CN106356414B - A crystalline silicon solar cell and the second printing method of manufacturing a front electrode structure - Google Patents

A crystalline silicon solar cell and the second printing method of manufacturing a front electrode structure Download PDF

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CN106356414B
CN106356414B CN 201610947379 CN201610947379A CN106356414B CN 106356414 B CN106356414 B CN 106356414B CN 201610947379 CN201610947379 CN 201610947379 CN 201610947379 A CN201610947379 A CN 201610947379A CN 106356414 B CN106356414 B CN 106356414B
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solar cell
silicon solar
gate line
crystalline silicon
electrode structure
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CN 201610947379
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CN106356414A (en )
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董鹏
张玉明
郭辉
张春福
张晨旭
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西安电子科技大学
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

本发明公开了一种晶硅太阳电池二次印刷正面电极结构及其制作方法,该电极结构包括第一层网版和第二层网版,其中,该第一层网版包括第一网框,该第一网框内设置第一网布,该第一网布上设置若干根相互平行设置的主栅线,该主栅线上设置第一Mark点,该主栅线与第一网布的钢丝形成第一夹角,该第一夹角为20°至30°;该第二层网版包括第二网框,该第二网框内设置第二网布,该第二网布上设置若干根相互平行设置的副栅线,该副栅线上设置第二Mark点,且所述副栅线之间间隔且垂直设置防EL断栅,该副栅线与第二网布的钢丝形成第二夹角,该第二夹角为90°,该第二Mark点与该第一Mark点位置对应。 The present invention discloses a crystalline silicon solar cell structure and a method of manufacturing a front electrode second printing, the electrode structure comprises a first layer and a second layer of the halftone screen, wherein the first layer comprises a first mesh screen frame the first net first mesh cloth frame is provided, is provided a plurality of main root of gate lines arranged parallel to each other on the cloth of the first wire, the first main gate line disposed Mark point, the main gate line and the first wire cloth the wire forms a first angle, the first angle is 20 ° to 30 °; the second layer comprises a second halftone screen frame, a second frame of the second net mesh, the second mesh provided with a plurality of finger root disposed parallel to each other, the second sub-gate lines disposed Mark point, and the spacing between the sub-gate line and the gate-off EL anti vertically disposed, the sub-gate line and the second wire mesh forming a second angle, the second angle is 90 °, the first point and the second Mark Mark position corresponding point. 该方案可降低晶体硅太阳电池正面栅线遮光面积,提高电池的转换效率。 This scheme can reduce the crystal silicon solar cell light-shielding area of ​​the front gate line, improving the conversion efficiency of the battery.

Description

一种晶硅太阳电池二次印刷正面电极结构及其制作方法 A crystalline silicon solar cell and the second printing method of manufacturing a front electrode structure

技术领域 FIELD

[0001]本发明晶硅太阳电池技术领域,尤其涉及一种晶硅太阳电池二次印刷正面电极结构及其制作方法。 [0001] The present invention is crystalline silicon solar cell technology, and in particular relates to a crystalline silicon solar cell and the second printing a front electrode structure manufacturing method.

背景技术 Background technique

[0002]太阳能光伏产业的迅速发展,需要不断降低生产成本,提高晶硅太阳电池的转换效率,提闻发电量。 [0002] The rapid development of solar photovoltaic industry, need to continuously reduce production costs and improve the conversion efficiency of crystalline silicon solar cells, mention smell generation amount.

[0003]晶体硅太阳电池是将太阳能转化成电能的半导体器件,器件的大小和正面栅线遮光面积直接决定最终的发电功率,为了获得更高的电池转换效率,需要印刷更细的副栅线, 减少遮光面积,提高电流,从而提高晶硅太阳电池转换效率。 [0003] The crystalline silicon solar cells converting solar energy into electrical energy is a semiconductor device, the size of the device and a front light-shielding area of ​​the gate line directly determine the final power generation, in order to obtain higher cell efficiency, the need to print finer sub-gate line reducing the light-shielding area, increase the current, thereby improving the conversion efficiency of crystalline silicon solar cells.

[0004]在晶硅太阳电池的生产中,正面电极的图形根据工艺水平,需要不断的优化改进, 降低遮光面积,提高转换效率,因此,有必要对晶硅太阳电池的正面电极网版进行改进。 [0004] In the production of crystalline silicon solar cells, the front electrode pattern according to the process level, the need to constantly optimized and improved, reducing the shielding area and improve the conversion efficiency, therefore, it is necessary for the crystalline silicon solar cell is improved front electrode halftone .

发明内容 SUMMARY

[0005]本发明提出了一种晶硅太阳电池二次印刷正面电极结构及其制作方法,可降低晶体硅太阳电池正面栅线遮光面积,提高电池的转换效率。 [0005] The present invention provides a crystalline silicon solar cell manufacturing method of positive electrode structure and the second printing, crystalline silicon solar cells can reduce the light-shielding area of ​​the front gate line, improving the conversion efficiency of the battery.

[0006]本发明提供如下技术方案: [0006] The present invention provides the following technical solutions:

[0007] —种晶硅太阳电池二次印刷正面电极结构,设置在晶硅太阳电池的正面,所述电极结构包括第一层网版和第二层网版,其中,所述第一层网版包括第一网框,所述第一网框内设置第一网布,所述第一网布上设置若干根相互平行设置的主栅线,所述主栅线上设置第一Mark点,所述主栅线与所述第一网布的钢丝形成第一夹角,所述第一夹角为20°至30°;所述第二层网版包括第二网框,所述第二网框内设置第二网布,所述第二网布上设置若干根相互平行设置的副栅线,所述副栅线上设置第二Mark点,且所述副栅线之间间隔且垂直设置防EL断栅,所述副栅线与所述第二网布的钢丝形成第二夹角,所述第二夹角为90 °,所述第二M ark点与所述第一M a rk点位置对应。 [0007] - seed crystal silicon solar cell the second printing front electrode structure disposed on the front surface of the crystalline silicon solar cell, the electrode structure comprises a first layer and a second layer of the halftone screen, wherein the first layer of mesh Edition frame includes a first network, the first network first mesh cloth frame is provided, the root bus bar provided with a plurality parallel to each other on the first mesh cloth, the first main gate line disposed Mark point, the main gate line and the first mesh cloth wire forming a first angle, the first angle is 20 ° to 30 °; and the second layer comprises a second halftone screen frame, the second a second mesh screen frame, provided with a plurality of finger root parallel to each other provided on the second distribution network, the second sub-gate line disposed Mark point, and the spacing between the sub-gate line and the vertical anti-EL-off gate is provided, the sub-gate line and the second wire mesh forming a second angle, the second angle is 90 °, the second node and the first M ark M a position corresponding to rk.

[0008]优选的,在上述的晶硅太阳电池二次印刷正面电极结构中,所述第一Mark点数量为4个、6个或8个,直径在0.2至1.2mm。 [0008] Preferably, the above crystalline silicon solar cell in the second printing front electrode structure, the number of points of the first Mark 4, 6 or 8, a diameter of 0.2 to 1.2mm.

[0009]优选的,在上述的晶硅太阳电池二次印刷正面电极结构中,所述主栅线的宽度为0• 1至1 • 5mm,所述主栅线的长度为155至165mm,所述主栅线的数量为3至20条。 [0009] Preferably, the above crystalline silicon solar cell in the second printing front electrode structure, the width of the bus bar is 0 • 1 to 1 • 5mm, the length of the main gate line 155 to 165mm, the the number of said bus bar is 3-20.

[0010] 优选的,在上述的晶硅太阳电池二次印刷正面电极结构中,所述第二Mark点数量为4个、6个或8个,直径在0.2至1.2mm。 [0010] Preferably, the above crystalline silicon solar cell in the second printing front electrode structure, the number of the second Mark points 4, 6 or 8, a diameter of 0.2 to 1.2mm.

[0011] 优选的,在上述的晶硅太阳电池二次印刷正面电极结构中,所述防EL断栅在两根主栅线之间,数量为2至15排。 [0011] Preferably, the above crystalline silicon solar cell in the second printing front electrode structure, the anti-EL-off between the two gate bus bar, in an amount of 2 to 15 rows.

[0012] 优选的,在上述的晶硅太阳电池二次印刷正面电极结构中,所述副栅线的宽度为10至40 um,所述副栅线的长度为155至165mm,所述副栅线的数量为9〇至18〇条。 [0012] Preferably, the above crystalline silicon solar cell in the second printing front electrode structure, the width of the auxiliary gate line is from 10 to 40 um, a length of the sub-gate line 155 to 165mm, the sub-gate to the number of lines is 9〇 strip 18〇.

[0013] 优选的,在上述的晶硅太阳电池二次印刷正面电极结构中,所述第二网布为无网结网布。 [0013] Preferably, the above crystalline silicon solar cell in the second printing front electrode structure, and the second mesh network node is no mesh.

[0014] 优选的,在上述的晶硅太阳电池二次印刷正面电极结构中,所述晶硅太阳电池的形状为正方片或四角带有圆弧的准方片,其中圆弧的直径大于200mm。 [0014] Preferably, the above crystalline silicon solar cell in the second printing front electrode structure, the shape of the crystalline silicon solar cell with a quasi-square piece of arcuate sheet or square corners, wherein the diameter of the arc is greater than 200mm .

[0015] 优选的,在上述的晶硅太阳电池二次印刷正面电极结构中,所述晶硅太阳电池的基材为单晶硅或多晶硅。 [0015] Preferably, the above crystalline silicon solar cell in the second printing front electrode structure, the crystalline silicon solar cell substrate is a monocrystalline or polycrystalline silicon.

[0016] 本发明还公开了一种如上所述的晶硅太阳电池二次印刷正面电极结构的制作方法,包括如下步骤: [0016] The present invention also discloses a crystalline silicon solar cell manufacturing method of the second printing front electrode structure as described above, comprising the steps of:

[0017] 步骤1,所述第一网布的钢丝采用与所述主栅线20°至30°的夹角方向进行排布; [0018] 步骤2,所述第二网布的钢丝采用与所述副栅线90°的夹角方向进行排布; [0017] Step 1, the wire cloth of the first network for use with the arrangement direction of the main gate line angle 20 ° to 30 °; [0018] Step 2, the second wire mesh employed with the sub-gate line direction angle of 90 ° were arranged;

[0019] 步骤3,所述第一层网版与所述第二层网版通过所述第一Mark点与第二Mark点对准。 [0019] Step 3, the first screen layer and said second layer through said first halftone dot Mark Mark aligned with the second point.

[0020] 采用上述方案,由于所述第一层网版只印刷所述主栅线,对所述第一网布透墨能力要求不高,因此可以选择常规的成本较低的网布进行制作,从而降低生产成本;所述第二网布采用无网结网布,从而提高第二网布的透墨能力,这样制作出的网版可以满足更细线的印刷,减少遮光面积,提高电流,从而提高晶硅太阳电池转换效率。 [0020] With the above embodiment, since the first layer is screen printed only the main gate line, the first ink-permeable cloth network capacity less demanding, thus may select a lower-cost conventional mesh was produced , thereby reducing production costs; the second mesh-free mesh network node, thereby increasing the capacity of the second ink-permeable mesh, so that the created screen to meet the more fine line printing, reducing the light shielding area and improve the current , thereby improving the conversion efficiency of crystalline silicon solar cells. 所述第一层网版与所述第二层网版通过所述第一Mark点与第二Mark点对准,可以避免套印产生的偏移现象, 提高晶硅太阳电池制作的合格率。 The first layer and the second layer of the halftone screen Mark through the first point and the second point is aligned Mark avoid overlay offset phenomenon, improvement of the yield of crystalline silicon solar cell production.

附图说明 BRIEF DESCRIPTION

[0021]图1为本发明实施例的二次印刷第一层网版示意图; [0021] Fig 1 a schematic view of a screen printing a first layer of the secondary embodiment of the present invention;

[0022]图2为本发明实施例的二次印刷第一层网版局部放大图; [0022] FIG 2 a first secondary layer printed halftone partial enlarged view of an embodiment of the present invention;

[0023]图3为本发明实施例的二次印刷第二层网版示意图; [0023] FIG. 3 illustrates a second screen printed layer of the second embodiment of the present invention;

[0024]图4为本发明实施例的二次印刷第二层网版局部放大图; [0024] FIG. 4 of the second layer halftone printing partial enlarged view of a secondary embodiment of the present invention;

[0025]图中:100 —第一层网版、101-第一网框、102—第一网布、103 —主栅线、104 —第一Mark点、201—第一夹角、300 —第二层网版、301 —第二网框、302—第二网布、303—副栅线、304—第二Mark点、305—防EL断栅、401—第二夹角 [0025] FIG: 100 - a first screen layer, the first net block 101, the first wire cloth 102- 103 - Main gate lines 104 - a first point Mark, 201- first angle, 300-- The second layer screen, 301-- second screen frame, a second mesh 302, the sub-gate line 303, the second Mark 304- point, the anti-EL-off gate 305, a second angle 401

具体实施方式 detailed description

[0026]以下结合附图和具体实施例对本发明提出的晶硅太阳电池二次印刷正面电极结构及其制作方法作进一步详细说明。 [0026] The following specific examples in conjunction with the accompanying drawings and the detailed description will be further made of the crystalline silicon solar cell of the present invention, the front electrode structure and method of manufacturing the second printing. 根据下面说明和权利要求书,本发明的优点和特征将更清楚。 The following description and the appended claims, features and advantages of the present invention will be apparent. 需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。 It should be noted that the drawings are used in a very simplified form and are using a non-precise proportion, only to facilitate, assist clarity purpose of illustrating an embodiment of the present invention.

[0027]请参阅图1至图4,本实施例公开了一种晶硅太阳电池二次印刷正面电极结构,设置在晶硅太阳电池的正面,所述电极结构包括第一层网版100和第二层网版300,其中,所述第一层网版100包括第一网框101,所述第一网框101内设置第一网布102,所述第一网布102 上设置若干根相互平行设置的主栅线103,所述主栅线103上设置第一Mark点104,所述主栅线103与所述第一网布102的钢丝形成第一夹角201,所述第一夹角201为20°至30°;所述第二层网版300包括第二网框301,所述第二网框301内设置第二网布302,所述第二网布302 上设置若干根相互平行设置的副栅线303,所述副栅线303上设置第二Mark点304,且所述副栅线303之间间隔且垂直设置防EL断栅3〇5,所述副栅线303与所述第二网布302的钢丝形成第二夹角401,所述第二夹角401为90°,所述第二Mark点304与所述第一Mark点104位置对应。 [0027] Please refer to FIG. 1 to FIG. 4, the present embodiment discloses a crystalline silicon solar cell the second printing front electrode structure disposed on the front surface of the crystalline silicon solar cell, the electrode structure comprises a first layer 100 and the halftone the second layer screen 300, wherein the first layer comprises a first mesh screen 100 frame 101, the first network block 101 is provided within the first wire cloth 102 disposed on a plurality of roots of the first wire cloth 102 a main gate line 103 arranged parallel to each other, a first point 104 on the Mark main gate line 103, the gate main line 103 is formed with a first angle 201 of the first mesh wire cloth 102, the first 201 an angle of 20 ° to 30 °; and the second layer 300 includes a second halftone screen frame 301 within the second housing 301 is provided a second network 302 mesh, disposed on said second plurality of mesh 302 root Finger 303 arranged parallel to each other, said sub-gate line 303 disposed on the second Mark point 304, and the sub-gate line 303 and the vertical spacing between the anti-EL-off gate disposed 3〇5, the sub-gate line 303 second angle 401 is formed with the second wire mesh 302, the second angle 401 is 90 °, the second Mark Mark point 304 to the first position corresponding to point 104.

[0028] 在上述实施例中,所述第一Mark点104数量为4个、6个或8个,直径在0.2至1.2mm〇 [0028] In the above embodiment, the number of the first point 104 Mark 4, 6 or 8, the diameter of 0.2 to 1.2mm〇

[0029] 在上述实施例中,所述主栅线103的宽度为0.1至1.5mm,所述主栅线103的长度为155至165mm,所述主栅线103的数量为3至20条。 Width [0029] In the above embodiment, the gate main line 103 is 0.1 to 1.5mm, the length of the bus bar 103 is 155 to 165mm, the number of bus bar 103 is 3-20.

[0030] 在上述实施例中,所述第二Mark点304数量为4个、6个或8个,直径在0.2至1.2mm〇 [0030] In the above embodiment, the number of Mark the second point 304 is 4, 6 or 8, the diameter of 0.2 to 1.2mm〇

[0031] 在上述实施例中,所述防EL断栅305在两根主栅线之间,数量为2至15排。 [0031] In the above embodiments, the anti-EL-off gate 305 between the two bus bars, in an amount of 2 to 15 rows.

[0032] 在上述实施例中,所述副栅线3〇3的宽度为10至40 um,所述副栅线303的长度为155至165mm,所述副栅线303的数量为90至180条。 [0032] In the above embodiment, the width of the auxiliary gate line 3〇3 10 to 40 um, a length of the sub-gate 303 is line 155 to 165mm, the number of sub-gate line 303 is 90 to 180 Article.

[0033] 在上述实施例中,所述第二网布302为无网结网布。 [0033] In the above embodiment, the second mesh is 302 mesh network node no.

[0034] 在上述实施例中,所述晶硅太阳电池的形状为正方片或四角带有圆弧的准方片, 其中圆弧的直径大于200mm。 [0034] In the above embodiment, the shape of the crystalline silicon solar cell is a square with the four corners of a sheet or quasi-square sheet of the arc, wherein the arc is greater than a diameter of 200mm.

[0035] 在上述实施例中,所述晶硅太阳电池的基材为单晶硅或多晶硅。 [0035] In the above embodiment, the crystalline silicon solar cell substrate is a monocrystalline or polycrystalline silicon.

[0036]上述实施例还公开了一种如上所述的晶硅太阳电池二次印刷正面电极结构的制作方法,包括如下步骤: [0036] The disclosed embodiments further secondary crystalline silicon solar cell manufacturing method of printing a front electrode structure as described above, comprising the steps of:

[0037] 步骤1,所述第一网布102的钢丝采用与所述主栅线20°至30°的夹角方向进行排布; [0037] Step 1, the wire cloth 102 of the first network for use with the arrangement direction of the main gate line angle 20 ° to 30 °;

[0038]步骤2,所述第二网布302的钢丝采用与所述副栅线90°的夹角方向进行排布; [0038] Step 2, the second wire mesh 302 arranged for use with sub-gate line direction of the angle of 90 °;

[0039] 步骤3,所述第一层网版100与所述第二层网版3〇0通过所述第一Mark点104与第二Mark点304对准。 [0039] Step 3, the first screen layer 100 and the second layer through the first halftone 3〇0 Mark Mark point 104 aligned with the second point 304.

[0040] 采用上述方案,由于所述第一层网版1〇〇只印刷所述主栅线,对所述第一网布102 透墨能力要求不高,因此可以选择常规的成本较低的网布进行制作,从而降低生产成本;所述第二网布302采用无网结网布,从而提高第二网布的透墨能力,这样制作出的网版可以满足更细线的印刷,减少遮光面积,提高电流,从而提高晶硅太阳电池转换效率。 [0040] With the above embodiment, since the first layer is screen printed only 1〇〇 the main gate line, the first wire cloth 102 ink penetrating capacity less demanding, thus you may select a lower cost conventional mesh was produced, thereby reducing production costs; the second mesh network node 302 mesh-free, thereby increasing the capacity of the second ink-permeable mesh, so that the created screen to meet the more fine line printing, reducing shielding area, increase the current, thereby improving the conversion efficiency of crystalline silicon solar cells. 所述第一层网版100与所述第二层网版300通过所述第一Mark点104与第二Mark点304对准,可以避免套印产生的偏移现象,提高晶硅太阳电池制作的合格率。 The first layer 100 and the second halftone screen layer 300 through the first point 104 and the second Mark Mark point 304 are aligned, the overlay offset phenomenon can be avoided to improve the production of crystalline silicon solar cells Pass rate.

[0041]上述描述仅是对本发明较佳实施例的描述,并非对本发明范围的任何限定,本发明领域的普通技术人员根据上述揭示内容做的任何变更、修饰,均属于权利要求书的保护范围。 [0041] The above description is a description of the preferred embodiments of the present invention, and are not in any limiting the scope of the present invention, the art of the present invention of ordinary skill in the art to make according to the above disclosure of any change, modification, all fall within the scope of the claims .

Claims (9)

  1. 1. 一种晶硅太阳电池二次印刷正面电极结构,设置在晶硅太阳电池的正面,其特征在于,包括第一层网版和第二层网版,其中, 所述第一层网版包括第一网框,所述第一网框内设置第一网布,所述第一网布上设置若千根相互平行设置的主栅线,所述主栅线上设置第一Mark点,所述主栅线与所述第一网布的钢丝形成第一夹角,所述第一夹角为20°至30°; 所述第二层网版包括第二网框,所述第二网框内设置第二网布,所述第二网布上设置若干根相互平行设置的副栅线,所述副栅线上设置第二Mark点,且所述副栅线之间间隔且垂直设置防EL断栅,所述副栅线与所述第二网布的钢丝形成第二夹角,所述第二夹角为90°,所述第二Mark点与所述第一Mark点位置对应;其中,所述副栅线的宽度为10至40um,所述第二网布为无网结网布。 A crystal silicon solar cell the second printing front electrode structure disposed on the front surface of the crystalline silicon solar cell, characterized by comprising a first layer and a second layer of the halftone screen, wherein the first layer halftone frame including first web, said first web first web frame disposed cloth, the cloth is provided on the first network if one thousand bus bars arranged parallel to each other, the first main gate line disposed Mark point, the main gate line and the first mesh cloth wire forming a first angle, the first angle is 20 ° to 30 °; and the second layer comprises a second halftone screen frame, the second a second mesh screen frame, provided with a plurality of finger root parallel to each other provided on the second distribution network, the second sub-gate line disposed Mark point, and the spacing between the sub-gate line and the vertical anti-EL-off gate is provided, the sub-gate line and the second wire mesh forming a second angle, the second angle is 90 °, the first point and the second Mark Mark point position corresponds; wherein the sub-gate line width of 10 to 40um, and the second mesh network node is no mesh.
  2. 2. 如权利要求1所述的晶硅太阳电池二次印刷正面电极结构,其特征在于,所述第一Mark点数量为4个、6个或8个,直径在0.2至1.2mm。 2. The crystalline silicon solar cell 1 according to the second printing front electrode structure as claimed in claim, wherein said first number is a Mark 4, 6 or 8, a diameter of 0.2 to 1.2mm.
  3. 3. 如权利要求1所述的晶硅太阳电池二次印刷正面电极结构,其特征在于,所述主栅线的宽度为0.1至1.5mm,所述主栅线的长度为155至165mm,所述主栅线的数量为3至20条。 3. The crystalline silicon solar cell according to the second front electrode structure as claimed in claim 1 printing, wherein a width of the bus bar is 0.1 to 1.5mm, the length of the main gate line 155 to 165mm, the the number of said bus bar is 3-20.
  4. 4. 如权利要求1所述的晶硅太阳电池二次印刷正面电极结构,其特征在于,所述第二Mark点数量为4个、6个或8个,直径在0.2至1.2mm。 4. The crystalline silicon solar cell of the second printing front electrode structure as claimed in claim 1, wherein the number of the second Mark points 4, 6 or 8, a diameter of 0.2 to 1.2mm.
  5. 5. 如权利要求1所述的晶硅太阳电池二次印刷正面电极结构,其特征在于,所述防EL断栅在两根主栅线之间,数量为2至15排。 5. The crystalline silicon solar cell 1 according to the second printing front electrode structure as claimed in claim, characterized in that the anti-EL-off between the two gate bus bar, in an amount of 2 to 15 rows.
  6. 6. 如权利要求1所述的晶硅太阳电池二次印刷正面电极结构,其特征在于,所述副栅线的长度为155至165mm,所述副栅线的数量为90至180条。 6. The crystalline silicon solar cell 1 according to the second printing front electrode structure as claimed in claim, wherein the length of the sub-gate line 155 to 165mm, the number of sub-gate line is 90 to 180 bar.
  7. 7. 如权利要求1所述的晶硅太阳电池二次印刷正面电极结构,其特征在于,所述晶硅太阳电池的形状为正方片或四角带有圆弧的准方片,其中圆弧的直径大于200mm。 Crystalline silicon solar cell as claimed in claim 1, said second printing front electrode structure, wherein the shape of the crystalline silicon solar cell with a quasi-square piece of arcuate sheet or square corners, wherein the arc diameter greater than 200mm.
  8. 8. 如权利要求1所述的晶硅太阳电池二次印刷正面电极结构,其特征在于,所述晶硅太阳电池的基材为单晶硅或多晶硅。 8. The crystalline silicon solar cell 1 according to the second printing front electrode structure as claimed in claim, wherein the crystalline silicon solar cell substrate is monocrystalline or polycrystalline silicon.
  9. 9. 如权利要求1至8中任意一项的所述晶硅太阳电池二次印刷正面电极结构的制作方法,其特征在于,包含如下步骤: 步骤1,所述第一网布的钢丝采用与所述主栅线20°至30°的夹角方向进行排布; 步骤2,所述第二网布的钢丝采用与所述副栅线90°的夹角方向进行排布; 步骤3,所述第一层网版与所述第二层网版通过所述第一Mark点与第二Mark点对准。 The crystalline silicon solar cell manufacturing method of the second printing front electrode structure as claimed in any of claims 1 to 8 a, characterized in that it comprises the following steps: Step 1, the first network with the use of wire cloth the angle between the direction of the bus bar 20 ° to 30 ° is arranged; step 2, the second wire mesh employed were arranged with an angle to the direction of 90 ° of the sub-gate line; step 3, the said first screen layer and said second layer through said first halftone dot Mark Mark aligned with the second point.
CN 201610947379 2016-10-26 2016-10-26 A crystalline silicon solar cell and the second printing method of manufacturing a front electrode structure CN106356414B (en)

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CN103171253A (en) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 Matching metal solar screen for multi-time printing and use method thereof
CN103171260A (en) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 Matched screen board of solar cell electrode and printing method thereof
CN203381322U (en) * 2013-07-29 2014-01-08 宁晋阳光新能源有限公司 Secondary printing screen for solar cell production
CN104332509A (en) * 2014-11-04 2015-02-04 东莞南玻光伏科技有限公司 Solar cell electrode printing screen, solar cell electrode and manufacturing method thereof
CN204315585U (en) * 2015-01-05 2015-05-06 无锡德鑫太阳能电力有限公司 Solar cell sheet with anti-breaking gate electrode structure
CN105047732A (en) * 2015-07-02 2015-11-11 江西瑞晶太阳能科技有限公司 High-strength anti-broken gate cell manufacturing method and product
CN105599431A (en) * 2016-01-08 2016-05-25 上海艾力克新能源有限公司 Crystalline silicon solar cell secondary printing front face electrode overprinting screen printing plate graph structure

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1606175A (en) * 2003-10-08 2005-04-13 夏普株式会社 Solar cell making method and solar cell made thereby
CN103171253A (en) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 Matching metal solar screen for multi-time printing and use method thereof
CN103171260A (en) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 Matched screen board of solar cell electrode and printing method thereof
CN203381322U (en) * 2013-07-29 2014-01-08 宁晋阳光新能源有限公司 Secondary printing screen for solar cell production
CN104332509A (en) * 2014-11-04 2015-02-04 东莞南玻光伏科技有限公司 Solar cell electrode printing screen, solar cell electrode and manufacturing method thereof
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