CN208038591U - A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field - Google Patents
A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field Download PDFInfo
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- CN208038591U CN208038591U CN201820443257.8U CN201820443257U CN208038591U CN 208038591 U CN208038591 U CN 208038591U CN 201820443257 U CN201820443257 U CN 201820443257U CN 208038591 U CN208038591 U CN 208038591U
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- magnetic
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- ampoule bottle
- field
- indium gallium
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Abstract
The utility model provides a kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field, including magnetic field generation mechanisms, vertical-lift mechanism and converter body support mechanism；The magnetic field generation mechanisms are made of iron core, three-phase conduction insulated wire and insulation protection shell；The three-phase conduction insulated wire is connect with power supply；The power supply generates electric current, which generates travelling-magnetic-field in horizontal coil.The utility model in crystal growing furnace by applying a travelling-magnetic-field, when the Lorentz force direction caused by travelling-magnetic-field is downward, the molten matter of antimony indium gallium can accelerate the convection process of molten matter under Lorentz force action transport in crucible, and the cold and hot area distribution in molten bath is more uniform.Meanwhile using the phase displacement signal of three-phase current in square wave current feedback circuit periodically control coil, being conducive to being uniformly distributed for solute, hence it is evident that weaken gross segregation, it is lower to obtain dislocation, the better antimony indium gallium crystal ingot of crystal quality.
Description
Technical field
The utility model is related to antimony indium gallium crystal growth equipment technical fields, and in particular to a kind of antimony with travelling-magnetic-field
Indium gallium crystal growing furnace.
Background technology
Since melt is conductive in crystal growing process, by applying magnetic field, it can inhibit or accelerate inside
Flowing reduces crystal growth striped, improves the quality of crystal to reduce temperature fluctuation.Main operational principle is：With conduction
The melt of property is flowed in ampoule bottle due to the presence of temperature gradient, wherein the speed perpendicular to magnetic direction can cut institute
The magnetic field of application, while generating induced current, and with magnetic field collective effect, generate Lorentz force, the direction of the Lorentz force with
The direction of motion is on the contrary, playing the role of inhibition or accelerating flowing.
Free convection caused by temperature gradient and concentration gradient is easy to make to occur in crystal defect in crystal growing process, such as
Gross segregation and microsegregation are conducive to reduce segregation and refinement solidification by forced convection caused by external force under certain condition
Tissue.Especially special flow field form (being flowed as caused by electromagnetic force) can control temperature field and solute field, it might even be possible to
Complete inhibition segregation, so the convection current in control melt is critically important to control solidified structure.Wherein horizontal travelling-magnetic-field production
Raw Lorentz force makes conductive melt produce the flowing of azimuth direction and the flowing of secondary meridian direction, and traveling wave magnetic
The Lorentz force generated directly makes conductive melt produce the flowing of symmetrical meridian direction, and this flowing is more advantageous to control
The distribution of temperature and solute in conductive melt processed.The stability of melt flows, solute Distribution and growth in crystal growing process
Interface topography is in close relations with solidified structure, and meridian stream caused by travelling-magnetic-field is conducive to improve freezing interface forward position melt
The stability of flowing, the smooth of growth interface and it is solute be uniformly distributed, can also promote freezing interface forward position melt flows by
Stablize to unstable transformation, and influences concave-convex variation and the solute segregation of growth interface.In addition, the premise item of research travelling-magnetic-field
Part is design magnetic field generation device, and the design of the generator is a big difficulty.Therefore, dress is generated by designing travelling-magnetic-field
It sets, effectively controls the distribution of solute in antimony indium gallium crystal growing process, be very necessary and significant technique direction.
Utility model content
Demand for the above-mentioned prior art, the utility model provide a kind of antimony indium gallium crystal growth with travelling-magnetic-field
Stove can effectively reduce the stability of antimony indium gallium crystal median surface forward position melt flows, the planarization and solute of growth interface
Be uniformly distributed, the concaveconvex shape and solute segregation of growth interface.
To realize above-mentioned purpose of utility model, the utility model adopts the following technical solution：
A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field, it is characterised in that：Including magnetic field generation mechanisms, vertically carry
Rise mechanism and converter body support mechanism.The magnetic field generation mechanisms are made of iron core, three-phase conduction insulated wire and insulation protection shell, and three
Mutually conductive insulated wire is stacked in the form of UVW is wrapped on iron core, is a circle insulation protection shell outside iron core；The three-phase is conductive
Insulated wire is connect with three phase low frequency alternating source；The electric current that the three phase low frequency alternating source generates is exciting current, the electric current
Travelling-magnetic-field is generated in horizontal coil；The converter body support mechanism and vertical-lift mechanism are connected with each other by chassis.
Further, the vertical-lift mechanism is made of vertical lift bar, ampoule bottle supporting rack and ampoule bottle, is vertically carried
It is vertical lift bar, ampoule bottle supporting rack and ampoule bottle successively to rise mechanism from top to bottom；The vertical lift bar and ampoule bottle branch
Support is connected by threading snaps；The ampoule bottle supporting rack is moved up and down by being vertically moved up or down bar, while can be in level side
To counterclockwise or rotate clockwise；Groove is equipped in the support mouth of the ampoule bottle supporting rack；Positioning is arranged at the ampoule bottle bottom
Pin, for the ampoule bottle supporting rack that is connected；The support mouth size of the ampoule bottle supporting rack can be replaced with the size of ampoule bottle and be adjusted
Section.
Further, the converter body support mechanism includes furnace body support, inboard wall of burner hearth, coil support frame, heater, heat preservation
Asbestos and shell, converter body support mechanism are furnace body support, shell, heat preservation asbestos, heater, coil support frame successively from outside to inside
And inboard wall of burner hearth；The material of the furnace body support, shell and coil support frame is stainless steel；The material of the inboard wall of burner hearth is resistance to
High-temperature ceramic materials；The heater is made of three groups of horizontal circular shape heaters.
Further, the magnetic field generation mechanisms are made of 6 circle coils, adjustable every according to the size of crystal growing furnace
The spacing of circle coil.
The utility model has the advantages that：The present invention is handed over by applying a three phase low frequency in crystal growing furnace
The travelling-magnetic-field that variable power source generates, the traveling-wave magnetic field generator use star-like connection, and current strength, frequency and phase shift can be just
Profit is adjusted.When the Lorentz force direction caused by travelling-magnetic-field is downward, the antimony indium gallium liquid in crucible is in Lorentz force action transport
The lower stirring action that can reinforce molten bath, the cold and hot area distribution in molten bath is more uniform, is conducive to discharge and the solute of latent heat
Transmission and interface bending degree reduce.Meanwhile using three-phase current in square wave current feedback circuit periodically control coil
Phase displacement signal makes the direction also cyclically-varying therewith in the Lorentz field of force.Occurs the phase of a cycle in conductive melt
There is periodic opposite flowing in the anti-Lorentz field of force in melt, this flowing is conducive to being uniformly distributed for solute,
Apparent to weaken gross segregation, it is lower to obtain dislocation, the better antimony indium gallium ingot of crystal quality.
Description of the drawings
By the way that embodiment is described in conjunction with following accompanying drawings, the features described above and technological merit of the utility model will
It becomes more fully apparent and is readily appreciated that.
Fig. 1 is the structural schematic diagram of the utility model crystal growing furnace.
Fig. 2 is the schematic diagram of magnetic field generation mechanisms.
Fig. 3 is the utility model furnace body coil and coil brace schematic diagram vertical view.
Fig. 4 is the utility model crystal growing furnace vertical-lift mechanism schematic diagram.
Fig. 5 is the utility model crystal growing furnace converter body support structural scheme of mechanism.
Figure label：1, furnace body support；2, it is vertically moved up or down bar；3, ampoule bottle supporting rack；4, ampoule bottle；5, inboard wall of burner hearth；
6, iron core；7, three phase isolated conducting wire；8, insulation protection shell；9, coil support frame；10, heater；11, asbestos are kept the temperature；12, outer
Shell.
Specific implementation mode
The present embodiment is described in detail with reference to Fig. 1-5, Fig. 1 is the structural representation of the utility model crystal growing furnace
Figure, Fig. 2 is the schematic diagram of magnetic field generation mechanisms, and Fig. 3 is the utility model furnace body coil and coil brace vertical view, and Fig. 4 is
The utility model crystal growing furnace vertical-lift mechanism schematic diagram, Fig. 5 are the utility model crystal growing furnace converter body support mechanisms
Schematic diagram.
The utility model includes magnetic field generation mechanisms, vertical-lift mechanism and converter body support mechanism.Magnetic field generation mechanisms packet
Include iron core 6, three-phase conduction insulated wire 7 and insulation protection shell 8.Iron core 6 is equipped with several groups three phase isolated conducting wire 7, three phase isolated
Conducting wire 7 is stacked in the form of UVW be wrapped on iron core 6 in order；It is one layer of insulation protection shell 8, line outside three phase isolated conducting wire 7
It is as shown in Figure 2 to enclose canoe.Three-phase conduction insulated wire is connect with three phase low frequency alternating source, and power supply generates exciting current, should
Electric current generates travelling-magnetic-field in horizontal coil.Magnetic field generation mechanisms use star-like connection, wherein current strength, frequency and phase
Shifting can facilitate adjusting.
After three phase isolated conducting wire 7 is powered, the phase of three-phase current in square wave current feedback circuit periodically control coil is used
Displacement signal makes the direction also cyclically-varying therewith in the Lorentz field of force.Also it will appear the phase of a cycle in conductive melt
There is periodically opposite flowing in the anti-Lorentz field of force that is, in melt, this flowing is conducive to being uniformly distributed for solute, bright
Aobvious to weaken gross segregation, it is lower to obtain dislocation, the better antimony indium gallium ingot of crystal quality.
Fig. 3 is the utility model furnace body coil and coil brace schematic diagram vertical view.It is by insulation protection shell 8 in furnace body
The travelling-magnetic-field generating means of 6 circle coils vertical arrangement and 4 groups of coil support framves 9 are constituted；The present embodiment is actually answered to coordinate
With the layout inside furnace chamber in the process, the shape of iron core 6, single-turn circular coil and insulation protection shell 8 is designed as in the horizontal direction
It is round, in order to be matched with the furnace chamber of crystal growth and crucible, ensure solute in radial uniformity.
Vertical-lift mechanism includes vertical lift bar 2, ampoule bottle supporting rack 3 and ampoule bottle 4.In the growth of antimony indium gallium crystal
In the process, vertical lift bar between ampoule bottle supporting rack with threading snaps by being connect.Ampoule bottle supporting rack is by vertically rising
Drop bar moves up and down, while can counterclockwise or rotate clockwise in the horizontal direction.Ampoule bottle, which supports, is equipped with groove in frame torr mouth,
Positioning pin is arranged at ampoule bottle bottom, for the ampoule bottle supporting rack that is connected.When crystal growth, by adjust ampoule bottle rotating speed and
The rate that supporting rack is raised and lowered can more preferably achieve the purpose that convection current, reduce the generation of the uneven of ingredient and segregation.
Converter body support mechanism includes furnace body support 1, inboard wall of burner hearth 5, coil support frame 9, heater 10,11 and of heat preservation asbestos
Shell 12 is constituted.Coil support frame 9, heater 10 and heat preservation asbestos 11 are between inboard wall of burner hearth 5 and shell 12；Heater 10
It is made of three groups of horizontal circular shape heaters, when heating forms controllable high-precision furnace temperature gradient, to realize control crystal
The distribution of solute in concentration, that is, crystal of interior molten matter.
The utility model suitable for, monocrystalline, quasi- monocrystalline, polycrystalline etc. it is a variety of from antimony indium gallium, cadmium-zinc-teiluride, gallium antimonide melt it is raw
The type of furnace of long crystal.
The above is only the preferred embodiment of the utility model, it should be pointed out that for the ordinary skill of the art
For personnel, without departing from the principle of this utility model, several improvements and modifications can also be made, these are improved and profit
Decorations also should be regarded as the scope of protection of the utility model.
Claims (4)
1. a kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field, it is characterised in that：Including magnetic field generation mechanisms, vertical-lift
Mechanism and converter body support mechanism, the magnetic field generation mechanisms are made of iron core, three-phase conduction insulated wire and insulation protection shell, three-phase
Conductive insulated wire is stacked in the form of UVW and is wrapped on iron core, is a circle insulation protection shell outside iron core；The three-phase is conductive absolutely
Edge line is connect with three phase low frequency alternating source；The electric current that the three phase low frequency alternating source generates is exciting current, which exists
Travelling-magnetic-field is generated in horizontal coil；The converter body support mechanism and vertical-lift mechanism are connected with each other by chassis.
2. a kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field according to claim 1, it is characterised in that：It is described to hang down
Straight hoisting mechanism is made of vertical lift bar, ampoule bottle supporting rack and ampoule bottle, and vertical-lift mechanism is vertical successively from top to bottom
Straight elevating lever, ampoule bottle supporting rack and ampoule bottle；The vertical lift bar is connect with ampoule bottle supporting rack by threading snaps；Institute
It states ampoule bottle supporting rack and is moved up and down by being vertically moved up or down bar, while can counterclockwise or rotate clockwise in the horizontal direction；Institute
It states and is equipped with groove in the support mouth of ampoule bottle supporting rack；Positioning pin is arranged at the bottom of the ampoule bottle, for the ampoule bottle branch that is connected
Support；The support mouth size of the ampoule bottle supporting rack can be replaced with the size of ampoule bottle and be adjusted.
3. a kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field according to claim 1, it is characterised in that：The stove
Body supporting mechanism includes furnace body support, inboard wall of burner hearth, coil support frame, heater, heat preservation asbestos and shell, converter body support mechanism
It is furnace body support, shell, heat preservation asbestos, heater, coil support frame and inboard wall of burner hearth successively from outside to inside；The furnace body branch
The material of frame, shell and coil support frame is stainless steel；The material of the inboard wall of burner hearth is high temperature ceramic material；The heating
Device is made of three groups of horizontal circular shape heaters.
4. a kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field according to claim 1, it is characterised in that：Described
Magnetic field generation mechanisms are made of 6 circle coils, according to the adjustable spacing per circle coil of the size of crystal growing furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820443257.8U CN208038591U (en) | 2018-03-30 | 2018-03-30 | A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820443257.8U CN208038591U (en) | 2018-03-30 | 2018-03-30 | A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field |
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| CN208038591U true CN208038591U (en) | 2018-11-02 |
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| CN201820443257.8U Expired - Fee Related CN208038591U (en) | 2018-03-30 | 2018-03-30 | A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108193279A (en) * | 2018-03-30 | 2018-06-22 | 天津工业大学 | A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field |
| CN111647947A (en) * | 2020-07-09 | 2020-09-11 | 中仁思源实业发展有限公司 | Synthesis device and method of gallium antimonide polycrystalline raw material |
| CN112195519A (en) * | 2020-10-10 | 2021-01-08 | 西安交通大学 | Traveling wave magnetic field control method suitable for crystal growth process |
| CN112746310A (en) * | 2020-12-29 | 2021-05-04 | 西安交通大学 | Heater generated magnetic field control method suitable for conductive melt flow |
-
2018
- 2018-03-30 CN CN201820443257.8U patent/CN208038591U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108193279A (en) * | 2018-03-30 | 2018-06-22 | 天津工业大学 | A kind of antimony indium gallium crystal growing furnace with travelling-magnetic-field |
| CN111647947A (en) * | 2020-07-09 | 2020-09-11 | 中仁思源实业发展有限公司 | Synthesis device and method of gallium antimonide polycrystalline raw material |
| CN112195519A (en) * | 2020-10-10 | 2021-01-08 | 西安交通大学 | Traveling wave magnetic field control method suitable for crystal growth process |
| CN112746310A (en) * | 2020-12-29 | 2021-05-04 | 西安交通大学 | Heater generated magnetic field control method suitable for conductive melt flow |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181102 Termination date: 20190330 |
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| CF01 | Termination of patent right due to non-payment of annual fee |