JP2006514161A5 - - Google Patents
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- JP2006514161A5 JP2006514161A5 JP2004568825A JP2004568825A JP2006514161A5 JP 2006514161 A5 JP2006514161 A5 JP 2006514161A5 JP 2004568825 A JP2004568825 A JP 2004568825A JP 2004568825 A JP2004568825 A JP 2004568825A JP 2006514161 A5 JP2006514161 A5 JP 2006514161A5
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- plasma
- orifices
- flow rate
- reactant gases
- plasmas
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- 210000002381 Plasma Anatomy 0.000 claims 56
- 239000007789 gas Substances 0.000 claims 48
- 239000000376 reactant Substances 0.000 claims 44
- 239000000758 substrate Substances 0.000 claims 12
- 239000011248 coating agent Substances 0.000 claims 7
- 238000000576 coating method Methods 0.000 claims 7
- 239000012530 fluid Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
Claims (10)
a)複数のプラズマを発生するための複数のプラズマ源212からなる1以上のアレイ210であって、前記複数のプラズマ源212の各々が陰極214、陽極216、及びプラズマ室202内に配設された非反応性プラズマ源ガス用入口218を含む、1以上のアレイ210、
b)前記基体230を収容するための堆積室204であって、当該堆積室204は前記プラズマ室202と流体流通状態にあり、前記プラズマ室202は第一の所定圧力に維持され、当該堆積室204は第二の所定圧力に維持され、前記第二の所定圧力は前記第一の所定圧力より低い、堆積室204、並びに
c)1種以上の反応体ガスを一定流量で前記複数のプラズマの各々に供給するため、前記堆積室204内に配設された1以上の共通反応体ガスインジェクター220
を含んでなる装置200。 An apparatus 200 for depositing a uniform coating 232 on a flat surface 234 of a substrate 230 comprising:
a) One or more arrays 210 including a plurality of plasma sources 212 for generating a plurality of plasmas, each of the plurality of plasma sources 212 being disposed in a cathode 214, an anode 216, and a plasma chamber 202. One or more arrays 210 including a non-reactive plasma source gas inlet 218;
b) a deposition chamber 204 for accommodating the substrate 230, wherein the deposition chamber 204 is in fluid communication with the plasma chamber 202, and the plasma chamber 202 is maintained at a first predetermined pressure; 204 is maintained at a second predetermined pressure, the second predetermined pressure being lower than the first predetermined pressure; and c) one or more reactant gases at a constant flow rate of the plurality of plasmas. One or more common reactant gas injectors 220 disposed within the deposition chamber 204 for supply to each.
A device 200 comprising:
a)前記1種以上の反応体ガスを反応体ガス源から供給するために役立つ内部空間を有する管壁構造物からなる反応体ガス入口、
b)第一のプラズマに近接した第一の複数のオリフィス240であって、当該第一の複数のオリフィス240の各々は前記管壁構造物を通って前記内部空間から前記反応体ガス入口の外面まで延在しており、当該第一の複数のオリフィス240は前記1種以上の反応体ガスが前記内部空間から当該第一の複数のオリフィス240を通過して前記第一のプラズマ中に第一の流量で注入されるように向けられている、第一の複数のオリフィス240、及び
c)第二のプラズマに近接した第二の複数のオリフィス242であって、当該第二の複数のオリフィス242の各々は前記管壁構造物を通って前記内部空間から前記反応体ガス入口の外面まで延在しており、当該第二の複数のオリフィス242は前記1種以上の反応体ガスが前記内部空間から当該第二の複数のオリフィス242を通過して前記第二のプラズマ中に第二の流量で注入されるように向けられており、前記第二の流量は前記第一の流量と実質的に等しい、第二の複数のオリフィス242
を含んでなる共通反応体ガスインジェクター220。 A common reactant gas injector 220 for injecting a uniform flow of one or more reactant gases into a plurality of plasmas generated by an array 210 of a plurality of plasma sources 212;
a) a reactant gas inlet comprising a tube wall structure having an internal space useful for supplying said one or more reactant gases from a reactant gas source;
b) a first plurality of orifices 240 proximate to the first plasma, each of the first plurality of orifices 240 passing through the tube wall structure from the interior space to the outer surface of the reactant gas inlet. The first plurality of orifices 240 pass through the first plurality of orifices 240 from the internal space and pass through the first plurality of orifices 240 into the first plasma. A first plurality of orifices 240 that are directed to be injected at a flow rate of c, and c) a second plurality of orifices 242 proximate to the second plasma, the second plurality of orifices 242 Each extending through the tube wall structure from the internal space to the outer surface of the reactant gas inlet, and the second plurality of orifices 242 contain the one or more reactant gases in the internal space. From Directed to pass through the second plurality of orifices 242 and into the second plasma at a second flow rate, the second flow rate being substantially equal to the first flow rate. , Second plurality of orifices 242
A common reactant gas injector 220 comprising:
a)複数のプラズマを発生するための複数のプラズマ源212からなる1以上のアレイ210であって、前記複数のプラズマ源212の1以上が膨張熱プラズマ源であり、前記複数のプラズマ源212の各々が陰極214、陽極216、及びプラズマ室202内に配設された非反応性プラズマ源ガス用入口218を含む、1以上のアレイ210、
b)前記基体230を収容するための堆積室204であって、当該堆積室204は前記プラズマ室202と流体流通状態にあり、前記プラズマ室202は第一の所定圧力に維持され、当該堆積室204は第二の所定圧力に維持され、前記第二の所定圧力は前記第一の所定圧力より低い、堆積室204、並びに
c)1種以上の反応体ガスの一様な流れを前記複数のプラズマの各々に注入するため、前記堆積室204内に配設された1以上の共通反応体ガスインジェクター220であって、(i)前記反応体ガスを1以上の反応体ガス源から供給するために役立つ内部空間を有する管壁構造物からなる反応体ガス入口と、(ii)第一のプラズマに近接した第一の複数のオリフィス240であって、当該第一の複数のオリフィス240の各々は前記管壁構造物を通って前記内部空間から前記反応体ガス入口の外面まで延在しており、当該第一の複数のオリフィス240は前記反応体ガスが前記内部空間から当該第一の複数のオリフィス240を通過して前記第一のプラズマ中に第一の流量で注入されるように向けられている、第一の複数のオリフィス240と、(iii)第二のプラズマに近接した第二の複数のオリフィス242であって、当該第二の複数のオリフィス242の各々は前記管壁構造物を通って前記内部空間から前記反応体ガス入口の外面まで延在しており、当該第二の複数のオリフィス242は前記反応体ガスが前記内部空間から当該第二の複数のオリフィス242を通過して前記第二のプラズマ中に第二の流量で注入されるように向けられており、前記第二の流量は前記第一の流量と実質的に等しい、第二の複数のオリフィス242とを含んでなる共通反応体ガスインジェクター220
を含んでなる装置200。 An apparatus 200 for depositing a uniform coating 232 on a surface 234 of a substrate 230, comprising:
a) one or more arrays 210 comprising a plurality of plasma sources 212 for generating a plurality of plasmas, wherein one or more of the plurality of plasma sources 212 is an expanded thermal plasma source; One or more arrays 210, each including a cathode 214, an anode 216, and a non-reactive plasma source gas inlet 218 disposed within the plasma chamber 202;
b) a deposition chamber 204 for accommodating the substrate 230, wherein the deposition chamber 204 is in fluid communication with the plasma chamber 202, and the plasma chamber 202 is maintained at a first predetermined pressure; 204 is maintained at a second predetermined pressure, the second predetermined pressure being lower than the first predetermined pressure, and c) a uniform flow of one or more reactant gases in the plurality of reactant gases. One or more common reactant gas injectors 220 disposed within the deposition chamber 204 for injecting into each of the plasmas, (i) for supplying the reactant gas from one or more reactant gas sources. And (ii) a first plurality of orifices 240 proximate to the first plasma, each of the first plurality of orifices 240 comprising: Above The first plurality of orifices 240 extend from the internal space through the wall structure to the outer surface of the reactant gas inlet, and the first plurality of orifices 240 pass from the internal space to the first plurality of orifices 240. A first plurality of orifices 240 directed to be injected at a first flow rate into the first plasma and (iii) a second plurality of proximate to the second plasma An orifice 242, each of the second plurality of orifices 242 extending through the tube wall structure from the internal space to an outer surface of the reactant gas inlet, the second plurality of orifices 242 is directed so that the reactant gas passes from the internal space through the second plurality of orifices 242 and is injected into the second plasma at a second flow rate. Said Flow rate substantially equal to a common reactant gas injector 220 comprising a second plurality of orifices 242
A device 200 comprising:
a)平坦な表面234を有する基体230を堆積室204に供給する段階、
b)堆積室204を所定の堆積圧力に排気する段階、
c)複数のプラズマ源212からなる1以上のアレイ210から複数のプラズマを発生させる段階、
d)第一のプラズマ中への1種以上の反応体ガスの第一の流量が第二のプラズマ中への1種以上の反応体ガスの第二の流量と実質的に等しくなるようにして、1以上の共通反応体ガスインジェクター220を通して1種以上の反応体ガスを複数のプラズマの各々に注入する段階、
e)1種以上の反応体ガス及び複数のプラズマを基体230に向けて堆積室204内に流す段階、並びに
f)1種以上の反応体ガスを複数のプラズマと反応させて基体230の平坦な表面234上に皮膜232を形成する段階
を含んでなる方法。 A method for depositing a uniform coating 232 on a flat surface 234 of a substrate 230 comprising:
a) supplying a substrate 230 having a flat surface 234 to the deposition chamber 204;
b) evacuating the deposition chamber 204 to a predetermined deposition pressure;
c) generating a plurality of plasmas from one or more arrays 210 comprising a plurality of plasma sources 212;
d) such that the first flow rate of the one or more reactant gases into the first plasma is substantially equal to the second flow rate of the one or more reactant gases into the second plasma. Injecting one or more reactant gases into each of a plurality of plasmas through one or more common reactant gas injectors 220;
e) flowing one or more reactant gases and a plurality of plasmas into the deposition chamber 204 toward the substrate 230; and f) reacting one or more reactant gases with the plurality of plasmas to flatten the substrate 230. Forming the coating 232 on the surface 234;
a)1種以上の反応体ガスを反応体ガス源から共通反応体ガスインジェクター220に供給する段階、
b)1種以上の反応体ガスを、第一のプラズマに近接した共通反応体ガスインジェクター220中の第一の複数のオリフィス240に通過させる段階であって、第一の複数のオリフィス240は1種以上の反応体ガスが第一のプラズマ中に第一の所定流量で注入されるように向けられている段階、並びに
c)1種以上の反応体ガスを、第二のプラズマに近接した共通反応体ガスインジェクター220中の第二の複数のオリフィス242に通過させる段階であって、第二の複数のオリフィス242は1種以上の反応体ガスが第二のプラズマ中に第二の所定流量で注入されるように向けられており、第二の所定流量は第一の所定流量と実質的に等しい段階
を含んでなる方法。 The first flow rate of the one or more reactant gases into the first plasma is substantially equal to the second flow rate of the one or more reactant gases into the second plasma. A method for injecting one or more reactant gases into a plurality of plasmas generated by an array 210 of a plasma source 212 of
a) supplying one or more reactant gases from a reactant gas source to a common reactant gas injector 220;
b) passing one or more reactant gases through a first plurality of orifices 240 in a common reactant gas injector 220 proximate to the first plasma, wherein the first plurality of orifices 240 is 1 A stage in which the one or more reactant gases are directed to be injected into the first plasma at a first predetermined flow rate; and c) one or more reactant gases in common adjacent to the second plasma. Passing through a second plurality of orifices 242 in the reactant gas injector 220, wherein the second plurality of orifices 242 has one or more reactant gases in the second plasma at a second predetermined flow rate. A method which is directed to be injected and wherein the second predetermined flow rate comprises a step substantially equal to the first predetermined flow rate.
a)表面234を有する基体230を堆積室204に供給する段階であって、堆積室204は複数のプラズマ源212からなる1以上のアレイ210と流体流通状態にあり、複数のプラズマ源212の1以上は陰極214、陽極216、及びプラズマ室202内に配設された非反応性プラズマ源ガス用入口218を有する膨張熱プラズマ源であり、プラズマ室202は堆積室204と流体流通状態にある段階、
b)堆積室204を所定の堆積圧力に排気し、プラズマ室202を第一の所定圧力に排気する段階であって、所定の堆積圧力は第一の所定圧力より低い段階、
c)複数のプラズマ源212中に複数のプラズマを発生させ、複数のプラズマを前記堆積室204内に流す段階、
d)複数のプラズマが堆積室204内に流入する際、第一のプラズマ中への1種以上の反応体ガスの第一の流量が第二のプラズマ中への1種以上の反応体ガスの第二の流量と実質的に等しくなるようにして、1以上の共通反応体ガスインジェクターを通して1種以上の反応体ガスを複数のプラズマの各々に注入する段階、
e)1種以上の反応体ガス及び複数のプラズマを基体230に向けて堆積室204内に流す段階、並びに
f)1種以上の反応体ガスを複数のプラズマの各々と反応させて基体230の表面234上に皮膜232を形成する段階
によって堆積したものである、基体230。
A substrate 230 having a uniform coating 232 deposited on a flat surface 234, the uniform coating 232 being
a) supplying a substrate 230 having a surface 234 to the deposition chamber 204, wherein the deposition chamber 204 is in fluid communication with one or more arrays 210 of a plurality of plasma sources 212, one of the plurality of plasma sources 212. The above is an expanded thermal plasma source having a cathode 214, an anode 216, and a non-reactive plasma source gas inlet 218 disposed in the plasma chamber 202, and the plasma chamber 202 is in fluid communication with the deposition chamber 204. ,
b) exhausting the deposition chamber 204 to a predetermined deposition pressure and evacuating the plasma chamber 202 to a first predetermined pressure, wherein the predetermined deposition pressure is lower than the first predetermined pressure;
c) generating a plurality of plasmas in a plurality of plasma sources 212 and flowing a plurality of plasmas into the deposition chamber 204;
d) When a plurality of plasmas flow into the deposition chamber 204, the first flow rate of the one or more reactant gases into the first plasma is such that the one or more reactant gases into the second plasma Injecting one or more reactant gases into each of the plurality of plasmas through one or more common reactant gas injectors to be substantially equal to the second flow rate;
e) flowing one or more reactant gases and a plurality of plasmas into the deposition chamber 204 toward the substrate 230; and f) reacting one or more reactant gases with each of the plurality of plasmas. A substrate 230 that has been deposited by forming a coating 232 on the surface 234.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2003/005209 WO2004076716A1 (en) | 2003-02-20 | 2003-02-20 | Apparatus and method for depositing large area coatings on planar surfaces |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006514161A JP2006514161A (en) | 2006-04-27 |
JP2006514161A5 true JP2006514161A5 (en) | 2006-06-15 |
Family
ID=32925324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004568825A Pending JP2006514161A (en) | 2003-02-20 | 2003-02-20 | Apparatus and method for depositing large area coatings on flat surfaces |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1597409A1 (en) |
JP (1) | JP2006514161A (en) |
KR (1) | KR100977955B1 (en) |
CN (1) | CN1764738B (en) |
AU (1) | AU2003211169A1 (en) |
WO (1) | WO2004076716A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6743524B2 (en) * | 2002-05-23 | 2004-06-01 | General Electric Company | Barrier layer for an article and method of making said barrier layer by expanding thermal plasma |
US7521653B2 (en) * | 2004-08-03 | 2009-04-21 | Exatec Llc | Plasma arc coating system |
CN101601333A (en) | 2006-12-28 | 2009-12-09 | 埃克阿泰克有限责任公司 | The method and apparatus that is used for plasma arc coating |
JP5916287B2 (en) | 2007-05-17 | 2016-05-11 | エグザテック・リミテッド・ライアビリティー・カンパニーExatec,LLC. | Method for coating a substrate |
CN102618846B (en) * | 2012-04-18 | 2014-04-09 | 南京航空航天大学 | Method and device for depositing super-hard film through multi-torch plasma spray CVD (Chemical Vapor Deposition) method |
EP2784175A1 (en) * | 2013-03-28 | 2014-10-01 | NeoCoat SA | Device for depositing diamond in vapour phase |
CN103924210A (en) * | 2014-04-24 | 2014-07-16 | 无锡元坤新材料科技有限公司 | Plasma deposition device and method for preparing diamond coating |
MX2017006093A (en) * | 2014-11-10 | 2017-07-19 | Superior Ind Int Inc | Method of coating alloy wheels. |
CN107881485B (en) * | 2017-11-01 | 2019-10-01 | 深圳市华星光电半导体显示技术有限公司 | The packaging method of plasma enhanced chemical vapor deposition equipment and oled panel |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0772341B2 (en) * | 1991-02-21 | 1995-08-02 | 中外炉工業株式会社 | Plasma generator with pressure gradient type plasma gun |
US6365016B1 (en) * | 1999-03-17 | 2002-04-02 | General Electric Company | Method and apparatus for arc plasma deposition with evaporation of reagents |
US6397776B1 (en) * | 2001-06-11 | 2002-06-04 | General Electric Company | Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators |
US6681716B2 (en) * | 2001-11-27 | 2004-01-27 | General Electric Company | Apparatus and method for depositing large area coatings on non-planar surfaces |
US6948448B2 (en) * | 2001-11-27 | 2005-09-27 | General Electric Company | Apparatus and method for depositing large area coatings on planar surfaces |
JP2003268556A (en) * | 2002-03-08 | 2003-09-25 | Sumitomo Heavy Ind Ltd | Plasma processing apparatus |
-
2003
- 2003-02-20 AU AU2003211169A patent/AU2003211169A1/en not_active Abandoned
- 2003-02-20 KR KR1020057015386A patent/KR100977955B1/en active IP Right Grant
- 2003-02-20 WO PCT/US2003/005209 patent/WO2004076716A1/en active Application Filing
- 2003-02-20 CN CN03826341.6A patent/CN1764738B/en not_active Expired - Fee Related
- 2003-02-20 EP EP03816093A patent/EP1597409A1/en not_active Withdrawn
- 2003-02-20 JP JP2004568825A patent/JP2006514161A/en active Pending
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