CN110534612B - Preparation method of reverse growth three-junction solar cell - Google Patents

Preparation method of reverse growth three-junction solar cell Download PDF

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CN110534612B
CN110534612B CN201810517073.6A CN201810517073A CN110534612B CN 110534612 B CN110534612 B CN 110534612B CN 201810517073 A CN201810517073 A CN 201810517073A CN 110534612 B CN110534612 B CN 110534612B
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方亮
张恒
张启明
高鹏
王赫
唐悦
石璘
刘如彬
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CETC 18 Research Institute
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Abstract

The invention relates to a preparation method of a reverse growth triple-junction solar cell. The invention belongs to the technical field of solar cells. A preparation method of a reverse growth triple-junction solar cell is characterized by comprising the following steps: the preparation process of the reversely grown GaInP/GaAs/GaInAsN triple-junction solar cell uses MOCVD-MBE technology to epitaxially grow lattice-matched solar cell material on a GaAs or Ge substrate by MOCVD, and comprises two sub-cells: and transferring the prepared device structure to MBE to grow GaInAsN sub-cells, connecting the GaInAsN sub-cells and a support substrate with a metal reflecting layer on the surface through a low-temperature bonding process, and finally completing the stripping of the substrate through chemical etching to obtain the reversely grown triple-junction solar cell. The invention has the advantages of excellent performance, effective increase of the collection efficiency of photon-generated carriers, improvement of the photoelectric conversion efficiency of the triple-junction cell, wide application prospect and the like.

Description

Preparation method of reverse growth three-junction solar cell
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a preparation method of a reverse growth triple-junction solar cell.
Background
At present, the forward lattice matching three-junction gallium arsenide is widely applied to a space power supply system due to high photoelectric conversion efficiency and good radiation resistance. Conversion efficiency of the forward matching triple-junction cascade GaInP/GaAs/Ge solar cell under an AM0 spectrum is close to 30.0%, but the photocurrent density of the cell is generally limited by a top cell, and redundant photocurrent density on a bottom cell cannot be effectively utilized, so that the full-spectrum absorption utilization cannot be realized; meanwhile, a considerable part of energy of the triple-junction cascade gallium arsenide solar cell, which is larger than the forbidden band width of the corresponding sub-cell, is lost in the form of heat energy.
Theoretical analysis shows that the GaInAsN is used for replacing a Ge substrate battery to form a triple-junction solar battery with a band gap structure of 1.86/1.4/1.0eV, not only can the lattice match be kept, but also the optimal band gap combination of the triple-junction solar battery can be achieved, and the theoretical efficiency can reach 45 percent and is higher than the limit efficiency of 42 percent of the traditional triple-junction solar battery.
However, in practical application, the quality of the GaInAsN crystal epitaxially grown by MOCVD is poor, so that the performance of the 1.0eV sub-cell is low, and the overall efficiency of the stacked cell is low. The reason that the crystal quality of the GaInAsN sub-battery material is not high is mainly attributed to two points. On the one hand, the incorporation of N atoms into GaInAs materials can form interstitial defects and even N-related recombination defects such As N-H-VGa or (N-N) As, which can form recombination centers in the energy band, leading to reduced minority carrier lifetimes. On the other hand, the GaInAsN material has a large miscibility gap due to the large difference between the covalent radius and the electronegativity of the N atom and the As atom, so that the phase separation phenomenon is easy to occur, the carrier mobility is low due to the non-uniformity of the component distribution of the N in the InGaAs material and the resulting alloy disordered scattering, the diffusion length of minority carriers is reduced, and at the moment, the material layer is too thick to form effective collection of photogenerated carriers. However, if the thickness of the GaInNAs material layer is not enough, photons with corresponding wavelengths cannot be completely absorbed, and the current density is reduced, which seriously affects the photoelectric conversion performance of the cell. The adoption of MBE low-temperature growth is an effective method for obtaining high-quality GaInNAs, but the high-temperature epitaxial growth of GaInP and GaAs sub-cells by MOCVD in the forward growth process will affect the performance of the GaInNAs sub-cells.
Disclosure of Invention
The invention provides a preparation method of a reverse growth triple-junction solar cell for solving the technical problems in the prior art.
The invention aims to provide a preparation method of a reverse growth triple-junction solar cell, which has the characteristics of excellent cell performance, capability of effectively increasing the collection efficiency of photo-generated carriers, capability of improving the photoelectric conversion efficiency of the triple-junction cell, wide application prospect and the like.
The preparation method of the GaInP/GaAs/GaInAsN triple-junction solar cell comprises the following preparation steps:
step 1, epitaxial reverse growth preparation of GaInP and GaInAs sub-batteries
Placing a GaAs or Ge substrate in an MOCVD operating chamber, setting the growth temperature to be 500-800 ℃, and epitaxially growing a GaAs buffer layer with the thickness of 0.1-0.3um, a GaInP corrosion stop layer with the thickness of 0.1-0.3um, an n-type doped GaAs cap layer with the thickness of 100-500nm, a GaInP battery serving as a top battery, a tunneling junction, a GaAs battery serving as a middle battery, a Bragg reflector (DBR) and a tunneling junction in sequence on the substrate;
step 2, MBE growth is carried out to prepare a GaInAsN sub-battery, the grown device structure is placed in an MBE operation chamber, the growth temperature is set to be 300-500 ℃, a 300nm thick P-type doped GaAs back field layer, a 1-2 μm thick intrinsic GaInAsN absorption layer and a 50-100nm thick n-type doped GaAs emission region are grown;
step 3, bonding the batteries prepared in the steps 1 and 2 with a supporting substrate with a metal reflecting layer on the surface
And (3) carrying out surface treatment on the GaAs back field layer and the metal reflecting layer by a CMP (chemical mechanical polishing) process so as to reduce the surface roughness to be within 1 nm. Carrying out surface activation treatment on the surface of the battery after surface cleaning by using plasma, and attaching the GaInAsN sub-battery and the supporting substrate together by Van der Waals force; a bonding cavity is arranged in the bonding machine and is filled with N2When the temperature of the bonding cavity is raised to 80-120 ℃, preheating the battery for 60-120 seconds; then applying a bonding pressure of 1-5KN, raising the temperature in the bonding cavity to 150-250 ℃ at a temperature rise speed of 15 ℃/min, keeping the temperature constant, bonding for 1-2 hours, and then lowering the temperature in the bonding cavity to room temperature at a temperature drop speed of 3 ℃/min to realize low temperatureBonding;
step 4, stripping the GaAs or Ge substrate
Using HF: H2O2：H2O is 2: 1:1, corroding the Ge substrate and the GaAs buffer layer by using corrosive liquid, and after the Ge substrate and the GaAs buffer layer are stripped from the battery, using HCl H2Etching the GaInP etching stop layer by using an O1: 1 etching solution, and stripping the GaInP etching stop layer from the cell to complete the stripping of the Ge substrate;
and 5, finally, completing the preparation of the GaInP/GaAs/GaInAsN triple-junction cascade solar cell according to the device process of the gallium arsenide solar cell.
The invention relates to a preparation method of a GaInP/GaAs/GaInAsN triple-junction solar cell, which comprises the following steps: first junction GaInP cell: sequentially growing a P-type doped AlGaInP back field layer with the thickness of 100-200nm, a P-type doped GaInP base region with the thickness of 500-1000nm, an n-type doped GaInP emitting region with the thickness of 50-100nm and an n-type doped AlInP window layer with the thickness of 30-100 nm; wherein: the doping concentration of the P-type doped AlGaInP back field layer is 1 multiplied by 1017-1×1019cm-3The doping concentration of the P-type doped GaInP base region is 1 multiplied by 1016-1×1017cm-3The doping concentration of the n-type doped GaInP emitting region is 1 multiplied by 1017-1×1019cm-3The doping concentration of the n-type doped AlInP window layer is 1 multiplied by 1017-1×1019cm-3；
Tunneling junction: sequentially growing an n-type GaInP layer with the thickness of 10-100nm and p-type Al with the thickness of 10-100nm0.4Ga0.6As: wherein: the doping concentration of the n-type GaInP layer is 1 × 1018-1×1020cm-3P-type Al0.4Ga0.6As doping concentration is 1X 1018-1×1020cm-3；
Second junction GaAs cell: sequentially growing a P-type doped AlxGa1-xAs back field layer with the thickness of 100-200nm, a P-type doped GaAs base region with the thickness of 1000-2000nm, an n-type doped GaAs emitter region with the thickness of 50-200nm and an n-type doped AlxGa1-xAs window layer with the thickness of 30-100 nm; wherein: the doping concentration of the P-type doped AlxGa1-xAs back field layer is 1 multiplied by 1017-1×1019cm-3The doping concentration of the P-type doped GaAs base region is 1 multiplied by 1016-1×1017cm-3The doping concentration of the n-type doped GaAs emitter region is 1 × 1017-1×1019cm-3The doping concentration of the n-type doped AlxGa1-xAs window layer is 1 multiplied by 1017-1×1019cm-3、0.3≤x≤0.5；
Distributed Bragg Reflectors (DBRs) alternately grown in sequence to 30-100nm n-doped AlGaAs and 30-100nm n-doped GaInAs with n being 10-20 periods; wherein: n-type doping concentration of 1 × 1017-1×1019cm-3；
Tunneling junction: sequentially growing an n-type GaAs layer with the thickness of 10-100nm and a p-type Al layer with the thickness of 10-100nm0.4Ga0.6As: wherein: the doping concentration of the n-type GaInP layer is 1 × 1018-1×1020cm-3P-type Al0.4Ga0.6As doping concentration is 1X 1018-1×1020cm-3；
Third junction GaInAsN cell: sequentially growing a P-type doped GaAs back field layer with the thickness of 100-200nm, an intrinsic GaInAsN absorption layer with the thickness of 1-2 mu m and an n-type doped GaAs emission region with the thickness of 50-100 nm; wherein: the doping concentration of the P type doped GaAs back field layer is 1 multiplied by 1017-1×1019cm-3The doping concentration of the intrinsic GaInAsN absorption layer is 1 multiplied by 1015-1×1016cm-3The doping concentration of the n-type doped GaAs emitter region is 1 × 1017-1×1019cm-33。
The preparation method of the reverse growth triple-junction solar cell adopts the technical scheme that:
a preparation method of a reverse growth triple-junction solar cell is characterized by comprising the following steps: the preparation process of the reversely grown GaInP/GaAs/GaInAsN triple-junction solar cell uses MOCVD-MBE technology to epitaxially grow lattice-matched solar cell material on a GaAs or Ge substrate by MOCVD, and comprises two sub-cells: and transferring the prepared device structure to MBE to grow GaInAsN sub-cells, connecting the GaInAsN sub-cells and a support substrate with a metal reflecting layer on the surface through a low-temperature bonding process, and finally completing the stripping of the substrate through chemical etching to obtain the reversely grown triple-junction solar cell.
The preparation method of the reverse growth triple-junction solar cell can also adopt the following technical scheme:
the preparation method of the reverse growth three-junction solar cell is characterized by comprising the following steps: the three-junction solar cell structure comprises a GaAs contact layer, a GaInP sub-cell, a first tunneling junction, a GaAs sub-cell, a distributed Bragg emitter, a second tunneling junction and a GaInAsN sub-cell which are sequentially connected.
The preparation method of the reverse growth three-junction solar cell is characterized by comprising the following steps: the forbidden band widths of the three sub-cells of the three-junction solar cell are respectively 1.86 +/-0.05 eV, 1.40 +/-0.05 eV and 1.05 +/-0.05 eV.
The preparation method of the reverse growth three-junction solar cell is characterized by comprising the following steps: first junction GaInP subcell: sequentially growing a P-type doped AlGaInP back field layer with the thickness of 100-200nm, a P-type doped GaInP base region with the thickness of 500-1000nm, an n-type doped GaInP emitting region with the thickness of 50-100nm and an n-type doped AlInP window layer with the thickness of 30-100 nm; wherein: the doping concentration of the P-type doped AlGaInP back field layer is 1 multiplied by 1017-1×1019cm-3The doping concentration of the P-type doped GaInP base region is 1 multiplied by 1016-1×1017cm-3The doping concentration of the n-type doped GaInP emitting region is 1 multiplied by 1017-1×1019cm-3The doping concentration of the n-type doped AlInP window layer is 1 multiplied by 1017-1×1019cm-3；
A first tunneling junction: sequentially growing an n-type GaInP layer with the thickness of 10-100nm and p-type Al with the thickness of 10-100nm0.4Ga0.6As: wherein: the doping concentration of the n-type GaInP layer is 1 × 1018-1×1020cm-3P-type Al0.4Ga0.6As doping concentration is 1X 1018-1×1020cm-3；
Second junction GaAs subcell: sequentially growing a P-type doped AlxGa1-xAs back field layer with the thickness of 100-200nm, a P-type doped GaAs base region with the thickness of 1000-2000nm, an n-type doped GaAs emitter region with the thickness of 50-200nm and an n-type doped AlxGa1-xAs window layer with the thickness of 30-100 nm; wherein: p-type doped AlxGa1-xAs back fieldThe doping concentration of the layer is 1 x 1017-1×1019cm-3The doping concentration of the P-type doped GaAs base region is 1 multiplied by 1016-1×1017cm-3The doping concentration of the n-type doped GaAs emitter region is 1 × 1017-1×1019cm-3The doping concentration of the n-type doped AlxGa1-xAs window layer is 1 multiplied by 1017-1×1019cm-3、0.3≤x≤0.5；
The distributed Bragg reflector is alternately grown into 30-100nm n-type doped AlGaAs and 30-100nm n-type doped GaInAs in sequence, wherein n is more than or equal to 10 and less than or equal to 20 periods; wherein: n-type doping concentration of 1 × 1017-1×1019cm-3；
A second tunneling junction: sequentially growing an n-type GaAs layer with the thickness of 10-100nm and a p-type Al layer with the thickness of 10-100nm0.4Ga0.6As: wherein: the doping concentration of the n-type GaInP layer is 1 × 1018-1×1020cm-3P-type Al0.4Ga0.6As doping concentration is 1X 1018-1×1020cm-3；
Third junction GaInAsN subcell: sequentially growing a P-type doped GaAs back field layer with the thickness of 100-200nm, an intrinsic GaInAsN absorption layer with the thickness of 1-2 mu m and an n-type doped GaAs emission region with the thickness of 50-100 nm; wherein: the doping concentration of the P type doped GaAs back field layer is 1 multiplied by 1017-1×1019cm-3The doping concentration of the intrinsic GaInAsN absorption layer is 1 multiplied by 1015-1×1016cm-3The doping concentration of the n-type doped GaAs emitter region is 1 × 1017-1×1019cm-33。
The preparation method of the reverse growth three-junction solar cell is characterized by comprising the following steps: the structure of the distributed Bragg reflector is characterized in that two lattice-matched materials with different refractive indexes form a basic unit, a plurality of groups of basic units are repeatedly connected in series, or the thickness of the basic units in the group is linearly and gradually changed; or two groups of distributed Bragg reflectors are used to widen the bandwidth of the reflection spectrum, and the bandwidth of each group of reflection spectrum is determined by the refractive index of the material comprising AlAs/GaAs and AlxGa1-xAs/GaInAs or AlxGa1-xAs/AlAs(0<x<1)。
The preparation method of the reverse growth three-junction solar cell is characterized by comprising the following steps: the metal reflecting layer is an Ag, Cu, Au, Ni layer or a multilayer structure composed of the above metals.
The invention should ensure good ohmic contact and mechanical strength of the bonding surface between the GaInAsN sub-battery and the supporting substrate. The bandgap combination of the present invention enables ideal matching of the subcell bandgap to the AM0 solar spectrum.
According to the invention, the GaInAsN sub-battery with reverse growth is adopted, so that the influence of high temperature on the performance in the forward growth process is avoided; the supporting substrate with the metal reflecting layer on the surface can improve the secondary absorption of the GaInAsN sub-battery to photons in the wave band, and further reduce the thickness of the absorbing layer under the condition of keeping the performance of the sub-battery not to be reduced. The GaAs intermediate cell is damaged mainly by the high energy particles. In order to improve the radiation resistance of the GaAs sub-cell, the doping of the base region can be gradient doping, light doping and non-doping (i layer). In order to ensure that the short-circuit current density of the GaAs sub-battery is 0-0.5mA/cm higher than that of the GaInP sub-battery2The thickness of the base region of the GaAs sub-battery is reduced, and meanwhile, the short-circuit current of the GaAs sub-battery is kept unchanged by adopting the DBR structure.
The invention can form a DBR by repeating and connecting a plurality of groups of basic units in series, wherein the basic units are formed by two lattice matched materials with different refractive indexes. The thickness of the basic cells within a group can also be linearly graded, or two groups of DBRs can be used, to broaden the reflection spectrum bandwidth. Each set of reflection spectral bandwidths is determined by the refractive indices of the constituent materials. The invention may be AlAs/GaAs, AlxGa1-xAs/GaInAs、AlxGa1-xAs/AlAs etc. (0)<x<1). The thickness of the basic unit of the DBR can be adjusted to change the central reflection wavelength according to the difference of the forbidden bandwidth and the base region thickness of the intermediate cell; the reflectivity of the light can be achieved by adjusting the number of groups of DBR basic cells.
The invention has the advantages and positive effects that:
compared with the prior art, the preparation method of the reverse growth triple-junction solar cell adopts the brand-new technical scheme of the invention, and has the following obvious characteristics:
1. the invention adopts MOCVD to reversely grow GaInP and GaInAs sub-batteries, and adopts MBE to grow GaInAsN bottom batteries; and then the semiconductor material and the supporting substrate are bonded together by a low-temperature bonding technology, so that the problem of poor performance of the GaInAsN material epitaxially grown by MOCVD is solved.
2. The metal reflecting layer forms secondary absorption of the GaInNAs material to photons in the wave band, which is equivalent to increase the effective absorption of incident photons by the cell base region. The cell structure solves the problem that the diffusion length of minority carriers in the GaInNAs material is small, effectively increases the collection efficiency of photon-generated carriers, and improves the photoelectric conversion efficiency of the triple-junction cell; meanwhile, the influence of high temperature on the performance of the GaInAsN sub-cell in the forward growth process is avoided, and the application prospect of the three-junction solar cell is greatly improved.
Drawings
FIG. 1 is a schematic diagram of a cell structure employing MOCVD-MBE reverse growth in the preparation process of the present invention;
FIG. 2 is a schematic structural diagram of a GaInP/GaAs/GaInAsN triple-junction solar cell prepared by the invention.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings:
reference is made to figures 1 and 2.
Example 1
A method for preparing a reversely grown three-junction solar cell, namely a GaInP/GaAs/GaInAsN three-junction solar cell, uses MOCVD-MBE technology to epitaxially grow a lattice-matched solar cell material on a GaAs or Ge substrate by MOCVD, and comprises two sub-cells: and transferring the prepared device structure to MBE to grow GaInAsN sub-cells, connecting the GaInAsN sub-cells and a support substrate with a metal reflecting layer on the surface through a low-temperature bonding process, and finally completing the stripping of the substrate through chemical etching to obtain the reversely grown triple-junction solar cell. The specific process steps are as follows:
step 1, MOCVD reverse epitaxial growth preparation of GaInP/GaAs double-junction solar cell
(1) Selecting a GaAs substrate, wherein the thickness of the GaAs sheet is 200-400um, and the doping concentration is 1 × 1017-1×1019cm-3(the preferred doping concentration of the invention is 1X 1018cm-3)：
Adopting MOCVD equipment to epitaxially grow a GaAs buffer layer, a GaInP corrosion stop layer, an n-type doped GaAs cap layer, a first-junction GaInP battery serving as a top battery, a tunneling junction, a second-junction GaAs battery serving as a middle battery, a distributed Bragg reflector and a tunneling junction on the GaAs substrate in the step (1) in sequence, wherein the growth temperature is 500-800 ℃;
wherein:
1) the GaAs buffer layer is used as a nucleating layer for growing GaAs-based materials, and the thickness of the GaAs buffer layer is 0.1-0.3 um;
2) the GaInP corrosion stop layer is used as a corrosion control layer for stripping the epitaxial growth substrate, and the thickness is 0.1-0.3 um;
3) an n-type doped GaAs cap layer (not labeled in the figure) is used as a heavily doped epitaxial layer forming ohmic contact with the metal electrode, the thickness is 100-500nm, the doping concentration is 1 × 1018-1×1019cm-3；
4) The first GaInP junction cell serving as the top cell is sequentially grown into a p-type doped AlGaInP back field layer, a p-type doped GaInP base, an n-type doped GaInP emitting region and an n-type doped AlInP window layer;
the thickness of the p-type doped AlGaInP back field layer is 100-200nm, and the doping concentration is 1 x 1017-1×1019cm-3；
The thickness of the p-type doped GaInP base region is 500-1000nm, and the doping concentration is 1 multiplied by 1016-1×1017cm-3；
The thickness of the n-type doped GaInP back field layer is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3；
The thickness of the n-type doped AlInP window layer is 30-100nm, and the doping concentration is 1 multiplied by 1017-1×1019cm-3；
5) An n-type GaInP layer and a p-type AlGaAs layer are sequentially grown on the tunneling junction;
wherein:
the growth temperature of the n-type GaInP layer is 500-800 ℃, and the doping concentration is 1 multiplied by 1018-1×1020cm-3The thickness range is 10-100 nm;
the growth temperature of the p-type AlGaAs layer is 500-800 ℃, and the doping concentration is 1 multiplied by 1018-1×1020cm-3The thickness range is 10-100 nm;
6) the second GaAs cell serving as the middle cell is sequentially grown into a p-type AlGaAs back field layer, a p-type doped GaAs base region, an n-type doped GaAs emitter region and an n-type doped AlGaAs window layer;
wherein:
the thickness of the p-type doped AlGaAs back field layer is 100-200nm, and the doping concentration is 1 × 1017-1×1019cm-3；
The thickness of the p-type doped GaAs base region is 1000-2000nm, and the doping concentration is 1 multiplied by 1016-1×1017cm-3；
The thickness of the n-type doped GaAs back field layer is 50-200nm, and the doping concentration is 1 × 1017-1×1019cm-3；
The thickness of n-type doped AlGaAs window layer is 30-100nm, and the doping concentration is 1 × 1017-1×1019cm-3；
7) A Distributed Bragg Reflector (DBR) alternately grown in sequence to include n-type doped AlGaAs and n-type doped GaInAs with n being more than or equal to 10 and less than or equal to 20 periods;
the thickness of n-type doped AlGaAs and GaInAs is 30-100nm, and the doping concentration is 1 × 1017-1×1019cm-3；
8) Growing an n-type GaAs layer and a p-type AlGaAs layer in sequence by the tunneling junction;
wherein:
the growth temperature of the n-type GaAs layer is 500-800 ℃, and the doping concentration is 1 multiplied by 1018-1×1020cm-3The thickness range is 10-100 nm;
the growth temperature of the p-type AlGaAs layer is 500-800 ℃, and the doping concentration is 1 multiplied by 1018-1×1020cm-3The thickness range is 10-100 nm;
9) step 2, growing and preparing GaInAsN solar cell by MBE
Wherein
The growth temperature of the p-type doped GaAs back field layer is 300-500 ℃, and the doping concentration is 1 multiplied by 1018-1×1020cm-3The thickness range is 100-200 nm;
the growth temperature of the intrinsic GaInAsN absorption layer is 300-500 ℃, and the doping concentration is 1 multiplied by 1015-1×1016cm-3The thickness range is 1-2 μm;
the growth temperature of the n-type doped GaAs emission region is 300-500 ℃, and the doping concentration is 1 multiplied by 1018-1×1020cm-3The thickness range is 100-200 nm;
10) selecting common soda-lime glass, stainless steel foil and other materials as a supporting substrate;
11) growing an Ag, Cu, Au or Ni metal reflecting layer or a multilayer structure consisting of the metals on the substrate;
wherein:
the metal reflecting layer grows by magnetron sputtering, the thickness is 1-2um, and the square resistance is 0.1-0.3 omega/sq;
step 3, bonding the batteries prepared in the steps 1 and 2 with a supporting substrate with a metal reflecting layer on the surface
And (3) carrying out surface treatment on the GaAs back field layer and the metal reflecting layer by a CMP (chemical mechanical polishing) process so as to reduce the surface roughness to be within 1 nm. Carrying out surface activation treatment on the surface of the battery after surface cleaning by using plasma, and attaching the GaInAsN sub-battery and the supporting substrate together by Van der Waals force; a bonding cavity is arranged in the bonding machine and is filled with N2When the temperature of the bonding cavity is raised to 80-120 ℃, preheating the battery for 60-120 seconds; then applying a bonding pressure of 1-5KN, raising the temperature in the bonding cavity to 150-250 ℃ at a temperature rise speed of 15 ℃/min, keeping the temperature constant, bonding for 1-2 hours, and then lowering the temperature in the bonding cavity to room temperature at a temperature drop speed of 3 ℃/min to realize low-temperature bonding;
step 4, stripping the Ge substrate
Etching the GaAs substrate and the GaAs buffer layer by using 1:3 ammonia water and hydrogen peroxide, wherein the Ge substrate and the GaAs buffer layer are etchedAfter the cell is stripped, the cell is stripped with HCl H2Etching the GaInP etching stop layer by using an O1: 1 etching solution, and stripping the GaInP etching stop layer from the cell to complete the stripping of the Ge substrate; and finally, ultrasonically cleaning the cell by using deionized water for 5 minutes and taking out the cell to obtain the GaInP/GaAs/GaInAsN triple-junction cascade solar cell.
Example 2
A method for preparing a reversely grown three-junction solar cell, namely a GaInP/GaAs/GaInAsN three-junction solar cell, uses MOCVD-MBE technology to epitaxially grow a lattice-matched solar cell material on a GaAs or Ge substrate by MOCVD, and comprises two sub-cells: and transferring the prepared device structure to MBE to grow GaInAsN sub-cells, connecting the GaInAsN sub-cells and a support substrate with a metal reflecting layer on the surface through a low-temperature bonding process, and finally completing the stripping of the substrate through chemical etching to obtain the reversely grown triple-junction solar cell. The specific process steps are as follows:
step 1, MOCVD reverse epitaxial growth preparation of GaInP/GaAs double-junction solar cell
(1) Selecting a GaAs substrate with a thickness of 300um and a doping concentration of 1 × 1018cm-3：
Adopting MOCVD equipment to epitaxially grow a GaAs buffer layer, a GaInP corrosion stop layer, an n-type doped GaAs cap layer, a first-junction GaInP battery serving as a top battery, a tunneling junction, a second-junction GaAs battery serving as a middle battery, a distributed Bragg reflector and a tunneling junction on the GaAs substrate in the step (1) in sequence, wherein the growth temperature is 600 ℃;
wherein:
1) the GaAs buffer layer is used as a nucleating layer for growing the GaAs-based material, and the thickness of the GaAs buffer layer is 0.2 um;
2) the GaInP corrosion stop layer is used as a corrosion control layer for stripping the epitaxial growth substrate, and the thickness is 0.2 um;
3) an n-type doped GaAs cap layer (not labeled in the figure) is used as a heavily doped epitaxial layer forming ohmic contact with the metal electrode, the thickness is 300nm, and the doping concentration is 1 multiplied by 1018cm-3；
4) The first GaInP junction cell serving as the top cell is sequentially grown into a p-type doped AlGaInP back field layer, a p-type doped GaInP base, an n-type doped GaInP emitting region and an n-type doped AlInP window layer;
the thickness of the p-type doped AlGaInP back field layer is 100-200nm, and the doping concentration is 1 x 1018cm-3；
The thickness of the p-type doped GaInP base region is 800nm, and the doping concentration is 1 multiplied by 1016cm-3；
The thickness of the n-type doped GaInP back field layer is 100nm, and the doping concentration is 1 multiplied by 1018cm-3；
The thickness of the n-type doped AlInP window layer is 80nm, and the doping concentration is 1 multiplied by 1018cm-3；
5) An n-type GaInP layer and a p-type AlGaAs layer are sequentially grown on the tunneling junction;
wherein:
the growth temperature of the n-type GaInP layer is 600 ℃, and the doping concentration is 1 multiplied by 1019cm-3The thickness range is 80 nm;
the growth temperature of the p-type AlGaAs layer is 500-800 ℃, and the doping concentration is 1 multiplied by 1019cm-3The thickness range is 60 nm;
6) the second GaAs cell serving as the middle cell is sequentially grown into a p-type AlGaAs back field layer, a p-type doped GaAs base region, an n-type doped GaAs emitter region and an n-type doped AlGaAs window layer;
wherein:
the thickness of p-type doped AlGaAs back field layer is 150nm, and the doping concentration is 1 × 1018cm-3；
The thickness of the p-type doped GaAs base region is 1500nm, and the doping concentration is 1 multiplied by 1016cm-3；
The thickness of the n-type doped GaAs back field layer is 100nm, and the doping concentration is 1 × 1018cm-3；
The thickness of the n-type doped AlGaAs window layer is 50nm, and the doping concentration is 1 multiplied by 1018cm-3；
7) A Distributed Bragg Reflector (DBR) alternately grown in sequence to include n-type doped AlGaAs and n-type doped GaInAs with n being more than or equal to 10 and less than or equal to 20 periods;
n-type doped AlGaAs and GThe thickness of aInAs is 70nm, and the doping concentration is 1 multiplied by 1018cm-3；
8) Growing an n-type GaAs layer and a p-type AlGaAs layer in sequence by the tunneling junction;
wherein:
the growth temperature of the n-type GaAs layer is 600 ℃, and the doping concentration is 1 multiplied by 1019cm-3The thickness range is 60 nm;
the growth temperature of the p-type AlGaAs layer is 500-800 ℃, and the doping concentration is 1 multiplied by 1019cm-3The thickness range is 70 nm;
9) step 2, growing and preparing GaInAsN solar cell by MBE
Wherein
The growth temperature of the p-type doped GaAs back field layer is 400 ℃, and the doping concentration is 1 multiplied by 1019cm-3The thickness range is 150 nm;
the growth temperature of the intrinsic GaInAsN absorption layer is 400 ℃, and the doping concentration is 1 multiplied by 1015cm-3The thickness range is 2 mu m;
the growth temperature of the n-type doped GaAs emitter region is 400 ℃, and the doping concentration is 1 multiplied by 1019cm-3The thickness range is 150 nm;
10) selecting common soda-lime glass, stainless steel foil and other materials as a supporting substrate;
11) growing an Ag, Cu, Au or Ni metal reflecting layer or a multilayer structure consisting of the metals on the substrate;
wherein:
the metal reflecting layer grows by adopting magnetron sputtering, the thickness is 2um, and the square resistance is 0.2 omega/sq;
step 3, bonding the batteries prepared in the steps 1 and 2 with a supporting substrate with a metal reflecting layer on the surface
And (3) carrying out surface treatment on the GaAs back field layer and the metal reflecting layer by a CMP (chemical mechanical polishing) process so as to reduce the surface roughness to be within 1 nm. Carrying out surface activation treatment on the surface of the battery after surface cleaning by using plasma, and attaching the GaInAsN sub-battery and the supporting substrate together by Van der Waals force; a bonding cavity is arranged in the bonding machine and is filled with N2When the temperature of the bonding cavity is raised to 100 ℃, the electricity is conductedPreheating the pool for 90 seconds; then applying 3KN bonding pressure, raising the temperature in the bonding cavity to 200 ℃ at the speed of raising the temperature by 15 ℃/min, keeping the temperature constant, bonding for 2 hours, and then lowering the temperature in the bonding cavity to room temperature at the speed of lowering the temperature by 3 ℃/min to realize low-temperature bonding;
step 4, stripping the Ge substrate
Etching the GaAs substrate and the GaAs buffer layer by using 1:3 ammonia water and hydrogen peroxide, and stripping the Ge substrate and the GaAs buffer layer from the cell by using HCl: H2Etching the GaInP etching stop layer by using an O1: 1 etching solution, and stripping the GaInP etching stop layer from the cell to complete the stripping of the Ge substrate; and finally, ultrasonically cleaning the cell by using deionized water for 5 minutes and taking out the cell to obtain the GaInP/GaAs/GaInAsN triple-junction cascade solar cell.
The embodiment has the advantages of excellent battery performance, effective increase of collection efficiency of photon-generated carriers, improvement of photoelectric conversion efficiency of the triple-junction battery, wide application prospect and the like.

Claims (2)

1. A preparation method of a reverse growth triple-junction solar cell is characterized by comprising the following steps: the preparation process of the reversely grown GaInP/GaAs/GaInAsN triple-junction solar cell uses MOCVD-MBE technology to epitaxially grow lattice-matched solar cell material on a GaAs or Ge substrate by MOCVD, and comprises two sub-cells: the method comprises the steps of preparing a GaInP sub-cell and a GaAs sub-cell, transferring the prepared device structure to MBE to grow the GaInAsN sub-cell, connecting the GaInAsN sub-cell with a support substrate with a metal reflecting layer on the surface through a low-temperature bonding process, and finally completing the stripping of the substrate through chemical etching to obtain a reversely grown triple-junction solar cell; the three-junction solar cell structure comprises a GaAs contact layer, a GaInP sub-cell, a first tunneling junction, a GaAs sub-cell, a distributed Bragg reflector, a second tunneling junction and a GaInAsN sub-cell which are sequentially connected;
first junction GaInP subcell: sequentially growing a P-type doped AlGaInP back field layer with the thickness of 100-200nm, a P-type doped GaInP base region with the thickness of 500-1000nm, an n-type doped GaInP emitting region with the thickness of 50-100nm and an n-type doped AlInP window layer with the thickness of 30-100 nm; wherein: of P-type doped AlGaInP back-field layerThe doping concentration is 1 x 1017-1×1019cm-3The doping concentration of the P-type doped GaInP base region is 1 multiplied by 1016-1×1017cm-3The doping concentration of the n-type doped GaInP emitting region is 1 multiplied by 1017-1×1019cm-3The doping concentration of the n-type doped AlInP window layer is 1 multiplied by 1017-1×1019cm-3；
A first tunneling junction: sequentially growing an n-type GaInP layer with the thickness of 10-100nm and p-type Al with the thickness of 10-100nm0.4Ga0.6As: wherein: the doping concentration of the n-type GaInP layer is 1 × 1018-1×1020cm-3P-type Al0.4Ga0.6As doping concentration is 1X 1018-1×1020cm-3；
Second junction GaAs subcell: sequentially growing a P-type doped AlxGa1-xAs back field layer with the thickness of 100-200nm, a P-type doped GaAs base region with the thickness of 1000-2000nm, an n-type doped GaAs emitter region with the thickness of 50-200nm and an n-type doped AlxGa1-xAs window layer with the thickness of 30-100 nm; wherein: the doping concentration of the P-type doped AlxGa1-xAs back field layer is 1 multiplied by 1017-1×1019cm-3The doping concentration of the P-type doped GaAs base region is 1 multiplied by 1016-1×1017cm-3The doping concentration of the n-type doped GaAs emitter region is 1 × 1017-1×1019cm-3The doping concentration of the n-type doped AlxGa1-xAs window layer is 1 multiplied by 1017-1×1019cm-3、0.3≤x≤0.5；
The distributed Bragg reflector is alternately grown into 30-100nm n-type doped AlGaAs and 30-100nm n-type doped GaInAs in sequence, wherein n is more than or equal to 10 and less than or equal to 20 periods; wherein: n-type doping concentration of 1 × 1017-1×1019cm-3；
A second tunneling junction: sequentially growing an n-type GaAs layer with the thickness of 10-100nm and a p-type Al layer with the thickness of 10-100nm0.4Ga0.6As: wherein: the doping concentration of the n-type GaInP layer is 1 × 1018-1×1020cm-3P-type Al0.4Ga0.6As doping concentration is 1X 1018-1×1020cm-3；
Third junction GaInAsN sub-batteries: sequentially growing a P-type doped GaAs back field layer with the thickness of 100-200nm, an intrinsic GaInAsN absorption layer with the thickness of 1-2 mu m and an n-type doped GaAs emission region with the thickness of 50-100 nm; wherein: the doping concentration of the P type doped GaAs back field layer is 1 multiplied by 1017-1×1019cm-3The doping concentration of the intrinsic GaInAsN absorption layer is 1 multiplied by 1015-1×1016cm-3The doping concentration of the n-type doped GaAs emitter region is 1 × 1017-1×1019cm-33。
2. The method of claim 1, wherein the step of forming the triple junction solar cell comprises: the structure of the distributed Bragg reflector is characterized in that two lattice-matched materials with different refractive indexes form a basic unit, a plurality of groups of basic units are repeatedly connected in series, or the thickness of the basic units in the group is linearly and gradually changed; or two groups of distributed Bragg reflectors are used to widen the bandwidth of the reflection spectrum, and the bandwidth of each group of reflection spectrum is determined by the refractive index of the material comprising AlAs/GaAs and AlxGa1-xAs/GaInAs or AlxGa1-xAs/AlAs(0<x<1)。
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