CN207303075U - Ultra-thin stamp-mounting-paper diode - Google Patents
Ultra-thin stamp-mounting-paper diode Download PDFInfo
- Publication number
- CN207303075U CN207303075U CN201721202838.4U CN201721202838U CN207303075U CN 207303075 U CN207303075 U CN 207303075U CN 201721202838 U CN201721202838 U CN 201721202838U CN 207303075 U CN207303075 U CN 207303075U
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- CN
- China
- Prior art keywords
- pin
- welding section
- silicon
- diode
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003466 welding Methods 0.000 claims abstract description 50
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 238000005538 encapsulation Methods 0.000 claims abstract description 17
- 239000003822 epoxy resin Substances 0.000 claims abstract description 15
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 15
- 229910000679 solder Inorganic materials 0.000 claims abstract description 9
- 238000002347 injection Methods 0.000 claims abstract description 5
- 239000007924 injection Substances 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 230000018109 developmental process Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
It the utility model is related to diode field, more particularly to ultra-thin stamp-mounting-paper diode, including ceramic shell, it is opened in the encapsulation groove in ceramic shell center, positioned at the metallic plate of encapsulation trench bottom, silicon, the first pin and second pin in encapsulation groove, further include injection in the epoxy resin for being used to encapsulate silicon, the first pin and second pin in encapsulation groove；First pin includes orthogonal first welding section and first end subsegment, the second pin includes orthogonal second welding section and second end subsegment, first welding section and the second welding section are arranged in parallel and form gap therebetween, the silicon is in the gap between the first welding section and the second welding section, and the two sides of silicon are welded by layer of solder paste and the first welding section and the second welding section.The utility model using effect is stable, service life is long and small, miniaturization that is being conducive to diode.
Description
Technical field
Diode field is the utility model is related to, more particularly to ultra-thin stamp-mounting-paper diode.
Background technology
Stamp-mounting-paper diode is also known as crystal diode, abbreviation diode (diode), in addition, the also vacuum electronic two of early stage
Pole pipe；It is a kind of electronic device with unidirectional conduction electric current.There are two leads of a PN junction inside semiconductor diode
Terminal, this electronic device possess the transducing of unidirectional current according to the direction of applied voltage.In general, surface mounting crystal two
Pole pipe is one and the p-n junction interface formed is sintered by p-type semiconductor and n-type semiconductor.Space electricity is formed in the both sides at its interface
Lotus layer, forms built-in field.When applied voltage is equal to zero, since the concentration difference of p-n junction both sides carrier causes dissufion current
Equal with the drift current as caused by built-in field and be in electric equilibrium state, this is also the diode characteristic under normality.
The demand of surface-mounted diode and development are all very fast, make product small as product circuit plate minimizes
The development trend of type, particularly thin surface-mounted diode development is more rapid, and with the development of photoelectric technology, half
Conductor diode downstream industry enters the cycle of new round rapid development, so as to bring the expansion of diode market demand.But
Be faced with various technical challenges, increasingly fierce market competition drive electronics industry towards smaller it is thinner in terms of send out
Exhibition.
But when diode volume is too small, inner space is small, chip is sent out heat thermogenetic and is easily assembled, and causes diode
Internal chip temperature is excessive and damage so that diode operation is unstable, greatly reduces the service life and surely of diode
It is qualitative.
Utility model content
To solve the above problems, the utility model provides, a kind of using effect is stable, service life is long and small, has
Beneficial to the ultra-thin stamp-mounting-paper diode of the miniaturization of diode.
Technical solution is used by the utility model：Ultra-thin stamp-mounting-paper diode, including ceramic shell, are opened in ceramic case
The encapsulation groove in body center, positioned at the metallic plate of encapsulation trench bottom, silicon, the first pin and second in encapsulation groove draw
Foot, further includes injection in the epoxy resin for being used to encapsulate silicon, the first pin and second pin in encapsulation groove；Described first draws
Foot includes orthogonal first welding section and first end subsegment, the second pin include orthogonal second welding section and
Second end subsegment, first welding section and the second welding section are arranged in parallel and form gap, the silicon position therebetween
In gap between the first welding section and the second welding section, and the two sides of silicon pass through layer of solder paste and the first welding section
Welded with the second welding section, the first end subsegment and second end subsegment through epoxy resin stretch out extraneous and first end subsegment and
Second end subsegment stretches out extraneous equal length.
To being further improved to for above-mentioned technical proposal, the first end subsegment and second end subsegment stretch out extraneous end
In fan shape.
To being further improved to for above-mentioned technical proposal, the ceramic shell left and right ends offer mounting hole respectively, institute
It is counter sink to state mounting hole.
To being further improved to for above-mentioned technical proposal, the radiating copper sheet positioned at the ceramic shell outer surface is further included.
The beneficial effects of the utility model are：
1st, on the one hand, first pass through epoxy resin and silicon, the first pin and second pin are packaged, then pass through ceramics
Housing protects encapsulating structure, and encapsulates trench bottom and be equipped with a metallic plate, and ceramic shell has high temperature resistant, conductivity of heat and electricity
Internal silicon, the first pin and second pin can quickly be worked and produced by the advantages of good insulating, metallic plate and epoxy resin
Heat conduct to ceramic shell, then conduct to outside, prevent that the silicon, the first pin and second pin temperature of inside are excessive
And damage, add the heat dissipation effect of diode so that diode does not have to improve heat dissipation effect by increasing thickness, can reduce
Diode volume, is conducive to the miniaturization of diode, and diode using effect is stable, service life length.Second aspect,
First pin includes orthogonal first welding section and first end subsegment, and the second pin includes the orthogonal second weldering
Connect section and second end subsegment, first welding section and the second welding section are arranged in parallel and form gap, the silicon therebetween
Chip is in the gap between the first welding section and the second welding section, and the two sides of silicon pass through layer of solder paste and first
Welding section and the welding of the second welding section, the first end subsegment and second end subsegment stretch out extraneous and first end through epoxy resin
Subsegment and second end subsegment stretch out extraneous equal length, are welded between silicon and the first pin and second pin by layer of solder paste
Connect, stable connection, and be located at the designs of encapsulating structure both sides relative to the pin of the prior art, the first pin in the utility model
The side of ceramic shell is stretched out with second pin, on the premise of diode behavior is not changed, further reduces diode
Volume, is further conducive to the miniaturization of diode, and the first pin and second pin can be prevented since stress is excessive and
Loosen.
2nd, it is in fan shape that first end subsegment and second end subsegment, which stretch out extraneous end, adds bonding area, easy to the
One end subsegment and second end subsegment and extraneous welding so that diode can firmly access external circuitry, advantageously ensure that two
The stability of pole pipe.
3rd, ceramic shell left and right ends offer mounting hole respectively, and the mounting hole is counter sink, simple in structure, user
Just, the ceramic shell of diode can be fixed on by extraneous mounting portion by sunk screw, enhances diode and connect with external circuit electricity
Point connective stability, advantageously ensures that the stability of diode, sets attachment device or erecting device to realize without extra
Diode is stably connected with extraneous, is further conducive to the miniaturization of diode.
4th, the radiating copper sheet positioned at the ceramic shell outer surface is further included, since copper sheet heat conduction is fast, is radiated by setting
Copper sheet, accelerates heat conduction efficiency, further improves the heat dissipation performance of diode, is further conducive to the miniaturization of diode
Development.
Brief description of the drawings
Fig. 1 is the structure diagram of the utility model.
Embodiment
The utility model is further described below in conjunction with attached drawing.
As shown in Figure 1, the structure diagram for the utility model.
Ultra-thin stamp-mounting-paper diode 100, it is characterised in that：Including ceramic shell 110, the center of ceramic shell 110 is opened in
Groove 111 is encapsulated, the metallic plate 112 positioned at 111 bottom of encapsulation groove, silicon 120, the first pin 130 in encapsulation groove 111
With second pin 140, it is interior for encapsulating silicon 120, the first pin 130 and second pin in encapsulation groove 111 to further include injection
140 epoxy resin 150；First pin 130 includes orthogonal first welding section 131 and first end subsegment 132, institute
Stating second pin 140 includes orthogonal second welding section 141 and second end subsegment 142, first welding section 131 and
Two welding sections 141 are arranged in parallel and form gap therebetween, and the silicon 120 is positioned at the first welding section 131 and the second weldering
Connect in the gap between section 141, and the two sides of silicon 120 pass through 160 and first welding section 131 of layer of solder paste and the second weldering
Connect section 141 to weld, the first end subsegment 132 and second end subsegment 142 stretch out extraneous and the first terminal through epoxy resin 150
Section 132 and second end subsegment 142 stretch out the equal length in the external world.
The end that first end subsegment 132 and second end subsegment 142 stretch out the external world is in fan shape, adds bonding area, just
In first end subsegment 132 and second end subsegment 142 and extraneous welding so that diode 100 can firmly access external circuitry,
Advantageously ensure that the stability of diode 100.
110 left and right ends of ceramic shell offer mounting hole 113 respectively, and the mounting hole 113 is counter sink, and structure is simple
It is single, easy to use, the ceramic shell 110 of diode 100 can be fixed on by extraneous mounting portion by sunk screw, enhance two poles
Pipe 100 and external circuit electric contact connective stability, advantageously ensure that the stability of diode 100, and connection is set without extra
Device or erecting device are further conducive to the miniaturization hair of diode 100 to realize that diode 100 is stably connected with extraneous
Exhibition.
The radiating copper sheet 170 positioned at 110 outer surface of ceramic shell is further included, since copper sheet heat conduction is fast, passes through setting
Radiating copper sheet 170, accelerates heat conduction efficiency, further improves the heat dissipation performance of diode 100, is further conducive to two poles
The miniaturization of pipe 100.
On the one hand, epoxy resin 150 is first passed through to be packaged silicon 120, the first pin 130 and second pin 140,
Encapsulating structure is protected by ceramic shell 110 again, and encapsulates 111 bottom of groove and is equipped with a metallic plate 112, ceramic shell
110 have the advantages that high temperature resistant, conductivity of heat and electrical insulating property are good, and metallic plate 112 and epoxy resin 150 can be quickly by internal silicon cores
The heat that piece 120, the first pin 130 and the work of second pin 140 produce is conducted to ceramic shell 110, then is conducted to outside, is prevented
Only internal silicon 120, the first pin 130 and 140 temperature of second pin are excessive and damage, add the scattered of diode 100
Thermal effect so that diode 100 does not have to improve heat dissipation effect by increasing thickness, can reduce 100 volume of diode, be conducive to
The miniaturization of diode 100, and 100 using effect of diode is stable, service life length.Second aspect, the first pin 130
Including orthogonal first welding section 131 and first end subsegment 132, the second pin 140 includes orthogonal second
Welding section 141 and second end subsegment 142,131 and second welding section 141 of the first welding section is arranged in parallel and shape therebetween
Into gap, the silicon 120 is in the gap between the first welding section 131 and the second welding section 141, and silicon 120
Two sides welded by layer of solder paste 160 and the first welding section 131 and the second welding section 141,132 He of first end subsegment
Second end subsegment 142 stretches out extraneous and first end subsegment 132 and second end subsegment 142 through epoxy resin 150 and stretches out the external world
Equal length, is welded, stable connection between 120 and first pin 130 of silicon and second pin 140 by layer of solder paste 160, and
It is located at the design of encapsulating structure both sides relative to the pin of the prior art, the first pin 130 and second pin in the utility model
140 stretch out the side of ceramic shell 110, on the premise of 100 performance of diode is not changed, further reduce diode 100
Volume, be further conducive to the miniaturization of diode 100, and can prevent the first pin 130 and second pin 140 due to
Stress is excessive and loosens.
The operation principle of the utility model is：
Layer of solder paste 160 is first passed through by the first welding section 131 of the first pin 130 and the second welding section of second pin 140
141 are welded on 120 both sides of silicon, and the first pin 130, second pin 140 and silicon 120 then are arranged at ceramic case again
On the metallic plate 112 in encapsulation groove 111 in body 110, ensure the first end subsegment 132 and second pin 140 of the first pin 130
Second end subsegment 142 end stretch out encapsulation groove 111 open side, to encapsulation groove 111 in injection epoxy resin 150 sealed
Dress, finally installs radiating copper sheet 170 in 110 outer surface of ceramic shell, obtains the ultra-thin stamp-mounting-paper diode 100 of the utility model.
In use, the first pin is realized by the fan shape structure of 142 end of first end subsegment 132 and second end subsegment
130 and the welding of second pin 140 and external circuitry, being fastenedly connected for ceramic shell 110 and the external world is realized by sunk screw.
In the course of work, the heat of internal silicon 120 work generation, is first transferred to epoxy resin 150, then be transferred to
Ceramic shell 110, then radiating copper sheet 170 is transferred to, external environment is conducted heat to through radiating copper sheet 170, prevents internal temperature
Spend high and cause 100 aging of diode.
Embodiment described above only expresses the several embodiments of the utility model, its description is more specific and detailed,
But it should not be interpreted as limiting the scope of the present invention.It should be pointed out that for the common of this area
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In the scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (4)
1. ultra-thin stamp-mounting-paper diode, it is characterised in that：Including ceramic shell, the encapsulation groove in ceramic shell center is opened in, is located at
The metallic plate of trench bottom is encapsulated, silicon, the first pin and second pin in encapsulation groove, further include injection in encapsulation groove
The interior epoxy resin for being used to encapsulate silicon, the first pin and second pin；First pin includes orthogonal first
Welding section and first end subsegment, the second pin include orthogonal second welding section and second end subsegment, and described first
Welding section and the second welding section are arranged in parallel and form gap therebetween, and the silicon is located at the first welding section and the second weldering
Connect in the gap between section, and the two sides of silicon are welded by layer of solder paste and the first welding section and the second welding section, institute
State first end subsegment and second end subsegment and stretch out extraneous and first end subsegment and the second end subsegment stretching external world through epoxy resin
Equal length.
2. ultra-thin stamp-mounting-paper diode according to claim 1, it is characterised in that：The first end subsegment and second end subsegment
It is in fan shape to stretch out extraneous end.
3. ultra-thin stamp-mounting-paper diode according to claim 2, it is characterised in that：Open respectively the ceramic shell left and right ends
Equipped with mounting hole, the mounting hole is counter sink.
4. ultra-thin stamp-mounting-paper diode according to claim 3, it is characterised in that：Further include and be located at the ceramic shell appearance
The radiating copper sheet in face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721202838.4U CN207303075U (en) | 2017-09-18 | 2017-09-18 | Ultra-thin stamp-mounting-paper diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721202838.4U CN207303075U (en) | 2017-09-18 | 2017-09-18 | Ultra-thin stamp-mounting-paper diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207303075U true CN207303075U (en) | 2018-05-01 |
Family
ID=62441793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721202838.4U Expired - Fee Related CN207303075U (en) | 2017-09-18 | 2017-09-18 | Ultra-thin stamp-mounting-paper diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207303075U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885787A (en) * | 2021-01-25 | 2021-06-01 | 互创(东莞)电子科技有限公司 | Surface mount diode and packaging forming process thereof |
-
2017
- 2017-09-18 CN CN201721202838.4U patent/CN207303075U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885787A (en) * | 2021-01-25 | 2021-06-01 | 互创(东莞)电子科技有限公司 | Surface mount diode and packaging forming process thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 523000 Dongguan, Guangdong, Songshan Lake high tech Industrial Development Zone, New Town Road, 5, hung Ho, 7 A, Long Yi Zhi Valley, A701 Patentee after: DONGGUAN NANJING ELECTRONICS LTD. Address before: 523000 Yi Hongrong high tech Industrial Park, No. 7, Chi Ling Industrial Road, Houjie Town, Dongguan, Guangdong. Patentee before: DONGGUAN NANJING ELECTRONICS LTD. |
|
| CP02 | Change in the address of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180501 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |