CA2524487A1 - Vacuum deposition apparatus and method and solar cell material - Google Patents

Vacuum deposition apparatus and method and solar cell material Download PDF

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Publication number
CA2524487A1
CA2524487A1 CA002524487A CA2524487A CA2524487A1 CA 2524487 A1 CA2524487 A1 CA 2524487A1 CA 002524487 A CA002524487 A CA 002524487A CA 2524487 A CA2524487 A CA 2524487A CA 2524487 A1 CA2524487 A1 CA 2524487A1
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CA
Canada
Prior art keywords
substrates
gas
vacuum deposition
heating
plate nozzles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002524487A
Other languages
French (fr)
Other versions
CA2524487C (en
Inventor
Shusaku Yamasaki
Noriaki Hasegawa
Masayuki Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IHI Corp
Original Assignee
Shusaku Yamasaki
Noriaki Hasegawa
Masayuki Mizuno
Ishikawajima-Harima Heavy Industries Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shusaku Yamasaki, Noriaki Hasegawa, Masayuki Mizuno, Ishikawajima-Harima Heavy Industries Co., Ltd. filed Critical Shusaku Yamasaki
Publication of CA2524487A1 publication Critical patent/CA2524487A1/en
Application granted granted Critical
Publication of CA2524487C publication Critical patent/CA2524487C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A vacuum film-forming apparatus is disclosed wherein a film is formed by introducing a substrate (17) heated by a substrate heating unit (3) into a film formation chamber (11). The substrate heating unit (3) has a heating chamber (23), a flat plate nozzle (33) which is so arranged in the heating chamber (23) as to have a desired distance from the surface of the substrate (17) carried into the heating chamber (23) and has a gas feed port (34), and a heated gas feeding unit (32) for supplying a heated gas into the gas feed port (34) of the plate nozzle (33). A face plate (33a) of the plate nozzle (33) facing the substrate (17) is provided with a plurality of gas jet orifices (35) for heating the substrate (17) with heated gas jets coming therefrom and hitting the substrate (17).

Claims (12)

1. A vacuum deposition apparatus wherein substrates heated by a substrate heater are introduced into a deposition chamber for film deposition, characterized in that said substrate heater comprises a heating chamber, flattened plate nozzles arranged in the heating chamber so as to be spaced apart from surfaces of the substrates introduced into said heating chamber by required spacing, each of said plate nozzles being provided with a gas intake, and a heating gas induction device for guiding heating gas to the gas intakes of the plate nozzles, each of said plate nozzles having face plates facing said substrates, a face plate of each of said plate nozzles facing the corresponding substrate being formed with a plurality of gas spout holes so as to heat the substrates through impinging jet of the heating gas.
2. The vacuum deposition apparatus as claimed in claim 1, characterized in that, provided that a representative size of said gas spout holes is B, there is a relationship of H/B < 20 between this B and said required spacing H.
3. The vacuum deposition apparatus as claimed in claim 1, characterized in that, provided that said substrates are made of glass with thickness t and mutual distance between said gas spout holes is r, then there is a relationship r/t < 20.
4. The vacuum deposition apparatus as claimed in claim 1, characterized in that, provided that a typical size of said gas spout holes is B, there is a relationship of H/B
< 20 between this B and said required spacing H and, provided that said substrates are made of glass with thickness t and mutual distance between said gas spout holes is r, then there is a relationship r/t < 20.
5. The vacuum deposition apparatus as claimed in claim 1, characterized in that each of said plate nozzles has opposite face plates each of which has gas spout holes, said substrates being arranged to face the opposite face plates of each of the plate nozzles.
6. The vacuum deposition apparatus as claimed in claim 1, characterized in that the plate nozzles arranged oppositely to each other with the substrate between have gas intakes at positions where nonuniformity in gas spout amounts due to pressure gradients in the respective plate nozzles may be balanced out.
7. The vacuum deposition apparatus as claimed in claim 1, characterized in that said plate nozzles are comb-like nozzles arranged in comb formation between the substrates.
8. The vacuum deposition apparatus as claimed in claim 1, characterized in that said substrates are introduced while supported on the carriage, the heating gas injected from said plate nozzles being introduced into said heating gas induction device through said carriage.
9. A vacuum deposition method, characterized by arranging a substrate heater to be connected to a deposition chamber, introducing substrates into the substrate heater, injecting heating gas from gas spout holes on face plates of plate nozzles which are spaced apart from the substrates by required spacing, heating the substrates by impinging jet, and introducing the substrates into the deposition chamber for film deposition after the substrates are heated to a uniform temperature.
10. The vacuum deposition method as claimed in claim 9, characterized in that said deposition method is a plasma CVD method.
11. Solar cell material produced by the vacuum deposition method as claimed in claim 9.
12. Solar cell material produced by the vacuum deposition method as claimed in claim 10.
CA2524487A 2003-05-02 2004-04-30 Vacuum deposition apparatus and method and solar cell material Expired - Fee Related CA2524487C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003126961 2003-05-02
JP2003-126961 2003-05-02
JP2004079964 2004-03-19
JP2004-079964 2004-03-19
PCT/JP2004/006317 WO2004097913A1 (en) 2003-05-02 2004-04-30 Vacuum film-forming apparatus, vacuum film-forming method and solar battery material

Publications (2)

Publication Number Publication Date
CA2524487A1 true CA2524487A1 (en) 2004-11-11
CA2524487C CA2524487C (en) 2012-01-17

Family

ID=33422093

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2524487A Expired - Fee Related CA2524487C (en) 2003-05-02 2004-04-30 Vacuum deposition apparatus and method and solar cell material

Country Status (6)

Country Link
JP (1) JP4645448B2 (en)
KR (1) KR100919387B1 (en)
AU (1) AU2004234807B2 (en)
CA (1) CA2524487C (en)
TW (1) TWI348769B (en)
WO (1) WO2004097913A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4849316B2 (en) * 2006-02-21 2012-01-11 株式会社Ｉｈｉ Vacuum deposition system
KR101138612B1 (en) * 2007-12-27 2012-04-26 (주)에이디에스 Gas supply device improving vaporization efficiency
KR101041143B1 (en) 2009-04-16 2011-06-13 삼성모바일디스플레이주식회사 Apparatus for Processing Substarate
JP5319464B2 (en) * 2009-09-04 2013-10-16 株式会社カネカ Thin film manufacturing apparatus and thin film manufacturing method
JP5443127B2 (en) * 2009-10-28 2014-03-19 東京エレクトロン株式会社 Plasma processing equipment
KR101223489B1 (en) * 2010-06-30 2013-01-17 삼성디스플레이 주식회사 Apparatus for Processing Substrate
KR20120040433A (en) * 2010-10-19 2012-04-27 삼성전자주식회사 Device jetting an gas and solar cell manufacturing method using the same
JP5698059B2 (en) * 2011-04-08 2015-04-08 株式会社日立国際電気 Substrate processing apparatus and solar cell manufacturing method
CN112234938A (en) * 2020-10-14 2021-01-15 景德镇陶瓷大学 Impact jet cooling system for concentrating solar cell and solar cell device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3145536B2 (en) * 1993-05-28 2001-03-12 京セラ株式会社 Catalytic CVD equipment
JP4089113B2 (en) * 1999-12-28 2008-05-28 株式会社Ｉｈｉ Thin film production equipment
JP2001319885A (en) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc Processing system for substrate and method for producing semiconductor
JP2004006536A (en) * 2002-05-31 2004-01-08 Ishikawajima Harima Heavy Ind Co Ltd Method and device for manufacturing thin film

Also Published As

Publication number Publication date
AU2004234807B2 (en) 2009-08-06
WO2004097913A1 (en) 2004-11-11
JP4645448B2 (en) 2011-03-09
CA2524487C (en) 2012-01-17
AU2004234807A1 (en) 2004-11-11
KR100919387B1 (en) 2009-09-29
KR20060007416A (en) 2006-01-24
JPWO2004097913A1 (en) 2006-07-13
TWI348769B (en) 2011-09-11
TW200532933A (en) 2005-10-01

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Effective date: 20180430