CN207690791U - 一种mos场效应管的封装框架 - Google Patents

一种mos场效应管的封装框架 Download PDF

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CN207690791U
CN207690791U CN201721878396.5U CN201721878396U CN207690791U CN 207690791 U CN207690791 U CN 207690791U CN 201721878396 U CN201721878396 U CN 201721878396U CN 207690791 U CN207690791 U CN 207690791U
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宁波
刘义芳
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HUAYI MICROELECTRONICS Co.,Ltd.
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Xi'an Hua Yi Electronic Ltd By Share Ltd
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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Abstract

本实用新型公开了一种MOS场效应管的封装框架，其包括D极焊接载体、S极打线基岛、G极打线基岛、G极引脚、S极引脚；所述D极焊接载体的下方一侧设置G极打线基岛，另一侧设置S极打线基岛，所述D极焊接载体上设置有晶圆，所述晶圆通过至少两组铝带引线与S极打线基岛连接以及通过引线与G极打线基岛连接；所述G极引脚的一端设置在G极打线基岛上，所述S极打线基岛上依次引出六组S极引脚。本实用新型将原有分开的两个打线基岛连接一起，后续铝带打线时，可实现根据需求选择合适宽度的铝带或者铝线，不再受分到两个打线基岛的限制。

Description

一种MOS场效应管的封装框架
技术领域
本实用新型属于半导体封装技术领域，具体涉及一种MOS场效应管的封装框架。
背景技术
在对大功率mosfet器件的封装工艺研究中，关心的参数有：产品封装内阻Rdson，产品封装限制电流。
随着大功率应用领域对mosfet的要求：内阻越来越低，电流越来越大，对封装引入的封装内阻及封装限制电流的要求也越来越高。
原有的TO-263-7L封装产品在电动叉车、汽车应急启动电源、动力锂电池、电动工具等应用领域应用广泛，主要是考虑到TO-263-7L封装的低封装内阻及过大流能力。
原有的TO-263-7L封装框架，晶圆的引线分到两个基岛上，由于两个打线基岛的分离，晶圆到引脚的打线必须分到两个基岛实现，总的打线面积较小，限制产品打线总根数，无法更大程度通过增加打线根数总来降低封装内阻；较大的封装内阻，限制了产品的封装电流，在大流使用中，产品发热高，会导在应用中系统整体效率降低；同时两个基岛大小不同，在铝带打线时，若按最小基岛设计使用铝带宽度，同样会导致产品封装内阻较大，限制产品的封装电流，若两个基岛使用不同铝带，这样严重影响晶圆打线的效率。
实用新型内容
有鉴于此，本实用新型的主要目的在于提供一种MOS场效应管的封装框架。
为达到上述目的，本实用新型的技术方案是这样实现的：
本实用新型实施例提供一种MOS场效应管的封装框架，其包括D极焊接载体、S极打线基岛、G极打线基岛、G极引脚、S极引脚；所述D极焊接载体的下方一侧设置G极打线基岛，另一侧设置S极打线基岛，所述D极焊接载体上设置有晶圆，所述晶圆通过至少两组铝带引线与S极打线基岛连接以及通过引线与G极打线基岛连接；所述G极引脚的一端设置在G极打线基岛上，所述S极打线基岛上依次引出六组S极引脚。
上述方案中，所述S极打线基岛为一连续并且加长型S极打线基岛。
上述方案中，所述S极打线基岛、G极打线基岛之间设置有间隙。
本实用新型实施例还提供一种MOS场效应管的封装框架，其包括D极焊接载体、S极打线基岛、G极打线基岛、G极引脚、S极引脚；所述D极焊接载体的下方一侧设置G极打线基岛，另一侧设置S极打线基岛，所述D极焊接载体上设置有晶圆，所述晶圆通过至少六组铝线引线与S极打线基岛连接以及通过引线与G极打线基岛连接；所述G极引脚的一端设置在G极打线基岛上，所述S极打线基岛上依次引出六组S极引脚。
上述方案中，所述S极打线基岛为一连续并且加长型S极打线基岛。
上述方案中，所述S极打线基岛、G极打线基岛之间设置有间隙。
与现有技术相比，本实用新型的有益效果：
本实用新型将原有分开的两个打线基岛连接一起，后续铝带打线时，可实现根据需求选择合适宽度的铝带或者铝线，不再受分到两个打线基岛的限制。
附图说明
图1是本实用新型实施例提供一种MOS场效应管的封装框架的结构示意图；
图2是本实用新型实施例1提供一种MOS场效应管的封装框架的铝线打线示意图；
图3是本实用新型实施例2提供一种MOS场效应管的封装框架的铝带打线示意图；
图4本实用新型实施例提供一种MOS场效应管的封装框架的封装成品的脚位分布示意图。
具体实施方式
为了使本实用新型的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本实用新型进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本实用新型，并不用于限定本实用新型。
本实用新型实施例提供一种MOS场效应管的封装框架，如图1所示，其包括D极焊接载体1、S极打线基岛2、G极打线基岛3、G极引脚4、S极引脚5、6、7、8、9、10；所述D极焊接载体1的下方一侧设置G极打线基岛3，另一侧设置S极打线基岛2，所述D极焊接载体1上设置有晶圆11，所述晶圆11通过至少两组铝带引线12或者至少六组铝线引线12与S极打线基岛2连接以及通过引线与G极打线基岛3连接；所述G极引脚4的一端设置在G极打线基岛3上，所述S极打线基岛2上依次引出六组S极引脚5、6、7、8、9、10。
所述S极打线基岛2为一连续并且加长型S极打线基岛2。
所述S极打线基岛2、G极打线基岛3之间设置有间隙。
本实用新型不止适用于型号为TO-263-7L的MOS场效应管，本实用新型将原有分开的两个打线基岛连接一起，后续铝带打线时，可实现根据需求选择合适宽度的铝带，不再受分到两个打线基岛的限制。
如图4所示，本实用新型增加了S极打线基岛2的引脚个数，使用产品引线电感更小，小的引线电感，在产品开关断时，反冲电压更小，减小产品雪崩击穿的风险。
实施例1
本实用新型实施例1提供一种MOS场效应管的封装框架，如图1、2所示，其包括D极焊接载体1、S极打线基岛2、G极打线基岛3、G极引脚4、S极引脚5、6、7、8、9、10；所述D极焊接载体1的下方一侧设置G极打线基岛3，另一侧设置S极打线基岛2，所述D极焊接载体1上设置有晶圆11，所述晶圆11通过至少六组铝线引线12与S极打线基岛2连接以及通过引线与G极打线基岛3连接；所述G极引脚4的一端设置在G极打线基岛3上，所述S极打线基岛2上依次引出六组S极引脚5、6、7、8、9、10。
所述S极打线基岛2为一连续并且加长型S极打线基岛2。
所述S极打线基岛2、G极打线基岛3之间设置有间隙。
具体地，所述铝线引线12采用六组，但是每组铝带引线12的宽度较窄，这样，通过增加打线根数减小产品封装内阻，增大封装过流能力。
所述铝线引线12的直径根据晶圆11大小选择20mil或者15mil。
连续并且加长型S极打线基岛2可实现更多根的打线，打线根数受基岛2的限制小。
实施例2
本实用新型实施例2提供一种MOS场效应管的封装框架，如图1、3所示，其包括D极焊接载体1、S极打线基岛2、G极打线基岛3、G极引脚4、S极引脚5、6、7、8、9、10；所述D极焊接载体1的下方一侧设置G极打线基岛3，另一侧设置S极打线基岛2，所述D极焊接载体1上设置有晶圆11，所述晶圆11通过至少两组铝带引线13与S极打线基岛2连接以及通过引线与G极打线基岛3连接；所述G极引脚4的一端设置在G极打线基岛3上，所述S极打线基岛2上依次引出六组S极引脚5、6、7、8、9、10。
所述S极打线基岛2为一连续并且加长型S极打线基岛2。
所述S极打线基岛2、G极打线基岛3之间设置有间隙。
具体地，所述铝带引线13采用两组，但是每组铝带引线12的宽度较宽，这样，通过增大铝带引线13的宽度减小产品封装内阻，增大封装过流能力。
所述铝带引线13的线宽根据晶圆11大小选择80mil*10mil铝带。
连续并且加长型S极打线基岛2可实铝带的自由选择，不受现有技术中两个单独基岛的最大打40mil*6mil限制。
一连续并且加长型S极打线基岛2较之前的长度增加了28％左右，主要是表达长度增加且连续后，铝线打线宽度可增加，铝带打线根数可增。
对于实施例1、2来说，均增加了1条S极引脚7，减小引线电感，同时从结构上增大了产品D极与S极之间的框架间距，增大了封装框架抗高压能力。
以上所述，仅为本实用新型的较佳实施例而已，并非用于限定本实用新型的保护范围。

Claims (6)

1.一种MOS场效应管的封装框架，其特征在于，其包括D极焊接载体、S极打线基岛、G极打线基岛、G极引脚、S极引脚；所述D极焊接载体的下方一侧设置G极打线基岛，另一侧设置S极打线基岛，所述D极焊接载体上设置有晶圆，所述晶圆通过至少两组铝带引线与S极打线基岛连接以及通过引线与G极打线基岛连接；所述G极引脚的一端设置在G极打线基岛上，所述S极打线基岛上依次引出六组S极引脚。
2.根据权利要求1所述的一种MOS场效应管的封装框架，其特征在于，所述S极打线基岛为一连续并且加长型S极打线基岛。
3.根据权利要求1或2所述的一种MOS场效应管的封装框架，其特征在于，所述S极打线基岛、G极打线基岛之间设置有间隙。
4.一种MOS场效应管的封装框架，其特征在于，其包括D极焊接载体、S极打线基岛、G极打线基岛、G极引脚、S极引脚；所述D极焊接载体的下方一侧设置G极打线基岛，另一侧设置S极打线基岛，所述D极焊接载体上设置有晶圆，所述晶圆通过至少六组铝线引线与S极打线基岛连接以及通过引线与G极打线基岛连接；所述G极引脚的一端设置在G极打线基岛上，所述S极打线基岛上依次引出六组S极引脚。
5.根据权利要求4所述的一种MOS场效应管的封装框架，其特征在于，所述S极打线基岛为一连续并且加长型S极打线基岛。
6.根据权利要求4或5所述的一种MOS场效应管的封装框架，其特征在于，所述S极打线基岛、G极打线基岛之间设置有间隙。
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