CN111725332A - High-performance three-junction gallium arsenide solar cell - Google Patents
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 33
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 39
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 24
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 24
- 230000001052 transient effect Effects 0.000 claims abstract description 24
- 230000005641 tunneling Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 11
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 238000005516 engineering process Methods 0.000 claims abstract description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 39
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 4
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical group [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000869 ion-assisted deposition Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a high-performance three-junction gallium arsenide solar cell, which comprises a Ge substrate, wherein a Ge bottom cell, a first tunneling junction, a GaInAs middle cell, a second tunneling junction and a GaInP top cell are epitaxially grown on the Ge substrate by adopting an MOCVD (metal organic chemical vapor deposition) technology; the transient metal oxide TMO is deposited on the emitting area of the GaInP top cell to obtain a TMO window layer, the forbidden bandwidth of the TMO window layer is larger than 3.0eV, the transient metal oxide can form good ohmic contact with a metal upper electrode of the GaInP top cell, the refractive index of the TMO window layer is adjusted in a range of 1.4-2.0, the TMO window layer can effectively play a role of an antireflection film, the short-circuit current and the photoelectric conversion efficiency of the cell can be improved by optimizing the photoelectric performance of the transient metal oxide, the structure of the cell can be simplified, the process steps of a chip are reduced, and the cost is effectively reduced.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a high-performance triple-junction gallium arsenide solar cell.
Background
At present, the triple-junction gallium arsenide has been widely applied to space power systems due to high photoelectric conversion efficiency and good radiation resistance. For gallium arsenide solar cells, the energy gap of the traditional window layer material is generally about 2.0eV, and the traditional window layer material has obvious light absorption to blue light, so that a new window layer material or a new device structure is needed to be adopted to improve the short-wave response of the top cell, improve the current matching between the middle and top cells, and further improve the overall performance of the cell.
The window layer of the gallium arsenide solar cell generally adopts wide bandgap materials such as GaInP, AlGaInP, AlInP, and AlCaAs to inhibit interface recombination and limit charge back diffusion (the window layer is located between the antireflective film and the emission layer). To improve the spectral utilization of the cell, Al is generally used2O3/TiO2、ZnS/MgF2The double-layer film is used as an antireflection film of the gallium arsenide solar cell. However, the antireflection film has a considerable distance from the ideal 100% transmission effect and is relatively high in cost.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a high-performance triple-junction gallium arsenide solar cell, which adopts transient metal oxide with wide forbidden band as a window layer of the triple-junction gallium arsenide solar cell, has good photoelectric performance and can replace the traditional window layer material based on a compound semiconductor, and simultaneously can effectively reduce the reflection of incident light.
In order to achieve the purpose, the technical scheme provided by the invention is as follows: a high-performance three-junction gallium arsenide solar cell comprises a Ge substrate, wherein a Ge bottom cell, a first tunneling junction, a GaInAs middle cell, a second tunneling junction and a GaInP top cell are epitaxially grown on the Ge substrate by adopting an MOCVD technology; the transient metal oxide TMO is deposited on the emitting area of the GaInP top cell to obtain a TMO window layer, the forbidden bandwidth of the TMO window layer is larger than 3.0eV, the transient metal oxide can form good ohmic contact with a metal upper electrode of the GaInP top cell, the refractive index of the transient metal oxide is adjusted in a range of 1.4-2.0, the transient metal oxide can play a role of an antireflection film, and the short-circuit current and the photoelectric conversion efficiency of the cell can be improved by optimizing the photoelectric performance of the transient metal oxide.
Further, the transient metal oxide is molybdenum oxide or tungsten oxide.
Further, the Ge bottom battery, the GaInAs middle battery and the GaInP top battery are in lattice matching;
the GaInP top cell comprises a P-type doped AlInP or AlGaInP back field layer, a P-type doped GaInP base region, an n-type doped GaInP emitter region and a TMO window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlInP or AlGaInP back field layer is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInP base region is 300-600nm, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-100nm, and the doping concentration is 1 × 1017-1×1019cm-3(ii) a The thickness of the TMO window layer is 30-200 nm;
the second tunneling junction comprises an n-type GaInP layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaInP layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3；
The GaInAs middle cell comprises a P-type doped AlGaAs back field layer, a P-type doped GaInAs base region, an n-type doped GaInP emitter region and an n-type doped AlInP window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlGaAs back field layer is 500-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInAs base region is 1-2 um, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the n-type doped AlInP window layer is 30-100nm, and the doping concentration is 1 × 1017-1×1019cm-3；
Distributed Bragg reflection is arranged between the first tunneling junction and the GaInAs middle batteryThe DBR comprises 10-20 periods of n-type doped AlGaAs and n-type doped GaAs which are alternately grown in sequence, wherein the thickness of the n-type doped AlGaAs and the n-type doped GaAs is 30-100nm, and the n-type doping concentration is 1 × 1017-1×1019cm-3；
The first tunneling junction comprises an n-type GaAs layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaAs layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3。
Furthermore, the GaInAs middle battery and the GaInP top battery are in lattice matching, and the Ge bottom battery is in lattice mismatch with the GaInAs middle battery and the GaInP top battery and is connected with the GaInAs middle battery and the GaInP top battery through a gradient buffer layer GB;
the GaInP top cell comprises a P-type doped AlInP or AlGaInP back field layer, a P-type doped GaInP base region, an n-type doped GaInP emitter region and a TMO window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlInP or AlGaInP back field layer is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInP base region is 300-600nm, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-100nm, and the doping concentration is 1 × 1017-1×1019cm-3(ii) a The thickness of the TMO window layer is 30-200 nm;
the second tunneling junction comprises an n-type GaInP layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaInP layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3；
The GaInAs middle cell comprises a P-type doped AlGaAs back field layer, a P-type doped GaInAs base region, an n-type doped GaInP emitter region and an n-type doped AlInP window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlGaAs back field layer is 500-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInAs base region is 1-2 um, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the n-type doped AlInP window layer is 30-100nm, and the doping concentration is 1 × 1017-1×1019cm-3；
A distributed Bragg reflector DBR and a gradient buffer layer GB are sequentially arranged between the first tunneling junction and the GaInAs middle battery; the DBR comprises 10-20 periods of n-type doped Al which are alternately grown in sequencey(GaxIn1-x)1-yAs and n-doped GaxIn1-xWherein the thickness of the n-type doped AlGaAs and n-type doped GaAs is 30-100nm, and the n-type doping concentration is 1 × 1017-1×1019cm-3Y is 0.9-1.0, x is 0.9-1.0; the GB comprises a plurality of Ga which are sequentially superposedxIn1-xAs sub-battery, Ge bottom battery and Ga by In component linear gradual and/or step methodxIn1-xAs sub-batteries are connected in series, and x is 0.9-1.0;
the first tunneling junction comprises an n-type GaAs layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaAs layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3。
Further, the forbidden bandwidth of the Ge bottom battery, the forbidden bandwidth of the GaInAs middle battery and the forbidden bandwidth of the GaInP top battery are respectively 0.67eV, 1.3eV and 1.8 eV.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the wide-bandgap transient metal oxide with good conductivity can obviously reduce the absorption of the window layer to incident light.
2. The transient metal oxide can form good ohmic contact with the metal electrode, the epitaxial growth of a gallium arsenide cap layer in the traditional process can be reduced, and meanwhile, the cap layer corrosion process in the chip process is avoided.
3. The refractive index of the transient metal oxide can be changed within the range of 1.4-2.0 by adjusting the process parameters, and the effect of an antireflection film can be effectively achieved.
4. By optimizing the photoelectric property of the transient metal oxide window layer material, the short-circuit current and the photoelectric conversion efficiency of the battery can be obviously improved, and meanwhile, the structure of the battery can be simplified, the process steps of a chip are reduced, and the cost is effectively reduced.
Drawings
Fig. 1 is a schematic structural diagram of a forward lattice-matched triple-junction gaas solar cell in example 1.
Fig. 2 is a schematic structural diagram of a forward lattice mismatched triple junction gaas solar cell in example 2.
Detailed Description
The present invention will be further described with reference to the following specific examples.
Example 1
Referring to fig. 1, the forward lattice-matched triple-junction gaas solar cell provided in this embodiment includes a Ge substrate, the Ge substrate is placed in an MOCVD operating chamber, the growth temperature is set to 500 ℃ to 800 ℃, a Ge bottom cell (may also be abbreviated as Ge cell), a first tunnel junction, a GaInAs middle cell (may also be abbreviated as GaInAs cell), a second tunnel junction, and a GaInP top cell (may also be abbreviated as GaInP cell) are epitaxially grown on the substrate in sequence, the substrate after the epitaxial growth is placed in an Ion Assisted Deposition (IAD) or magnetron sputtering (Sputter) device, a Transient Metal Oxide (TMO) is deposited on an emission region of the GaInP top cell, so as to obtain a TMO window layer, wherein the transient metal oxide is molybdenum oxide or tungsten oxide, the band gap of the TMO window layer is greater than 3.0eV, and the light absorption at 400nm wavelength when molybdenum oxide, tungsten oxide, or the like with the same thickness is used as the window layer is not more than 1%, the quantum effect of the battery at 400nm-550nm can be effectively improved, in addition, the transient metal oxide can form good ohmic contact with a metal upper electrode of a GaInP top battery, the refractive index of the transient metal oxide can be adjusted within the range of 1.4-2.0, the transient metal oxide can play a role of an antireflection film, the short-circuit current and the photoelectric conversion efficiency of the battery can be obviously improved by optimizing the photoelectric property of a transient metal oxide window layer material, the structure of the battery can be simplified, the chip process steps are reduced, and the cost is effectively reduced.
The Ge bottom battery, the GaInAs middle battery and the GaInP top battery are in lattice matching.
The GaInP top cell comprises a P-type doped AlInP or AlGaInP back field layer, a P-type doped GaInP base region, an n-type doped GaInP emitter region and a TMO window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlInP or AlGaInP back field layer is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInP base region is 300-600nm, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-100nm, and the doping concentration is 1 × 1017-1×1019cm-3(ii) a The thickness of the TMO window layer is 30-200 nm.
The second tunneling junction comprises an n-type GaInP layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaInP layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3。
The GaInAs middle cell comprises a P-type doped AlGaAs back field layer, a P-type doped GaInAs base region, an n-type doped GaInP emitter region and an n-type doped AlInP window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlGaAs back field layer is 500-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInAs base region is 1-2 um, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the n-type doped AlInP window layer is 30-100nm, and the doping concentration is 1 × 1017-1×1019cm-3。
A Distributed Bragg Reflector (DBR) is arranged between the first tunneling junction and the GaInAs middle battery) The DBR comprises n-type doped AlGaAs and n-type doped GaAs which are alternately grown in sequence for 10-20 periods, wherein the thickness of the n-type doped AlGaAs and the n-type doped GaAs is 30-100nm, and the n-type doping concentration is 1 × 1017-1×1019cm-3。
The first tunneling junction comprises an n-type GaAs layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaAs layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3。
Example 2
Referring to fig. 2, a forward lattice mismatched triple junction gaas solar cell provided in this embodiment is different from embodiment 1 in that the GaInAs middle cell and the GaInP top cell are lattice matched, the Ge bottom cell is lattice mismatched with the GaInAs middle cell and the GaInP top cell and is connected by a graded buffer layer (GB), and the forbidden bandwidths of the Ge bottom cell, the GaInAs middle cell and the GaInP top cell are preferably 0.67eV, 1.3eV, and 1.8 eV; a Distributed Bragg Reflector (DBR) and a gradient buffer layer (GB) are sequentially arranged between the first tunneling junction and the GaInAs middle battery; the DBR comprises 10-20 periods of n-type doped Al which are alternately grown in sequencey(GaxIn1-x)1-yAs and n-doped GaxIn1-xWherein the thickness of the n-type doped AlGaAs and n-type doped GaAs is 30-100nm, and the n-type doping concentration is 1 × 1017-1×1019cm-3Y is 0.9-1.0, x is 0.9-1.0; the GB comprises a plurality of Ga which are sequentially superposedxIn1-xAs sub-battery, Ge bottom battery and Ga by In component linear gradual and/or step methodxIn1-xAs sub-batteries are connected in series, and x is 0.9-1.0.
The above-mentioned embodiments are merely preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, so that the changes in the shape and principle of the present invention should be covered within the protection scope of the present invention.
Claims (5)
1. A high-performance three-junction gallium arsenide solar cell comprises a Ge substrate, wherein a Ge bottom cell, a first tunneling junction, a GaInAs middle cell, a second tunneling junction and a GaInP top cell are epitaxially grown on the Ge substrate by adopting an MOCVD technology; the method is characterized in that: and depositing a transient metal oxide TMO on an emitting area of the GaInP top cell to obtain a TMO window layer, wherein the forbidden bandwidth of the TMO window layer is more than 3.0eV, the transient metal oxide can form good ohmic contact with a metal upper electrode of the GaInP top cell, the refractive index of the TMO window layer can be adjusted by changing within the range of 1.4-2.0, the TMO window layer can play a role of an antireflection film, and the short-circuit current and the photoelectric conversion efficiency of the cell can be improved by optimizing the photoelectric property of the transient metal oxide.
2. The high performance triple junction gaas solar cell of claim 1, wherein: the transient metal oxide is molybdenum oxide or tungsten oxide.
3. The high performance triple junction gaas solar cell of claim 1, wherein: the Ge bottom battery, the GaInAs middle battery and the GaInP top battery are in lattice matching;
the GaInP top cell comprises a P-type doped AlInP or AlGaInP back field layer, a P-type doped GaInP base region, an n-type doped GaInP emitter region and a TMO window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlInP or AlGaInP back field layer is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInP base region is 300-600nm, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-100nm, and the doping concentration is 1 × 1017-1×1019cm-3(ii) a The thickness of the TMO window layer is 30-200 nm;
the second tunneling junction comprises an n-type GaInP layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaInP layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3；
The GaInAs middle cell comprises a P-type doped AlGaAs back field layer, a P-type doped GaInAs base region, an n-type doped GaInP emitter region and an n-type doped AlInP window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlGaAs back field layer is 500-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInAs base region is 1-2 um, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the n-type doped AlInP window layer is 30-100nm, and the doping concentration is 1 × 1017-1×1019cm-3；
A distributed Bragg reflector DBR is arranged between the first tunneling junction and the GaInAs middle cell, the DBR comprises n-type doped AlGaAs and n-type doped GaAs which alternately grow in sequence in 10-20 periods, the thickness of the n-type doped AlGaAs and the n-type doped GaAs is 30-100nm, and the n-type doping concentration is 1 × 1017-1×1019cm-3；
The first tunneling junction comprises an n-type GaAs layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaAs layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3。
4. The high performance triple junction gaas solar cell of claim 1, wherein: the GaInAs middle battery is matched with the GaInP top battery in lattice mode, and the Ge bottom battery is mismatched with the GaInAs middle battery and the GaInP top battery in lattice mode and is connected with the GaInP top battery through a gradient buffer layer GB;
the GaInP top cell comprises a P-type doped AlInP or AlGaInP back field layer, a P-type doped GaInP base region, an n-type doped GaInP emitter region and a TMO window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlInP or AlGaInP back field layer is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInP base region is 300-600nm, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-100nm, and the doping concentration is 1 × 1017-1×1019cm-3(ii) a The thickness of the TMO window layer is 30-200 nm;
the second tunneling junction comprises an n-type GaInP layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaInP layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3；
The GaInAs middle cell comprises a P-type doped AlGaAs back field layer, a P-type doped GaInAs base region, an n-type doped GaInP emitter region and an n-type doped AlInP window layer which are sequentially stacked according to a layered structure, wherein the thickness of the P-type doped AlGaAs back field layer is 500-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the P-type doped GaInAs base region is 1-2 um, and the doping concentration is 1 × 1016-1×1017cm-3The thickness of the n-type doped GaInP emitting region is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3The thickness of the n-type doped AlInP window layer is 30-100nm, and the doping concentration is 1 × 1017-1×1019cm-3；
A distributed Bragg reflector DBR and a gradient buffer layer GB are sequentially arranged between the first tunneling junction and the GaInAs middle battery; the DBR comprises 10-20 periods of n-type doped Al which are alternately grown in sequencey(GaxIn1-x)1-yAs and n-doped GaxIn1-xWherein the thickness of the n-type doped AlGaAs and n-type doped GaAs is 30-100nm, and the n-type doping concentration is 1 × 1017-1×1019cm-3Y is 0.9-1.0, x is 0.9-1.0; the GB comprises a plurality of Ga which are sequentially superposedxIn1-xAs sub-battery, Ge bottom battery and Ga by In component linear gradual and/or step methodxIn1-xAs sub-batteries are connected in series, and x is 0.9-1.0;
the first tunneling junction comprises an n-type GaAs layer and a p-type AlGaAs layer which are superposed according to a laminated structure, wherein the n-type GaAs layer is 5-30nm thick, and the doping concentration is 1 × 1018-1×1020cm-3The thickness of the p-type AlGaAs layer is 5-30nm, and the doping concentration is 1 × 1018-1×1020cm-3。
5. The high performance triple junction gallium arsenide solar cell of claim 4, wherein: the forbidden band widths of the Ge bottom battery, the GaInAs middle battery and the GaInP top battery are respectively 0.67eV, 1.3eV and 1.8 eV.
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