CN114737172A - Chemical vapor deposition device - Google Patents
Chemical vapor deposition device Download PDFInfo
- Publication number
- CN114737172A CN114737172A CN202210418309.7A CN202210418309A CN114737172A CN 114737172 A CN114737172 A CN 114737172A CN 202210418309 A CN202210418309 A CN 202210418309A CN 114737172 A CN114737172 A CN 114737172A
- Authority
- CN
- China
- Prior art keywords
- gas
- vapor deposition
- chemical vapor
- perforated plate
- deposition apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Abstract
The invention discloses a chemical vapor deposition device which comprises a processing cavity, a gas nozzle and a heater, wherein the processing cavity is provided with a plurality of gas nozzles; the gas nozzle and the heater are arranged in the processing cavity, and the gas nozzle is externally connected with a gas inlet pipe; the wafer that treats sets up on the heater, the jet-propelled end of gas shower nozzle is equipped with the perforated plate, the perforated plate is sunken sphere column structure, just be equipped with a plurality of fumaroles on the perforated plate, each fumarole orientation is in the wafer setting. According to the chemical vapor deposition device, the perforated plate of the spray head is arranged to be of the concave spherical structure, so that the surface area of the air injection end is increased, the number of the air injection holes which can be arranged is increased, and the uniformity of a deposited film on a wafer is improved.
Description
Technical Field
The invention belongs to the field of semiconductor processing devices, and particularly relates to a chemical vapor deposition device.
Background
Conventionally, in a semiconductor manufacturing process, a chemical vapor deposition apparatus is often used during a semiconductor wafer manufacturing apparatus.
In general, in a semiconductor manufacturing process, various thin films on a semiconductor wafer and a thin film forming method having a conventional thin film forming method are formed by using one chemical vapor deposition method as a representative, using a method called a CVD (chemical vapor deposition) thin film forming method which is widely used.
The CVD method is a method in which a reaction gas is injected into a reaction chamber, to which a constant temperature and pressure can be applied depending on the conditions under which the resulting thin film is specified as a method for forming on a semiconductor wafer, and the chemical vapor deposition apparatus includes forming a thin film device on the surface of a wafer by using a method for forming a thin film device such as CVD.
In addition, the chemical vapor deposition apparatus can uniformly inject the reaction gas into the device so that a gas shower as an example of a configuration such as the gas shower shown in fig. 1 can be provided to the gas shower. The gas shower may be conventional.
Refer to fig. 1. Fig. 1 is a diagram showing the structure of a related art gas shower head.
As shown in fig. 1. As described above, in the conventional gas shower, the shower head includes the shower head body 11 of the perforated plate 12, and the shower head body 11 is connected by the cylindrical gas inlet pipe 13.
In addition, a plurality of exhaust holes 14 are formed below the perforated plate 12.
Accordingly, with this structure, as described above, the gas exhausted from the exhaust holes 14 is heated to be deposited on the semiconductor wafer 16 in a stationary state on the heater 15.
In this way, a thin film is formed on the surface of the semiconductor wafer 16 using CVD, but has the following difficulties due to a chemical vapor deposition apparatus such as a gas shower head of the related art.
In a CVD process of a Chemical Vapor Deposition method using a process gas in a semiconductor device, a process gas is jetted through a showerhead to deposit and form a thin film on a wafer.
In the conventional apparatus, a showerhead for a semiconductor CVD process is composed of thousands of gas injection holes, and a thin film is formed on a wafer by linearly spraying a gas flow at a gas supply end. However, the uniformity is poor, and there is a problem that the edge portion is thinner than the central region.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a chemical vapor deposition device.
The purpose of the invention is realized by the following technical scheme:
a chemical vapor deposition apparatus includes a process chamber, a gas shower head, and a heater; the gas nozzle and the heater are arranged in the processing cavity, and the gas nozzle is externally connected with a gas inlet pipe; the wafer that treats sets up on the heater, the jet-propelled end of gas shower nozzle is equipped with the perforated plate, the perforated plate is sunken sphere column structure, just be equipped with a plurality of fumaroles on the perforated plate, each fumarole orientation is in the wafer setting.
According to a preferred embodiment, said gas injection holes are in the same radial direction of the spherical surface corresponding to the perforated plate.
According to a preferred embodiment, the gas injection holes are arranged in a ring-shaped configuration above the perforated plate.
According to a preferred embodiment, the top edge of the process chamber is further provided with a gas inlet for introducing a cleaning gas.
According to a preferred embodiment, the purging gas is argon, nitrogen and/or helium.
According to a preferred embodiment, the bottom end of the process chamber is provided with an exhaust.
According to a preferred embodiment, the material of the gas shower is composed of aluminum, titanium, stainless steel or nickel.
According to a preferred embodiment, the material of the intake pipe is not limited to stainless steel.
According to a preferred embodiment, the gas injection end of the gas shower has a circular cross-section.
According to a preferred embodiment, the treatment chamber is of cuboidal or cylindrical configuration.
The aforementioned main aspects of the invention and their respective further alternatives may be freely combined to form a plurality of aspects, all of which are aspects that may be adopted and claimed by the present invention. The skilled person in the art can understand that there are many combinations, which are all the technical solutions to be protected by the present invention, according to the prior art and the common general knowledge after understanding the scheme of the present invention, and the technical solutions are not exhaustive herein.
The invention has the beneficial effects that:
this chemical vapor deposition device is through with the perforated plate sets up to sunken spherical column structure to promote the surface area of spouting the end, increased can set up quantity of fumarole. And the direction arrangement of the gas injection holes 25 and the number of the gas injection holes increase the flow of the process gas at the edge of the wafer 28 (the supply amount of the process gas flow can be increased by 1.25 times of the original flat plate structure), thereby improving the uniformity of the deposited film on the wafer. The problem that the deposited film on the wafer is thick at the center and thin at the edge is avoided.
Simultaneously, through with the perforated plate sets up to sunken spherical column structure for process gas blowout process has the effect of focus, has promoted process gas's utilization ratio.
In addition, the chemical vapor deposition device shortens the period of the process and improves the operation efficiency along with the uniform formation of the film on the front surface of the wafer.
Drawings
FIG. 1 is a schematic view of a conventional deposition apparatus;
FIG. 2 is a schematic view of the structure of the chemical vapor deposition apparatus of the present invention;
wherein, 11-a shower head body, 12-a perforated plate, 13-a gas inlet pipe, 14-an exhaust hole, 15-a heater, 16-a semiconductor chip, 21-a processing chamber, 22-a gas inlet, 23-a gas shower head, 24-a perforated plate, 25-a gas injection hole, 26-a gas inlet pipe, 27-a heater and 28-a wafer.
Detailed Description
It should be noted that, in order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations and positional relationships that are conventionally used in the products of the present invention, and are used merely for convenience in describing the present invention and for simplicity in description, but do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
referring to fig. 1, the present invention discloses a chemical vapor deposition apparatus including a process chamber 21, a gas shower 23, and a heater 27. The processing chamber 21 is a working chamber for chemical vapor deposition. The gas shower 23 is used for outputting process gas onto a wafer 28 to be processed. The heater 27 is used to effect heating of the wafer 28 and the environment within the chamber.
Preferably, the gas nozzle 23 and the heater 27 are disposed in the processing chamber 21, and the gas nozzle 23 is externally connected with a gas inlet pipe 26.
Preferably, the material of the nozzle is made of aluminum, titanium, stainless steel or nickel. The material of the intake pipe 26 is not limited to stainless steel.
Preferably, the cross section of the air injection end of the spray head is of a circular structure. Preferably, the treatment chamber 21 is a cubic or cylindrical structure.
The wafer 28 to be processed is arranged above the heater 27, and the gas spraying end of the gas spray head 23 is provided with a perforated plate 24. The perforated plate 24 is a sunken spherical structure, and a plurality of air injection holes 25 are arranged on the perforated plate 24, and each air injection hole 25 is arranged towards the wafer 28.
Further, the gas injection holes 25 are in the same radial direction as the corresponding spherical surfaces of the perforated plate 24.
Preferably, each air injection hole 25 may be arranged in a circular ring structure above the perforated plate 24.
Preferably, the top edge of the processing chamber 21 is further provided with a gas inlet 22 for introducing cleaning gas. Further, the introduced cleaning gas is argon, nitrogen and/or helium. Thereby cleaning the chamber of the processing chamber 21 by the ejected cleaning gas.
Preferably, the bottom end of the processing chamber 21 is provided with an exhaust port. The discharge of the cleaning gas is realized.
This chemical vapor deposition device is through with perforated plate 24 sets up to sunken spherical structure to promote the surface area of spouting the end, increased can set up quantity of fumarole 25. And the flow of the process gas at the edge of the wafer 28 is increased (the supply amount of the process gas can be increased by 1.25 times of the original flat plate structure) by the directional arrangement of the gas injection holes 25 and the number of the gas injection holes 25, so as to improve the uniformity of the deposited film on the wafer 28. The problem of thick center and thin edge of the deposited film on the wafer 28 is avoided.
Further, the perforated plate 24 is set to be a concave spherical structure, so that the spraying process of the process gas has a focusing effect, and the utilization rate of the process gas is improved.
In addition, the chemical vapor deposition device shortens the period of the process and improves the operation efficiency along with the uniform formation of the film on the front surface of the wafer 28.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. A chemical vapor deposition apparatus, characterized by comprising a process chamber (21), a gas shower head (23), and a heater (27);
the gas spray head (23) and the heater (27) are arranged in the processing cavity (21), and the gas spray head (23) is externally connected with a gas inlet pipe (26);
wafer (28) of awaiting processing sets up on heater (27), the gas spray end of gas shower nozzle (23) is equipped with perforated plate (24), perforated plate (24) are sunken spherical column structure, just be equipped with a plurality of fumaroles (25) on perforated plate (24), each fumarole (25) towards setting up in wafer (28).
2. The chemical vapor deposition apparatus according to claim 1, wherein the gas injection holes (25) are in the same radial direction as the spherical surface corresponding to the perforated plate (24).
3. The chemical vapor deposition apparatus according to claim 1, wherein the gas injection holes (25) are arranged in a ring-shaped configuration above the perforated plate (24).
4. A chemical vapour deposition apparatus according to claim 1, wherein a gas inlet (22) for introducing a cleaning gas is further provided at the top edge of the process chamber (21).
5. A chemical vapour deposition apparatus according to claim 4, wherein the purge gas introduced is argon, nitrogen and/or helium.
6. Chemical vapor deposition apparatus according to claim 4, characterized in that the bottom end of the process chamber (21) is provided with an exhaust.
7. The chemical vapor deposition apparatus according to claim 1, wherein the material of the gas shower head (23) is composed of aluminum, titanium, stainless steel, or nickel.
8. The chemical vapor deposition apparatus according to claim 1, wherein the gas spraying end of the gas spraying head (23) has a circular configuration in cross section.
9. The chemical vapor deposition apparatus according to claim 1, wherein the process chamber (21) has a cubic or cylindrical structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210418309.7A CN114737172A (en) | 2022-04-21 | 2022-04-21 | Chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210418309.7A CN114737172A (en) | 2022-04-21 | 2022-04-21 | Chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114737172A true CN114737172A (en) | 2022-07-12 |
Family
ID=82283450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210418309.7A Pending CN114737172A (en) | 2022-04-21 | 2022-04-21 | Chemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114737172A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5439524A (en) * | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
| US20020000196A1 (en) * | 2000-06-24 | 2002-01-03 | Park Young-Hoon | Reactor for depositing thin film on wafer |
| US20020112666A1 (en) * | 2001-02-20 | 2002-08-22 | Macronix International Co. Ltd. | High density plasma chemical vapor deposition chamber |
| US20030089314A1 (en) * | 1999-03-18 | 2003-05-15 | Nobuo Matsuki | Plasma CVD film-forming device |
| KR100765390B1 (en) * | 2006-05-01 | 2007-10-10 | 세메스 주식회사 | Apparatus for thin film vapor deposition using circularly domed showerhead |
| CN101624722A (en) * | 2008-07-08 | 2010-01-13 | 周星工程股份有限公司 | Gas distributing plate and apparatus for treating substrate including the same |
| CN101688297A (en) * | 2007-06-07 | 2010-03-31 | 应用材料股份有限公司 | Be used to deposit the equipment and the manufacture method thereof of uniform silicon film |
-
2022
- 2022-04-21 CN CN202210418309.7A patent/CN114737172A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5439524A (en) * | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
| US20030089314A1 (en) * | 1999-03-18 | 2003-05-15 | Nobuo Matsuki | Plasma CVD film-forming device |
| US20020000196A1 (en) * | 2000-06-24 | 2002-01-03 | Park Young-Hoon | Reactor for depositing thin film on wafer |
| US20020112666A1 (en) * | 2001-02-20 | 2002-08-22 | Macronix International Co. Ltd. | High density plasma chemical vapor deposition chamber |
| KR100765390B1 (en) * | 2006-05-01 | 2007-10-10 | 세메스 주식회사 | Apparatus for thin film vapor deposition using circularly domed showerhead |
| CN101688297A (en) * | 2007-06-07 | 2010-03-31 | 应用材料股份有限公司 | Be used to deposit the equipment and the manufacture method thereof of uniform silicon film |
| CN101624722A (en) * | 2008-07-08 | 2010-01-13 | 周星工程股份有限公司 | Gas distributing plate and apparatus for treating substrate including the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100728401B1 (en) | Shower head and film-forming device using the same | |
| KR100614648B1 (en) | Apparatus for treating substrates used in manufacturing semiconductor devices | |
| KR100934296B1 (en) | Vaporizers, Gas Generators, and Semiconductor Processing Systems | |
| KR950012910B1 (en) | Vapor phase growth apparatus | |
| US4609575A (en) | Method of apparatus for applying chemicals to substrates in an acid processing system | |
| TWI391994B (en) | Vaporizer and semiconductor processing system | |
| JPS60189928A (en) | Vapor growth device under reduced pressure | |
| JPH08337876A (en) | Reaction gas ejecting head and thin film vapor phase growth device | |
| US20050241580A1 (en) | Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas | |
| JP2002053965A (en) | Reaction vessel for vapor depositing thin film | |
| JP2002030445A (en) | Shower head used for cecvd system | |
| JP2004035971A (en) | Thin film manufacturing apparatus | |
| US20050045100A1 (en) | Reactors, systems with reaction chambers, and methods for depositing materials onto micro-device workpieces | |
| JPH02187018A (en) | Chemical vapor phase deposition device | |
| KR20040085315A (en) | Reactor for depositing thin film on wafer | |
| KR20030092093A (en) | Gaseous phase growing device | |
| CN201339061Y (en) | Chemical vapor deposition reactor | |
| CN114737172A (en) | Chemical vapor deposition device | |
| KR20060107683A (en) | Chemical vapor deposition apparatus | |
| CN101403108A (en) | Chemical vapor deposition reactor and chemical vapor deposition method | |
| KR100484945B1 (en) | Semiconductor device fabrication apparatus having multi-hole angled gas injection system | |
| KR100980397B1 (en) | Mocvd reactor for controlling the distributions of metal-organic source gas | |
| JP2003303819A (en) | Substrate treatment apparatus and method of manufacturing semiconductor device | |
| CN110249073A (en) | Diffuser design for flowable CVD | |
| CN111058012B (en) | Air inlet device and semiconductor processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |