CN205985020U - Polycrystal silicon chip of high conversion - Google Patents
Polycrystal silicon chip of high conversion Download PDFInfo
- Publication number
- CN205985020U CN205985020U CN201621021282.4U CN201621021282U CN205985020U CN 205985020 U CN205985020 U CN 205985020U CN 201621021282 U CN201621021282 U CN 201621021282U CN 205985020 U CN205985020 U CN 205985020U
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- CN
- China
- Prior art keywords
- silicon chip
- polycrystal silicon
- layer
- high conversion
- reflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model belongs to the technical field of the heliotechnics and specifically relates to a high conversion efficiency polycrystal silicon chip, protect glass and reflection of light backplate thoroughly including polycrystal silicon chip, height, the up end of polycrystal silicon chip is provided with the silica passivation layer, the up end of silica passivation layer is provided with and subtracts the layer of turning over, the surface that subtracts the layer of turning over be rectangular be provided with a plurality of be used for increase and sunlight area of contact subtract the reflection recess, a plurality of it is provided with bonding bar to subtract between the reflection recess, the last bonding of bonding bar has the height that is used for the protection to subtract the layer of turning over to protect glass thoroughly, the lower terminal surface of polycrystal silicon chip bonds and has reflection of light backplate, and the planar polycrystal silicon chip of this high conversion efficiency polycrystal silicon chip contrast setting subtracting reflection recess has increased the area with the sunlight contact, has reduced the reflecting rate of polycrystal silicon chip, has promoted sun photon utilization ratio, has reached the effect that improves the photoelectric conversion efficiency of polycrystal silicon chip.
Description
Technical field
This utility model is related to technical field of photovoltaic power generation, more particularly, to a kind of polysilicon chip of high conversion.
Background technology
Increasingly highlighting with energy crisis, developing new forms of energy becomes the major subjects of current energy field research,
Due to solar energy have the advantages that pollution-free, no region limit, inexhaustible, it is new that research solar electrical energy generation becomes exploitation
The Main way of the energy, crystal silicon solar energy battery, is current solaode by solaode prepared by crystal silicon chip
The main product of industry, in the market of current solaode, crystal silicon solar energy battery occupies more than 90% share, and
Crystal silicon solar energy battery mainly has monocrystalline silicon piece and two kinds of polysilicon chip, and it is more extensive that polysilicon chip uses, but traditional
Polysilicon chip is unreasonable due to structure design, lead to absorb luminous energy effect poor, electric energy conversion ratio is low, and to this, we release one
Plant the good polysilicon chip of anti-reflective effect.
Utility model content
The purpose of this utility model is to solve shortcoming present in prior art, and a kind of high conversion proposing
Polysilicon chip.
To achieve these goals, this utility model employs following technical scheme：
Design a kind of polysilicon chip of high conversion, including silicon chip body, the upper surface of described silicon chip body is equidistantly provided with V
Making herbs into wool layer is etched with shape groove, and described V-shaped groove, described making herbs into wool layer has been sequentially depositing silicon nitride passive film, silicon nitride anti-reflection
Penetrate film and silicon oxide antireflective coating, and described silicon oxide antireflective coating is provided with anelectrode, the lower surface of described silicon chip body sets
There is back of the body electric field, and described back of the body electric field is provided with and carries on the back the back electrode that electric field electrically connects.
Preferably it is preferred that the lower surface of described silicon chip body is provided with anticorrosive coat, and four corners of described silicon chip body
On be all enclosed with butadiene rubber layer.
The utility model proposes a kind of high conversion polysilicon chip, have the beneficial effects that：The polycrystalline of this high conversion
Silicon chip, the V-shaped groove being provided with silicon chip body can strengthen the absorption to sunlight, improves order of reflection, it is to avoid because of silicon chip body
Upper matte flat smooth and make the problem of reflection optical losses, thus improve electric energy conversion, silicon nitride passive film, silicon nitride antireflective
Film and three layers of silicon oxide antireflective coating are successively set on silicon chip body, not only have more preferably anti-reflective effect, and enhance table
The passivation effect in face, electric transformation efficiency is high, and back of the body electric field can improve conversion more fully using carrying out photoelectric conversion by light very much
Efficiency.
Brief description
Fig. 1 be the utility model proposes a kind of polysilicon chip of high conversion structural representation.
In figure：Reflectance coating 4 between silicon chip body 1, V-shaped groove 2, silicon nitride passive film 3, silicon nitride, silicon oxide antireflective coating 5,
Anelectrode 6, back of the body electric field 7, back electrode 8.
Specific embodiment
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely description is it is clear that described embodiment is only a part of embodiment of this utility model rather than whole
Embodiment.
With reference to Fig. 1, a kind of polysilicon chip of high conversion, including silicon chip body 1, the upper surface of silicon chip body 1 equidistantly sets
There is V-shaped groove 2, and making herbs into wool layer be etched with V-shaped groove 2, V-shaped groove can strengthen the absorption to sunlight, improve order of reflection, it is to avoid
Because on silicon chip body matte flat smooth and make the problem of reflection optical losses, thus improve electric energy conversion, making herbs into wool layer sinks successively
Long-pending have silicon nitride passive film 3, silicon nitride anti-reflecting film 4 and silicon oxide antireflective coating 5, and silicon oxide antireflective coating 5 is just provided with
Electrode 6, silicon nitride passive film, silicon nitride anti-reflecting film and three layers of silicon oxide antireflective coating are successively set on silicon chip body, not only
There is more preferably anti-reflective effect, and enhance the passivation effect on surface, electric transformation efficiency is high.
The lower surface of silicon chip body 1 is provided with back of the body electric field 7, and back of the body electric field 7 is provided with and carries on the back the back electrode 8 that electric field 7 electrically connects,
Back of the body electric field can improve transformation efficiency more fully using carrying out photoelectric conversion by light very much, silicon chip body 1 and back of the body electric field 7 it
Between be additionally provided with P+ layer, P+ layer be used for auxiliary to luminous energy electricity conversion, make changing effect good, improve electric energy conversion ratio, silicon chip body 1
Lower surface be provided with and be all enclosed with butadiene rubber layer on anticorrosive coat, and four corners of silicon chip body 1, anticorrosive coat can prevent silicon chip
The oxidation of body 1, service life is longer, and on four corners of silicon chip body 1, the butadiene rubber layer of parcel is readily transported and installs,
Reduce spoilage.
The above, only this utility model preferably specific embodiment, but protection domain of the present utility model is not
Be confined to this, any those familiar with the art in the technical scope that this utility model discloses, according to this practicality
New technical scheme and its utility model design in addition equivalent or change, all should cover in protection model of the present utility model
Within enclosing.
Claims (3)
1. a kind of polysilicon chip of high conversion, including silicon chip body（1）It is characterised in that described silicon chip body（1）Upper table
Face is equidistantly provided with V-shaped groove（2）, and described V-shaped groove（2）On be etched with making herbs into wool layer, described making herbs into wool layer has been sequentially depositing silicon nitride
Passivating film（3）, silicon nitride anti-reflecting film（4）With silicon oxide antireflective coating（5）, and described silicon oxide antireflective coating（5）It is provided with
Anelectrode（6）, described silicon chip body（1）Lower surface be provided with back of the body electric field（7）, and described back of the body electric field（7）It is provided with and carry on the back electric field
（7）The back electrode of electrical connection（8）.
2. a kind of polysilicon chip of high conversion according to claim 1 is it is characterised in that described silicon chip body（1）With
Back of the body electric field（7）Between be additionally provided with P+ layer.
3. a kind of polysilicon chip of high conversion according to claim 1 is it is characterised in that described silicon chip body（1）'s
Lower surface is provided with anticorrosive coat, and described silicon chip body（1）Four corners on be all enclosed with butadiene rubber layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621021282.4U CN205985020U (en) | 2016-08-30 | 2016-08-30 | Polycrystal silicon chip of high conversion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621021282.4U CN205985020U (en) | 2016-08-30 | 2016-08-30 | Polycrystal silicon chip of high conversion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205985020U true CN205985020U (en) | 2017-02-22 |
Family
ID=58039298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621021282.4U Expired - Fee Related CN205985020U (en) | 2016-08-30 | 2016-08-30 | Polycrystal silicon chip of high conversion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205985020U (en) |
-
2016
- 2016-08-30 CN CN201621021282.4U patent/CN205985020U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170222 Termination date: 20200830 |