CN102680091A - High-speed detection method and device for terahertz - Google Patents
High-speed detection method and device for terahertz Download PDFInfo
- Publication number
- CN102680091A CN102680091A CN2012101930333A CN201210193033A CN102680091A CN 102680091 A CN102680091 A CN 102680091A CN 2012101930333 A CN2012101930333 A CN 2012101930333A CN 201210193033 A CN201210193033 A CN 201210193033A CN 102680091 A CN102680091 A CN 102680091A
- Authority
- CN
- China
- Prior art keywords
- quantum well
- operational amplifier
- signal
- well detector
- terahertz quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
The invention provides a high-speed detection method and device for terahertz. The high-speed detection device comprises a THzQWP (THz Quantum Well Photodetector) for directly carrying out strength detection on the terahertz and a trans-impedance amplifying circuit for supplying a bias voltage to the THzQWP and converting light current generated by the THzQWP into voltage signals. For conveniently designing the parameters of the trans-impedance amplifying circuit, the invention provides a small-signal lumped electrical model of the THzQWP. The small-signal lumped electrical model is formed by connecting a capacitor Cq with a bypass differential resistor Rd and a light current source Is in parallel. The trans-impedance amplifying circuit comprises an operational amplifier, a compensation capacitor CF and a trans-resistor RF; the inverse-phase input end of the operational amplifier is connected with one end of the THzQWP; the non-inverting input end of the operational amplifier is connected with the bias voltage; the trans-resistor RF is connected with the output end and the inverse-phase input end of the operational amplifier; the compensation capacitor is connected in parallel with the trans-resistor; and the other end of the THzQWP is connected with the ground. The high-speed detection device provided by the invention can supply the very low working bias voltage for the THzQWP, and converts the light current signals of the THzQWP to the voltage signals simultaneously, so that the follow-up circuit link treatment is facilitated.
Description
Technical field
The invention belongs to the semiconductor photoelectric device technical field, relate to a kind of THz wave detection method and device, relate in particular to a kind of high-speed inspection method and device of THz wave.
Background technology
THz wave is meant frequency from 100GHz-10THz, the electromagnetic wave of frequency between millimeter wave and infrared light.Because THz wave self, it has broad application prospects at aspects such as high-speed communication, imaging, spectrum analysis and remote sensing.For the direct detection of the above THz wave of 1THz, traditional method and apparatus has silicon bolometer, pyroelectricity detector and Golay cells (Gao Lai) detector.These methods all are based on the detection of thermal response, and response speed is not high.
All solid state THz semiconductor quantum well detector (the THz Quantum Well Photodetector that developed in recent years; THzQWP) be a kind of important arrowband detector; Compare with other wideband detectors and to have good spectral analysis capabilities and very fast response speed, survey especially at focal plane arrays (FPA) in high sensitivity and high resolving power and have unique advantage aspect preparing; In addition, advantage such as it also possesses technical maturity, volume is little and easy of integration can be used for the high speed direct detection of the above THz wave of 1THz.At present mainly contain two kinds of photoconduction type and photovoltaic types based on the quantum well detector of GaAs/AlGaAs material system.
To the application of THz semiconductor quantum well detector, mainly be to utilize existing electricity instrument and equipment at present, be unfavorable for the miniaturization and the practicability of sniffer.For the photo-detector circuit of traditional guide type, the general mode of series connection that adopts provides bias voltage, perhaps adopts existing trans-impedance amplifier integrated circuit chip to photodetector.But THz semiconductor quantum well detector has the characteristics of himself, and the bias voltage of its work is very low, and generally at 30-60mV, the electric capacity of self is also in pF magnitude even bigger.Traditional method or chip or the bandwidth that provides are all very limited; In tens kHz scopes; Satisfied not THz semiconductor quantum well detector operation bias voltage, so aspect the miniaturized high-speed detection circuit of THz QWP, still do not have effective solution at present.
Summary of the invention
The shortcoming of prior art in view of the above the object of the present invention is to provide a kind of high-speed inspection method and device of THz wave, and this method and apparatus can carry out high speed to THz wave and directly survey.
For realizing above-mentioned purpose and other relevant purposes, the present invention provides a kind of high-speed inspection method and device of THz wave.
A kind of high-speed inspection device of THz wave, the high-speed inspection device of said THz wave comprise the Terahertz quantum well detector at least and stride the resistance amplifying circuit; Said Terahertz quantum well detector comprises one in order to conveniently to stride the small-signal lump electrical model of the parameter designing that hinders amplifying circuit in order to THz wave is carried out direct strength investigation, and said small-signal lump electrical model is by capacitor C
qParallel connection bypass differential resistor R
dConstitute with photocurrent source Is; The said resistance amplifying circuit of striding is with thinking that the Terahertz quantum well detector provides bias voltage, and the photo-signal that the Terahertz quantum well detector is exported is converted into voltage signal; Comprise operational amplifier, building-out capacitor C
FHinder R with striding
FThe inverting input of said operational amplifier links to each other with an end of Terahertz quantum well detector, and the in-phase input end of operational amplifier connects bias voltage; Said stride the resistance be connected between the output terminal and reverse input end of operational amplifier; Said building-out capacitor with said stride the resistance parallelly connected; The other end ground connection of said Terahertz quantum well detector; Said building-out capacitor
C
TBe the inverting input total capacitance of operational amplifier, its value is capacitor C
qWith the value of Terahertz quantum well detector cold head end to the parallelly connected gained of input capacitance of the electric capacity of the connecting line of normal temperature end, operational amplifier, GBW is the unity gain bandwidth of operational amplifier.
Preferably, said bias voltage is tens millivolts of magnitudes.
Preferably, said Terahertz quantum well detector is the Terahertz quantum well detector that is operated in photoconductive pattern, and its look-in frequency scope is 2 to 7THz.
Preferably, said photocurrent source Is calculates according to Is=PR, and wherein P is the power of incident THz wave, and R is the responsiveness of Terahertz quantum well detector.
A kind of detection method of high-speed inspection device of THz wave may further comprise the steps:
Step 1, the Terahertz quantum well detector carries out direct strength investigation to THz wave, the output photo-signal;
Step 2 is striden the resistance amplifying circuit said photo-signal is converted into voltage signal output, i.e. output voltage signal
Wherein w is the frequency of photo-signal, C
FFor striding the building-out capacitor in the resistance amplifying circuit, R
FStride resistance, R for striding resistance in the amplifying circuit
dBe the bypass differential resistor in the small-signal lump electrical model in the Terahertz quantum well detector, C
TFor striding the inverting input total capacitance of the operational amplifier in the resistance amplifying circuit.
As stated, the high-speed inspection method and the device of THz wave of the present invention have following beneficial effect:
The present invention adopts THz QWP that the THz wave of 2-7THz is carried out directly strength investigation of high speed; For size is not very large THz QWP; Its response cutoff frequency can reach tens MHz; For undersized THz QWP, its response cutoff frequency can reach GHz, is applicable to application such as THz wave communication and imaging.
Description of drawings
Fig. 1 is shown as the electrical block diagram of the high-speed inspection device of THz wave of the present invention.
Fig. 2 is shown as the electrical block diagram of the small-signal lump electrical model in the high-speed inspection device of THz wave of the present invention.
Fig. 3 is shown as the schematic flow sheet of the high-speed inspection method of THz wave of the present invention.
Embodiment
Below through specific instantiation embodiment of the present invention is described, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this instructions disclosed.The present invention can also implement or use through other different embodiment, and each item details in this instructions also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also accompanying drawing.Need to prove; The diagram that is provided in the present embodiment is only explained basic conception of the present invention in a schematic way; Satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and plotted when implementing according to reality; Kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also maybe be more complicated.
The invention discloses a kind of high-speed inspection device and method of THz wave, it can carry out the high speed direct detection to Terahertz (THz) ripple, is applicable to application such as following THz communication or imaging.The present invention adopts the Terahertz quantum well detector (THz QWP) that is operated in guided optical mode as sensitive detection parts; Provided its small-signal lump electrical model; And, designed corresponding high-speed inspection circuit (promptly striding the resistance amplifying circuit) to the very little characteristics of its working bias voltage.Wherein, the small-signal lump electrical model of THz QWP is an electric capacity bypass differential resistor of parallel connection and a photocurrent source, and model parameter can actual measurement obtains through calculating perhaps.The parts selection parameter of corresponding high-speed inspection circuit can obtain according to lump electrical model calculation of parameter.
Below in conjunction with embodiment and accompanying drawing the present invention is elaborated.
Embodiment one
Present embodiment provides a kind of high-speed inspection device of THz wave, and is as shown in Figure 1, and the high-speed inspection device of this THz wave comprises the Terahertz quantum well detector at least and strides the resistance amplifying circuit; Said Terahertz quantum well detector is in order to carry out direct strength investigation to THz wave; The said resistance amplifying circuit of striding is with thinking that the Terahertz quantum well detector provides bias voltage, and the photo-signal of Terahertz quantum well detector generation is converted into voltage signal.Respectively Terahertz quantum well detector and the structure of striding the resistance amplifying circuit are elaborated below.
[Terahertz quantum well detector]
The Terahertz quantum well detector is the extension of middle infrared quantum well detector (Quantum Well Infrared Photodetector) in the Terahertz frequency range; It is a kind of all solid state arrowband detector; Have good spectral analysis capabilities and very fast response speed, survey especially at focal plane arrays (FPA) in high sensitivity and high resolving power and have unique advantage aspect preparing; In addition, advantage such as it also possesses technical maturity, volume is little and easy of integration can be used for the high speed direct detection of the above THz wave of 1THz.For the ease of the design of subsequent conditioning circuit, the present invention proposes a kind of small-signal lump electrical model of Terahertz quantum well detector, this model is by capacitor C
qParallel connection bypass differential resistor R
dConstitute with photocurrent source Is, i.e. capacitor C
qWith bypass differential resistor R
dParallel connection, capacitor C simultaneously
qAlso parallelly connected with photocurrent source Is.Said photocurrent source Is is according to I
S=PR calculates, and wherein P is the power of incident THz wave, and R is the responsiveness of Terahertz quantum well detector.
Said capacitor C
qCan be according to formula C
q=ε
0ε
rA/h calculates, wherein, and ε
0Be permittivity of vacuum, value is 8.85 * 10-12F/m, ε
rBe the relative dielectric constant of GaAs/AlGaAs, its value is about 12.9, and A is the area of THz QWP device, and h is the thickness of cascade quantum well.
Said bypass differential resistor R
dCan differentiate obtains to I by V at the bias voltage place according to the background current V-I curve of THz QWP.
Said Terahertz quantum well detector can be chosen the Terahertz quantum well detector that is operated in photoconductive pattern; Its look-in frequency scope is 2 to 7THz; Also can choose the quantum well detector of other terahertz wave bands, the scope of the present invention's protection is not limited to the service band of the described Terahertz quantum well detector of present embodiment.
[striding the resistance amplifying circuit]
Stride the resistance amplifying circuit and comprise operational amplifier, building-out capacitor C
FHinder R with striding
FThe inverting input of said operational amplifier links to each other with an end of Terahertz quantum well detector, and the in-phase input end of operational amplifier connects bias voltage; Said stride the resistance be connected between the output terminal and inverting input of operational amplifier; Said building-out capacitor with said stride the resistance parallelly connected; The other end ground connection of said Terahertz quantum well detector; Said building-out capacitor
C
TBe the inverting input total capacitance of operational amplifier, its value is capacitor C
q(is capacitor C with THz QWP (Terahertz quantum well detector) cold head end to the value of the parallelly connected gained of input capacitance of the electric capacity of the connecting line of normal temperature end and operational amplifier
qParallelly connected with THz QWP (Terahertz quantum well detector) cold head end to the electric capacity of the connecting line of normal temperature end, the while capacitor C
qAlso parallelly connected with the input capacitance of operational amplifier), GBW is the unity gain bandwidth of operational amplifier.Said bias voltage is the millivolt magnitude.
Said operational amplifier is the operational amplifier of low noise, low input offset current, super large unity gain bandwidth.
Said building-out capacitor C
FCan be according to relational expression
Select, wherein C
FBe building-out capacitor, R
FFor striding resistance, C
TBe operational amplifier inverting input total capacitance, C
TValue be the capacitor C in the THz QWP small-signal lump electrical model
qWith the capacitance of QWP cold head end to the parallelly connected gained of input capacitance of the electric capacity of the connecting line of normal temperature end and operational amplifier, GBW is the unity gain bandwidth of said operational amplifier.
Because THz QWP has the intrinsic response speed that is exceedingly fast of picosecond, be that the 3dB cutoff frequency of its internal circuit is 1/2 π R under the situation of microstrip line or coaxial feeding of 50 Ω adopting characteristic impedance
LC (R
L=50 Ω), this value can reach hundreds of MHz even more than the GHz.By contrast, the bandwidth of external circuit is less, and the 3dB cutoff frequency of response device determines by external circuit, for
The present invention adopts THz QWP that the THz wave of 2-7THz is carried out directly strength investigation of high speed; For size is not that (like area is 600um * 600um to very large THz QWP; Thickness is 3um), its response cutoff frequency can reach tens MHz, for undersized THz QWP; Its response cutoff frequency can reach GHz, is applicable to application such as THz wave communication and imaging.
The present invention is directed to the high-speed inspection circuit of said THz QWP, very low working bias voltage (tens millivolts) is provided can for THz QWP, adopt simultaneously and stride the resistance amplifying circuit, the photo-signal of THz QWP is converted into voltage signal, convenient back circuit link is handled.
Embodiment two
Present embodiment provides a kind of high-speed inspection method of THz wave, and is as shown in Figure 3, may further comprise the steps:
S1, the Terahertz quantum well detector carries out direct strength investigation to THz wave, the output photo-signal;
S2 strides the resistance amplifying circuit said photo-signal is converted into voltage signal output;
S3 carries out subsequent treatment to voltage signal.
Consult Fig. 1, Fig. 2, the high-speed inspection method of the described THz wave of present embodiment can realize that the embodiment of this method is following by the high-speed inspection device of embodiment one described THz wave:
(1) the device working temperature of THz QWP is lower, need THz QWP be placed on the cold head of mechanical refrigerator, and cryogenic temperature is about 4K.According to the difference of THz QWP, need the adjustment incident angle, as do not adopt the THz QWP of optical grating construction, adopt 45 ° of oblique incidence modes; As adopted the THz QWP of optical grating construction, can adopt the vertical incidence mode.The Terahertz quantum well detector comprises one in order to conveniently to stride the small-signal lump electrical model of the parameter designing that hinders amplifying circuit, and said small-signal lump electrical model is by capacitor C
qParallel connection bypass differential resistor R
dConstitute with photocurrent source Is.
(2) circuit theory diagrams shown in Figure 1 are carried out circuit according to the present invention, and the subsequent conditioning circuit link of arranging in pairs or groups as required.In this circuit, operational amplifier adopts the bipolar power supply power supply.For Vbias end (being the bias voltage end) among Fig. 1 provides suitable bias voltage, be generally 30-60mV.Because the operational amplifier that negative feedback causes is striden in-phase input end and the approximately equalised characteristic of inverting input voltage in the resistance amplifying circuit, this voltage (V+ and V-) can be carried on the THz QWP.Stride resistance R
FValue can select according to the gain needs, generally be chosen as 1k Ω to 10k Ω; The phase compensation capacitor C
FCan be according to relational expression
Confirm, wherein C
FBe building-out capacitor, C
TBe operational amplifier inverting input total capacitance; Its value is the electric capacity in the THz QWP small-signal lump electrical model and the QWP cold head end capacitance to the parallelly connected gained of input capacitance of the electric capacity of the connecting line of normal temperature end and operational amplifier, and GBW is the unity gain bandwidth of said operational amplifier.
(3) THz QWP one is connected to the inverting input of operational amplifier, the ground of this circuit of termination.
(4) output of the output terminal of operational amplifier is the voltage signal corresponding to incident THz wave intensity
Wherein ω is the frequency of photo-signal, C
FFor striding the building-out capacitor in the resistance amplifying circuit, R
FStride resistance, R for striding resistance in the amplifying circuit
dBe the bypass differential resistor in the small-signal lump electrical model in the Terahertz quantum well detector, C
TFor striding the inverting input total capacitance of the operational amplifier in the resistance amplifying circuit.Subsequent conditioning circuit can be exported signal (being voltage signal) to this and handle accordingly.
The technical matters that the present invention will solve is to provide a kind of method and device that Terahertz (THz) ripple is carried out the high speed direct detection.Through further investigation to the Terahertz device; The high-speed inspection method of the THz wave that the present invention proposes is a kind ofly based on the Terahertz quantum well detector THz ripple to be carried out the method for direct high-speed inspection; This method adopts THz QWP as detector; For THz QWP suitable working bias voltage is provided through the high-speed inspection circuit, and converts the incident terahertz wave signal to voltage signal output.
In sum, the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any be familiar with this technological personage all can be under spirit of the present invention and category, the foregoing description is modified or is changed.Therefore, have common knowledge the knowledgeable in the affiliated such as technical field, must contain by claim of the present invention not breaking away from all equivalence modifications of being accomplished under disclosed spirit and the technological thought or changing.
Claims (5)
1. the high-speed inspection device of a THz wave is characterized in that, the high-speed inspection device of said THz wave comprises at least:
The Terahertz quantum well detector in order to THz wave is carried out direct strength investigation, comprises one in order to conveniently to stride the small-signal lump electrical model of the parameter designing that hinders amplifying circuit, and said small-signal lump electrical model is by capacitor C
qParallel connection bypass differential resistor R
dWith photocurrent source I
sConstitute;
Stride the resistance amplifying circuit, with thinking that the Terahertz quantum well detector provides bias voltage, and the photo-signal of Terahertz quantum well detector output is converted into voltage signal; Comprise operational amplifier, building-out capacitor C
FHinder R with striding
FThe inverting input of said operational amplifier links to each other with an end of Terahertz quantum well detector, and the in-phase input end of operational amplifier connects bias voltage; Said stride the resistance be connected between the output terminal and inverting input of operational amplifier; Said building-out capacitor with said stride the resistance parallelly connected; The other end ground connection of said Terahertz quantum well detector;
Said building-out capacitor
C
TBe the inverting input total capacitance of operational amplifier, its value is capacitor C
qWith the value of Terahertz quantum well detector cold head end to the parallelly connected gained of input capacitance of the electric capacity of the connecting line of normal temperature end, operational amplifier, GBW is the unity gain bandwidth of operational amplifier.
2. the high-speed inspection device of THz wave according to claim 1, it is characterized in that: said bias voltage is tens millivolts of magnitudes.
3. the high-speed inspection device of THz wave according to claim 1, it is characterized in that: said Terahertz quantum well detector is the Terahertz quantum well detector that is operated in photoconductive pattern, its look-in frequency scope is 2 to 7THz.
4. the high-speed inspection device of THz wave according to claim 1, it is characterized in that: said photocurrent source Is calculates according to Is=PR, and wherein P is the power of incident THz wave, and R is the responsiveness of Terahertz quantum well detector.
5. the detection method of the high-speed inspection device of the described THz wave of claim 1 is characterized in that, may further comprise the steps:
Step 1, the Terahertz quantum well detector carries out direct strength investigation to THz wave, the output photo-signal;
Step 2 is striden the resistance amplifying circuit said photo-signal is converted into voltage signal output, i.e. output voltage signal
Wherein ω is the frequency of photo-signal, C
FFor striding the building-out capacitor in the resistance amplifying circuit, R
FStride resistance, R for striding resistance in the amplifying circuit
dBe the bypass differential resistor in the small-signal lump electrical model in the Terahertz quantum well detector, C
TFor striding the inverting input total capacitance of the operational amplifier in the resistance amplifying circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210193033.3A CN102680091B (en) | 2012-06-12 | 2012-06-12 | High-speed detection method and device for terahertz |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210193033.3A CN102680091B (en) | 2012-06-12 | 2012-06-12 | High-speed detection method and device for terahertz |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102680091A true CN102680091A (en) | 2012-09-19 |
| CN102680091B CN102680091B (en) | 2014-03-12 |
Family
ID=46812362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210193033.3A Active CN102680091B (en) | 2012-06-12 | 2012-06-12 | High-speed detection method and device for terahertz |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102680091B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103528678A (en) * | 2013-10-30 | 2014-01-22 | 成都市宏山科技有限公司 | Light intensity detection circuit |
| CN103913240A (en) * | 2014-04-11 | 2014-07-09 | 电子科技大学 | Current type terahertz pyroelectricity detector reading circuit |
| CN104614081A (en) * | 2015-01-22 | 2015-05-13 | 江苏大学 | Phase position detection method and circuit used in Terahertz solid circuit imaging |
| CN109541712A (en) * | 2018-11-30 | 2019-03-29 | 天津大学 | Based on periodic gate metal gate MOSFET terahertz detector |
| CN109828428A (en) * | 2019-03-05 | 2019-05-31 | 明基智能科技（上海）有限公司 | Projector and light circuit for detecting |
| CN113551770A (en) * | 2021-07-23 | 2021-10-26 | 中国科学院半导体研究所 | Terahertz wave amplitude and phase reading device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996029A (en) * | 2006-12-25 | 2007-07-11 | 欧阳征标 | THz signal highly-sensitive detector and camera |
| JP2007316044A (en) * | 2006-05-26 | 2007-12-06 | Junichi Nishizawa | Terahertz light-sensing system using photocapacitance method |
| CN201307089Y (en) * | 2008-09-18 | 2009-09-09 | 杨珺 | A Terahertz wave detector and a detection system |
| WO2011048170A1 (en) * | 2009-10-23 | 2011-04-28 | International Business Machines Corporation | Terahertz detector comprising a capacitively coupled antenna |
| CN102323040A (en) * | 2011-05-30 | 2012-01-18 | 中国科学院上海微系统与信息技术研究所 | Power measuring device and method for pulse ejection tera-hertz quantum cascade laser |
-
2012
- 2012-06-12 CN CN201210193033.3A patent/CN102680091B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007316044A (en) * | 2006-05-26 | 2007-12-06 | Junichi Nishizawa | Terahertz light-sensing system using photocapacitance method |
| CN1996029A (en) * | 2006-12-25 | 2007-07-11 | 欧阳征标 | THz signal highly-sensitive detector and camera |
| CN201307089Y (en) * | 2008-09-18 | 2009-09-09 | 杨珺 | A Terahertz wave detector and a detection system |
| WO2011048170A1 (en) * | 2009-10-23 | 2011-04-28 | International Business Machines Corporation | Terahertz detector comprising a capacitively coupled antenna |
| CN102323040A (en) * | 2011-05-30 | 2012-01-18 | 中国科学院上海微系统与信息技术研究所 | Power measuring device and method for pulse ejection tera-hertz quantum cascade laser |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103528678A (en) * | 2013-10-30 | 2014-01-22 | 成都市宏山科技有限公司 | Light intensity detection circuit |
| CN103913240A (en) * | 2014-04-11 | 2014-07-09 | 电子科技大学 | Current type terahertz pyroelectricity detector reading circuit |
| CN103913240B (en) * | 2014-04-11 | 2017-01-11 | 电子科技大学 | Current type terahertz pyroelectricity detector reading circuit |
| CN104614081A (en) * | 2015-01-22 | 2015-05-13 | 江苏大学 | Phase position detection method and circuit used in Terahertz solid circuit imaging |
| CN109541712A (en) * | 2018-11-30 | 2019-03-29 | 天津大学 | Based on periodic gate metal gate MOSFET terahertz detector |
| CN109828428A (en) * | 2019-03-05 | 2019-05-31 | 明基智能科技（上海）有限公司 | Projector and light circuit for detecting |
| CN109828428B (en) * | 2019-03-05 | 2020-11-17 | 明基智能科技（上海）有限公司 | Projector and light detection circuit |
| CN113551770A (en) * | 2021-07-23 | 2021-10-26 | 中国科学院半导体研究所 | Terahertz wave amplitude and phase reading device |
| CN113551770B (en) * | 2021-07-23 | 2023-12-29 | 中国科学院半导体研究所 | Terahertz wave amplitude and phase reading device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102680091B (en) | 2014-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102680091B (en) | High-speed detection method and device for terahertz | |
| Al Hadi et al. | A terahertz detector array in a SiGe HBT technology | |
| CN106441597B (en) | A kind of reversed bias voltage applied to array avalanche diode adjusts circuit | |
| Pfeiffer et al. | Toward low-NEP room-temperature THz MOSFET direct detectors in CMOS technology | |
| Grzyb et al. | THz direct detector and heterodyne receiver arrays in silicon nanoscale technologies | |
| CN106382987B (en) | Full optical fiber laser heterodyne actinometer | |
| CN103090977B (en) | Terahertz signal detection device | |
| CN102721955B (en) | Balanced type photoelectric detector in 2mu m coherent laser wind-finding radar system | |
| Schoenherr et al. | Extremely broadband characterization of a Schottky diode based THz detector | |
| CN113138018A (en) | High signal-to-noise ratio broadband balance homodyne detector for quantum random number generation | |
| WO2019019666A1 (en) | Fibre grating sensing demodulation system | |
| Zheng et al. | Design and analysis of a W-Band detector in 0.18-µm SiGe BiCMOS | |
| CN109039353A (en) | A kind of superconduction heterodyne integrated receiver | |
| CN110455410B (en) | Array resonant terahertz receiver and terahertz spectrometer device thereof | |
| Marczewski et al. | THz detectors based on Si-CMOS technology field effect transistors–advantages, limitations and perspectives for THz imaging and spectroscopy | |
| CN103616674A (en) | Method for measuring optimal local oscillation optical power of photoelectric detector | |
| CN110132425B (en) | Radiometer front end and terminal equipment | |
| CN103091568B (en) | A kind of avalanche photodiode excessive noise factor measuring system | |
| CN110231096B (en) | Radiometer front-end structure and terminal equipment | |
| CN205940760U (en) | Terahertz detection device | |
| CN111106867A (en) | Detection module suitable for continuous variable quantum random number generation | |
| CN109932057B (en) | Optical power detection device and method based on quasi-optical cavity microwave resonance principle | |
| CN102141631A (en) | High-sensitivity and wideband hydrogen or deuterium alpha spectrum line intensity measurement method and system | |
| CN107846248A (en) | A kind of ultra wide band multichannel optoelectronic integration detector for microwave photon system | |
| CN105352606A (en) | Reading circuit of uncooled infrared focal plane array detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |