CN207320126U - A kind of high-efficiency three-joint cascade gallium arsenide solar cell with new Window layer - Google Patents
A kind of high-efficiency three-joint cascade gallium arsenide solar cell with new Window layer Download PDFInfo
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Abstract
The utility model discloses a kind of high-efficiency three-joint with new Window layer to cascade gallium arsenide solar cell, including p-type contact layer, bottom battery, the first tunnel junctions, middle battery, the second tunnel junctions, top battery and Window layer.The utility model uses Window layer of the ITO materials with roughening structure as gallium arsenide solar cell top battery.Since the energy gap of ITO is more than AlInP, absorption of the Window layer to incident sunlight can be reduced；ITO materials are roughened at the same time, the incidence of sunlight can be effectively improved, and since ITO has good electric conductivity, traditional conductive grid line can be removed, the Problem of Shading that metal grid lines are brought is avoided, improves the current density of top battery, improves the transfer efficiency of whole solar cell.To sum up, by using Window layer of the ITO materials with roughening structure as gallium arsenide solar cell top battery, the incidence of sunlight can be strengthened, reduce blocking for solar battery surface, and then obtain efficient solar cell.
Description
Technical field
The utility model belongs to high performance solar batteries technical field, and in particular to a kind of efficient with new Window layer
Three knots cascade gallium arsenide solar cell, and the utility model further relates to the manufacture method of the solar cell.
Background technology
With the continuous development of science and technology, the mankind are increasing to the demand of the energy, meanwhile, global energy crisis getting worse
Worsening with ecological environment, clean the efficiently using for solar energy of green becomes more important.Compared to traditional Si too
Positive electricity pond, GaAs solar cells have high conversion efficiency, and performance is stablized, and the advantage such as service life length, is widely used in space and flies
The main power source of row device and terrestrial power generation station.At present, for the GaAs solar cells of Ge Growns, its solar energy transfer efficiency
30% is had reached, its very close theoretical conversion efficiencies limit.GaAs solar cell transfer efficiencies are difficult to continue its improved
In one the reason is that the current limit of battery.The Window layer of conventional GaAs solar cells top battery uses AlInP materials, the material
Window layer is primarily present two shortcomings, and first, the energy gap of AlInP materials only has 2.27eV, can absorb a part of sunlight,
Cause the waste of incident sunlight；Secondly, the doping concentration of AlInP is not high enough, generally requires growth GaAs contact layers, Ran Houzheng
Metal grid lines are plated, which easily removes unclean, absorption portions incident sunlight, and metal gate in GaAs removal process
Line can also block a part of sunlight, cause the waste of sunlight.For this reason, it is necessary to a kind of new window layer material is designed,
For overcoming disadvantages mentioned above.
Utility model content
The purpose of the utility model is to overcome the deficiencies in the prior art, there is provided one kind is rational in infrastructure, technique is simple, performance
Reliably, the low a kind of high-efficiency three-joint cascade gallium arsenide solar cell of production cost.
The utility model solves above-mentioned technical problem by the following technical programs,
A kind of high-efficiency three-joint cascade gallium arsenide solar cell with new Window layer, it is characterised in that contacted including p-type
Layer, bottom battery, the first tunnel junctions, middle battery, the second tunnel junctions, top battery and Window layer；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
Connected between the bottom battery and middle battery by the first tunnel junctions；
Connected between the middle battery and the top battery by the second tunnel junctions；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；
The upper strata of the top battery is additionally provided with Window layer, and the Window layer is the ITO Window layers using ITO materials, is passed through
The mode of magnetron sputtering or electron beam evaporation is in the generation of top battery upper strata.
As an optimization, the bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top；
Pass through PH in p-type contact layer surface3N-Ge launch sites and GaInP nucleating layers are diffuseed to form, P-Ge bases are p-type contact layer
With the transition region of N-Ge launch sites, base of the P-Ge bases as bottom battery；0.1~0.3 μm of N-Ge launch sites thickness, institute
State GaInP 0.03~0.10 μm of layer thickness of nucleation；The bottom battery energy gap is 0.67eV；
As an optimization, first tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs layer thickness is equal
At 0.01~0.04 μm, N++The dopant of GaAs combines for Te, Se, Si one or more therein, doping concentration 3 × 1018
~1 × 1019/cm3；P++The dopant of GaAs combines for Mg, Zn, C one or more therein, and doping concentration requirement 2 ×
1019~5 × 1019/cm3；
As an optimization, InGaAs cushions, the InGaAs cushions are equipped between first tunnel junctions and bottom battery
Thickness is 0.5~1.5 μm；
As an optimization, DBR (distributed Bragg reflector) is equipped between first tunnel junctions and middle battery, it is described
DBR is by 15~30 pairs of AlGaAs/InGaAs structure compositions, AlGaAs layers and InGaAs layers in each pair AlGaAs/InGaAs structures
Thickness all in accordance with λ/4n calculate, wherein 850nm≤λ≤920nm, n be corresponding A lGaAs or InGaAs material refractive index；
Al molar constituents are 50%~70% in AlGaAs；The molar constituent of In is 1% in InGaAs；
As an optimization, the middle battery includes AlGaAs back ofs the body electric field, InGaAs bases, InGaAs transmittings successively from the bottom to top
Area, AlInP or GaInP Window layers, the middle battery energy gap are 1.4eV, wherein, AlGaAs back of the body electric fields thickness 0.05~
0.1 μm, 1.5~2.5 μm of InGaAs bases thickness, 0.1~0.2 μm of InGaAs launch sites thickness, AlInP or GaInP Window layers
Thickness is 0.05~0.15 μm；
As an optimization, second tunnelling becomes N++GaInP/P++AlGaAs, wherein, N++GaInP layers and P++AlGaAs layers
Thickness be 0.01~0.04 μm, N++The dopant of GaInP is Te, Se, Si one or more kinds of combinations therein, and doping is dense
Degree 3 × 1018~1 × 1019/cm3；The dopant of P++AlGaAs is Mg, Zn, C one or more kinds of combinations therein, and doping is dense
Degree requires 2 × 1019~5 × 1019/cm3；
As an optimization, the top battery includes AlGaInP back ofs the body electric field, GaInP bases and GaInP transmittings successively from the bottom to top
Area, the top battery energy gap is 1.8~1.9eV, wherein, AlGaInP back ofs the body electric field, GaInP bases and GaInP launch sites
Gross thickness is 0.5~1 μm；
As an optimization, the ITO Window layers are the ITO with roughening structure, and the thickness of ITO is 0.05~0.15 μm, slightly
Change liquid and use concentrated sulfuric acid solution, 60~80 DEG C of corrosion temperature, 6~12min of etching time；This layer of ITO structure both has Window layer
Effect, while there is grid line, reduce chip cost, improve the incident area of sunlight.
The utility model further includes the making side of the high-efficiency three-joint cascade gallium arsenide solar cell with new Window layer
Method, its step be,
(1) bottom battery is prepared：On p-type contact layer, pass through PH3The substrate surface that is diffused in form N-Ge launch sites, P-
Ge bases are the transition region of p-type contact layer and N-Ge launch sites, base of the P-Ge bases as bottom battery, the N-Ge launch sites
0.1~0.3 μm of thickness；Regrowth GaInP nucleating layers afterwards, thickness are 0.03~0.10 μm；The bottom battery energy gap is
0.67eV；The p-type contact layer is p-type Ge substrates；
(2) the first tunnel junctions are prepared：First tunnelling becomes N++GaAs/P++GaAs, first grows N++GaAs, regrowth P++
GaAs, wherein, N++GaAs layers and P++GaAs layer thickness is at 0.01~0.04 μm, N++The dopant of GaAs for Te, Se, Si its
In one or more kinds of combinations, doping concentration 3 × 1018~1 × 1019/cm3；P++The dopant of GaAs for Mg, Zn, C wherein
One or more kinds of combinations, doping concentration requirement 2 × 1019~5 × 1019/cm3；
(3) battery in preparing：Successively grow AlGaAs the back of the body electric field, InGaAs bases, InGaAs launch sites, AlInP or
GaInP Window layers, the middle battery energy gap are 1.4eV, wherein, 0.05~0.1 μm of AlGaAs back of the body electric fields thickness, InGaAs
1.5~2.5 μm of base thickness, 0.1~0.2 μm of InGaAs launch sites thickness, AlInP or GaInP window layer thickness 0.05~
0.15μm；
(4) the second tunnel junctions are prepared：Second tunnelling becomes N++GaInP/P++AlGaAs, grows N first++GaInP layers, then
Grow P++AlGaAs layers, wherein, GaInP layers and AlGaAs layers of thickness are 0.01~0.04 μm, N++The dopant of GaInP
For Te, Se, Si one or more kinds of combinations therein, doping concentration 3 × 1018~1 × 1019/cm3；The dopant of P++AlGaAs
For Mg, Zn, C one or more kinds of combinations therein, doping concentration requirement 2 × 1019~5 × 1019/cm3；
(5) top battery is prepared：AlGaInP back ofs the body electric field, GaInP bases and GaInP launch sites, wherein GaInP are grown successively
Material energy gap is 1.8~1.9eV, AlGaInP back of the body electric fields, and the gross thickness of GaInP bases and GaInP launch sites three are
0.5~1 μm；
(5) ITO Window layers are prepared：By way of magnetron sputtering or electron beam evaporation plating, in top battery GaInP launch sites
One layer of ito thin film is deposited in surface, and thickness is 0.05~0.15 μm；By be deposited ito thin film be put into 60~80 DEG C the concentrated sulfuric acid it is molten
6~12min of etching time in liquid, obtains the ITO surfaces with roughening pattern.
As an optimization, step (1) prepares InGaAs cushions afterwards, and InGaAs buffer layer thicknesses are 0.5~1.5 μm；
As an optimization, distributed Bragg reflector (DBR), the distributed Bragg reflector are prepared after step (2)
For 15~30 pairs of AlGaAs/InGaAs structures, AlGaAs layers, InGaAs layers of thickness wherein in each pair AlGaAs/InGaAs structures
Degree all in accordance with λ/4n calculate, wherein 850nm≤λ≤920nm, n be corresponding A lGaAs or InGaAs refractive index, AlGaAs layers
Middle Al molar constituents are 50%~70%；The molar constituent of In is 1% in InGaAs layers.
The utility model uses Window layer of the ITO materials with roughening structure as gallium arsenide solar cell top battery.
Since the energy gap of ITO is more than AlInP, absorption of the Window layer to incident sunlight can be reduced；ITO materials are carried out at the same time
Roughening, can effectively improve the incidence of sunlight, and since ITO has good electric conductivity, can remove traditional conduction
Grid line, the Problem of Shading for avoiding metal grid lines from bringing, improves the current density for pushing up battery, improves the conversion effect of whole solar cell
Rate.To sum up, by using Window layer of the ITO materials with roughening structure as gallium arsenide solar cell top battery, Ke Yizeng
The incidence of strong sunlight, reduces blocking for solar battery surface, and then obtains efficient solar cell.
Brief description of the drawings
The structure diagram of Fig. 1 the utility model gallium arsenide solar cells.
Embodiment
It is embodiment below, it is intended to the utility model is described further, the utility model can have a variety of differences
Form, which is merely illustrative, and should not be construed as limited to embodiments set forth herein.
Embodiment 1
It is a kind of with new Window layer high-efficiency three-joint cascade gallium arsenide solar cell, including p-type contact layer, bottom battery,
First tunnel junctions, middle battery, the second tunnel junctions, top battery and Window layer；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
Connected between the bottom battery and middle battery by the first tunnel junctions；
The bottom battery includes P-Ge bases, N-Ge launch sites and GaInP nucleating layers successively from the bottom to top；In the P-Ge
Base region surface passes through PH3Diffuse to form N-Ge launch sites and GaInP nucleating layers, 0.1~0.3 μm of N-Ge launch sites thickness,
The GaInP is nucleated 0.03~0.1 μm of layer thickness；
InGaAs cushions are equipped between first tunnel junctions and bottom battery, InGaAs buffer layer thicknesses are 0.5~1.5
μm；
First tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers with P++GaAs layer thickness 0.01
~0.04 μm, the dopant of N++GaAs combines for Te, Se, Si one or more therein, doping concentration 3 × 1018~1 ×
1019/cm3；The dopant of P++GaAs is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5
×1019/cm3；
Distributed Bragg reflector (DBR), the distribution Bradley are equipped between first tunnel junctions and middle battery
Lattice reflector by 15~30 pairs of AlGaAs/InGaAs structure compositions, in each pair AlGaAs/InGaAs structures AlGaAs layers and
InGaAs layers of thickness is calculated all in accordance with λ/4n, and wherein 850nm≤λ≤920nm, n are corresponding A lGaAs or InGaAs material
Refractive index；Al molar constituents are 50%~70% in AlGaAs；The molar constituent of In is 1% in InGaAs；
The middle battery includes AlGaAs back ofs the body electric field, InGaAs bases, InGaAs launch sites and AlInP successively from the bottom to top
Or GaInP Window layers, the InGaAs materials energy gap of wherein InGaAs bases and InGaAs launch sites is 1.4eV, AlGaAs
0.05~0.1 μm of back of the body electric field thickness, 1.5~2.5 μm of InGaAs bases thickness, 0.1~0.2 μm of InGaAs launch sites thickness,
AlInP or GaInP window layer thickness is 0.05~0.15 μm；
Connected between the middle battery and the top battery by the second tunnel junctions；
Second tunnelling becomes N++GaInP/P++AlGaAs, wherein, GaInP layers are with AlGaAs layers of thickness
0.01~0.04 μm, N++The dopant of GaInP combines for Te, Se, Si one or more therein, doping concentration 3 × 1018
~1 × 1019/cm3；The dopant of P++AlGaAs combines for Mg, Zn, C one or more therein, and doping concentration requirement 2 ×
1019~5 × 1019/cm3；
The top battery includes AlGaInP back ofs the body electric field, GaInP bases and GaInP launch sites successively from the bottom to top, wherein
GaInP materials energy gap is 1.8~1.9eV, and AlGaInP back ofs the body electric field, GaInP bases and the gross thickness of GaInP launch sites are
0.5~1 μm；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；
The upper strata of the top battery is additionally provided with Window layer, and the Window layer is the ITO Window layers using ITO materials, is passed through
The mode of magnetron sputtering or electron beam evaporation is in the generation of top battery upper strata；
The ITO Window layers are the ITO with roughening structure, and the thickness of ITO is 0.05~0.15 μm, and coarsening solution is using dense
H2SO4, 60~80 DEG C of corrosion temperature, 6~12min of etching time；This layer of ITO structure both has the function that Window layer, has at the same time
The effect of grid line, reduces chip cost, improves the incident area of sunlight.
Embodiment 2
Each layer growth uses MOCVD technologies (Metal Organic Chemical Vapor in the present embodiment
Deposition, metallo-organic compound chemical gaseous phase deposition).
There is the production method of the high-efficiency three-joint cascade gallium arsenide solar cell of roughening structure described in embodiment 1, its step
For,
(1) bottom battery is prepared：On p-type contact layer, pass through PH3The substrate surface that is diffused in form N-Ge launch sites, P-
Ge bases are the transition region of p-type contact layer and N-Ge launch sites, base of the P-Ge bases as bottom battery, the N-Ge launch sites
0.1~0.3 μm of thickness；Regrowth GaInP nucleating layers afterwards, thickness are 0.03~0.10 μm；The p-type contact layer is p-type Ge
Substrate；
(2) InGaAs cushions are prepared：The bottom of at, the GaInP nucleation layer surface growth InGaAs cushions of battery, thickness are
0.5~1.5 μm；
(3) the first tunnel junctions are prepared：In one tunnel junctions of InGaAs buffer-layer surfaces growth regulation, first tunnelling becomes N+
+ GaAs/P++GaAs structures, wherein, N++GaAs layers and P++GaAs layer thickness are at 0.01~0.04 μm, the doping of N++GaAs
Agent is combined for Te, Se, Si one or more therein, doping concentration 3 × 1018~1 × 1019/cm3；The dopant of P++GaAs
For Mg, Zn, C one or more kinds of combinations therein, doping concentration requirement 2 × 1019~5 × 1019/cm3；
(4) DBR is prepared：In the P++GaAs layer surfaces growth DBR (distributed Bragg reflector) of the first tunnel junctions, institute
DBR is stated by 15~30 pairs of AlGaAs/InGaAs structure compositions, AlGaAs layers and InGaAs in each pair AlGaAs/InGaAs structures
The thickness of layer is calculated all in accordance with λ/4n, and 850nm≤λ≤920nm, n are the refraction of corresponding A lGaAs materials or InGaAs materials
Rate；；The molar constituent of Al is 50% in AlGaAs structures；The molar constituent of In is 1% in InGaAs structures；
(5) battery in preparing：Battery in being grown successively on last surface to AlGaAs/InGaAs structures of DBR
AlGaAs back ofs the body electric field, InGaAs bases, InGaAs launch sites and AlInP or GaInP Window layers, the middle battery energy gap are
1.4eV, wherein 0.05~0.1 μm of AlGaAs back of the body electric fields thickness, 1.5~2.5 μm of InGaAs bases thickness is described
0.1~0.2 μm of InGaAs launch sites thickness, the window layer thickness are 0.05~0.15 μm；；Alternatively, the AlInP or
GaInP Window layers are AlInP Window layers or GaInP Window layers；
(6) the second tunnel junctions are prepared：In two tunnel junctions of window layer surface growth regulation described in middle battery, second tunnel junctions
For N++GaInP/P++AlGaAs structures, wherein, N++GaAs layers and P++GaAs layer thickness are at 0.01~0.04 μm, N++GaAs
Dopant be Te, Se, Si one or more kinds of combinations therein, doping concentration 3 × 1018~1 × 1019/cm3；P++GaAs's
Dopant is Mg, Zn, C one or more kinds of combinations therein, and doping concentration requires 2 × 1019~5 × 1019/cm3；
(7) top battery is prepared：In the P of the second tunnel junctions++AlGaAs layer surfaces grow the AlGaInP back of the body electricity of top battery successively
, GaInP bases and GaInP launch sites, the top battery energy gap be 1.8~1.9eV, wherein AlGaInP carry on the back electric field,
The gross thickness of GaInP bases and GaInP launch sites is 0.5~1 μm；
(8) Window layer is prepared：Pass through magnetron sputtering or electron beam evaporation plating on the surface of GaInP launch sites described in the battery of top
Mode be deposited one layer of ito thin film, thickness is 0.05~0.15 μm；60~80 DEG C of the concentrated sulfuric acid ito thin film will be deposited it has been put into
6~12min of etching time in solution, obtains the ITO surfaces with roughening pattern.
It the utility model is related to a kind of high-efficiency three-joint cascade GaAs with roughening structure tin indium oxide (ITO) Window layer
Solar cell.The utility model battery includes p-type contact layer and the bottom battery by diffuseing to form, cushion, the first tunnel junctions,
DBR, middle battery, the second tunnel junctions, push up battery, and the ITO Window layers with roughening structure, its midsole battery energy gap are
0.67eV, middle battery energy gap are 1.4eV, and top battery energy gap is 1.9eV；In addition, the window layer material that battery will be pushed up
It is designed to the ITO materials of roughening, since the energy gap of ITO is more than AlInP, can be reduced suction of the Window layer to incident light
Receive, also reduce the reflection of sunlight, improve impingement rate；Simultaneously as ITO materials have excellent electric conductivity, Ke Yiqu
Substituting metal grid line, not only avoids metal grid lines and incident sunlight is blocked, and reduces top battery Window layer to incidence
The absorption and reflection of light, improve absorption of the utility model to sunlight, improve the current density of the utility model top battery, into
And the transfer efficiency of the utility model is improved, and cost can be reduced.
To sum up, with using the ITO tops battery Window layer with roughening structure, cost can be not only reduced, and can increase
Effective incidence of strong sunlight, improves the current density of top battery, improves the transfer efficiency of solar cell.
Claims (8)
1. a kind of high-efficiency three-joint cascade gallium arsenide solar cell with new Window layer, it is characterised in that contacted including p-type
Layer, bottom battery, the first tunnel junctions, middle battery, the second tunnel junctions, top battery and Window layer；
The bottom battery, middle battery and top battery are three knot batteries, are arranged in order from the bottom to top；
Connected between the bottom battery and middle battery by the first tunnel junctions；
Connected between the middle battery and the top battery by the second tunnel junctions；
The bottom battery lower floor is additionally provided with p-type contact layer, and the p-type contact layer is p-type Ge substrates；
The upper strata of the top battery is additionally provided with Window layer, and the Window layer is the ITO Window layers using ITO materials, passes through magnetic control
The mode of sputtering or electron beam evaporation is in top battery upper strata generation.
2. solar cell as claimed in claim 1, it is characterised in that the bottom battery from the bottom to top successively include P-Ge bases,
N-Ge launch sites and GaInP nucleating layers；Pass through PH in p-type contact layer surface3Diffuse to form N-Ge launch sites and GaInP into
Stratum nucleare, P-Ge bases are the transition region of p-type contact layer and N-Ge launch sites, base of the P-Ge bases as bottom battery；The N-
0.1~0.3 μm of Ge launch sites thickness, the GaInP are nucleated 0.03~0.10 μm of layer thickness；The bottom battery energy gap is
0.67eV。
3. solar cell as claimed in claim 1, it is characterised in that first tunnelling becomes N++GaAs/P++GaAs, wherein, N++GaAs layers and P++GaAs layer thickness is at 0.01~0.04 μm.
4. solar cell as claimed in claim 1, it is characterised in that InGaAs is equipped between first tunnel junctions and bottom battery
Cushion, the InGaAs buffer layer thicknesses are 0.5~1.5 μm.
5. solar cell as claimed in claim 1, it is characterised in that be equipped with DBR between first tunnel junctions and middle battery and (divide
Cloth Bragg reflector), the DBR is by 15~30 pairs of AlGaAs/InGaAs structure compositions, each pair AlGaAs/InGaAs knots
AlGaAs layers and InGaAs layers of thickness is calculated all in accordance with λ/4n in structure, and wherein 850nm≤λ≤920nm, n are corresponding A lGaAs
Or the refractive index of InGaAs materials.
6. solar cell as claimed in claim 1, it is characterised in that the middle battery includes AlGaAs back of the body electricity successively from the bottom to top
Field, InGaAs bases, InGaAs launch sites, AlInP or GaInP Window layers, the middle battery energy gap are 1.4eV, wherein,
0.05~0.1 μm of AlGaAs back of the body electric fields thickness, 1.5~2.5 μm of InGaAs bases thickness, InGaAs launch sites thickness 0.1~0.2
μm, AlInP or GaInP window layer thickness is 0.05~0.15 μm.
7. solar cell as claimed in claim 1, it is characterised in that second tunnelling becomes N++GaInP/P++AlGaAs, its
In, N++GaInP layers and P++AlGaAs layers of thickness is 0.01~0.04 μm.
8. solar cell as claimed in claim 1, it is characterised in that the top battery includes AlGaInP and carries on the back successively from the bottom to top
Electric field, GaInP bases and GaInP launch sites, the top battery energy gap is 1.8~1.9eV, wherein, AlGaInP back of the body electricity
The gross thickness of field, GaInP bases and GaInP launch sites is 0.5~1 μm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706247A (en) * | 2017-08-22 | 2018-02-16 | 南昌凯迅光电有限公司 | A kind of high-efficiency three-joint cascade gallium arsenide solar cell and manufacture method with new Window layer |
| CN111725332A (en) * | 2020-06-11 | 2020-09-29 | 中山德华芯片技术有限公司 | High-performance three-junction gallium arsenide solar cell |
-
2017
- 2017-08-22 CN CN201721056280.3U patent/CN207320126U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706247A (en) * | 2017-08-22 | 2018-02-16 | 南昌凯迅光电有限公司 | A kind of high-efficiency three-joint cascade gallium arsenide solar cell and manufacture method with new Window layer |
| CN107706247B (en) * | 2017-08-22 | 2023-04-28 | 南昌凯迅光电股份有限公司 | High-efficiency three-junction cascading gallium arsenide solar cell with novel window layer and manufacturing method |
| CN111725332A (en) * | 2020-06-11 | 2020-09-29 | 中山德华芯片技术有限公司 | High-performance three-junction gallium arsenide solar cell |
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