CN206624913U - A kind of PECVD double-sided depositions equipment - Google Patents
A kind of PECVD double-sided depositions equipment Download PDFInfo
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- CN206624913U CN206624913U CN201720203426.6U CN201720203426U CN206624913U CN 206624913 U CN206624913 U CN 206624913U CN 201720203426 U CN201720203426 U CN 201720203426U CN 206624913 U CN206624913 U CN 206624913U
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Abstract
The utility model discloses a kind of PECVD double-sided depositions equipment, including feeding area, heating chamber, process cavity, cooling area and discharging area, the feeding area, heating chamber, process cavity, cooling area and discharging area are sequentially connected；The process cavity is provided with upper vent board and lower vent board, and the compressed air source unit connected with upper vent board and lower vent board；The upper vent board and lower vent board are all provided with passage, and upper vent board and lower vent board, which be arranged in parallel and one are provided between two plates, accommodates the current passage of silicon chip；Plane where upper vent board or lower vent board is 15 degree with horizontal plane angle.Using the utility model, the fragment rate of silicon chip in silicon chip positive and negative while depositional coating, can be reduced, improves production efficiency.
Description
Technical field
It the utility model is related to technical field of solar batteries, more particularly to a kind of PECVD double-sided depositions equipment.
Background technology
In photovoltaic solar industry, the manufacture of high efficiency PERC solar cells will pass through making herbs into wool, spread, etching, plated film,
Silk-screen printing, seven big processes of sintering and annealing.Wherein, the purpose of filming process is using plasma reinforced chemical vapour deposition
Method plates pellumina and silicon nitride film in silicon chip back side, and plates silicon nitride film in front side of silicon wafer.
At present, photovoltaic industry plates silicon nitride film, operator using tubular type PECVD or board-like PECVD to silicon chip one side mostly
Silicon chip in the gaily decorated basket is inserted in special graphite boat or graphite frame, or silicon chip is inserted into graphite by automatic charging ＆ discharging machine by work
Boat or graphite frame, graphite boat or graphite frame are then put into plated film in boiler tube.The silicon nitride film deposition of front and back needs two
Secondary plated film, technique is more complicated, and multiple deposition operation easily causes the scuffing of silicon chip, improves fragment rate, is unfavorable for reducing production
The fraction defective of product.
The content of the invention
Technical problem to be solved in the utility model is, there is provided a kind of PECVD double-sided depositions equipment, can be in silicon chip just
Reverse side while depositional coating, the fragment rate of silicon chip is reduced, improve production efficiency.
In order to solve the above-mentioned technical problem, the utility model provides a kind of PECVD double-sided depositions equipment, including feeding
Area, heating chamber, process cavity, cooling area and discharging area, the feeding area, heating chamber, process cavity, cooling area and discharging area connect successively
Connect；The process cavity is provided with upper vent board and lower vent board, and the compressed air source unit connected with upper vent board and lower vent board；
The upper vent board and lower vent board are all provided with passage, and upper vent board and lower vent board be arranged in parallel and in two plates
Between be provided with one and accommodate the current passage of silicon chip；
Plane and horizontal plane angle are 1-5 degree where upper vent board or lower vent board.
As the optimal technical scheme of the PECVD double-sided depositions equipment, the upper vent board is provided with 100-500 ventilation
Hole, a diameter of 1-10mm of passage；The lower vent board is provided with 100-500 passage, a diameter of 1-10mm of passage.
As the optimal technical scheme of the PECVD double-sided depositions equipment, the passage of the upper vent board is with square matrix-shaped
Formula arranges, and the spacing of passage is 1-10mm；The passage of the lower vent board is arranged with box formation, and the spacing of passage is
1-10mm。
As the optimal technical scheme of the PECVD double-sided depositions equipment, the passage of the upper vent board and lower ventilation
The vent arrangement mode of plate is identical with spacing.
As the optimal technical scheme of the PECVD double-sided depositions equipment, the compressed air source unit is provided with ammonia gas tank and silicon
Alkane gas tank, ammonia gas tank and silane gas tank connect with upper vent board through conduit；Ammonia gas tank and silane gas tank pass through with lower vent board
Conduit connects.
As the optimal technical scheme of the PECVD double-sided depositions equipment, passage is provided with the first passage and second and led to
Stomata, the first passage connect with ammonia gas tank, and the second passage connects with silane gas tank.
As the optimal technical scheme of the PECVD double-sided depositions equipment, upper vent board and lower vent board are by quartzy sheet material
It is made.
As the optimal technical scheme of the PECVD double-sided depositions equipment, the distance between upper vent board and lower vent board
For 50-300mm.
Implement the utility model embodiment, have the advantages that：
PECVD double-sided depositions equipment described in the utility model, change on the basis of existing PECVD device in process cavity
Structure so that silicon chip is suspended between two plates, in the bar of HTHP in the presence of upper and lower two pieces of vent board gas injections
Under part, the ammonia and silane gas and the silicon chip that eject react so as in the positive and negative while deposited silicon nitride of silicon chip
Film, the number of repeated deposition is reduced, improve production efficiency, reduce fragment rate；And multiple deposition operation easily causes silicon chip
The scuffing on surface, therefore the damage to silicon chip can be reduced using the utility model PECVD double-sided depositions equipment, improve product and close
Lattice rate, properties of product are more stable reliable.
Brief description of the drawings
Fig. 1 is a kind of structural representation of PECVD double-sided depositions equipment of the utility model；
Fig. 2 is a kind of vent arrangement schematic diagram of PECVD double-sided depositions equipment of the utility model；
Fig. 3 is a kind of another vent arrangement schematic diagram of PECVD double-sided depositions equipment of the utility model.
Embodiment
It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer
Type is described in further detail.
Silicon chip is placed on graphite boat and is sent into reaction chamber by existing PECVD device, and admission line sprays into reaction chamber
Reacting gas, so as to plate film layer in the exposed one side of silicon chip.However as research of the researcher to solar cell properties
Progressively deeply, as PERC solar cells need in silicon chip back side to plate pellumina and silicon nitride film, front side of silicon wafer plates nitrogen
SiClx film, thus, in battery preparation technique need to be deposited film forming three times, not only step repeats cumbersome, and easily causes silicon chip
Scuffing, it is difficult to control the fraction defective of product.
The utility model people has found that the battery front side and the back side all need to plate according to the characteristics of above-mentioned PERC solar cells
The process conditions such as one layer of silicon nitride film, used reacting gas, temperature, pressure are identical, therefore if transform existing PECVD's
Equipment is allowed to save once redeposited time and process in the positive and negative while silicon nitride film of silicon chip, improve
Production efficiency, reduce fragment rate；And multiple deposition operation easily causes the scuffing of silicon chip, therefore use the utility model
PECVD double-sided depositions equipment can reduce the damage to silicon chip, improve product qualification rate, and properties of product are more stable reliable.
As shown in figure 1, the utility model provides a kind of PECVD double-sided depositions equipment, including feeding area 1, heating chamber 2, work
Skill chamber 3, cooling area 4 and discharging area 5, the feeding area 1, heating chamber 2, process cavity 3, cooling area 4 and discharging area 5 are sequentially connected；
The process cavity 3 is provided with upper vent board 6 and lower vent board 7, and the compressed air source unit connected with upper vent board 6 and lower vent board 7
8；
The upper vent board 6 and lower vent board 7 are all provided with passage, upper vent board 6 and lower vent board 7 be arranged in parallel and
One is provided between two plates and accommodates the current passage of silicon chip 9；
Upper vent board 6 or the place plane of lower vent board 7 and horizontal plane angle are 1-5 degree.
Feeding area 1 described in PECVD double-sided depositions equipment described in the utility model be provided with feeder make silicon chip 9 be automatically fed into plus
Preheat in hot chamber 2, then between upper vent board 6 by process cavity 3 and lower vent board 7, sprayed simultaneously in the upper and lower of silicon chip 9 anti-
Gas is answered, silicon chip 9 is suspended between upper vent board 6 and lower vent board 7 through overregulating gas flow rate, in the condition of high-temperature pressurizing
Under in the front and back of silicon chip 9 form silicon nitride film simultaneously, because upper vent board 6 and lower vent board 7 are obliquely installed, in gravity and
Under upper and lower gas shock power collective effect, silicon chip 9 is slowly advanced into channel outlet from channel entrance, after cooling by cooling area 4,
Unloaded by blanking machine from PECVD double-sided depositions equipment described in the utility model.
It should be noted that upper vent board 6 described in the utility model and lower vent board 7 are provided with intensive passage, preferably
Ground, upper vent board 6 and lower vent board 7 are respectively provided with 100-500 passage, and diameter may be selected according to the requirement of gas injection flow velocity
For 1-10mm passage.
In addition, the passage of the upper vent board 6 is arranged with box formation, the spacing of passage is 1-10mm；Under described
The passage of vent board 7 is arranged with box formation, and the spacing of passage is 1-10mm.Preferably, the ventilation of the upper vent board 6
Hole is identical with the vent arrangement mode and spacing of lower vent board 7, consequently facilitating calculating the stressing conditions of silicon chip 9.
Silicon nitride film is formed on silicon chip 9 to be needed to be passed through two kinds of reacting gas of ammonia and silane, therefore, the compressed air source unit
8 are provided with ammonia gas tank and silane gas tank, and upper 6 a part of passage of vent board connects with silane gas tank, sprays silane, silane downwards
Flow velocity is 1500-1800sccm；The upper another part passage of vent board 6 connects with ammonia gas tank, sprays ammonia, ammonia flow downwards
Speed is 4000-10000sccm.Lower 7 a part of passage of vent board connects with silane gas tank, sprays silane, silane flow velocity upwards
For 1800-3000sccm, the lower another part passage of vent board 7 connects with ammonia gas tank, sprays ammonia upwards, ammonia flow velocity is
5000-12000sccm.For the ease of describing that passage is divided into the first passage 10 and the second passage 11 below, first is logical
Stomata 10 connects with ammonia gas tank, sprays ammonia；Second passage 11 connects with silane gas tank, sprays silane.
Because ammonia is different with the flow velocity of silane, therefore needed in the setting of passage by the first passage 10 and second
Passage 11 is arranged at intervals, so that silicon chip uniform force, is provided below two kinds of embodiments：
Embodiment 1, such as Fig. 2, the first passage 10 forms a line（It is designated as " row "）, the second passage 11 forms a line
（It is designated as " two row "）, both line up to form passage square formation in a manner of " row of-one row of-two row of a row-two " are spaced.
Embodiment 2, such as Fig. 3, the position up and down of the first passage 10 is all set to the second passage 11, correspondingly,
The position up and down of second passage 11 is all set to the first passage 10, thus the passage square formation of regularly arranged formation.
Passage is arranged using above two embodiment, the gas that can spray vent board 6 and lower vent board 7 is dense
Degree evenly, and because two kinds of gas flow rate differences of ammonia and silane cause to influence difference to silicon chip impulsive force, is arranged at intervals
Influence of the gas flow rate to silicon chip stressing conditions can farthest be mitigated.
It should be noted that upper vent board 6 described in the utility model and lower vent board 7 are made of quartzy sheet material, and on
Distance is 50-300mm between vent board 6 and lower vent board 7, so that silicon chip passes through between two plates.
In summary, PECVD double-sided depositions equipment described in the utility model, changes on the basis of existing PECVD device
Become the structure of technique intracavitary so that silicon chip is suspended between two plates, in height in the presence of upper and lower two pieces of vent board gas injections
Under conditions of warm high pressure, the ammonia and silane gas that eject are reacted with silicon chip so as to be sunk in the positive and negative of silicon chip simultaneously
Product silicon nitride film, the number of repeated deposition is reduced, improves production efficiency；And multiple deposition operation easily causes drawing for silicon chip
Wound, therefore the damage to silicon chip can be reduced using the utility model PECVD double-sided depositions equipment, improve product qualification rate, production
Moral character can be more stable reliable.
Finally, it should be noted that above example is only illustrating the technical solution of the utility model rather than to this reality
With the limitation of novel protected scope, although being explained in detail with reference to preferred embodiment to the utility model, this area it is common
It will be appreciated by the skilled person that the technical solution of the utility model can be modified or equivalent substitution, without departing from this reality
With the spirit and scope of new technique scheme.
Claims (8)
1. a kind of PECVD double-sided depositions equipment, it is characterised in that including feeding area, heating chamber, process cavity, cooling area and blanking
Area, the feeding area, heating chamber, process cavity, cooling area and discharging area are sequentially connected；The process cavity is provided with upper vent board with
Vent board, and the compressed air source unit connected with upper vent board and lower vent board；
The upper vent board and lower vent board are all provided with passage, and upper vent board and lower vent board be arranged in parallel and between two plates
The current passage of silicon chip is accommodated provided with one；
Plane and horizontal plane angle are 1-5 degree where upper vent board or lower vent board.
2. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that the upper vent board is provided with 100-500 and led to
Stomata, a diameter of 1-10mm of passage；The lower vent board is provided with 100-500 passage, a diameter of 1- of passage
10mm。
3. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that the passage of the upper vent board is with square formation
Form arranges, and the spacing of passage is 1-10mm；The passage of the lower vent board is arranged with box formation, the spacing of passage
For 1-10mm.
4. PECVD double-sided depositions equipment as claimed in claim 3, it is characterised in that the passage of the upper vent board leads to lower
The vent arrangement mode of gas plate is identical with spacing.
5. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that the compressed air source unit be provided with ammonia gas tank and
Silane gas tank, ammonia gas tank and silane gas tank connect with upper vent board through conduit；Ammonia gas tank and silane gas tank and lower vent board
Connected through conduit.
6. PECVD double-sided depositions equipment as claimed in claim 5, it is characterised in that passage is provided with the first passage and second
Passage, the first passage connect with ammonia gas tank, and the second passage connects with silane gas tank.
7. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that upper vent board and lower vent board are by quartz plate
Material is made.
8. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that it is upper between vent board and lower vent board away from
From for 50-300mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720203426.6U CN206624913U (en) | 2017-03-03 | 2017-03-03 | A kind of PECVD double-sided depositions equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720203426.6U CN206624913U (en) | 2017-03-03 | 2017-03-03 | A kind of PECVD double-sided depositions equipment |
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| Publication Number | Publication Date |
|---|---|
| CN206624913U true CN206624913U (en) | 2017-11-10 |
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ID=60211677
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| CN201720203426.6U Active CN206624913U (en) | 2017-03-03 | 2017-03-03 | A kind of PECVD double-sided depositions equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106835072A (en) * | 2017-03-03 | 2017-06-13 | 广东爱康太阳能科技有限公司 | A kind of PECVD double-sided depositions equipment |
| CN110299420A (en) * | 2019-07-09 | 2019-10-01 | 理想晶延半导体设备（上海）有限公司 | The antireflective coating deposition method of crystal silicon solar batteries |
| CN110923670A (en) * | 2019-12-02 | 2020-03-27 | 深圳市安达工业设计有限公司 | Film growth equipment convenient to direction |
-
2017
- 2017-03-03 CN CN201720203426.6U patent/CN206624913U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106835072A (en) * | 2017-03-03 | 2017-06-13 | 广东爱康太阳能科技有限公司 | A kind of PECVD double-sided depositions equipment |
| CN110299420A (en) * | 2019-07-09 | 2019-10-01 | 理想晶延半导体设备（上海）有限公司 | The antireflective coating deposition method of crystal silicon solar batteries |
| CN110923670A (en) * | 2019-12-02 | 2020-03-27 | 深圳市安达工业设计有限公司 | Film growth equipment convenient to direction |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180208 Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |