200532933 玖、發明說明 【發明所屬之技術領域】 本發明係有關一種真空成膜裝置 太陽能電池材料。 【先前技術】 已知有加熱基板且在其表面成月莫 置，係使用化學氣相成長（CVD ) & CVD裝置以及電漿CVD裝置等，以万 (PVD )法分類的手法之蒸鍍裝置，滕 蒸鍍裝置等。 此等裝置中，於使用CVD法之裝 至特定的溫度後，藉由在保持真空的成 將包含以構成薄膜材料之元素的原料氣 藉由氣相以及基板表面的化學反應之化 望的薄膜形成於基板。在該CVD法中 成膜的基板之溫度具有與膜特性更密切 多要求在更高溫下之反應。因而，特SL 使基板溫度均勻且快速地升溫更形重要 CVD法中，電漿 CVD法近年來 域，對於大量的大面積基板之成膜係重 對於玻璃基板的成膜作爲應用領域，係 玻璃基板在基板溫度的面內分布不均勻 有這種特質的大面積基板價廉且高速升 真空成膜方法以及 薄膜之真空成膜裝 分類的手法之減壓 :使用物理氣相成長 鍍裝置以及離子化 置中，將基板加熱 ，膜室內保持基板並 (體供給至基板上， ，學氣相成長，將期 ，與PVD法比較而 的關係較多，又， 丨是在 C VD法中， ：〇 應用在工業應用領 要度增加。其中， 佔有重要的位置。 時容易破損，惟具 溫係難易度高的技 -5- 200532933 (2) 術。 因此’以往的真空成膜裝置一般僅能處理一片或兩片 之基板’生產效率低，另外若欲在該裝置同時處理3片以 上的基板時’將有裝置極大型化的問題。 以往’所提案的這種真空成膜裝置係例如特開200 1 _ 1 8 7 3 3 2號公報所示，將基板加熱至成膜溫度以上之加熱 真空室、加載互鎖真空室（load-lock chamber)、在基板 表面作成特定的薄膜之成膜真空室，一邊介存栅型閥一邊 鲁 以該順序氣密連接，在加熱真空室藉由強制對流加熱基板 的方式，藉由送風機循環供給通過熱源的氣體，將高溫氣 體供給至基板以加熱基板。200532933 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to a solar film material for a vacuum film-forming device. [Prior art] It is known that there is a heating substrate and it is not placed on the surface. It is a chemical vapor deposition (CVD) method using chemical vapor growth (CVD) & CVD equipment and plasma CVD equipment. Equipment, Teng evaporation equipment, etc. In these devices, after the CVD method is used to mount the film to a specific temperature, the film containing the elements constituting the film material is maintained in a vacuum to form a thin film that is chemically reacted by the gas phase and the chemical reaction on the substrate surface. Formed on a substrate. In the CVD method, the temperature of the substrate to be formed is closer to the characteristics of the film, and a reaction at a higher temperature is required. Therefore, special SL makes the temperature of the substrate uniform and rapid temperature increase more important. Among the CVD methods in recent years, plasma CVD method has been applied to the formation of a large number of large-area substrates. For the application of glass substrates, it is a glass application. The substrate is unevenly distributed in the surface of the substrate temperature. Large-area substrates with this characteristic are inexpensive and high-speed vacuum deposition methods and vacuum film forming and classification methods for film decompression: physical vapor deposition equipment and ions are used. During the placement, the substrate is heated, the substrate is held in the membrane chamber, and the substrate is supplied to the substrate. The phase growth is studied, and the period is more related to the PVD method. Also, in the C VD method: 〇 The application is increasing in industrial applications. Among them, it occupies an important position. It is easy to break, but it has a high degree of temperature difficulty -5- 200532933 (2). Therefore, 'the conventional vacuum film forming equipment generally can only The processing efficiency of one or two substrates is low, and if the device is to process three or more substrates at the same time, there will be a problem of extremely large equipment size. An empty film forming apparatus is shown in, for example, Japanese Patent Application Laid-Open No. 200 1 _ 1 8 7 3 3 2, a heating vacuum chamber for heating a substrate to a film forming temperature or higher, a load-lock chamber, and a substrate surface. A film-forming vacuum chamber made of a specific film is hermetically connected in this order while the gate valve is interposed. In the heating vacuum chamber, the substrate is heated by forced convection, and the gas passing through the heat source is circulated by a blower to increase the high temperature. Gas is supplied to the substrate to heat the substrate.
又，如專利第3 2 1 1 3 5 6號所示，管線式電漿CVD裝 置係連續配置有：在基板進行預備加熱的大氣加熱爐；在 真空中將從大氣加熱爐搬送而來的基板加熱至特定的溫度 之裝載室；在基板表面進行膜形成之反應室·，以及進行基 板的冷卻之卸載室。 I 根據上述特開2 0 0 1 - 1 8 7 3 3 2號公報，由於不需大型化 ， 裝置，可同時處理複數片大面積的基板，因此在基板形成 薄膜的作業之生產性大幅提升。 但是，在上述特開200 1- 1 873 3 2號公報中，以均勻溫 度在短時間內加熱基板全面甚爲困難。亦即，在特開 200 1 - 1 8 73 3 2號公報中，使已加熱的高溫氣體在基板間流 動，藉由強制對流加熱基板，高溫氣體成爲與基板的面平 行的層流而流動。即使藉由這種層流的加熱，在基板溫度 -6- 200532933 (3) 的升溫結束之時刻，於面方向獲得大致均勻的溫度，在升 溫過程中，也產生大的溫度不均勻。在層流加熱的升溫過 程中，在流動的上流側使最接近被加熱體的氣體具有的熱 傳達至被加熱體，在加熱被加熱體的同時氣體係冷卻。該 已冷卻的氣體雖沿著層流的被加熱體在下流側流動，惟在 該移動中，奪去在離開被加熱體的位置流動之高溫氣體的 熱（補給熱）再度加熱。如此，已再度加熱的氣體係使下 流側的被加熱體之溫度上升。因爲該理由，接近被加熱體 的氣體之溫度隨著在下流進行慢慢降低。因此，在利用層 流進行加熱時，與上流側相必，下流側的升溫速度變慢。 因而，被加熱體如玻璃，與溫度梯度相對爲脆弱的材質 時，在升溫途中，有因爲熱畸變引起破損的可能性。 如上所述，在層流的加熱中，使從被加熱體離開的位 置之氣體到接近被加熱體的氣體之熱傳達達到大的功效。 但是，由於與層流中的氣流相對，直角方向的傳熱由於係 擴散支配，因此其熱傳導的速度慢。結果，被加熱體的下 流側之升溫速度係表示有變慢的傾向。 又’使寬度寬（縫隙狀的）高溫氣體沿著基板流動而 加熱時’寬度方向之氣體流量容易產生偏離，當產生這種 氣體流量的偏離時，使被加熱體全體升溫至期望的溫度爲 止’有延長需要的時間之問題，又，當升溫過程之溫度梯 度明顯時’因爲熱畸變而有使被加熱體產生破損的問題。 另外，在上述專利第3211356號中，在真空中由於將 基板加熱至特定的溫度，故雖具備燈加熱器且以輻射加熱 200532933 (4 ) 進行加熱，惟有所謂加熱效率差且加熱需要長時間之問 題。再者由於以不銹鋼鏈式輸送機進行基板的移動，因此 同時加熱複數片基板較爲困難，基本上僅能一片一片地加 熱，藉此，有所謂生產性非常低的問題。 又，在上述特開2001-187332號公報中，由於以大氣 壓加熱，故每一單位產生熱量之成本低廉，且每一單位產 生熱量之碳酸氣體產生量小，雖可使用都市氣體或燈油等 作爲熱源，惟專利第3 2 1 1 3 5 6號由於係在真空中的加熱， 故無法不使用電氣能源，可說是使環境負載大的加熱方 法。 而且，在專利第3 2 1 1 3 5 6號所示的燈加熱器之加熱 中，使用高溫熱源產生的高能源密度之近紅外線。如此， 當使用高能源密度的熱源時，被加熱體的熱容量因情況不 同而有大的差異時，在升溫結束時，亦有大的面方向之溫 度不均勻產生的可能性。例如，支持被加熱體之保持器的 熱容量小，且被加熱體的熱容量大時，當被加熱體上升至 期望的溫度時，將引起保持氣的溫度異常上升。又，一般 與近紅外線相對的輻射率或反射率係根據物質的種類或表 面狀態而有大的不同。因而，當在被加熱體本身的面內或 在被加熱體與保持器之間與紅外線相對的表面性狀有不同 或變化時，無法期望有均勻且再現性優良的加熱。 本發明係有鑑於上述實情，目的係在基板進行真空成 膜之際的前處理進行的基板之加熱，在短時間內加熱至高 能率，而且在升溫途中以及加熱結束之後，以成爲均勻的 -8- 200532933 (5) 面溫度之方式，而且同時加熱複數片基板’提高太陽能電 池材料等的生產性。 【發明內容】 〔發明之揭示〕 本發明之真空成膜裝置，係將藉由基板加熱裝置加熱 之基板導入成膜室，以進行成膜，其特徵在於，上述基板 加熱裝置係具有：加熱室；與搬入至該加熱室之基板的面 具有需要的間隔而配置於加熱室之氣體導入口之扁平形狀 的板噴嘴；在該板噴嘴之氣體導入口導入加熱氣體之氣體 導入裝置；以及在與上述板噴嘴之基板相對向的面板藉由 加熱氣體的撞擊噴流加熱基板之複數個氣體噴出口。 因而，根據本發明，藉由形成於板噴嘴之氣體噴出口 導出加熱氣體，藉由撞擊噴流加熱基板，因此提高加熱效 率，可縮短基板的加熱時間。 一般，在沒有撞擊的對象物時，噴流的流動狀態係從 氣體噴出口附近依序分類爲勢核（Potential core )區域、 遷移區域、以及發達區域。藉由將成爲加熱對象的基板放 置在任一區域，使熱傳達率變化，藉由將基板配置於接近 遷移區域的發達區域，可獲得大的熱傳達率。反之，將基 板配置於遠離氣體噴出口的距離，無法獲得大的熱傳達 率。噴流的流動狀態與板噴嘴的氣體噴出口之大小有關。 在此所謂的氣體噴出口係使加熱氣體朝向基板噴出的開口 200532933 (6) 氣體噴出口之開口部的形狀係因應方形或圓形等設計 上的要件，可選擇其之形狀’惟將其噴出口的代表性尺寸 設爲B時，該B與氣體噴出口彼此的相互之間隔（距 離）Η之間期望具有H/B < 20的關係。代表性的R寸b 係例如在選擇正方形的開口時，表示正方形的一邊之長 度’在選擇圓形的開口時，表示該圓的直徑。更一般而 言’決定支配氣體噴出口部份的流動之雷諾數（Reynolds n u m b e r )時採用的尺寸爲代表性尺寸。 Φ 錯由將比H / B設爲2 0以下，可獲得工業性相當大的 加熱速度。Further, as shown in Patent No. 3 2 1 1 3 5 6, the line type plasma CVD apparatus is continuously arranged: an atmospheric heating furnace that performs preliminary heating on a substrate; and a substrate transferred from the atmospheric heating furnace in a vacuum. A loading chamber heated to a specific temperature; a reaction chamber for film formation on the substrate surface; and an unloading chamber for cooling the substrate. I According to the above-mentioned Japanese Patent Application Laid-Open No. 2000-1-1 8 7 3 3 2, because there is no need to increase the size of the device, a large number of substrates can be processed at the same time, so the productivity of forming a thin film on the substrate is greatly improved. However, in the above-mentioned Japanese Patent Application Laid-Open No. 200 1- 1 873 32, it is difficult to heat the entire substrate at a uniform temperature in a short time. That is, in Japanese Patent Application Laid-Open No. 200 1-1 8 73 3 2, the heated high-temperature gas is caused to flow between the substrates, and the substrates are heated by forced convection, and the high-temperature gas flows in a laminar flow parallel to the surface of the substrate. Even with such laminar heating, a substantially uniform temperature is obtained in the planar direction at the end of the substrate temperature -6- 200532933 (3), and large temperature unevenness is generated during the temperature rise process. During the temperature rise of laminar heating, the heat closest to the object to be heated is transmitted to the object on the upstream side of the flow, and the gas system is cooled while heating the object. Although the cooled gas flows along the laminar to-be-heated body on the downstream side, during this movement, the heat (supply heat) of the high-temperature gas flowing away from the heated body is reheated. In this way, the reheated gas system raises the temperature of the object to be heated on the downstream side. For this reason, the temperature of the gas approaching the object to be heated gradually decreases as it goes downstream. Therefore, when heating by laminar flow, it is inevitable that the temperature increase rate on the downstream side is slower than that on the upstream side. Therefore, when the object to be heated, such as glass, is a material that is relatively fragile to the temperature gradient, there is a possibility that it may be damaged due to thermal distortion during heating. As described above, in the laminar heating, the heat transfer from the gas at a position away from the heated body to a gas close to the heated body achieves a large effect. However, as opposed to laminar airflow, heat transfer in a right-angle direction is dominated by diffusion, so its heat conduction is slow. As a result, the temperature increase rate on the downstream side of the object to be heated tends to be slow. Also, when a wide (slit-shaped) high-temperature gas flows along the substrate and is heated, the gas flow in the width direction tends to deviate. When such a gas flow deviation occurs, the entire object to be heated is heated to the desired temperature. 'There is a problem that the time required is extended, and when the temperature gradient in the heating process is obvious', there is a problem that the heated body is damaged due to thermal distortion. In addition, in the above-mentioned patent No. 3211356, since the substrate is heated to a specific temperature in a vacuum, although it is provided with a lamp heater and heated by radiation heating 200532933 (4), the so-called heating efficiency is poor and the heating takes a long time. problem. Furthermore, since the substrates are moved by a stainless steel chain conveyor, it is difficult to heat a plurality of substrates at the same time. Basically, the substrates can only be heated one by one, which results in a problem of very low productivity. Furthermore, in the above-mentioned Japanese Patent Application Laid-Open No. 2001-187332, because heating is performed at atmospheric pressure, the cost of generating heat per unit is low, and the amount of carbon dioxide gas generated per unit is small. Although city gas or kerosene can be used as The heat source, but Patent No. 3 2 1 1 3 5 6 is heating in a vacuum, so it is impossible to use electrical energy, which can be said to be a heating method with a large environmental load. Further, in the heating of the lamp heater shown in Patent No. 3 2 1 1 3 5 6, near-infrared rays having a high energy density generated by a high-temperature heat source are used. In this way, when a heat source with a high energy density is used, if the heat capacity of the heated body is greatly different depending on the situation, there may be a large temperature unevenness in the plane direction at the end of the heating. For example, when the thermal capacity of the holder supporting the heated body is small and the thermal capacity of the heated body is large, when the heated body rises to a desired temperature, the temperature of the holding gas will abnormally increase. In addition, the emissivity or reflectance generally relative to near-infrared rays varies greatly depending on the kind of material and the surface state. Therefore, when there are differences or changes in the surface properties of the object to be heated that are opposite to infrared rays between the object to be heated and the holder, uniform and reproducible heating cannot be expected. In view of the above-mentioned facts, the present invention aims to heat the substrate in a short time to a high energy rate during the pre-treatment of the substrate during vacuum film formation, and to achieve a uniform -8 during the heating process and after the heating is completed. -200532933 (5) Surface temperature method, and heating multiple substrates at the same time 'improves the productivity of solar cell materials, etc. [Summary of the Invention] [Disclosure of the Invention] The vacuum film forming apparatus of the present invention is to introduce a substrate heated by a substrate heating device into a film forming chamber for film formation, and the above-mentioned substrate heating device includes a heating chamber. A flat plate nozzle arranged at a gas introduction port of the heating chamber at a required distance from the surface of the substrate carried into the heating chamber; a gas introduction device for introducing heating gas at the gas introduction port of the plate nozzle; and The panel on which the substrate of the plate nozzle is opposed to each other heats a plurality of gas ejection ports of the substrate by an impinging jet of heated gas. Therefore, according to the present invention, the heating gas is discharged through the gas ejection port formed in the plate nozzle, and the substrate is heated by the impinging jet, so that the heating efficiency is improved and the heating time of the substrate can be shortened. Generally, when there is no object to be collided, the flow state of the jet is classified into a potential core region, a migration region, and a developed region in this order from the vicinity of the gas ejection port. By placing the substrate to be heated in any area, the heat transfer rate is changed, and by placing the substrate in a developed area close to the migration area, a large heat transfer rate can be obtained. Conversely, if the substrate is placed at a distance from the gas outlet, a large heat transfer rate cannot be obtained. The flow state of the jet is related to the size of the gas outlet of the plate nozzle. Here, the so-called gas ejection port is an opening through which heated gas is ejected toward the substrate. 200532933 (6) The shape of the opening portion of the gas ejection port is based on the design requirements of a square or a circle. When the representative size of the outlet is B, it is desirable that the distance (distance) Η between the B and the gas ejection outlets has a relationship of H / B < 20. A typical R inch b indicates, for example, the length of one side of a square when a square opening is selected. When a circular opening is selected, it indicates the diameter of the circle. More generally, the size used when determining the Reynolds number (Reynolds n u m b e r) that governs the flow of the gas ejection port portion is a representative size. By setting the ratio H / B to less than or equal to 20, a relatively large industrial heating rate can be obtained.
在撞擊噴流的加熱中，進行將氣體噴出口正面的淤積 點設爲中心的局部加熱。局部性的入熱係藉由基板的橫方 向之熱移動予以緩和，在基板全體溫度上升之同時，進行 基板的均熱化。如玻璃般，在以撞擊噴流之加熱中必須充 分的考慮在局部的溫度上昇變激烈時材料將引起破損。若 玻璃的厚度充分厚，則由於玻璃面內之熱傳導變大，因此 I 玻璃面內溫度不均勻變小，又，即使玻璃噴出口的數密度 . 增加，不均勻亦變小。 爲了防止玻璃的破損，當上述基板爲厚度t的玻璃 時，將上述氣體噴出口彼此的距離設爲I*時，期望具有 r/t < 20之關係。 再者，上述板噴嘴的兩側之面板具有氣體噴出部，以 使板噴嘴的兩側之面板對峙的方式配置基板亦可。又，以 挾住上述基板之方式配置的板噴嘴係在藉由在各板噴嘴內 -10- 200532933 (7) 產生的壓力梯度產生的氣體噴出量的不均勻彼此抵消的位 置上具有氣體導入口亦可。又，上述板噴嘴以在其相互間 配置有基板之方式疏齒狀地具備複數之疏齒噴嘴亦可。 又，上述基板支持並搬送至台車，從上述板噴嘴噴出的加 熱氣體通過上述台車導入至上述加熱氣體導入裝置亦可。 以挾住基板的方式配置的板噴嘴係於藉由在各板噴嘴 內產生的壓力梯度所產生的氣體噴出量之不均勻彼此相抵 之位置上具有氣體導入口，因此更可以均勻的面溫度加熱 基板。 由於使加熱基板之後的加熱氣體通過台車，並在加熱 氣體導入裝置循環，因此加熱氣體的流動穩定，且基板的 加熱穩定。 本發明之另一態樣係真空成膜方法，使基板加熱裝置 與成膜室連結而配置，將基板搬入至基板加熱裝置，從基 板的面與具有需要的間隔之板噴嘴的面板所具備的氣體噴 出口噴出加熱氣體，藉由噴流加熱加熱基板，將基板加熱 至均勻溫度以後，將該基板搬入至成膜室，進行成膜。 上述成膜的方法亦可爲電漿CVD法。 本發明之另一局面係根據上述所製造的太陽電池材 料。 因而，根據本發明，由於藉由形成於板噴嘴之氣體噴 出口導入加熱氣體，並藉由撞擊噴流加熱基板，因此提高 加熱效率，可縮短基板的加熱時間。 200532933 (:8) 【實施方式】 以下，以圖面說明本發明之實施例。 第1圖係表示本發明之真空成膜裝置的一實施例之電 獎CVD裝置的全體配置構成的槪略平面圖，該電漿CVD 裝置係具備有：具有基板裝設部1、板噴嘴3 3之基板加 熱裝置3;具有均熱器4、減壓裝置5之加載互鎖室6、 以及具有誘導結合型電極7、減壓裝置8、原料氣體供給 裝置9、溫度調節裝置1〇之成膜室；具有外部氣體導入 馨 □ 2、減壓裝置1 2之非加載互鎖室1 3 ;以及基板取出部 14。15a、15b、15c、15d、15e係可保持氣密之可開關的 柵型閥，16係可鉛直支持並移動複數片基板17之台車。 使台車1 6所支持的基板1 7成膜之作業係以如下之方 式進行。在基板裝設部1中，在台車1 6上鉛直支持基板 I7。在第1圖之例中，在台車16上支持6片的基板17。 支持基板1 7之台車1 6係打開柵型閥1 5 a進入基板加 熱裝置3，然後在關閉柵型閥1 5 a之後，藉由板噴嘴3 3 的作用將基板1 7均勻加熱至特定的溫度。 . 然後，打開柵型閥1 5b將台車1 6移動至加載互鎖室 6，繼而在關閉柵型閥1 5b之後，藉由減壓裝置5使加載 互鎖室6內減壓至與成膜室11相同的負壓，藉由均熱器 4將上述基板1 7的溫度維持在上述特定溫度。 然後，打開柵型閥1 5 c，將基板1 7搬入至成膜室 1 1，然後在關閉柵型閥1 5 c之後，藉由減壓裝置8保持特 定的負壓之狀態下，藉由溫度調節裝置1 〇將上述基板1 7 -12- 200532933 (9) 的溫度維持在上述特定溫度’且藉由原料氣體供給裝置9 供給原料氣體，藉由誘導結合型電極7的作用在基板^ 7 形成矽膜。 當基板1 7的成膜結束時，打開柵型閥1 5d，將基板 1 7搬出至非加載互鎖室13。此時，非加載互鎖室13的內 部係藉由減壓裝置1 2預先減壓至與上述成膜室n相同的 負壓’基板1 7若搬出至非加載互鎖室1 3，則關閉柵型閥 1 5d ° 然後，打開外部氣體導入口 2，將非加載互鎖室j 3 昇壓至大氣壓之後’打開概型閥15e，將台車16導出至 外部。再將台車16移動至基板取出部14，取出台車16 所支持之成膜結束的基板1 7。 根據第1圖所不的真空成膜裝置，由於大致連續實施 基板1 7之加熱與形成已加熱的基板1 7之矽膜，因此在提 升生產性的同時，在台車1 6上支持複數片基板1 7，同時 由於可形成加熱以及矽膜，因此可謀求能率提升。 在上述第1圖之電漿CVD裝置中，在短時間內使基 板1 7加熱至特定溫度，而且以下說明成爲均勻面溫度之 方式加熱的基板加熱裝置3之詳細。 首先，在進行基板加熱裝置3的說明之前，說明台車 16。台車16係具有如第2圖至第4圖所示，在構成基板 加熱裝置3之加熱室23的內定部所設計的軌道18a、18b 上藉由車輪19可移動的矩形狀之支持台20’在該支持台 2〇的移動方向前後之邊上，於左右方向以需要的間隔使 -13- 200532933 (10) 各5條的支柱2 1、2 1，相向而鉛直固設。然後，第4圖之 最左側前後的支柱2 1、2 1，之右側面與左側第2個前後之 支柱介以各個支持具2 2支持基板1 7，以2片之基板1 7 相對向的方式配置。又，第3號與第4號之前後的支柱 2 1、2 1 ’以及第5號與第6號之前後的支柱2 1、2 1 ’亦與上 述相同，以使2片基板1 7相對向的方式支持。藉此，在 台車1 6上鉛直配置有相對向之3對、6片的基板1 7。 在上述支持台20的下面設置有前後延伸的導軌24 ’ 具有與該導軌24咬合的小齒輪25之軸26貫通加熱室23 與外部的驅動裝置2 7連結。藉此，藉由驅動驅動裝置2 7 使上述小齒輪25旋轉，介以導軌24使上述台車16沿著 軌道18a、18b移動。此時，上述軌道18a、18b爲了設置 第1圖的柵型閥15a、15b、15c、15d、15e而切斷，藉 此，上述驅動裝置27與小齒輪25係與裝載室6 '成膜室 1 1、非裝載室1 3個別對應而設置，台車1 6以超越上述軌 道18a、18b的切斷部分而移動之方式具備有複數個車輪 19° 在上述加熱室2 3的內部如弟2圖所不設置有：分隔 上述台車1 6的上部之上部分隔板2 8 ;以及分隔台車1 6 之移動方向一側（右側）的側部分隔板29 ’側部分隔板 2 9的上端固定在上部分隔板2 8 ’下端係延伸至支持台2 0 的附近。再者，右側的軌道1 8 b係如第4圖所示’具有將 梯子設爲橫之形狀’形成有氣體流通用的開口 3 0。再 者，支持上述台車1 6之基板1 7的支持台20係形成使在 -14- 200532933 (11 ) 基板17間流下的加熱氣體朝向下方而流下的氣體通路 3 6。藉此，上述加熱室23的內部係形成有氣體循環流路 3 1 :該氣體循環流路係連通：台車1 6上的基板1 7間、台 車1 6的下部、側部分隔板29的右側下部、以及上部分隔 板2 8之右側上部，構成加熱氣體導入裝置3 2的一部。 上述上部分隔板2 8之下部在與台車1 6相對向支持的 基板1 7之中間對應的位置上，固定具有與基板1 7平行且 面積比基板1 7大的矩形扁平形狀之板噴嘴3 3的上端，板 噴嘴3 3的上端形成有使上部分隔板2 8的上側之氣體循環 流路3 1與板噴嘴3 3的內部連通的氣體導入口 34。因 而，上述板噴嘴33係呈現在上部形成有氣體導入口 34之 扁平的袋狀。在第2圖中，係以3組的相對向基板1 7間 對應的方式，使3個板噴嘴3 3與上部分隔板2 8相對設置 成疏齒狀。 具有與上述扁平袋狀之板噴嘴3 3的基板1 7相對向的 面板3 3 a係如第2圖、第5圖、第6圖所示，藉由形成與 基板1 7的面相對，鉛直噴出加熱氣體而撞擊之複數個氣 體噴出口 35，構成氣體噴出部A。該氣體噴出部A的氣 體噴出口 35之配置係基板17的溫度分布在實用上均一者 較佳，因而如格子狀或千鳥狀規則者亦可，以成爲固定的 面密度之方式不規則的配置亦可。 上述加熱氣體導入裝置32係在上述氣體循環流路31 的上下中間位置設置隔壁3 7，形成於該隔壁3 7的開口部 設置藉由驅動裝置38旋轉驅動的循環扇39，再者，在具 -15- 200532933 (12) 有上述氣體循環流路3 1內之隔壁3 7與上述開口 3 0之軌 道1 8b之間設計有加熱氣體之氣體加熱器40。第2圖所 示的氣體加熱器40係在比上述循環扇3 9下側的氣體循環 流路3 1配置傳熱管4 1，在該傳熱管4 1介以調節閥4 2供 給高溫氣體，藉由熱交換加熱氣體。又，除了在上述傳熱 管4 1加熱氣體的方法以外，例如將燃燒筒設置在氣體循 環流路3 1，以燃燒筒燃燒燃料，加熱氣體亦可，此時， 藉由上述調節閥42調節燃料流量。此外，比上部分隔板 2 8更上部的位置設置有高溫用過濾器43。 又，上述加熱室23內的氣體溫度，以具備有用以檢 測上部分隔板28的正上方之氣體溫度的溫度檢測器44較 理想，且具有輸入該溫度檢測器44的檢測溫度，使該檢 測溫度保持在特定的固定値之方式，調節上述調節閥 42，以調節藉由氣體加熱器40加熱氣體之溫度調節器 45 ° 在第2圖及第5圖中，於板噴嘴3 3的兩側之面板 33a具有氣體噴嘴出口 35之氣體噴出部A，且以與該氣體 噴出部A相對向的方式配置基板1 7，藉此，雖僅表示加 熱基板1 7的一方之面的情況，惟如第7圖所示，僅板噴 嘴3 3的一側之面板3 3 a具有氣體噴出部A而僅加熱基板 1 7的一方之面亦可。另外，如第8圖所示，在板噴嘴3 3 的兩側之面板33a具備氣體噴出部A，藉由來自氣體噴出 口 3 5之加熱氣體的噴射，同時加熱基板1 7的兩面亦可。 又，如第9圖的切斷平面圖所示，以挾住上述基板 -16- (13) 200532933 17的方式配置’在與基板17相對向的面具有氣體噴出部 A之板噴嘴3 3中，藉由在各板噴嘴3 3內產生的壓力梯度 產生的氣體噴出量之不均一彼此相抵之位置具有氣體導入 口 3 4較爲理想。亦即，以挾住基板1 7之板噴嘴3 3所具 備的氣體導入口 3 4相互位於相反側（上下相反側或是左 右相反側）之端部的方式形成亦可。在第9圖中，於一方 (左側）的板噴嘴3 3在紙面的上部具有氣體導入口 3 4， 另一方（右側）之板噴嘴3 3在紙面的下側具有氣體導入 口 34。因而，從一方的氣體導入口 34導入至一方的板噴 嘴33之加熱氣體、以及從另一方的氣體導入口 34導入至 另一方的板噴嘴3 3之氣體彼此相反方向相對而流動從各 氣體噴出口 3 5噴出。 以下，說明上述實施例之作用。 在第2圖之構成中，藉由驅動裝置38驅動循環扇 3 9，使氣體循環流路3 1內的氣體從下朝上流動之同時， 在氣體加熱器40的傳熱管4 1供給高溫流體以加熱氣體。 以氣體加熱器40加熱的高溫氣體係從循環扇39傳送到高 溫用過濾器43而淸淨之後，從氣體導入口 34導入至各板 噴嘴3 3內，以從形成於板噴嘴3 3之面板3 3 a之氣體噴出 部A的複數個氣體噴出口 3 5鉛直與基板1 7的面撞擊之 方式噴塗。藉此，加熱基板1 7。 噴塗在基板1 7而加熱基板1 7後的加熱氣體係在對向 的基板17間流下，通過支持台20的氣體通路3 6向下方 流動，經過軌道1 8b再度導入至氣體加熱器40。 -17- 200532933 (:14) 此時，輸入設置在上部分隔板28的上部之溫度檢測 器44的檢測氣體溫度之溫度調節器45，藉由調節閥42 調節高溫流體的流量，以經常保持在特定的固定値之方式 控制導入至板噴嘴3 3之加熱氣體的溫度。藉此，基板1 7 係經常確實加熱目的之特定溫度。又，在供給至上述的氣 體加熱器40之高溫流體的流量之方式以外，調節循環扇 3 9之加熱氣體的循環量以調節基板1 7的加熱溫度亦可。 如第5圖、第7圔、第8圖所示，板噴嘴3 3係藉由 氣體噴出部A之各氣體噴出口 35鉛直撞擊加熱氣體噴塗 至基板1 7的面，因此藉由加熱氣體的撞擊產生的撞擊噴 流，基板1 7係以高效率加熱。 第1 〇圖係如第5圖、第7圖、第8圖所示，比較以 在基板1 7的面撞擊加熱氣體之方式鉛直噴塗，藉由撞擊 噴流加熱基板之情況（實線），與上述特開200 1 - 1 8 73 3 2 號公報所示的習知例般，藉由與基板平行的沿面流（層 流）之加熱氣體加熱基板之情況（虛線）之時間的經過與 基板1 7的溫度變化之關係。在第1 〇圖中，定性顯示使用 相同的加熱氣體流量加熱至目標溫度範圍時的基板1 7之 溫度變化。 從第10圖可淸楚得知，層流之加熱（虛線）係比本 發明的撞擊噴流之加熱（實線）至到達目標溫度範圍需要 更長時間。因而，在層流的加熱中，以縮短加熱時間之情 況，必須大幅增大加熱氣體的供給，因而導致運轉成本增 加。又，如此，使大量的加熱氣體沿著基板1 7流動時’ -18- (15) 200532933 難以使在基板1 7的寬度方向之流量成爲均一’因此’將 更容易產生基板17的面溫度不均一之問題。 如上所述，藉由在板噴嘴3 3的面板3 3 a所具有的氣 體噴出部A之氣體噴出口 3 5，使加熱氣體鉛直撞擊噴塗 在基板1 7的面，藉由撞擊噴流加熱基板1 7，因此在短時 間內以高效率加熱基板1 7。 再者，在上述面板33a具有的氣體噴出部A的氣體噴 出口 35由於在面方向均勻加熱基板17之配置而形成，因 此可以較佳精確度均勻加熱基板1 7之面溫度。 在本發明的實施例中，將氣體噴出口 3 5設爲圓形。 又，實驗的中心條件係將其直徑B設爲3 mm，又將面板 3 3a與基板17之間隔Η設爲30mm。將直徑B設爲固定， 使間隔Η在1 5 m m至1 5 0 m m的範圍內變化，測定基板1 7 的升溫速度。結果，從15mm至20mm爲止，雖然升溫速 度大致上沒有變化，惟從1 5mm至30mm —但升溫速度上 升取最大値，然後，以3 0mm以上的間隔使升溫速度降 低。在間隔6 0 m m中，使最大値之6成左右的升溫速度降 低。將氣體噴出口 3 5的直徑設爲2 m m進行相同的實驗， 惟在間隔4 0 m m以上時，升溫速度的降低激烈。 一般，在撞擊噴流之加熱中，熱傳達率因爲間隔Η 或直徑Β或流速等複雜地變化，因此無法統一的記述熱傳 達率。但是’根據實驗，加上在工業上可應用的流速等之 條件，將比Η/Β保持在20以下時，已知可使基板1 7高速 升溫。 -19- 200532933 (16) 又，在本實施例中，將氣體噴出口 3 5之間距r設爲 3 5mm配列成正方形的格子狀，使用厚度4mm的玻璃作爲 基板1 7進行實驗。測定氣體噴射口 3 5正面之淤積點與離 氣體噴射口 3 5最遠的位置之溫度差。以實驗的中心條件 進行加熱時，在升溫過程中，該點的最大溫度差係成爲 3 0 : C。經驗可知當玻璃基板的面內溫度差超過5 0 °C時， 破損之確率上升。在本實施例中，可知不需要擔心破損。 但是，例如，藉由將氣體噴射口 35之間距放大爲60mm 以上時，可知因爲玻璃面內之溫度差導致玻璃基板破損。 又，當玻璃基板之厚度變薄至2 mm左右以下時，由於玻 璃基板的面內之熱移動變慢，因此推測有破損。 另外，從具有袋形狀的板噴嘴3 3之上端的氣體導入 P 34導入至板噴嘴33之加熱氣體係藉由壓力在上部與下 部變化，與從上部之氣體噴出口 3 5噴出的加熱氣體量相 對，使從下部之氣體噴出口 3 5噴出的加熱氣體量減少， 因此’在基板1 7的加熱溫度上下有產生偏差的可能性。 但是，實際上判斷大致上不產生溫度的偏差。亦即，上部 的氣體噴出口 35之氣體噴出量與下部的氣體噴出口 35之 氣體噴出量大致相同，在縮小板噴嘴3 3的上流側與下流 側之壓力差甚爲有效，因此，藉由加大設計板噴嘴3 3之 空間容量’使上流之氣體噴出量與下流之氣體噴出量略相 等’可使溫度的偏差大致消失。 另外，如第9圖所示，以挾住基板1 7之方式配置的 板噴嘴3 3之氣體導入口 3 4相互形成於相反側的端部而構 -20 - 200532933 (17) 成，使板噴嘴3 3內的壓力之變化彼此成爲反方向而抵 消，藉此挾住基板1 7而設計的左右之板噴嘴3 3所噴出的 加熱氣體之噴出量的和在長邊方向（在第9圖爲上下方 向）成爲均等，藉此，可以均勻溫度加熱基板。 如上所述，藉由基板加熱裝置3以特定的溫度加熱至 均一的面溫度之基板1 7係搬入至第1圖的裝載室6，藉 由均熱器4維持其溫度，然後，基板1 7被搬入至成膜室 1 1，進行矽膜之形成，惟此時藉由成膜室1 1所具備之溫 度調節裝置1 0使基板1 7維持在上述特定的溫度。因而， 基板1 7係在保持均一面溫度之狀態下進行矽膜的形成， 因此在基板1 7形成有良好品質之矽膜。 因而’根據上述真空成膜裝置，可以高能率生產高品 質的太陽電池材料。 此外’本發明並非限定於上述實施例，亦可應用在除 了電漿CVD裝置以外之濺鍍裝置、蒸鍍裝置、離子化蒸 鍍裝置等需要加熱基板之真空成膜裝置，可變更各種板噴 嘴之形狀’加熱器體導入裝置可採用上述實施例以外的構 成者’在不脫離本發明之主旨的範圍內當然可獲得各種變 更。 〔產業上利用的可能性〕 在基板進行真空成膜處理之際的前處理進行的基板之 加熱，在短時間內可以高能率進行，再者，於升溫途中以 及加熱結束之後’可獲得均一的面溫度，而且可同時加熱 -21 - (18) (18)200532933 複數片基板，藉此，可以高能率生產高品質的太陽電池材 料等之製品。 【圖式簡單說明】 第1圖係表示本發明之真空成膜裝置的全體配置構成 的槪略平面圖。 第2圖係表示本發明之真空成膜裝置的基板加熱裝置 之一例的切斷正面圖。 第3圖係台車的正面圖。 第4圖係台車與軌道的一部份之斜視圖。 第5圖係放大表示第2圖之板噴嘴的一部份之剖面 圖。 第6圖係用以說明形成於板噴嘴的面板之氣體噴出孔 的斜視圖。 第7圖係藉由板噴嘴加熱基板的其他實施例之部份剖 面圖。 第8圖係藉由板噴嘴加熱基板之又一實施例的部份剖 面圖。 第9圖係以挾住基板的方式配置的板噴嘴之氣體導入 口相互形成於相反側端部時的切斷平面圖。 第1 0圖係藉由本發明之撞擊噴流加熱基板時，與藉 由以往的層流加熱基板時之時間的經過與基板的溫度之變 化的關係之線圖。 -22- (19) (19)200532933 主要元件對照表 1基板裝設部 2外部氣體導入口 3基板加熱裝置 4 均熱器 5、8、1 2 減壓裝置 6加載互鎖室 7誘導結合型電極 9原料氣體供給裝置 1 〇溫度調節裝置 1 1成膜室 1 3非加載互鎖室 1 4基板取出部 15a' 15b、 15c、 15d、 15e 柵型閥 16 台車 17基板 18a' 18b 軌道 19車輪 2 〇 支持台 2 1支柱 22支持具 2 3 加熱室 24 導軌 2 5副齒輪 -23- 200532933 (20) 26軸 27 > 38驅動裝置 2 8上部分隔板 2 9下部分隔板 30 開口 3 1氣體循環流路 32加熱氣體導入裝置 3 3 板噴嘴 3 3 a面板 34氣體導入口 35氣體噴出口 36氣體通路 3 7 隔壁 3 9循環扇 40氣體加熱器 4 1傳熱管 4 2調節閥 4 3 高溫用過濾器 44溫度檢測器 4 5 溫度調節器 -24-In the heating of the impinging jet, local heating is performed with the deposition point on the front side of the gas ejection port as the center. The localized heat input is alleviated by the heat transfer in the lateral direction of the substrate, and the substrate is uniformly heated while the temperature of the entire substrate is increased. Like glass, it must be fully considered in the heating by impinging jets that the material will break when the local temperature rise becomes intense. If the thickness of the glass is sufficiently thick, since the heat conduction in the glass surface becomes larger, the temperature unevenness in the glass surface becomes smaller, and even if the number density of the glass nozzle is increased, the unevenness becomes smaller. In order to prevent damage to the glass, when the substrate is a glass having a thickness t, it is desirable to have a relationship of r / t < 20 when the distance between the gas ejection ports is set to I *. Further, the panels on both sides of the plate nozzle may have gas ejection portions, and the substrate may be arranged so that the panels on both sides of the plate nozzle face each other. In addition, the plate nozzles arranged so as to hold the substrates have gas introduction ports at positions where unevenness in the gas ejection amount caused by the pressure gradient generated in each plate nozzle -10- 200532933 (7) cancels each other out. Yes. The plate nozzle may be provided with a plurality of sparsely sparsely toothed nozzles so that a substrate is disposed between them. The substrate may be supported and transferred to a trolley, and the heated gas sprayed from the plate nozzle may be introduced into the heated gas introduction device through the trolley. The plate nozzles arranged to hold the substrate are provided with gas introduction ports at positions where the unevenness of the gas ejection amount caused by the pressure gradient generated in each plate nozzle cancels each other, so that it can be heated at a uniform surface temperature. Substrate. Since the heating gas after heating the substrate is passed through the trolley and circulated in the heating gas introduction device, the flow of the heating gas is stable and the heating of the substrate is stable. Another aspect of the present invention is a vacuum film forming method in which a substrate heating device and a film forming chamber are connected and arranged, and the substrate is carried into the substrate heating device. The surface of the substrate and a panel with a plate nozzle having a required interval are provided. The gas ejection port ejects a heating gas, heats the substrate by a jet stream, and heats the substrate to a uniform temperature, and then carries the substrate into a film forming chamber for film formation. The above-mentioned film formation method may be a plasma CVD method. Another aspect of the present invention is the solar cell material manufactured according to the above. Therefore, according to the present invention, since a heating gas is introduced through a gas discharge port formed in a plate nozzle, and a substrate is heated by an impinging jet, the heating efficiency is improved and the heating time of the substrate can be shortened. 200532933 (: 8) [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view showing the overall configuration of an electric CVD apparatus according to an embodiment of the vacuum film forming apparatus of the present invention. The plasma CVD apparatus is provided with a substrate mounting section 1 and a plate nozzle 3 3 Substrate heating device 3; load interlocking chamber 6 with heat spreader 4, decompression device 5, and film formation with induction bonding electrode 7, decompression device 8, raw material gas supply device 9, and temperature adjustment device 10 Room; non-loading interlocking chamber 1 3 for pressure reducing device 12; and substrate take-out section 14. 15a, 15b, 15c, 15d, 15e are switchable grid types that can maintain airtightness Valve, 16 is a trolley that can support and move multiple substrates 17 vertically. The process of forming the substrate 17 supported by the trolley 16 is performed in the following manner. In the substrate mounting portion 1, a substrate I7 is vertically supported on a trolley 16. In the example of FIG. 1, six substrates 17 are supported on the trolley 16. The trolley 1 supporting the substrate 1 7 opens the gate valve 1 5 a and enters the substrate heating device 3. After closing the gate valve 1 5 a, the substrate 17 is uniformly heated to a specific temperature by the action of the plate nozzle 3 3. temperature. Then, the gate valve 15b is opened to move the trolley 16 to the loading interlocking chamber 6, and after the gate valve 15b is closed, the pressure in the loading interlocking chamber 6 is decompressed to a film formation by the pressure reducing device 5. In the same negative pressure in the chamber 11, the temperature of the substrate 17 is maintained at the specific temperature by the heat spreader 4. Then, the gate valve 1 5 c is opened, the substrate 17 is carried into the film formation chamber 11, and after the gate valve 1 5 c is closed, the pressure reducing device 8 maintains a specific negative pressure, and The temperature adjustment device 1 〇 maintains the temperature of the substrate 1 7 -12- 200532933 (9) at the above-mentioned specific temperature, and supplies the source gas through the source gas supply device 9, and acts on the substrate by the action of the induced bonding electrode 7 ^ 7 A silicon film is formed. When the film formation of the substrate 17 is completed, the gate valve 15d is opened, and the substrate 17 is carried out to the non-loading interlocking chamber 13. At this time, the interior of the non-loading interlocking chamber 13 is decompressed in advance by the pressure reducing device 12 to the same negative pressure as the above-mentioned film forming chamber n. The substrate 17 is brought out to the non-loading interlocking chamber 13 and closed. Gate valve 1 5d ° Then, open the outside air introduction port 2 and pressurize the non-loading interlocking chamber j 3 to atmospheric pressure. 'Open the general valve 15e and export the trolley 16 to the outside. Then, the trolley 16 is moved to the substrate taking-out section 14, and the substrates 17 on which film formation supported by the trolley 16 is taken out. According to the vacuum film forming apparatus shown in FIG. 1, since the heating of the substrate 17 and the formation of the silicon film of the heated substrate 17 are performed continuously, the productivity is improved, and a plurality of substrates are supported on the trolley 16. 17 At the same time, because heating and silicon film can be formed, energy efficiency can be improved. In the plasma CVD apparatus shown in Fig. 1, the substrate 17 is heated to a specific temperature in a short period of time, and the details of the substrate heating apparatus 3 heated to a uniform surface temperature will be described below. First, before describing the substrate heating apparatus 3, the carriage 16 will be described. The trolley 16 has a rectangular support table 20 'which is movable by wheels 19 on the tracks 18a and 18b designed in the inner portion of the heating chamber 23 constituting the substrate heating device 3 as shown in Figs. 2 to 4. On the front and back sides of the support table 20 in the moving direction, -13-200532933 (10) five pillars 2 1 and 2 1 facing each other are fixed vertically. Then, the leftmost front and rear pillars 21, 21 in FIG. 4, the right side and the second front and rear pillars on the left side are each supported by a support 22, a substrate 1 7, and two substrates 1 7 facing each other. Way configuration. The pillars 2 1 and 2 1 ′ before and after No. 3 and No. 4 and the pillars 2 1 and 2 1 ′ before and after No. 5 and No. 6 are the same as those described above so that the two substrates 17 are opposed to each other. Directional support. As a result, three pairs of six substrates 17 facing each other are vertically arranged on the trolley 16. On the lower surface of the support table 20, a guide rail 24 'extending forward and backward is provided. A shaft 26 having a pinion 25 engaged with the guide rail 24 penetrates the heating chamber 23 and is connected to an external drive device 27. Thereby, the pinion 25 is rotated by driving the driving device 27, and the trolley 16 is moved along the rails 18a, 18b via the guide rail 24. At this time, the rails 18a and 18b are cut off in order to provide the gate valves 15a, 15b, 15c, 15d, and 15e shown in FIG. 1, whereby the drive device 27 and the pinion 25 are connected to the loading chamber 6 ′ film forming chamber. 1 1. The non-loading chambers 1 and 3 are provided correspondingly. The trolley 16 is provided with a plurality of wheels 19 ° so as to move beyond the cut-off portions of the rails 18a and 18b. The interior of the heating chamber 2 3 is as shown in Figure 2 What is not provided are: a partition plate 2 8 above the upper portion partitioning the trolley 16; and a side partition plate 29 'on the side (right side) separating the movement direction of the trolley 16; the upper end of the side partition plate 29 is fixed to The lower part of the upper partition plate 2 8 'extends to the vicinity of the support table 20. In addition, the right rail 18 b is formed as shown in Fig. 4 'with a ladder in a horizontal shape' and has a general opening 30 for gas flow. In addition, the support table 20 supporting the substrate 17 of the trolley 16 is formed as a gas passage 36 for heating gas flowing between the substrates -14-200532933 (11) to flow downward. As a result, a gas circulation flow path 3 1 is formed in the interior of the heating chamber 23: The gas circulation flow path is connected: the base plate 17 on the trolley 16, the lower portion of the trolley 16, and the right side of the side partition 29. The lower part and the right upper part of the upper partition plate 28 constitute a part of the heating gas introduction device 32. The upper part of the partition plate 2 8 above is fixed at a position corresponding to the middle of the substrate 17 supported oppositely by the trolley 16, and a plate nozzle 3 having a rectangular flat shape parallel to the substrate 17 and larger in area than the substrate 17 is fixed. At the upper end of 3, the upper end of the plate nozzle 33 is formed with a gas introduction port 34 that communicates the gas circulation flow path 31 on the upper side of the upper partition plate 28 with the inside of the plate nozzle 33. Therefore, the plate nozzle 33 has a flat bag shape in which a gas introduction port 34 is formed in the upper portion. In the second figure, the three plate nozzles 33 are arranged opposite to the upper partition plate 28 in a sparsely toothed manner so as to correspond to three groups of opposing substrates 17 and 17. The panel 3 3 a having the substrate 17 facing the flat bag-shaped plate nozzle 3 3 is as shown in FIG. 2, FIG. 5, and FIG. 6. The plurality of gas ejection ports 35 impinging upon the ejection of the heated gas constitute a gas ejection section A. The arrangement of the gas ejection outlets 35 of the gas ejection portion A is preferably a uniform temperature distribution of the substrate 17. Therefore, if the lattice shape or the houndstooth shape is regular, it may be irregularly arranged so as to have a fixed areal density. Yes. The heating gas introduction device 32 is provided with a partition wall 37 at the upper and lower intermediate positions of the gas circulation flow path 31, and an opening portion formed in the partition wall 37 is provided with a circulation fan 39 that is rotationally driven by a driving device 38. -15- 200532933 (12) A gas heater 40 for heating gas is designed between the partition wall 37 in the above-mentioned gas circulation flow path 31 and the track 18b in the above-mentioned opening 30. The gas heater 40 shown in FIG. 2 is provided with a heat transfer tube 41 in a gas circulation channel 3 1 below the circulation fan 39, and a high-temperature gas is supplied to the heat transfer tube 41 through a regulating valve 4 2 Heating gas by heat exchange. In addition to the method for heating the gas in the heat transfer tube 41, for example, a combustion tube is provided in the gas circulation flow path 31, and the fuel can be heated by the combustion tube. In this case, the gas is adjusted by the regulating valve 42. Fuel flow. A high-temperature filter 43 is provided above the upper partition plate 28. The temperature of the gas in the heating chamber 23 is preferably provided with a temperature detector 44 for detecting the temperature of the gas directly above the upper partition plate 28, and has a detection temperature input to the temperature detector 44 to make the detection The temperature is maintained in a specific fixed manner, and the above-mentioned regulating valve 42 is adjusted to adjust the temperature regulator of the gas heated by the gas heater 40 45 °. In FIG. 2 and FIG. 5, on both sides of the plate nozzle 3 3 The panel 33a has a gas ejection portion A of a gas nozzle outlet 35, and the substrate 17 is arranged so as to face the gas ejection portion A. This shows that only one side of the substrate 17 is heated. As shown in FIG. 7, only the panel 3 3 a on one side of the plate nozzle 33 may have the gas ejection portion A, and only one side of the substrate 17 may be heated. In addition, as shown in Fig. 8, the panels 33a on both sides of the plate nozzle 3 3 are provided with gas ejection portions A, and both sides of the substrate 17 may be heated at the same time by spraying heated gas from the gas ejection port 35. As shown in the cut-away plan view of FIG. 9, the substrate -16- (13) 200532933 17 is arranged so as to hold the substrate nozzle 33 provided with a gas ejection portion A on a surface facing the substrate 17. It is preferable to have a gas introduction port 3 4 at a position where the unevenness of the gas ejection amount caused by the pressure gradient generated in each of the plate nozzles 3 and 3 cancels each other. That is, it may be formed so as to hold the gas introduction ports 34 provided in the plate nozzles 3 of the substrate 17 at the opposite ends (upper and lower opposite sides or right and left opposite sides). In FIG. 9, the plate nozzle 3 3 on one side (left side) has a gas inlet 34 on the upper side of the paper surface, and the plate nozzle 33 on the other side (right side) has a gas inlet 34 on the lower side of the paper surface. Therefore, the heated gas introduced from one gas introduction port 34 to one plate nozzle 33 and the gas introduced from the other gas introduction port 34 to the other plate nozzle 33 are opposed to each other and flow from each gas jet. Exit 3 5 spurts. The operation of the above-mentioned embodiment will be described below. In the structure of FIG. 2, the circulation fan 39 is driven by the driving device 38 so that the gas in the gas circulation flow path 31 flows from the bottom to the top, and the heat transfer tube 41 of the gas heater 40 is supplied with high temperature. Fluid to heat the gas. The high-temperature gas system heated by the gas heater 40 is transferred from the circulation fan 39 to the high-temperature filter 43 and cleaned, and then introduced into each of the plate nozzles 33 from the gas introduction port 34 so as to be removed from the panel formed on the plate nozzles 33. The gas ejection outlets 3 of the gas ejection portion A of 3 3 a are sprayed in such a manner that they collide with the surface of the substrate 17 vertically. Thereby, the substrate 17 is heated. The heated gas system sprayed on the substrate 17 and heated the substrate 17 flows down between the opposing substrates 17, flows downward through the gas passage 36 of the support table 20, and is reintroduced to the gas heater 40 via the rail 18b. -17- 200532933 (: 14) At this time, the temperature regulator 45 for detecting the gas temperature of the temperature detector 44 provided on the upper part of the upper partition plate 28 is input, and the flow rate of the high-temperature fluid is adjusted by the regulating valve 42 so as to keep it constantly The temperature of the heating gas introduced into the plate nozzle 33 is controlled in a specific manner. As a result, the substrate 17 is always heated to a specific temperature for a specific purpose. Furthermore, in addition to the method of the flow rate of the high-temperature fluid supplied to the gas heater 40 described above, the circulation amount of the heating gas of the circulation fan 39 may be adjusted to adjust the heating temperature of the substrate 17. As shown in FIG. 5, FIG. 7, and FIG. 8, the plate nozzles 33 are sprayed onto the surface of the substrate 17 by the gas ejection ports 35 of the gas ejection part A directly hitting the heating gas. The impinging jet produced by the impingement heats the substrate 17 with high efficiency. Fig. 10 is a comparison of the case where the substrate is heated by the impact of a heated gas on the surface of the substrate 17 as shown in Fig. 5, Fig. 7, and Fig. 8 (solid line). In the conventional example shown in the above-mentioned Japanese Patent Application Laid-Open No. 200 1-1 8 73 3 2, when a substrate is heated by a heating gas parallel to the substrate (laminar flow) (dotted line), the passage of time and the substrate 1 7 the relationship between temperature changes. In Fig. 10, the temperature change of the substrate 17 when it is heated to the target temperature range with the same heating gas flow rate is qualitatively shown. It can be clearly seen from Fig. 10 that the laminar heating (dashed line) takes longer than the heating (solid line) of the impinging jet of the present invention to reach the target temperature range. Therefore, in the case of laminar heating, in order to shorten the heating time, it is necessary to greatly increase the supply of heating gas, resulting in an increase in operating costs. In addition, when a large amount of heating gas flows along the substrate 17 '-18- (15) 200532933, it is difficult to make the flow rate in the width direction of the substrate 17 uniform. Therefore, the surface temperature of the substrate 17 is more likely to occur. The problem of uniformity. As described above, the gas ejection port 35 of the gas ejection portion A provided in the panel 3 3 a of the plate nozzle 3 3 causes the heated gas to directly hit and spray the surface of the substrate 17, and the substrate 1 is heated by the impinging jet. 7, so the substrate 17 is heated with high efficiency in a short time. In addition, the gas ejection port 35 of the gas ejection portion A provided in the panel 33a is formed by uniformly heating the substrate 17 in the planar direction, so that the surface temperature of the substrate 17 can be uniformly and accurately heated. In the embodiment of the present invention, the gas ejection port 35 is set in a circular shape. The central condition of the experiment was to set the diameter B to 3 mm and the distance Η between the panel 3 3a and the substrate 17 to 30 mm. The diameter B was fixed, and the interval Η was changed within a range of 15 m to 150 m, and the temperature rising rate of the substrate 17 was measured. As a result, from 15 mm to 20 mm, although the rate of temperature increase did not change, but from 15 mm to 30 mm-the rate of temperature rise increased to the maximum, and then the rate of temperature increase was reduced at intervals of 30 mm or more. At an interval of 60 mm, the heating rate is reduced by about 60% of the maximum temperature. The same experiment was performed by setting the diameter of the gas outlet 35 to 2 mm. However, when the interval was more than 40 mm, the decrease in the heating rate was severe. Generally, in the heating of impinging jets, the heat transfer rate is complicatedly changed due to the interval Η, the diameter B, or the flow velocity, and so the heat transfer rate cannot be described uniformly. However, it is known that the substrate 17 can be heated at a high speed when the ratio Η / B is kept below 20 based on experiments and conditions such as industrially applicable flow rates. -19- 200532933 (16) In this example, the distance r between the gas ejection ports 35 was set to be 35 mm and arranged in a square grid pattern, and a glass with a thickness of 4 mm was used as the substrate 17 for experiments. Measure the temperature difference between the deposition point on the front of the gas injection port 35 and the position farthest from the gas injection port 35. When heating under the central conditions of the experiment, the maximum temperature difference at this point during heating is 30: C. It is known from experience that when the in-plane temperature difference of the glass substrate exceeds 50 ° C, the probability of breakage increases. In this embodiment, it is understood that there is no need to worry about breakage. However, for example, when the distance between the gas injection ports 35 is enlarged to 60 mm or more, it is found that the glass substrate is damaged due to a temperature difference in the glass surface. When the thickness of the glass substrate is reduced to about 2 mm or less, the heat transfer in the surface of the glass substrate is slowed, so that the glass substrate may be damaged. In addition, the heating gas system introduced from the upper end of the plate nozzle 33 having a bag-shaped plate nozzle 3 3 to the plate nozzle 33 is changed in pressure from the upper part to the lower part, and the amount of heating gas ejected from the upper gas outlet 35 On the other hand, since the amount of heated gas discharged from the lower gas outlet 35 is reduced, there is a possibility that a deviation may occur between the heating temperature of the substrate 17. However, in practice, it is judged that there is almost no temperature deviation. That is, the gas ejection amount of the upper gas ejection port 35 is approximately the same as the gas ejection amount of the lower gas ejection port 35, and the pressure difference between the upstream side and the downstream side of the reduction plate nozzle 33 is very effective. Increasing the space capacity of the nozzle 33 of the design plate 'makes the amount of gas ejected from the upper stream slightly equal to the amount of gas ejected from the lower stream', so that the temperature deviation can be substantially eliminated. In addition, as shown in FIG. 9, the gas inlets 3 4 of the plate nozzles 3 3 arranged to hold the substrate 17 are formed at opposite ends of each other to form -20-200532933 (17). The pressure changes in the nozzles 3 and 3 are opposite to each other and cancel each other, so that the sum of the discharge amounts of the heating gas from the left and right plate nozzles 3 and 3 designed to hold the substrate 17 is in the long direction (in FIG. 9). (Up and down direction) becomes uniform, whereby the substrate can be heated at a uniform temperature. As described above, the substrate 1 7 heated to a uniform surface temperature by the substrate heating device 3 at a specific temperature is carried into the loading chamber 6 in FIG. 1, and the temperature is maintained by the heat spreader 4. Then, the substrate 1 7 It is carried into the film formation chamber 11 to form a silicon film, but at this time, the substrate 17 is maintained at the above-mentioned specific temperature by the temperature adjustment device 10 provided in the film formation chamber 11. Therefore, the substrate 17 is formed with a silicon film while maintaining a uniform surface temperature. Therefore, a good-quality silicon film is formed on the substrate 17. Therefore, according to the above-mentioned vacuum film forming apparatus, high-quality solar cell materials can be produced with high energy efficiency. In addition, the present invention is not limited to the above embodiments, and can also be applied to vacuum film forming apparatuses that require heating substrates, such as sputtering apparatuses, vapor deposition apparatuses, and ionization evaporation apparatuses other than plasma CVD apparatuses, and various plate nozzles can be changed As for the shape, 'the heater body introduction device can employ a configuration other than the above-mentioned embodiment', various changes can be made without departing from the scope of the present invention. [Possibility of industrial use] The substrate can be heated with high energy efficiency in a short period of time when the substrate is subjected to a vacuum film-forming treatment. Furthermore, it is possible to obtain uniformity during heating and after heating is completed. The surface temperature can be heated at the same time-21-(18) (18) 200532933, which can produce high-quality solar cell materials and other products with high energy efficiency. [Brief Description of the Drawings] Fig. 1 is a schematic plan view showing the overall configuration of the vacuum film forming apparatus of the present invention. Fig. 2 is a cut-away front view showing an example of a substrate heating apparatus of a vacuum film forming apparatus of the present invention. Figure 3 is a front view of the trolley. Figure 4 is an oblique view of a part of the trolley and the track. Fig. 5 is an enlarged sectional view showing a part of the plate nozzle of Fig. 2; Fig. 6 is a perspective view illustrating a gas ejection hole formed in a panel of a plate nozzle. Fig. 7 is a partial cross-sectional view of another embodiment in which a substrate is heated by a plate nozzle. Fig. 8 is a partial cross-sectional view of still another embodiment for heating a substrate by a plate nozzle. Fig. 9 is a cut-away plan view of the case where the gas inlets of the plate nozzles arranged so as to hold the substrate are formed at opposite end portions. Fig. 10 is a graph showing the relationship between the elapse of time when the substrate is heated by the impinging jet of the present invention and the time when the substrate is heated by the conventional laminar flow, and the change in the temperature of the substrate. -22- (19) (19) 200532933 Table for comparison of main components 1 Substrate installation section 2 External air inlet 3 Substrate heating device 4 Heat equalizer 5, 8, 1 2 Decompression device 6 Loading interlock chamber 7 Induction combination type Electrode 9 Raw material gas supply device 1 Temperature control device 1 Film formation chamber 1 3 Non-loading interlocking chamber 1 4 Substrate take-out section 15a '15b, 15c, 15d, 15e Gate valve 16 Trolley 17 Substrate 18a' 18b Track 19 wheels 2 〇 Supporting table 2 1 Pillar 22 Supporting device 2 3 Heating chamber 24 Guide rail 2 5 Pair of gears 23- 200532933 (20) 26 Shaft 27 > 38 Drive unit 2 8 Upper partition 2 2 Lower partition 30 30 Opening 3 1 Gas circulation flow path 32 Heating gas introduction device 3 3 Plate nozzle 3 3 a Panel 34 Gas inlet 35 Gas outlet 36 Gas passage 3 7 Partition wall 3 9 Circulating fan 40 Gas heater 4 1 Heat transfer tube 4 2 Control valve 4 3 High temperature filter 44 Temperature detector 4 5 Temperature regulator -24-