CN105253851B - Chip-level system sensor and preparation method thereof - Google Patents
Chip-level system sensor and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of sensors, and in particular relates to a novel chip-level system sensor (SOS, System On Sensor) and a preparation method thereof. The novel chip-level system sensor comprises a sensing component, an MEMS (Micro-Electro Mechanical System) sensing platform and an ASIC (Application Specific Integrated Circuit) integrated circuit, wherein the sensing component is used for acquiring parameters required by measurement; the MEMS sensing platform is used for controlling the sensing component to acquire signals and convert the acquired signals into electrical signals; and the ASIC integrated circuit is used for controlling the MEMS sensing platform to acquire the signals and perform data operation, analysis, control and output of the acquired signals. The ASIC integrated circuit, the MEMS sensing platform and the sensing component are integrally formed on a silicon wafer through a single-chip integrated process; the ASIC integrated circuit, the MEMS sensing platform and the sensing component are configured together through a stereo circuit interconnection structure; sensing, analysis, control and communication functions can be integrated in the chip-level sensor, the volume of which is very small; the self system-level closed loop is realized; the problems of non-steady signal and low reliability and precision due to the traditional peripheral circuit can be solved; the performances of sensor products are improved comprehensively; and the chip-level system sensor is particularly applied to being installed on terminal products, which are high in precision, low in power consumption, ultra-small in volume and intelligent.
Description
Technical field
The present invention relates to sensor technical field, more particularly to a kind of new systems-on-a-chip sensor（SOS ,
System On Sensor）And preparation method thereof.
Background technology
Sensor（Sensor）Be it is a kind of can experience measured information, and be transformed to according to certain rules the signal of telecommunication or its
The device or device of his desired form output.In miscellaneous sensor, based on microelectronics and micromachining technology system
The MEMS sensor created becomes one of great sciemtifec and technical sphere that the world attractes attention.Compared with traditional sensors, it has volume
Little, low cost, it is low in energy consumption, be easily integrated and realize intelligentized feature.Simultaneously the characteristic size of micron dimension causes it can be with
Complete some irrealizable functions of traditional mechanical sensor institute.
Miniaturization and integrated, low-power consumption and low cost, height as micro element range of application constantly expands, to micro element
Precision and long-life, multi-functional and intellectuality are put forward higher requirement.The integrated of micro structure and integrated circuit can be with
Above-mentioned requirements are met well.
At present, integrated MEMS product majority adopts hybrid integrated, in hybrid integrated scheme, MEMS chip and special integrated
Circuit asic chip is manufactured and scribing respectively, and is integrated in common shell in encapsulation, by wire bonding or flip chip bonding
Realization is electrically connected, and is then connected in interface circuit, as shown in Figure 1.Dual chip, the Integrated Solution of single tube shell by MEMS technology and
CMOS technology is thoroughly isolated, and CMOS technology line will not be polluted in MEMS manufacture processes, but introduces pad and lead more
Parasitic capacitance and crosstalk signal transmission quality is declined, be particularly unsuitable for frequency applications situation.
With development in science and technology, also have a few studies and manufacturer can realize the monolithic integration process of circuit and micro structure：
CMOS+MEMS technology, that is, MEMS structure and cmos circuit are produced on same tube core, will be MEMS structure and CMOS electric
Road successively makes on the same substrate, i.e., Top-down design or by MEMS structure and cmos circuit in the different positions of same substrate
Put while or successively making, i.e. horizontal integrating.Single-chip integration can reduce interface impact, and reduces cost realizes MEMS systems on piece
System.But in the production technology of current MEMS sensor, only sensing element, MEMS sensing units, AFE front-end circuits are carried out
Single-chip integration, therefore also need to for above-mentioned Top-down design chip to be connected to the modules such as Digital Analog Hybrid Circuits, the interface circuit of periphery
The various functions of MEMS sensor can be realized, as shown in Figure 2.The presence of peripheral circuit not only results in sensor terminal product
Product unstable properties, more reduce to sensor cost and the reduction of size causes to limit, and seriously constrain MEMS sensor court and enter
The intellectuality of one step, small size, high target, high-performance, inexpensive direction are developed.
The content of the invention
In order to solve the above problems, it is an object of the invention to provide a kind of New-core chip level system sensor（SOS ,
System On Sensor）.
For reaching above effect, the technical solution used in the present invention is：A kind of New-core chip level system sensor, including
Sensing element, for gathering signal；
MEMS sensing platforms, for controlling sensing element collection signal and the signal for collecting being converted to the signal of telecommunication；
ASIC integrated circuits, for controlling MEMS sensing platforms collection signal and the signal for collecting being carried out data fortune
Calculate, analyze, control, export；
The ASIC integrated circuits, MEMS sensing platforms and sensing element are using monolithic integration process one in silicon wafer
Body is made, and is got up by IC stereo circuit interconnection architecture configurations each other.
Preferably, the ASIC integrated circuits are included with control, calculating, the central processor CPU of analytic function or micro-
Processor MCU；CPU or MCU is coordinated to carry out the digital signal processing circuit DSP of Digital Signal Processing；Receive CPU or MCU signals
Control and to Digital Analog Hybrid Circuits A/D of MEMS sensing platform transmission of control signals.
Preferably, the MEMS sensing platforms include MEMS sensor and MEMS actuators, the MEMS sensor with
Sensing element is interconnected, and MEMS actuators are instructed and to MEMS sensor for receiving ASIC integrated circuits or Digital Analog Hybrid Circuits A/D
Front-end processing circuit AFE of sending action instruction.
Preferably, the sensing element has one or more sensor arrays.
In order to solve the above problems, another object of the present invention is to provide a kind of system of systems-on-a-chip sensor SOS
Preparation Method, comprises the steps：
1. prepare the silicon wafer of cleaning；
2. grown in silicon wafer with control MEMS sensing platforms collection signal using integrated circuit technology and
The signal for collecting is carried out into the ASIC integrated circuits of data operation, analysis, control, the function of output；
3. produced on ASIC integrated circuits region for controlling sensing element collection signal and will adopt using MEMS technology
The signal for collecting is converted to the MEMS sensing platforms of the signal of telecommunication；
4. the sensing element material layer for gathering signal is made on MEMS sensing platforms.
Preferably, the ASIC integrated circuits in step 2. middle making include with control, calculate, the centre of analytic function
Reason device CPU or Micro-processor MCV；CPU or MCU is coordinated to carry out the digital signal processing circuit DSP of Digital Signal Processing；Receive
CPU or MCU signals are controlled and to Digital Analog Hybrid Circuits A/D of MEMS sensing platform transmission of control signals.
Preferably, the MEMS sensing platforms in step 3. middle making include MEMS sensor and MEMS actuators, described
MEMS sensor is interconnected with sensing element, and MEMS actuators are instructed and sent out to MEMS sensor for receiving Digital Analog Hybrid Circuits A/D
Send front-end processing circuit AFE of action command.
Preferably, the sensing element has one or more sensor arrays.
Compared with prior art, there is following technique effect in the present invention：
1）The present invention is being electrically connected for abandoning tradition packaging technology, adopts single-chip integration, stereoscopic electric in silicon wafer
The systems-on-a-chip sensor that road processing technique integration is made, can will control, communication, sensing, analytic function it is integrated
In the chip internal of a system sensor, self closed loop is realized.Only need to be to defeated in system sensor on this architecture basics
Enter the intelligent control circuits such as base instruction, such as When, What, CPU or MCU and can complete a series of control operational analyses simultaneously
Result is exported.Caused by solving the problems, such as the presence due to peripheral circuit, jitter, reliability and precision be not high, entirely
Product sensor performance is improved in face, can sense ultralow signal；
2）In silicon wafer, adopt the chip-scale that single-chip integration, stereo circuit processing technique integration are made new
System-level sensor, its volume have compared with traditional product and significantly decline, and not only manufacturing cost is significantly reduced, and power consumption is also therewith
Reduce, be particularly suited for being attached on the end product of high accuracy, low-power consumption, small size.
Description of the drawings
Fig. 1 is 1 structural representation of prior art；
Fig. 2 is 2 structural representation of prior art；
Fig. 3 is single-chip integration scheme schematic diagram of the present invention；
Fig. 4 is dimensional structure diagram of the present invention；
Fig. 5 is logic function schematic diagram of the present invention；
Fig. 6 is manufacture method flow chart of the present invention.
Specific embodiment
With reference to Fig. 3 to Fig. 6, the present invention is described in further detail：
Referring to Fig. 3 and Fig. 4, a kind of new system-level sensor 200, including sensing element 201, for gathering signal, institute
Sensing element is stated with one or more sensor arrays, suitable for image sensing technical field；MEMS sensing platforms 202, for controlling
The signal for collecting simultaneously is converted to the signal of telecommunication by sensing element collection signal processed；ASIC integrated circuits 203, for controlling MEMS sensings
Platform gathers signal and the signal for collecting is carried out data operation, analysis, control, output；The ASIC integrated circuits
203rd, MEMS sensing platforms 202 and sensing element 201 using monolithic integration process the integration in silicon wafer 204 make and
Into being got up by IC stereo circuit interconnection architecture configurations each other.
Further, the ASIC integrated circuits 203 include with control, calculate, the central processing unit of analytic function
CPU or Micro-processor MCV；CPU or MCU is coordinated to carry out the digital signal processing circuit DSP of Digital Signal Processing；Receive CPU or
MCU signals are controlled and to Digital Analog Hybrid Circuits A/D of MEMS sensing platform transmission of control signals.Wherein, the CPU of microcode or
MCU determines the intelligentized control method of system-level sensor, only need to refer to sensor internal input basis on this architecture basics
Order, such as When, What, CPU or MCU can complete a series of control operational analyses and export result.Therefore, by CPU or
It is the key for realizing the system-level sensor intelligent that MCU is integrated in sensor internal.In addition, the integrated electricity of the ASIC of the present invention
Road can also be set up according to demand or reduce the corresponding function module, it is not limited to this.
Further, the MEMS sensing platforms include MEMS sensor and MEMS actuators, the MEMS sensor
Interconnect with sensing element, MEMS actuators are instructed and sensed to MEMS for receiving ASIC integrated circuits or Digital Analog Hybrid Circuits A/D
Front-end processing circuit AFE of device sending action instruction.
Referring to Fig. 5, it is the logical schematic of the preferred embodiment of the present invention, system-level sensor SOS complete one action
Process is：By I/O mouths to CPU input signals, CPU starts working and can instruct digital signal processing circuit DSP to input
Signal carries out processing backward Digital Analog Hybrid Circuits A/D transmission digital signal, and Digital Analog Hybrid Circuits A/D are by the digital signal for receiving
Be converted into analogue signal to transmit to front-end processing circuit AFE, that is, MEMS actuators, from front-end processing circuit AFE to
MEMS sensor sending action is instructed, and MEMS sensor controls sensing element collection measured signal and send back to MEMS after receiving instruction
The signal for collecting is converted into sending back to front-end processing circuit AFE after the signal of telecommunication by sensor, MEMS sensor, after AFE is received
Carry out preliminary treatment to the signal and be sent to Digital Analog Hybrid Circuits, Digital Analog Hybrid Circuits by the analogue signal for collecting change to
Send after digital signal to intelligent control circuit CPU, CPU can instruct digital signal processing circuit DSP to enter the digital signal
CPU is beamed back after row data processing, and the signal after calculation process is analyzed is exported by CPU by I/O mouths.
Referring to Fig. 6, the ASIC integrated circuits, MEMS sensing platforms and array in the novel system level sensor SOS
Sensing element is that in silicon wafer, integration is made using monolithic integration process.Manufacture method preferably is single-chip integration
Post-CMOS techniques in technique：Prepare the silicon wafer after cleaning；By integrated circuits such as CMOS, BCD in silicon wafer
Digital circuit, analog circuit, intelligent control circuit, digital operational circuit etc. are designed, are produced by technique platform, form ASIC
Integrated circuit；Adopt MEMS technology on ASIC circuit region, by way of " building a building " respectively by MEMS sensor and
MEMS actuators（AFE）Design, produce in subregion；It is last to make sensing element material layer, shape on MEMS sensing platforms
Into a complete system-level sensor chip.This new chip-scale sensor architecture is integrated equal to by traditional tens
Circuit, MEMS sensor and actuator are integrated, and are got up by advanced stereo circuit interconnection architecture configuration each other,
Realize extremely complex intelligence sensor function.Certainly, the making of system-level sensor SOS of the invention can also adopt other
Monolithic integration process, such as Pre-COMS or Intra-CMOS integrated techniques are not limited to this completing.
Invention creates a kind of new systems-on-a-chip sensor architecture, in silicon wafer using single-chip integration,
Stereo circuit processing technique integration is made, and control, communication, sensing, analytic function are integrated in a system sensor
Chip internal, realize self closed loop, solve jitter, reliability caused by the presence of packaging technology and peripheral circuit
Property and the not high problem of precision, improve product sensor performance comprehensively, ultralow signal can be sensed.
In addition, using single-chip integration, the systems-on-a-chip sensor of stereo circuit processing technique making, its volume is more traditional
Product has and significantly declines, and not only manufacturing cost is significantly reduced, and power consumption is also decreased, and is particularly suited for being attached to low work(
On consumption, the end product of small size.
In a word, preferred embodiments of the present invention are these are only, is not intended to limit protection scope of the present invention, in the present invention
Scope within, the equivalents made of the present invention or modification should be included within the scope of the present invention.
Claims (8)
1. a kind of systems-on-a-chip sensor, it is characterised in that：
Including sensing element, for gathering signal；
MEMS sensing platforms, for controlling sensing element collection signal and the signal for collecting being converted to the signal of telecommunication；
ASIC integrated circuits, for control MEMS sensing platforms collection signal and by the signal for collecting carry out data operation,
Analysis, control, output；
The ASIC integrated circuits, MEMS sensing platforms and sensing element using monolithic integration process on silicon wafer substrate from
Lower and upper integration is made, and is got up by three-dimensional IC circuits interconnection architecture configuration each other.
2. a kind of systems-on-a-chip sensor as claimed in claim 1, it is characterised in that：The ASIC integrated circuits include tool
There are control, calculating, the central processor CPU of analytic function or Micro-processor MCV；CPU or MCU is coordinated to carry out Digital Signal Processing
Digital signal processing circuit DSP；Receive the control of CPU or MCU signals and to the digital-to-analogue of MEMS sensing platform transmission of control signals
Hybrid circuit A/D.
3. a kind of systems-on-a-chip sensor as claimed in claim 2, it is characterised in that：The MEMS sensing platforms include
MEMS sensor and MEMS actuators, the MEMS sensor are interconnected with sensing element, and MEMS actuators are mixed for receiving digital-to-analogue
Close circuit A/D instructions front-end processing circuit AFE to the instruction of MEMS sensor sending action.
4. a kind of systems-on-a-chip sensor as described in any one of claims 1 to 3, it is characterised in that：The sensing element tool
There are one or more sensor arrays.
5. a kind of preparation method of systems-on-a-chip sensor, it is characterised in that：Comprise the steps：
1. prepare the silicon wafer of cleaning；
2. grow in silicon wafer with control MEMS sensing platforms collection signal and will adopt using integrated circuit technology
The signal for collecting carries out data operation, analysis, control, the ASIC integrated circuits of the function of output；
3. produced on ASIC integrated circuits region for controlling sensing element collection signal and will collect using MEMS technology
Signal be converted to the MEMS sensing platforms of the signal of telecommunication；
4. the sensing element material layer for gathering signal is made on MEMS sensing platforms.
6. the preparation method of a kind of systems-on-a-chip sensor according to claim 5, it is characterised in that：Step 2. in
The ASIC integrated circuits of making are included with control, calculating, the central processor CPU of analytic function or Micro-processor MCV；Coordinate
CPU or MCU carries out the digital signal processing circuit DSP of Digital Signal Processing；Receive the control of CPU or MCU signals and pass to MEMS
Digital Analog Hybrid Circuits A/D of sense platform transmission of control signals.
7. the preparation method of a kind of systems-on-a-chip sensor according to claim 6, it is characterised in that：Step 3. in
The MEMS sensing platforms of making include MEMS sensor and MEMS actuators, and the MEMS sensor is interconnected with sensing element,
MEMS actuators are to receive the instruction of Digital Analog Hybrid Circuits A/D the front-end processing circuit to the instruction of MEMS sensor sending action
AFE。
8. the preparation method of a kind of systems-on-a-chip sensor according to any one of claim 5 to 7, it is characterised in that：
The sensing element has one or more sensor arrays.
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| CN107174220A (en) * | 2016-03-11 | 2017-09-19 | 合肥芯福传感器技术有限公司 | Multi-mode biopotential sensor based on intelligent processor platform |
| CN105621345B (en) * | 2016-03-11 | 2018-06-29 | 华天科技（昆山）电子有限公司 | The encapsulating structure and packaging method that MEMS chip integrates |
| CN107179130A (en) * | 2016-03-11 | 2017-09-19 | 合肥芯福传感器技术有限公司 | Infrared thermal imaging sensor based on intelligent processor platform |
| CN106477510B (en) * | 2016-11-29 | 2018-03-20 | 合肥芯福传感器技术有限公司 | Stack MEMS sensor packaging body, chip and preparation method thereof |
| CN106448121A (en) * | 2016-12-12 | 2017-02-22 | 北京强度环境研究所 | Wireless sensor |
| CN107169482A (en) * | 2017-07-07 | 2017-09-15 | 合肥芯福传感器技术有限公司 | One kind encryption phased array fingerprint sensor |
| CN110346423B (en) | 2019-07-02 | 2021-05-04 | 杭州未名信科科技有限公司 | CMOS-MEMS humidity sensor |
| CN112479152B (en) * | 2020-12-11 | 2021-11-09 | 重庆忽米网络科技有限公司 | Integrated state monitoring edge calculator based on micro-electromechanical sensor fusion |
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| CN103274352A (en) * | 2013-05-23 | 2013-09-04 | 安徽海聚信息科技有限责任公司 | MEMS module and control system based on same |
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| US8250921B2 (en) * | 2007-07-06 | 2012-08-28 | Invensense, Inc. | Integrated motion processing unit (MPU) with MEMS inertial sensing and embedded digital electronics |
| CN102238463B (en) * | 2010-04-30 | 2014-09-03 | 比亚迪股份有限公司 | Method and chip for integrating silicon microphone device with IC (integrated circuit) single chip |
| CN102344110B (en) * | 2011-10-31 | 2015-07-15 | 嘉盛半导体(苏州)有限公司 | Quad flat non-leaded package structure and method of micro electro mechanical system device |
| DE102012210049A1 (en) * | 2012-06-14 | 2013-12-19 | Robert Bosch Gmbh | Hybrid integrated component and method for its production |
| US9511996B2 (en) * | 2012-07-31 | 2016-12-06 | Soitec | Methods of forming semiconductor structures including MEMS devices and integrated circuits on common sides of substrates, and related structures and devices |
| US9238578B2 (en) * | 2014-03-07 | 2016-01-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement with stress release and thermal insulation |
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