CN105789342B - A kind of metal oxide multilayer film back contacts crystal-silicon solar cell and preparation method thereof - Google Patents
A kind of metal oxide multilayer film back contacts crystal-silicon solar cell and preparation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 3
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 239000002184 metal Substances 0.000 claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000002161 passivation Methods 0.000 claims abstract description 37
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000010953 base metal Substances 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims description 140
- 238000002207 thermal evaporation Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 3
- 239000002360 explosive Substances 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 231100000614 poison Toxicity 0.000 abstract 1
- 230000007096 poisonous effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a kind of metal oxide multilayer film back contacts crystal-silicon solar cell, including crystal silicon chip, the preceding surface of the crystal silicon chip and back surface are provided with passivation layer, back surface passivation layer is provided with emitter stage, emitter metal electrode and base metal electrode, and emitter stage is made up of the first sull, metallic film and the second sull；Wherein the first sull or the second sull are WO3Film, NiO films or V2O5Film, metallic film are Ag films, Au films, Pd films, Cu films, Ni films, Mo films, W film or Al films；The preceding surface of the battery is blocked without metal grid lines, and raw material are environment-friendly without inflammable, explosive, poisonous material；Whole preparation process does not need the technological process of the expensive equipment such as photoetching, laser and complexity, and without high temperature, processing step is simple, is adapted to large-scale production；Transparent conductive film need not be used, cost is cheap, has broad application prospects.
Description
Technical field
The invention belongs to technical field of solar cells, and in particular to a kind of oxide-metal multilayer film back contacts crystalline silicon
Solar cell and preparation method thereof.
Background technology
The most common structure type of solar cell is the p-n junction type of inorganic material system, can be divided into according to the material similarities and differences
Homojunction and hetero-junctions.Heterojunction solar battery can avoid high-temperature diffusion process, prepare film and silicon substrate shape at low temperature
Into p-n junction.Current commercialized silicon substrate heterojunction solar cell mainly includes a-Si:H/c-Si heterojunction solar batteries
(Heterojunction with intrinsic Thin layer, HIT) and interdigital structure silicon based hetero-junction
(Interdigitated back contact silicon heterojunction, IBC-SHJ) solar cell.
The preceding surface of IBC-SHJ solar cells uses the semi-conducting material of larger band system as antireflective film and passivating film, to subtract
The reflection of few light and parasitics absorb, therefore have higher current density than HIT solar cell.But the IBC-SHJ sun is electric
Pond presently, there are problems with：First, equipment is expensive, and raw material silane belongs to inflammable and explosive chemical substance.2nd, need multiple
Miscellaneous mask and accurately technique of counterpoint, such as：Photoetching, laser ablation etc., prevent battery emitter stage is connected with base from causing electricity
Pond short circuit.3rd, the transparent conductive films such as ITO and low temperature silver paste, cost height, it is difficult to largely produced are needed to use.Therefore visit
Rope new material, new construction, new preparation process, simplify processing step, reduce the requirement to equipment and be adapted to large-scale production, obtain
Efficient novel heterojunction solar cell, has great importance.
WO in recent years3, NiO, V2O5Deng transition metal oxide material, because work function is high, band gap is wide, light parasitics
Absorbing the advantages that small is widely used in opto-electronic device, such as：Organic Light Emitting Diode (OLED), organic photovoltaic cell
(OPV).However, transition metal oxide belongs to insulating materials, resistivity is higher.In order to improve the electrology characteristic of film, and
Can low temperature preparation, can be realized by inserting layer of metal layer in sull, form oxide/metal/oxidation
Thing multi-layer film structure, such as WO3/Ag/WO3、NiO/Ag/NiO、V2O5/Ag/V2O5Deng.The structure of this multilayer film has as follows
Feature：First, relatively low surface square resistance is possessed；2nd, excellent optical property, oxide/metal/oxide composite structure
Film is acted on by the plasmon coupling between metal level and oxide skin(coating), adds the transmitance in visible-range, energy
Enough reflections for effectively preventing metal level；3rd, higher work function.
In patent CN 104916709A, metallized multilayer film is combined with silicon materials, has the silicon chip of passivation layer in deposition
Front deposition oxide/metal/oxide multilayer film, prepare the oxide-metal multilayer film with preceding knot/silicon substrate sun electricity
Pond.But oxide-metal multilayer film/silica-based solar cell of preceding knot has the disadvantages that：(1) contain in the emitter stage of battery
Layer of metal film, due to reflection and absorption of the metal film to light, the photogenerated current of battery can be greatly reduced；(2) preceding surface
Metal electrode and emitter stage only partly contact (~8%), and series resistance is big, and fill factor, curve factor is relatively low.
The content of the invention
First technical problem to be solved by this invention is to provide a kind of oxide-metal multilayer film back contacts crystalline silicon
Solar cell, the solar cell is using oxide-metal multilayer film as emitter stage and is arranged at the back side of crystal silicon chip, efficiency
Height, traditional thermal diffusion, ion implanting or plasma enhanced chemical vapor deposition (PECVD) can be avoided to prepare amorphous
Silicon absorbs as parasitics caused by emitter stage, auger recombination and the problems such as " dead layer ".
Second technical problem to be solved by this invention is to provide above-mentioned oxide-metal multilayer film back contacts crystalline silicon
The preparation technology of solar cell, this method production process is few, and whole preparation process is adapted to large-scale production without high temperature.
First technical problem of the present invention is achieved through the following technical solutions：A kind of oxide-metal multilayer
Film back contacts crystal-silicon solar cell, including crystal silicon chip, the preceding surface of the crystal silicon chip and back surface are provided with passivation layer, institute
State back surface passivation layer and be provided with emitter stage, emitter metal electrode and base metal electrode, the emitter stage is by the first oxidation
Thing film, metallic film and the second sull composition；Wherein the first sull or the second sull are WO3It is thin
Film, NiO films or V2O5Film, the metallic film are Ag films, Au films, Pd films, Cu films, Ni films, Mo films, W
Film or Al films.
The present invention combines to form oxidation by regarding oxide-metal multilayer film as emitter stage with silicon chip or silicon thin film
Thing-metallized multilayer film silicon substrate rear-face contact solar cell, the light absorbing layer of battery is mainly silicon, shows no metal grid lines before battery
Block, there is oxide-metal multilayer film higher work function silicon face band curvature can be induced to produce space-charge region, carry
Stream collects the effect with transmission, and whole preparation technology is in the state of low temperature, and equipment is simple, and cost is relatively low, environment-friendly.
Compared to commercialized silicon based hetero-junction back contacts solar cell, oxide-metal multilayer film back contacts crystalline silicon
Solar cell has the advantage that：First, it is inexpensive, due to using low temperature process, it is not necessary to the expensive device such as photoetching, laser, be not required to
Transparent conductive film and low temperature silver paste are wanted, so as to reduce cost；2nd, processing step is simple, it is only necessary to metal screen printing plate mask twice, nothing
It is commercialized the complicated technological process of back contact battery.Therefore, the sun electricity of oxide-metal multilayer film silicon substrate rear-face contact structure
Pond has broader prospect at practical aspect.
Compared to preceding knot oxide-metal multilayer film/silica-based solar cell, oxide-metal multilayer film back contacts crystal
Silicon solar cell has the advantage that：(1) layer of metal film is contained in the emitter stage of battery, due to reflection and suction of the metal film to light
Receive, the photogenerated current of battery can be greatly reduced, and the battery emitter stage of back contact structure is overleaf, and photogenerated current will not be made
Into loss；(2) metal electrode on preceding surface and emitter stage only partly contact (~8%), compared to back contact battery (metal electrode
All contacted with emitter stage) there is bigger series resistance, cause fill factor, curve factor relatively low；(3) high efficiency, due to completely eliminating just
The shading loss of face gate line electrode, so as to improve the efficiency of battery；(4) it is, inexpensive, due to using low temperature process, electricity can be achieved
The sheet in pond, so as to reduce cost；Therefore, the solar cell of oxide-metal multilayer film silicon substrate rear-face contact structure is in reality
There is broader prospect with change aspect.
The thickness of first sull of the present invention is preferably 5~30nm, and the thickness of the metallic film is preferably 2
~20nm, the thickness of second sull is preferably 5~80nm.
First sull and the second sull of the present invention are preferably steamed using resistance-type thermal evaporation, electron beam
Hair or magnetron sputtering method are made；The metallic film is preferably made using resistance-type thermal evaporation evaporation.
Crystal silicon chip of the present invention is preferably monocrystalline silicon piece, polysilicon chip or silicon thin film, monocrystalline silicon piece or polysilicon chip
Preferably p-type or N-type.
Gap is provided between emitter metal electrode of the present invention and the base metal electrode.
The preceding surface passivation layer of crystal silicon chip of the present invention is provided with antireflection film.
Second technical problem of the present invention is achieved through the following technical solutions：Above-mentioned back-contact oxide-
Metallized multilayer film/silica-based solar cell preparation method, comprises the following steps：
(1) crystal silicon chip is chosen, after cleaning, in the preceding surface of crystal silicon chip and back surface deposit passivation layer；
(2) mask plate being adapted with base metal electrode figure is set to cover base metal electricity at the crystal silicon chip back side
Pole, the depositing first oxide film in back surface deposit passivation layer, the deposited metal film on the first sull, in gold
Belong to depositing second oxide film on film, form emitter stage；
(3) emitter metal electrode is set on the second sull；
(4) mask plate being adapted with emitter pattern is set to cover emitter stage at the crystal silicon chip back side, it is blunt in back surface
Change and base metal electrode is set on layer, that is, oxide-metal multilayer film back contacts crystal-silicon solar cell is made.
In the back-contact oxide-metal multilayer film/silica-based solar cell preparation method：
Cleaning is preferably cleaned using RCA techniques in step (1).
Passivation layer is preferably SiO described in step (1)2、TiO2、(i)a-Si:H、Al2O3Or SiNx, its thickness be 1~
15nm, it is preferred to use thermal oxide, PECVD, ald or magnetron sputtering method are made.
Antireflection film is provided with step (1) on the preceding surface passivation layer of crystal silicon chip, described antireflective coating is preferred
For MgF2、SiNx、TiO2, its thickness is 5~300nm, it is preferred to use resistance-type thermal evaporation, PECVD, ald or magnetic control
Sputtering method is made.
Emitter metal electricity is preferably prepared using silk screen print method or mask half tone resistance-type thermal evaporation in step (3)
Pole.
Base metal electrode is preferably the metal gate prepared using silk screen print method or resistance-type thermal evaporation in step (4)
Line, 0.1~1mm of width of the metal grid lines, it is highly 1~10 μm.
Compared with prior art, the invention has the advantages that：
(1) oxide-metal multilayer film is deposited on silicon substrate bottom back side by physical deposition methods (PVD) and is used as hair by the present invention
Emitter-base bandgap grading, the full rear-face contact of electrode is realized, there is no document and patent report, be a kind of silica-based solar cell of brand new；
(2) present invention can effectively reduce highly doped cause by the use of oxide-metal multilayer film as the emitter stage of battery
Auger recombination and " dead layer ", can reduce compound, strengthen the short wave response of solar cell, improve the short circuit current of battery；
(3) present invention is carried out blunt by passivation layer to oxide-metal multilayer film with silicon chip or silicon thin film contact interface
Change, defect state can be reduced, improve the open-circuit voltage of battery；
(4) in battery whole preparation process of the present invention, without pyroprocess, high-efficiency battery can be prepared at low temperature；
(5) compared with the solar cells such as HIT, IBC-SHJ, made in the present invention using oxide-metal-oxide multilayered film
For the emitter stage of battery, having that preparation technology is succinct, device performance is good, equipment is simple, and cost is cheap, the advantages of energy-conserving and environment-protective,
And it is adapted to large-scale production；
(6) oxide-metal multilayer film back contacts crystal-silicon solar cell in the present invention, its photoelectric transformation efficiency is higher,
Possess certain application prospect.
Brief description of the drawings
Fig. 1 is the knot of the oxide-metal multilayer film back contacts crystal-silicon solar cell prepared in 1-2 of the embodiment of the present invention
Structure schematic diagram；Wherein 1 is silicon substrate, and 2 be passivation layer, and 3 be antireflection film, and 4 be the first sull, and 5 be metallic film,
6 be the second sull, and 71 be emitter metal electrode, and 72 be base metal electrode；
Fig. 2 is oxide-metal multilayer film back contacts crystal-silicon solar cell preparation flow in 1-2 of the embodiment of the present invention
Figure, wherein (1) is being covered in the preceding surface of crystal silicon chip and backside deposition passivation layer, (2) in preceding surface depositing antireflection film, (3)
The first oxide, metallic film and the second oxide are sequentially depositing under the blocking of film version, then deposits emitter metal electrode,
(4) base metal electrode is deposited under the blocking of mask plate；
Fig. 3 is the oxide-metal multilayer film back contacts crystal-silicon solar cell manufacture knot prepared in the embodiment of the present invention 1
The schematic diagram of back surface during beam；
Fig. 4 is to be carried on the back in the embodiment of the present invention 2 at the end of the manufacture of oxide-metal multilayer film back contacts crystal-silicon solar cell
The schematic diagram on surface.
Embodiment
Below in conjunction with the drawings and specific embodiments content that the present invention is furture elucidated, but these embodiments are not intended to limit
Protection scope of the present invention.
Embodiment 1
As shown in fig. 1, the structure that the present embodiment provides is oxide-metal multilayer film back contacts crystalline silicon sun electricity
Pond, including crystal silicon chip 1, the preceding surface of crystal silicon chip 1 and back surface are provided with passivation layer 2, passivation layer 2 is provided with emitter stage, hair
Emitter-base bandgap grading metal electrode 71 and base metal electrode 72, emitter stage is by the first sull 4, the oxide of metallic film 5 and second
Film 6 forms；Wherein the first sull 4 is WO3Film, metallic film are Ag films, and the second sull 6 is
V2O5Film.
Wherein the thickness of the first sull 4 is 5~30nm, and the thickness of metallic film 5 is 2~20nm, and second aoxidizes
The thickness of thing film 6 is 5~80nm.
The preceding surface passivation layer 2 of crystal silicon chip 1 is provided with antireflection film 3.
Gap (light/dark balance emitter metal electrode in figure is provided between emitter metal electrode 71 and base metal electrode 72
White line between 71 and black base metal electrode 72).
Said structure is oxide-metal multilayer film back contacts crystal-silicon solar cell, is prepared by the following method acquisition：
(1) n-type or p-type monocrystalline silicon piece are cleaned with RCA techniques, then using dry oxygen thermal oxidation technology in silicon chip
Front and rear surfaces form SiO2Passivation layer, the temperature for setting thermal oxide is 850 DEG C, and oxidization time is 1~10min, in silicon chip surface
Form 2~5nm SiO2, as shown in (1) in Fig. 2, then in SiO2Antireflection film is deposited on passivation layer, such as (2) institute in Fig. 2
Show；
Wherein RCA cleanings mainly include SPM (H2SO4:H2O2=3:1) organics removal, DHF (HF:H2O=1:30)
Removing oxide layer is removed, with APM (NH4OH:H2O2:H2O=1:1:5) particle, HPM (HCl are removed:H2O2:H2O=1:1:6) gold is removed
Belong to impurity；
(2) and then by resistance-type thermal evaporation coating machine in passivation layer back surface, WO is prepared by metal mask plate3It is thin
Film, vacuum are about 5 × 10-4Pa, the thickness of film is 5~30nm, wherein metal mask plate and base metal electrode figure phase
Adaptation；
(3) resistance-type thermal evaporation coating machine evaporation Ag films are reused, vacuum is about 8 × 10-4Pa, thickness be 2~
20nm；
(4) then reuse resistance-type thermal evaporation coating machine prepare V2O5Film and emitter metal electrode, vacuum is about
For 5 × 10-4Pa, V2O5The thickness of film is 5~80nm, and the thickness of metal electrode is 1~10 μm, as shown in (3) in Fig. 2；
(5) base metal electrode is prepared finally by metal mask plate, as shown in (4) in Fig. 2；At the end of manufacture, oxidation
The schematic diagram of thing-metallized multilayer film back contacts crystal-silicon solar cell back surface is as shown in figure 3, wherein metal mask plate is with launching
Pole figure shape is adapted.
Embodiment 2
The structure that the present embodiment provides is oxide-metal multilayer film back contacts crystal-silicon solar cell, with embodiment 1 not
With passivation layer 2 is Al2O3Passivation layer, the first sull 4 are V2O5, metallic film 5 is Au films, the second oxide
Film 6 is WO3。
Said structure is oxide-metal multilayer film back contacts crystal-silicon solar cell, is prepared by the following method acquisition：
(1) n-type or p-type monocrystalline silicon piece are cleaned with RCA techniques, then using ald (ALD) technology
One layer of Al is deposited in silicon chip front and rear surfaces2O3Passivation layer, it is 200 DEG C to set depositing temperature, Al (TMA), N2、H2O burst length
Respectively：0.1s, 10s and 0.1s, flow velocity are respectively：150sccm, 150sccm and 200sccm, 10~30 circulations are carried out,
Silicon chip surface deposits 1~3nm Al2O3；As shown in (1) in Fig. 2；Then in Al2O3Antireflection film is deposited on passivation layer, such as
In Fig. 2 shown in (2)；
Wherein RCA cleanings mainly include SPM (H2SO4:H2O2=3:1) organics removal, DHF (HF:H2O=1:30)
Removing oxide layer is removed, with APM (NH4OH:H2O2:H2O=1:1:5) particle, HPM (HCl are removed:H2O2:H2O=1:1:6) gold is removed
Belong to impurity；
(2) and then by resistance-type thermal evaporation coating machine in passivation layer back surface, V is prepared by metal mask plate2O5It is thin
Film, vacuum are about 5 × 10-4Pa, the thickness of film is 5~30nm；
(3) resistance-type thermal evaporation coating machine evaporation Au films are reused, vacuum is about 8 × 10-4Pa, thickness be 2~
20nm；
(4) then reuse resistance-type thermal evaporation coating machine prepare WO3Film and emitter metal electrode, vacuum is about
For 5 × 10-4Pa, WO3The thickness of film is 5~80nm, and the thickness of emitter metal electrode is 1~10 μm, as shown in (3) in Fig. 2；
(5) metal electrode of base stage is prepared finally by metal mask plate, as shown in (4) in Fig. 2；At the end of manufacture, oxygen
The schematic diagram of compound-metallized multilayer film back contacts crystal-silicon solar cell back surface is as shown in Figure 4.
Embodiment 3
The structure that the present embodiment provides is oxide-metal multilayer film back contacts crystal-silicon solar cell, with embodiment 1 not
With passivation layer 2 is TiO2Passivation layer, the first sull 4 are V2O5, metallic film 5 is Pd films, the second oxide
Film 6 is NiO.
Said structure is oxide-metal multilayer film back contacts crystal-silicon solar cell, is prepared by the following method acquisition：
(1) n-type or p-type monocrystalline silicon piece are cleaned with RCA techniques, then using ald (ALD) technology
One layer of TiO is deposited in silicon chip front and rear surfaces2Passivation layer, it is 200~300 DEG C to set depositing temperature, TiCl4、N2、H2During O pulse
Between be respectively：1s, 3s and 1s, flow velocity are respectively：150sccm, 150sccm and 200sccm, 10~30 circulations are carried out, in silicon
Piece surface deposits 1~3nm titanium dioxide；As shown in Fig. 2 (1)；Then in TiO2Antireflection film is deposited on passivation layer, is such as schemed
In 2 shown in (2)；
Wherein RCA cleanings mainly include SPM (H2SO4:H2O2=3:1) organics removal, DHF (HF:H2O=1:30)
Removing oxide layer is removed, with APM (NH4OH:H2O2:H2O=1:1:5) particle, HPM (HCl are removed:H2O2:H2O=1:1:6) gold is removed
Belong to impurity；
(2) and then by resistance-type thermal evaporation coating machine in passivation layer back surface, V is prepared by metal mask plate2O5It is thin
Film, vacuum are about 5 × 10-4Pa, the thickness of film is 5~30nm；
(3) resistance-type thermal evaporation coating machine evaporation Pd films are reused, vacuum is about 8 × 10-4Pa, thickness be 2~
20nm；
(4) and then resistance-type thermal evaporation coating machine preparation NiO films and emitter metal electrode are reused, vacuum is about
For 5 × 10-4The thickness of Pa, NiO film is 5~80nm, and the thickness of emitter metal electrode is 1~10 μm, as shown in (3) in Fig. 2；
(5) base metal electrode is prepared finally by metal mask plate, as shown in (4) in Fig. 2；At the end of manufacture, oxidation
The schematic diagram of thing-metallized multilayer film back contacts crystal-silicon solar cell back surface is as shown in Figure 3.
Obviously, the above is simply to illustrate that the features of the present invention, and not limitation of the present invention, relevant technology neck
The those of ordinary skill in domain should belong to the protection category of the present invention according to the present invention in the change that corresponding technical field is made.
Claims (10)
1. a kind of oxide-metal multilayer film back contacts crystal-silicon solar cell, including crystal silicon chip, before the crystal silicon chip
Surface and back surface are provided with passivation layer, it is characterized in that：The back surface passivation layer be provided with emitter stage, emitter metal electrode and
Base metal electrode, the emitter stage are made up of the first sull, metallic film and the second sull；Wherein first
Sull or the second sull are WO3Film, NiO films or V2O5Film, the metallic film are Ag films, Au
Film, Pd films, Cu films, Ni films, Mo films, W film or Al films.
2. oxide-metal multilayer film back contacts crystal-silicon solar cell according to claim 1, it is characterized in that：It is described
The thickness of first sull is 5~30nm, and the thickness of the metallic film is 2~20nm, second sull
Thickness be 5~80nm.
3. oxide-metal multilayer film back contacts crystal-silicon solar cell according to claim 2, it is characterized in that：It is described
First sull and the second sull are made using resistance-type thermal evaporation, electron beam evaporation or magnetron sputtering method；Institute
Metallic film is stated to be made using resistance-type thermal evaporation evaporation.
4. oxide-metal multilayer film back contacts crystal-silicon solar cell according to claim 1, it is characterized in that：It is described
Crystal silicon chip is monocrystalline silicon piece, polysilicon chip or or silicon thin film.
5. oxide-metal multilayer film back contacts crystal-silicon solar cell according to claim 1, it is characterized in that：It is described
Gap is provided between emitter metal electrode and the base metal electrode.
6. oxide-metal multilayer film back contacts crystal-silicon solar cell according to claim 1, it is characterized in that：It is described
The preceding surface passivation layer of crystal silicon chip is provided with antireflection film.
7. the preparation method of the oxide-metal multilayer film back contacts crystal-silicon solar cell described in claim any one of 1-5,
It is characterized in that comprise the following steps：
(1) crystal silicon chip is chosen, after cleaning, in the preceding surface of crystal silicon chip and back surface deposit passivation layer；
(2) mask plate being adapted with base metal electrode figure is set to cover base metal electrode at the crystal silicon chip back side,
Depositing first oxide film in back surface deposit passivation layer, the deposited metal film on the first sull, in metal foil
Depositing second oxide film on film, form emitter stage；
(3) emitter metal electrode is set on the second sull；
(4) mask plate being adapted with emitter pattern is set to cover emitter stage at the crystal silicon chip back side, in back surface passivation layer
Upper setting base metal electrode, that is, be made oxide-metal multilayer film back contacts crystal-silicon solar cell.
8. the preparation method of oxide-metal multilayer film back contacts crystal-silicon solar cell according to claim 7, it is special
Sign is：Passivation layer described in step (1) is SiO2、TiO2、(i)a-Si:H、Al2O3Or SiNx, its thickness is 1~15nm, is used
Thermal oxide, PECVD, ald or magnetron sputtering method are made.
9. the preparation method of oxide-metal multilayer film back contacts crystal-silicon solar cell according to claim 7, it is special
Sign is：Antireflection film is provided with step (1) on the preceding surface passivation layer of crystal silicon chip, described antireflective coating is MgF2、
SiNx、TiO2, its thickness is 5~300nm, is made using resistance-type thermal evaporation, PECVD, ald or magnetron sputtering method.
10. the preparation method of oxide-metal multilayer film back contacts crystal-silicon solar cell according to claim 7, its
It is characterized in：Emitter metal electrode is prepared using silk screen print method or mask half tone resistance-type thermal evaporation in step (3)；Step
(4) base metal electrode is using the metal grid lines of silk screen print method or the preparation of resistance-type thermal evaporation, the metal grid lines in
0.1~1mm of width, be highly 1~10 μm.
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| JP6330108B1 (en) | 2016-11-07 | 2018-05-23 | 信越化学工業株式会社 | High photoelectric conversion efficiency solar cell and method for producing high photoelectric conversion efficiency solar cell |
| WO2018214023A1 (en) * | 2017-05-23 | 2018-11-29 | 中山大学 | Back-contact heterojunction solar cell and emitter thereof, and preparation method for solar cell |
| CN107170840A (en) * | 2017-05-23 | 2017-09-15 | 中山大学 | Back contacts heterojunction solar battery and its emitter stage, solar cell preparation method |
| CN106992228B (en) * | 2017-05-24 | 2018-11-13 | 中国科学院宁波材料技术与工程研究所 | A kind of preparation method and products thereof of passivation contact solar cell |
| CN108232024B (en) * | 2017-12-29 | 2019-08-16 | 南通北外滩建设工程有限公司 | A kind of solar battery and preparation method thereof |
| CN108321241A (en) * | 2018-01-05 | 2018-07-24 | 中山大学 | A kind of silicon/crystalline silicon heterogenous joint solar cell of back contacts and preparation method |
| CN112165286A (en) * | 2020-09-03 | 2021-01-01 | 成都中建材光电材料有限公司 | Bullet-proof radiation-proof power generation glass capable of shielding electromagnetic signals and preparation method thereof |
| CN112151625B (en) * | 2020-09-04 | 2022-10-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell, production method and cell module |
| CN113644152A (en) * | 2021-07-23 | 2021-11-12 | 杭州电子科技大学 | Thinned crystalline silicon battery pack |
| WO2023172207A2 (en) * | 2022-03-11 | 2023-09-14 | National University Of Singapore | Multi-layer contact structure, photovoltaic cell and method of fabrication of multi-layer contact structure |
| CN115101632B (en) * | 2022-07-18 | 2023-06-23 | 扬州大学 | Preparation method of novel HBC solar cell |
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