CN107179130A - Infrared thermal imaging sensor based on intelligent processor platform - Google Patents
Infrared thermal imaging sensor based on intelligent processor platform Download PDFInfo
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- CN107179130A CN107179130A CN201610138286.9A CN201610138286A CN107179130A CN 107179130 A CN107179130 A CN 107179130A CN 201610138286 A CN201610138286 A CN 201610138286A CN 107179130 A CN107179130 A CN 107179130A
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- 238000001931 thermography Methods 0.000 title claims abstract description 19
- 238000003491 array Methods 0.000 claims abstract description 24
- 230000010354 integration Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000004458 analytical method Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 abstract description 6
- 230000036541 health Effects 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Abstract
The present invention relates to a kind of infrared thermal imaging sensor based on intelligent processor platform, including MEMS sensor arrays, for gathering infrared signal, infrared signal is converted into analog signal；Intelligent processor platform, for controlling MEMS sensor arrays to gather infrared signal and the infrared signal collected being carried out into data operation, analysis, control, output；Integrated power supply, power supply and reference voltage are provided for sensor；The MEMS sensor arrays, intelligent processor platform and integrated power supply are made using monolithic integration process integration on silicon wafer substrate, so that sensor bulk reduces more than 70%, cost declines more than 80%, its performance, index and stability also have General Promotion simultaneously, for example, core NETD indexs reach 18~60mk, can be widely applied to the fields such as intelligent automobile, medical treatment ＆ health, unmanned plane, robot, safety monitoring, fire fighting monitoring, industrial production, instrument and meter.
Description
Technical field
The present invention relates to sensor technical field, more particularly to a kind of infrared thermal imaging sensor based on intelligent processor platform.
Background technology
The infrared thermal imaging sensor and THz imaging sensors of non-brake method possess irreplaceable application function, good market prospect, and there is low price, it is small volume, low in energy consumption, reliable high, easy to operate.With the progressively development of microelectronics and micromachined MEMS technology, these advantages of uncooled ir thermal imaging sensor and THz imaging sensors are further strengthened, one of focus developed as high-tech technical field.
In the prior art, MEMS infrared thermal imagings sensor majority is using the manufacture of hybrid integrated scheme, MEMS infrared sensings chip 30 and signal processing chip 40 are manufactured and scribing respectively, and be integrated into encapsulation in common shell 20, between realized and be electrically connected by wire bonding or flip chip bonding, as shown in Figure 1.Dual chip, the Integrated Solution of single tube shell thoroughly isolate MEMS technology and CMOS technology, CMOS technology line will not be polluted in MEMS manufacturing processes, but the parasitic capacitance and crosstalk introduced pad and lead causes signal transmission quality to decline more, causes sensor terminal properties of product unstable；In addition, more sensor cost is reduced for the Integrated Solution of dual chip, single tube shell and the reduction of size causes limitation, seriously constrain MEMS infrared thermal imagings sensor and develop towards further intellectuality, small size, high target, high-performance, inexpensive direction.
The content of the invention
In order to solve the above problems, it is an object of the invention to provide a kind of infrared thermal imaging sensor based on intelligent processor platform of high integration.
The technical solution adopted by the present invention is：A kind of infrared thermal imaging sensor based on intelligent processor platform, including MEMS sensor arrays, for gathering infrared signal and infrared signal being converted into analog signal；Intelligent processor platform, for controlling MEMS sensor arrays to gather infrared signal and the infrared signal collected being carried out into data operation, analysis, control, output；Integrated power supply, is that MEMS sensor arrays and intelligent processor platform provide power supply and reference voltage；The MEMS sensor arrays, intelligent processor platform and integrated power supply are made using monolithic integration process integration on silicon wafer substrate.
Preferably, the intelligent processor platform includes ROIC Acquisition Circuits, DSP+GPU+MCU processor units and system interface, the ROIC Acquisition Circuits, are connected to MEMS sensor arrays, for completing analog signal processing, analog and digital signal conversion, Digital Logic control and digital signal output；The DSP+GPU+MCU processor units, are connected to ROIC Acquisition Circuits, algorithm process, intellectual analysis, overall control and human-machine operation for completing image；The system interface, is connected to DSP+GPU+MCU processor units, for being docked with outside.
Preferably, the MEMS sensor arrays are made up of 4x4~1920x1080 pel array, and each Pixel Dimensions are between 7um~35um.
Preferably, the ROIC Acquisition Circuits are made up of analog processing circuit, adc circuit and logic control circuit.
Preferably, the MCU+DSP+GPU processor units are made up of MCU control centres and DSP+GPU processing centers, and the MCU control centres are made up of CPU, RAM and ROM；The DSP+GPU processing centers are made up of DSP, GPU, RAM and ROM.
Preferably, the system interface is made up of interface circuit and logic circuit, and the interface circuit has the one or more in serial, parallel or control interface.
Preferably, the integrated power supply by low pressure difference linear voltage regulator LDO, dc chopper DC DC and logic circuit constitute.
Compared with prior art, there is following technique effect in the present invention：
The present invention is using the system on chip architecture design innovated, utilize single-chip integration, stereo circuit processing technology is by MEMS sensor arrays, intelligent processor unit and integrated power supply are integrated in inside sensor chip, MPU can be docked by sensor interface, other applications processors such as SOC, avoid setting traditional ADC in periphery, other expensive data processing circuits such as DSP or FPGA, so that sensor bulk reduces more than 70%, cost declines more than 80%, while its performance, index and stability also have General Promotion, for example, core NETD indexs reach 18~60mk, it can be widely applied to intelligent automobile, medical treatment ＆ health, unmanned plane, robot, safety monitoring, fire fighting monitoring, industrial production, the fields such as instrument and meter.
Brief description of the drawings
Fig. 1 is prior art construction schematic diagram；
Fig. 2 schematic structural views of the invention；
Fig. 3 is logic function schematic diagram of the present invention；
Fig. 4 is MEMS sensor array schematic diagrames in Fig. 3；
Fig. 5 is ROIC Acquisition Circuit block diagrams in Fig. 3；
Fig. 6 is DSP+GPU processing center block diagrams in Fig. 3；
Fig. 7 is Tu3Zhong MCU control centres block diagram；
Fig. 8 is system interface block diagram in Fig. 3；
Fig. 9 is integrated power supply block diagram in Fig. 3.
Embodiment
With reference to Fig. 2 to Fig. 9, the present invention is described in further detail.
Referring to Fig. 2, infrared signal, for gathering infrared signal, is converted to analog signal by a kind of infrared thermal imaging sensor 50 based on intelligent processor platform, including MEMS sensor arrays；Intelligent processor platform, for controlling MEMS sensor arrays to gather infrared signal and the infrared signal collected being carried out into data operation, analysis, control, output；The MEMS sensor arrays, intelligent processor platform and integrated power supply are made using monolithic integration process integration on silicon wafer substrate, are got up each other by IC stereo circuit interconnection architecture configurations.The present invention uses on-chip system architecture design, MEMS sensor arrays, intelligent processor unit and integrated power supply are integrated in an independent sensor chip 50, it is encapsulated in shell 20, the institute that can complete infrared thermal imaging sensor by various application processors such as interface docking MPU, SOC is functional.
Specifically, referring to Fig. 3, the intelligent processor platform includes ROIC Acquisition Circuits, DSP+GPU+MCU processor units and system interface, the ROIC Acquisition Circuits, MEMS sensor arrays are connected to, for completing analog signal processing, analog and digital signal conversion, Digital Logic control and digital signal output；The DSP+GPU+MCU processor units, are connected to ROIC Acquisition Circuits, algorithm process, intellectual analysis, overall control and human-machine operation for completing image；The system interface, is connected to DSP+GPU+MCU processor units, for being docked with outside.
Referring to Fig. 4, the MEMS sensor arrays can be made up of 4x4~1920x1080 pel array, and each Pixel Dimensions are between 7um~35um.
Referring to Fig. 5, the ROIC Acquisition Circuits are connected to MEMS sensor arrays, are made up of analog processing circuit, adc circuit, logic control circuit, for completing analog signal processing, analog and digital signal conversion, Digital Logic control and digital signal output.
Referring to Fig. 6 and Fig. 7, the MCU+DSP+GPU processor units are connected to ROIC Acquisition Circuits, are made up of MCU control centres and DSP+GPU processing centers, and the MCU control centres are made up of CPU, RAM and ROM, overall control and human-machine operation for completing image；The DSP+GPU processing centers are made up of DSP, GPU, RAM and ROM, algorithm process and intellectual analysis for completing image.
Referring to Fig. 8, the system interface is connected to MCU control unit, with the one or more in serial, parallel or control interface, for being docked with outside；Specifically, the serial line interface can be MIPI interfaces, for video frequency output；The parallel interface can be ITU601, ITU656 or ITU1120；The control interface can be I2C, SPI, start and stop of the control serial or parallel interface with outside to connection function.
Referring to Fig. 9, the integrated power supply, by low pressure difference linear voltage regulator LDO, dc chopper DC DC and logic circuit constitute, provide low noise, the power supply of low ripple and high accuracy, the reference voltage of low noise for sensor.
The present invention is the system on chip architecture design based on innovation, using single-chip integration, stereo circuit processing technology is by MEMS sensor arrays, Acquisition Circuit, processor unit, system interface and integrated power supply are integrated in inside sensor chip, MPU can be docked by ITU601/656/1120 parallel interfaces and MIPI serial line interfaces, other applications processors such as SOC, avoid setting traditional ADC in periphery, other expensive data processing circuits such as DSP or FPGA, so that sensor bulk reduces more than 70%, cost declines more than 80%, while its performance, index and stability also have General Promotion, for example, core NETD indexs reach 18~60mk, it can be widely applied to intelligent automobile, medical treatment ＆ health, unmanned plane, robot, safety monitoring, fire fighting monitoring, industrial production, the fields such as instrument and meter.
In a word, preferred embodiments of the present invention are these are only, are not intended to limit the scope of the present invention, within the scope of the present invention, the equivalents or modification made to the present invention should be included in the scope of the protection.
Claims (7)
1. a kind of infrared thermal imaging sensor based on intelligent processor platform, it is characterised in that：Including MEMS sensor arrays, for gathering infrared signal and infrared signal being converted into analog signal；Intelligent processor platform, for controlling MEMS sensor arrays to gather infrared signal and the infrared signal collected being carried out into data operation, analysis, control, output；Integrated power supply, is that MEMS sensor arrays and intelligent processor platform provide power supply and reference voltage；The MEMS sensor arrays, intelligent processor platform and integrated power supply are made using monolithic integration process integration on silicon wafer substrate.
2. a kind of infrared thermal imaging sensor based on intelligent processor platform according to claim 1, it is characterised in that：The intelligent processor platform includes ROIC Acquisition Circuits, DSP+GPU+MCU processor units and system interface, the ROIC Acquisition Circuits, MEMS sensor arrays are connected to, for completing analog signal processing, analog and digital signal conversion, Digital Logic control and digital signal output；The DSP+GPU+MCU processor units, are connected to ROIC Acquisition Circuits, algorithm process, intellectual analysis, overall control and human-machine operation for completing image；The system interface, is connected to DSP+GPU+MCU processor units, for being docked with outside.
3. a kind of infrared thermal imaging sensor based on intelligent processor platform according to claim 1 or 2, it is characterised in that：The MEMS sensor arrays are made up of 4x4~1920x1080 pel array, and each Pixel Dimensions are between 7um~35um.
4. a kind of infrared thermal imaging sensor based on intelligent processor platform according to claim 1, it is characterised in that：The ROIC Acquisition Circuits are made up of analog processing circuit, adc circuit and logic control circuit.
5. a kind of infrared thermal imaging sensor based on intelligent processor platform according to claim 1, it is characterised in that：The MCU+DSP+GPU processor units are made up of MCU control centres and DSP+GPU processing centers, and the MCU control centres are made up of CPU, RAM and ROM；The DSP+GPU processing centers are made up of DSP, GPU, RAM and ROM.
6. a kind of infrared thermal imaging sensor based on intelligent processor platform according to claim 1, it is characterised in that：The system interface is made up of interface circuit and logic circuit, and the interface circuit has the one or more in serial, parallel or control interface.
7. a kind of infrared thermal imaging sensor based on intelligent processor platform according to claim 1, it is characterised in that：The integrated power supply by low pressure difference linear voltage regulator LDO, dc chopper DC DC and logic circuit constitute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610138286.9A CN107179130A (en) | 2016-03-11 | 2016-03-11 | Infrared thermal imaging sensor based on intelligent processor platform |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610138286.9A CN107179130A (en) | 2016-03-11 | 2016-03-11 | Infrared thermal imaging sensor based on intelligent processor platform |
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| CN107179130A true CN107179130A (en) | 2017-09-19 |
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| CN201610138286.9A Pending CN107179130A (en) | 2016-03-11 | 2016-03-11 | Infrared thermal imaging sensor based on intelligent processor platform |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108052934A (en) * | 2018-01-29 | 2018-05-18 | 安徽云塔电子科技有限公司 | A kind of intelligent Sensorsystem framework and its implementation, device |
| CN111953333A (en) * | 2020-07-30 | 2020-11-17 | 苏州大学 | Array type MEMS sensor SPI parallel data acquisition circuit and acquisition method |
| CN112284534A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | Novel terahertz frequency spectrograph |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108052934A (en) * | 2018-01-29 | 2018-05-18 | 安徽云塔电子科技有限公司 | A kind of intelligent Sensorsystem framework and its implementation, device |
| CN111953333A (en) * | 2020-07-30 | 2020-11-17 | 苏州大学 | Array type MEMS sensor SPI parallel data acquisition circuit and acquisition method |
| CN111953333B (en) * | 2020-07-30 | 2023-09-29 | 苏州大学 | SPI parallel data acquisition circuit and sensing system of array MEMS sensor |
| CN112284534A (en) * | 2020-09-03 | 2021-01-29 | 广东工业大学 | Novel terahertz frequency spectrograph |
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Application publication date: 20170919 |
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