TW201009112A - Gas distribution plate and substrate treating apparatus including the same - Google Patents
Gas distribution plate and substrate treating apparatus including the same Download PDFInfo
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- TW201009112A TW201009112A TW098123068A TW98123068A TW201009112A TW 201009112 A TW201009112 A TW 201009112A TW 098123068 A TW098123068 A TW 098123068A TW 98123068 A TW98123068 A TW 98123068A TW 201009112 A TW201009112 A TW 201009112A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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Abstract
Description
201009112 六、發明說明： 【交叉參考之相關申請案】 [0001] 本案主張以下案件之優先權：於韓國申請之韓國專利申 請案第10-2008-0065816號及第10_2009_0053463號，申請日分別 為2008年7月8日及2009年6月16日；該等案件在此併入以供 參照。 【發明所屬之技術領域】 [0002] 本發明係有關於氣體分配板及包含此氣體分配板之美 板處理設備。 土 【先前技術】 [0003] / 一般而言，半導體裝置、顯示裝置、太陽能電池等係對 基板進行各式處理而製造出。舉例而言，要執行好幾次的薄膜沉 積，理及光微影處理、蝕刻處理來形成基板上的電路圖案，尚^ 執行額外處理，如清潔處理、黏接處理、切割處理等。在這二 理之中，沉積處理及蝕刻處理係在腔室型基板處理設備中進 為此，將反應氣體供應穿過設備的氣體分配板而到達基板之: 因而在基板上沉積或餘刻薄膜。 [〇〇°4}圖1係根據相關技藝而繪示基板處理設備的剖面圖， 圖2係根據相關技藝而繪示氣體分配板之變形的剖面圖。 =005]參照圖1，通常將PECVD(電漿加強化學氣相 f作為基板處理設備1〇。基板處理設備10包括腔 、g ^ =腔室蓋！2 ’並在内部設有反應空間E。基板= $置板14上，而加熱器28安裝於基板載置板14之中。$又板 板20將反應氣體朝向基板載置板14注入。邊緣框举？ = 7刀配 至11的内壁，並用以防止薄膜沉積在基板2的外岔友=腔 應管24將反應氣體供應至氣體分配板20。排氣口 2;°二=體供 應空間E中的反應氣體，並調節反應空間E中的真空。出反 201009112 [0006] 腔室蓋12連接至RF(無線射頻)電壓调n f C接地端’該腔室蓋及基板載置板分別作為上ί2ϊΐ ^據此，當反應氣體流入反應空間Ε時，^ 2 板14用以激活反應氣體。 盍12及基板載置201009112 VI. Invention Description: [Cross-Reference Related Application] [0001] This case claims the priority of the following cases: Korean Patent Application No. 10-2008-0065816 and No. 10_2009_0053463, filed in Korea, the application date is 2008 July 8, 2017 and June 16, 2009; these cases are hereby incorporated by reference. TECHNICAL FIELD OF THE INVENTION [0002] The present invention relates to a gas distribution plate and a sheet processing apparatus including the gas distribution plate. [Prior Art] [0003] In general, a semiconductor device, a display device, a solar cell, or the like is manufactured by performing various types of processing on a substrate. For example, it is necessary to perform several times of film deposition, lithography processing, and etching processing to form circuit patterns on the substrate, and perform additional processing such as cleaning processing, bonding processing, cutting processing, and the like. In this case, the deposition process and the etching process are performed in the chamber type substrate processing apparatus, and the reaction gas is supplied through the gas distribution plate of the apparatus to reach the substrate: thus depositing or leaving a film on the substrate . [Fig. 1] Fig. 1 is a cross-sectional view showing a substrate processing apparatus according to the related art, and Fig. 2 is a cross-sectional view showing a deformation of the gas distribution plate according to the related art. =005] Referring to Fig. 1, PECVD (plasma-enhanced chemical vapor phase f is generally used as the substrate processing apparatus 1). The substrate processing apparatus 10 includes a chamber, g^ = chamber cover! 2' and a reaction space E is provided therein. The substrate = $ on the plate 14, and the heater 28 is mounted in the substrate mounting plate 14. The additional plate 20 injects the reaction gas toward the substrate mounting plate 14. The edge frame is raised = 7 to the inner wall of the 11 And to prevent the film from being deposited on the outside of the substrate 2, the chamber should be supplied with a reaction gas to the gas distribution plate 20. The exhaust port 2; °2 = the reaction gas in the body supply space E, and adjust the reaction space E In the vacuum. In the case of 201009112 [0006] The chamber cover 12 is connected to the RF (Radio Frequency) voltage adjustment nf C ground terminal 'the chamber cover and the substrate mounting plate respectively as the upper ϊΐ2 ϊΐ ^ according to this, when the reaction gas flows into the reaction When the space is ,, the plate 2 is used to activate the reaction gas. 盍12 and substrate mounting
TrUfi配板-20包括複數個注入孔18。氣體分配板2〇 =兹Γ容峨氣體供應管24供應的反應氣體。基板4 [〇〇〇5 ΐϋ 載置板的設置係使其上、下移動。 ❻ =J ’邊緣框架26屏蔽助的外圍二基板載=4 板2之外圍區域的薄膜形成。 4 U而防止基 [0009] 安裝氣體供應管24,使其穿過胪宕荖 擋板(未緣示)安裝在容納空間中之對應體、刀用 ϊΕ中，俾排蚊應娜E巾岐聽體，_節反應空 Μ沾沉積在基板2上的薄膜必須要在整個基板2具有均勺的 ϊϊίί:將反應氣體均勻供應至基板2上，以及iiH西己 in與基板載置板14之間產生的電漿均勻性，會影塑均匂晟产 =素=====裝的均勻性“素， 性。換+之，=體刀板與基域置板14之_距離均等 :為均薄與膜基均板勻？板14之間的距離 2 3處理Ϊ進行將薄膜沉積在基板 ft的處理之後’反應空間E的溫度必須增高 設於腔室;應° _溫度增高，裝 配板2〇雜睡ίΐ板會膨脹。如圖2所示’當氣體分 y又夸氣體分配板20會因氣體分配板的重量作用而下 201009112 氣換 ===== ，隨著基板2及氣體分配板20的尺寸增大，為了 ,不裝置或太陽能電池’氣體分配板20的下垂變形更 八^：m t供應至基板2上的反應氣體密度’以及介於氣體 Γρ靜俱/发t板載置板14之間的電衆密度，並非為均勻，因此 ΙΞίϋΐ2的薄M沉積均勻性。再者，當侧基板2上的 ί效i更S 刻均句性。因此，薄膜的均勻性會劣化，生 【發明内容】 ^此’本發明為氣體分_及包含錢體分配板的基板 。本發明將會消除相關技藝之限制及缺點所造成的-或 多個問題。 本ΐ明所提供的氣齡配板聽含此㈣分配板的基 板處理狄備，其優點為能改善薄膜的均勻性及生產效率。 [00^5]本發明之額外特徵及優點將於以下敘述，其部分將從說 日了解’或可由實施本發明而知悉。本發明之目的及i他優 下實施方式、_巾請專利範圍及圖式中特別提及之結 構及万法而更加明白。 [00!6]為了達成該等與其他優點’並依據如在此以實施例說明 ^廣泛描述之本發_目的’本發日料—氣體分配板，安裝於設 ^反應空間的腔室巾，將反應氣體供應至載置於基板載置板上的 ^上，其中職體分配板包括1—及第二表面，其相向配置， 八中，該第二表面朝向該基板載置板，並具有一凹 =弋孔’各該注人孔包括：—人流部分’從該第—表面^ ^第-表面延伸’·-擴散部分，從該第二表面朝向該第一表面延 伸，及一孔口部分，係介於該入流部分與該擴散部分之間，其中， 該複數做人孔之複數個人流部分的氣體通道從該氣體分板的 201009112 丨擴散部分具 其中’該複數個注入孔之複數個： 有實質相同的氣體通道。 [0017] 在另一實施態樣中，一基板處理設備包含：一 空間；—基板載置板，位於該反應空間，其中某= ，二該基板載置板上；及—氣體分配板，位土 ，分配板包括：第一及第二表面，其相向配置，其；= f面朝向該基板錢板，並具有1 ^了 r™: ；：r ? 擴政邛刀，從該第一表面朝向該第一表面延伸；及一丨口 ，係介於該入流部分與該擴散部分之間，其中，該複 入孔之複數個人流部分的㈣通道從該氣體分配板的邊緣 =體ίί中，該複數個注人孔之複數個擴散部分具有實質相同 [0018] 冑了解到’前述總括性的描述及後續詳細描述為例示性 及解釋性的，其僅對所請發明提出進一步的說明。 【實施方式】 [0030] 茲參照隨附圖式而詳細敘述本發明之實施例。 [00^1]圖3係根據本發明之第一實施例而繪示基板處理設備 〇 之氣體分配板及基板載置板的剖面圖，而圖4及圖5係根據本發 明之第一實施例而分別繪示氣體分配板之頂部及底部表面的 圖。 [0032] 參照圖3至圖5，第一實施例之基板處理設備中，氣體 分配板200包括第一表面2〇1(稱作頂部表面）、第二表面2〇3(稱作 底部表面)及第一及第二侧表面205及207。第一表面201可平行 於基板載置板114。第二表面203朝向基板載置板114，其並具有 凹部形狀’如含凹面的凹部形狀。氣體分配板2〇〇具有複數個注 入孔210，將反應氣體朝向載置在基板載置板114上之基板1〇2注 入。氣體分配板200及基板載置板114位於設有反應空間(未繪示) 的腔室(未繪示）中。氣體分配板2〇〇及基板載置板114可具有在平 201009112 面上實質相同的形狀，如圓形或矩形形狀。 [0033]各注入孔210可包括入流部分214、孔口部分212及擴 ，部分216。入流部分214及擴散部分216分別作為注21〇 的入口及出口。 =4]人流部分2!4從第-表面2〇1朝向第二表面2〇3延伸。 攸外部供應的反應氣體會流入入流部分214中。孔口部分212组 入流部分214通連’且其直徑可小於入流部分214的直徑。擴散 4分216與孔口部分212通連，並延伸至第二表面2〇3，將反應氣 體朝，基=置板114供應。複數恤人孔2料在氣體分配板 200上以實質相同的間隔均勻地分佈。 在基板102上沉積或姓刻薄膜，將反應氣體供應至 腔至的反應工間’而腔室内的溫度會增高到約攝氏200或500度。 據此，氣體分配板200會熱膨脹，並在氣體分配板2〇〇的重量作 ，下而下垂。如糊技術所描述，若氣體分配板為平坦的，介於 氣體分配板與基板載置板之間的距離便不會為均等，會從邊緣往 中間減小。 [0036] 然而，第一實施例之氣體分配板200在第二表面2〇3上 具有含凹面之凹部形狀，以補償因氣體分配板2〇〇下垂 距，不均等性。換言之，在基板102上沉積或_薄膜之前成二 於氣體分配板與基板載置板m之間的距離從邊緣往中間減 小。舉例而言，在邊緣的距離Dedg小於在中間的距離Dcen。而 後，當在基板102上沉積或勉刻薄膜時，氣體分配板2〇 係因氣體分配板200的熱膨脹所導致。然而，因事先考 八 配板200的下垂’第二表面203具有含凹面之凹部形狀。據二 即使氣體分配板200下垂，第二表面2〇3之具有含凹面之带 狀的結構能補償因下垂所造成的不均等距離。因此，介於 ( 配板200與基板載置板114之間的距離能實質上為全部均等。^ 例而言，在處理基板102期間之位於邊緣的距離D，edg合 同於在處理基板102期間之位於中間的距離D，cen。 θ、、 [0037] 糊而言’第二表面203可藉由製備具有平坦第二表面 201009112 的氟體分配板而形成，接著，其於眚給气 =之平坦第二表面的向Ϊ4:;驗 ^凹面之第二表面203。當處理平坦第二表面時弟亦^ 3 >脹所造成平坦第二表面之向下凸出的體積。 …' [細]目為將第二表面2〇3形成為 祕會是均等 上不會影響反應氣體穿過注;下沉部分123實質 ❾ 罢4如上所述:第二表面203用以將介於氣體分配板200盥 ΐϊί置板 摘轉成為鱗，此纽善反應空間中反應 衆的密度均勻性。然、而，因擴散部分216之故= 體的畨度會因位置不同而改變。 應孔 1〇〇1〇]更詳細而言，擴散部分216的直徑從孔口 212增大第 ί 擴散部分216具有截錐形狀。複數個入ϊ 有貝質相同的高度’亦即’實質相同的第-氣體通道 同的分Γ具有實質相同的高度，亦即，實質相 的第一乳體通道L2。然而，因含凹部之第二表面朋之故 ❹ 固擴散部分21ό具有彼此不同的第三氣體通道13。換言之， =凹t第二表面2〇3之故，第三氣體通道L3從邊緣往中間減 者，因各擴散部分216具有截錐形狀，複數個擴散部分216 此不同的直徑。換言之，擴散部分216的直徑從邊緣往中 m ^流ί分214藉由孔口部分212調節反應氣體的氣體流 丰及軋體流罝。直徑大於孔口部分212之直徑的擴散部分216，苴 =以將穿過入流部分214與孔口部分212的反應氣體擴散，並^ 應氣體均勻注入到基板102上。供應到基板1〇2上的反應氣體 ，、孔口部分212的直徑以及擴散部分216的容積成正比。^數個 ^流部分及孔口部分214及212分別具有實質相同的第一及第二 我體通道L1及L2。然而’複數個擴散部分216具有彼此不同的 201009112The TrUfi plate 20 includes a plurality of injection holes 18. The gas distribution plate 2 〇 = the reaction gas supplied from the gas supply pipe 24 . Substrate 4 [〇〇〇5 ΐϋ The placement of the mounting plate is such that it moves up and down. The ❻ = J 'edge frame 26 shields the outer peripheral two substrate carrier = 4 film 2 peripheral film formation. 4 U and the prevention base [0009] The gas supply pipe 24 is installed so as to be installed in the corresponding body in the accommodating space through the damper baffle (not shown), and the sputum is sputum. The listener, the reaction film deposited on the substrate 2 must have a uniform spoon on the entire substrate 2, and uniformly supply the reaction gas to the substrate 2, and the iiH and the substrate mounting plate 14 The uniformity of plasma generated between the two will produce the uniformity of the product = prime ===== uniformity of the product. "Yes, sex. Change +, = the distance between the body blade and the base plate 14 is equal: For the thin film and the film-based uniform plate, the distance between the plates 14 is 2 3, and the film is deposited on the substrate ft. The temperature of the reaction space E must be increased in the chamber; the temperature should be increased and assembled. Plate 2 is noisy, and the plate will expand. As shown in Figure 2, 'When the gas is divided into y, the gas distribution plate 20 will be replaced by the weight of the gas distribution plate. 201009112 Gas exchange =====, with the substrate 2 and The size of the gas distribution plate 20 is increased, so that the sagging deformation of the gas distribution plate 20 is not provided or the solar cell is supplied to the substrate 2 The density of the reaction gas 'and the density of the electricity between the gas 静 静 / 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 i is more S-sequential. Therefore, the uniformity of the film may be degraded, and the present invention is a gas component and a substrate containing a body distribution plate. The present invention will eliminate the limitations of the related art and Disadvantages caused by - or a number of problems. The gas age board provided by the present invention listens to the substrate processing of the (4) distribution plate, which has the advantage of improving the uniformity and production efficiency of the film. [00^5] The additional features and advantages of the present invention will be set forth in the description which follows in the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The structure and the method mentioned are more clearly understood. [00! 6] In order to achieve these and other advantages, and according to the present invention as described herein by way of example, the present invention has been widely described. , installed in a chamber towel set in the reaction space, The reaction gas is supplied to a substrate placed on the substrate mounting plate, wherein the body distribution plate includes a first surface and a second surface disposed opposite to each other, and the second surface faces the substrate mounting plate and has a Each of the injection holes includes: a flow portion 'extending from the first surface ^ ^ first surface', a diffusion portion extending from the second surface toward the first surface, and an aperture portion Between the inflow portion and the diffusing portion, wherein the plurality of gas passages of the plurality of individual flow portions of the manhole are from the 201009112 丨 diffusion portion of the gas sub-plate having a plurality of the plurality of injection holes: [0017] In another embodiment, a substrate processing apparatus includes: a space; a substrate mounting plate, located in the reaction space, wherein a =, two substrate mounting plates; And a gas distribution plate, the soil, the distribution plate comprises: first and second surfaces, which are arranged opposite each other; the = f face faces the substrate, and has 1 ^ rTM: ;: r ? a knife from the first surface toward the first a surface extension; and a mouthpiece between the inflow portion and the diffusion portion, wherein the (four) channel of the plurality of individual flow portions of the return hole is from the edge of the gas distribution plate = body ίί, the plurality of The plurality of diffusing portions of the manhole are substantially identical. [0018] The foregoing description of the present invention and the following detailed description are to be considered as illustrative and illustrative, [Embodiment] [0030] Embodiments of the present invention will be described in detail with reference to the accompanying drawings. [001] FIG. 3 is a cross-sectional view showing a gas distribution plate and a substrate mounting plate of a substrate processing apparatus according to a first embodiment of the present invention, and FIGS. 4 and 5 are the first embodiment according to the present invention. The figures of the top and bottom surfaces of the gas distribution plate are shown separately. Referring to FIGS. 3 to 5, in the substrate processing apparatus of the first embodiment, the gas distribution plate 200 includes a first surface 2〇1 (referred to as a top surface) and a second surface 2〇3 (referred to as a bottom surface). And first and second side surfaces 205 and 207. The first surface 201 can be parallel to the substrate mounting plate 114. The second surface 203 faces the substrate mounting plate 114 and has a concave shape such as a concave-shaped concave shape. The gas distribution plate 2 has a plurality of injection holes 210, and the reaction gas is injected toward the substrate 1〇2 placed on the substrate placement plate 114. The gas distribution plate 200 and the substrate loading plate 114 are located in a chamber (not shown) provided with a reaction space (not shown). The gas distribution plate 2 and the substrate loading plate 114 may have substantially the same shape on a flat surface 201009112, such as a circular or rectangular shape. Each injection hole 210 may include an inflow portion 214, an orifice portion 212, and a flared portion 216. The inflow portion 214 and the diffusing portion 216 serve as the inlet and outlet of the note 21, respectively. = 4] The flow portion 2! 4 extends from the first surface 2〇1 toward the second surface 2〇3. The externally supplied reaction gas flows into the inflow portion 214. The orifice portion 212 sets the inflow portion 214 to be connected 'and its diameter may be smaller than the diameter of the inflow portion 214. The diffusion 4 minutes 216 is in communication with the orifice portion 212 and extends to the second surface 2〇3 to supply the reaction gas toward the base = plate 114. The plurality of shirt holes 2 are evenly distributed on the gas distribution plate 200 at substantially the same intervals. A film is deposited or imprinted on the substrate 102, and the reaction gas is supplied to the chamber to the chamber, and the temperature in the chamber is increased to about 200 or 500 degrees Celsius. Accordingly, the gas distribution plate 200 thermally expands and hangs down under the weight of the gas distribution plate 2〇〇. As described by the paste technique, if the gas distribution plate is flat, the distance between the gas distribution plate and the substrate carrier plate will not be equal and will decrease from the edge to the middle. [0036] However, the gas distribution plate 200 of the first embodiment has a concave-shaped concave shape on the second surface 2〇3 to compensate for the unevenness due to the pitch of the gas distribution plate 2. In other words, the distance between the gas distribution plate and the substrate mounting plate m before deposition or filming on the substrate 102 is reduced from the edge toward the middle. For example, the distance Dedg at the edge is less than the distance Dcen in the middle. Then, when the film is deposited or etched on the substrate 102, the gas distribution plate 2 is caused by thermal expansion of the gas distribution plate 200. However, the second surface 203 of the accommodating plate 200 has a concave shape including a concave surface. According to the second, even if the gas distribution plate 200 is drooped, the structure of the second surface 2〇3 having a concave band shape can compensate for the unequal distance caused by the sag. Therefore, the distance between the plate 200 and the substrate mounting plate 114 can be substantially equal. For example, the distance D at the edge during processing of the substrate 102 is contracted during the processing of the substrate 102. The distance D, cen in the middle. θ, [0037] The second surface 203 can be formed by preparing a fluorine distribution plate having a flat second surface 201009112, and then it is supplied to the gas The flat surface of the second surface is Ϊ4:; the second surface 203 of the concave surface is examined. When the flat second surface is treated, the volume is also caused by the downward convex volume of the flat second surface. The purpose of forming the second surface 2〇3 as a secret is that it does not affect the reaction gas passing through the injection equally; the sinking portion 123 is substantially as described above: the second surface 203 is used to be interposed between the gas distribution plates 200 盥ΐϊ 置 置 摘 摘 摘 摘 , , , , , , 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽 纽1]] In more detail, the diameter of the diffusing portion 216 increases from the orifice 212. The portion 216 has a truncated cone shape. The plurality of inlets have the same height as the shells, that is, the substantially identical first gas passages have the same height, that is, the first phase of the first emulsion passage L2. However, the solid diffusion portion 21 has a third gas passage 13 different from each other because of the second surface including the concave portion. In other words, = concave second surface 2〇3, the third gas passage L3 is from the edge to the middle In other words, since each of the diffusing portions 216 has a truncated cone shape, the plurality of diffusing portions 216 have different diameters. In other words, the diameter of the diffusing portion 216 is adjusted from the edge to the middle of the flow channel 214 by the orifice portion 212 to regulate the reaction gas. The gas flow and the rolling body flow. The diffusion portion 216 having a diameter larger than the diameter of the orifice portion 212, 苴 = diffuses the reaction gas passing through the inflow portion 214 and the orifice portion 212, and uniformly injects the gas into the substrate 102. The reaction gas supplied to the substrate 1〇2, the diameter of the orifice portion 212 and the volume of the diffusion portion 216 are proportional to each other. The plurality of flow portions and the orifice portions 214 and 212 have substantially the same first and First I passages L1 and L2. However, 'a plurality of diffusion portion 216 have mutually different 201009112
L U⑼阳同。举例而言，擴散 而介於複數個擴散部分216 第三备 <i# iS ^ T ^ ΊΙ .. 氣體 _2]參照圖4,位於氣體分配板2( 個入流部分214具有實質相同的直徑si 隔P1間隔開。參照圖5，複數個擴散4 • Sl，...，Sn’彼此並以不同的間隔pi”，pn 部份216的直徑從中間往邊緣增大，而 之間的間隔從中間往邊緣減小。L U (9) Yang Tong. For example, the diffusion is between the plurality of diffusion portions 216, the third preparation <i#iS ^ T ^ ΊΙ .. gas_2], referring to FIG. 4, located on the gas distribution plate 2 (the inflow portions 214 have substantially the same diameter) Si is spaced apart by P1. Referring to Fig. 5, a plurality of diffusions 4 • Sl, ..., Sn' are mutually spaced at different intervals pi", and the diameter of the pn portion 216 increases from the middle to the edge, and the interval therebetween Decrease from the middle to the edge.
此，介於氣體分配板200與基板載置板114之間反1 均勻的，因而會使在基板102上將薄膜均勻 [0044] 為了解決此問題，茲提出第二實施例，如下述。 [0045] ® 6係根據本發明之第二實施例而繪示基板處理設備 的剖面圖，而圖7係根據本發日月之第二實施例鱗錢體分配板 及基板載置板的剖面圖。圖8係根據本發明之第二實施例而放大 繪示一部分氣體分配板的剖面圖。圖9及圖10係根據本發明之第 二實施例而分別繪示氣體分配板之頂部及底部表面的剖面圖。茲 © 將省略本實施例中與第一實施例相似元件的敘述。 [0046] 參照圖6至圖10，第二實施例之基板處理設備11〇包 括腔室1Π ’該腔室包括腔室蓋112，並在其内部設有反應空間Ε。 基板載置板114位於反應空間Ε，且基板1〇2载置於基板載置板 114上。加熱器128安裝於基板載置板114中，以加熱基板1〇2。 氣體分配板200將反應氣體朝向基板載置板114供應。邊緣框架 126密接在腔室111的内壁之上’其用以防止薄膜沉積在基板1〇2 的外圍區域。氣體供應管124供應反應氣體。排氣口 122調節反 應空間Ε中的反應氣體，以及反應空間Ε中的真空。 10 201009112 置;in至盍112連接至财(無線射頻)電壓源113,且基板載 及下雷搞、至接地端，該腔室蓋及基板載置板分別作為上電極 其據此，當反應氣體流入反應空間Ε時，腔室蓋112及 土扳載置板114用以激活反應氣體。 ㈣分配板雇包括複數個注入孔31G。氣體分配板勘 宮芸112耦合，而容納空間形成在介於氣體分配板200與腔 6 之間，該容納空間並用以容納供應自氣體供應管124的 :氣體。基板載置板114向下移動來承載/卸載基板102，其並 ΟThus, the gas distribution plate 200 and the substrate mounting plate 114 are uniformly uniform, so that the film is uniform on the substrate 102. [0044] In order to solve this problem, a second embodiment is proposed, as described below. [0045] ® 6 is a cross-sectional view of a substrate processing apparatus according to a second embodiment of the present invention, and FIG. 7 is a cross section of a scale body distribution plate and a substrate mounting plate according to the second embodiment of the present invention. Figure. Figure 8 is a cross-sectional view showing a portion of a gas distribution plate in an enlarged manner in accordance with a second embodiment of the present invention. 9 and 10 are cross-sectional views showing the top and bottom surfaces of a gas distribution plate, respectively, in accordance with a second embodiment of the present invention. The description of elements similar to those of the first embodiment in this embodiment will be omitted. 6 to 10, the substrate processing apparatus 11 of the second embodiment includes a chamber 1', which includes a chamber cover 112, and a reaction space 设有 is provided therein. The substrate mounting plate 114 is located in the reaction space Ε, and the substrate 1〇2 is placed on the substrate mounting plate 114. The heater 128 is mounted in the substrate mounting plate 114 to heat the substrate 1〇2. The gas distribution plate 200 supplies the reaction gas toward the substrate mounting plate 114. The edge frame 126 is in close contact with the inner wall of the chamber 111 to prevent the film from being deposited on the peripheral region of the substrate 1〇2. The gas supply pipe 124 supplies a reaction gas. The exhaust port 122 regulates the reaction gas in the reaction space , and the vacuum in the reaction space Ε. 10 201009112; in to 盍 112 is connected to the financial (radio frequency) voltage source 113, and the substrate carries the lower and the ground, and the chamber cover and the substrate mounting plate serve as the upper electrodes respectively, according to which When the gas flows into the reaction space, the chamber cover 112 and the soil loading plate 114 are used to activate the reaction gas. (4) The distribution board employs a plurality of injection holes 31G. The gas distribution plate is coupled to the chamber 112, and the accommodation space is formed between the gas distribution plate 200 and the chamber 6, and the accommodation space is for containing the gas supplied from the gas supply pipe 124. The substrate mounting plate 114 moves downward to carry/unload the substrate 102, which is
Hi動來形成或侧基板102上的薄膜。換言之，基板載置板 114用以向上、下移動。 +邊緣框架126固定於腔室111的内壁。當基板載置板114 移& ’邊緣框架126屏蔽了基板102的外圍區域。因此防止 溥膜形成在基板102的外圍區域。 f050],女裝氣體供應管124,使其穿過腔室蓋112的中間部 分。擋板(未繪示)安裝在容納空間中之對應氣體供應管 124的位 置，並用以均勻分配來自氣體供應管124的反應氣體。排氣口 122 與真空栗(未繪示)搞合’俾將反應空間E中的反應氣體排出，或調 節反應空間E中的真空。 [2〇51] 氣體分配板200包括第一表面201(稱作頂部表面）、第 一表面2〇3(稱作底部表面)及第一及第二侧表面205及207。第一 表面201可與基板載置板U4平行。第二表面2〇3朝向基板載置 板114 ’並具有凹部形狀，如含凹面之凹部形狀。 [0052] 氣體分配板200具有複數個注入孔31〇，將反應氣體注 入到載置在基板載置板114上的基板1〇2上。氣體分配板及 基板載置板114位於反應空間E。氣體分配板200及基板載置板 114可具有在平面上實質相同的形狀，如圓形或矩形形狀。 [0053] 各注入孔310可包括入流部分314、孔口部分312及擴 散部分316。入流部分314及擴散部分316分別作為注入孔31〇 的入口及出口。 [0054] 入流部分314從第一表面201朝向第二表面203延伸。 11 201009112 從外部供應的反應氣體流入入流部分314中。孔口部分312與入 流部分314通連，且其直徑可小於入流部分314的直徑。擴散部 分316與孔口部分312通連，並延伸至第二表面203，將反應氣體 注入到基板載置板114上。複數個注入孔310可在氣體分配板200 上以實質相同的間隔均勻地分佈。 [0055] 在處理基板102之前’介於氣體分配板200與基板載置 板114之間的距離從邊緣往中間增大。舉例而言，在邊緣的距離Hi moves to form a film on the side substrate 102. In other words, the substrate loading plate 114 is used to move up and down. The edge frame 126 is fixed to the inner wall of the chamber 111. When the substrate mounting plate 114 is moved & the edge frame 126 shields the peripheral region of the substrate 102. Therefore, the ruthenium film is prevented from being formed in the peripheral region of the substrate 102. F050], the women's gas supply tube 124 is passed through the intermediate portion of the chamber cover 112. A baffle (not shown) is installed at a position of the corresponding gas supply pipe 124 in the accommodating space, and is used to uniformly distribute the reaction gas from the gas supply pipe 124. The exhaust port 122 is engaged with a vacuum pump (not shown) to discharge the reaction gas in the reaction space E or to adjust the vacuum in the reaction space E. [2〇51] The gas distribution plate 200 includes a first surface 201 (referred to as a top surface), a first surface 2〇3 (referred to as a bottom surface), and first and second side surfaces 205 and 207. The first surface 201 may be parallel to the substrate mounting plate U4. The second surface 2〇3 faces the substrate mounting plate 114' and has a concave shape such as a concave-containing concave shape. The gas distribution plate 200 has a plurality of injection holes 31, and the reaction gas is injected onto the substrate 1〇2 placed on the substrate mounting plate 114. The gas distribution plate and the substrate loading plate 114 are located in the reaction space E. The gas distribution plate 200 and the substrate loading plate 114 may have substantially the same shape in a plane, such as a circular or rectangular shape. Each of the injection holes 310 may include an inflow portion 314, an orifice portion 312, and a diffusion portion 316. The inflow portion 314 and the diffusion portion 316 serve as inlets and outlets of the injection holes 31, respectively. [0054] The inflow portion 314 extends from the first surface 201 toward the second surface 203. 11 201009112 The reaction gas supplied from the outside flows into the inflow portion 314. The orifice portion 312 is in communication with the inflow portion 314 and may have a smaller diameter than the inflow portion 314. The diffusing portion 316 is in communication with the orifice portion 312 and extends to the second surface 203 to inject a reaction gas onto the substrate mounting plate 114. A plurality of injection holes 310 may be evenly distributed at substantially the same intervals on the gas distribution plate 200. [0055] Before the substrate 102 is processed, the distance between the gas distribution plate 200 and the substrate mounting plate 114 increases from the edge toward the middle. For example, the distance at the edge
Dedg小於在中間的距離Dcen。而後，當處理基板1〇2時，氣體分 配板200會下垂，因此介於氣體分配板2〇〇與基板載置板114之 間的距離變成均等。舉例而言，在處理基板1〇2期間之位於邊緣Dedg is smaller than the distance Dcen in the middle. Then, when the substrate 1〇2 is processed, the gas distribution plate 200 sag, so that the distance between the gas distribution plate 2〇〇 and the substrate placing plate 114 becomes uniform. For example, at the edge during the processing of the substrate 1〇2
的距離D，edg會實質相同於在處理基板102期間之位於中間的距 離 D’cen。 [0056] 入流部分314具有約為數微米的直徑，其並藉由孔口部 分312調節氣體流率及氣體流量。直徑大於孔口部分312之直徑 的，散部分316,其用以將穿過入流部分314與孔口部分312的反 應氣體擴散，並將反應氣體均勻注入到基板1〇2上。供應到基板 102上的反應氣體與孔口部分312的直徑以及擴散部分^的^積 成正比。在第二實施例中，複數個擴散部分316具有實質相同的 容積，俾使反應氣體均勻分配在基板1〇2上。 、The distance D, edg will be substantially the same as the distance D'cen in the middle during processing of the substrate 102. [0056] The inflow portion 314 has a diameter of about a few microns and is adjusted by the orifice portion 312 for gas flow rate and gas flow. The diffusing portion 316 having a diameter larger than the diameter of the orifice portion 312 serves to diffuse the reaction gas passing through the inflow portion 314 and the orifice portion 312, and uniformly injects the reaction gas onto the substrate 1〇2. The reaction gas supplied to the substrate 102 is proportional to the diameter of the orifice portion 312 and the diffusion portion. In the second embodiment, the plurality of diffusion portions 316 have substantially the same volume, so that the reaction gas is uniformly distributed on the substrate 1〇2. ,
=57]入流部分314從第一表面21〇延伸至對應的孔口部； 312。複數個孔口部分312以實質相同的形狀設置成第二表面 形狀。據此’人流部分314的高度從中間往邊緣增大。^ :圖8 ’二個相鄰的人流部分314具有三個彼 ^ 氣體通道im至ID3。換言之，入流部分 體、、L1通常從中間往邊緣增大：。 複數個孔口部分312及複數個擴散部分316盘第二表a i Jr，’複數個孔口部分312具有實質相同的第二氣約 Π參照圖9 ’當從第—表面2〇1 時，複數個入流部分314具有實質相同的直徑si，彼此並以實1 12 201009112 相同的間隔pi間隔開。然而，參照圖7,當從第二表面2〇3 複數個入流部分314 b寺，複數個入流部分看起來彼此由不同間隔 間隔開’如不同的間隔P1’及P1，，。 [0060] 參照圖1〇’當從第二表面203觀察複數個擴散部分加 時，複數個擴散部分316具有實質相同的直徑S2，彼此以 同的間隔P2間隔開。因為含凹面之第二表面2〇3的剖面可以具 如橢圓弧的形狀，且各擴散部分316的中央軸線垂直於基板&= 57] The inflow portion 314 extends from the first surface 21A to the corresponding aperture portion; The plurality of aperture portions 312 are disposed in a substantially identical shape to a second surface shape. Accordingly, the height of the 'flow portion 314 increases from the middle to the edge. ^ : Fig. 8 'Two adjacent flow portions 314 have three gas passages im to ID3. In other words, the inflow part, L1, usually increases from the middle to the edge: The plurality of aperture portions 312 and the plurality of diffusion portions 316 are in the second table ai Jr, 'the plurality of aperture portions 312 have substantially the same second gas. Referring to FIG. 9' when from the first surface to the second surface, the plural The inflow portions 314 have substantially the same diameter si, spaced apart from one another by the same spacing pi of real 1 12 201009112. However, referring to Fig. 7, when a plurality of inflow portions 314b are formed from the second surface 2?3, the plurality of inflow portions appear to be spaced apart from each other by different intervals such as different intervals P1' and P1. Referring to FIG. 1A, when a plurality of diffusion portions are observed from the second surface 203, the plurality of diffusion portions 316 have substantially the same diameter S2, which are spaced apart from each other by the same interval P2. Since the cross section of the concave second surface 2〇3 may have a shape like an elliptical arc, and the central axis of each diffusing portion 316 is perpendicular to the substrate &
板114’從第二表面203觀察的擴散部分316的面積會些微從中間 往邊緣增大。然而，此些微增大實質上不會影響從擴g部分3iB6 所注入之反應氣體量的變化。據此，便將複數個擴散部分316視 為具有實質相同的直徑S2，彼此並以實質相_間隔p2間隔開。 [0061] 如上所述’在第二實施例中，當氣體分配板2〇〇因熱膨 脹而下垂時’因為第二表面203具有含凹面之凹部形狀，將能補 償介於氣體分配板200與基板載置板114之間的距離非均等性。 ，者，因^複數個擴散部分316具有實質相同的氣體通道L3、直 徑S2及容積’反應氣體能均勻分配到整個基板1〇2上。 [0062] 帛-及第二實施例提供具有含凹面之第二表面的氣體 分配板，而下述第三實關提供具有梯㈣二表面的氣體分配板。 [00j3]圖11係根據本發明之第三實施例而繪示基板處理設備 之，體分配板的剖面圖’而圖12係根據本發明之第三實施例而繪 不氣體分配板之第二表面的平面圖。茲將省略本實施例中與第 一、第二實施例相似元件的敘述。 =4]參照圖10及圖！卜第三實施例之基板處理設備中氣 表面2gi(稱作頂部表面）、第二表面2〇3(稱 作底σ卩表面)及第-及第二側表面2G5及2G7。第一表面可與基板 載置板114平行。第二表面2〇3朝向基板載置板114，並具有凹部 形狀，如梯狀之凹部形狀。氣體分配板2〇〇具有複數個注入孔 ，，將反應氣體朝向載置在基板載置板114上之基板1〇2注入。 ，體分配板2GG及基板載置板m位於設有反應空間的腔室内。 氣體分配板及基板載置板m可具有在平面上實_同的形 13 201009112 狀’如圓形或矩形形狀。 ϋ〇65ΐ _第二表面203可包括複數個梯部，且梯部的數量不受 。在第二實施例中’假設第二表面203包括三個從如 緣之呈徑向方向的梯部。 』運 [=066]第二表面2〇3包括位於中間的第一梯部部分现 =-梯部部分350的第二梯部部分说及圍繞第二梯部部分固^ 位於邊緣的第二梯部部分354。在第一梯部部分35〇之 一：1、第二梯部部* 352之第二寬度m及第三梯部部们5 $ f寬度D3之間的關係為：D1>D2>D3。第一梯部部分％ ❿ 二=第二梯部部分352的厚度，且第二梯部部分352的厚度小 邊分354的厚度。梯部部分35G、352、354從中間往 11〇61\第一至第三梯部部分35〇、352、354的設置係較佳地使 第-梯部部分350的中心、第二梯部部分352的中心及第三 Γ分i54的:心皆由如第一及第二實施例之第二表面剖面忒橢 圓孤實質地穿過。第二及第三梯部部分352及354設置成以同心 圓方式環繞第-梯部部分35G。因為第—至第三梯部部分352、 352、354的中心對應到橢圓弧，第一梯部部分35〇的面積大於 二梯部部分352的面積，且第二梯部部分352的面 部部分354的面積。 ❹ [0068] 各注入孔410可包括入流部分414、孔口部分412及 散部分416。入流部分414及擴散部分416分別作為注入孔· 的入口及出口。 [0069] 人流部分414從第-表面201朝向第二表面2〇3延伸。 從外部供應的反應氣體流入入流部分414中。孔口部分412盥入 流部分414通連’其直徑可小於入流部分414的直徑。擴散^分 〒通連’並延伸至第二表面泌，將反應氣體注 ίί載板上。複數個注人孔可在氣體分配板2〇〇 上以實質相同的間隔分佈。 [0070] 人机分414從第-表面2〇1延伸到對應的孔口部分 14 201009112 412。複數個孔口部分412以實質相同的形狀設置成第二表面的梯 部形狀。據此，將複數個入流部分414分成三組，第一至第三組 分別對應到第一至第三梯部部分350、352、354。第一至第三部分 具有三個彼此不同的高度，即三個氣體通道ID1至1〇3。換言之， 入流部分314的第一氣體通道通常從中間往邊緣增大，即π)1 < ID2<ID3。第一組的孔口部分412具有實質相同的氣體通道ID1， 第二組的孔口部分412具有實質相同的氣體通道ID2,且第三組的 孔口部分412具有實質相同的氣體通道ID3。 [0071] 將複數個孔口部分412及複數個擴散部分416設置成與 第二表面2〇3平行。據此，複數個孔口部分412具有實質相同的The area of the diffusing portion 316 of the plate 114' as viewed from the second surface 203 may slightly increase from the middle to the edge. However, such slight increase does not substantially affect the change in the amount of the reactant gas injected from the expanded portion 3iB6. Accordingly, the plurality of diffusing portions 316 are regarded as having substantially the same diameter S2, spaced apart from each other by a substantial phase interval p2. [0061] As described above, 'in the second embodiment, when the gas distribution plate 2 sag due to thermal expansion', since the second surface 203 has a concave-shaped concave shape, it can compensate for the gas distribution plate 200 and the substrate. The distance between the mounting plates 114 is not uniform. Further, since the plurality of diffusion portions 316 have substantially the same gas passage L3, the diameter S2, and the volume 'reaction gas can be uniformly distributed to the entire substrate 1〇2. [0062] The 帛-and second embodiment provides a gas distribution plate having a second surface having a concave surface, and the third embodiment described below provides a gas distribution plate having a ladder (four) two surfaces. [0013] FIG. 11 is a cross-sectional view of a body distribution plate of a substrate processing apparatus according to a third embodiment of the present invention, and FIG. 12 is a second drawing of a gas distribution plate according to a third embodiment of the present invention. Plan view of the surface. The description of the elements similar to the first and second embodiments in this embodiment will be omitted. =4] Refer to Figure 10 and Figure! In the substrate processing apparatus of the third embodiment, the gas surface 2gi (referred to as the top surface), the second surface 2〇3 (referred to as the bottom σ卩 surface), and the first and second side surfaces 2G5 and 2G7. The first surface may be parallel to the substrate mounting plate 114. The second surface 2〇3 faces the substrate mounting plate 114 and has a concave shape such as a trapezoidal recess shape. The gas distribution plate 2A has a plurality of injection holes, and the reaction gas is injected toward the substrate 1〇2 placed on the substrate mounting plate 114. The body distribution plate 2GG and the substrate mounting plate m are located in a chamber in which a reaction space is provided. The gas distribution plate and the substrate mounting plate m may have a shape of a solid or the same shape as a plane, such as a circular or rectangular shape. The second surface 203 may include a plurality of steps, and the number of the ladders is not. In the second embodiment, it is assumed that the second surface 203 includes three steps from the rim in the radial direction. The second surface 2〇3 includes the first step portion in the middle, the second step portion of the ladder portion 350, and the second ladder portion that is fixed to the edge around the second step portion. Part 354. The relationship between the first width of the first step portion 35:1, the second width m of the second step portion 352, and the third step portion 5$f width D3 is: D1>D2>D3. The first step portion % ❿ 2 = the thickness of the second step portion 352, and the thickness of the second step portion 352 is smaller than the thickness of the edge portion 354. The arrangement of the step portions 35G, 352, 354 from the middle to the 11〇61\first to third step portions 35〇, 352, 354 preferably makes the center of the first step portion 350 and the second step portion The center of 352 and the third point i54: the heart is substantially passed through by the elliptical ellipse as in the second surface section of the first and second embodiments. The second and third step portions 352 and 354 are disposed to surround the first step portion 35G in a concentric manner. Since the centers of the first to third step portions 352, 352, 354 correspond to the elliptical arc, the area of the first step portion 35A is larger than the area of the second step portion 352, and the face portion 354 of the second step portion 352. Area. [0068] Each of the injection holes 410 may include an inflow portion 414, an orifice portion 412, and a diffusing portion 416. The inflow portion 414 and the diffusion portion 416 serve as inlets and outlets of the injection holes, respectively. [0069] The flow portion 414 extends from the first surface 201 toward the second surface 2〇3. The reaction gas supplied from the outside flows into the inflow portion 414. The orifice portion 412 is entangled into the flow portion 414 and has a diameter that is smaller than the diameter of the inflow portion 414. Diffusion 分 〒 ’ and extend to the second surface, and the reaction gas is injected onto the carrier. A plurality of injection holes may be distributed at substantially the same intervals on the gas distribution plate 2''. [0070] The human machine segment 414 extends from the first surface 2〇1 to the corresponding aperture portion 14 201009112 412. The plurality of aperture portions 412 are disposed in substantially the same shape as the stepped shape of the second surface. Accordingly, the plurality of inflow portions 414 are divided into three groups, and the first to third groups correspond to the first to third ladder portions 350, 352, 354, respectively. The first to third portions have three different heights from each other, that is, three gas passages ID1 to 1〇3. In other words, the first gas passage of the inflow portion 314 generally increases from the middle to the edge, i.e., π) 1 < ID2 < ID3. The orifice portion 412 of the first group has substantially the same gas passage ID1, the orifice portion 412 of the second group has substantially the same gas passage ID2, and the orifice portion 412 of the third group has substantially the same gas passage ID3. [0071] The plurality of aperture portions 412 and the plurality of diffusion portions 416 are disposed in parallel with the second surface 2〇3. Accordingly, the plurality of aperture portions 412 have substantially the same
第二氣體通道，且複數個擴散部分416具有實質相同的第三氣體 通道。 [0072] 注入孔418藉由孔口部分412調節氣體流率及氣體流 量。直徑大於孔口部分412之直徑的擴散部分416，其用以將穿過 入流部分414及孔口部分412的反應氣體擴散，並將反應氣體均 勻注入到基板102上。供應到基板102上的反應氣體與孔口部分 412的直徑及擴散部分416的容積成正比。第三實施例係相似於第 二實施例，複數個擴散部分416具有實質相同的容積，俾使反應 氣體均勻分佈在基板102上。 [0073] 在第三實施例中，為了簡化氣體分配板的製造，可分開 製造第-至第三梯部部分3SG、3S2、354，而後將其組合。當分開 製造第-至第三梯部部分35〇、352、354時，能減少生產時間與 [0074]如上述實關，簡氣齡配板的底部絲具有凹 狀’即使發生熱膨服’仍能獲得介於氣體分配板鱼 間的均等麟’且能改善反縣雜賴的㈣性。㈣置板之 ϋ當複數鋪散部分具有實f相同的氣體通道時， ·板上。據此，便缺勻地在基板上沉 [0076]又，當氣體分配板的底部表面具有梯部雜時，能簡化 15 201009112 氣體分配板的製程。 明之精神與範圍的情況下，能對本發明進行各種修改及變化 [0077] 本技術領域中具有通常知識者將能明白’在不偏離本發 因 此 ，若此等修改及變化落入隨附申請專利範圍的範圍及直 物，本發明欲將其涵蓋。 … 【圖式簡單說明】 =019]在此包含之隨附圖式係協助提供本發明之更詳細的解 釋’其在此併人後為本制書的—部分，並綱本發明 與發明說明_解讀時’麟釋本發g月之發明要旨。在圖式中： ❿ [0020] g] 1係根據相關技藝而繪示基板處理設備的剖面圖； [=021] @ 2係根據相關技藝而繪示氣體分配板之變形面 圖； 之氣i分配I及圖實施例而繪示基板處理設備 侧咖繪示氣體 U圖；圖6係根據本發明之第二實施例而繪示基板處理設備The second gas passage, and the plurality of diffusing portions 416 have substantially identical third gas passages. [0072] The injection hole 418 regulates the gas flow rate and the gas flow rate through the orifice portion 412. A diffusion portion 416 having a diameter larger than the diameter of the orifice portion 412 serves to diffuse the reaction gas passing through the inflow portion 414 and the orifice portion 412, and uniformly injects the reaction gas onto the substrate 102. The reaction gas supplied to the substrate 102 is proportional to the diameter of the orifice portion 412 and the volume of the diffusion portion 416. The third embodiment is similar to the second embodiment in that a plurality of diffusion portions 416 have substantially the same volume so that the reaction gas is uniformly distributed on the substrate 102. In the third embodiment, in order to simplify the manufacture of the gas distribution plate, the first to third step portions 3SG, 3S2, 354 may be separately manufactured and then combined. When the first to third step portions 35, 352, and 354 are separately manufactured, the production time can be reduced and [0074] as described above, the bottom wire of the simplified gas-aged plate has a concave shape even if thermal expansion occurs. Obtaining the equalization between the fish in the gas distribution plate and improving the (four) nature of the anti-county miscellaneous. (4) When the board is stacked, the plurality of paved parts have the same gas passage as the real f. According to this, the substrate is suspended in a uniform manner. [0076] Further, when the bottom surface of the gas distribution plate has a step portion, the process of the gas distribution plate of 15 201009112 can be simplified. Various modifications and changes can be made to the present invention in the context of the spirit and scope of the invention. [0077] Those having ordinary skill in the art will understand that, without departing from the present invention, if such modifications and changes fall within the accompanying application The scope and scope of the scope are intended to be covered by the present invention. BRIEF DESCRIPTION OF THE DRAWINGS [ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 _ Interpretation of the 'Lin Shiben's invention of g month. In the drawings: ❿ [0020] g] 1 is a cross-sectional view of the substrate processing apparatus according to the related art; [=021] @ 2 is a deformed surface diagram of the gas distribution plate according to the related art; A substrate U processing diagram is shown in the embodiment of the present invention, and FIG. 6 is a substrate processing apparatus according to a second embodiment of the present invention.
Q 據本㈣之第二實關祕轉體分配板及 [體分i板的根據本發明之第二實施例而放大繪示-部分氣 [二0又7西]己板之，二系根據本發明之第二實施例而分別繪示氣 體为配板之頂部及底部表面的剖面圖.According to the second embodiment of the present invention, the second embodiment of the body is divided into two parts according to the second embodiment of the present invention, and the second part is based on the second embodiment of the present invention. 2. The second embodiment of the present invention shows a cross section of the top and bottom surfaces of the gas plate.
[0028] 圖11係根據本發明夕笙_ ’也 仏_ w & 之氣體分配板_面圖；^之第二實施例而繪7"基板處理設備 [0029] 圖12係根據本發明笙_ 第二表面的平關。 仅弟二實施例而繪喊體分配板之 16 201009112 【主要元件符號說明】 2基板 10基板處理設備 II 腔室 12腔室蓋 13 電壓源 14基板載置板 18 注入孔 20 氣體分配板 22排氣口 ❿ 24氣體供應管 26 邊緣框架 28加熱器 102基板 110基板處理設備 III 腔室 112腔室蓋 113電壓源 114基板載置板 122排氣口 ® 123下沉部分 124氣體供應管 126 邊緣框架 128加熱器 200 氣體分配板 201 第一表面 203 第二表面 205 第一側表面 207 第二側表面 210 注入孔 201009112 212孔口部分 214 入流部分 216擴散部分 310 注入孔 312 孔口部分 314 入流部分 316擴散部分 350 第一梯部部分 352第二梯部部分 354第三梯部部分 410 注入孔 412 孔口部分 414入流部分 416擴散部分 D1〜D3 寬度[0028] FIG. 11 is a gas distribution plate according to the present invention, and is shown in the second embodiment of the present invention. FIG. 11 is a substrate processing apparatus according to a second embodiment of the present invention. [0029] FIG. _ The second surface is closed. Only the second embodiment and the body distribution plate 16 201009112 [Main component symbol description] 2 substrate 10 substrate processing equipment II chamber 12 chamber cover 13 voltage source 14 substrate mounting plate 18 injection hole 20 gas distribution plate 22 row Port ❿ 24 gas supply tube 26 edge frame 28 heater 102 substrate 110 substrate processing equipment III chamber 112 chamber cover 113 voltage source 114 substrate mounting plate 122 exhaust port® 123 sinking portion 124 gas supply tube 126 edge frame 128 heater 200 gas distribution plate 201 first surface 203 second surface 205 first side surface 207 second side surface 210 injection hole 201009112 212 orifice portion 214 inflow portion 216 diffusion portion 310 injection hole 312 orifice portion 314 inflow portion 316 Diffusion portion 350 first step portion 352 second step portion 354 third step portion 410 injection hole 412 aperture portion 414 inflow portion 416 diffusion portion D1 to D3 width
Dedg、Dcen、D’edg、D’cen 距離 E反應空間 ID1〜ID3 氣體通道 L1第一氣體通道 L2第二氣體通道 L3第三氣體通道 Ρ1，..·,Ρη 間隔 ΡΓ 間隔 Ρ1” 間隔Dedg, Dcen, D’edg, D’cen Distance E Reaction space ID1~ID3 Gas channel L1 First gas channel L2 Second gas channel L3 Third gas channel Ρ1,..·,Ρη Interval ΡΓ Interval Ρ1” Interval
Sl，...,Sn 直徑 18Sl,...,Sn diameter 18
Claims (1)
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| KR20080065816 | 2008-07-08 | ||
| KR1020090053463A KR101562327B1 (en) | 2008-07-08 | 2009-06-16 | Gas distributing plate and Apparatus for treating substrate including the same |
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| TW201009112A true TW201009112A (en) | 2010-03-01 |
| TWI525212B TWI525212B (en) | 2016-03-11 |
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| TWI700388B (en) * | 2016-11-29 | 2020-08-01 | 美商應用材料股份有限公司 | Integration of dual remote plasmas sources for flowable cvd |
| TWI817542B (en) * | 2022-03-14 | 2023-10-01 | 日商鎧俠股份有限公司 | Semiconductor manufacturing equipment |
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| KR102132295B1 (en) * | 2013-11-28 | 2020-07-09 | 주성엔지니어링(주) | Gas distributing plate, and reaction chamber including the same, and apparatus treating substrate including the same |
| CN104878365A (en) * | 2015-05-21 | 2015-09-02 | 沈阳拓荆科技有限公司 | Cavity backfill gas dispersing device for vapor-deposited film equipment |
| CN104878366A (en) * | 2015-05-21 | 2015-09-02 | 沈阳拓荆科技有限公司 | Chamber backfill gas dispersion device for vapor deposition film equipment |
| KR102558925B1 (en) * | 2016-02-15 | 2023-07-24 | 삼성디스플레이 주식회사 | The plasma deposition device |
| KR102634044B1 (en) * | 2016-09-06 | 2024-02-06 | 주성엔지니어링(주) | Apparatus for Distributing Gas and Apparatus for Processing Substrate |
| US20180090300A1 (en) * | 2016-09-27 | 2018-03-29 | Applied Materials, Inc. | Diffuser With Corner HCG |
| CN107587117B (en) * | 2017-08-16 | 2019-06-11 | 武汉华星光电半导体显示技术有限公司 | A kind of gas diffuser |
| US10876208B2 (en) | 2018-01-16 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for fabricating a semiconductor device |
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| CN110468390B (en) * | 2019-08-02 | 2021-06-29 | 北方夜视技术股份有限公司 | Method for preparing functional film on inner wall of microchannel plate channel with super-large length-diameter ratio |
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| US20020011215A1 (en) | 1997-12-12 | 2002-01-31 | Goushu Tei | Plasma treatment apparatus and method of manufacturing optical parts using the same |
| US8074599B2 (en) | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
| CN100386668C (en) * | 2004-05-12 | 2008-05-07 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser hole design |
| US20060005771A1 (en) * | 2004-07-12 | 2006-01-12 | Applied Materials, Inc. | Apparatus and method of shaping profiles of large-area PECVD electrodes |
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- 2009-06-16 KR KR1020090053463A patent/KR101562327B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI700388B (en) * | 2016-11-29 | 2020-08-01 | 美商應用材料股份有限公司 | Integration of dual remote plasmas sources for flowable cvd |
| TWI817542B (en) * | 2022-03-14 | 2023-10-01 | 日商鎧俠股份有限公司 | Semiconductor manufacturing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100006115A (en) | 2010-01-18 |
| CN101624722A (en) | 2010-01-13 |
| KR101562327B1 (en) | 2015-10-22 |
| TWI525212B (en) | 2016-03-11 |
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