CN207891456U - A kind of efficient production equipment for monocrystalline silicon - Google Patents
A kind of efficient production equipment for monocrystalline silicon Download PDFInfo
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- CN207891456U CN207891456U CN201721864623.9U CN201721864623U CN207891456U CN 207891456 U CN207891456 U CN 207891456U CN 201721864623 U CN201721864623 U CN 201721864623U CN 207891456 U CN207891456 U CN 207891456U
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- Prior art keywords
- microwave
- single crystal
- crystal growing
- growing furnace
- graphite
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Abstract
The utility model is related to a kind of efficient production equipments for monocrystalline silicon,The production equipment includes single crystal growing furnace and the heating system for single crystal growing furnace,Single crystal growing furnace is internally provided with the silica crucible for carrying silicon liquid,Heating system includes microwave generating apparatus and microwave transmission mechanism,Microwave transmission mechanism is that the stainless steel pipes in circuit are vacuumized with anti-microwave,The output end of microwave generating apparatus is connected with single crystal growing furnace by stainless steel pipes and carries out microwave conveying,The graphite crucible bar for being used to support silica crucible lifting rotation is provided in the single crystal growing furnace,Graphite crucible is provided with outside silica crucible,Quartzy guide shell is disposed with inside single crystal growing furnace from top to bottom,Graphite insulation barrel with molybdenum matter reflecting plate,Graphite support block with molybdenum matter reflecting plate,Columnar insulation quilt,Quartz thermal insulation barrel,Gas vent and microwave protection net and forming furnace bottom with molybdenum matter reflecting plate；The equipment utilization microwave heating carries out crystal pulling, send temperature fast, production efficiency and yield are significantly increased.
Description
Technical field
The utility model belongs to monocrystalline silicon production technical field, and in particular to a kind of efficient production for monocrystalline silicon is set
It is standby.
Background technology
Monocrystalline manufacturing industry is the industry of a highly energy-consuming, needs electric energy to be converted to thermal energy during producing monocrystalline silicon
The growing environment of monocrystalline silicon is provided, consumption electric energy total amount is larger when monocrystalline produces, and the costliness of the electricity charge and sustainable growth are to lead to list
A high main cause of brilliant manufacturing cost also results in civilian electricity in the way of electric energy fever progress monocrystalline production
Anxiety can all cause no small influence to daily life and other commercial power, and therefore, it is necessary to the existing monocrystalline mode of production
It is improved.
Utility model content
The utility model overcomes the defect of the prior art, provides a kind of efficient production equipment for monocrystalline silicon, should
Equipment can reduce power consumption to greatest extent, provide operating environment for crystal-pulling, and can significantly improve crystal-pulling
Yield.
The specific technical solution of the utility model is：
A kind of efficient production equipment for monocrystalline silicon, the production equipment include single crystal growing furnace and the heating system for single crystal growing furnace
System, single crystal growing furnace are internally provided with the silica crucible for carrying silicon liquid, and key point is that the heating system includes microwave
Device and microwave transmission mechanism, microwave transmission mechanism are that the stainless steel pipes in circuit are vacuumized with anti-microwave, and microwave fills
The output end set is connected with single crystal growing furnace by stainless steel pipes and carries out microwave conveying, is provided with and is used to support in the single crystal growing furnace
The graphite crucible bar of silica crucible lifting rotation.
Graphite crucible is provided with outside the silica crucible, the interior table of graphite crucible is tightly attached in the outer surface of silica crucible
Face, the upper surface of graphite crucible are higher than the upper surface of silica crucible.
Quartzy guide shell, the graphite heat preservation with molybdenum matter reflecting plate are disposed with inside the single crystal growing furnace from top to bottom
Bucket, the graphite support block with molybdenum matter reflecting plate, columnar insulation quilt, quartz thermal insulation barrel, gas vent and microwave protection net with
And the forming furnace bottom with molybdenum matter reflecting plate；Graphite support block is fixed on single crystal growing furnace inner wall and is used to support graphite insulation barrel,
Quartzy guide shell cross section is taper cone barrel wide at the top and narrow at the bottom, and silica crucible is located at the cylindrical inner of insulation quilt formation.
The microwave generating apparatus is microwave generator, the microwave output end of microwave generator by stainless steel pipes with
Single crystal growing furnace is connected, and it is the pipeline that both ends are separately connected stainless steel pipes and single crystal growing furnace, stainless steel pipes that anti-microwave, which vacuumizes circuit,
It is also associated with vaccum-pumping equipment, vaccum-pumping equipment vacuumizes circuit and connect with single crystal growing furnace with stainless steel pipes junction, anti-microwave
Place is both provided with stainless steel gauze screen.
The utility model has the beneficial effects that：The utility model carries out crystal growth environment by microwave heating
It establishes, microwave technology has low energy consumption, heats fast advantage, can greatly reduce the energy consumption of monocrystalline equipment, while microwave can
It avoids the diversity of thermal energy from being lost, increases the thermal gradient in stove, pulling rate can improve to 3-4 times of current velocity Huo existing speed, add
Hot fast, directionality is strong feature can greatly save the time of crystal-pulling, to significantly improve the efficiency and yield of crystal pulling；
Prevent the device of microwave circuit from realizing that the orientation of microwave adds by being equipped in heating system in the production equipment
Heat, improves the directionality of microwave heating, and stable microwave is established between microwave generating apparatus and single crystal growing furnace and is irreversibly delivered
Relationship；
In addition, being leaked after reaching single crystal growing furnace in order to avoid microwave, thermal field is additionally provided in single crystal growing furnace, the thermal field is main
By heat safe graphite product, quartz ware and the molybdenum matter reflecting plate of microwave leakage is prevented to constitute, graphite product includes mainly
Insulation barrel, forming furnace bottom, crucible bar and crucible play the role of heat preservation and support, quartz system while avoiding microwave leakage
Product include quartzy guide shell, silica crucible and quartz thermal insulation barrel, and quartzy guide shell is used for flowing backwards argon gas and preventing microwave from permeating, stone
English crucible is used for holding silicon raw material and ensureing that the pure of raw material, quartz thermal insulation barrel keep the temperature furnace inner environment and prevent microwave leakage,
Molybdenum matter reflecting plate can prevent microwave leakage and reduce power attenuation；The foundation of the thermal field can avoid the leakage of microwave, reduce
Stove power loss improves the utilization rate of microwave, and good environment is provided for the foundation of required thermal energy in single crystal growing furnace, maximum
What limit shortened thermal energy establishes the period.
Description of the drawings
Fig. 1 is the structural schematic diagram of microwave heating system in the utility model.
In attached drawing, 1, quartzy guide shell, 2, graphite heat-preservation cylinder, 3, graphite support block, 4, insulation quilt, 5, quartz thermal insulation barrel,
6, gas vent, 7, forming furnace bottom, 8, graphite crucible bar, 9, graphite crucible, 10, silica crucible, 11, single crystal growing furnace, 12, stainless steel tube
Road, 13, microwave generating apparatus, 14, microwave protection net, 15, power control cabinet, 16, single crystal growing furnace switch board, 17, anti-microwave take out it is true
Backlash road, 18, vaccum-pumping equipment, 19, stainless steel gauze screen.
Specific implementation mode
The utility model is related to a kind of efficient production equipment for monocrystalline silicon, which includes single crystal growing furnace 11 and uses
In the heating system of single crystal growing furnace 11, single crystal growing furnace 11 is internally provided with the silica crucible 10 for carrying silicon liquid, the heating system
System includes microwave generating apparatus 13 and microwave transmission mechanism, and microwave transmission mechanism is to vacuumize the stainless of circuit 17 with anti-microwave
The output end of steel conduit 12, microwave generating apparatus 13 is connected with single crystal growing furnace 11 by stainless steel pipes 12 and carries out microwave conveying,
The graphite crucible bar 8 for being used to support 10 lifting rotation of silica crucible is provided in the single crystal growing furnace 11.
Specific embodiment, as shown in Figure 1, the microwave generating apparatus 13 in heating system selects existing microwave generator,
Microwave generator is generally divided into HIGH-POWERED MICROWAVES generator and low power microwave hair according to cell power with using magnetic control form of tubes
Raw device, being equipped with anti-microwave and vacuumizing the stainless steel pipes 12 in circuit 17 realizes the orientation conveying heating of microwave, and microwave occurs
Microwave launcher tube and the water-cooling system for cooling down body are provided in device, microwave launcher tube is also associated with power control cabinet 15,
Temperature sensor is installed in single crystal growing furnace 11, single crystal growing furnace switch board 16 is provided with outside single crystal growing furnace 11, is mainly used for controlling monocrystalline
The rotation of graphite crucible bar 8 and the control of lift drive mechanism operation, temperature sensor send the signal to power control cabinet in stove
15, power control cabinet 15 controls the watt level of microwave launcher tube in microwave generating apparatus 13, to add in regulating monocrystal stove 11
Hot temperature, the Feedback of Power for foring closed ring type are adjusted, and maintain stable crystal growth required temperature environment；
It is the pipeline that both ends are separately connected stainless steel pipes 12 and single crystal growing furnace 11 that anti-microwave, which vacuumizes circuit 17, and anti-micro-
Wave vacuumizes and is additionally provided with stainless valve in circuit 17, and stainless steel pipes 12 are also associated with vaccum-pumping equipment 18, vacuumize and set
Standby 18 be vacuum pump, and it is equal that vacuum pump with 12 junction of stainless steel pipes, anti-microwave vacuumizes circuit 17 and 11 junction of single crystal growing furnace
It is provided with stainless steel gauze screen 19, the setting of stainless steel gauze screen 19 can prevent vacuum pump from taking microwave away, both avoid personnel
Injury, and can save energy consumption, the type of attachment that anti-microwave vacuumizes circuit 17 and stainless steel pipes 12 are avoided and are separately provided
System caused by vacuumizing circuit is cumbersome so that compact-sized, the later stage monitors microwave leakage work also relative ease.
In order to avoid the microwave from leakage problem of single crystal growing furnace 11, thermal field is added in single crystal growing furnace 11, thermal field is mainly by heat safe
Graphite product, quartz ware and the molybdenum matter reflecting plate of microwave leakage is prevented to constitute, graphite product primarily serves heat preservation and support
Effect, including graphite insulation barrel 2, forming furnace bottom 7, graphite crucible bar 8 and graphite crucible 9, quartz ware includes quartzy guide shell
1, silica crucible 10 and quartz thermal insulation barrel 5；
Graphite crucible bar 8 is arranged in 11 lower vertical of single crystal growing furnace and the upper end is fixed in the middle part of 1 bottom surface of silica crucible, plays
The effect of 10 lifting rotation of silica crucible is supported, graphite crucible 9, the outer surface of silica crucible 10 are provided with outside silica crucible 10
It is tightly attached to the inner surface of graphite crucible 9, the upper surface of graphite crucible 9 is higher than the upper surface of silica crucible 10, and graphite crucible 9 is set
Set the safe handling that can ensure silica crucible 10 in the case where filling with liquid condition.
Quartzy guide shell 1, the graphite insulation barrel with molybdenum matter reflecting plate are disposed with inside single crystal growing furnace 11 from top to bottom
2, the graphite support block 3, columnar insulation quilt 4, quartz thermal insulation barrel 5, gas vent 6 with molybdenum matter reflecting plate and microwave protection net
14 and the forming furnace bottom 7 with molybdenum matter reflecting plate；Graphite support block 3 is fixed on 11 inner wall of single crystal growing furnace and is used to support graphite
Insulation barrel 2,1 cross section of quartzy guide shell are taper cone barrel wide at the top and narrow at the bottom, guide argon gas stream, increase thermal field gradient, improve pulling rate,
Silica crucible 10 is located at the cylindrical inner of the formation of insulation quilt 4, ensures that the thermal field around silica crucible 10 is symmetrical, advantageous Cheng Jing.
Quartzy guide shell 1 can realize the argon gas water conservancy diversion in single crystal growing furnace 11, blocking microwave infiltration, 1 outer circle of quartzy guide shell
Week is fixedly connected with 2 upper end outer circumferential of graphite insulation barrel；2 outside of graphite insulation barrel is added with molybdenum matter reflecting plate, graphite insulation barrel 2
Insulation effect is mainly played, the graphite support block 3 of 2 lower end of graphite insulation barrel plays the role of supporting ＆ stablizing to graphite insulation barrel 2, outside
Portion is also equipped with molybdenum matter reflecting plate, injury, reduction power attenuation caused by molybdenum matter reflecting plate can prevent microwave from leakage；Cylindrical shape
Insulation quilt 4 be located at the periphery of silica crucible 10 and graphite crucible 9, and quartz thermal insulation barrel 5 be then located at 4 lower section of insulation quilt and its outside
Wall is tightly attached on 11 inner wall of single crystal growing furnace, and insulation quilt 4 and quartz thermal insulation barrel 5 keep the temperature furnace inner environment, keep furnace inner environment
Cleanliness factor, quartz thermal insulation barrel 5 can also prevent microwave leakage；Microwave protection net 14 is cylindrical and is fixed on quartz thermal insulation barrel 5
Between forming furnace bottom 7, microwave leakage can be prevented, gas vent 6 is additionally provided on 14 side wall of microwave protection net to ensure exhaust gas
Exclude unimpeded, 7 upper surface of forming furnace bottom has additional molybdenum matter reflecting plate, can protect stainless steel forming furnace bottom 7 and prevent microwave from letting out
Leakage.
The utility model replaces electric energy heating with Microwave Heating, fast using microwave heating, low in energy consumption and directionality spy
Sign can substantially reduce power consumption, and can significantly improve to carrying out being thermally formed crystal pulling required temperature environment in single crystal growing furnace
The efficiency and yield of crystal pulling in single crystal growing furnace, in single crystal growing furnace the foundation of thermal field consolidate and improve the utilization rate of microwave, exist for microwave
Effect performance in single crystal growing furnace provides good hardware environment, and feasibility is very in practice for the production equipment in the utility model
By force, related field can be widely used in.
Claims (4)
1. a kind of efficient production equipment for monocrystalline silicon, which includes single crystal growing furnace (11) and is used for single crystal growing furnace (11)
Heating system, single crystal growing furnace (11) are internally provided with the silica crucible (10) for carrying silicon liquid, it is characterised in that：The heating
System includes microwave generating apparatus (13) and microwave transmission mechanism, and microwave transmission mechanism is to vacuumize circuit (17) with anti-microwave
Stainless steel pipes (12), the output end of microwave generating apparatus (13) is connected simultaneously by stainless steel pipes (12) with single crystal growing furnace (11)
Microwave conveying is carried out, the graphite crucible bar (8) for being used to support silica crucible (10) lifting rotation is provided in the single crystal growing furnace (11).
2. a kind of efficient production equipment for monocrystalline silicon according to claim 1, it is characterised in that：The quartzy earthenware
It is provided with graphite crucible (9) outside crucible (10), the inner surface of graphite crucible (9), stone are tightly attached in the outer surface of silica crucible (10)
The upper surface of black crucible (9) is higher than the upper surface of silica crucible (10).
3. a kind of efficient production equipment for monocrystalline silicon according to claim 1, it is characterised in that：The single crystal growing furnace
(11) internal to be disposed with quartzy guide shell (1) from top to bottom, the graphite insulation barrel (2) with molybdenum matter reflecting plate, carry molybdenum
Graphite support block (3), columnar insulation quilt (4), quartz thermal insulation barrel (5), gas vent (6) and the microwave protection net of matter reflecting plate
(14) and the forming furnace bottom (7) with molybdenum matter reflecting plate；Graphite support block (3) is fixed on single crystal growing furnace (11) inner wall and is used for
It is taper cone barrel wide at the top and narrow at the bottom to support graphite insulation barrel (2), quartzy guide shell (1) cross section, and silica crucible (10) is located at heat preservation
The cylindrical inner that felt (4) is formed.
4. a kind of efficient production equipment for monocrystalline silicon according to claim 1, it is characterised in that：The microwave hair
Generating apparatus (13) is microwave generator, and the microwave output end of microwave generator is by stainless steel pipes (12) and single crystal growing furnace (11) phase
Even, it is the pipeline that both ends are separately connected stainless steel pipes (12) and single crystal growing furnace (11), stainless steel that anti-microwave, which vacuumizes circuit (17),
Pipeline (12) is also associated with vaccum-pumping equipment (18), and vaccum-pumping equipment (18) is taken out with stainless steel pipes (12) junction, anti-microwave
Vacuum loop (17) is both provided with stainless steel gauze screen (19) with single crystal growing furnace (11) junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721864623.9U CN207891456U (en) | 2017-12-27 | 2017-12-27 | A kind of efficient production equipment for monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721864623.9U CN207891456U (en) | 2017-12-27 | 2017-12-27 | A kind of efficient production equipment for monocrystalline silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207891456U true CN207891456U (en) | 2018-09-21 |
Family
ID=63550334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721864623.9U Expired - Fee Related CN207891456U (en) | 2017-12-27 | 2017-12-27 | A kind of efficient production equipment for monocrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207891456U (en) |
-
2017
- 2017-12-27 CN CN201721864623.9U patent/CN207891456U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180921 Termination date: 20181227 |