CN206479869U - Low voltage bandgap reference, chip, portable power source and drive recorder - Google Patents
Low voltage bandgap reference, chip, portable power source and drive recorder Download PDFInfo
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- CN206479869U CN206479869U CN201720189748.XU CN201720189748U CN206479869U CN 206479869 U CN206479869 U CN 206479869U CN 201720189748 U CN201720189748 U CN 201720189748U CN 206479869 U CN206479869 U CN 206479869U
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Abstract
The utility model is related to technical field of integrated circuits, more particularly to a kind of Low voltage bandgap reference, chip, portable power source and drive recorder.The Low voltage bandgap reference includes：Reference source circuit for producing bias voltage, reference source circuit includes first node and Section Point；Source circuit provides a reference source mirror image circuit of bias current on the basis of, and its first node, Section Point respectively with reference source circuit is connected；Positive temperature coefficient current circuit for producing positive temperature coefficient electric current according to bias voltage, it is connected with Section Point.The positive temperature coefficient current circuit independent by increasing, it simply image copying can go out positive temperature coefficient electric current to be supplied to peripheral circuit, and when peripheral circuit does not need positive temperature coefficient electric current and closes positive temperature coefficient current circuit, reference source circuit and the circuit function of a reference source mirror image circuit now are not affected by interference.
Description
Technical field
The utility model is related to technical field of integrated circuits, more particularly to Low voltage bandgap reference, chip, movement
Power supply and drive recorder.
Background technology
With the development of semiconductor technology and portable type electronic product, to low-power consumption, the benchmark electricity of high power supply voltage scope
The demand of potential source is greatly increased, and also causes the design requirement of band-gap reference to improve a lot.Band-gap reference circuit can be produced
Reference voltage or reference voltage unrelated with power supply and technique, with temperature characteristic.The stability pair of band-gap reference circuit
The generation of the internal electric source of whole system, the adjustment of output voltage etc. all has direct and vital influence.
In many products applications, chip internal needs to produce positive temperature coefficient electric current, inside monitoring SOC
Temperature characterisitic to realize overheat protector function, be common in the application of power management chip.
Inventor has found that existing correlation technique at least has problems with during the present invention is realized：Existing band gap
The positive temperature coefficient electric current of reference circuit can not be used for peripheral circuit by simple image copying, and work as peripheral circuit
Positive temperature coefficient electric current is not needed, and when closing in band-gap reference circuit the circuit module for producing positive temperature coefficient electric current, band gap
Other circuit functions of reference circuit are easily interfered.
Utility model content
One purpose of the utility model embodiment aims to provide a kind of Low voltage bandgap reference, chip, mobile electricity
Source and drive recorder, it solves existing band-gap reference circuit and has not been able to image copying positive temperature coefficient electric current and anti-interference energy
The technical problem of power difference.
In order to solve the above technical problems, the utility model embodiment provides following technical scheme：
In a first aspect, the utility model embodiment provides a kind of Low voltage bandgap reference, the low-voltage bandgap
Reference circuit includes：Reference source circuit for exporting bias voltage, the reference source circuit includes first node and second section
Point；A reference source mirror image circuit for providing bias current for the reference source circuit, its respectively with the reference source circuit
First node, Section Point connection；Positive temperature coefficient electric current for producing positive temperature coefficient electric current according to the bias voltage
Circuit, it is connected with the Section Point.
Optionally, the Low voltage bandgap reference also includes：Zero-temperature coefficient system for exporting zero-temperature coefficient electrical current
Number current circuit, it is connected with a reference source mirror image circuit；For providing clamper electricity for the zero-temperature coefficient electrical current circuit
The clamp circuit of pressure, it is connected with a reference source mirror image circuit and the zero-temperature coefficient electrical current circuit respectively.
Optionally, the reference source circuit includes：First PNP triode, the second PNP triode, first resistor, the second electricity
Resistance and 3rd resistor, the emitter stage of first PNP triode are connected with one end of the first resistor, the first resistor
The other end be the first node, the base stage and grounded collector of first PNP triode, one end of the second resistance with
The first node connection, the other end ground connection of the second resistance, the transmitting extremely described second of second PNP triode
Node, the base stage and grounded collector of second PNP triode, one end of the 3rd resistor connects with the Section Point
Connect, the other end ground connection of the 3rd resistor.
Optionally, a reference source mirror image circuit includes：4th resistance, the first PMOS, the second PMOS, the 3rd PMOS
Pipe, the first NMOS tube and the second NMOS tube, the source electrode of first PMOS source electrode respectively with second PMOS and institute
State the source electrode connection of the 3rd PMOS, the grid of first PMOS respectively with the draining of first PMOS, described the
The draining of one NMOS tube, the grid connection of the grid of second PMOS, the 3rd PMOS, second PMOS
Grid, the grid of second NMOS tube and the drain electrode of drain electrode respectively with first NMOS tube are connected, second NMOS tube
Source electrode be connected to the Section Point, the source electrode of first NMOS tube is connected to the first node, the 3rd PMOS
The drain electrode of pipe passes through the 4th resistance eutral grounding.
Optionally, the positive temperature coefficient current circuit includes：First transport and placing device, the 4th PMOS, the 5th PMOS,
Five resistance and the 3rd PNP triode, the in-phase input end of first transport and placing device are connected to the Section Point, first fortune
The inverting input for putting device is connected with the drain electrode of the 4th PMOS and one end of the 5th resistance respectively, first fortune
The output end for putting device is connected with the grid of the 4th PMOS and the grid of the 5th PMOS respectively, the 4th PMOS
The source electrode of pipe and the connection of the source electrode of the 5th PMOS, the drain electrode of the 5th PMOS are used to export positive temperature coefficient electricity
Stream, the other end of the 5th resistance and the emitter stage connection of the 3rd PNP triode, the base of the 3rd PNP triode
Pole and grounded collector.
Optionally, the zero-temperature coefficient electrical current circuit includes：6th PMOS, the 7th PMOS, the 8th PMOS and
9th PMOS；The clamp circuit includes：Tenth PMOS, the 11st PMOS, the 12nd PMOS, the 13rd PMOS
And the 14th PMOS；The drain electrode of 6th PMOS is connected with the source electrode of first PMOS, the 6th PMOS
Source electrode be connected respectively with the source electrode of the 7th PMOS and the source electrode of the 8th PMOS, the grid of the 6th PMOS
Pole respectively with the grid of the 7th PMOS and drain electrode, the grid of the 8th PMOS, the 9th PMOS source electrode
Connection, the drain electrode of the 8th PMOS is used to export zero-temperature coefficient electrical current, the grounded drain of the 9th PMOS；It is described
The grid of tenth PMOS is connected with the grid of the 3rd PMOS, source electrode and the first PMOS of the tenth PMOS
The source electrode connection of pipe, the source electrode and grid, the 14th that drain respectively with the 13rd PMOS of the tenth PMOS
The grid connection of the grid of PMOS, the 9th PMOS, drain electrode and the 14th PMOS of the 13rd PMOS
The grounded drain of pipe, the grid of the 11st PMOS is connected with the drain electrode of second NMOS tube, the 11st PMOS
The source electrode of pipe is connected with the source electrode of first PMOS, the drain electrode of the 11st PMOS respectively with the 14th PMOS
The grid connection of the source electrode of pipe, the 12nd PMOS, source electrode and first PMOS of the 12nd PMOS
Source electrode is connected, the grounded drain of the 12nd PMOS.
In second aspect, the utility model embodiment provides a kind of chip, and the chip includes described low-voltage bandgap
Reference circuit.
In the third aspect, the utility model embodiment provides a kind of portable power source, and the portable power source includes described low
Voltage bandgap reference circuit.
In fourth aspect, the utility model embodiment provides a kind of drive recorder, and the drive recorder includes described
Low voltage bandgap reference.
At the 5th aspect, the utility model embodiment provides a kind of electronic equipment, and the electronic equipment includes described low
Voltage bandgap reference circuit.
In the utility model each embodiment, the operating point of reference source circuit is adjusted by a reference source mirror image circuit, is made
Reference source circuit produces bias voltage, and by increasing independent positive temperature coefficient current circuit, it can be according to the biasing
Voltage output positive temperature coefficient electric current, therefore, is compared, Low voltage bandgap reference compares in itself with existing correlation technique
The reference current not varied with temperature easily is produced, under the circuit structure, positive temperature coefficient current circuit can be simply
Positive temperature coefficient electric current is copied to be supplied to peripheral circuit, and close when peripheral circuit does not need positive temperature coefficient electric current
During positive temperature coefficient current circuit, reference source circuit and the circuit function of a reference source mirror image circuit now are not affected by interference.
Brief description of the drawings
Fig. 1 is that the utility model embodiment provides a kind of circuit block diagram of Low voltage bandgap reference；
Fig. 2 is that another embodiment of the utility model provides a kind of circuit of Low voltage bandgap reference
Block diagram；
Fig. 3 is that the utility model still another embodiment provides a kind of knot of Low voltage bandgap reference
Structure connection diagram.
Embodiment
For the ease of understanding the utility model, with reference to the accompanying drawings and detailed description, the utility model is carried out more
Detailed description.It should be noted that when element is expressed " being fixed on " another element, it can be directly in another element
There may be above or therebetween one or more elements placed in the middle.When an element is expressed " connection " another element, it can
To be directly to another element or there may be one or more elements placed in the middle therebetween.This specification is used
Term " vertical ", " level ", "left", "right" and similar statement for illustrative purposes only.
Unless otherwise defined, technology all used in this specification and scientific terminology are with belonging to skill of the present utility model
The implication that the technical staff in art field is generally understood that is identical.In art used in the description of the present utility model in this specification
Language is intended merely to describe the purpose of specific embodiment, is not intended to limit the utility model.Art used in this specification
Language "and/or" includes the arbitrary and all combination of one or more related Listed Items.
Fig. 1 is that the utility model embodiment provides a kind of circuit block diagram of Low voltage bandgap reference.As shown in figure 1,
The Low voltage bandgap reference 100 includes reference source circuit 11, a reference source mirror image circuit 12 and positive temperature coefficient current circuit
13, reference source circuit 11 includes first node 11A and Section Point 11B, a reference source mirror image circuit 12 respectively with reference source circuit
11 first node 11A, Section Point 11B connections, positive temperature coefficient current circuit 13 are connected with Section Point 11B.
A reference source mirror image circuit 12 receives external power source, and provides bias current, a reference source electricity to reference source circuit 11
Road 11 produces bias voltage according to the bias current, and positive temperature coefficient current circuit produces positive temperature coefficient according to the bias voltage
Electric current.
It is compared with existing correlation technique, Low voltage bandgap reference is eaily produced in itself not to be become with temperature
The reference current of change, under the circuit structure, the positive temperature coefficient current circuit 13 independent by increasing, it can be inclined according to this
Voltage output positive temperature coefficient electric current is put, therefore, positive temperature coefficient current circuit 13 can simply copy out positive temperature coefficient
Electric current closes positive temperature coefficient electric current electricity to be supplied to peripheral circuit when peripheral circuit does not need positive temperature coefficient electric current
During road 13, reference source circuit 11 and the circuit function of a reference source mirror image circuit 12 now are not affected by interference.
In certain embodiments, as shown in Fig. 2 the Low voltage bandgap reference 100 also includes zero-temperature coefficient electrical current
Circuit 14 and clamp circuit 15, zero-temperature coefficient electrical current circuit 14 are connected with a reference source mirror image circuit 12, and clamp circuit 15 is distinguished
It is connected with a reference source mirror image circuit 12 and zero-temperature coefficient electrical current circuit 14.
Zero-temperature coefficient electrical current circuit 14 image copying and can export zero-temperature coefficient system from a reference source mirror image circuit 12
Number electric current, clamp circuit 15 can provide clamp voltage for zero-temperature coefficient electrical current circuit 14, to improve PSRR.
It is compared with existing correlation technique, the Low voltage bandgap reference 100 can not only be simply copied out just
Temperature coefficient current, additionally it is possible to export zero-temperature coefficient electrical current, and PSRR is high.
In certain embodiments, as shown in figure 3, the reference source circuit 11 includes：First PNP triode T1, the 2nd PNP tri-
Pole pipe T2, first resistor R1, second resistance R2 and 3rd resistor R3, the first PNP triode T1 emitter stage and first resistor R1
One end connection, the first resistor R1 other end is first node 11A, the first PNP triode T1 base stage and grounded collector,
Second resistance R2 one end is connected with first node 11A, second resistance R2 other end ground connection, the second PNP triode T2 hair
Emitter-base bandgap grading is Section Point 11B, the second PNP triode T2 base stage and grounded collector, 3rd resistor R3 one end and second section
Point 11B connections, 3rd resistor R3 other end ground connection.
Further, a reference source mirror image circuit 12 includes：4th resistance R4, the first PMOS PQ1, the second PMOS PQ2,
3rd PMOS PQ3, the first NMOS tube NQ1 and the second NMOS tube NQ2, the first PMOS PQ1 source electrode respectively with the 2nd PMOS
Pipe PQ2 source electrode and the 3rd PMOS PQ3 source electrode connection, the first PMOS PQ1 grid is respectively with the first PMOS PQ's
Drain electrode, the first NMOS tube NQ1 drain electrode, the second PMOS PQ2 grid, the 3rd PMOS PQ3 grid connection, the 2nd PMOS
Grid, the second NMOS tube NQ2 grid and the drain electrode of pipe PQ2 drain electrode respectively with the first NMOS tube NQ1 are connected, the second NMOS tube
The source electrode that NQ2 source electrode is connected to Section Point 11B, the first NMOS tube NQ1 is connected to first node 11A, the 3rd PMOS PQ3
Drain electrode be grounded by the 4th resistance R4.
Further, positive temperature coefficient current circuit 13 includes：First transport and placing device UP1, the 4th PMOS PQ4, the 5th
PMOS PQ5, the 5th resistance R5 and the 3rd PNP triode T3, the first transport and placing device UP1 in-phase input end are connected to Section Point
11B, the first transport and placing device UP1 inverting input are connected with the 4th PMOS PQ4 drain electrode and the 5th resistance R5 one end respectively,
First transport and placing device UP1 output end is connected with the 4th PMOS PQ4 grid and the 5th PMOS PQ5 grid respectively, and the 4th
PMOS PQ4 source electrode and the 5th PMOS PQ5 source electrode connection, the 5th PMOS PQ5 drain electrode are used to export positive temperature system
Number electric current, the emitter stage connection of the 5th resistance the R5 other end and the 3rd PNP triode T3, the 3rd PNP triode T3 base stage
And grounded collector.
Further, zero-temperature coefficient electrical current circuit 14 includes：6th PMOS PQ6, the 7th PMOS PQ7, the 8th
PMOS PQ8 and the 9th PMOS PQ9.
Clamp circuit 15 includes：Tenth PMOS PQ10, the 11st PMOS PQ11, the 12nd PMOS PQ12, the tenth
Three PMOS PQ13 and the 14th PMOS PQ14；6th PMOS PQ6 drain electrode is connected with the first PMOS PQ1 source electrode,
6th PMOS PQ6 source electrode is connected with the 7th PMOS PQ7 source electrode and the 8th PMOS PQ8 source electrode respectively, and the 6th
PMOS PQ6 grid respectively with the 7th PMOS PQ7 grid and drain electrode, the 8th PMOS PQ8 grid, the 9th PMOS
PQ9 source electrode connection, the 8th PMOS PQ8 drain electrode is used to export zero-temperature coefficient electrical current, and the 9th PMOS PQ9 drain electrode connects
Ground；Tenth PMOS PQ10 grid is connected with the 3rd PMOS PQ3 grid, the tenth PMOS PQ10 source electrode and first
PMOS PQ1 source electrode connection, the tenth PMOS PQ10 drain electrode source electrode and grid respectively with the 13rd PMOS PQ13, the
The grid connection of 14 PMOS PQ14 grid, the 9th PMOS PQ9, the 13rd PMOS PQ13 drain electrode and the 14th
PMOS PQ14 grounded drain, the 11st PMOS PQ11 grid is connected with the second NMOS tube NQ2 drain electrode, and the 11st
PMOS PQ11 source electrode is connected with the first PMOS PQ1 source electrode, and the 11st PMOS PQ11 drain electrode is respectively with the 14th
The grid connection of PMOS PQ14 source electrode, the 12nd PMOS PQ12, the 12nd PMOS PQ12 source electrode and the first PMOS
Pipe PQ1 source electrode connection, the 12nd PMOS PQ12 grounded drain.
As shown in figure 3, the operation principle of reference source circuit 11 is according to the temperature independent spy of the band gap voltage of silicon materials
Property, it is mutual using the thermal voltage with positive temperature coefficient and the voltage of transistor base-transmitting interpolar with negative temperature coefficient
Superposition, to realize Low Drift Temperature, high-precision bias voltage.Specifically, utilizing the effect of amplifier Feedback clamp so that first node
11A is equal with Section Point 11B input terminal voltage, so as to obtain the first PNP triode T1 and the second PNP triode T2 base
The voltage difference of pole-transmitting interpolar, according to the electrology characteristic of silicon semiconductor section, the voltage difference has positive temperature coefficient, single three pole
It is negative temperature coefficient to manage (the first PNP triode T1 or the second PNP triode T2) base emitter voltage.Utilize first resistor
R1 and the second second resistance R2 ratio adjustment, just can obtain a zero-temperature coefficient electrical current compensated.Is flowed through in figure
One resistance R1 electric current is positive temperature coefficient electric current, and the electric current for flowing through the second PNP triode T2 is negative temperature parameter current.So
And, such a positive temperature coefficient electric current is not easy to be replicated by simple mirror image, and when closing the positive temperature coefficient electric current, a reference source electricity
Other functions on road 11 are interfered.
Referring again to Fig. 3, when input power accesses a reference source mirror image circuit 12, a reference source mirror image circuit 12 passes through first
Cooperation between PMOS PQ1, the second PMOS PQ2, the 3rd PMOS PQ3, the first NMOS tube NQ1 and the second NMOS tube NQ2,
On the basis of source circuit 11 provide bias current.
Please continue to refer to Fig. 3, in positive temperature coefficient current circuit 13, pass through the first transport and placing device UP1 feedback and clamper
Effect so that the 5th resistance R5 both end voltage is equal with the voltage at Section Point 11B, so as to realize the two of the 5th resistance R5
Terminal voltageWherein, n is the second PNP triode T2 intrinsic carrier concentration, VT=KT/q；K is glass
The graceful constant of Wurz, T is thermodynamic temperature, and q is electronic charge.Therefore, positive temperature coefficient electric current Iptat-ref=Δ VBE/R3。
As the another aspect of the utility model embodiment, the utility model embodiment provides a kind of chip, the chip bag
Include the Low voltage bandgap reference as described in Fig. 1 to Fig. 3.
As the another aspect of the utility model embodiment, the utility model embodiment provides a kind of portable power source, should
Portable power source includes the Low voltage bandgap reference as described in Fig. 1 to Fig. 3.
As the another aspect of the utility model embodiment, the utility model embodiment provides a kind of drive recorder,
The drive recorder includes the Low voltage bandgap reference as described in Fig. 1 to Fig. 3.
As the another aspect of the utility model embodiment, the utility model embodiment provides a kind of electronic equipment, should
Electronic equipment includes the Low voltage bandgap reference as described in Fig. 1 to Fig. 3.
It is compared with existing correlation technique, Low voltage bandgap reference is eaily produced in itself not to be become with temperature
The reference current of change, under the circuit structure, the positive temperature coefficient current circuit independent by increasing, it can be according to the biasing
Voltage output positive temperature coefficient electric current, therefore, positive temperature coefficient current circuit can simply copy out positive temperature coefficient electric current
To be supplied to peripheral circuit, and positive temperature coefficient current circuit is closed when peripheral circuit does not need positive temperature coefficient electric current
When, reference source circuit and the circuit function of a reference source mirror image circuit now are not affected by interference.
Of the present utility model preferably implement it should be noted that being given in specification of the present utility model and its accompanying drawing
Mode, still, the utility model can be realized by many different forms, however it is not limited to the implementation described by this specification
Mode, these embodiments are to make there is provided the purpose of these embodiments not as the extra limitation to the utility model content
Understanding to disclosure of the present utility model is more thorough comprehensive.Also, above-mentioned each technical characteristic continues to be mutually combined, formed
The various embodiments not being enumerated above, are accordingly to be regarded as the scope of the utility model specification record；Further, to this area
For those of ordinary skill, it can according to the above description be improved or be converted, and all these modifications and variations should all belong to
The protection domain of the utility model appended claims.
Claims (10)
1. a kind of Low voltage bandgap reference, it is characterised in that including：
Reference source circuit for producing bias voltage, the reference source circuit includes first node and Section Point；
A reference source mirror image circuit for providing bias current for the reference source circuit, its respectively with the reference source circuit
First node, Section Point connection；
Positive temperature coefficient current circuit for producing positive temperature coefficient electric current according to the bias voltage, itself and the second section
Point connection.
2. Low voltage bandgap reference according to claim 1, it is characterised in that the Low voltage bandgap reference
Also include：
Zero-temperature coefficient electrical current circuit for exporting zero-temperature coefficient electrical current, it is connected with a reference source mirror image circuit；
Clamp circuit for providing clamp voltage for the zero-temperature coefficient electrical current circuit, its respectively with a reference source mirror image
Circuit and zero-temperature coefficient electrical current circuit connection.
3. Low voltage bandgap reference according to claim 2, it is characterised in that the reference source circuit includes：The
One PNP triode, the second PNP triode, first resistor, second resistance and 3rd resistor, the transmitting of first PNP triode
Pole is connected with one end of the first resistor, and the other end of the first resistor is the first node, the poles of the first PNP tri-
The base stage and grounded collector of pipe, one end of the second resistance are connected with the first node, the second resistance it is another
End ground connection, the extremely described Section Point of transmitting of second PNP triode, the base stage and current collection of second PNP triode
Pole is grounded, and one end of the 3rd resistor is connected with the Section Point, the other end ground connection of the 3rd resistor.
4. Low voltage bandgap reference according to claim 3, it is characterised in that a reference source mirror image circuit bag
Include：4th resistance, the first PMOS, the second PMOS, the 3rd PMOS, the first NMOS tube and the second NMOS tube, described first
The source electrode of PMOS is connected with the source electrode of second PMOS and the source electrode of the 3rd PMOS respectively, the first PMOS
The grid of pipe respectively with the draining of first PMOS, the draining of first NMOS tube, the grid of second PMOS,
The grid connection of 3rd PMOS, it is the drain electrode grid respectively with first NMOS tube of second PMOS, described
The grid of second NMOS tube and drain electrode are connected, and the source electrode of second NMOS tube is connected to the Section Point, described first
The source electrode of NMOS tube is connected to the first node, and the drain electrode of the 3rd PMOS passes through the 4th resistance eutral grounding.
5. Low voltage bandgap reference according to claim 4, it is characterised in that the positive temperature coefficient current circuit
Including：First transport and placing device, the 4th PMOS, the 5th PMOS, the 5th resistance and the 3rd PNP triode, first transport and placing device
In-phase input end be connected to the Section Point, the inverting input of first transport and placing device respectively with the 4th PMOS
Drain electrode and one end of the 5th resistance connect, the grid of the output end of first transport and placing device respectively with the 4th PMOS
The grid connection of pole and the 5th PMOS, the source electrode of the 4th PMOS and the source electrode connection of the 5th PMOS,
The drain electrode of 5th PMOS is used to export positive temperature coefficient electric current, the other end and the 3rd PNP of the 5th resistance
The emitter stage connection of triode, the base stage and grounded collector of the 3rd PNP triode.
6. Low voltage bandgap reference according to claim 4, it is characterised in that
The zero-temperature coefficient electrical current circuit includes：6th PMOS, the 7th PMOS, the 8th PMOS and the 9th PMOS；
The clamp circuit includes：Tenth PMOS, the 11st PMOS, the 12nd PMOS, the 13rd PMOS and the tenth
Four PMOSs；
The drain electrode of 6th PMOS is connected with the source electrode of first PMOS, the source electrode of the 6th PMOS respectively with
The source electrode of 7th PMOS and the connection of the source electrode of the 8th PMOS, the grid of the 6th PMOS respectively with it is described
The grid of 7th PMOS and drain electrode, the grid of the 8th PMOS, the source electrode connection of the 9th PMOS, the described 8th
The drain electrode of PMOS is used to export zero-temperature coefficient electrical current, the grounded drain of the 9th PMOS；
The grid of tenth PMOS is connected with the grid of the 3rd PMOS, the source electrode of the tenth PMOS with it is described
The source electrode connection of first PMOS, the source electrode and grid that drain respectively with the 13rd PMOS of the tenth PMOS,
The grid connection of the grid of 14th PMOS, the 9th PMOS, the drain electrode and the described tenth of the 13rd PMOS
The grounded drain of four PMOSs, the grid of the 11st PMOS is connected with the drain electrode of second NMOS tube, and the described tenth
The source electrode of one PMOS is connected with the source electrode of first PMOS, and the drain electrode of the 11st PMOS is respectively with the described tenth
The grid connection of the source electrode of four PMOSs, the 12nd PMOS, the source electrode and described first of the 12nd PMOS
The source electrode connection of PMOS, the grounded drain of the 12nd PMOS.
7. a kind of chip, it is characterised in that including the Low voltage bandgap reference as described in any one of claim 1 to 6.
8. a kind of portable power source, it is characterised in that including the low-voltage bandgap benchmark electricity as described in any one of claim 1 to 6
Road.
9. a kind of drive recorder, it is characterised in that including the low-voltage bandgap benchmark as described in any one of claim 1 to 6
Circuit.
10. a kind of electronic equipment, it is characterised in that including the low-voltage bandgap benchmark electricity as described in any one of claim 1 to 6
Road.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720189748.XU CN206479869U (en) | 2017-02-28 | 2017-02-28 | Low voltage bandgap reference, chip, portable power source and drive recorder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720189748.XU CN206479869U (en) | 2017-02-28 | 2017-02-28 | Low voltage bandgap reference, chip, portable power source and drive recorder |
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| CN206479869U true CN206479869U (en) | 2017-09-08 |
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| CN201720189748.XU Active CN206479869U (en) | 2017-02-28 | 2017-02-28 | Low voltage bandgap reference, chip, portable power source and drive recorder |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107589775A (en) * | 2017-10-24 | 2018-01-16 | 南京微盟电子有限公司 | A kind of reference voltage source of positive temperature coefficient current compensation |
| CN110543201A (en) * | 2018-05-28 | 2019-12-06 | 深圳指芯智能科技有限公司 | Current source control circuit and current source |
| CN113485504A (en) * | 2021-07-05 | 2021-10-08 | 珠海亿智电子科技有限公司 | Voltage reference circuit and circuit board with same |
| CN114080580A (en) * | 2020-10-27 | 2022-02-22 | 深圳市汇顶科技股份有限公司 | Bandgap reference circuit and integrated circuit |
-
2017
- 2017-02-28 CN CN201720189748.XU patent/CN206479869U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107589775A (en) * | 2017-10-24 | 2018-01-16 | 南京微盟电子有限公司 | A kind of reference voltage source of positive temperature coefficient current compensation |
| CN107589775B (en) * | 2017-10-24 | 2018-11-23 | 南京微盟电子有限公司 | A kind of reference voltage source of positive temperature coefficient current compensation |
| CN110543201A (en) * | 2018-05-28 | 2019-12-06 | 深圳指芯智能科技有限公司 | Current source control circuit and current source |
| CN114080580A (en) * | 2020-10-27 | 2022-02-22 | 深圳市汇顶科技股份有限公司 | Bandgap reference circuit and integrated circuit |
| WO2022087812A1 (en) * | 2020-10-27 | 2022-05-05 | 深圳市汇顶科技股份有限公司 | Bandgap voltage reference circuit and integrated circuit |
| CN114080580B (en) * | 2020-10-27 | 2023-09-12 | 深圳市汇顶科技股份有限公司 | Bandgap reference circuit and integrated circuit |
| CN113485504A (en) * | 2021-07-05 | 2021-10-08 | 珠海亿智电子科技有限公司 | Voltage reference circuit and circuit board with same |
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