CN207116442U - A kind of HIBC batteries - Google Patents
A kind of HIBC batteries Download PDFInfo
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- CN207116442U CN207116442U CN201720879107.7U CN201720879107U CN207116442U CN 207116442 U CN207116442 U CN 207116442U CN 201720879107 U CN201720879107 U CN 201720879107U CN 207116442 U CN207116442 U CN 207116442U
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- amorphous silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of HIBC batteries, the HIBC batteries include silicon substrate, electrode and the first intrinsic amorphous silicon layer and doped amorphous silicon layer being successively set on the back surface of the silicon substrate, the electrode is connected with the doped amorphous silicon layer, and hydrogenated amorphous silicon oxide layer is provided between the silicon substrate and first intrinsic amorphous silicon layer.The utility model between the silicon substrate of the HIBC batteries and the first intrinsic amorphous silicon layer by setting above-mentioned hydrogenated amorphous silicon oxide layer, improve the interface passivation effect of the HIBC batteries, the series resistance increase and fill factor, curve factor for having contained the HIBC batteries caused by due to introducing intrinsic amorphous silicon layer reduce, and improve the photoelectric transformation efficiency of the HIBC batteries.
Description
Technical field
Solar-photovoltaic technology field is the utility model is related to, especially a kind of HIBC batteries.
Background technology
Important target is to produce the photovoltaic cell for realizing higher efficiency in current field of photovoltaic technology, especially with different
Matter junction battery (Heterojunction with Intrinsic Thin layer Cell, HIT battery) and back contact battery
(Interdigitated back contact, IBC battery) is paid close attention to for the high-efficiency battery of representative as enterprise and research institution
Focus.Although there is production equipment costliness, realize what the needs such as scale of mass production is difficult and process meanses are relative complex solved
Problem, but due to possessing superior electrical performance, both high-efficiency batteries still become industry heat and hold in both hands object.And occur in recent years
With the HIBC of HIT batteries and IBC battery good characteristics (Heterojunction Interdigitated Back
Contact) battery is paid attention to and studied by some research institutions and enterprise.
The structure of HIBC batteries commonly used in the prior art include silicon substrate, intrinsic amorphous silicon layer, doped amorphous silicon layer with
And electrode, the intrinsic amorphous silicon layer and doped amorphous silicon layer are set gradually on a silicon substrate, the electrode is connected to doped amorphous silicon
Layer.And the structure of the HIBC batteries has the disadvantages that：Doped amorphous silicon layer can make the Si -- H bond in intrinsic amorphous silicon layer fission
Ability reduces, and makes the increase of the defects of intrinsic amorphous silicon layer, and passivation ability declines；The introducing of intrinsic amorphous silicon layer causes the HIBC
The series resistance increase of battery, fill factor, curve factor decline；Using plasma enhancing chemical vapor deposition method (Plasma
Enhanced Chemical VaporDeposition, PECVD) deposition intrinsic amorphous silicon layer when can produce epitaxial silicon, so as to damage
The interface performance of evil intrinsic amorphous silicon layer and silicon substrate so that passivation ability declines, so that the photoelectricity of the HIBC batteries turns
Change efficiency decline.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of HIBC batteries, passes through the silicon in the HIBC batteries
Substrate and be arranged on the silicon substrate back surface side the first intrinsic amorphous silicon layer between set one layer of hydrogenated amorphous oxygen
SiClx layer, to solve the above problems.
To achieve these goals, the utility model takes following technical scheme：
A kind of HIBC batteries, including silicon substrate, electrode and the first being successively set on the back surface of the silicon substrate
Sign amorphous silicon layer and doped amorphous silicon layer, the electrode are connected with the doped amorphous silicon layer, the silicon substrate and described the
Hydrogenated amorphous silicon oxide layer is provided between one intrinsic amorphous silicon layer.
Preferably, the HIBC batteries also include the second intrinsic amorphous silicon layer, N-type non-crystalline silicon layer and antireflection film layer,
Second intrinsic amorphous silicon layer, N-type non-crystalline silicon layer and the antireflection film layer are successively set on the front surface of the silicon substrate.
Preferably, the antireflection film layer is silicon nitride film.
Preferably, the HIBC batteries also include the transparent conductive film layer being arranged on the doped amorphous silicon layer, described
Electrode is connected by the transparent conductive film layer with the doped amorphous silicon layer.
Preferably, the doped amorphous silicon layer includes N-type amorphous silicon region and P-type non-crystalline silicon area, and the electrode passes through described
Transparent conductive film layer collects the N-type amorphous silicon region and the electric current in P-type non-crystalline silicon area respectively.
Preferably, the N-type amorphous silicon region and the P-type non-crystalline silicon area are arranged as in first intrinsic amorphous silicon layer
Interdigital PN junction.
Preferably, the thickness of the hydrogenated amorphous silicon oxide layer is 1~10nm.
Preferably, the silicon substrate is n type single crystal silicon substrate.
A kind of HIBC batteries that the utility model embodiment provides, pass through the silicon substrate and first in the HIBC batteries
One layer of hydrogenated amorphous silicon oxide layer is set between sign amorphous silicon layer, improves the interface passivation effect of the HIBC batteries, containment
The series resistance increase of the HIBC batteries caused by due to introducing intrinsic amorphous silicon layer and fill factor, curve factor reduce, and improve
The photoelectric transformation efficiency of the HIBC batteries.
Brief description of the drawings
Fig. 1 is the structural representation for the HIBC batteries that the utility model embodiment provides；
Fig. 2 a- Fig. 2 e be HIBC batteries that the utility model embodiment provides in its preparation method, each step obtains
Structure graphical representation of exemplary.
Embodiment
To make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with the accompanying drawings to the utility model
Embodiment be described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Institute in accompanying drawing
Show what is be merely exemplary with the embodiment of the present utility model described with reference to the accompanying drawings, and the utility model is not limited to this
A little embodiments.
Here, it should also be noted that, in order to avoid having obscured the utility model because of unnecessary details, in the accompanying drawings
It illustrate only and according to scheme of the present utility model closely related structure and/or processing step, and eliminate and this practicality
The little other details of new relationship.
HIBC batteries (Heterojunction Interdigitated Back Contact batteries, hetero-junctions back contacts
Coupling battery) be combined with HIT batteries and IBC batteries good characteristic battery, it is formed by the back side in silicon chip substrate
The intrinsic layer of one layer of amorphous, and form amorphous p type island region and amorphous N-type region with intersecting on the intrinsic layer of amorphous, form interdigital
PN junction, then the structure of HIBC batteries is formed, HIBC batteries are just from extraction electrode at amorphous p type island region and amorphous N-type region respectively
Face does not have any electrode and bus.
As shown in fig.1, the utility model embodiment provides a kind of HIBC batteries, it includes silicon substrate 1, the and of electrode 5
The first intrinsic amorphous silicon layer 3 and the doped amorphous silicon layer 4 being successively set on the back surface of the silicon substrate 1, the electrode 5
It is connected, is provided between the silicon substrate 1 and first intrinsic amorphous silicon layer 3 hydrogenated amorphous with the doped amorphous silicon layer 4
Silicon oxide layer 2.Wherein, the doped amorphous silicon layer 4 includes N-type non-crystalline silicon (N-a-Si：H) area 41 and P-type non-crystalline silicon (P-a-
Si：H) area 42, the N-type amorphous silicon region 41 and P-type non-crystalline silicon area 42 are arranged alternately with each other in first intrinsic amorphous silicon layer 3
On.
In the present embodiment, the HIBC batteries set one between the intrinsic amorphous silicon layer 3 of silicon substrate 1 and first
The hydrogenated amorphous silicon oxide layer 2 of layer, it is intrinsic non-less than described first using the surface defect density of the hydrogenated amorphous silicon oxide layer 2
The defects of crystal silicon layer 3 density, improve the interface passivation effect of the back surface side of the HIBC batteries, contained due to introducing
Intrinsic amorphous silicon (i-a-Si：H) the series resistance increase of the HIBC batteries caused by layer and fill factor, curve factor reduce, and improve
The open-circuit voltage of the HIBC batteries, so as to improve the photoelectric transformation efficiency of the HIBC batteries.Additionally, due to the hydrogenation
Amorphous silica (a-SiOx：H energy gap) is wider compared to the energy gap of intrinsic amorphous silicon, adds emitter stage and that is to say
The potential barrier between PN junction and front-surface field and the silicon substrate 1 in the doped amorphous silicon layer 4 so that electronics is to emitter stage
Because potential barrier increase is shot back during flowing, same hole, which is supported or opposed when electric field transmits, to be also shot back, and is dramatically reduced described
The leakage current of HIBC batteries；And the hydrogenated amorphous silicon oxide layer 2 can show tunneling effect in specific thickness (at this
In embodiment, exemplarily, the thickness of the hydrogenated amorphous silicon oxide layer 2 is 1~10nm), make electronics and hole substantially not by
Stop ground flow direction back of the body electric field and emitter stage respectively, so as to increase the effective current of the HIBC batteries, so as to further improve
The photoelectric transformation efficiencies of the HIBC batteries.
Specifically, the HIBC batteries also include the second intrinsic amorphous silicon layer 6, N-type non-crystalline silicon layer 7 and antireflection film layer
8, second intrinsic amorphous silicon layer 6, N-type non-crystalline silicon layer 7 and antireflection film layer 8 are being successively set on the silicon substrate 1 just
On surface.
In the present embodiment, exemplarily, first intrinsic amorphous silicon layer 3, the second intrinsic amorphous silicon layer 6 and N-type
The thickness of amorphous silicon layer 7 is arranged to 5~10nm.
In the present embodiment, the antireflection film layer 8 is silicon nitride (SiNx) film, the thickness of the antireflection film layer 8
It is arranged to 5~10nm.Because light direct irradiation is on the silicon substrate 1, there is a large portion light to be damaged because of by reflection
Lose, and the antireflection film layer 8 that the HIBC batteries are set can utilize film interference principle, obtain good antireflective effect
Fruit, reduce the loss of light.
Further, the HIBC batteries also include the nesa coating (TCO) being arranged on the doped amorphous silicon layer 4
Layer 9, the electrode 5 is connected by the transparent conductive film layer 9 with the doped amorphous silicon layer 4, for collecting the N-type respectively
Amorphous silicon region 41 and the electric current in P-type non-crystalline silicon area 42.
The HIBC batteries by setting the transparent conductive film layer 9, can be better achieved the N-type amorphous silicon region 41 with
And the electric current export in P-type non-crystalline silicon area 42, keep the doped amorphous silicon layer 4 and the good electrical of the electrode 5 to contact, simultaneously
The electrode 5 is allowd to be made as the electrode of smaller width, in the present embodiment, exemplarily, the width of the electrode 5 is
35~55 μm.And after setting the transparent conductive film layer 9 to be packaged the HIBC batteries, no matter it is just faced
Light or the back side advantageously reduce production cost, lift the opto-electronic conversion of the HIBC batteries towards can carry out opto-electronic conversion during light
Efficiency.
In the present embodiment, the silicon substrate 1 is n type single crystal silicon (n-c-Si) substrate.Thus, the utility model embodiment
The above-mentioned HIBC batteries provided are the HIBC batteries based on SiNx/n+/i/n-c-Si/i/p+, n+/TCO/ electrode structure, and
The structure of one layer of hydrogenated amorphous silicon oxide layer 2 is set between the back surface of the silicon substrate 1 and the first intrinsic amorphous silicon layer 3.
Refering to shown in Fig. 2 a- Fig. 2 e, a kind of HIBC batteries that the utility model embodiment provides can be by following preparation method
Prepared, the preparation method includes step：
S1, as shown in Figure 2 a, there is provided a silicon substrate 1, by plasma enhanced chemical vapor deposition technique in the silicon
One layer of hydrogenated amorphous silicon oxide layer 2 is deposited on the back surface of substrate 1.
Exemplarily, in above-mentioned steps S1, the hydrogenated amorphous silicon oxide layer that is deposited on the back surface of the silicon substrate 1
2 thickness are 1~10nm.
S2, as shown in Figure 2 b, by plasma enhanced chemical vapor deposition technique in the hydrogenated amorphous silicon oxide layer 2
One layer of first intrinsic amorphous silicon layer 3 of upper deposition.
S3, with reference to shown in Fig. 2 c and 2d, the preboarding in first intrinsic amorphous silicon layer 3 is blocked using hard mask technique
Into the region of N-type amorphous silicon region 41, by plasma enhanced chemical vapor deposition technique in first intrinsic amorphous silicon layer 3
Upper deposition P-type non-crystalline silicon area 42.
Further, in above-mentioned steps S3, sunk on the front surface of the silicon substrate 1 by PECVD
Product one layer of second intrinsic amorphous silicon layer 6 of process deposits.
S4, as shown in Figure 2 d, the P-type non-crystalline silicon in first intrinsic amorphous silicon layer 3 is blocked using hard mask technique
Area 42, by plasma enhanced chemical vapor deposition technique in first intrinsic amorphous silicon layer 3 deposited n-type amorphous silicon region
41, the N-type amorphous silicon region 41 and P-type non-crystalline silicon area 42 is arranged as interdigital PN junction, form doped amorphous silicon layer 4.
Further, in above-mentioned steps S4, PECVD is passed through in second intrinsic amorphous silicon layer 6
Depositing operation deposits one layer of N-type non-crystalline silicon layer 7, passes through plasma enhanced chemical vapor deposition work in the N-type non-crystalline silicon layer 7
Skill deposits one layer of antireflection film layer 8.
S5, as shown in Figure 2 e, 5 are printed electrode using silk-screen printing technique or electroplating technology, respectively by the N-type non-crystalline silicon
The electric current in area 41 and P-type non-crystalline silicon area 42 is drawn.
Further, in above-mentioned steps S5, using physical gas-phase deposition or reaction etc. on the doped amorphous silicon layer 4
Plasma deposition process deposits layer of transparent conductive film layer 9, the electrode 5 is printed on the transparent conductive film layer 9, is made described
Electrode 5 is connected by the transparent conductive film layer 9 with the doped amorphous silicon layer 4, with respectively by the N-type amorphous silicon region 41 with
And the electric current in P-type non-crystalline silicon area 42 is drawn.
Plasma enhanced chemical vapor deposition technique in above-mentioned preparation method was made by the methods of microwave or radio frequency
Gas ionization containing film composed atom, plasma is being partially formed, is easily being sent out by force by plasma chemistry activity
The characteristic of raw reaction, the technique that the film of needs is gone out in deposition on substrate, is deposition of layers knot in technical field of solar batteries
The conventional process means of structure.
In summary, a kind of HIBC batteries that the utility model embodiment provides, served as a contrast by the silicon in the HIBC batteries
One layer of hydrogenated amorphous silicon oxide layer 2 is set between the intrinsic amorphous silicon layer 3 of bottom 1 and first, improves the interface of the HIBC batteries
Passivation effect, contained due to introduce intrinsic amorphous silicon layer caused by the HIBC batteries series resistance increase and fill because
Son reduces, and improves the photoelectric transformation efficiency of the HIBC batteries.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply and deposited between these entities or operation
In any this actual relation or order.Term " comprising ", "comprising" or its any other variant are intended to non-row
His property includes, so that process, method, article or equipment including a series of elements not only include those key elements, and
And also include the other element being not expressly set out, or also include for this process, method, article or equipment institute inherently
Key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that including institute
State in process, method, article or the equipment of key element and other identical element also be present.
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, for these changes and profit
Decorations, also should be regarded as the protection domain of the application.
Claims (8)
1. a kind of HIBC batteries, including silicon substrate (1), electrode (5) and it is successively set on the back surface of the silicon substrate (1)
First intrinsic amorphous silicon layer (3) and doped amorphous silicon layer (4), the electrode (5) are connected with the doped amorphous silicon layer (4),
Characterized in that, it is provided with hydrogenated amorphous silicon oxide layer between the silicon substrate (1) and first intrinsic amorphous silicon layer (3)
(2)。
2. HIBC batteries according to claim 1, it is characterised in that the HIBC batteries also include the second intrinsic amorphous silicon
Layer (6), N-type non-crystalline silicon layer (7) and antireflection film layer (8), second intrinsic amorphous silicon layer (6), N-type non-crystalline silicon layer (7)
And antireflection film layer (8) is successively set on the front surface of the silicon substrate (1).
3. HIBC batteries according to claim 2, it is characterised in that the antireflection film layer (8) is silicon nitride film.
4. according to any described HIBC batteries of claim 1-3, it is characterised in that the HIBC batteries also include being arranged on institute
State the transparent conductive film layer (9) on doped amorphous silicon layer (4), the electrode (5) by the transparent conductive film layer (9) with it is described
Doped amorphous silicon layer (4) connects.
5. HIBC batteries according to claim 4, it is characterised in that the doped amorphous silicon layer (4) includes N-type amorphous silicon region
(41) and P-type non-crystalline silicon area (42), the electrode (5) collect the N-type non-crystalline silicon respectively by the transparent conductive film layer (9)
Area (41) and the electric current of P-type non-crystalline silicon area (42).
6. HIBC batteries according to claim 5, it is characterised in that the N-type amorphous silicon region (41) and the p-type amorphous
Silicon area (42) is arranged as interdigital PN junction on first intrinsic amorphous silicon layer (3).
7. HIBC batteries according to claim 1, it is characterised in that the thickness of the hydrogenated amorphous silicon oxide layer (2) is 1
~10nm.
8. HIBC batteries according to claim 1, it is characterised in that the silicon substrate (1) is n type single crystal silicon substrate.
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| CN201720879107.7U CN207116442U (en) | 2017-07-19 | 2017-07-19 | A kind of HIBC batteries |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107342333A (en) * | 2017-07-19 | 2017-11-10 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of HIBC batteries and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342333A (en) * | 2017-07-19 | 2017-11-10 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of HIBC batteries and preparation method thereof |
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