CN206266221U - Stack MEMS sensor packaging body and chip - Google Patents
Stack MEMS sensor packaging body and chip Download PDFInfo
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- CN206266221U CN206266221U CN201621291773.0U CN201621291773U CN206266221U CN 206266221 U CN206266221 U CN 206266221U CN 201621291773 U CN201621291773 U CN 201621291773U CN 206266221 U CN206266221 U CN 206266221U
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Abstract
A kind of stack MEMS sensor packaging body and chip, including cover plate, for encapsulating；One or more pieces collection wafers, are formed with Acquisition Circuit and MEMS structure thereon；One or more pieces treatment wafers, are formed with process circuit thereon；Described one or more pieces treatment wafers, one or more pieces collection wafers and cover plate are to be bonded to form from bottom to top using wafer scale bonding technology, and electrically interconnection is realized by conductive bridge pier between all wafers.The utility model is by Acquisition Circuit and process circuit hierarchical design, it is bonded and is encapsulated using wafer scale bonding technology, form vertical multiple-level stack formula structure, chip area can be significantly reduced, realize the completely isolated of Acquisition Circuit and process circuit, reduce the interference between analog circuit and digital circuit and circuit noise, improve sensor performance index, Acquisition Circuit and process circuit can respectively select suitable manufacturing process, reduce process costs, it is adaptable to high-performance, small size, the terminal device of low cost.
Description
Technical field
The utility model is related to sensor technical field, more particularly to a kind of stack MEMS sensor packaging body, chip
And preparation method thereof.
Background technology
Sensor（sensor）Be it is a kind of can experience measured information, and be transformed to according to certain rules electric signal or its
The device or device of form output needed for him.In miscellaneous sensor, based on microelectronics and micromachining technology system
One of great sciemtifec and technical sphere that the MEMS sensor created is attracted attention as the world.Compared with traditional sensors, it has volume
Small, low cost, it is low in energy consumption, be easily integrated and realize intelligentized feature.The characteristic size of micron dimension causes that it can be with simultaneously
Complete the irrealizable function of some tradition machinery sensors institute.
Main MEMS structure, the Acquisition Circuit included for gathering signal in MEMS sensor inside（Analog circuit）And use
In the process circuit for the treatment of collection signal（Digital circuit）.In the prior art, the manufacturing process of MEMS sensor be typically by
Acquisition Circuit and process circuit are all integrated on electronic component wafer 300, and the directly growth on electronic component wafer 300
MEMS structure 200, carries out bonding packaging, as shown in Figure 1 finally by cover plate 100.Prior art has problems in that：1）Adopt
Collector mixes on same wafer with process circuit, numeral, can produce between analog circuit and to interfere and noise is larger, it is difficult to control
System, causes sensor performance low；2）Acquisition Circuit mixes with process circuit can make the chi of electronic component wafer on same wafer
It is very little excessive, cause chip area excessive, it is unfavorable for using in the scene to small sizes such as hand-held, wearings；3）Acquisition Circuit（Simulation
Circuit）Micron-sized integrated circuit production technology, and process circuit can be used（Digital circuit）Then need higher using cost
Acquisition Circuit and process circuit are integrated in electronic component wafer by nano level integrated circuit production technology, prior art jointly
On 200, in order to by with regard to the manufacturing process of digital circuit, whole electronic component wafer is required for being given birth to using cost nanoscale higher
Production. art, ultimately results in MEMS sensor cost and remains high.In a word, existing technical scheme seriously constrains MEMS sensor
Develop towards further intellectuality, small size, high target, high-performance, inexpensive direction.
Utility model content
In order to solve the above problems, the purpose of this utility model is to provide a kind of stack MEMS sensor packaging body.
The technical solution adopted in the utility model is：A kind of stack MEMS sensor packaging body, including：
Cover plate, for encapsulating；
One or more pieces collection wafers, are formed with Acquisition Circuit and MEMS structure thereon, and the Acquisition Circuit coordinates MEMS
Structure realizes that sensor gathers the function of signal；
One or more pieces treatment wafers, are formed with process circuit thereon, for controlling Acquisition Circuit and MEMS structure to gather
The signal and signal that will be collected is processed and exported；
Described one or more pieces treatment wafers, one or more pieces collection wafers and cover plate are using wafer scale bonding technology
Bonding is formed from bottom to top, wherein, form MEMS structure between cover plate and collection wafer or collection wafer and collection wafer
Encapsulation cavity, electrically interconnection is realized between all wafers by conductive bridge pier.
Preferably, the cover plate lower surface has the getter material layer for realizing vacuum environment in package cavity body.
Preferably, the Acquisition Circuit is made of using 0.13 μm ~ 0.5 μm integrated circuit technology；The process circuit is
It is made of the integrated circuit technology of 14nm ~ 180nm.
Preferably, the conductive bridge pier is metal bridge pier.
Preferably, the Acquisition Circuit is front-end processing circuit AFE；The treatment includes conversion, data operation and analysis；
The process circuit includes thering is control, calculating, the central processor CPU or microprocessor MPU of analytic function；Coordinate CPU or
MPU carries out the digital signal processing circuit DSP of Digital Signal Processing；Receive the control of CPU or MPU signals and transmitted to Acquisition Circuit
The Digital Analog Hybrid Circuits AD and interface circuit of control signal.
Another purpose of the present utility model is to provide a kind of stack MEMS sensor chip, the technical scheme of use
For：The stack MEMS sensor chip carries out section and is formed by above-mentioned stack MEMS sensor packaging body.
Compared with prior art, there is following technique effect in the utility model：
Acquisition Circuit and process circuit hierarchical design are bonded and are sealed by the utility model using wafer scale bonding technology
Dress, forms vertical multiple-level stack formula structure,
1）Due to a layer crystal circle thickness less than 1mm, therefore thickness substantially it is increased in the case of, can significantly reduce
Wafer area, reduces chip size, is suitably applied in the small devices such as mobile phone, wearing and handheld device；
2）While electrically interconnection between wafer is ensured, completely isolated, the drop of Acquisition Circuit and process circuit is capable of achieving
Interference and circuit noise between low analog circuit and digital circuit, improve sensor performance index；
3）By analog circuit and digital circuit hierarchical design, Acquisition Circuit and process circuit can respectively select suitable work
Skill processing procedure, reduces sensor process cost；
4）Process circuit is layered with Acquisition Circuit and sets, and not only can provide bigger design space for digital circuit, has
Effect lifting Design of Digital Circuit level and function, setting multilayer collection wafer can also realize multiple sensors function.
Brief description of the drawings
Fig. 1 is prior art construction schematic diagram；
Fig. 2 is the stack MEMS sensor package body structure schematic diagram in the utility model embodiment 1；
Fig. 3 is stack MEMS sensor chip structure schematic diagram in the utility model embodiment 1；
Fig. 4 is the stack MEMS sensor chip manufacture method flow chart of the utility model embodiment 1；
Fig. 5 is the utility model stack MEMS sensor chip logic functional schematic；
Fig. 6 is the stack MEMS sensor package body structure schematic diagram in the utility model embodiment 2；
Fig. 7 is stack MEMS sensor chip structure schematic diagram in the utility model embodiment 2；
Fig. 8 is stack MEMS sensor chip manufacture method flow chart in the utility model embodiment 2；
Fig. 9 is the stack MEMS sensor package body structure schematic diagram in the utility model embodiment 3；
Figure 10 is stack MEMS sensor chip structure schematic diagram in the utility model embodiment 3；
Figure 11 is stack MEMS sensor chip manufacture method flow chart in the utility model embodiment 3.
Specific embodiment
With reference to Fig. 2 to Figure 11, the utility model is described in further detail：
Embodiment 1：Referring to Fig. 2, a kind of stack MEMS sensor packaging body, including：Cover plate 10, for encapsulating；It is a piece of
Collection wafer 20, is formed with Acquisition Circuit and MEMS structure 21 thereon, and the Acquisition Circuit coordinates MEMS structure 21 to realize sensing
Device gathers the function of signal；A piece for the treatment of wafer 30, is formed with process circuit, for controlling Acquisition Circuit and MEMS structure thereon
21 signals that gather signals and will collect are processed and exported；The treatment wafer 30, collection wafer 20 and cover plate 10
It is to be bonded to form from bottom to top using wafer scale bonding technology, wherein, form MEMS structure between cover plate 10 and collection wafer 20
Encapsulation cavity, electrically interconnection is realized by conductive bridge pier 31 between collection wafer 20 and treatment wafer 30.
Further, the lower surface of the cover plate 10 also has getter material layer 11, for realizing vacuum in package cavity body
Environment, it is adaptable to infrared thermal imaging sensor or other need the MEMS sensor of Vacuum Package.
Further, the conductive bridge pier can be metal bridge pier, it is also possible to the material of electricity interconnection can be realized by other
It is made.
Further, the Acquisition Circuit uses 0.13 μm ~ 0.5 μm integrated circuit technology；The process circuit is adopted
It is the integrated circuit technology of 14nm ~ 180nm.
Acquisition Circuit and process circuit hierarchical design are bonded and are sealed by the utility model using wafer scale bonding technology
Dress, forms vertical multiple-level stack formula structure.Because the thickness of layer crystal circle is less than 1mm therefore substantially not increased in thickness
In the case of, the utility model can significantly reduce wafer area, reduce chip size, it is adaptable to mobile phone, wearing and handheld device
Etc. small device；In addition, between wafer is ensured electrically interconnection while, realize Acquisition Circuit and process circuit it is complete every
From, the interference between analog circuit and digital circuit and circuit noise are reduced, improve sensor performance index；Furthermore, will simulate
Circuit and digital circuit hierarchical design, Acquisition Circuit and process circuit can respectively select suitable manufacturing process, reduce sensing
Device process costs；Importantly, process circuit is processed respectively with Acquisition Circuit, bigger design can be provided for digital circuit
Space, effectively lifting Design of Digital Circuit level and function, under identical area, density and the function of digital circuit will be more
Strengthen big.
Further, the Acquisition Circuit is front-end processing circuit AFE, be capable of receiving processing circuit input signal and to
MEMS structure sending action is instructed；The process circuit include have control, calculate, the central processor CPU of analytic function or
Microprocessor MPU；Coordinating CPU or MPU carries out the digital signal processing circuit DSP of Digital Signal Processing；Receive CPU or MPU letters
Number control and to the Digital Analog Hybrid Circuits AD and interface circuit of Acquisition Circuit transmission of control signals, process circuit control can be realized
System, conversion, data operation, analysis and output function.Only base instruction need to be input into sensor internal on this architecture basics,
Such as When, What, CPU or MCU can complete a series of control operational analyses and export result.In new stack knot
By central processor CPU or microprocessor MPU, digital signal processing circuit DSP, Digital Analog Hybrid Circuits AD and interface in structure framework
Circuit is integrated on one or more pieces treatment wafers, is enabled to sensor chip to be not required to external circuitses and is capable of achieving internal control
System, conversion, data operation, analysis and output function, further reduce the end product volume that sensor chip is applied, especially
Suitable for being attached on the end product of high accuracy, low-power consumption, small size.Certainly, above-mentioned is that the utility model is preferably implemented
The corresponding function module can also according to demand be set up or be reduced to mode, process circuit of the present utility model.
It is the utility model stack MEMS sensor chip structure schematic diagram referring to Fig. 3, the stack MEMS sensings
Device chip is that above-mentioned stack MEMS sensor packaging body is cut into slices to be formed.Stack MEMS sensor chip cover plate, collection
The design feature such as wafer and treatment wafer is described above, and will not be repeated here.
Referring to Fig. 4, based on above-mentioned stack MEMS sensor chip, the utility model additionally provides a kind of stack MEMS
The preparation method of sensor chip, including：
Step S1：Preparation is formed with a piece for the treatment of wafer 30 of process circuit and is formed with a piece of collection crystalline substance of Acquisition Circuit
Circle 20, wherein, the Acquisition Circuit is used to gather signal；The process circuit is used to control Acquisition Circuit and the letter that will be collected
Number processed and exported.
Preferably, the Acquisition Circuit is made of using 0.13 μm ~ 0.5 μm integrated circuit technology；The process circuit is
It is made of the integrated circuit technology of 14nm ~ 180nm.
Step S2:Collection wafer 20 is bonded on treatment wafer 30 by wafer scale bonding technology, the collection wafer
Electrically interconnection is realized by conductive bridge pier between 20 and treatment wafer 30.
Preferably, the conductive bridge pier can be metal bridge pier, naturally it is also possible to the material of electricity interconnection can be realized by other
Material is made.
Step S3：MEMS structure 21 is grown on collection wafer 20, the Acquisition Circuit coordinates MEMS structure 21 to complete to pass
Sensor gathers the function of signal.
Step S4：Prepare cover plate 10, cover plate 10 is bonded on collection wafer 20 by wafer bonding technique, the cover plate
The encapsulation cavity of MEMS structure 21 is formed between 10 and collection wafer 20.
Used as preferred scheme, the lower surface of the cover plate 10 has the getter for realizing vacuum environment in package cavity body
Material layer 11, it is adaptable to infrared thermal imaging sensor or other need the MEMS sensor of Vacuum Package.Here, step S4 is：
Prepare cover plate 10, under vacuum conditions activated degasser material layer 11, then cover plate 10 is bonded to by wafer bonding technique adopts
On collection wafer 20, the encapsulation cavity of MEMS structure is formed between the cover plate 10 and collection wafer 20.Now, it is in package cavity body
Vacuum environment.
As another preferred scheme, if the MEMS structure 21 in sensor needs to be operated in inert gas environment
Under, here, step S4 can also be：Prepare cover plate 10, cover plate 10 is passed through into wafer bonding in the environment of inert gas shielding
Technique is bonded on collection wafer 20, and the encapsulation cavity of MEMS structure is formed between the cover plate 10 and collection wafer 20.Now.
It is the environment of inert gas shielding in package cavity body.
Step S5：Independent stack MEMS sensor is formed by packaging body after encapsulation is cut into slices.
Further, the Acquisition Circuit is front-end processing circuit AFE in step sl；The process circuit includes having
Control, calculating, the central processor CPU or microprocessor MPU of analytic function；Coordinating CPU or MPU carries out Digital Signal Processing
Digital signal processing circuit DSP；Receive the control of CPU or MPU signals and to the numerical model analysis electricity of Acquisition Circuit transmission of control signals
Road AD and interface circuit, can realize processing circuit controls, conversion, data operation, analysis and output function.In this structure
On the basis of only need to be input into base instruction to sensor internal, such as When, What, CPU or MCU can complete a series of controls
Operational analysis simultaneously exports result.
It is the logical schematic of the utility model preferred embodiment referring to Fig. 5, stack MEMS sensor chip is complete
One action process is：By interface circuit to CPU or MPU input signals, CPU or MPU start-up operations simultaneously can instruct numeral
Signal processing circuit DSP carries out processing backward Digital Analog Hybrid Circuits AD transmission data signal, Digital Analog Hybrid Circuits to input signal
The data signal that AD will be received is converted into analog signal transmission to front-end processing circuit AFE, from front-end processing circuit AFE to
MEMS structure sending action is instructed, and MEMS structure receives and measured signal is gathered after instructing and MEMS structure is sent back to, MEMS structure
The signal that will be collected is converted into sending back to after electric signal front-end processing circuit AFE, and AFE is tentatively located after receiving to the signal
Reason is sent to Digital Analog Hybrid Circuits, the analog signal that Digital Analog Hybrid Circuits will be collected change to data signal send to
CPU or MPU, CPU or MPU can instruct digital signal processing circuit DSP to beam back CPU after carrying out data processing to the data signal
Or MPU, CPU or MPU export the signal after calculation process is analyzed by interface circuit.
Embodiment 2：Referring to Fig. 6, the present embodiment equally provides a kind of stack MEMS sensor packaging body, other parts with
Embodiment 1 is identical, and difference is：The treatment wafer 30 is 2 wafers, respectively processes wafer 1（30a）With treatment wafer 2
(30b).Preferably, the lower surface of the cover plate 10 also has getter material layer 11, for realizing vacuum environment in package cavity body,
Suitable for infrared thermal imaging sensor or other need the MEMS sensor of Vacuum Package.The conductive bridge pier can be metal bridge
Pier, it is also possible to be made up of other materials that can realize electricity interconnection.The Acquisition Circuit use 0.13 μm ~ 0.5 μm it is integrated
Circuit technology；The process circuit uses the integrated circuit technology of 14nm ~ 180nm.
Same as Example 1, the process circuit on the treatment wafer can include thering is control, calculating, analytic function
Central processor CPU or microprocessor MPU；Coordinating CPU or MPU carries out the digital signal processing circuit of Digital Signal Processing
DSP；Receive the control of CPU or MPU signals and to the Digital Analog Hybrid Circuits AD and interface circuit of Acquisition Circuit transmission of control signals,
Each several part circuit can be arranged on treatment wafer 1 or treatment wafer 2 as desired.Can be formed after above-mentioned packaging body is cut into slices
Independent stack MEMS sensor, as shown in Figure 7.
Referring to Fig. 8, based on above-mentioned stack MEMS sensor chip, its manufacturing process can specifically include：
Step S1：Preparation is formed with the treatment wafer 1 of process circuit（30a）With treatment wafer 2（30b）And be formed with and adopt
The collection wafer 20 of collector, wherein, the process circuit is processed for the signal for controlling Acquisition Circuit and will collect
And export.
Step S2:Wafer 1 will be processed（30a）Treatment wafer 2 is bonded to by wafer scale bonding technology（30b）On, then will
Collection wafer 20 is bonded to treatment wafer 2 by wafer scale bonding technology（30b）On, by conductive bridge pier 31 between three wafers
Realize electrically interconnection.
Step S3：MEMS structure is grown on collection wafer 20, the Acquisition Circuit coordinates MEMS structure to complete sensor
Gather the function of signal.
Step S4：Prepare cover plate 10, cover plate 10 is bonded on collection wafer 20 by wafer bonding technique, the cover plate
The encapsulation cavity of MEMS structure is formed between 10 and collection wafer 20.
Used as preferred scheme, the lower surface of the cover plate 10 has the getter for realizing vacuum environment in package cavity body
Material layer 11, it is adaptable to infrared thermal imaging sensor or other need the MEMS sensor of Vacuum Package.Here, step S4 is：
Prepare cover plate 10, under vacuum conditions activated degasser material layer 11, then cover plate 10 is bonded to by wafer bonding technique adopts
On collection wafer 20, the encapsulation cavity of MEMS structure is formed between the cover plate 10 and collection wafer 20.Now, it is in package cavity body
Vacuum environment.
As another preferred scheme, if the MEMS structure in sensor needs work in an inert atmosphere,
Here, step S4 can also be：Prepare cover plate 10, cover plate 10 is passed through into wafer bonding technique in the environment of inert gas shielding
It is bonded on collection wafer 20, the encapsulation cavity of MEMS structure is formed between the cover plate 10 and collection wafer 20.Now.Encapsulation
It is the environment of inert gas shielding in cavity.
Step S5：Packaging body after encapsulation is cut into slices, that is, is formed independent stack MEMS sensor.
Relative to embodiment 1, the technical scheme that embodiment 2 is provided can further increase the design space of process circuit,
Enhancing process circuit function.
Embodiment 3：Referring to Fig. 9, the present embodiment also provides a kind of stack MEMS sensor packaging body, other parts and reality
Apply example 1 identical, difference is：The collection wafer 20 is 2 wafers, is respectively collection wafer 1（20a）With collection wafer 2
(20b), growth has MEMS structure 21a and 21b respectively on collection wafer 1 and collection wafer 2.Here, MEMS structure 21a and
The function that 21b is realized can be the same or different, and is driven by the Acquisition Circuit on collection wafer.Preferably, the lid
The lower surface of plate 10 also has getter material layer 11, for realizing vacuum environment in package cavity body, it is adaptable to which infrared thermal imaging is passed
Sensor or other need the MEMS sensor of Vacuum Package.The conductive bridge pier can be metal bridge pier, it is also possible to by other energy
Enough materials for realizing electricity interconnection are made.The Acquisition Circuit uses 0.13 μm ~ 0.5 μm integrated circuit technology；The treatment
Circuit uses the integrated circuit technology of 14nm ~ 180nm.
Same as Example 1, the process circuit in the present embodiment on treatment wafer can include having control, calculate, divides
Analyse the central processor CPU or microprocessor MPU of function；Coordinating CPU or MPU carries out the Digital Signal Processing of Digital Signal Processing
Circuit DSP；Receive the control of CPU or MPU signals and to the Digital Analog Hybrid Circuits AD and interface of Acquisition Circuit transmission of control signals
Circuit.
Referring to Figure 10, independent stack MEMS sensor can be formed after above-mentioned packaging body is cut into slices.
Referring to Figure 11, based on above-mentioned stack MEMS sensor chip, its manufacturing process can specifically include：
Step S1：Preparation is formed with the treatment wafer 30 of process circuit and is formed with the collection wafer 1 of Acquisition Circuit
（20a）With collection wafer 2（20b）, wherein, the process circuit is used to control at Acquisition Circuit and the signal that will collect
Manage and export.
Step S2：Collection wafer 1（20a）By wafer scale bonding technology be bonded to treatment wafer 30 on, two wafers it
Between electrically interconnection is realized by conductive bridge pier 31.
Step S3：MEMS structure 21a is grown on collection wafer 20a, wafer 2 will be gathered again afterwards（20b）It is bonded to and adopts
Collection wafer 1（20a）On, and in collection wafer 2（20b）Upper continued growth MEMS structure 21b, the collection wafer 1 and collection are brilliant
The encapsulation cavity of MEMS structure is formed between circle 2, the Acquisition Circuit coordinates MEMS structure to complete the work(that sensor gathers signal
Can, electrically interconnection is realized by conductive bridge pier between all wafers.
Here, the MEMS structure 21a for being grown on collection wafer 1 can phase with the MEMS structure 21b of growth on collection wafer 2
Same or different, different MEMS structures can be used for realizing different sensor functions.
It should be noted that MEMS structure 21a here is by collection wafer 20b bonding packagings, because getter needs
Activated at, wafer is not suitable for directly being contacted with getter, therefore MEMS structure 21a is adapted to be operated in air or inert gas
Under environment.Now, step S3 is：MEMS structure 21a is grown on collection wafer 20a, afterwards in air or inert gas shielding
In the environment of will gather wafer 2（20b）It is bonded to collection wafer 1（20a）On, and in collection wafer 2（20b）Upper continued growth
MEMS structure 21b, electrically interconnection is realized between treatment wafer, collection wafer 1 and collection wafer 2 by conductive bridge pier, described to adopt
The encapsulation cavity of MEMS structure is formed between collection wafer 1 and collection wafer 2, the Acquisition Circuit coordinates MEMS structure to complete sensing
Device gathers the function of signal.
If MEMS structure 21a still needs work under vacuum conditions, need to be set and collection in encapsulation inside cavity
The heat-insulated good getter of wafer 1 and 2, now, step S3 is：MEMS structure 21a is grown on collection wafer 20a, in vacuum
Context Activation getter will gather wafer 2 again（20b）It is bonded to collection wafer 1（20a）On, and in collection wafer 2（20b）On after
Continuous growth MEMS structure 21b, forms the encapsulation cavity of MEMS structure 21a between the collection wafer 1 and collection wafer 2, described
Acquisition Circuit coordinates MEMS structure 21a, 21b to complete the function that sensor gathers signal, and conducting bridge is passed through between all wafers
Pier realizes electrically interconnection.
Step S4：Prepare cover plate 10, cover plate 10 is bonded on collection wafer 20b by wafer bonding technique, the lid
The encapsulation cavity of MEMS structure 21b is formed between plate 10 and collection wafer 20b.
Used as preferred scheme, the lower surface of the cover plate 10 has the getter for realizing vacuum environment in package cavity body
Material layer 11, it is adaptable to infrared thermal imaging sensor etc. other need the MEMS structure that works under vacuum conditions.Here, step
S4 is：Prepare cover plate 10, under vacuum conditions activated degasser material layer 11, then cover plate 10 is bonded by wafer bonding technique
To collection wafer 20b, the encapsulation cavity of MEMS structure 21b is formed between the cover plate 10 and collection wafer 20b.Now, seal
It behave affectedly in vivo for vacuum environment.
As another preferred scheme, if the MEMS structure 21b in sensor needs to be operated in inert gas environment
Under, here, step S4 can also be：Prepare cover plate 10, cover plate 10 is passed through into wafer bonding in the environment of inert gas shielding
Technique is bonded on collection wafer 20b, and the encapsulation cavity of MEMS structure 21b is formed between the cover plate 10 and collection wafer 20b.
Now, it is the environment of inert gas shielding in package cavity body.
Step S5：Packaging body after encapsulation is cut into slices, that is, is formed independent stack MEMS sensor.
Multiple collection wafers, Neng Goushi are provided in the technical scheme provided relative to embodiment 1 and embodiment 2, embodiment 3
Existing multiple sensors function.
In the above-described embodiments, wafer is gathered in embodiment 1 and treatment wafer is respectively 1, wafer is gathered in embodiment 2
For 1, treatment wafer be 2, in embodiment 3 gather wafer be 2, treatment wafer be 1.Relative to embodiment 1, embodiment
2 technical schemes for providing can further increase the design space of process circuit, strengthen process circuit function；Embodiment 3 is provided
Technical scheme can increase sensor function.
Certainly, the piece number of Acquisition Circuit and treatment wafer can also be arranged as required into 2,2,2,3 in the utility model,
3rd, 2,3,3 or other combination.It should be noted that the piece number of collection wafer and treatment wafer is not The more the better, on the one hand
Technological process can be increased, also chip thickness can in addition increased, it is proposed that carry out suitable selection as needed.
In a word, the utility model preferred embodiment is these are only, protection domain of the present utility model is not intended to limit,
Within scope of the present utility model, it is new that the equivalents or modification made to the utility model should be included in this practicality
Within the protection domain of type.
Claims (6)
1. a kind of stack MEMS sensor packaging body, it is characterised in that：Including
Cover plate, for encapsulating；
One or more pieces collection wafers, are formed with Acquisition Circuit and MEMS structure thereon, and the Acquisition Circuit coordinates MEMS structure
Realize that sensor gathers the function of signal；
One or more pieces treatment wafers, are formed with process circuit thereon, for controlling Acquisition Circuit and MEMS structure collection signal
And the signal that will be collected is processed and exported；
Described one or more pieces treatment wafers, one or more pieces collection wafers and cover plate are to use wafer scale bonding technology under
And upper bonding is formed, wherein, the encapsulation of MEMS structure is formed between cover plate and collection wafer or collection wafer and collection wafer
Cavity, electrically interconnection is realized between all wafers by conductive bridge pier.
2. a kind of stack MEMS sensor packaging body as claimed in claim 1, it is characterised in that：The cover plate following table mask
There is the getter material layer for realizing vacuum environment in package cavity body.
3. as described in claim 1 a kind of stack MEMS sensor packaging body, it is characterised in that：The Acquisition Circuit is
It is made of 0.13 μm ~ 0.5 μm integrated circuit technology；The process circuit is using the integrated circuit technology system of 14nm ~ 180nm
Into.
4. as described in claim 1 a kind of stack MEMS sensor packaging body, it is characterised in that：The conductive bridge pier is
Metal bridge pier.
5. a kind of stack MEMS sensor packaging body as any one of Claims 1-4, it is characterised in that：It is described
Acquisition Circuit is front-end processing circuit AFE；The process circuit includes thering is control, calculating, the central processing unit of analytic function
CPU or microprocessor MPU；Coordinating CPU or MPU carries out the digital signal processing circuit DSP of Digital Signal Processing；Receive CPU or
MPU signals are controlled and to the Digital Analog Hybrid Circuits AD and interface circuit of Acquisition Circuit transmission of control signals.
6. a kind of stack MEMS sensor chip, it is characterised in that：The stack MEMS sensor chip is by claim 1
A kind of stack MEMS sensor packaging body into 5 described in any one carries out section formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201621291773.0U CN206266221U (en) | 2016-11-29 | 2016-11-29 | Stack MEMS sensor packaging body and chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621291773.0U CN206266221U (en) | 2016-11-29 | 2016-11-29 | Stack MEMS sensor packaging body and chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106477510A (en) * | 2016-11-29 | 2017-03-08 | 合肥芯福传感器技术有限公司 | Stack MEMS sensor packaging body, chip and preparation method thereof |
| CN107879310A (en) * | 2017-11-06 | 2018-04-06 | 余帝乾 | A kind of multifunctional unit lamination sensor |
| CN114048166A (en) * | 2021-10-14 | 2022-02-15 | 西安紫光国芯半导体有限公司 | Heap MCU |
| CN115072652A (en) * | 2022-07-19 | 2022-09-20 | 武汉高芯科技有限公司 | Infrared detector chip packaging structure |
-
2016
- 2016-11-29 CN CN201621291773.0U patent/CN206266221U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106477510A (en) * | 2016-11-29 | 2017-03-08 | 合肥芯福传感器技术有限公司 | Stack MEMS sensor packaging body, chip and preparation method thereof |
| CN106477510B (en) * | 2016-11-29 | 2018-03-20 | 合肥芯福传感器技术有限公司 | Stack MEMS sensor packaging body, chip and preparation method thereof |
| CN107879310A (en) * | 2017-11-06 | 2018-04-06 | 余帝乾 | A kind of multifunctional unit lamination sensor |
| CN114048166A (en) * | 2021-10-14 | 2022-02-15 | 西安紫光国芯半导体有限公司 | Heap MCU |
| CN115072652A (en) * | 2022-07-19 | 2022-09-20 | 武汉高芯科技有限公司 | Infrared detector chip packaging structure |
| CN115072652B (en) * | 2022-07-19 | 2023-02-03 | 武汉高芯科技有限公司 | Infrared detector chip packaging structure |
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