JPS60189928A - Vapor growth device under reduced pressure - Google Patents

Abstract

PURPOSE:To enable the formation of a good-quality coating film on a substrate to be treated, by providing a spray head having a plurality of gas spray openings, through which various kinds of reaction gasses are sprayed out of different spray openings so that the various kinds of reaction gasses may be mixed in a pressure reduction reactor. CONSTITUTION:In the case of forming coating films of tungsten silicide, a semiconductor substrate 17 is mounted on a substrate mount 18. After exhaust in the reactor 11 into vacuum through exhaust tubes 20, the reaction gas vaporized from a source container filled with tungsten hexafluoride is introduced through the first gas introduction tube 12, and monosilane gas is introduced through the second gas introduction tube 13. Then, they are individually sprayed through spray openings 14 and 15 provided at the center and in the periphery of the spray head 14, respectively; then, being mixed uniformly in said reactor 11. The mixture is heated by a heater 19, and the film grows in vapor phase by the reaction of the reaction gas.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a reduced pressure vapor phase growth apparatus, and more particularly to the structure of an injection head for injecting a reaction gas into a reduced pressure reaction vessel.

(1)) Conventional technology and problems A conventional reduced pressure vapor phase growth apparatus is shown in FIG.

In the figure, 1 is a reaction vessel, 2 is a reaction gas introduction pipe, and 3
Reference numeral 4 indicates a gas injection port provided in the gas introduction pipe, 4 indicates a substrate to be processed, 5 indicates a substrate mounting table, 6 indicates a heater provided on the substrate mounting table, and 7 indicates an exhaust pipe. For example, a cylinder 8 Tungsten hexafluoride (WFa) Tomonosilane (5
gas with if(4) pulp 9. The reaction gas is supplied to the four-man tube 2 through the mass flow controller IO.

Thus, as is clear from the figure, in the conventional reduced pressure vapor phase growth apparatus, a plurality of desired reaction gases are supplied to the same inlet pipe 2.
was injected into the reaction vessel 1 through the injection port 8 to a predetermined degree of vacuum, and a desired broken film was grown in vapor phase on the substrate 4E to be processed, which was heated to a desired temperature by the heater 6vc. .

However, depending on the type of vapor phase growth imaging, multiple TA reactant gases that are likely to react in the vapor phase may be used. A phase reaction occurs, and a broken film is formed on the inlet pipe or injection port, and the formed broken film peels off and falls onto the treated groups #ti and E, causing bottle balls, etc., and confusing the film quality. Historically, there were problems such as the injection port becoming clogged and the reactant gas not being uniformly supplied.

(C)@Akira's Purpose The purpose of the present invention was made in view of the above-mentioned problems, and even in the case of low-pressure vapor phase growth using a plurality of reactant gases that easily undergo gas phase reactions, the purpose of the present invention is to An object of the present invention is to provide a reduced-pressure vapor phase growth apparatus capable of reducing vapor phase growth at an injection port as much as possible and performing vapor phase growth of good film quality by uniformly supplying a reaction gas.

(C1) Structure of the Invention In order to achieve the object, the present invention has a plurality of gas injection ports, and different types of reaction gases are injected from the different injection ports to perform multiple types of reactions in a reduced pressure reaction vessel. It is characterized by being provided with an injection head that mixes gas.

(e) Embodiments of the Invention Hereinafter, some examples of the present invention will be described with reference to the drawings. FIG. 2 is a schematic diagram of a reduced pressure April growth apparatus according to the first embodiment of the present invention.

In the figure, 11 is a reaction container, 12 is a first reaction gas introduction pipe, 13 is a second reaction gas introduction pipe, 14 is an injection head, 15 is a plurality of injection ports provided in the center of the injection head, 16 is a plurality of jetting ports provided around the jetting head; 17 is a substrate to be processed; 18 is a substrate mounting table;
9 is a heater provided on the substrate mounting table, 20 is an exhaust pipe, and the same members as in FIG. 1 are given the same symbols.

Using a reduced pressure vapor phase growth apparatus configured as described above, multiple types of reaction gases that easily react in the vapor phase, such as tungsten hexafluoride (WF6) and monosilane gas (5 liters (4
) to form a ruptured film of tungsten silicide (WS:12) on a substrate to be processed, for example, a semiconductor substrate 17J:, place the substrate 17 halfway on the substrate mounting table 18k, and place the substrate 17 in the Gll in the reaction chamber. Fireflies were evacuated through the exhaust pipe 20, and 7 fcgl of tungsten hexafluoride reaction gas was vaporized from a tungsten hexafluoride source container (not shown).
Monosilane gas is introduced from the second gas introduction pipe 12 and the second gas introduction pipe 13, respectively, and is separately introduced into the reaction vessel 11 through the injection ports 14 and 15 provided at the center and periphery of the injection head 14, respectively. Injected into the reaction-4 vessel 11
is mixed evenly within the True in this case! ! ! The degree is about 0.
The semiconductor on the substrate mounting table 11jh is adjusted to 5'rorr.
The wafer 17 is heated to a predetermined temperature of approximately 40°C by the heater 19.
The semiconductor wafer 17 is heated to 0° C., and the reaction gases of the tungsten hexafluoride and monosilane react to form a vapor phase growth, thereby forming a tungsten silicide M film on the semiconductor wafer 17 .

In such a case, as mentioned above, the A type of reactive gas that is likely to react is different. Since it is sprayed like a shower from several injection ports and mixed uniformly in the reduced pressure reaction vessel, there is little vapor phase growth on the inlet pipe and injection ports, and a high-quality broken film is formed on the substrate to be processed. It is possible to form.

next! As an example of g2, a cross-sectional view of a main part is shown in FIG. 3, and the same reference numerals are given to the same parts as in the plan view.

As is clear from the figure, in the injection head 31 into which different types of reaction gases are introduced from the first gas introduction pipe 12 and the second gas introduction pipe 13, different types of reaction gases are alternately showered from a large number of injection ports. The injection port 82 is configured to emit a jet of water in a shape.
83 is provided. Even in this case, the above-mentioned effects can be underestimated.

Further, as a third embodiment, a sectional view of a main part is shown in FIG. 4, and the same reference numerals are given to the same parts as in the plan view.

In the figure, an injection head 4 into which different types of reaction gases are introduced through a first gas introduction pipe 12 and a second gas introduction pipe 18.
1, the reaction gas is injected parallel to the plane having the injection port, and different kinds of reaction gases are injected in the form of a shower through the injection port 42 provided in the center and the injection port 43 provided in the peripheral portion. It is configured as follows.

Of course, the above-mentioned effects can also be obtained in such a configuration.

(v) As described in detail, the present invention has a plurality of gas injection ports, and different types of reaction gases are injected from the different injection ports to form a tilted cylinder in a reduced pressure reaction vessel. By providing a jetting head that mixes the anti-J gas, it is possible to form a high-quality deposited film on the substrate to be processed, which is effective in improving the quality.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of a conventional device, FIG. 2 is a diagram of a first embodiment of the present invention, and FIGS. 3 and 4 are diagrams of the second and third embodiments of the present invention. It is a main part Wr side view of the actual 7N example. In the figure, 11 is the reaction volume Pg, 12 fl is the first reaction gas introduction pipe, 13 is the second reaction gas introduction pipe, 14.81.4
1 is the jet head, 15, 16, 82, 33, 42, 43
is an injection port, 17 is a temporarily processed substrate, 18 is a substrate mounting table, 19
20 indicates a heater, and 20 indicates an exhaust pipe. 3rd [2I

Claims (4)

[Claims] (1) An injection head has a plurality of gas injection ports, and different types of reaction gases are injected from the different injection ports, so that a plurality of m types of reaction gases are mixed in a reduced pressure reaction vessel. A reduced pressure vapor phase growth apparatus characterized by being provided. (2) J = Claim 1, characterized in that in the injection head, different types of reactive gases are injected from the injection ports provided in the center and the injection ports provided in the peripheral portion. The reduced pressure vapor phase growth apparatus described in . (3) The reduced pressure vapor phase growth apparatus according to claim 1, wherein different types of reaction gases are alternately injected from a large number of injection ports in the injection head. (4) In the jetting head described in (g), the reactive gas is jetted parallel to the plane having the jetting port, and different kinds of reactive gases are jetted between the jetting port provided in the center and the jetting port provided in the periphery. The reduced pressure vapor phase growth apparatus according to claim 1, characterized in that the apparatus is adapted to perform the following steps.