CN101624722A - Gas distributing plate and apparatus for treating substrate including the same - Google Patents
Gas distributing plate and apparatus for treating substrate including the same Download PDFInfo
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- CN101624722A CN101624722A CN200910140179A CN200910140179A CN101624722A CN 101624722 A CN101624722 A CN 101624722A CN 200910140179 A CN200910140179 A CN 200910140179A CN 200910140179 A CN200910140179 A CN 200910140179A CN 101624722 A CN101624722 A CN 101624722A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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Abstract
A gas distribution plate that is installed in a chamber providing a reaction space and supplies a reaction gas onto a substrate placed on a substrate placing plate, wherein the gas distribution plate includes: first and second surfaces opposing to each other, wherein the second surface faces the substrate placing plate and has a recess shape; and a plurality of injection holes each including: an inflow portion that extends from the first surface toward the second surface; a diffusing portion that extends from the second surface toward the first surface; and an orifice portion between the inflow portion and the diffusing portion, wherein the plurality of inflow portions of the plurality of injection holes decrease in gas path from edge to middle of the gas distribution plate, and wherein the plurality of diffusing portions of the plurality of injection holes have substantially the same gas path.
Description
[related application of cross reference]
The right of priority of following case is advocated in this case: in the korean patent application case of Korean application 10-2008-0065816 number and 10-2009-0053463 number, the applying date is respectively on July 8th, 2008 and on June 16th, 2009; These cases are incorporated into for reference at this.
[technical field]
The invention relates to a kind of gas distribution plate and comprise the substrate processing apparatus of this gas distribution plate.
[background technology]
Generally speaking, semiconductor device, display unit, solar cell etc. are that substrate is carried out various processing and produces.For example, carry out that several times thin film deposition process and optical micro-image handled, etch processes forms the circuit pattern on the substrate, still will carry out extra process, as clean, bonding processing, cutting process etc.Among these were handled, depositing treatment and etch processes were to carry out in the chamber profile substrate processing apparatus.For this reason, the gas distribution plate of equipment passed in the reactant gases supply and arrive on the substrate, thus on substrate deposition or etch thin film.
Fig. 1 is the sectional view that illustrates substrate processing apparatus according to related art techniques, and Fig. 2 is the sectional view that illustrates the distortion of gas distribution plate according to related art techniques.
With reference to Fig. 1, usually PECVD (electricity slurry enhanced chemical vapor deposition) equipment is used as substrate processing apparatus 10.Substrate processing apparatus 10 comprises chamber 11, and this chamber comprises Pit cover 12, and is provided with reaction compartment E in inside.Substrate 2 is positioned on the substrate-placing plate 14, and well heater 28 is installed among the substrate-placing plate 14.Gas distribution plate 20 injects reactant gases towards substrate-placing plate 14.Edge frame 26 connects airtight in the inwall of chamber 11, and in order to prevent the outer peripheral areas of thin film deposition at substrate 2.Feed tube 24 is supplied to gas distribution plate 20 with reactant gases.Venting port 22 is in order to the reactant gases among the discharge reaction compartment E, and the vacuum in the conditioned reaction space E.
Pit cover 12 is connected to RF (less radio-frequency) voltage source 13, and substrate-placing plate 14 is connected to ground terminal, and this Pit cover and substrate-placing plate are respectively as top electrode and lower electrode.In view of the above, when reactant gases flowed into reaction compartment E, Pit cover 12 and substrate-placing plate 14 were in order to activated reactive gas.
Edge frame 26 is fixed in the inwall of chamber 11.When substrate-placing plate 14 moved up, edge frame 26 had shielded the outer peripheral areas of substrate 2, thereby prevented that the film of the outer peripheral areas of substrate 2 from forming.
Feed tube 24 is installed, makes it pass the middle portion of Pit cover 12.Baffle plate (not illustrating) is installed in the position of the corresponding feed tube 24 in the spatial accommodation, in order to will be from the reactant gases uniform distribution of feed tube 24.Venting port 22 and vacuum pump (not illustrating) coupling, with the reactant gases among the discharge reaction compartment E, or the vacuum in the conditioned reaction space E.
The film that is deposited on the substrate 2 must have homogeneous thickness and attribute in whole base plate 2.Reactant gases evenly is supplied on the substrate 2, and the electricity that between gas distribution plate 20 and substrate-placing plate 14, produces slurry homogeneity, uniform thickness and attribute can be influenced.In the inhomogeneity factor of even supply that influences reactant gases and electricity slurry, principal element be between gas distribution plate 20 and substrate-placing plate 14 apart from isotropism.In other words, when the distance between gas distribution plate 20 and substrate-placing plate 14 is all equalization, just can obtain the uniformity of film on the substrate 2.
As shown in Figure 1, gas distribution plate 20 was carrying out thin film deposition before the processing on the substrate 2, and its state is parallel with substrate-placing plate 14.Yet after finishing the processing of thin film deposition on substrate 2, the temperature of reaction compartment E must be increased to preset temperature, with decomposition and the reaction of carrying out reactant gases.Because increase in temperature, the gas distribution plate 20 that is installed in Pit cover 12 can expand.As shown in Figure 2, when gas distribution plate 20 expanded, gas distribution plate 20 can be sagging because of the weight effect of gas distribution plate.In view of the above, the distance between gas distribution plate 20 and substrate-placing plate 14 can increase from the edge toward middle.In other words, can be greater than at intermediary distance D cen at the distance D edg at edge.
Moreover along with the size increase of substrate 2 and gas distribution plate 20, in order to handle large size display unit or solar cell, the sagging distortion of gas distribution plate 20 worsens more.In view of the above, be supplied to the reactant gases density on the substrate 2, and the electric pulp density between gas distribution plate 20 and substrate-placing plate 14, be not for evenly, therefore be difficult to the thin film deposition homogeneity of acquisition at substrate 2.Moreover, when the film on the etching substrates 2, be difficult to obtain etch uniformity.Therefore, the homogeneity of film meeting deterioration, production efficiency just reduces.
[summary of the invention]
In view of the above, the present invention is gas distribution plate and the substrate processing apparatus that comprises this gas distribution plate.The present invention will eliminate the restriction of related art techniques and one or more problem that shortcoming caused.
Additional features of the present invention and advantage will be in following narrations, and its part will be understood from specification sheets, or can know by implementing the present invention.Purpose of the present invention and other advantages can by following embodiment and graphic in the structure mentioned especially and method and clearer.
In order to reach these and other advantage, and foundation is as illustrating and broadly described purpose of the present invention with embodiment at this, the invention provides a kind of gas distribution plate, be installed in the chamber that is provided with reaction compartment, reactant gases is supplied to mounting on the substrate on the substrate-placing plate, wherein this gas distribution plate comprises: first and second surface, it disposes in opposite directions, wherein, this second surface is towards this substrate-placing plate, and has a recess shapes; And several filling orifices, respectively this filling orifice comprises: the part that becomes a mandarin, extend towards this second surface from this first surface; One diffusion part extends towards this first surface from this second surface; An and bore portions, be to become a mandarin between part and this diffusion part between this, wherein, several of these several filling orifices become a mandarin gas passage partly from the past centre shortening of the edge of this gas distribution plate, and wherein, several diffusion parts of these several filling orifices have the identical gas passage of essence.
Implement in the aspect at another, a substrate processing apparatus comprises: a chamber is provided with a reaction compartment; One substrate-placing plate is positioned at this reaction compartment, and wherein, a substrate-placing is on this substrate-placing plate; And a gas distribution plate, being positioned at this reaction compartment, this gas distribution plate comprises: first and second surface, it disposes in opposite directions, and wherein, this second surface is towards this substrate-placing plate, and has a recess shapes; And several filling orifices, respectively this filling orifice comprises: the part that becomes a mandarin, extend towards this second surface from this first surface; One diffusion part extends towards this first surface from this second surface; An and bore portions, be to become a mandarin between part and this diffusion part between this, wherein, several of these several filling orifices become a mandarin gas passage partly from the past centre shortening of the edge of this gas distribution plate, and wherein, several diffusion parts of these several filling orifices have the identical gas passage of essence.
Gas distribution plate provided by the present invention and comprise the substrate processing apparatus of this gas distribution plate, its advantage is for improving the homogeneity and the production efficiency of film.
When recognizing, the description of aforementioned blanket property and subsequent detailed description are exemplary and indicative, and it only please invent the proposition further instruction to institute.
[description of drawings]
In this alterations that comprises is to assist to provide more detailed explanation of the present invention, and it is incorporated the back at this and is the part of this specification sheets, and the explanation embodiments of the invention, when understanding simultaneously with invention description, can explain invention main idea of the present invention.In graphic:
Fig. 1 is the sectional view that illustrates substrate processing apparatus according to related art techniques;
Fig. 2 is the sectional view that illustrates the distortion of gas distribution plate according to related art techniques;
Fig. 3 illustrates the gas distribution plate of substrate processing apparatus and the sectional view of substrate-placing plate according to the first embodiment of the present invention;
Fig. 4 and Fig. 5 illustrate the top of gas distribution plate and the orthographic plan of lower surface respectively according to the first embodiment of the present invention;
Fig. 6 is the sectional view that illustrates substrate processing apparatus according to a second embodiment of the present invention;
Fig. 7 is the sectional view that illustrates gas distribution plate and substrate-placing plate according to a second embodiment of the present invention;
Fig. 8 amplifies the sectional view that illustrates a part of gas distribution plate according to a second embodiment of the present invention;
Fig. 9 and Figure 10 illustrate the top of gas distribution plate and the sectional view of lower surface according to a second embodiment of the present invention and respectively;
Figure 11 is an a third embodiment in accordance with the invention and illustrate the sectional view of the gas distribution plate of substrate processing apparatus; And
Figure 12 is an a third embodiment in accordance with the invention and illustrate the orthographic plan of the second surface of gas distribution plate.
2 substrates, 14 substrate-placing plates
10 substrate processing apparatus, 18 filling orifices
11 chambers, 20 gas distribution plates
12 Pit covers, 22 venting ports
13 voltage sources, 24 feed tube
26 edge frames, 312 bore portions
28 well heaters 314 part that becomes a mandarin
102 substrates, 316 diffusion parts
110 substrate processing apparatus, 350 first terraced portion parts
111 chambers, 352 second terraced portion parts
112 Pit covers 354 the 3rd terraced portion part
113 voltage sources, 410 filling orifices
114 substrate-placing plates, 412 bore portions
122 venting ports 414 part that becomes a mandarin
123 sinking parts, 416 diffusion parts
124 feed tube D1 ~ D3 width
126 edge frame Dedg, Dcen, D ' edg, D ' cen
128 well heater distances
200 gas distribution plate E reaction compartments
201 first surfaces ID1 ~ ID3 gas passage
203 second surface L1, first gas passage
205 first side surface L2, second gas passage
207 second side surface L3 the 3rd gas passage
210 filling orifice P1 ..., Pn at interval
212 bore portions P1 ' at interval
The 214 part P1 that become a mandarin " at interval
216 diffusion part S1 ..., the Sn diameter
310 filling orifices
[embodiment]
Now be described in detail embodiments of the invention with reference to alterations.
Fig. 3 illustrates the gas distribution plate of substrate processing apparatus and the sectional view of substrate-placing plate according to the first embodiment of the present invention, and Fig. 4 and Fig. 5 illustrate the top of gas distribution plate and the orthographic plan of lower surface respectively according to the first embodiment of the present invention.
With reference to Fig. 3 to Fig. 5, in the substrate processing apparatus of first embodiment, gas distribution plate 200 comprises first surface 201 (being called top surface), second surface 203 (being called lower surface) and first and second side surface 205 and 207.First surface 201 can be parallel to substrate-placing plate 114.Second surface 203 is towards substrate-placing plate 114, and it also has recess shapes, as contains the recess shapes of concave surface.Gas distribution plate 200 has several filling orifices 210, and reactant gases is injected towards the substrate 102 that is positioned on the substrate-placing plate 114.Gas distribution plate 200 and substrate-placing plate 114 are arranged in the chamber (not illustrating) that is provided with reaction compartment (not illustrating).Gas distribution plate 200 and substrate-placing plate 114 can have the identical shape of essence in the plane, as circle or rectangular shape.
Each filling orifice 210 can comprise the part 214 that becomes a mandarin, bore portions 212 and diffusion part 216.Part that becomes a mandarin 214 and diffusion part 216 are respectively as the inlet and the outlet of filling orifice 210.
The part that becomes a mandarin 214 is extended towards second surface 203 from first surface 201.Know from experience the part 214 that becomes a mandarin from the reaction gas of outside supply.Bore portions 212 is led to the part 214 that becomes a mandarin, and its diameter can be less than the diameter of the part 214 that becomes a mandarin.Diffusion part 216 leads to bore portions 212, and extends to second surface 203, and reactant gases is supplied towards substrate-placing plate 114.Several filling orifices 210 can distribute with the essence identical distance on gas distribution plate 200 equably.
For deposition or etch thin film on substrate 102, reactant gases is supplied to the reaction compartment of chamber, and the temperature in the chamber can be increased to Celsius approximately 200 or 500 and spends.In view of the above, gas distribution plate 200 can thermal expansions, and under the weight effect of gas distribution plate 200 and sagging.Describe as correlation technique,,, can reduce from the edge toward the centre just the distance between gas distribution plate and substrate-placing plate can not be equalization if gas distribution plate is smooth.
Yet the gas distribution plate 200 of first embodiment has the recess shapes that contains concave surface on second surface 203, with compensation caused because of gas distribution plate 200 is sagging apart from disparity.In other words, before deposition or etch thin film on the substrate 102, the distance between gas distribution plate 200 and substrate-placing plate 114 reduces from the edge toward the centre.For example, at the distance D edg at edge less than at intermediary distance D cen.Then, when deposition on substrate 102 or during etch thin film, gas distribution plate 200 sagging is that the thermal expansion because of gas distribution plate 200 causes.Yet because of considering the sagging of gas distribution plate 200 in advance, second surface 203 has the recess shapes that contains concave surface.In view of the above, even gas distribution plate 200 is sagging, the structure with the recess shapes that contains concave surface of second surface 203 can compensate the unequal distance that causes because of sagging.Therefore, the distance between gas distribution plate 200 and substrate-placing plate 114 can be essentially whole equalizations.For example, ' edg can essence be same as during treatment substrate 102 be positioned at the intermediary distance D ' cen in the distance D that is positioned at the edge during the treatment substrate 102.
For example, second surface 203 can have the gas distribution plate of smooth second surface and forms by preparation, then, based on experiment or simulation, consider the downward protrusion radian of the smooth second surface that causes because of thermal expansion, handle smooth second surface, contain the second surface 203 of concave surface with formation.When handling smooth second surface, also can consider volume because of the downward protrusion of smooth second surface that thermal expansion causes.
Have the recess shapes that contains concave surface because second surface 203 formed, the thickness of gas distribution plate 200 can reduce from the edge toward the centre.When the gas distribution plate thermal expansion, the distance between gas distribution plate 200 and substrate-placing plate 114 can be impartial, but first surface 201 has sinking part 123.Yet sinking part 123 can not influence the injection that reactant gases passes filling orifice 210 in fact.
As mentioned above, second surface 203 will be in order to becoming equalization between the distance between gas distribution plate 200 and the substrate-placing plate 114, and this can improve reactant gases and the electric density uniformity of starching in the reaction compartment.Yet because of diffusion part 216 events, the density of reactant gases can change because of the position is different.
More specifically, the diameter of diffusion part 216 212 increases to second surface 203 from the aperture.For example, diffusion part 216 has truncated cone.Several parts 214 that become a mandarin have the identical height of essence, that is, the first gas passage L1 that essence is identical, and several bore portions 212 have the identical height of essence, that is, the second gas passage L2 that essence is identical.Yet because of the second surface 203 events that contain recess, several diffusion parts 216 have the 3rd gas passage L3 that differs from one another.In other words, because of the second surface 203 events that contain recess, the 3rd gas passage L3 reduces from the edge toward the centre.Moreover because of each diffusion part 216 has truncated cone, several diffusion parts 216 have the diameter that differs from one another.In other words, the diameter of diffusion part 216 reduces from the edge toward the centre.
The part that becomes a mandarin 214 is by the specific gas flow rate and the gas flow of bore portions 212 conditioned reaction gases.Diameter is greater than the diffusion part 216 of the diameter of bore portions 212, and it spreads in order to the reactant gases that will pass become a mandarin part 214 and bore portions 212, and reactant gases evenly is injected on the substrate 102.The reactant gases that is fed on the substrate 102 is directly proportional with the diameter of bore portions 212 and the volume of diffusion part 216.Several become a mandarin partly and bore portions 214 and 212 has essence identical first and second gas passage L1 and L2 respectively.Yet several diffusion parts 216 have the 3rd gas passage L3 and the volume that differs from one another.In view of the above, the injection rate from the reactant gases of several diffusion parts 216 is different each other.In other words, injection rate reduces from the edge toward the centre.
With reference to Fig. 4, several parts 214 that become a mandarin that are positioned at the first surface 201 of gas distribution plate 200 have the identical diameter S1 of essence, each other and spaced apart with essence identical distance P1.With reference to Fig. 5, several diffusion parts 216 have different diameter S1 ..., Sn, each other and with different interval P1 ..., Pn is spaced apart.For example, diffusion partly 216 diameter increases toward the edge from middle, and the interval between several diffusion parts 216 reduces toward the edge from middle.
In view of the above, compensated the sagging unequal distance that causes because of gas distribution plate 200 even contain the second surface 203 of concave surface because diffusion part 216 have different gas passages and volume so, the injection rate of reactant gases can increase toward the edge from middle.Therefore, the reactant gases density between gas distribution plate 200 and substrate-placing plate 114 can be uneven, thereby can make on substrate 102 film uniform deposition or etching is quite difficult.
For head it off, second embodiment is proposed now, as following.
Fig. 6 is the sectional view that illustrates substrate processing apparatus according to a second embodiment of the present invention, and Fig. 7 is the sectional view that illustrates gas distribution plate and substrate-placing plate according to a second embodiment of the present invention.Fig. 8 amplifies the sectional view that illustrates a part of gas distribution plate according to a second embodiment of the present invention.Fig. 9 and Figure 10 illustrate the top of gas distribution plate and the sectional view of lower surface according to a second embodiment of the present invention and respectively.Now will omit in the present embodiment narration with the first embodiment similar components.
With reference to Fig. 6 to Figure 10, the substrate processing apparatus 110 of second embodiment comprises chamber 111, and this chamber comprises Pit cover 112, and portion is provided with reaction compartment E within it.Substrate-placing plate 114 is positioned at reaction compartment E, and substrate 102 mountings are on substrate-placing plate 114.Well heater 128 is installed in the substrate-placing plate 114, with heated substrates 102.Gas distribution plate 200 is supplied reactant gases towards substrate-placing plate 114.Edge frame 126 connects airtight on the inwall of chamber 111, and it is in order to prevent the outer peripheral areas of thin film deposition at substrate 102.Feed tube 124 supply reactant gasess.Reactant gases in the venting port 122 conditioned reaction space E, and the vacuum among the reaction compartment E.
Each filling orifice 310 can comprise the part 314 that becomes a mandarin, bore portions 312 and diffusion part 316.Part that becomes a mandarin 314 and diffusion part 316 are respectively as the inlet and the outlet of filling orifice 310.
The part that becomes a mandarin 314 is extended towards second surface 203 from first surface 201.From the reactant gases of outside supply becomes a mandarin part 314.Bore portions 312 is led to the part 314 that becomes a mandarin, and its diameter can be less than the diameter of the part 314 that becomes a mandarin.Diffusion part 316 leads to bore portions 312, and extends to second surface 203, and reactant gases is injected on the substrate-placing plate 114.Several filling orifices 310 can distribute with the essence identical distance on gas distribution plate 200 equably.
Before treatment substrate 102, the distance between gas distribution plate 200 and substrate-placing plate 114 increases from the edge toward middle.For example, at the distance D edg at edge less than at intermediary distance D cen.Then, when treatment substrate 102, gas distribution plate 200 can be sagging, and therefore the distance between gas distribution plate 200 and substrate-placing plate 114 becomes equalization.For example, ' edg can essence be same as during treatment substrate 102 be positioned at the intermediary distance D ' cen in the distance D that is positioned at the edge during the treatment substrate 102.
The part that becomes a mandarin 314 has and is about several microns diameter, itself and by bore portions 312 adjustments of gas flow rate and gas flows.Diameter is greater than the diffusion part 316 of the diameter of bore portions 312, and it spreads in order to the reactant gases that will pass become a mandarin part 314 and bore portions 312, and reactant gases evenly is injected on the substrate 102.The reactant gases that is fed on the substrate 102 is directly proportional with the diameter of bore portions 312 and the volume of diffusion part 316.In a second embodiment, several diffusion parts 316 have the identical volume of essence, so that the reactant gases uniformly distributing is on substrate 102.
The part that becomes a mandarin 314 extends to corresponding bore portions 312 from first surface 210.Several bore portions 312 are arranged to the concave of second surface 203 with the identical shape of essence.In view of the above, the become a mandarin height of part 314 increases toward the edge from middle.With reference to Fig. 8, three adjacent parts 314 that become a mandarin have three height that differ from one another, that is, three gas passage ID1 to ID3.In other words, the become a mandarin first gas passage L1 of part 314 increases toward the edge from middle usually: ID1＜ID2＜ID3.
Several bore portions 312 and several diffusion parts 316 are parallel with second surface 203.In view of the above, several bore portions 312 have the second identical gas passage L2 of essence, and several diffusion parts 316 have the 3rd identical gas passage L3 of essence.
With reference to Fig. 9, when observing several from first surface 201 and become a mandarin part 314, several parts 314 that become a mandarin have the identical diameter S1 of essence, each other and spaced apart with essence identical distance P1.Yet with reference to Fig. 7, when several became a mandarin part 314 from second surface 203 observations, several parts that become a mandarin seemed spaced apart by different interval each other, as different interval P1 ' and P1 ".
With reference to Figure 10, when from second surface 203 several diffusion parts 316 of observation, several diffusion parts 316 have the identical diameter S2 of essence, and are spaced apart with essence identical distance P2 each other.Can have shape as elliptic arc because contain the section of the second surface 203 of concave surface, and the central axial line of each diffusion part 316 is perpendicular to substrate-placing plate 114, the area of the diffusion part of observing from second surface 203 316 can increase toward the edge from middle slightly.Yet this increases the variation that can not influence the amount of reactant gases of being injected from diffusion part 316 in fact slightly.In view of the above, just several diffusion parts 316 are considered as having the identical diameter S2 of essence, each other and spaced apart with essence identical distance P2.
As mentioned above, in a second embodiment, when gas distribution plate 200 because of thermal expansion when sagging because second surface 203 has the recess shapes that contains concave surface, will compensate the non-isotropism of distance between gas distribution plate 200 and substrate-placing plate 114.Moreover because several diffusion parts 316 have the identical gas passage L3 of essence, diameter S2 and volume, the reaction gas physical efficiency is evenly distributed on the whole base plate 102.
First and second embodiment provides the gas distribution plate with the second surface that contains concave surface, and following the 3rd embodiment provides the gas distribution plate with scalariform second surface.
Figure 11 is an a third embodiment in accordance with the invention and illustrate the sectional view of the gas distribution plate of substrate processing apparatus, and Figure 12 is an a third embodiment in accordance with the invention and illustrate the orthographic plan of the second surface of gas distribution plate.Now will omit in the present embodiment narration with first, second embodiment similar components.
With reference to Figure 10 and Figure 11, in the substrate processing apparatus of the 3rd embodiment, gas distribution plate 200 comprises first surface 201 (being called top surface), second surface 203 (being called lower surface) and first and second side surface 205 and 207.First surface can be parallel with substrate-placing plate 114.Second surface 203 is towards substrate-placing plate 114, and has recess shapes, as the recess shapes of scalariform.Gas distribution plate 200 has several filling orifices 410, and reactant gases is injected towards the substrate 102 that is positioned on the substrate-placing plate 114.Gas distribution plate 200 and substrate-placing plate 114 are positioned at the chamber that is provided with reaction compartment.Gas distribution plate 200 and substrate-placing plate 114 can have the identical shape of essence in the plane, as circle or rectangular shape.
The setting of first to the 3rd terraced portion part 350,352,354 is that the center of the center of the center that preferably makes the first terraced portion part 350, the second terraced portion part 352 and the 3rd terraced portion part 354 is all by passing substantially as the elliptic arc in the second surface section of first and second embodiment.Second and third terraced portion part 352 and 354 is arranged in the concentric(al) circles mode around the first terraced portion part 350.Because the center of first to the 3rd terraced portion part 352,352,354 corresponds to elliptic arc, the area of the first terraced portion part 350 is greater than the area of the second terraced portion part 352, and the area of the second terraced portion part 352 is greater than the area of the 3rd terraced portion part 354.
Each filling orifice 410 can comprise the part 414 that becomes a mandarin, bore portions 412 and diffusion part 416.Part that becomes a mandarin 414 and diffusion part 416 are respectively as the inlet and the outlet of filling orifice 410.
The part that becomes a mandarin 414 is extended towards second surface 203 from first surface 201.From the reactant gases of outside supply becomes a mandarin part 414.Bore portions 412 is led to the part 414 that becomes a mandarin, and its diameter can be less than the diameter of the part 414 that becomes a mandarin.Diffusion part 416 leads to bore portions 412, and extends to second surface 203, and reactant gases is injected on the substrate-placing plate 114.Several filling orifices 410 can distribute with the essence identical distance on gas distribution plate 200.
The part that becomes a mandarin 414 extends to corresponding bore portions 412 from first surface 201.Several bore portions 412 are arranged to the terraced portion shape of second surface with the identical shape of essence.In view of the above, several parts 414 that become a mandarin are divided into three groups, first to the 3rd group corresponds to first to the 3rd terraced portion part 350,352,354 respectively.First has three height that differ from one another to third part, i.e. three gas passage ID1 to ID3.Change speech, first gas passage of the part that becomes a mandarin 314 increases toward the edge from middle usually, i.e. ID1＜ID2＜ID3.First group bore portions 412 has the identical gas passage ID1 of essence, and second group bore portions 412 has the identical gas passage ID2 of essence, and the 3rd group bore portions 412 has the identical gas passage ID3 of essence.
Be arranged to several bore portions 412 and several diffusion parts 416 parallel with second surface 203.In view of the above, several bore portions 412 have the second identical gas passage of essence, and several diffusion parts 416 have the 3rd identical gas passage of essence.
Filling orifice 418 is by bore portions 412 adjustments of gas flow rate and gas flows.Diameter is greater than the diffusion part 416 of the diameter of bore portions 412, and it spreads in order to the reactant gases that will pass become a mandarin part 414 and bore portions 412, and reactant gases evenly is injected on the substrate 102.The reactant gases that is fed on the substrate 102 is directly proportional with the diameter of bore portions 412 and the volume of diffusion part 416.The 3rd embodiment is similar in appearance to second embodiment, and several diffusion parts 416 have the identical volume of essence, so that reactant gases is evenly distributed on the substrate 102.
In the 3rd embodiment,, can separately make first to the 3rd terraced portion part 350,352,354, then with its combination in order to simplify the manufacturing of gas distribution plate.When separately making first to the 3rd terraced portion part 350,352,354, can reduce production time and cost.
As above-mentioned embodiment, because the lower surface of gas distribution plate has recess shapes,, still can obtain all equidistant between gas distribution plate and substrate-placing plate, and can improve the homogeneity that reactant gases and electricity are starched even thermal expansion takes place.
Moreover, when several diffusion parts have the identical gas passage of essence, reactant gases evenly can be fed on the substrate.In view of the above, just can on substrate, deposit and etch thin film equably.
When the lower surface of gas distribution plate has terraced portion shape, can simplify the processing procedure of gas distribution plate again.
Have in the art and know that usually the knowledgeable can understand, under the situation that does not depart from spirit of the present invention and scope, can carry out various modifications and variation the present invention.Therefore, if these modifications and variation fall into the scope and the equipollent thereof of appended claims, desire of the present invention contains it.
Claims (16)
1. gas distribution plate, it is to be installed in the chamber that is provided with a reaction compartment, and a reactant gases is supplied to mounting on the substrate on the substrate-placing plate, this gas distribution plate comprises:
First and second surface, it disposes in opposite directions, and wherein, this second surface is towards this substrate-placing plate, and has a recess shapes; And
Several filling orifices, respectively this filling orifice comprises:
One part that becomes a mandarin is extended towards this second surface from this first surface;
One diffusion part extends towards this first surface from this second surface; And
One bore portions, be to become a mandarin between part and this diffusion part between this, wherein, several of these several filling orifices become a mandarin gas passage partly from the past centre shortening of the edge of this gas distribution plate, and wherein, several diffusion parts of these several filling orifices have the identical gas passage of essence.
2. gas distribution plate as claimed in claim 1, wherein, the distance between this second surface and this substrate-placing plate reduces toward the edge from the centre of this gas distribution plate.
3. gas distribution plate as claimed in claim 1, wherein, this first surface is smooth, and it is parallel with this substrate-placing plate.
4. gas distribution plate as claimed in claim 1, wherein, these several become a mandarin part in the essence identical distance setting to become a mandarin at these between part on the plane of this gas distribution plate, and these several part that becomes a mandarin is being provided with the interval that increases toward the edge from the centre of this gas distribution plate that becomes a mandarin at these between part on this second surface.
5. gas distribution plate as claimed in claim 1, wherein, several bore portions of these several filling orifices have the identical gas passage of essence, and parallel with this second surface.
6. gas distribution plate as claimed in claim 1, wherein, these several diffusion parts have identical diameter of essence and volume, and are provided with the essence identical distance between these diffusion parts, and parallel with this second surface.
7. gas distribution plate as claimed in claim 1, wherein, a central axis of this diffusion part is perpendicular to this substrate-placing plate.
8. gas distribution plate as claimed in claim 1, wherein, this diffusion part has the taper that cut off at a top.
9. gas distribution plate as claimed in claim 1, wherein, the recess shapes of this second surface has an oval arcuation of section.
10. gas distribution plate as claimed in claim 1, wherein, this second surface comprises several terraced portion parts.
11. gas distribution plate as claimed in claim 10, wherein, this several terraced portion part is in order to the centre of concentrically ringed mode around this gas distribution plate.
12. gas distribution plate as claimed in claim 10, wherein, these several terraced portion partly comparatively caves in to the centre from the edge of this gas distribution plate.
13. gas distribution plate as claimed in claim 10, wherein, these several part that becomes a mandarin is divided into several groups that correspond to this several terraced portion part respectively, and these several groups have gas passages different between it.
14. gas distribution plate as claimed in claim 10, wherein, these several part that becomes a mandarin is divided into several groups that correspond to this several terraced portion part respectively, and in this several group, the part that becomes a mandarin of each group has the identical gas passage of essence.
15. a substrate processing apparatus comprises:
One chamber is provided with a reaction compartment;
One substrate-placing plate is positioned at this reaction compartment, and wherein, a substrate-placing is on this substrate-placing plate; And
One gas distribution plate is positioned at this reaction compartment, and this gas distribution plate comprises:
First and second surface, it disposes in opposite directions, and wherein, this second surface is towards this substrate-placing plate, and has a recess shapes; And
Several filling orifices, respectively this filling orifice comprises:
One part that becomes a mandarin is extended towards this second surface from this first surface;
One diffusion part extends towards this first surface from this second surface; And
One bore portions, be to become a mandarin between part and this diffusion part between this, wherein, several of these several filling orifices become a mandarin gas passage partly from the past centre shortening of the edge of this gas distribution plate, and wherein, several diffusion parts of these several filling orifices have the identical gas passage of essence.
16. substrate processing apparatus as claimed in claim 10, wherein, the recess shapes of this second surface has an elliptic arc shape or several terraced portion shapes.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080065816 | 2008-07-08 | ||
| KR20080065816 | 2008-07-08 | ||
| KR1020090053463 | 2009-06-16 |
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| Publication Number | Publication Date |
|---|---|
| CN101624722A true CN101624722A (en) | 2010-01-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910140179A Pending CN101624722A (en) | 2008-07-08 | 2009-07-08 | Gas distributing plate and apparatus for treating substrate including the same |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101562327B1 (en) |
| CN (1) | CN101624722A (en) |
| TW (1) | TWI525212B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104878365A (en) * | 2015-05-21 | 2015-09-02 | 沈阳拓荆科技有限公司 | Cavity backfill gas dispersing device for vapor-deposited film equipment |
| CN104878366A (en) * | 2015-05-21 | 2015-09-02 | 沈阳拓荆科技有限公司 | Chamber backfill gas dispersion device for vapor deposition film equipment |
| CN107083542A (en) * | 2016-02-15 | 2017-08-22 | 三星显示有限公司 | plasma deposition apparatus |
| CN107587117A (en) * | 2017-08-16 | 2018-01-16 | 武汉华星光电半导体显示技术有限公司 | A kind of gas diffuser |
| CN108277478A (en) * | 2012-05-29 | 2018-07-13 | 周星工程股份有限公司 | Base plate processing device and base plate processing method |
| CN110468390A (en) * | 2019-08-02 | 2019-11-19 | 北方夜视技术股份有限公司 | The method of super large draw ratio microchannel plate vias inner walls preparation functional film layer |
| CN112522682A (en) * | 2020-11-03 | 2021-03-19 | 鑫天虹(厦门)科技有限公司 | Atomic layer deposition apparatus and process |
| CN114737172A (en) * | 2022-04-21 | 2022-07-12 | 成都高真科技有限公司 | Chemical vapor deposition device |
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| KR102132295B1 (en) * | 2013-11-28 | 2020-07-09 | 주성엔지니어링(주) | Gas distributing plate, and reaction chamber including the same, and apparatus treating substrate including the same |
| KR102634044B1 (en) * | 2016-09-06 | 2024-02-06 | 주성엔지니어링(주) | Apparatus for Distributing Gas and Apparatus for Processing Substrate |
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| KR102102202B1 (en) * | 2018-11-07 | 2020-04-21 | 세메스 주식회사 | Apparatus and system for treating substrate |
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- 2009-07-08 TW TW098123068A patent/TWI525212B/en active
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| US20020011215A1 (en) * | 1997-12-12 | 2002-01-31 | Goushu Tei | Plasma treatment apparatus and method of manufacturing optical parts using the same |
| CN1696768A (en) * | 2004-05-12 | 2005-11-16 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser hole design |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108277478A (en) * | 2012-05-29 | 2018-07-13 | 周星工程股份有限公司 | Base plate processing device and base plate processing method |
| CN108277478B (en) * | 2012-05-29 | 2020-03-20 | 周星工程股份有限公司 | Substrate processing apparatus and substrate processing method |
| CN104878365A (en) * | 2015-05-21 | 2015-09-02 | 沈阳拓荆科技有限公司 | Cavity backfill gas dispersing device for vapor-deposited film equipment |
| CN104878366A (en) * | 2015-05-21 | 2015-09-02 | 沈阳拓荆科技有限公司 | Chamber backfill gas dispersion device for vapor deposition film equipment |
| CN107083542A (en) * | 2016-02-15 | 2017-08-22 | 三星显示有限公司 | plasma deposition apparatus |
| CN107083542B (en) * | 2016-02-15 | 2019-09-17 | 三星显示有限公司 | Plasma deposition apparatus |
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| CN110468390A (en) * | 2019-08-02 | 2019-11-19 | 北方夜视技术股份有限公司 | The method of super large draw ratio microchannel plate vias inner walls preparation functional film layer |
| CN112522682A (en) * | 2020-11-03 | 2021-03-19 | 鑫天虹(厦门)科技有限公司 | Atomic layer deposition apparatus and process |
| CN112522682B (en) * | 2020-11-03 | 2022-05-27 | 鑫天虹(厦门)科技有限公司 | Atomic layer deposition apparatus and process |
| CN114737172A (en) * | 2022-04-21 | 2022-07-12 | 成都高真科技有限公司 | Chemical vapor deposition device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101562327B1 (en) | 2015-10-22 |
| TW201009112A (en) | 2010-03-01 |
| TWI525212B (en) | 2016-03-11 |
| KR20100006115A (en) | 2010-01-18 |
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