CN217895795U - Automatic cleaning device for reaction chamber of epitaxial furnace - Google Patents
Automatic cleaning device for reaction chamber of epitaxial furnace Download PDFInfo
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- CN217895795U CN217895795U CN202221934807.9U CN202221934807U CN217895795U CN 217895795 U CN217895795 U CN 217895795U CN 202221934807 U CN202221934807 U CN 202221934807U CN 217895795 U CN217895795 U CN 217895795U
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Abstract
The utility model relates to the technical field of epitaxial furnaces, in particular to an automatic cleaning device for reaction chambers of epitaxial furnaces, which comprises a reaction chamber component, wherein the reaction chamber component is internally provided with a reaction chamber which is horizontally extended, the reaction chamber is communicated with one end of a gas guide component, the other end of the gas guide component is connected with a gas supply component and a remote plasma generating device through a switching valve or a solenoid valve, and the remote plasma generating device is connected with a cleaning gas supply device; the device connects remote plasma generating device on the gas guide subassembly through diverter valve or solenoid valve for after epitaxial reaction, can get through the relation of being connected of remote plasma generating device and reaction chamber fast through diverter valve or solenoid valve to send into plasma through remote plasma generating device and in order to carry out cleaning treatment to gas guide subassembly and reaction chamber, have the cleaning efficiency height, the cleaning performance is good, the high characteristics of cleaning gas utilization ratio.
Description
Technical Field
The application relates to the technical field of epitaxial furnaces, in particular to an automatic cleaning device for a reaction chamber of an epitaxial furnace.
Background
The existing third-generation epitaxial furnace generally utilizes reaction gas to react and deposit a film at high temperature, and is particularly suitable for silicon carbide film coating to obtain a silicon carbide epitaxial wafer.
In the epitaxial reaction process, along with the continuous reaction and deposition of reaction gas, the reaction gas can also carry out the deposition reaction on the inner wall of the reaction chamber of the epitaxial furnace and form the impurity attached to the inner wall of the reaction chamber, the impurity is piled up too much or causes to drop and makes epitaxial wafer form epitaxial defect and surface particle, seriously influence epitaxial quality and yield, so the epitaxial furnace needs to regularly wash the reaction chamber in order to get rid of the impurity on the inner wall of the reaction chamber, if not in time wash the reaction chamber can seriously influence the productivity and the maintenance cost of epitaxial equipment. The existing cleaning of the epitaxial furnace is generally carried out by manually carrying out physical scraping to carry out cleaning treatment, and cleaning treatment is carried out by introducing cleaning gas capable of reacting with impurities, the former has the defect of low cleaning efficiency because the epitaxial furnace needs to be disassembled, and the latter has poor reaction effect and is difficult to ensure the cleaning effect.
In view of the above problems, no effective technical solution exists at present.
SUMMERY OF THE UTILITY MODEL
An object of this application is to provide an automatic cleaning device of epitaxial furnace reaction chamber to compromise and improve cleaning efficiency and cleaning performance, with improve equipment's whole production efficiency.
The application provides an automatic cleaning device of epitaxial furnace reaction chamber for clear away the impurity of sedimentary on the reaction chamber, the device includes the reaction chamber subassembly, be equipped with the reaction chamber that the level extends the setting in the reaction chamber subassembly, reaction chamber and air guide subassembly one end intercommunication, the air guide subassembly other end passes through the diverter valve or the solenoid valve is connected with air feed subassembly and long-range plasma generating device, long-range plasma generating device is connected with the purge gas supply ware.
The utility model provides an automatic cleaning device of epitaxial furnace reaction chamber can get through the relation of being connected of long-range plasma generating device and reaction chamber through diverter valve or solenoid valve fast to send into plasma through long-range plasma generating device and carry out cleaning treatment with gas guide subassembly and reaction chamber.
The automatic cleaning device for the reaction chamber of the epitaxial furnace is characterized in that the gas guide assembly comprises a gas inlet plate, a gas homogenizing plate and a gas guide cylinder which are sequentially connected.
The automatic cleaning device for the reaction chamber of the epitaxial furnace is characterized in that a first air inlet nozzle is arranged in the middle of the air inlet plate and connected with the air supply assembly and the remote plasma generating device through a switching valve.
In the automatic cleaning device for the reaction chamber of the epitaxial furnace, the gas supply assembly and the remote plasma generating device both send gas through the first gas inlet nozzle, so that the flow fields of the gas flow formed by the gas supply assembly and the remote plasma generating device are nearly consistent, and the formed plasma gas flow can smoothly reach the position where impurities are deposited to remove the impurities.
The automatic cleaning device for the reaction chamber of the epitaxial furnace is characterized in that the air inlet plate is provided with at least two second air inlet nozzles, at least one second air inlet nozzle is connected with the remote plasma generating device through an electromagnetic valve, and the rest second air inlet nozzles are connected with the air supply assembly through electromagnetic valves.
According to the automatic cleaning device for the reaction chamber of the epitaxial furnace, the electromagnetic valve is arranged on each second air inlet nozzle and connected with the air supply assembly or the remote plasma generating device through the electromagnetic valve, so that the independent control of the air supply assembly and the remote plasma generating device is realized, the air supply assembly and the remote plasma generating device can be closed simultaneously under special conditions, and the use safety of the epitaxial furnace is improved.
Epitaxial furnace reaction chamber's self-cleaning device, wherein, the second suction nozzle is three, and sets up for horizontal equidistance, is located the centre the second suction nozzle with through the solenoid valve long-range plasma generating device connects, is located both sides the second suction nozzle pass through the solenoid valve with the air feed subassembly is connected.
Epitaxial furnace reaction chamber's self-cleaning device, wherein, the reaction chamber subassembly includes graphite reaction chamber and induction coil, the reaction chamber is located inside the graphite reaction chamber, induction coil encircles the setting and is in the graphite reaction chamber outside, be used for right the graphite reaction chamber carries out induction heating.
The automatic cleaning device for the reaction chamber of the epitaxial furnace is characterized in that the induction coil is of a hollow structure and is used for introducing cooling water.
The automatic cleaning device for the reaction chamber of the epitaxial furnace comprises a plasma generating tube, a medium-frequency power supply and an impedance matcher, wherein the impedance matcher is connected with the plasma generating tube and the medium-frequency power supply. .
The automatic cleaning device for the reaction chamber of the epitaxial furnace is characterized in that the remote plasma generating device is connected with the cleaning gas supplier through a mass flow controller.
The automatic cleaning device for the reaction chamber of the epitaxial furnace is characterized in that the reaction chamber, the gas guide assembly and the remote plasma generating device are all arranged in a horizontally extending mode.
By last can know, the application provides an automatic cleaning device of epitaxial furnace reaction chamber, the device passes through diverter valve or solenoid valve and connects long-range plasma generating device on the air guide subassembly, make epitaxial furnace after the epitaxial reaction, can get through the relation of being connected of long-range plasma generating device and reaction chamber through diverter valve or solenoid valve fast, and send into plasma in order to carry out cleaning process to air guide subassembly and reaction chamber through long-range plasma generating device, and has the cleaning efficiency height, the cleaning performance is good, the high characteristics of cleaning gas utilization ratio.
Drawings
Fig. 1 is a schematic side view of an apparatus for automatically cleaning a reaction chamber of an epitaxial furnace according to some embodiments of the present disclosure.
Fig. 2 is a schematic top view of an apparatus for automatically cleaning a reaction chamber of an epitaxial furnace according to another embodiment of the present disclosure, after removing components of the reaction chamber.
FIG. 3 is an exploded view of the gas directing assembly.
Reference numerals: 1. a reaction chamber assembly; 2. an air guide assembly; 3. a switching valve; 4. an electromagnetic valve; 5. a gas supply assembly; 6. a remote plasma generating device; 7. a cleaning gas supplier; 8. a mass flow controller; 11. a reaction chamber; 12. a graphite reaction chamber; 13. an induction coil; 21. an air intake plate; 22. a gas homogenizing plate; 23. an air guide cylinder; 24. a first intake nozzle; 25. a second inlet nozzle; 61. a quartz gas-guide tube; 62. a solenoid coil; 63. a radio frequency power supply; 64. a waveguide is provided.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or reference letters in the various examples, which have been repeated for purposes of simplicity and clarity and do not in themselves dictate a relationship between the various embodiments and/or arrangements discussed. In addition, the present disclosure provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
As shown in fig. 1-3, some embodiments of the present application provide an automatic cleaning apparatus for a reaction chamber of an epitaxial furnace, which is used for removing impurities deposited on the reaction chamber 11, the apparatus includes a reaction chamber assembly 1, the reaction chamber assembly 1 is provided with a horizontally extending reaction chamber 11, the reaction chamber 11 is communicated with one end of an air guide assembly 2, the other end of the air guide assembly 2 is connected with an air supply assembly 5 and a remote plasma generation device 6 through a switching valve 3 or an electromagnetic valve 4, and the remote plasma generation device 6 is connected with a cleaning gas supply device 7.
Specifically, the epitaxial furnace in the present application is an epitaxial furnace that uses MOCVD (metal organic chemical vapor deposition) technology, and performs a coating process by heating at a high temperature to allow a reaction gas to react in the reaction chamber 11 to achieve vapor deposition, and is particularly suitable for silicon carbide (SIC) deposition; in the case of silicon carbide deposition, the reaction temperature is up to 1700 ℃, a rotatable substrate tray (not shown) is disposed in the reaction chamber 11 of the epitaxial furnace for driving the substrate to rotate during the deposition reaction to make the epitaxial wafer deposited uniformly, so that the reaction chamber assembly 1 needs to be configured with a gas guide assembly 2 and a gas supply assembly 5 for supplying reaction gas to the horizontally extending reaction chamber 11.
More specifically, in the epitaxial reaction, the reaction gas is fed from the gas guide 2 into the reaction chamber 11 and the deposition reaction is performed under the condition that the reaction temperature is satisfied, and the gas guide 2 is connected to the reaction chamber 11, so that the side of the gas guide 2 close to the reaction chamber 11 is also raised to the reaction temperature by the heat conduction of the reaction chamber 11, and therefore, the deposition impurities of the epitaxial furnace are mainly concentrated on the reaction chamber 11 and the side of the gas guide 2 close to the reaction chamber 11; the automatic cleaning device of epitaxial furnace reaction chamber of this application embodiment sets up plasma generator into being connected with gas guide assembly 2 through diverter valve 3 or solenoid valve 4 for plasma can carry out cleaning to reaction chamber 11 and gas guide assembly 2 simultaneously, ensures that whole epitaxial furnace is by the sanitization.
More specifically, the working principle of the automatic cleaning device for the reaction chamber of the epitaxial furnace in the embodiment of the present application is as follows: after the reaction of the epitaxial furnace is finished, the gas supply module 5 is closed to supply gas, the remote plasma generating device 6 is connected to the gas guide module 2 through the switching valve 3 or the electromagnetic valve 4, the cleaning gas supplier 7 supplies cleaning gas to the remote plasma generating device 6, the cleaning gas is dissociated in the remote plasma generating device 6 to form plasma for cleaning, and the plasma is sent into the reaction cavity 11 through the gas guide module 2 and reacts with the gas guide module 2 and impurities attached to the reaction cavity 11 to remove the impurities.
More specifically, in the epitaxial reaction process, because the deposition reaction can consume reaction gas, the concentration of the reaction gas in the reaction chamber 11 gradually decreases along the conveying direction, namely, the thickness of the impurity deposited at one end of the reaction chamber 11 close to the gas guide assembly 2 is greater than the thickness of the impurity deposited at one end of the reaction chamber far away from the gas guide assembly 2, the automatic cleaning device for the reaction chamber of the epitaxial furnace of the embodiment of the application is connected with the gas supply assembly 5 and the remote plasma generation device 6 through the gas guide assembly 2, so that the conveying direction of the plasma in the cleaning process is consistent with the conveying direction of the reaction gas in the reaction process, the high-concentration plasma can react with the high-thickness impurity, namely, the plasma is matched with the thickness distribution condition of the impurity in the reaction chamber 11 for consumption, and the utilization rate and the cleaning efficiency of the plasma are effectively improved.
The automatic cleaning device of epitaxial furnace reaction chamber of this application embodiment connects long-range plasma generating device 6 on gas guide assembly 2 through diverter valve 3 or solenoid valve 4, make epitaxial furnace after the epitaxial reaction, can get through the connected relation of long-range plasma generating device 6 and reaction chamber 11 through diverter valve 3 or solenoid valve 4 fast, and send into plasma through long-range plasma generating device 6 and carry out cleaning treatment in order to gas guide assembly 2 and reaction chamber 11, it is high to have a cleaning efficiency, the cleaning performance is good, the high characteristics of cleaning gas utilization ratio.
In some preferred embodiments, the air guide assembly 2 comprises an air inlet plate 21, an air uniforming plate 22 and an air guide cylinder 23 which are connected in sequence.
Specifically, in the present embodiment, the gas cartridge 23 is connected to the reaction chamber 11.
More specifically, the gas inlet plate 21 is used for introducing a reaction gas or a cleaning gas, the gas homogenizing plate 22 is provided with a plurality of equidistantly arranged gas distribution holes for distributing the reaction gas or the cleaning gas introduced by the gas inlet plate 21 to uniformly deliver a plurality of parallel gas flows, and the gas guide tube 23 is used for feeding the parallel gas flows into the reaction chamber 11; the gas cylinder 23 is arranged to enable the gas flow to be diffused more uniformly, and can also be used as a transition piece between the gas homogenizing plate 22 and the reaction chamber 11, so that a sufficient distance is formed between the gas homogenizing plate 22 and the reaction chamber 11, and the temperature rise of the gas homogenizing plate 22 caused by the heat transfer of the reaction chamber 11 to the gas homogenizing plate 22 in the reaction process is prevented, and the temperature rise of the gas homogenizing plate 22 may cause reaction gas to react in advance to block gas distribution holes on the gas homogenizing plate 22 to influence the deposition reaction effect; in addition, in the embodiment of the present application, the plasma can generate a plasma gas flow uniformly covering the whole reaction chamber 11 under the shunting and conveying effects of the gas homogenizing plate 22 and the gas guide tube 23, so that the plasma is uniformly contacted with each position of the reaction chamber 11 on the same conveying section, so as to uniformly remove impurities and optimize the cleaning effect.
More specifically, the gas supply module 5 is used to supply the reaction gas to the gas guide module 2, which is a prior art technique, and therefore, the structural composition of the gas supply module 5 will not be described herein.
More specifically, the purge gas supplier 7 is for supplying a purge gas, may be a gas reaction apparatus for generating the purge gas, and may also be a gas supply tank in which a large amount of purge gas is stored.
In some preferred embodiments, as shown in fig. 1, a first air inlet nozzle 24 is provided in the middle of the air inlet plate 21, and the first air inlet nozzle 24 is connected with the air supply assembly 5 and the remote plasma generation device 6 through the switching valve 3.
Specifically, the automatic cleaning device for the reaction chamber of the epitaxial furnace of the embodiment directly changes the connection state of the gas guide assembly 2, the gas supply assembly 5 and the remote plasma generation device 6 by changing the state of the switching valve 3, and the gas guide assembly 2 can only be communicated with the gas supply assembly 5 or the remote plasma generation device 6 at the same time, so that the gas guide assembly 2 can only introduce reaction gas or plasma gas flow at the same time, and the use requirement of the epitaxial furnace is met, and the switching valve 3 is adopted for fast switching of the connection state, and the automatic cleaning device has the characteristic of convenience in adjustment.
More specifically, the gas supply assembly 5 and the remote plasma generating device 6 both feed gas through the first gas inlet nozzle 24, so that the flow fields of the gas flows formed by the two are nearly identical, and the formed plasma gas flow can smoothly reach the position where the impurities are deposited to remove the impurities.
In other preferred embodiments, the switching valve 3 is preferably a three-way control valve.
In other preferred embodiments, as shown in fig. 2, the remote plasma generating device 6 may be mounted on the air guide assembly 2 in another mounting manner, the air guide plate 21 is provided with at least two second air inlet nozzles 25, at least one second air inlet nozzle 25 is connected with the remote plasma generating device 6 through the electromagnetic valve 4, and the rest second air inlet nozzles 25 are connected with the air supply assembly 5 through the electromagnetic valve 4.
Specifically, the automatic cleaning device for the reaction chamber of the epitaxial furnace in the embodiment is provided with the electromagnetic valve 4 on each second air inlet nozzle 25, and is connected with the air supply assembly 5 or the remote plasma generation device 6 through the electromagnetic valve 4, so that the independent control of the air supply assembly 5 and the remote plasma generation device 6 is realized, and under special conditions, the air supply assembly 5 and the remote plasma generation device 6 can be closed at the same time, and the use safety of the epitaxial furnace is improved.
In some preferred embodiments, the number of the second air inlet nozzles 25 is three, and the second air inlet nozzles 25 are horizontally arranged at equal intervals, the second air inlet nozzle 25 in the middle is connected with the remote plasma generation device 6 through the electromagnetic valve 4, and the second air inlet nozzles 25 on two sides are connected with the air supply assembly 5 through the electromagnetic valve 4.
Specifically, the second air intake nozzle 25 for connecting the remote plasma generating device 6 is disposed at the middle of the air intake plate 21, and the remaining two second air intake nozzles 25 are symmetrically disposed at both sides of the second air intake nozzle 25 disposed at the middle of the air intake plate 21, thereby ensuring symmetry in the flow rate of the air entering the air cylinder 23 to ensure the deposition effect and the cleaning effect.
In some preferred embodiments, the reaction chamber assembly 1 comprises a graphite reaction chamber 12 and an induction coil 13, the reaction chamber 11 is located inside the graphite reaction chamber 12, and the induction coil 13 is disposed around the outside of the graphite reaction chamber 12 for inductively heating the graphite reaction chamber 12.
Specifically, in the epitaxial furnace applied in the embodiment of the present application, the reaction chamber assembly 1 can heat the graphite reaction chamber 12 through the induction coil 13 to reach the reaction temperature, so that the reaction gas fed by the gas supply assembly 5 can perform a deposition reaction in the reaction chamber 11; when cleaning, the induction coil 13 can be fed with a small reaction current, so that the temperature in the reaction chamber 11 is raised and kept at a temperature favorable for cleaning reaction, such as 200 ℃, to further activate the plasma, so that the plasma can more efficiently and sufficiently react with impurities in the reaction chamber 11, and the impurities in the reaction chamber 11 can be cleaned, thereby ensuring that the reaction chamber 11 can be cleaned.
In some preferred embodiments, the graphite reaction chamber 12 is further provided with a thermal insulation layer to make the reaction chamber 11 have a temperature stability during the deposition reaction and the cleaning process.
In some preferred embodiments, the reaction chamber 11 and the gas cylinder 23 have a rectangular parallelepiped shape, so that the plasma can be uniformly introduced into the reaction chamber 11 from the gas cylinder 23 to clean the reaction chamber 11.
In some preferred embodiments, the induction coil 13 has a hollow structure for introducing cooling water.
Specifically, the temperature of the induction coil 13 is controlled and adjusted by introducing cooling water into the induction coil 13, so that the heating temperature of the reaction chamber 11 is prevented from being influenced by the current of the induction coil 13 due to temperature rise of the induction coil 13.
In some preferred embodiments, the remote plasma generation device 6 includes a plasma generation tube 61, an intermediate frequency power supply 62, and an impedance matching box 63, and the impedance matching box 63 is connected to the plasma generation tube 61 and the intermediate frequency power supply 62.
Specifically, the cleaning gas supplied by the cleaning gas supplier 7 is supplied into the plasma generating tube 61, and the intermediate frequency power supply 62 applies intermediate frequency power to the plasma generating tube 61 through the impedance matcher 63 to excite the cleaning gas in the plasma generating tube 61 to dissociate into plasma to be fed into the gas guide assembly 2.
In some preferred embodiments, the remote plasma generating device 6 is connected to the cleaning gas supply 7 by a mass flow controller 8.
Specifically, the mass flow controller 8 is used for adjusting the flow of the cleaning gas input to the remote plasma generation device 6, so that the flow of the plasma gas flow conveyed to the reaction chamber 11 is adjustable, and the method is suitable for cleaning processes under different parameter conditions.
In some preferred embodiments, the cleaning gas supplied by the cleaning gas supplier 7 is a gas which can react with impurities in the reaction chamber 11 and the reaction products are all gaseous, for example, for an MOCVD epitaxial furnace for preparing SiC, the cleaning gas may be NF 3 Gas which reacts with solid SiC to form gaseous SiF 4 And gaseous CF 4 。
Specifically, in the present embodiment, the remote plasma generation device 6 excites the NF 3 The gas forms a plasma, thereby reducing the reaction conditions of the cleaning process and promoting the reaction of SiC to gaseous SiF 4 And gaseous CF 4 The cleaning effect of the entire reaction chamber 11 is improved and it is ensured that the reaction chamber 11 can be completely cleaned.
In some preferred embodiments, the reaction chamber 11, the gas guide 2 and the remote plasma generating device 6 are all horizontally extended.
Specifically, the reaction chamber 11, the gas guide assembly 2 and the remote plasma generating device 6 are all horizontally extended, and preferably, the respective cores are located on the horizontal line at the same height, so as to ensure that the plasma can be horizontally conveyed and guided into the reaction chamber 11 for cleaning, and avoid the disordered flow of the plasma from affecting the cleaning effect.
To sum up, the embodiment of the application provides an automatic cleaning device of epitaxial furnace reaction chamber, the device passes through diverter valve 3 or solenoid valve 4 and connects long-range plasma generating device 6 on gas guide assembly 2, make epitaxial furnace after the epitaxial reaction, can get through the connected relation of long-range plasma generating device 6 and reaction chamber 11 through diverter valve 3 or solenoid valve 4 fast, and send into plasma through long-range plasma generating device 6 and carry out cleaning treatment in order to gas guide assembly 2 and reaction chamber 11, it is high to have the cleaning efficiency, the cleaning performance is good, the high characteristics of cleaning gas utilization ratio.
In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
What has been described above are only some embodiments of the invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the inventive concept herein, and it is intended to cover all such modifications and variations as fall within the scope of the invention.
Claims (10)
1. The utility model provides an epitaxial furnace reaction chamber's self-cleaning device for clear away the impurity of deposit on reaction chamber (11), the device includes reaction chamber subassembly (1), be equipped with reaction chamber (11) that the level that extends the setting in reaction chamber subassembly (1), reaction chamber (11) and gas guide subassembly (2) one end intercommunication, its characterized in that, gas guide subassembly (2) other end is connected with gas supply subassembly (5) and long-range plasma generation device (6) through diverter valve (3) or solenoid valve (4), long-range plasma generation device (6) are connected with purge gas supply ware (7).
2. The automatic cleaning device for the reaction chamber of the epitaxial furnace according to claim 1, characterized in that the gas guide assembly (2) comprises a gas inlet plate (21), a gas homogenizing plate (22) and a gas guide cylinder (23) which are connected in sequence.
3. The automatic cleaning device for the reaction chamber of the epitaxial furnace is characterized in that a first air inlet nozzle (24) is arranged in the middle of the air inlet plate (21), and the first air inlet nozzle (24) is connected with the air supply assembly (5) and the remote plasma generation device (6) through a switching valve (3).
4. The automatic cleaning device for the reaction chamber of the epitaxial furnace according to claim 2, characterized in that the gas inlet plate (21) is provided with at least two second gas inlet nozzles (25), at least one of the second gas inlet nozzles (25) is connected with the remote plasma generation device (6) through a solenoid valve (4), and the remaining second gas inlet nozzles (25) are connected with the gas supply assembly (5) through a solenoid valve (4).
5. The automatic cleaning device for the reaction chamber of the epitaxial furnace according to claim 4, characterized in that the number of the second air inlet nozzles (25) is three and is arranged horizontally and equidistantly, the second air inlet nozzle (25) in the middle is connected with the remote plasma generating device (6) through the electromagnetic valve (4), and the second air inlet nozzles (25) on two sides are connected with the air supply assembly (5) through the electromagnetic valve (4).
6. The automatic cleaning device for the reaction chamber of the epitaxial furnace according to claim 1, characterized in that the reaction chamber assembly (1) comprises a graphite reaction chamber (12) and an induction coil (13), the reaction chamber (11) is located inside the graphite reaction chamber (12), and the induction coil (13) is arranged around the outside of the graphite reaction chamber (12) for inductively heating the graphite reaction chamber (12).
7. The automatic cleaning device for the reaction chamber of the epitaxial furnace according to claim 6, wherein the induction coil (13) is of a hollow structure and is used for introducing cooling water.
8. The automatic cleaning device for the reaction chamber of the epitaxial furnace according to claim 1, wherein the remote plasma generating device (6) comprises a plasma generating tube (61), a medium frequency power supply (62) and an impedance matcher (63), wherein the impedance matcher (63) is connected with the plasma generating tube (61) and the medium frequency power supply (62).
9. The automatic cleaning device of the reaction chamber of the epitaxial furnace according to claim 1, characterized in that the remote plasma generating device (6) is connected with the cleaning gas supplier (7) through a mass flow controller (8).
10. The automatic cleaning device for the reaction chamber of the epitaxial furnace according to any one of claims 1 to 9, characterized in that the reaction chamber (11), the gas guide assembly (2) and the remote plasma generating device (6) are all horizontally extended.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115613140A (en) * | 2022-12-16 | 2023-01-17 | 江苏邑文微电子科技有限公司 | Transverse plasma generating chamber and multifunctional high-temperature reaction device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115613140A (en) * | 2022-12-16 | 2023-01-17 | 江苏邑文微电子科技有限公司 | Transverse plasma generating chamber and multifunctional high-temperature reaction device |
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