CN205940760U - Terahertz detection device - Google Patents
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- CN205940760U CN205940760U CN201620659507.2U CN201620659507U CN205940760U CN 205940760 U CN205940760 U CN 205940760U CN 201620659507 U CN201620659507 U CN 201620659507U CN 205940760 U CN205940760 U CN 205940760U
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Abstract
The utility model relates to a terahertz detection device for survey the terahertz wave signal that the femto second laser radiation produced, be in including PCB board and setting photoconductive module, response adjusting module and enlarged module on the PCB board. Above -mentioned terahertz detection device, with photoconductive module, response adjusting module and enlarged module holding in same device for the photoconduction module is close to with enlarged module each other, has increased matched resistance, electric capacity and electric charge release resistance, make terahertz detection device's response time reach the minimum through the adjustment and response module simultaneously, eliminate and restrained the transmission and the coupling of noise, realized the maximize of SNR and sample rate. Reduce this terahertz detection device's volume simultaneously, practiced thrift the cost.
Description
Technical field
This utility model is related to terahertz detection technical field, more particularly to terahertz detection device.
Background technology
THz wave (THz ripple) refers to electromagnetic wave between 0.1～10THz for the frequency, and the wavelength of THz wave is short, do not have
Ionizing radiation produces, and further comprises abundant spectral information simultaneously, can be used for differentiating material classification and composition.Terahertz Technology
Have great application prospect in fields such as medical treatment, food, safety monitoring, military affairs.
With the continuous progress of ultrafast laser technique, THz wave is using femtosecond laser vitalizing semiconductor surface and utilization
Photoconductive transmitter receiver system is produced and is detected.Wherein, terahertz light photoconductive detector be by semi-conducting material above
Photoconducting antenna coupling terahertz electromagnetic wave, formed carrier high-speed motion, thus producing immediate current.In terahertz detection dress
In putting, the timeconstantτ of circuit collection can represent Terahertz waveform detection device output signal with the THz wave change injected
Speed, such as when incident THz wave irradiates suddenly and disappears, the output of detector will not reach at once maximum or under
It is down to zero, but the difference of constant, τ assumes corresponding slow raising and lowering over time.System equivalent time constant τ reacts
The response time of device and dynamic characteristic.But, when terahertz signal is weaker or the light intensity illumination of photoconductor is very low,
The noise current of the formation such as the input current noise of amplification module, shot noise, Johnson noise and coupled noise electric current, by height
In actual current produced by THz wave.Meanwhile, the impedance of amplifier and the impedance mismatch of photoconductive antenna also can reduce
The to-noise ratio of device.
Utility model content
Based on this it is necessary to be directed to the problems referred to above, provide a kind of by photoelectricity guide module, response regulation module and amplification module
It is integrated on same pcb board, eliminate and suppress transmission and the coupling of noise, improve the terahertz detection device of signal to noise ratio simultaneously.
A kind of terahertz detection device, for detect femtosecond laser radiation produce terahertz wave signal, including pcb board with
And it is arranged on photoelectricity guide module on described pcb board, response regulation module and amplification module,
Described photoelectricity guide module, response regulation module, amplification module are sequentially connected electrically；
Described photoelectricity guide module is used for receiving femtosecond laser and the THz wave of outside simultaneously, and forms described THz wave
The potential difference of signal；
Described amplification module is used for receiving and amplify described terahertz wave signal；
Described response regulation adjustment module is used for adjusting the signal to noise ratio between described photoelectricity guide module and described amplification module.
Wherein in an embodiment, substrate layer that described photoelectricity guide module includes stacking gradually, photoconductive layer, photoconduction
Grid and be arranged on described photoconduction grid on ambipolar dipole antenna；
Described ambipolar dipole antenna includes positive pole dipole antenna and negative pole dipole antenna；
Described response regulation module is connected with described positive pole dipole antenna, negative pole dipole antenna respectively.
Wherein in an embodiment, described response regulation module includes first resistor and the first electric capacity；Described first electricity
Resistance is in parallel with the first electric capacity；
One end of described first resistor is connected with described positive pole dipole antenna, and the other end of described first resistor is negative with described
Pole dipole antenna connects.
Wherein in an embodiment, the equivalent resistance phase of the resistance of described first resistor and described ambipolar dipole antenna
Deng.
Wherein in an embodiment, described amplification module includes first order amplifying circuit, second level amplifying circuit and
Three-stage amplifier；
Described first order amplifying circuit, second level amplifying circuit, third level amplifying circuit are sequentially connected electrically；
Described first order amplifying circuit is used for described terahertz wave signal is amplified；
Described second level amplifying circuit is used for adjusting the gain amplifier of described terahertz wave signal；
Described third level amplifying circuit is used for reducing the output impedance of described terahertz detection device.
Wherein in an embodiment, described first order amplifying circuit includes the first coupling resistance and instrument amplifier；
The two ends of described first coupling resistance are connected with described positive pole dipole antenna, negative pole dipole antenna respectively；
The in-phase input end of described instrument amplifier is connected with described positive pole dipole antenna, described instrument amplifier anti-phase
Input is connected with described negative pole dipole antenna；The outfan of described instrument amplifier is connected with described second level amplifying circuit.
Wherein in an embodiment, described first order amplifying circuit also includes second resistance and 3rd resistor, and described
Second resistance is equal with the resistance of 3rd resistor；
One end of described second resistance is connected with described positive pole dipole antenna, the other end ground connection of described second resistance；Institute
The one end stating 3rd resistor is connected with described negative pole dipole antenna, the other end ground connection of described 3rd resistor.
Wherein in an embodiment, described second level amplifying circuit include the second coupling resistance, the first operational amplifier,
Digital regulation resistance and bias voltage potentiometer；
The inverting input of described first operational amplifier is through described second coupling resistance and described first order amplifying circuit
Outfan connect；The in-phase input end of described first operational amplifier is connected with described bias voltage potentiometer；
Described digital regulation resistance is connected between inverting input and the outfan of described first operational amplifier；
The outfan of described first operational amplifier is connected with described third level amplifying circuit.
Wherein in an embodiment, described bias voltage potentiometer includes the 4th resistance, the 5th resistance and the 6th resistance；
Described 4th resistance, the 5th resistance and the 6th resistance and externally fed power supply are sequentially connected in series formation loop, and described
5th resistance is slide rheostat,
The in-phase input end of described first operational amplifier is connected with described 5th resistance.
Wherein in an embodiment, described third level amplifying circuit includes the 3rd coupling resistance and voltage follower；
The in-phase input end of described voltage follower is defeated through described 3rd coupling resistance and described second level amplifying circuit
Go out end to connect, the negative input of described voltage follower is connected with the outfan of described voltage follower.
Above-mentioned terahertz detection device, photoelectricity guide module, response regulation module and amplification module are integrated in same pcb board
On, be placed in same device so that photoelectricity guide module is close to each other with amplification module, increased build-out resistor, electric capacity and
Charge bleed resistor, makes the response time of device reach minimum, eliminate simultaneously and inhibit the transmission of noise and coupling it is achieved that
The maximization of noise when sample rate.Reduce the volume of this terahertz detection device simultaneously, save cost.
Brief description
Fig. 1 is terahertz detection apparatus structure frame diagram；
Fig. 2 is the structural representation of photoelectricity guide module；
Fig. 3 is the equivalent circuit diagram of instrument amplifier；
Fig. 4 is the circuit diagram of amplification module.
Specific embodiment
For the ease of understanding this utility model, below with reference to relevant drawings, this utility model is more fully retouched
State.Preferred embodiment of the present utility model is given in accompanying drawing.But, this utility model can come real in many different forms
Existing however it is not limited to embodiment described herein.On the contrary, providing the purpose of these embodiments to be to make to public affairs of the present utility model
The understanding opening content is more thoroughly comprehensive.
Unless otherwise defined, all of technology used herein and scientific terminology are led with belonging to technology of the present utility model
The implication that the technical staff in domain is generally understood that is identical.In term used in the description of the present utility model it is simply herein
The purpose of description specific embodiment is it is not intended that limit this utility model.Term as used herein "and/or" includes one
The arbitrary and all of combination of individual or multiple related Listed Items.
As shown in Figure 1 for terahertz detection apparatus structure frame diagram, for detecting the terahertz that femtosecond laser radiation produces
Hereby ripple signal, including pcb board (not shown) and be arranged on photoelectricity guide module 100 on pcb board, response regulation module 200
With amplification module 300.Wherein, photoelectricity guide module 100, response regulation module 200, amplification module 300 are sequentially connected electrically；Photoconduction
Module 100 is used for receiving femtosecond laser and the THz wave of outside simultaneously, and forms the potential difference of terahertz wave signal；Amplify mould
Block 300 is used for receiving and amplify described terahertz wave signal；Response regulation adjustment module is used for adjusting photoelectricity guide module 100 and putting
Signal to noise ratio between big module 300.
Structural representation for photoelectricity guide module 100 as shown in Figure 2, photoelectricity guide module 100 includes the lining stacking gradually
Bottom 110, photoconductive layer 120, photoconductive grid 130 and be arranged on the ambipolar dipole antenna 140 on photoconductive grid.Its
In, substrate layer 110 is semi-insulating GaAs (SI-GaAs)；Photoconductive layer 120 is made up of low-temperature-grown GaAs (LT-GaAs),
The material of ambipolar dipole antenna 140 is semi-insulating GaAs (SI-GaAs).
Ambipolar dipole antenna 140 includes positive pole dipole antenna 141 and negative pole dipole antenna 143.Positive pole dipole antenna 141
Do not limited by positive pole dipole antenna 141 and negative pole dipole antenna 143 position with the polarity of the electric charge of negative pole dipole antenna 143,
That is the position of positive pole dipole antenna 141 and negative pole dipole antenna 143 can exchange.Response regulation module 200 is arranged on
Positive pole dipole antenna 141 and the two ends of negative pole dipole antenna 143.
When the photoelectricity guide module 100 in terahertz detection device is subject to femtosecond laser and Terahertz incidence wave to irradiate simultaneously
Afterwards, the pole from ambipolar dipole antenna 140 is flowed to another pole by electric charge, between the positive and negative polarities of ambipolar dipole antenna 140
Produce Terahertz potential difference, wherein, the current impulse of equivalent terahertz wave signal is directly proportional to produced Terahertz electromotive force；
The current impulse of equivalent terahertz wave signal and the inversely proportional relation of positive and negative polarities equivalent resistance of ambipolar dipole antenna.
With reference to Fig. 1, amplification module 300 includes first order amplifying circuit 310, second level amplifying circuit 320 and the third level and puts
Big circuit 330.First order amplifying circuit 310, second level amplifying circuit 320, third level amplifying circuit 330 are sequentially connected electrically.The
One-level amplifying circuit 310 is used for terahertz wave signal is fixed with the amplification of gain factor.Second level amplifying circuit 320 is used for
Adjust the gain amplifier of terahertz wave signal.Third level amplifying circuit 330 is used for reducing the output impedance of terahertz detection device.
Wherein, first order amplifying circuit 310 includes the first coupling resistance R1 ' and instrument amplifier U1.First coupling resistance
The two ends of R1 ' are connected with positive pole dipole antenna 141, negative pole dipole antenna 143 respectively.First coupling resistance R1 ' is used for coupling dress
Trace resistances in putting.
The in-phase input end of instrument amplifier U1 is connected with positive pole dipole antenna 141, the anti-phase input of instrument amplifier U1
End is connected with negative pole dipole antenna 143；The outfan of instrument amplifier U1 is connected with second level amplifying circuit 320.
It is illustrated in figure 3 the equivalent circuit diagram of instrument amplifier, wherein, the Differential Input time constant of instrument amplifier U1
τDIFFAs shown in formula (1)：
The common mode input time constant τ of instrument amplifier U1CMAs shown in formula (2)：
τCM=RIN+·CCM+=RIN·CCM(2)
The difference bandwidth BW of instrument amplifier U1DIFFAs shown in formula (3)：
In above-mentioned formula, CCM+Homophase input common mode capacitance for instrument amplifier U1；CCM-Anti- for instrument amplifier U1
Mutually input common mode capacitance；CDIFFDifference-mode input electric capacity for instrument amplifier U1.CCM+、CCM-、CDIFFTogether form instrument to amplify
The equivalent input capacitance C of device U1IN, equivalent input capacitance CINRepresentative value be 1～20pF.RIN+Defeated for instrument amplifier U1 front end
Enter to the cabling equivalent resistance of amplifier in-phase input end, RIN+Input to amplifier anti-phase input for instrument amplifier U1 front end
The cabling equivalent resistance at end.
In amplifier application circuit, anti-phase input common mode capacitance CCM-Will be in the closed loop of instrument amplifier U1
Introduce a limit, under some specific conditions, first order amplifying circuit 310 self-excitation or unstable may be caused.The first order
The input capacitance of amplifying circuit 310 is not only made up of the input capacitance of instrument amplifier U1, also includes the stray electrical of wiring lead
Appearance, the pin capacitance of encapsulation, coupled capacitor.In the present embodiment, by the ground connection around the inverting input of instrument amplifier U1
Layer removes, and meanwhile, so that lead is connected as far as possible short, thus farthest reducing stray capacitance, the product of pin capacitance coupled capacitor
Raw.
With reference to Fig. 1, the resistance R in photoelectricity guide module 100PTEquivalent resistance R for photoconductive gridPT, electric capacity CAFor bipolar
Equivalent capacity C of type dipole antenna 140A.Wherein, equivalent resistance RPT, equivalent capacity CAIt is the intrinsic of ambipolar dipole antenna 140
Characteristic, is limited by technique and material, relevant with photoconductive structure fabrication.In the present embodiment, equivalent resistance RPTResistance about
For 107Ohm, equivalent capacity CAThe stationary value of capacitance be about 0.5pF, equivalent capacity CACapacitance 0.3～0.7pF it
Between fluctuate.In other embodiments, its equivalent resistance RPTResistance, equivalent capacity CACapacitance by ambipolar dipole antenna
140 processing technology and material behavior are determined.
Photoelectricity guide module 100 is connected with first order amplifying circuit 310 by response regulation module 200.Assume that Terahertz is visited
Survey the total time constant, τ of devicereceiver, its total time constant, τreceiverCommon by photoelectricity guide module 100 and amplification module 300
Determine, that is, photoelectricity guide module 100 and the response speed of first order amplifying circuit 310 have total time constant, τreceiverTo determine.Always
TimeconstantτreceiverIt is by total equivalent resistance RreceiverWith total equivalent capacity CreceiverTogether decide on.Wherein, ambipolar idol
Equivalent capacity C of pole antenna 40AWith equivalent resistance RPTIt is particular value, by the processing technology of ambipolar dipole antenna 40 and material
Impact.The equivalent input capacitance C of instrument amplifier U1IN, the equivalent inpnt resistance R of instrument amplifier U1INBy RIN1、RIN2、RIN3
Determine.Its equivalent input capacitance CIN, equivalent inpnt resistance RINFor the build-in attribute of instrument amplifier U1, also for particular value.At this
In embodiment, model INA115 of instrument amplifier U1, equivalent inpnt resistance RINResistance typically 1011～1012Ω it
Between.
Response regulation module 200 includes first resistor R1 and the first electric capacity C1.First resistor R1 is in parallel with the first electric capacity C1；
One end of first resistor R1 is connected with positive pole dipole antenna 141, and the other end of first resistor R1 is with negative pole dipole antenna 143 even
Connect.
Due to being provided with response regulation module 200, total equivalent resistance R of its devicereceiverAs shown in formula (4)：
Rreceiver=RPT//R1//RIN(4)
Total equivalent capacity CreceiverAs shown in formula (5)：
Creceiver=CA+C1+CIN(5)
Total time constant, τreceiverAs shown in formula (6)：
τreceiver=Rreceiver·Creceiver(6)
In high speed acquisition circuit, total time constant, τreceiverThe smaller the better, then this device is to the response of input signal just
Can be faster.By formula (6) as can be seen that can pass through to reduce total equivalent resistance RreceiverWith total equivalent capacity CreceiverCome
Reduce total time constant, τreceiver.
Equivalent capacity C due to ambipolar dipole antenna 140ALimited by technique and material, with photoconductive structure fabrication
Relevant, equivalent capacity CACapacitance between 0.3～0.7pF.And the first electric capacity C1 can be by will be integrated for instrument amplifier U1
On ambipolar dipole antenna 140 or close proximity to ambipolar dipole antenna 140, and then the length of minimizing signal lead, permissible
Eliminate stray capacitance, the formation of coupled capacitor, you can obtain minimum capacity.In the present embodiment, the capacitance of the first electric capacity C1
In the range of 0.4～5pF, in other embodiments, the capacitance of the first electric capacity C1 can be according to specific terahertz detection
The design of each part of device is determining however it is not limited to the scope that is given of the present embodiment.
In the present embodiment, the equivalent inpnt resistance R of instrument amplifier U1INResistance be 1011～1012Ω, ambipolar idol
The equivalent resistance R of pole antenna 140PTResistance be about 107Ohm, the equivalent inpnt resistance R of instrument amplifier U1INIt is far longer than light
The equivalent resistance R of conductance gridPT.If first resistor R1 is far longer than the equivalent inpnt resistance R of instrument amplifier U1INWith bipolar
The equivalent resistance R of type dipole antenna 140PT, then formula (6) can approximate expression (7)：
τreceiver=RPT·(CA+C1+CIN) (7)
From formula (7), by adjusting technique and the material of ambipolar dipole antenna 140, the optimized time can be obtained
Constant.But the optimization realizing response in actual applications by changing ambipolar dipole antenna 140 is that have certain difficulty, but
Can be by adjusting first resistor R1 to optimize total time constant, τreceiverIf, R1<RPTAnd R1<RIN, then total time constant
τreceiver, an accepted way of doing sth (8) can be optimized：
τreceiver=R1 (CA+C1+CIN) (8)
From formula (8), total time constant, τ can be adjusted by adjusting the first electric capacity C1 and first resistor R1receiver,
Make the response time of device reach minimum, eliminate simultaneously and inhibit transmission and the coupling of noise, realize noise when sample rate
Maximization, lifting terahertz detection device performance.
In another embodiment, the resistance of first resistor R1 and the equivalent resistance R of ambipolar dipole antenna can also be madePTPhase
Deng.As the resistance of first resistor R1 and the equivalent resistance R of ambipolar dipole antenna 420PTWhen equal, its total time constant
τreceiverLess, overall response speed.
First order amplifying circuit 310 also includes second resistance R2 and 3rd resistor R3, and second resistance R2 and 3rd resistor
The resistance of R3 is equal.One end of second resistance R2 is connected with positive pole dipole antenna 141, the other end ground connection of second resistance R2；The
One end of three resistance R3 is connected with negative pole dipole antenna 143, the other end ground connection of 3rd resistor R3.Terahertz detection device is being visited
Survey in sampling process, the voltage relatively produced by ambipolar dipole antenna 140 sensing THz wave on photoconductive grid 130 can
Can exceed the common-mode input voltage range of instrument amplifier U1, by arranging second resistance R2 and 3rd resistor R3, be bipolar
The electric charge of type dipole antenna 140 accumulation provides bleed-off circuit, the performance to first order amplifying circuit 310 and noise inhibiting ability
Would not interfere or affect.Meanwhile, the resistance of second resistance R2 and 3rd resistor R3 is equal, and is far longer than ambipolar idol
The equivalent resistance R of pole antenna 140PT, also can optimize overall response speed to a certain extent.
Instrument amplifier U1 passes through feedback resistor RF, feedback resistor RFIt is connected to two feedbacks of instrument amplifier U1
Between end.The scope of the gain amplifier of instrument amplifier U1 is 100～10000, by arranging feedback resistor RFInstrument is made to put
Big device U1 has higher input resistance, during detecting, can detect low intensive terahertz wave signal, simultaneously this instrument
Table amplifier U1 has high cmrr it is ensured that the integrity of terahertz wave signal.
If Fig. 4 is the circuit diagram of amplification module, second level amplifying circuit 320 includes the second coupling resistance R2 ', the first computing
Amplifier U2, digital regulation resistance U3 and bias voltage potentiometer 321.The inverting input of the first operational amplifier U2 is through the second coupling
Close resistance R2 ' to be connected with the outfan of first order amplifying circuit 310；The in-phase input end of the first operational amplifier U2 and biased electrical
Pressure potentiometer 321 connects.Digital regulation resistance U3 is connected between inverting input and the outfan of the first operational amplifier U2；The
The outfan of one operational amplifier U2 is connected with third level amplifying circuit.
Terahertz wave signal through first order amplifying circuit 310 output is coupled to the second level by the second coupling resistance R2 '
The inverting input of the first operational amplifier U2 of amplifying circuit 320, simultaneously in the in-phase input end of the first operational amplifier U2
Connect bias voltage potentiometer 321, this bias voltage potentiometer 321 includes the 4th resistance R4, the 5th resistance R5 and the 6th resistance
R6.4th resistance R4, the 5th resistance R5 and the 6th resistance R6 and externally fed power supply are sequentially connected in series formation loop, and the 5th resistance
R5 is slide rheostat, and the in-phase input end of the first operational amplifier U2 is connected with the 5th resistance R5.In the present embodiment, outside
Power supply is 5 volts of DC source, and its 4th resistance R4 is connected with the positive pole of DC source, the 6th resistance R6 and DC source
Negative pole connect.Output signal can be raised to more than no-voltage by this bias voltage potentiometer 321.
The feedback circuit of second level amplifying circuit 320 is made up of digital regulation resistance U3, according to the power of terahertz wave signal
Adjust the resistance of digital regulation resistance U3, first order amplifying circuit 310 and second level amplifying circuit 320 overall gain amplification can be made
Fluctuation in the range of 100～10000 is that is to say, that collaborative by first order amplifying circuit 310 and second level amplifying circuit 320
Effect, the gain amplifier that can make whole device is in the range of 100～10000.
Third level amplifying circuit 330 includes the 3rd coupling resistance R3 ' and voltage follower U4.The homophase of voltage follower U4
Input is connected with the outfan of second level amplifying circuit 320 through described 3rd coupling resistance R3 ', the negative sense of voltage follower U4
Input is connected with the outfan of voltage follower U4.
Signal through second level amplifying circuit 320 output is coupled to third level amplifying circuit 330 through the 3rd coupling resistance R3 '
Voltage follower U4 in-phase input end, reduce the output impedance of device, also play simultaneously isolation subsequent conditioning circuit work
With decreasing the impact to amplification module 300 for the subsequent A/D change-over circuit.First order amplifying circuit 310, the second level are amplified
Circuit 320 and third level amplifying circuit 330 all meet the demand of time constant, so that the response effect of terahertz detection device is reached
Optimum state.
The operation principle of terahertz detection device：When the photoelectricity guide module 100 in terahertz detection device is subject to femtosecond to swash
After light and Terahertz incidence wave irradiate simultaneously, the pole from ambipolar dipole antenna 140 is flowed to another pole, ambipolar idol by electric charge
Terahertz potential difference is produced between the positive and negative polarities of pole antenna 140.The positive and negative polarities of ambipolar dipole antenna are respectively connected to instrument
The homophase of amplifier U1 and inverting input carry out first order amplification, then enter line level lifting and the second level is amplified.The second level
The gain of amplifying circuit 320 can be strong and weak according to THz wave, carries out adjustable gain amplification using digital regulation resistance U3.The third level is put
Big circuit 330 has the effect of insulation blocking to whole device.
Photoelectricity guide module 100, governing response module 200, amplification module 300 are integrated on same pcb board, are contained in same
In one device, increased build-out resistor, electric capacity and charge bleed resistor, make the response time of this device optimum, eliminate and suppress
The transmission of noise and coupling, it is achieved that the maximization of noise when sample rate, reduce this terahertz detection device simultaneously
Volume, has saved cost.By arranging multistage amplifier circuit, make the sensitivity of terahertz detection device, bandwidth, response time,
Dynamic characteristic and signal-to-noise performance are obtained for and are substantially improved.
Each technical characteristic of embodiment described above can arbitrarily be combined, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic applied in example is all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope of this specification record.
Embodiment described above only have expressed several embodiments of the present utility model, and its description is more concrete and detailed,
But therefore can not be interpreted as the restriction to utility model patent scope.It should be pointed out that the common skill for this area
For art personnel, without departing from the concept of the premise utility, some deformation can also be made and improve, these broadly fall into
Protection domain of the present utility model.Therefore, the protection domain of this utility model patent should be defined by claims.
Claims (10)
1. a kind of terahertz detection device, for detecting the terahertz wave signal of femtosecond laser radiation generation it is characterised in that wrapping
Include pcb board and be arranged on photoelectricity guide module on described pcb board, response regulation module and amplification module,
Described photoelectricity guide module, response regulation module, amplification module are sequentially connected electrically；
Described photoelectricity guide module is used for receiving femtosecond laser and the THz wave of outside simultaneously, and forms described terahertz wave signal
Potential difference；
Described amplification module is used for receiving and amplify described terahertz wave signal；
Described response regulation module is used for adjusting the signal to noise ratio between described photoelectricity guide module and described amplification module.
2. terahertz detection device according to claim 1 is it is characterised in that described photoelectricity guide module includes stacking gradually
Substrate layer, photoconductive layer, photoconductive grid and be arranged on the ambipolar dipole antenna on described photoconduction grid；
Described ambipolar dipole antenna includes positive pole dipole antenna and negative pole dipole antenna；
Described response regulation module is connected with described positive pole dipole antenna, negative pole dipole antenna respectively.
3. terahertz detection device according to claim 2 is it is characterised in that described response regulation module includes the first electricity
Resistance and the first electric capacity；Described first resistor is in parallel with the first electric capacity；
One end of described first resistor is connected with described positive pole dipole antenna, and the other end of described first resistor is even with described negative pole
Pole antenna connects.
4. terahertz detection device according to claim 3 is it is characterised in that the resistance of described first resistor is double with described
The equivalent resistance of polar form dipole antenna is equal.
5. terahertz detection device according to claim 2 is it is characterised in that described amplification module includes first order amplification
Circuit, second level amplifying circuit and third level amplifying circuit；
Described first order amplifying circuit, second level amplifying circuit, third level amplifying circuit are sequentially connected electrically；
Described first order amplifying circuit is used for described terahertz wave signal is amplified；
Described second level amplifying circuit is used for adjusting the gain amplifier of described terahertz wave signal；
Described third level amplifying circuit is used for reducing the output impedance of described terahertz detection device.
6. terahertz detection device according to claim 5 is it is characterised in that described first order amplifying circuit includes first
Coupling resistance and instrument amplifier；
The two ends of described first coupling resistance are connected with described positive pole dipole antenna, negative pole dipole antenna respectively；
The in-phase input end of described instrument amplifier is connected with described positive pole dipole antenna, the anti-phase input of described instrument amplifier
End is connected with described negative pole dipole antenna；The outfan of described instrument amplifier is connected with described second level amplifying circuit.
7. terahertz detection device according to claim 5 is it is characterised in that described first order amplifying circuit also includes
Two resistance and 3rd resistor, and described second resistance is equal with the resistance of 3rd resistor；
One end of described second resistance is connected with described positive pole dipole antenna, the other end ground connection of described second resistance；Described
One end of three resistance is connected with described negative pole dipole antenna, the other end ground connection of described 3rd resistor.
8. terahertz detection device according to claim 5 is it is characterised in that described second level amplifying circuit includes second
Coupling resistance, the first operational amplifier, digital regulation resistance and bias voltage potentiometer；
The inverting input of described first operational amplifier is defeated through described second coupling resistance and described first order amplifying circuit
Go out end to connect；The in-phase input end of described first operational amplifier is connected with described bias voltage potentiometer；
Described digital regulation resistance is connected between inverting input and the outfan of described first operational amplifier；
The outfan of described first operational amplifier is connected with described third level amplifying circuit.
9. terahertz detection device according to claim 8 is it is characterised in that described bias voltage potentiometer includes the 4th
Resistance, the 5th resistance and the 6th resistance；
Described 4th resistance, the 5th resistance and the 6th resistance and externally fed power supply are sequentially connected in series formation loop, and the described 5th
Resistance is slide rheostat,
The in-phase input end of described first operational amplifier is connected with described 5th resistance.
10. terahertz detection device according to claim 5 is it is characterised in that described third level amplifying circuit includes
Three coupling resistances and voltage follower；
The outfan through described 3rd coupling resistance and described second level amplifying circuit for the in-phase input end of described voltage follower
Connect, the negative input of described voltage follower is connected with the outfan of described voltage follower.
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| CN201620659507.2U CN205940760U (en) | 2016-06-28 | 2016-06-28 | Terahertz detection device |
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| CN201620659507.2U CN205940760U (en) | 2016-06-28 | 2016-06-28 | Terahertz detection device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105938012A (en) * | 2016-06-28 | 2016-09-14 | 深圳市太赫兹系统设备有限公司 | Terahertz detection device |
| CN109950696A (en) * | 2018-04-25 | 2019-06-28 | 京东方科技集团股份有限公司 | Rectifying antenna |
| CN116519626A (en) * | 2023-06-25 | 2023-08-01 | 中国工程物理研究院流体物理研究所 | Signal detection circuit and system for terahertz spectrum and imaging measurement system |
-
2016
- 2016-06-28 CN CN201620659507.2U patent/CN205940760U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105938012A (en) * | 2016-06-28 | 2016-09-14 | 深圳市太赫兹系统设备有限公司 | Terahertz detection device |
| CN105938012B (en) * | 2016-06-28 | 2018-03-27 | 深圳市太赫兹系统设备有限公司 | Terahertz detection device |
| CN109950696A (en) * | 2018-04-25 | 2019-06-28 | 京东方科技集团股份有限公司 | Rectifying antenna |
| CN116519626A (en) * | 2023-06-25 | 2023-08-01 | 中国工程物理研究院流体物理研究所 | Signal detection circuit and system for terahertz spectrum and imaging measurement system |
| CN116519626B (en) * | 2023-06-25 | 2023-09-19 | 中国工程物理研究院流体物理研究所 | Signal detection circuit and system for terahertz spectrum and imaging measurement system |
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Effective date of registration: 20170221 Address after: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Patentee after: SHENZHEN TERAHERTZ SYSTEM EQUIPMENT Co.,Ltd. Patentee after: SHENZHEN THZ SCIENCE AND TECHNOLOGY INNOVATION INSTITUTE Address before: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Patentee before: SHENZHEN TERAHERTZ SYSTEM EQUIPMENT Co.,Ltd. |
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