CN110231096B - Radiometer front-end structure and terminal equipment - Google Patents
Radiometer front-end structure and terminal equipment Download PDFInfo
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- CN110231096B CN110231096B CN201910500843.0A CN201910500843A CN110231096B CN 110231096 B CN110231096 B CN 110231096B CN 201910500843 A CN201910500843 A CN 201910500843A CN 110231096 B CN110231096 B CN 110231096B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/068—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling parameters other than temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/46—Radiation pyrometry, e.g. infrared or optical thermometry using radiation pressure or radiometer effect
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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Abstract
The invention is suitable for the technical fields of terahertz security inspection, substance detection, remote sensing, medical diagnosis and the like, and provides a front-end structure of a radiometer and terminal equipment, wherein the structure comprises the following components: the upper side of the metal box body is provided with a groove, a plurality of bosses are arranged in the groove, and the bosses are used for positioning the chip; the two-stage low-noise amplifier chip and the wave detector chip are sequentially arranged on the corresponding bosses; the quartz probe is arranged in the groove of the metal box body, positioned on the left side of the boss corresponding to the two-stage low-noise amplifier chip and used for receiving a signal radiated by an object; the video amplifier is arranged in the groove of the metal box body and is positioned on the right side of the boss corresponding to the wave detector chip; the adjacent devices are electrically connected, so that the size of each circuit can be obviously reduced, the high integration level is realized, the full-automatic assembly can be realized, the assembly difficulty is reduced, and the engineering and batch production can be realized.
Description
Technical Field
The invention belongs to the technical fields of terahertz security inspection, substance detection, remote sensing, medical diagnosis and the like, and particularly relates to a front-end structure of a radiometer and terminal equipment.
Background
Radiometers are high-sensitivity receivers for measuring thermal radiation of objects, and are the main tools of passive microwave remote sensing. At present, microwave radiometers based on ground (including ground and ship-borne platforms), air-based (including airplanes, missiles and balloon platforms), star-based (including satellites, spacecrafts and space shuttle platforms) and other carrying platforms are developed rapidly, and the radiometers are also developed from meter wave radiometers to present millimeter wave, sub-millimeter wave and even terahertz radiometers. Terahertz can penetrate through non-metal and non-polar materials with little attenuation, and terahertz imaging detection inside the materials is achieved.
The front end structure of the radiometer is used as an important component of a radiometer system, and the performance of the radiometer directly influences the indexes of the system. At present, the terahertz circuit module studied is mostly a single-function module, only can realize single functions such as low-noise amplification or mixing, and cascade on the basis of the single module to realize the system circuit of terahertz radiometer front-end structure, for example, a low-noise radiometer receiver among the prior art, including microstrip conversion integrated module, filtering amplification integrated module and monolithic amplification integrated module, each module mutually independent airtight encapsulation, adopt coaxial terminal to link to each other, and divide into two box body assemblies with detection and integrating circuit, adopt the electric connector to connect between the box body, thereby lead to the integrated level relatively poor, the assembly degree of difficulty is big.
In addition, when an amplifier in the front-end structure of the radiometer works in a constant current bias state, the output voltage of the radiometer is sensitive to the ambient temperature due to the variation of the gain of the amplifier and the detection sensitivity of the detector along with the ambient temperature, and the variation of the ambient temperature can cause the output voltage of the radiometer to generate obvious voltage drift, so that the judgment of the whole system on the substances can be influenced.
Disclosure of Invention
In view of this, embodiments of the present invention provide a front-end structure of a radiometer and a terminal device, so as to solve the problems of poor integration level and high assembly difficulty in the prior art, and the problem that the output voltage of the radiometer will generate obvious voltage drift due to environmental temperature change.
A first aspect of an embodiment of the present invention provides a radiometer front-end structure, including:
the upper side of the metal box body is provided with a groove, a plurality of bosses are arranged in the groove, and the bosses are used for positioning the chip;
the two-stage low-noise amplifier chip and the wave detector chip are sequentially arranged on the corresponding bosses;
the quartz probe is arranged in the groove of the metal box body, positioned on the left side of the boss corresponding to the two-stage low-noise amplifier chip and used for receiving a signal radiated by an object;
the video amplifier is arranged in the groove of the metal box body and is positioned on the right side of the boss corresponding to the wave detector chip;
and the quartz probe, the two-stage low-noise amplifier chip, the detector chip and adjacent devices in the video amplifier are electrically connected.
In one embodiment, the two-stage low noise amplifier chip includes: a first low noise amplifier chip and a second low noise amplifier chip;
the radiometer front-end structure further includes:
the conducting wires are arranged among bosses in the groove of the metal box body, among bosses corresponding to the quartz probe and the first low-noise amplifier chip, and among bosses corresponding to the wave detector chip and the video amplifier;
and adjacent devices are electrically connected through the conducting wire.
In one embodiment, the conductive line comprises a microstrip line and a fused silica substrate;
and the conductive lines arranged among the quartz probe, the two-stage low-noise amplifier chip and the adjacent devices of the detector chip are fused quartz substrates, and the conductive lines arranged between the detector chip and the video amplifier are microstrip lines.
In one embodiment, the quartz probe and the first low noise amplifier chip are electrically connected by bonding through a fused quartz substrate between the quartz probe and the first low noise amplifier chip;
the two-stage low-noise amplifier chip and the detector chip are electrically connected in a bonding mode through the fused quartz substrates corresponding to the two sides of the boss;
the wave detector chip and the video amplifier are electrically connected in a bonding mode through a microstrip line between the wave detector chip and the video amplifier
In one embodiment, the method further comprises: and the temperature compensation bias circuit is connected with at least one low noise amplifier chip in the two stages of low noise amplifier chips.
In one embodiment, the temperature compensation bias circuit includes a first input terminal, a first temperature compensation circuit, a second temperature compensation circuit, an operational amplifier, a diode, a first resistor and a second resistor;
the input end of the first temperature compensation circuit and the input end of the second temperature compensation circuit are both connected with the first input end, and the output end of the first temperature compensation circuit and the output end of the second temperature compensation circuit are respectively connected with the positive input end and the negative input end of the operational amplifier; the output end of the first temperature compensation circuit or the output end of the second temperature compensation circuit is also connected with the control end of the low-noise amplifier chip;
the output end of the operational amplifier is grounded through a diode, a first resistor and a second resistor in sequence;
the common contact of the first resistor and the second resistor is connected with the input end of the low-noise amplifier chip;
the other control end of the low-noise amplifier chip is grounded;
the low noise amplifier chip is the two-stage low noise amplifier chip, or is a first low noise amplifier chip, or is a second low noise amplifier chip.
In one embodiment, the first temperature compensation circuit and the second temperature compensation circuit have the same circuit structure;
the first temperature compensation circuit or the second temperature compensation circuit comprises a second input end, a second output end, a thermistor and a third resistor;
the second input end is connected with the input end of the thermistor and the input end of the third resistor;
the output end of the thermistor and the output end of the third resistor are connected with the second output end.
In one embodiment, the substrate of the two-stage low noise amplifier chip is an InP substrate.
In one embodiment, the operational amplifier in the video amplifier is adjusted by adjusting the amplification factor of the operational amplifier by using a bonding multi-resistance series thin film resistor and a bonding wire.
A first aspect of embodiments of the present invention provides a terminal device, including any one of the above-described radiometer front-end structures.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: by means of the device chip and the chip arranged in the metal box body, the size of each circuit can be reduced remarkably, high integration level is achieved, full-automatic assembly can be achieved, the boss is arranged, part of the chips can be arranged on the corresponding bosses, assembly difficulty is reduced, and engineering and batch production can be achieved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a cross-sectional view of a radiometer front-end configuration provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of a cross-sectional view of a radiometer front-end configuration provided in accordance with another embodiment of the present invention;
FIG. 3 is a schematic diagram of a cross-sectional view of a radiometer front-end configuration (including a temperature compensated bias circuit) provided by embodiments of the present invention;
FIG. 4 is an exemplary diagram of a temperature compensated bias circuit provided by an embodiment of the present invention;
fig. 5 is a schematic diagram of a first temperature compensation circuit or a second temperature compensation circuit according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic diagram of a front-end structure of a radiometer according to an embodiment of the present invention, which is described in detail below.
The radiometer front-end structure may include: a metal can 101, a boss 102, a quartz probe 103, a two-stage low noise amplifier chip 104, a detector chip 105, and a video amplifier 106.
The metal box body 101 is provided with a groove on the upper side, a plurality of bosses 102 are arranged in the groove, and the bosses 102 are used for positioning a chip;
the two-stage low noise amplifier chip 104 and the detector chip 105 are sequentially arranged on the corresponding bosses 102;
the quartz probe 103 is arranged in the groove of the metal box body 101, is positioned on the left side of the boss corresponding to the two-stage low-noise amplifier chip 104, and is used for receiving a signal radiated by an object;
the video amplifier 106 is arranged in the groove of the metal box body 101 and is positioned on the right side of the boss corresponding to the detector chip 105;
and adjacent devices of the quartz probe 103, the two-stage low-noise amplifier chip 104, the wave detector chip 105 and the video amplifier 106 are electrically connected.
Optionally, the quartz probe 103 is used for receiving a terahertz signal radiated by the object. The terahertz wave is an electromagnetic wave with the frequency within the spectrum range of 0.1THz-10THz and is positioned between millimeter waves and optical waves. Terahertz can penetrate through non-metallic and non-polar materials such as ceramics, textiles, cloth, paperboards, plastics, wood, walls and the like with little attenuation, and terahertz imaging detection inside the materials can be realized.
The low-noise amplifier chip 104 is used for amplifying received broadband useful signals, the two-stage noise amplifier chip can realize higher radio frequency gain, the received broadband useful signals are amplified, after the detector outputs video useful signals, the useful signal amplitude is higher, compared with constant thermal noise generated by the detector, the signal-to-noise ratio of the video signals is higher, and then the equivalent noise temperature sensitivity of the radiometer is improved.
The detector chip 105 is used to convert the received useful signal into a dc detection voltage.
The video amplifier 106 is used to further amplify and convert the detected voltage into a differential voltage output.
Above-mentioned radiometer front end structure is through with the device chipization to set up each chip in a metal box body, can show the volume that reduces each circuit, have higher integrated level, can realize full automatic assembly, set up the boss in addition, make partial chip can set up on the boss that corresponds, reduce the assembly degree of difficulty, can realize engineering and batch production.
Alternatively, as shown in fig. 2, the two-stage low noise amplifier chip 104 may include: a first low noise amplifier chip 1041 and a second low noise amplifier chip 1042.
As shown in fig. 2, the radiometer front-end structure may further include: conductive lines 107.
The conducting wires 107 are arranged among bosses in the groove of the metal box body 101, among bosses corresponding to the quartz probe 103 and the first low-noise amplifier chip 1041, and among bosses corresponding to the detector chip 105 and the video amplifier 106;
wherein adjacent devices are electrically connected by the conductive line 107.
Optionally, the conductive line includes a microstrip line and a fused silica substrate.
Optionally, the conductive line arranged between the adjacent devices of the quartz probe 103, the two-stage low noise amplifier chip 104, and the detector chip 105 may be a fused quartz substrate, and the conductive line arranged between the detector chip 105 and the video amplifier 106 may be a microstrip line.
Optionally, the adjacent devices are electrically connected by bonding via conductive wires between the adjacent devices.
Optionally, the quartz probe 103 and the first low noise amplifier chip 1041 are electrically connected by bonding through a fused quartz substrate between the quartz probe 103 and the first low noise amplifier chip 1041.
The two-stage low-noise amplifier chip 104 and the detector chip 105 are electrically connected in a bonding mode through the fused quartz substrates on two sides of the corresponding boss;
the detector chip 105 and the video amplifier 106 are electrically connected by a bonding method through a microstrip line between the detector chip 105 and the video amplifier 106.
Optionally, the electrical connection is realized by using a bonding wire in a bonding manner, and the bonding wire may include a gold wire, a gold ribbon, or an aluminum wire. Preferably, the electrical connection can be achieved using gold bonding wires.
Optionally, in the front-end structure of the radiometer, chip boss positioning and conducting wire positioning are performed in the groove of the metal box body, so that full-automatic mounting of a chip, a conducting wire, a peripheral capacitor, a gasket and the like can be realized; after the shelving is finished, the product is supported by the aid of smaller bonding areas (less than or equal to 50 x 100 mm)2) And carrying out bonding alignment image recognition with a special positioning mark in the metal box body, thereby realizing full-automatic gold wire bonding.
Optionally, the substrate of the two-stage low noise amplifier chip 104 is an InP substrate, and compared with a GaAs device, the two-stage low noise amplifier chip with an InP substrate has a higher cutoff frequency and better noise characteristics.
Optionally, the operational amplifier in the video amplifier 106 may be adjusted in amplification factor by using a bonding multi-resistance series thin film resistor, and adjusting the resistance value by using a bonding wire. In the video amplification PCB circuit of the video amplifier 106, the adjustment of the output voltage interval of the passive detector, i.e. the radiometer, can be achieved by means of the operational amplifier. In the traditional method, a surface-mounted resistor is used for welding and replacing components, in the embodiment, the operational amplifier proportional resistor is changed into a bonding type multi-resistance series thin film resistor, so that the welding-free high-efficiency debugging test can be realized, the debugging efficiency can be greatly improved, the manual welding process is reduced, and the product reliability is improved.
Optionally, as shown in fig. 3, the front-end structure of the radiometer may further include: a temperature compensated bias circuit 108.
The temperature compensated bias circuit 108 may be coupled to at least one of the two stages of low noise amplifier chips 104. For example, the temperature compensation bias circuit 108 may be connected to only the first low noise amplifier chip 1041, only the second low noise amplifier chip 1042, or both the first low noise amplifier chip 1041 and the second low noise amplifier chip 1042.
Optionally, as shown in fig. 4, the temperature compensation bias circuit 108 may include a first input 1081, a first temperature compensation circuit 1082, a second temperature compensation circuit 1083, an operational amplifier 1084, a diode 1085, and a first resistor 1086 and a second resistor 1087;
the input end of the first temperature compensation circuit 1082 and the input end of the second temperature compensation circuit 1083 are both connected to the first input end 1081, and the output end of the first temperature compensation circuit 1082 and the output end of the second temperature compensation circuit 1083 are respectively connected to the positive input end and the negative input end of the operational amplifier 1084; the output end of the first temperature compensation circuit 1082 or the output end of the second temperature compensation circuit 1083 is further connected to the control end of the low noise amplifier chip;
the output end of the operational amplifier 1084 is grounded through a diode 1085, a first resistor 1086 and a second resistor 1087 in sequence;
a common node of the first resistor 1086 and the second resistor 1087 is connected to an input terminal of the low noise amplifier chip;
the other control end of the low-noise amplifier chip is grounded;
the low noise amplifier chip is the two-stage low noise amplifier chip 104, or the first low noise amplifier core 1041, or the second low noise amplifier chip 1042.
Alternatively, as shown in fig. 4, the detector chip 105 outputs the voltage Av ═ K ═ G ═ β; and K is equivalent input power of the radiometer and is a constant value in a certain use scene. The value of G β needs to be as stable as possible if it is to be satisfied that the output voltage Av is constant.
The output voltage of the radiometer generally requires a temperature range of-20 deg.C and +40 deg.C and a voltage variation as small as possible. If the temperature compensation bias circuit is not used, the gain of low noise is reduced by 15% at 40 ℃ higher than 20 ℃ at normal temperature under the bias condition of the traditional constant current source, the gain of the two-stage low noise amplifier chip is reduced by 30%, the sensitivity beta of the detector chip is reduced by 40%, and the total output voltage is reduced by more than 50%; at the low temperature of-20 ℃, the gain of the two-stage low noise amplifier chip is improved by 30%, the sensitivity beta of the detector is improved by 40%, and the total output voltage is increased by more than 50%.
The radiometer output voltage drifts along with the temperature, so that the radiometer calibration voltage in the whole machine has deviation from the radiometer static working voltage in the actual whole machine in a high-temperature or low-temperature state, and the detected energy information of the external substances is difficult to effectively reflect.
After the temperature compensation bias circuit is adopted, the high-temperature and low-temperature bias conditions of the two-stage low-noise amplifier chip are changed, so that the high-temperature and low-temperature changes of the gain of the two-stage low-noise amplifier chip are compensated, the change trend of the detection sensitivity beta of the detector chip is counteracted, and the value of G beta is kept constant.
Optionally, as shown in fig. 5, the circuit structures of the first temperature compensation circuit 1082 and the second temperature compensation circuit 1083 are the same;
the first temperature compensation circuit 1082 or the second temperature compensation circuit 1083 comprises a second input terminal 501, a second output terminal 502, a thermistor 503 and a third resistor 504;
the second input terminal 501 is connected to the input terminal of the thermistor 503 and the input terminal of the third resistor 504;
the output end of the thermistor 503 and the output end of the third resistor 504 are connected to the second output end 502.
Optionally, in order to ensure that the output voltage of the two-stage low noise amplifier chip after temperature compensation is stable, the thermistor 503 may be a 1K ohm thermistor, and the third resistor 504 may be a 100 ohm common resistor.
Optionally, the equivalent resistances of the first temperature compensation circuit 1082 and the second temperature compensation circuit 1083 decrease with increasing temperature and increase with decreasing temperature. Optionally, the equivalent resistance of the first temperature compensation circuit 1082 and the second temperature compensation circuit 1083 is the parallel resistance of the thermistor 503 and the third resistor 504 shown in fig. 5.
The change rule of temperature compensation is as follows: when the environment temperature T rises, the thermistor is reduced, the drain voltage Vd of the low-noise amplifier chip is reduced, the drain current Ids is increased, the grid voltage Vg of the low-noise amplifier chip is improved after the operational amplifier output Vo is subjected to self-adaptive adjustment, and the gain G of the low-noise amplifier chip is increased, so that the gain of the low-noise amplifier chip is increased by delta G, the sensitivity beta of the wave detector chip is compensated to be reduced by delta beta, and the variation of the output voltage Av of the wave detector chip is reduced. Experiments show that after the temperature compensation bias circuit improved by the embodiment is adopted, the variation rate of the Av at the high temperature of 40 ℃ and the low temperature of-20 ℃ is less than 10 percent compared with the normal temperature. Therefore, the temperature compensation bias circuit adopts a constant current source-based temperature compensation circuit scheme, so that the preheating stabilization time of the circuit can be obviously reduced, and the drift of the output voltage of a product along with the change of the ambient temperature can be obviously improved.
Above-mentioned radiometer front end structure is through with the device chipization to set up each chip in a metal box body, can show the volume that reduces each circuit, have higher integrated level, can realize full automatic assembly, set up the boss in addition, make the chip set up on the boss that corresponds, reduce the assembly degree of difficulty, can realize engineering and batch production ization. In addition, the temperature compensation bias circuit is additionally arranged, and the temperature compensation circuit based on the constant current source is adopted, so that the preheating stabilization time of the circuit can be obviously shortened, and the drift of the output voltage of the product along with the change of the environmental temperature can be obviously improved.
Optionally, an embodiment of the present invention further provides a terminal device, where the terminal device may include any one of the foregoing radiometer front-end structures, and has all the beneficial effects of the foregoing radiometer front-end structure.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (8)
1. A radiometer front-end configuration, comprising:
the upper side of the metal box body is provided with a groove, a plurality of bosses are arranged in the groove, and the bosses are used for positioning the chip;
the two-stage low-noise amplifier chip and the wave detector chip are sequentially arranged on the corresponding bosses;
the quartz probe is arranged in the groove of the metal box body, positioned on the left side of the boss corresponding to the two-stage low-noise amplifier chip and used for receiving a signal radiated by an object;
the video amplifier is arranged in the groove of the metal box body and is positioned on the right side of the boss corresponding to the wave detector chip;
the quartz probe, the two-stage low-noise amplifier chip, the detector chip and adjacent devices in the video amplifier are electrically connected;
further comprising: the temperature compensation bias circuit is connected with at least one low-noise amplifier chip in the two-stage low-noise amplifier chips;
the temperature compensation bias circuit comprises a first input end, a first temperature compensation circuit, a second temperature compensation circuit, an operational amplifier, a diode, a first resistor and a second resistor; the first temperature compensation circuit and the second temperature compensation circuit have the same circuit structure;
the input end of the first temperature compensation circuit and the input end of the second temperature compensation circuit are both connected with the first input end, and the output end of the first temperature compensation circuit and the output end of the second temperature compensation circuit are respectively connected with the positive input end and the negative input end of the operational amplifier; the output end of the first temperature compensation circuit or the output end of the second temperature compensation circuit is also connected with the control end of the low-noise amplifier chip;
the output end of the operational amplifier is grounded through a diode, a first resistor and a second resistor in sequence;
the common contact of the first resistor and the second resistor is connected with the input end of the low-noise amplifier chip;
the other control end of the low-noise amplifier chip is grounded;
the low noise amplifier chip is the two-stage low noise amplifier chip, or is a first low noise amplifier chip, or is a second low noise amplifier chip.
2. The radiometer front-end configuration of claim 1, wherein said two-stage low-noise amplifier chip comprises: a first low noise amplifier chip and a second low noise amplifier chip;
the radiometer front-end structure further includes:
the conducting wires are arranged among bosses in the groove of the metal box body, among bosses corresponding to the quartz probe and the first low-noise amplifier chip, and among bosses corresponding to the wave detector chip and the video amplifier;
and adjacent devices are electrically connected through the conducting wire.
3. The radiometer front-end configuration of claim 2, wherein the conductive lines comprise microstrip lines and a fused silica substrate;
and the conductive lines arranged among the quartz probe, the two-stage low-noise amplifier chip and the adjacent devices of the detector chip are fused quartz substrates, and the conductive lines arranged between the detector chip and the video amplifier are microstrip lines.
4. The radiometer front-end configuration of claim 3,
the quartz probe and the first low-noise amplifier chip are electrically connected in a bonding mode through a fused quartz substrate between the quartz probe and the first low-noise amplifier chip;
the two-stage low-noise amplifier chip and the detector chip are electrically connected in a bonding mode through the fused quartz substrates corresponding to the two sides of the boss;
the wave detector chip and the video amplifier are electrically connected in a bonding mode through a microstrip line between the wave detector chip and the video amplifier.
5. The radiometer front-end configuration of claim 1,
the first temperature compensation circuit or the second temperature compensation circuit comprises a second input end, a second output end, a thermistor and a third resistor;
the second input end is connected with the input end of the thermistor and the input end of the third resistor;
the output end of the thermistor and the output end of the third resistor are connected with the second output end.
6. The radiometer front-end configuration of claim 1, wherein the substrate of the two-stage low-noise amplifier chip is an InP substrate.
7. The radiometer front-end configuration of any of claims 1 through 6, wherein the operational amplifier amplification in the video amplifier is adjusted by using a bonded multi-resistance series thin film resistor, and the resistance is adjusted by a bonding wire.
8. A terminal device comprising the radiometer front-end configuration of any of claims 1-7 above.
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| CN2624193Y (en) * | 2003-05-06 | 2004-07-07 | 北京莱姆电子有限公司 | Temperature compensation circuit |
| JP2007085840A (en) * | 2005-09-21 | 2007-04-05 | Mitsumi Electric Co Ltd | Infrared detection device |
| TWI509983B (en) * | 2011-02-01 | 2015-11-21 | Wistron Neweb Corp | Temperature compensating device and satellite signal receiving system |
| CN105319160B (en) * | 2015-10-30 | 2020-06-26 | 中国电子科技集团公司第四十八研究所 | Temperature compensation device of infrared emitter for gas-liquid two-phase flow detection and infrared detection device |
| CN205958115U (en) * | 2016-08-24 | 2017-02-15 | 四川天微电子有限责任公司 | Temperature compensation circuit is synthesized to triband infrared flame detector infrared tube software and hardware |
| CN207184464U (en) * | 2017-05-09 | 2018-04-03 | 陕西博亚微波有限公司 | A kind of 3mm Microwave Low-Noises directly examine receiving front-end component |
| CN107484350A (en) * | 2017-09-14 | 2017-12-15 | 中国电子科技集团公司第十三研究所 | Microwave device and its assembly method |
| CN110132425B (en) * | 2019-06-11 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | Radiometer front end and terminal equipment |
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| CN110187195B (en) * | 2019-06-11 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | Radiometer front end and terminal equipment |
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