CN110455410B - Array resonant terahertz receiver and terahertz spectrometer device thereof - Google Patents

Array resonant terahertz receiver and terahertz spectrometer device thereof Download PDF

Info

Publication number
CN110455410B
CN110455410B CN201910799322.XA CN201910799322A CN110455410B CN 110455410 B CN110455410 B CN 110455410B CN 201910799322 A CN201910799322 A CN 201910799322A CN 110455410 B CN110455410 B CN 110455410B
Authority
CN
China
Prior art keywords
resonant
terahertz
arm
array
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910799322.XA
Other languages
Chinese (zh)
Other versions
CN110455410A (en
Inventor
苏润丰
陈健
涂学凑
贾小氢
吴敬波
张彩虹
康琳
金飚兵
许伟伟
吴培亨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University
Original Assignee
Nanjing University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University filed Critical Nanjing University
Priority to CN201910799322.XA priority Critical patent/CN110455410B/en
Publication of CN110455410A publication Critical patent/CN110455410A/en
Application granted granted Critical
Publication of CN110455410B publication Critical patent/CN110455410B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J2003/006—Fundamentals or review articles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G01J2003/2813—2D-array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J2005/106—Arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J2005/123—Thermoelectric array

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The invention discloses an array resonant terahertz receiver and a terahertz spectrometer device thereof. The terahertz spectrometer device receives terahertz wave signals based on the array resonant terahertz receiver. The array resonant terahertz receiver comprises a plurality of groups of antenna arrays with different resonant frequencies. The antenna array is composed of resonant units arranged in NxM rows and columns. The resonance unit is a double-opening resonance ring structure based on an inductance-capacitance resonance principle. The center part of the double-opening resonant ring structure of the most central resonant unit of the antenna array is provided with a superconducting niobium nitride thermionic bolometer, and the superconducting niobium nitride thermionic bolometer is bridged by the superconducting niobium nitride thermionic bolometer. Experiments prove that the terahertz spectrum signal detection device has high sensitivity and high response speed when detecting terahertz spectrum signals, is easy to integrate on a chip, and has the advantages of simple and convenient preparation process, low cost, simple system and easy popularization.

Description

Array resonant terahertz receiver and terahertz spectrometer device thereof
Technical Field
The invention relates to terahertz spectrum detection based on a superconducting niobium nitride bolometer.
Background
Terahertz (THz) waves, generally referred to as electromagnetic waves with a frequency between 0.1THz and 30 THz. The terahertz wave has the characteristics of low photon energy, penetrability, fingerprint spectrum and the like, so that the terahertz wave is widely applied to the fields of radio astronomy, security inspection imaging, biological medicine and the like. In recent decades, people have been studying terahertz waves, different types of terahertz detectors and radiation sources have been produced, and various terahertz spectrometer detection technologies have been produced correspondingly.
The terahertz direct detector based on the superconducting niobium nitride (NbN) bolometer (HEB) has high speed (response time about 35ps) and high sensitivity (noise equivalent power NEP is 10)-13～10-12W/√ Hz), is a powerful tool for detecting weak terahertz short pulse signals. The terahertz metamaterial is an artificial electromagnetic metamaterial applied to a terahertz waveband and composed of electrically small-sized periodic repeating units. The terahertz metamaterial with the split-ring structure can be prepared into a narrow-band inductance-capacitance (LC) resonator, and has the advantages of high Q value, easiness in planar integration and the like. With the development of terahertz technology, the demand for on-chip integrated terahertz spectrometers is gradually increasing. The traditional terahertz spectrum detection mode has an interferometer, such as a Michelson interferometer, and a set of displacement platform optical system for controlling movement is needed, so that the terahertz spectrum detection mode is not beneficial to being carried on a space vehicle. Time-domain terahertz spectrometers are newer ways of detecting terahertz spectra, but require expensive sub-picosecond or femtosecond lasers. Schottky diode (Schottky diode) based detectors also have faster speed but relatively low sensitivity with a noise equivalent power NEP of about 5.0 x 10-10W/Hz1/2And the detection capability of a weak terahertz pulse signal is inferior to that of a superconducting niobium nitride (NbN) bolometer (HEB).
Disclosure of Invention
The problems to be solved by the invention are as follows: meanwhile, the sensitivity and the response speed of the terahertz signal spectrum detection are improved.
In order to solve the problems, the invention adopts the following scheme:
the array resonant terahertz receiver comprises a plurality of resonant units; the resonant units are arranged in NxM rows and columns to form an antenna array, and the antenna array comprises an upper arm, a lower arm, a middle arm and two side arms; the upper arm and the lower arm are parallel to each other, and the middle arm and the side arms are parallel to each other; the middle arm is positioned between the two side arms, and a cavity is reserved between the middle arm and the side arms; an opening is reserved between the two side arms, so that the side arms are divided into two sections which are respectively connected with the upper arm and the lower arm, and the resonance unit is in two opposite C-shaped structures; in the same row, one side of each resonance unit is connected with the adjacent resonance unit on one side in series through the upper arm bridge between the upper arms, and the other side of each resonance unit is connected with the adjacent resonance unit on the other side in series through the lower arm bridge between the lower arms; the central resonance unit is a resonance unit positioned in the center of the antenna array; a gap is arranged on the middle arm of the central resonance unit, so that the middle arm is divided into two sections connecting the upper arm and the lower arm; a superconducting niobium nitride thermionic bolometer is arranged in the gap; the superconducting niobium nitride thermionic bolometer bridges two sections of middle arms respectively connected with the upper arm and the lower arm in the central resonance unit, and is connected in series through all the resonance units in the same row, one end of the series connection is a grounding part, and the other end is used as a detection connection electrode.
Further, the array resonant terahertz receiver further comprises a substrate; the antenna array is prepared on the substrate in a mode of mask sputtering of a gold film.
Further, according to the array resonant terahertz receiver provided by the invention, the antenna arrays are provided with a plurality of groups; the resonant units in the same group of antenna arrays have the same resonant frequency, and the resonant units in different groups of antenna arrays have different resonant frequencies.
The terahertz spectrograph device comprises a low-temperature vacuum optical Dewar, a hyper-hemispherical silicon lens, an array resonant terahertz receiver and a reading circuit, wherein the low-temperature vacuum optical Dewar is provided with a transparent window, so that terahertz waves can enter the interior of the low-temperature vacuum optical Dewar through the transparent window; the hyper-hemispherical silicon lens is used for focusing terahertz waves entering the low-temperature vacuum optical Dewar; the array resonant terahertz receiver is tightly attached to the back plane of the hyper-hemispherical silicon lens and comprises a plurality of resonant units; the resonant units are arranged in NxM rows and columns to form an antenna array, and the antenna array comprises an upper arm, a lower arm, a middle arm and two side arms; the upper arm and the lower arm are parallel to each other, and the middle arm and the side arms are parallel to each other; the middle arm is positioned between the two side arms, and a cavity is reserved between the middle arm and the side arms; an opening is reserved between the two side arms, so that the side arms are divided into two sections which are respectively connected with the upper arm and the lower arm, and the resonance unit is in two opposite C-shaped structures; in the same row, one side of each resonance unit is connected with the adjacent resonance unit on one side in series through the upper arm bridge between the upper arms, and the other side of each resonance unit is connected with the adjacent resonance unit on the other side in series through the lower arm bridge between the lower arms; the central resonance unit is a resonance unit positioned in the center of the antenna array; a gap is arranged on the middle arm of the central resonance unit, so that the middle arm is divided into two sections connecting the upper arm and the lower arm; a superconducting niobium nitride thermionic bolometer is arranged in the gap; the superconducting niobium nitride thermionic bolometer bridges two sections of middle arms respectively connected with the upper arm and the lower arm in the central resonance unit and is connected in series through all the resonance units in the same row, one end of the series connection is a grounding part, and the other end is used as a detection connection electrode; the grounding part is grounded; the detection connecting electrode is connected with the readout circuit; the readout circuit is used for amplifying the current response signal of the antenna array and converting the current response signal into a voltage signal.
Further, according to the terahertz spectrometer device of the present invention, the array resonant terahertz receiver further includes a substrate; the antenna array is prepared on the substrate in a mode of mask sputtering of a gold film.
Further, according to the terahertz spectrometer device, the antenna arrays are provided with a plurality of groups; the resonant units in the same group of antenna arrays have the same resonant frequency, and the resonant units in different groups of antenna arrays have different resonant frequencies; each antenna array corresponds to a group of readout circuits.
Further, according to the terahertz spectrometer apparatus of the present invention, the readout circuit is a low-noise, broadband current-to-voltage conversion amplifier and provides a voltage bias for the superconducting niobium nitride thermionic bolometer in the antenna array.
The invention has the following technical effects:
1. the method is easy to integrate on chip, simple and convenient in preparation process, low in cost, simple in system and easy to popularize.
2. Experiments prove that the terahertz spectrum signal detection device has high sensitivity and high response speed when detecting terahertz spectrum signals.
Drawings
Fig. 1 is a schematic structural diagram of an antenna array according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a resonant unit according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a central resonance unit in an embodiment of the invention.
In fig. 1, 2, and 3, 1 is a resonance unit, 10 is a center resonance unit, 11 is an upper arm, 12 is a lower arm, 13 is a middle arm, 14 is a side arm, 16 is an opening, 19 is a gap, 21 is an upper arm bridge, 22 is a lower arm bridge, 24 is a probe connection electrode, 25 is a ground, and 30 is a superconducting niobium nitride thermionic bolometer.
Fig. 4 is a schematic structural diagram of a terahertz spectrometer apparatus according to an embodiment of the invention.
Fig. 5 is a circuit diagram of a sensing circuit according to an embodiment of the present invention.
In fig. 4, 91 is a low temperature vacuum optical dewar, 911 is a transparent window, 92 is a super hemispherical silicon lens, 931 is an antenna array, 932 is an electrode connection line, 933 is a ground line, 94 is a readout circuit, 941 is a low noise broadband operational amplifier, 942 is a resistor, and 943 is a voltage bias source.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 4, a terahertz spectrometer device includes a low-temperature vacuum optical dewar 91, a hyper-hemispherical silicon lens 92, an array resonant terahertz receiver, and a readout circuit 94. The low-temperature vacuum optical Dewar 91 is an internal vacuum tank body realized by a metal shell, and can adjust the temperature between 2K and 20KDegree of vacuum of 10-5Pa. In order to enable the terahertz wave signal to enter the low-temperature vacuum optical dewar 91, an optical transparent window 911 capable of transmitting the terahertz wave is arranged on the wall of the tank body of the low-temperature vacuum optical dewar 91. The transparent window 911 is made of Mylar film. The hyper-hemispherical silicon lens 92 is used for collecting and focusing terahertz waves entering the low-temperature vacuum optical dewar 91 through the transparent window 911, and is installed in the low-temperature vacuum optical dewar 91 through an oxygen-free copper bracket. The array resonant terahertz receiver is tightly attached to the back plane of the hyper-hemispherical silicon lens 92. The array resonant terahertz receiver includes a substrate and a plurality of antenna arrays 931 disposed on the substrate, and in this embodiment, includes four antenna arrays 931.
The antenna array 931, as shown in fig. 1, is composed of N × M resonant units 1 arranged in N × M rows and columns. The resonant unit 1 is a double-opening resonant ring structure based on the inductor-capacitor resonance principle, and as shown in fig. 2, includes an upper arm 11, a lower arm 12, a middle arm 13, and two side arms 14. The upper arm 11 and the lower arm 12 are parallel to each other, and the intermediate arm 13 and the side arms 14 are parallel to each other. The middle arm 13 is located between the two side arms 14, and a cavity 15 is left between the middle arm 13 and the side arms 14. An opening 16 is left between the two side arms 14, so that the side arms 14 are divided into two sections respectively connecting the upper arm 11 and the lower arm 12, and the resonant unit 1 is in a two-back C-shaped structure, thereby forming a double-opening resonant ring structure. In the same row, the resonant cells 1 are connected in series with the resonant cells 1 adjacent to each other on one side through the upper arm bridges 21 between the upper arms 11 and connected in series with the resonant cells 1 adjacent to each other on the other side through the lower arm bridges 22 between the lower arms 12. The central resonant cell 10 is the resonant cell 1 located in the center of the antenna array, i.e. the resonant cells located in the central row and column of the antenna array. Specifically, in the antenna array arranged in N rows × M columns in this embodiment, if N is an even number, the central row is the nth/2 th row or the nth/2 + 1th row; if N is an odd number, the center row is (N + 1)/2; if M is an even number, the central column is the M/2 th column or the M/2+ 1th column; if M is an odd number, the central column is (M + 1)/2. As shown in fig. 3, the middle arm 13 of the central resonator unit 10 is provided with a gap 19 so that the middle arm 13 is divided into two sections connecting the upper arm 11 and the lower arm 12. A superconducting niobium nitride thermionic bolometer 30 is disposed within the gap 19. The superconducting niobium nitride thermionic bolometer 30 is a thin film made of superconducting niobium nitride and having a thickness of 3.0-5.0 nm, bridges two intermediate arms 13 respectively connecting the upper arm 11 and the lower arm 12 in the central resonance unit 10, and is connected in series through all the resonance units 1 in the same row, wherein one end of the series connection is a grounding part 25, and the other end is a detection connection electrode 24. That is, the detection connection electrode 24 and the ground 25 are respectively located at both ends of the center row where the center resonance unit 10 is located. In this embodiment, N is 30, and M is 40, that is, the antenna array of this embodiment is formed by 1200 resonant units 1 arranged in 30 rows × 40 columns.
The resonant unit 1 has a specific resonant frequency. The resonant cells 1 in the same group of antenna arrays have the same resonant frequency, which is also the resonant frequency of the antenna array. The resonant cells 1 in different groups of antenna arrays have different resonant frequencies. The resonance frequency of the resonance unit 1 falls within the frequency range of terahertz. In this embodiment, the resonant frequencies of the resonant units 1 in the four antenna arrays are respectively: 0.65THz, 0.79THz, 0.89THz and 1.05 THz. The resonance frequency of the resonance unit 1 is determined by the dimensions of the components of the resonance unit 1. In this embodiment, the resonant unit 1 of the antenna array with the resonant frequency of 0.65THz has the following dimensions: the overall height h1 of the resonant unit 1 is 50.0 μm, the overall width w1 is 32.0 μm, the upper arm 11 and the lower arm 12 have the same width h2 is 11.5 μm, the middle arm 13 and the side arms 14 have the same width w2 is 6.0 μm, the width h3 of the opening 16 of the side arm 14 is 7.0 μm, the center-to-center distance between the rows of the resonant unit 1 is 70.0 μm, the center-to-center distance between the columns is 44.0 μm, the width h0 of the gap 19 of the central resonant unit 10 is 0.20 μm, and the width w0 of the superconducting niobium nitride thermionic bolometer 30 is 1.80 μm.
In this embodiment, the substrate of the array resonant terahertz receiver is a square high-resistance silicon wafer made of high-resistance silicon and having a thickness of 350 μm and a side length of 4 mm. The bottom of the substrate of the square high-resistance silicon wafer is glued in the center of the back surface of the hyper-hemispherical silicon lens 92 by using low-temperature glue, and the back surface of the hyper-hemispherical silicon lens 92 is a circular plane with the diameter of 9 mm. The four groups of antenna arrays are prepared on a substrate of a square high-resistance silicon wafer in a mode of a gold film with the thickness of 200nm through mask sputtering, and a grounding wire 933 and four electrode connecting wires 932 are arranged on the substrate. The ground line 933 is connected to the ground portions 25 of the four antenna arrays. The four electrode connecting lines 932 correspond to the four antenna arrays and are respectively connected to the detecting connecting electrodes 24 of one antenna array. Four electrode connecting wires 932 correspond to the four sets of readout circuits 94 and are respectively connected to one set of readout circuits 94, so that the four sets of antenna arrays are respectively connected to one set of readout circuits 94. Ground line 933 and the ground line of sense circuit 94 are connected to ground in common.
In this embodiment, the sensing circuit 94 is a low noise, wide bandwidth current-to-voltage conversion amplifier and provides voltage bias for the antenna array, and its specific structure is shown in fig. 5. The sensing circuit 94 includes a low noise broadband operational amplifier 941, a resistor 942, and a voltage bias source 943. The low noise wide band op amp 941 and resistor 942 form a negative feedback circuit. The negative feedback circuit provides voltage bias to the antenna array by connecting to a voltage bias source 943. The readout circuit 94 thus amplifies and converts the current response signal of the superconducting niobium nitride thermionic bolometer 30 in the antenna array into a voltage signal output.
The working principle of the embodiment is as follows:
the terahertz waves are incident into an optical transparent window of the low-temperature vacuum optical Dewar 91 and are further converged onto each antenna array of the array resonant terahertz receiver by the focusing of the hyper-hemispherical silicon lens 92. When the frequency of the terahertz signal to be detected is consistent with the resonant frequency of one group of antenna arrays and the polarization direction of the electric field is vertical to the direction of the double-opening ring electric wall, the group of antenna arrays are in a strong electric field resonance mode and are equivalent to a narrow-band LC resonator. At this time, the group of antenna arrays absorbs the terahertz signal to be detected most strongly, and is detected by the superconducting niobium nitride thermionic bolometer 30 to the greatest extent, and is converted into a current response signal, and the current response signal is output to the readout circuit 94 through the detection connecting electrode 24 and the electrode connecting line 932, and is amplified by the readout circuit 94 and converted into a voltage signal for output. When the readout circuit 94 outputs a voltage signal, the resonant frequency of the antenna array corresponding to the readout circuit 94 is the frequency of the detected terahertz wave.
The terahertz wave detector has high sensitivity and quick response to detection of terahertz waves. Through experiments, experimental test data show that the best noise equivalent power NEP measured by the terahertz wave with the frequency of 0.65THz is about 4.0 multiplied by 10- 12W/Hz1/2。
In addition, it should be noted that, in the embodiment, the array antennas included in the array resonator type terahertz receiver are four groups, and those skilled in the art understand that the array antennas included in the array resonator type terahertz receiver may also be one group, two groups, or other numbers. The resonant elements in the antenna array are arranged in 30 x 40 rows and columns, although those skilled in the art will appreciate that the resonant elements may be arranged in other numbers of rows and columns. The resonant frequency of the antenna array is determined by the size of each component of the resonant unit 1, and those skilled in the art can obtain various antenna arrays with different resonant frequencies after adjusting according to the size parameters of the resonant unit 1, so as to detect terahertz wave signals with different frequencies.

Claims (7)

1. An array resonance type terahertz receiver is characterized by comprising a plurality of resonance units (1); a resonant unit (1) is arranged
Figure DEST_PATH_IMAGE002
The antenna array is formed by arranging rows and columns and comprises an upper arm (11), a lower arm (12), a middle arm (13) and two side arms (14); the upper arm (11) and the lower arm (12) are parallel to each other, and the middle arm (13) and the side arms (14) are parallel to each other; the middle arm (13) is positioned between the two side arms (14), and a cavity (15) is reserved between the middle arm (13) and the side arms (14); an opening (16) is reserved between the two side arms (14), so that the side arms (14) are divided into two sections which are respectively connected with the upper arm (11) and the lower arm (12), and the resonance unit (1) is in a two-back C-shaped structure; in the same row, one side of each resonant unit (1) is connected in series with the adjacent resonant unit (1) at one side through an upper arm bridge (21) between the upper arms (11), and the other side of each resonant unit (1) is connected in series with the adjacent resonant unit (1) at the other side through a lower arm bridge (22) between the lower arms (12); the central resonance unit (10) is located atA resonant unit (1) at the center of the antenna array; the middle arm (13) of the central resonance unit (10) is provided with a gap (19) so that the middle arm (13) is divided into two sections connecting the upper arm (11) and the lower arm (12); a superconducting niobium nitride thermionic bolometer (30) is arranged in the gap (19); the superconducting niobium nitride thermionic bolometer (30) bridges two sections of middle arms (13) which are respectively connected with an upper arm (11) and a lower arm (12) in a central resonance unit (10), and is connected in series through all resonance units (1) in the same row, wherein one end of the series connection is a grounding part (25), and the other end of the series connection is used as a detection connection electrode (24).
2. The array resonant terahertz receiver of claim 1, further comprising a substrate; the antenna array is prepared on the substrate in a mode of mask sputtering of a gold film.
3. The array resonant terahertz receiver of claim 1, wherein the antenna array has a plurality of groups; the resonant units (1) in the same group of antenna arrays have the same resonant frequency, and the resonant units (1) in different groups of antenna arrays have different resonant frequencies.
4. A terahertz spectrograph device is characterized by comprising a low-temperature vacuum optical Dewar, a hyper-hemispherical silicon lens, an array resonant terahertz receiver and a reading circuit, wherein the low-temperature vacuum optical Dewar is provided with a transparent window, so that terahertz waves can enter the interior of the low-temperature vacuum optical Dewar through the transparent window; the hyper-hemispherical silicon lens is used for focusing terahertz waves entering the low-temperature vacuum optical Dewar; the array resonant terahertz receiver is tightly attached to the back plane of the hyper-hemispherical silicon lens and comprises a plurality of resonant units (1); a resonant unit (1) is arranged
Figure 144116DEST_PATH_IMAGE002
The antenna array is formed by arranging rows and columns and comprises an upper arm (11), a lower arm (12), a middle arm (13) and two side arms (14); the upper arm (11) and the lower arm (12) are parallel to each other, and the middle arm (13) and the side arms (14) are parallel to each otherA row; the middle arm (13) is positioned between the two side arms (14), and a cavity (15) is reserved between the middle arm (13) and the side arms (14); an opening (16) is reserved between the two side arms (14), so that the side arms (14) are divided into two sections which are respectively connected with the upper arm (11) and the lower arm (12), and the resonance unit (1) is in a two-back C-shaped structure; in the same row, one side of each resonant unit (1) is connected in series with the adjacent resonant unit (1) at one side through an upper arm bridge (21) between the upper arms (11), and the other side of each resonant unit (1) is connected in series with the adjacent resonant unit (1) at the other side through a lower arm bridge (22) between the lower arms (12); the central resonance unit (10) is a resonance unit (1) located in the center of the antenna array; the middle arm (13) of the central resonance unit (10) is provided with a gap (19) so that the middle arm (13) is divided into two sections connecting the upper arm (11) and the lower arm (12); a superconducting niobium nitride thermionic bolometer (30) is arranged in the gap (19); the superconducting niobium nitride thermionic bolometer (30) bridges two sections of middle arms (13) which are respectively connected with an upper arm (11) and a lower arm (12) in a central resonance unit (10), and is connected in series through all resonance units (1) in the same row, wherein one end of the series connection is a grounding part (25), and the other end of the series connection is used as a detection connection electrode (24); the grounding part (25) is grounded; the detection connecting electrode (24) is connected with the readout circuit; the readout circuit is used for amplifying the current response signal of the antenna array and converting the current response signal into a voltage signal.
5. The terahertz spectrometer device of claim 4, wherein the array resonant terahertz receiver further comprises a substrate; the antenna array is prepared on the substrate in a mode of mask sputtering of a gold film.
6. The terahertz spectrometer apparatus of claim 4, wherein the antenna array has a plurality of groups; the resonant units (1) in the same group of antenna arrays have the same resonant frequency, and the resonant units (1) in different groups of antenna arrays have different resonant frequencies; each antenna array corresponds to a group of readout circuits.
7. The terahertz spectrometer apparatus of claim 4, wherein the readout circuit is a low noise, broadband current-to-voltage conversion amplifier and provides a voltage bias for superconducting niobium nitride thermionic bolometers in the antenna array.
CN201910799322.XA 2019-08-28 2019-08-28 Array resonant terahertz receiver and terahertz spectrometer device thereof Active CN110455410B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910799322.XA CN110455410B (en) 2019-08-28 2019-08-28 Array resonant terahertz receiver and terahertz spectrometer device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910799322.XA CN110455410B (en) 2019-08-28 2019-08-28 Array resonant terahertz receiver and terahertz spectrometer device thereof

Publications (2)

Publication Number Publication Date
CN110455410A CN110455410A (en) 2019-11-15
CN110455410B true CN110455410B (en) 2021-10-26

Family

ID=68489519

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910799322.XA Active CN110455410B (en) 2019-08-28 2019-08-28 Array resonant terahertz receiver and terahertz spectrometer device thereof

Country Status (1)

Country Link
CN (1) CN110455410B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112382859A (en) * 2020-10-31 2021-02-19 华南理工大学 Double-capacitor terahertz metamaterial electric regulation and control device structure
CN112540056B (en) * 2020-12-07 2021-11-16 南京大学 Array terahertz receiving device and reading device thereof
CN114914670A (en) * 2022-06-29 2022-08-16 四川太赫兹通信有限公司 Terahertz electronic control coding antenna unit and terahertz electronic control coding antenna

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4041893B2 (en) * 2003-11-12 2008-02-06 独立行政法人情報通信研究機構 Method for producing hot electron bolometer using fluorine radical and hot electron bolometer
CN101452032A (en) * 2008-12-24 2009-06-10 南京大学 Superconductivity niobium nitride thermion receiving detection device for detecting terahertz signal
JP2014163674A (en) * 2013-02-21 2014-09-08 Seiko Epson Corp Terahertz wave detection apparatus, camera, imaging device, and measuring device
WO2014135749A1 (en) * 2013-03-05 2014-09-12 Teknologian Tutkimuskeskus Vtt Superconducting thermal detector (bolometer) of terahertz (sub-millimeter wave) radiation
CN203443670U (en) * 2013-03-25 2014-02-19 南京大学 Reading circuit for Nb[5]N[6] room-temperature terahertz detector linear array
CN103984124B (en) * 2014-05-15 2017-01-25 东南大学 Multi-frequency response TeraHertz wave modulator
CN108279072A (en) * 2018-01-18 2018-07-13 南京大学 A kind of direct detector of based superconductive niobium nitride multiplexing heat, microwave and Terahertz

Also Published As

Publication number Publication date
CN110455410A (en) 2019-11-15

Similar Documents

Publication Publication Date Title
CN110455410B (en) Array resonant terahertz receiver and terahertz spectrometer device thereof
US7280078B2 (en) Sensor for detecting high frequency signals
US7851761B2 (en) Multi-band terahertz receiver and imaging device
Carranza et al. Terahertz metamaterial absorbers implemented in CMOS technology for imaging applications: scaling to large format focal plane arrays
Nguyen et al. Broadband THz uncooled antenna-coupled microbolometer array—electromagnetic design, simulations and measurements
RU2218560C2 (en) Submillimeter range system forming image
US8450690B2 (en) Thermal imager using metamaterials
JP4341573B2 (en) Radio wave transmission / reception module and imaging sensor using the radio wave transmission / reception module
US8872112B2 (en) Hybrid THz imaging detector with vertical antenna and sub-pixel suspended MEMS thermal sensor and actuator
US7812958B2 (en) Interferential spectroscopy detector and camera
US11159246B2 (en) Grating- and fiber-coupled multi-beam coherent receiving system in mid- and far-infrared band
CN102680091B (en) High-speed detection method and device for terahertz
Doi et al. Large-format and compact stressed Ge: Ga array for the ASTRO-F (IRIS) mission
US8306786B1 (en) Detector array for compressive sensing
US20110198499A1 (en) Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same
Arzhannikov et al. Eight-Channel Polychromator for Spectral Measurements in the Frequency Band of 0.1-0.6 THz
US9322911B1 (en) Passive phased array imager using sub-phase sampling CMOS detectors and a smart ROIC
CN207475555U (en) A kind of ultra wide band multichannel optoelectronic integration detector for microwave photon system
Sesek et al. A microbolometer system for radiation detection in the THz frequency range with a resonating cavity fabricated in the CMOS technology
EP4417948A1 (en) Terahertz focal plane imaging detector, imaging system and imaging method
Simoens et al. Antenna-coupled microbolometer based uncooled 2D array and camera for 2D real-time terahertz imaging
Rosenthal et al. 16 x 25 Ge: Ga detector arrays for FIFI LS
Jiang et al. The design of a bowtie antenna for 0.65 thz detection
Doi et al. Compact two-dimensional array of Stressed Ge: Ga detectors
Zhou et al. A uncooled multi-band metamaterial detector focal plane array for real-time multi-spectral terahertz wave sensing and imaging

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant