CN110132425B - Radiometer front end and terminal equipment - Google Patents
Radiometer front end and terminal equipment Download PDFInfo
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- CN110132425B CN110132425B CN201910500850.0A CN201910500850A CN110132425B CN 110132425 B CN110132425 B CN 110132425B CN 201910500850 A CN201910500850 A CN 201910500850A CN 110132425 B CN110132425 B CN 110132425B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0205—Mechanical elements; Supports for optical elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
- G01J5/068—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity by controlling parameters other than temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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Abstract
The invention is suitable for the technical fields of terahertz security check, substance detection, remote sensing, medical diagnosis and the like, and provides a radiometer front end and terminal equipment, which comprise: the upper side of the metal box body is provided with a groove, and a plurality of bosses are arranged in the groove; the two-stage low-noise amplifier chip and the wave detector chip are sequentially arranged on the corresponding bosses; the quartz probe is arranged in the groove of the metal box body and is positioned on the left side of the boss corresponding to the two-stage low-noise amplifier chip; the video amplifier is arranged in the groove of the metal box body and is positioned on the right side of the boss corresponding to the wave detector chip; electrical connection between adjacent devices; the temperature compensation bias circuit is connected with at least one low-noise amplifier chip in the two-stage low-noise amplifier chip connection, so that the size of each circuit can be obviously reduced, the temperature compensation bias circuit has higher integration level, can realize full-automatic assembly, reduces the assembly difficulty, and can realize engineering and batch production.
Description
Technical Field
The invention belongs to the technical fields of terahertz security inspection, substance detection, remote sensing, medical diagnosis and the like, and particularly relates to a radiometer front end and terminal equipment.
Background
Radiometers are high-sensitivity receivers for measuring thermal radiation of objects, and are the main tools of passive microwave remote sensing. At present, microwave radiometers based on ground (including ground and ship-borne platforms), air-based (including airplanes, missiles and balloon platforms), star-based (including satellites, spacecrafts and space shuttle platforms) and other carrying platforms are developed rapidly, and the radiometers are also developed from meter wave radiometers to present millimeter wave, sub-millimeter wave and even terahertz radiometers. Terahertz can penetrate through non-metal and non-polar materials with little attenuation, and terahertz imaging detection inside the materials is achieved.
The front end of the radiometer is used as an important component of a radiometer system, and the performance of the radiometer directly influences the indexes of the system. Currently studied terahertz circuit modules are mostly single-function modules, only single functions such as low-noise amplification or frequency mixing can be realized, and cascade on the basis of the single module to realize a system circuit at the front end of the terahertz radiometer, for example, a low-noise radiometer receiver in the prior art, the terahertz radiometer comprises a microstrip conversion integrated module, a filtering amplification integrated module and a single-chip amplification integrated module, all the modules are mutually independent and hermetically packaged, coaxial terminals are adopted for connection, the terahertz radiometer receiver and the detection and integration circuits are divided into two box body assemblies, the box bodies are connected through electric connectors, and therefore the integration degree is poor, and the assembly difficulty is large.
In addition, when an amplifier in the front end of the radiometer works in a constant current bias state, the output voltage of the radiometer is sensitive to the ambient temperature due to the variation of the gain of the amplifier and the detection sensitivity of the detector along with the ambient temperature, and the variation of the ambient temperature can cause the output voltage of the radiometer to generate obvious voltage drift, so that the judgment of the whole system on the substances can be influenced.
Disclosure of Invention
In view of this, embodiments of the present invention provide a radiometer front end and a terminal device, so as to solve the problems of poor integration level and high assembly difficulty in the prior art, and the problem that the radiometer output voltage generates significant voltage drift due to environmental temperature change.
A first aspect of an embodiment of the present invention provides a radiometer front-end, including:
the upper side of the metal box body is provided with a groove, a plurality of bosses are arranged in the groove, and the bosses are used for positioning the chip;
the two-stage low-noise amplifier chip and the wave detector chip are sequentially arranged on the corresponding bosses;
the quartz probe is arranged in the groove of the metal box body, positioned on the left side of the boss corresponding to the two-stage low-noise amplifier chip and used for receiving a signal radiated by an object;
the video amplifier is arranged in the groove of the metal box body and is positioned on the right side of the boss corresponding to the wave detector chip;
the quartz probe, the two-stage low-noise amplifier chip, the detector chip and adjacent devices in the video amplifier are electrically connected;
and the temperature compensation bias circuit is connected with at least one low-noise amplifier chip in the two-stage low-noise amplifier chip connection.
In one embodiment, the two-stage low noise amplifier chip includes: a first low noise amplifier chip and a second low noise amplifier chip;
the radiometer front-end structure further includes:
the conducting wires are arranged among bosses in the groove of the metal box body, among bosses corresponding to the quartz probe and the first low-noise amplifier chip, and among bosses corresponding to the wave detector chip and the video amplifier;
and adjacent devices are electrically connected through the conducting wire.
In one embodiment, the conductive wire comprises a conductive wire and a fused quartz substrate;
the quartz probe, the two-stage low-noise amplifier chip and the detector chip are arranged on the same plane, and the two-stage low-noise amplifier chip is arranged on the same plane.
In one embodiment, the quartz probe and the first low noise amplifier chip are electrically connected by bonding through a fused quartz substrate between the quartz probe and the first low noise amplifier chip;
the two-stage low-noise amplifier chip and the detector chip are electrically connected in a bonding mode through the fused quartz substrates corresponding to the two sides of the boss;
the detector chip and the video amplifier are electrically connected in a bonding mode through a conducting wire between the detector chip and the video amplifier. .
In one embodiment, the temperature compensation bias circuit comprises a first input terminal, a first temperature compensation circuit, a second temperature compensation circuit, an operational amplifier, a diode, a first resistor and a second resistor;
the input end of the first temperature compensation circuit and the input end of the second temperature compensation circuit are both connected with the first input end, and the output end of the first temperature compensation circuit and the output end of the second temperature compensation circuit are respectively connected with the positive input end and the negative input end of the operational amplifier; the output end of the first temperature compensation circuit or the output end of the second temperature compensation circuit is also connected with the control end of the low-noise amplifier chip;
the output end of the operational amplifier is grounded through a diode, a first resistor and a second resistor in sequence;
the common contact of the first resistor and the second resistor is connected with the input end of the low-noise amplifier chip;
the grounding end of the low-noise amplifier chip is grounded;
the low noise amplifier chip is the two-stage low noise amplifier chip, or is a first low noise amplifier chip, or is a second low noise amplifier chip.
In one embodiment, the first temperature compensation circuit comprises a second input end, a second output end, a first thermistor and a third resistor;
the second input end is connected with the first thermistor and the third resistor, wherein the second input end is connected with the second output end through the first thermistor and the third resistor.
In one embodiment, the second temperature compensation circuit comprises a third input end, a third output end, a second thermistor, a fourth resistor and a fifth resistor;
the third input end is connected with the first end of the fourth resistor;
the second end of the fourth resistor is respectively connected with the first end of the second thermistor and the first end of the fifth resistor;
a second end of the second thermistor and a second end of the fifth resistor are grounded;
the second end of the fourth resistor, the first end of the second thermistor and the first end of the fifth resistor are also connected with the third output end.
In one embodiment, the substrate of the two-stage low noise amplifier chip is an InP substrate.
In one embodiment, the operational amplifier in the video amplifier is adjusted by adjusting the amplification factor of the operational amplifier by using a bonding multi-resistance series thin film resistor and a bonding wire.
A second aspect of embodiments of the present invention provides a terminal device, including any one of the above-described radiometer front-ends.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: above-mentioned radiometer front end through with the device chipization to set up each chip in a metal box body, can show the volume that reduces each circuit, have higher integrated level, can realize full automatic assembly, set up the boss in addition, make partial chip can set up on corresponding boss, reduce the assembly degree of difficulty, can realize engineering and batch production. In addition, the temperature compensation bias circuit is additionally arranged, and the temperature compensation circuit based on the constant current source is adopted, so that the preheating stabilization time of the circuit can be obviously shortened, and the drift of the output voltage of the product along with the change of the environmental temperature can be obviously improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a cross-sectional view of a front end of a radiometer provided in accordance with embodiments of the present invention;
FIG. 2 is a schematic diagram of a cross-sectional view of a radiometer front-end (including a temperature compensated bias circuit) provided by embodiments of the present invention;
FIG. 3 is an exemplary diagram of a temperature compensated bias circuit provided by an embodiment of the present invention;
FIG. 4 is a schematic diagram of a first temperature compensation circuit according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a second temperature compensation circuit according to an embodiment of the invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic diagram of a front end of a radiometer according to an embodiment of the present invention, which is described in detail below.
The radiometer front-end may include: a metal can 101, a boss 102, a quartz probe 103, a two-stage low noise amplifier chip 104, a detector chip 105, a video amplifier 106, and a temperature compensation bias circuit 107.
The metal box body 101 is provided with a groove on the upper side, a plurality of bosses 102 are arranged in the groove, and the bosses 102 are used for positioning a chip;
the two-stage low noise amplifier chip 104 and the detector chip 105 are sequentially arranged on the corresponding bosses 102;
the quartz probe 103 is arranged in the groove of the metal box body 101, is positioned on the left side of the boss corresponding to the two-stage low-noise amplifier chip 104, and is used for receiving a signal radiated by an object;
the video amplifier 106 is arranged in the groove of the metal box body 101 and is positioned on the right side of the boss corresponding to the detector chip 105;
the quartz probe 103, the two-stage low noise amplifier chip 104, the detector chip 105 and the video amplifier 106 are electrically connected with one another;
and a temperature compensation bias circuit 107 connected to at least one of the two low noise amplifier chips 104.
Optionally, the quartz probe 103 is used for receiving a terahertz signal radiated by the object. The terahertz wave is an electromagnetic wave with the frequency within the spectrum range of 0.1THz-10THz and is positioned between millimeter waves and optical waves. Terahertz can penetrate through non-metallic and non-polar materials such as ceramics, textiles, cloth, paperboards, plastics, wood, walls and the like with little attenuation, and terahertz imaging detection inside the materials can be realized.
The low-noise amplifier chip 104 is used for amplifying received broadband useful signals, the two-stage noise amplifier chip can realize higher radio frequency gain, the received broadband useful signals are amplified, after the detector outputs video useful signals, the useful signal amplitude is higher, compared with constant thermal noise generated by the detector, the signal-to-noise ratio of the video signals is higher, and then the equivalent noise temperature sensitivity of the radiometer is improved.
The detector chip 105 is used to convert the received useful signal into a dc detection voltage.
The video amplifier 106 is used to further amplify and convert the detected voltage into a differential voltage output.
Above-mentioned radiometer front end through with the device chipization to set up each chip in a metal box body, can show the volume that reduces each circuit, have higher integrated level, can realize full automatic assembly, set up the boss in addition, make partial chip can set up on corresponding boss, reduce the assembly degree of difficulty, can realize engineering and batch production. In addition, the temperature compensation bias circuit is additionally arranged, and the temperature compensation circuit based on the constant current source is adopted, so that the preheating stabilization time of the circuit can be obviously shortened, and the drift of the output voltage of the product along with the change of the environmental temperature can be obviously improved.
Alternatively, as shown in fig. 2, the two-stage low noise amplifier chip 104 may include: a first low noise amplifier chip 1041 and a second low noise amplifier chip 1042.
As shown in fig. 2, the radiometer front-end may further include: a conductive line 108.
The conducting wires 108 are arranged between bosses in the groove of the metal box body 101, between the quartz probe 103 and a boss corresponding to the first low-noise amplifier chip 1041, and between a boss corresponding to the detector chip 105 and the video amplifier 106;
and adjacent devices are electrically connected through the conducting wire.
Optionally, the conductive line 108 includes a microstrip line and a fused silica substrate.
Optionally, the conductive line arranged between the adjacent devices of the quartz probe 103, the two-stage low noise amplifier chip 104, and the detector chip 105 may be a fused quartz substrate, and the conductive line arranged between the detector chip 105 and the video amplifier 106 may be a microstrip line.
Optionally, the adjacent devices are electrically connected by bonding via conductive wires between the adjacent devices.
Optionally, the quartz probe 103 and the first low noise amplifier chip 1041 are electrically connected by bonding through a fused quartz substrate between the quartz probe 103 and the first low noise amplifier chip 1041.
The two-stage low-noise amplifier chip 104 and the detector chip 105 are electrically connected in a bonding mode through the fused quartz substrates on two sides of the corresponding boss;
the detector chip 105 and the video amplifier 106 are electrically connected by a bonding method through a microstrip line between the detector chip 105 and the video amplifier 106.
Optionally, the electrical connection is realized by using a bonding wire in a bonding manner, and the bonding wire may include a gold wire, a gold ribbon, or an aluminum wire. Preferably, the electrical connection can be achieved using gold bonding wires.
Optionally, in the front end of the radiometer, chip boss positioning and conducting wire positioning are performed in the groove of the metal box body, so that full-automatic mounting of a chip, a conducting wire, a peripheral capacitor, a gasket and the like can be realized; after the shelving is finished, the product is supported by the aid of smaller bonding areas (less than or equal to 50 x 100 mm)2) And carrying out bonding alignment image recognition with a special positioning mark in the metal box body, thereby realizing full-automatic gold wire bonding.
Optionally, the substrate of the two-stage low noise amplifier chip 104 is an InP substrate, and compared with a GaAs device, the two-stage low noise amplifier chip with an InP substrate has a higher cutoff frequency and better noise characteristics.
Optionally, the operational amplifier in the video amplifier 106 may be adjusted in amplification factor by using a bonding multi-resistance series thin film resistor, and adjusting the resistance value by using a bonding wire. In the video amplification PCB circuit of the video amplifier 106, the adjustment of the output voltage interval of the passive detector, i.e. the radiometer, can be achieved by means of the operational amplifier. In the traditional method, a surface-mounted resistor is used for welding and replacing components, in the embodiment, the operational amplifier proportional resistor is changed into a bonding type multi-resistance series thin film resistor, so that the welding-free high-efficiency debugging test can be realized, the debugging efficiency can be greatly improved, the manual welding process is reduced, and the product reliability is improved.
Optionally, the connection manner of the temperature compensation bias circuit 107 may be: the temperature compensation bias circuit 107 may be connected to only the first low noise amplifier chip 1041, only the second low noise amplifier chip 1042, or both the first low noise amplifier chip 1041 and the second low noise amplifier chip 1042.
Optionally, as shown in fig. 3, the temperature compensation bias circuit 107 may include a first input end 1071, a first temperature compensation circuit 1072, a second temperature compensation circuit 1073, an operational amplifier 1074, a diode 1075, and a first resistor 1076 and a second resistor 1077;
the input end of the first temperature compensation circuit 1072 and the input end of the second temperature compensation circuit 1073 are both connected with the first input end 1071, and the output end of the first temperature compensation circuit 1072 and the output end of the second temperature compensation circuit 1073 are respectively connected with the positive input end and the negative input end of the operational amplifier 1074; the output end of the first temperature compensation circuit 1072 or the output end of the second temperature compensation circuit 1073 is further connected with the control end of the low noise amplifier chip;
the output end of the operational amplifier 1074 is grounded through a diode 1075, a first resistor 1076 and a second resistor 1077 in sequence;
a common contact of the first resistor 1076 and the second resistor 1077 is connected to an input terminal of the low noise amplifier chip;
the grounding end of the low-noise amplifier chip is grounded;
the low noise amplifier chip is the two-stage low noise amplifier chip 104, or the first low noise amplifier core 1041, or the second low noise amplifier chip 1042.
Optionally, the detector chip 105 outputs a voltage Av ═ K ═ G ═ β; and K is equivalent input power of the radiometer and is a constant value in a certain use scene. The value of G β needs to be as stable as possible if it is to be satisfied that the output voltage Av is constant.
The output voltage of the radiometer generally requires a temperature range of-20 deg.C and +40 deg.C and a voltage variation as small as possible. If the temperature compensation bias circuit is not used, the gain of low noise is reduced by 15% at 40 ℃ higher than 20 ℃ at normal temperature under the bias condition of the traditional constant current source, the gain of the two-stage low noise amplifier chip is reduced by 30%, the sensitivity beta of the detector chip is reduced by 40%, and the total output voltage is reduced by more than 50%; at the low temperature of-20 ℃, the gain of the two-stage low noise amplifier chip is improved by 30%, the sensitivity beta of the detector is improved by 40%, and the total output voltage is increased by more than 50%.
The radiometer output voltage drifts along with the temperature, so that the radiometer calibration voltage in the whole machine has deviation from the radiometer static working voltage in the actual whole machine in a high-temperature or low-temperature state, and the detected energy information of the external substances is difficult to effectively reflect.
After the temperature compensation bias circuit is adopted, the high-temperature and low-temperature bias conditions of the two-stage low-noise amplifier chip are changed, so that the high-temperature and low-temperature changes of the gain of the two-stage low-noise amplifier chip are compensated, the change trend of the detection sensitivity beta of the detector chip is counteracted, and the value of G beta is kept constant.
Optionally, as shown in fig. 4, the first temperature compensation circuit 1071 includes a second input terminal 401, a second output terminal 402, a first thermistor 403, and a third resistor 404;
the second input terminal 401 is connected to the first thermistor 403 and the third resistor 404, wherein the second input terminal 401 is connected to the second output terminal 402 through the first thermistor 403 and the third resistor 404.
Optionally, as shown in fig. 5, the second temperature compensation circuit 1072 may include a third input terminal 501, a third output terminal 502, a second thermistor 503, a fourth resistor 504, and a fifth resistor 505;
the third input terminal 501 is connected to a first terminal of the fourth resistor 504;
a second end of the fourth resistor 504 is connected to a first end of the second thermistor 503 and a first end of the fifth resistor 505, respectively;
a second end of the second thermistor 503 and a second end of the fifth resistor 505 are grounded;
the second terminal of the fourth resistor 504, the first terminal of the second thermistor 503 and the first terminal of the fifth resistor 505 are further connected to the third output terminal 502.
Optionally, in order to ensure the stability of the output voltage of the two-stage low noise amplifier chip after temperature compensation, the resistance value of the first thermistor is 1K ohm; the resistance value of the third resistor can be 100 ohms; the resistance value of the fourth resistor can be 10K ohms; the resistance value of the second thermistor can be 33K ohms; the resistance of the fifth resistor may be 9.1K ohms.
Alternatively, the equivalent resistance of the first temperature compensation circuit 1071, i.e., the first resistance, decreases with increasing temperature and increases with decreasing temperature. The Vi + voltage output of the second temperature compensation circuit 1072 decreases with increasing temperature and increases with decreasing temperature.
The change rule of temperature compensation is as follows: when the environment temperature T rises, the thermistor is reduced, the drain voltage Vd of the low-noise amplifier chip is reduced, the drain current Ids is increased, the grid voltage Vg of the low-noise amplifier chip is improved after the operational amplifier output Vo is subjected to self-adaptive adjustment, and the gain G of the low-noise amplifier chip is increased, so that the gain of the low-noise amplifier chip is increased by delta G, the sensitivity beta of the wave detector chip is compensated to be reduced by delta beta, and the variation of the output voltage Av of the wave detector chip is reduced. Experiments show that after the temperature compensation bias circuit improved by the embodiment is adopted, the variation rate of the Av at the high temperature of 40 ℃ and the low temperature of-20 ℃ is less than 10 percent compared with the normal temperature. Therefore, the temperature compensation bias circuit adopts a constant current source-based temperature compensation circuit scheme, so that the preheating stabilization time of the circuit can be obviously reduced, and the drift of the output voltage of a product along with the change of the ambient temperature can be obviously improved.
Above-mentioned radiometer front end through with the device chipization to set up each chip in a metal box body, can show the volume that reduces each circuit, have higher integrated level, can realize full automatic assembly, set up the boss in addition, make partial chip can set up on corresponding boss, reduce the assembly degree of difficulty, can realize engineering and batch production. In addition, the temperature compensation bias circuit is additionally arranged, and the temperature compensation circuit based on the constant current source is adopted, so that the preheating stabilization time of the circuit can be obviously shortened, and the drift of the output voltage of the product along with the change of the environmental temperature can be obviously improved.
Optionally, an embodiment of the present invention further provides a terminal device, where the terminal device may include any one of the foregoing radiometers front end, and has all the beneficial effects of the foregoing radiometer front end.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (7)
1. A radiometer front-end, comprising:
the upper side of the metal box body is provided with a groove, a plurality of bosses are arranged in the groove, and the bosses are used for positioning the chip;
the two-stage low-noise amplifier chip and the wave detector chip are sequentially arranged on the corresponding bosses;
the quartz probe is arranged in the groove of the metal box body, positioned on the left side of the boss corresponding to the two-stage low-noise amplifier chip and used for receiving a signal radiated by an object;
the video amplifier is arranged in the groove of the metal box body and is positioned on the right side of the boss corresponding to the wave detector chip;
the quartz probe, the two-stage low-noise amplifier chip, the detector chip and adjacent devices in the video amplifier are electrically connected;
the temperature compensation bias circuit is connected with at least one low-noise amplifier chip in the two-stage low-noise amplifier chip connection;
the temperature compensation bias circuit comprises a first input end, a first temperature compensation circuit, a second temperature compensation circuit, an operational amplifier, a diode, a first resistor and a second resistor;
the input end of the first temperature compensation circuit and the input end of the second temperature compensation circuit are both connected with the first input end, and the output end of the first temperature compensation circuit and the output end of the second temperature compensation circuit are respectively connected with the positive input end and the negative input end of the operational amplifier; the output end of the first temperature compensation circuit or the output end of the second temperature compensation circuit is also connected with the control end of the low-noise amplifier chip;
the output end of the operational amplifier is grounded through a diode, a first resistor and a second resistor in sequence; the common contact of the first resistor and the second resistor is connected with the input end of the low-noise amplifier chip; the grounding end of the low-noise amplifier chip is grounded; the low noise amplifier chip is the two-stage low noise amplifier chip, or a first low noise amplifier core, or a second low noise amplifier chip;
the first temperature compensation circuit comprises a second input end, a second output end, a first thermistor and a third resistor; the second input end is connected with the first thermistor and the third resistor, wherein the second input end is connected with the second output end through the first thermistor and the third resistor;
the second temperature compensation circuit comprises a third input end, a third output end, a second thermistor, a fourth resistor and a fifth resistor; the third input end is connected with the first end of the fourth resistor; the second end of the fourth resistor is respectively connected with the first end of the second thermistor and the first end of the fifth resistor; a second end of the second thermistor and a second end of the fifth resistor are grounded; the second end of the fourth resistor, the first end of the second thermistor and the first end of the fifth resistor are also connected with the third output end.
2. The radiometer front-end of claim 1, wherein said two-stage low noise amplifier chip comprises: a first low noise amplifier chip and a second low noise amplifier chip;
the radiometer front-end structure further includes:
the conducting wires are arranged among bosses in the groove of the metal box body, among bosses corresponding to the quartz probe and the first low-noise amplifier chip, and among bosses corresponding to the wave detector chip and the video amplifier;
and adjacent devices are electrically connected through the conducting wire.
3. The radiometer front-end of claim 2, wherein the conductive lines comprise microstrip lines and a fused silica substrate;
and the conductive lines arranged among the quartz probe, the two-stage low-noise amplifier chip and the adjacent devices of the detector chip are fused quartz substrates, and the conductive lines arranged between the detector chip and the video amplifier are microstrip lines.
4. The radiometer front-end of claim 3, wherein said quartz probe and said first low noise amplifier chip are electrically connected by bonding through a fused quartz substrate between said quartz probe and said first low noise amplifier chip;
the two-stage low-noise amplifier chip and the detector chip are electrically connected in a bonding mode through the fused quartz substrates corresponding to the two sides of the boss;
the detector chip and the video amplifier are electrically connected in a bonding mode through a conducting wire between the detector chip and the video amplifier.
5. The radiometer front-end of any of claims 1-4, wherein the substrate of the two-stage low noise amplifier chip is an InP substrate.
6. The radiometer front-end of any of claims 1-4, characterized in that the operational amplifier amplification in the video amplifier is adjusted by using a bonded multi-resistance series thin film resistor, and the resistance is adjusted by a bonding wire.
7. A terminal device comprising a radiometer front-end according to any of the preceding claims 1 through 6.
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| CN110187195A (en) * | 2019-06-11 | 2019-08-30 | 中国电子科技集团公司第十三研究所 | Radiometer front end and terminal device |
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| CN110231096B (en) * | 2019-06-11 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | Radiometer front-end structure and terminal equipment |
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| CN110132425A (en) | 2019-08-16 |
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