponded with several first Mark points by several 2nd Mark points and realizes front electricity
The alignment of polar net plate structure and solar cell makes the heavily doped of several secondary grid lines and the laser doping of the solar cell
Area corresponds to.
In one embodiment of the invention, the quantity of the main gate line is 3-20 roots.
In one embodiment of the invention, the width of the main gate line is 0.1 to 2.5mm, the length of the main gate line
It is 100 to 165mm.
In one embodiment of the invention, the quantity of the secondary grid line is 80-200 roots.
In one embodiment of the invention, the width of the secondary grid line is 10um to 200um, the length of the pair grid line
For 10mm to 165mm.
In one embodiment of the invention, the quantity of the disconnected grid structures of the anti-EL is that 2-30 is arranged.
In one embodiment of the invention, the quantity of the first Mark points is 4-6, the 1 Mark points it is a diameter of
The quantity of 0.2-1.2mm, the 2nd Mark points are 4-6, a diameter of 0.2-1.2mm of the 2nd Mark points.
In one embodiment of the invention, the shape of the solar cell is the standard that positive square piece or quadrangle carry circular arc
Square piece, the wherein diameter of circular arc are more than 150mm.
In one embodiment of the invention, the base material of the solar cell is monocrystalline silicon or polysilicon.
A kind of preparation method of the front electrode screen structure of solar cell, includes the following steps：
S1:Screen frame is provided, screen cloth is provided in the screen frame；
S2:Several main gate lines and several secondary grid lines are formed in the screen cloth, and if being formed in several main gate lines
Dry 2nd Mark points；Wherein, it is mutually parallel, is mutually parallel between several pair grid lines, and several masters between several main gate lines
Grid line is mutually perpendicular to several secondary grid lines；The positive laser doping of several 2nd Mark points and solar cell
Several first Mark points that heavily doped region is formed correspond, and the laser doping of several main gate lines and solar cell
Heavily doped region corresponds to.
The present invention due to using the technology described above, is allowed to compared with prior art, have the advantages that following and actively imitate
Fruit：
1) the front electrode screen structure of solar cell provided by the invention, by swashing in the positive of solar cell
The heavily doped region of photodoping is formed with several first Mark points, the main gate line setting several second on front electrode screen structure
Mark points, and several 2nd Mark points are corresponded with several first Mark points；Pass through several 2nd Mark
Point corresponds the alignment for realizing the front electrode screen structure and solar cell with several first Mark points, makes described
Several pair grid lines are corresponding with the heavily doped area of the laser doping of the solar cell；So that preparing electrode in silk-screen printing
In the process, the heavily doped area of the laser doping of solar cell is located just in the secondary grid line of the front printing of solar cell,
So that secondary grid line forms Ohmic contact with heavily doped region, to improve the transfer efficiency of crystal silicon solar batteries.
Description of the drawings
Fig. 1 is the schematic diagram for the solar cell that the embodiment of the present invention is completed after laser doping selective emitter；
Fig. 2 is the schematic diagram of the solar cell front electrode screen structure of the embodiment of the present invention；
Fig. 3 is the partial enlarged view of the solar cell front electrode screen structure of the embodiment of the present invention.
In figure：100- silicon chips, the 1 Mark points of 101-, 200- front electrodes halftone, 201- screen frames, 202- screen cloths, 203-
The disconnected grid structure of main gate line, 204- pairs grid line, the anti-EL of 205-, 300- front electrode halftone partial enlargements, the 2nd Mark points of 301-.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments to the front electrode screen structure of solar cell proposed by the present invention and
Preparation method is described in further detail.According to following explanation and claims, advantages and features of the invention will become apparent from.
It should be noted that attached drawing is all made of very simplified form and uses non-accurate ratio, only to it is convenient, lucidly assist
Illustrate the purpose of the embodiment of the present invention.
- Fig. 3 is please referred to Fig.1, as shown in Figure 1-Figure 3, an embodiment of the present invention provides a kind of front electricity of solar cell
Polar net plate structure, the front electrode screen structure are used to be arranged in screen printing electrode in the front of solar cell as just
The mask plate of face electrode, wherein the heavily doped region of the positive laser doping of the solar cell is formed with several first Mark
Point 101, specific first Mark points 101 are formed on the base material (silicon chip 100) of solar cell；The front electrode screen structure
200 include screen frame 201, is provided with screen cloth 202 in the screen frame 201, is provided on the screen cloth 202：It is several main gate lines 203, several
The disconnected grid structure 205 of secondary grid line 204, several anti-EL and several 2nd Mark points 301；
It is mutually parallel, is mutually parallel between several secondary grid lines 204, and if described between several main gate lines 203
Dry main gate line 203 is mutually perpendicular to several secondary grid lines 204；
Several secondary grid lines 204 are corresponding with the heavily doped region of positive laser doping of the solar cell；
Every main gate line 203 is solid or hollow out polygonized structure；
It often arranges the disconnected grid structures 205 of anti-EL and includes the disconnected grid sections of several anti-EL being arranged at intervals between secondary grid line 204, and anti-EL
Disconnected grid section is vertical with secondary grid line 204, and is mutually parallel between the disconnected grid structures of anti-EL 205；
Several 2nd Mark points 301 are arranged in main gate line 203, and several 2nd Mark points 301 with it is described
Several first Mark points 101 correspond；Pass through several 2nd Mark points 301 and several first Mark points 101 1
One corresponds to the alignment for realizing the front electrode screen structure and solar cell, makes several secondary grid lines 204 and the sun
The heavily doped area of the laser doping of energy battery corresponds to.So that during silk-screen printing prepares electrode, in solar cell
Front printing secondary grid line be located just on solar cell laser doping heavily doped area so that secondary grid line and heavily doped region
Ohmic contact is formed, to improve the transfer efficiency of crystal silicon solar batteries.
Wherein, the quantity of the main gate line 203 is 3-20 roots.The width of the main gate line 203 is 0.1 to 2.5mm, described
The length of main gate line 203 is 100 to 165mm.
Wherein, the quantity of the secondary grid line 204 is 80-200 roots.The width of the pair grid line 204 is 10um to 200um,
The length of the pair grid line 204 is 10mm to 165mm.
Wherein, the break quantity of grid structure 205 of the anti-EL is 2-30 rows.
The quantity of the first Mark points 101 is 4-6, a diameter of 0.2-1.2mm of the 1 Mark points 101, described the
The quantity of 2 Mark points 301 is 4-6, a diameter of 0.2-1.2mm of the 2nd Mark points 301.
In one embodiment of the invention, the shape of the solar cell is the standard that positive square piece or quadrangle carry circular arc
Square piece, the wherein diameter of circular arc are more than 150mm.Wherein, the base material of solar cell is monocrystalline silicon or polysilicon.
The preparation method of the front electrode screen structure of solar cell provided by the invention, includes the following steps：
S1:Screen frame is provided, screen cloth is provided in the screen frame；
S2:Several main gate lines and several secondary grid lines are formed in the screen cloth, and if being formed in several main gate lines
Dry 2nd Mark points；Wherein, it is mutually parallel, is mutually parallel between several pair grid lines, and several masters between several main gate lines
Grid line is mutually perpendicular to several secondary grid lines；The positive laser doping of several 2nd Mark points and solar cell
Several first Mark points that heavily doped region is formed correspond, and the laser doping of several main gate lines and solar cell
Heavily doped region corresponds to.
Meanwhile the preparation method of solar cell provided by the invention includes the following steps：
S11:Laser doping is carried out on silicon chip 100 after the diffusion, is needing the region for printing grid line to form heavy doping, together
When formed the 1 Mark points 101；
S12:In carrying out halftone manufacturing process, the 2nd Mark points 301 are formed in 203 region of main gate line of halftone；
S13:It is carried out the 1 Mark points 101 and the 2nd Mark points 301 when silk-screen printing prepares front electrode to silicon chip
Alignment, makes to ensure that secondary grid line is printed on heavily doped regional center when silk-screen printing.
Using the above scheme, laser doping is carried out by silicon chip 100 after the diffusion, selective emitter is formed, in shape
At the 1 Mark points 101 of formation while heavily doped area；When making halftone, the 2nd Mark points 301 are formed in main gate line；It is described
Mark points 101 and 301 position of the 2nd Mark points correspond, and in printing process, pass through the 1 Mark points 101 and second
Mark points 301 are precisely aligned, and secondary grid line 204 is made just to be printed on heavily doped area, form good Ohmic contact, improve crystal silicon
Solar cell transfer efficiency.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (10)
1. a kind of front electrode screen structure of solar cell, which is characterized in that the front electrode screen structure is used in silk
The mask plate as front electrode in the front of laser doping selective emitter solar battery is set when wire mark brush electrode,
The heavily doped region of the positive laser doping of middle solar cell is formed with several first Mark points；The front electrode screen structure
Including screen frame, it is provided with screen cloth in the screen frame, is provided on the screen cloth：Several main gate lines, several secondary grid lines, the disconnected grid of several anti-EL
Structure and several 2nd Mark points；
Be mutually parallel between several main gate lines, be mutually parallel between several secondary grid lines, and several main gate lines with
Several secondary grid lines are mutually perpendicular to；
Several secondary grid lines are corresponding with the heavily doped region of positive laser doping of the solar cell；
Every main gate line is solid or hollow out polygonized structure；
Often arrange anti-EL grid structures of breaking and include that several anti-EL being arranged at intervals between secondary grid line break grid sections, and anti-EL break grid section with it is secondary
Grid line is vertical, and is mutually parallel between the disconnected grid structures of anti-EL；
Several 2nd Mark points are arranged in main gate line, and several 2nd Mark points and several 1 Mark points
It corresponds；It is corresponded with several first Mark points by several 2nd Mark points and realizes the front electrode halftone
The alignment of structure and solar cell makes the heavily doped area pair of several secondary grid lines and the laser doping of the solar cell
It answers.
2. the front electrode screen structure of solar cell as described in claim 1, which is characterized in that the number of the main gate line
Amount is 3-20 roots.
3. the front electrode screen structure of solar cell as claimed in claim 1 or 2, which is characterized in that the main gate line
Width be 0.1 to 2.5mm, the length of the main gate line is 100 to 165mm.
4. the front electrode screen structure of solar cell as described in claim 1, which is characterized in that the number of the pair grid line
Amount is 80-200 roots.
5. the front electrode screen structure of solar cell as claimed in claim 1 or 2, which is characterized in that the pair grid line
Width be 10um to 200um, it is described pair grid line length be 10mm to 165mm.
6. the front electrode screen structure of solar cell as described in claim 1, which is characterized in that the disconnected grid knots of the anti-EL
The quantity of structure is arranged for 2-30.
7. the front electrode screen structure of solar cell as described in claim 1, which is characterized in that the first Mark points
Quantity be 4-6, a diameter of 0.2-1.2mm of the 1 Mark points, the quantity of the 2nd Mark points is 4-6, second
A diameter of 0.2-1.2mm of Mark points.
8. the front electrode screen structure of solar cell as described in claim 1, which is characterized in that the solar cell
Shape be quasi- square piece that positive square piece or quadrangle carry circular arc, the wherein diameter of circular arc is more than 150mm.
9. the front electrode screen structure of solar cell as described in claim 1, which is characterized in that the solar cell
Base material be monocrystalline silicon or polysilicon.
10. a kind of preparation method of such as front electrode screen structure of claim 1-9 any one of them solar cells,
It is characterized in that, includes the following steps：
S1:Screen frame is provided, screen cloth is provided in the screen frame；
S2:Several main gate lines and several secondary grid lines are formed in the screen cloth, and form in several main gate lines several the
2 Mark points；Wherein, it is mutually parallel, is mutually parallel between several pair grid lines, and several main gate lines between several main gate lines
It is mutually perpendicular to several secondary grid lines；The positive laser doping of several 2nd Mark points and solar cell it is heavily doped
Several first Mark points that miscellaneous area is formed correspond, and the laser doping of several main gate lines and solar cell is heavily doped
Miscellaneous area corresponds to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810866953.4A CN108766923A (en) | 2018-08-01 | 2018-08-01 | The front electrode screen structure and preparation method of solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810866953.4A CN108766923A (en) | 2018-08-01 | 2018-08-01 | The front electrode screen structure and preparation method of solar cell |
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| CN201810866953.4A Pending CN108766923A (en) | 2018-08-01 | 2018-08-01 | The front electrode screen structure and preparation method of solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111559161A (en) * | 2020-04-07 | 2020-08-21 | 苏州腾晖光伏技术有限公司 | Positive electrode screen printing plate of selective emitter solar cell |
| CN112428714A (en) * | 2020-10-21 | 2021-03-02 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
| CN114914326A (en) * | 2021-02-09 | 2022-08-16 | 环晟光伏(江苏)有限公司 | Laser sintering method for solar cell |
-
2018
- 2018-08-01 CN CN201810866953.4A patent/CN108766923A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111559161A (en) * | 2020-04-07 | 2020-08-21 | 苏州腾晖光伏技术有限公司 | Positive electrode screen printing plate of selective emitter solar cell |
| CN112428714A (en) * | 2020-10-21 | 2021-03-02 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
| CN112428714B (en) * | 2020-10-21 | 2022-09-09 | 浙江爱旭太阳能科技有限公司 | Alignment method of electrode printing system of SE (selective emitter) laminated cell |
| CN114914326A (en) * | 2021-02-09 | 2022-08-16 | 环晟光伏(江苏)有限公司 | Laser sintering method for solar cell |
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Effective date of registration: 20191023 Address after: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Applicant after: Xi'an Electric Power Co., Ltd. Applicant after: Huanghe hydropower Xining Solar Power Co., Ltd Applicant after: State Electricity Investment Group the Yellow River Upstream Hydropower Development Co., Ltd. Applicant after: Qinghai Huanghe Hydropower Development Co. Ltd. Address before: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Applicant before: Xi'an Electric Power Co., Ltd. Applicant before: State power investment group Xi'an Solar Power Co., Ltd. Xining branch Applicant before: State Electricity Investment Group the Yellow River Upstream Hydropower Development Co., Ltd. Applicant before: Qinghai Huanghe Hydropower Development Co. Ltd. |