CN101452032A - Superconductivity niobium nitride thermion receiving detection device for detecting terahertz signal - Google Patents
Superconductivity niobium nitride thermion receiving detection device for detecting terahertz signal Download PDFInfo
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- CN101452032A CN101452032A CNA2008102429016A CN200810242901A CN101452032A CN 101452032 A CN101452032 A CN 101452032A CN A2008102429016 A CNA2008102429016 A CN A2008102429016A CN 200810242901 A CN200810242901 A CN 200810242901A CN 101452032 A CN101452032 A CN 101452032A
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- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 238000001514 detection method Methods 0.000 title claims description 17
- 230000010355 oscillation Effects 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 5
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- 238000001020 plasma etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000000609 electron-beam lithography Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000005057 refrigeration Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000002156 mixing Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
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Abstract
The invention discloses a superconducting niobium nitride thermion reception detecting device for detecting THZ signals, comprising an incident signal source, a local oscillation signal source, a beam splitter, a hyper-hemispherical lens, a bias supply, a Dewar, a low temperature and normal temperature amplifier, a filter, a power meter and a superconducting niobium nitride thermion device. The detected signal is emitted by the incident signal source, through the beam splitter, enters Si hyper-hemispherical lens together with the local oscillation signal through a window of the Dewar, then converges to the superconducting niobium nitride thermion device through the Si hyper-hemispherical lens. DC bias provided by an offset voltage source is provided to the niobium nitride thermion device by a T-bias joint, the detected intermediate frequency signal is amplified by the low temperature and normal temperature amplifier, filtered by the filter, read by the power meter. The inventive superconducting niobium nitride thermion reception detecting device is high in sensitivity, low in required local oscillation power, wide in intermediate frequency bandwidth and the like.
Description
Technical field
The present invention relates to a kind of superconduction niobium nitride (NbN) thermoelectron (HEB) receiving detection device, particularly a kind of superconduction niobium nitride (NbN) thermoelectron (HEB) receiving detection device that detects terahertz wave band.
Background technology
The reception detection technique of THz wave (THz) section detects in the researchs such as (formation of ozonosphere and differentiation) in radio astronomy, atmospheric physics, atmospheric environment has important effect, in the biosome Non-Destructive Testing, aspects such as following wireless network also have good application potential.
In the nearly more than ten years, because the high speed development of film preparing technology and Micrometer-Nanometer Processing Technology has promoted developing rapidly of superconduction hot-electron device greatly.Superconduction HEB device is by absorbing external irradiation, produces nonequilibrium thermoelectron in the superconduction ultrathin film, and the electrical property of device changes, thereby realizes the detection to signal.Superconduction HEB frequency mixer mainly comprises two parts: one is the superconducting microbridge district in order to detection THz signal, and another is the flat plane antenna that connects the normal metal material in microbridge district.The effect of flat plane antenna is the THz signal that collected radiation is come, and imports the superconducting microbridge district.From the working mechanism of device, superconduction HEB can be divided into two classes, a class is a diffusion refrigeration mode device, the length of this class HEB requirement device is that the length (being about 0.1 μ m) in superconducting microbridge district must be less than the thermal diffusion length of electronics.Another kind of is phonon refrigeration mode HEB, claims the lattice refrigeration mode again, and the working mechanism of this class device is that device absorbs external irradiation, produces the thermoelectron that is higher than the phonon temperature, electronics and phonon interaction, and positive energy exchange, phonon transfer energy to substrate again.So for the HEB of phonon refrigeration mode, ultra-thin superconducting thin film is the part of device most critical.Superconducting thin film is thin more, and energy-exchange time is short more, and the HEB frequency mixer just can obtain wideer intermediate-frequency bandwidth.NbN HEB frequency mixer with super band, is considered to best low noise at 1THz at present, high-resolution THz detector, and its sensitivity can reach 10 times quantum limit (hv/kT, h are Planck constant, and k is Boltzmann's constant), and is expected to do lowlyer.At present, many in the world developed countries have all dropped into the research that a large amount of people, financial resources amount are devoted to such device, the HEAT project in the South Pole for example, the SAFIR plan of U.S. NASA, the ESORUT project in Europe etc.
Summary of the invention
Goal of the invention: the purpose of this invention is to provide superconduction niobium nitride (NbN) thermoelectron (HEB) receiving detection device of a kind of high sensitivity, terahertz wave band, advantage such as it is low that this device has required local oscillation power, and midband is wide.
Technical scheme: the present invention's design has also prepared a kind of high sensitivity superconduction niobium nitride (NbN) thermoelectron (HEB) receiving detection device that detects the Terahertz frequency band signals, and this device comprises: incident signal source, local oscillation signal source, beam splitter, hyper-hemispherical lens, bias supply, Dewar, low temperature and ambient temperature amplifier, wave filter, power meter and superconductivity niobium nitride thermion device; Detected signal is sent by incident signal source, behind beam splitter, be incident on the Si hyper-hemispherical lens with the window of local oscillation signal by refrigeration machine, converge on the niobium nitride thermion device through the Si hyper-hemispherical lens again, the direct current biasing that is provided by bias voltage source is provided on the niobium nitride thermion device by T type offset adapter, the detected intermediate-freuqncy signal of niobium nitride thermion device is amplified, behind the filter filtering, is read by power meter via low temperature and ambient temperature amplifier.
The superconductivity niobium nitride thermion device is realized by following technology: the growing technology of the ultra-thin niobium nitride superconducting thin film of (1) 3-5nm thickness (this technology is applied for a patent: application number is 200710132283.5); (2) micro-processing technology of superconductivity niobium nitride thermion device preparation.
Utilize the Y factor method, measured the high frequency response characteristic of the NbN HEB receiver of preparation with cold and hot load (77K/297K).
Beneficial effect: superconduction niobium nitride (NbN) thermoelectron (HEB) receiving detection device of a kind of high sensitivity that provides of the present invention, terahertz wave band, it is low that this device has required local oscillation power, advantages such as midband is wide have realized the feeble signal of 0.4 THz wave (THz) to 5 THz wave band frequencies detected.
Description of drawings
Fig. 1 is the HEB component graphics that 100 times of optics amplify.
Fig. 2 is a superconduction NbN HEB device profile structural representation.
Fig. 3 is the R-T curve of the NbN HEB device of four-terminal method measurement.
Fig. 4 is the I-V curve of the superconduction NbN HEB device under the different temperatures.
Fig. 5 is the input structure principle chart of apparatus of the present invention.
Fig. 6 is the system noise temperature of superconduction NbN HEB receiver during to the 2.5THz input.
Embodiment
The present invention's design has also prepared a kind of high sensitivity superconduction niobium nitride (NbN) thermoelectron (HEB) receiving detection device that the Terahertz frequency band signals detects that is used for, and this device comprises: incident signal source, local oscillation signal source, beam splitter, hyper-hemispherical lens, bias supply, Dewar, low temperature and ambient temperature amplifier, wave filter, power meter and superconductivity niobium nitride thermion device; Detected signal is sent by incident signal source, behind beam splitter, be incident on the Si hyper-hemispherical lens with the window of local oscillation signal by refrigeration machine, converge on the niobium nitride thermion device through the Si hyper-hemispherical lens again, the direct current biasing that is provided by bias voltage source is provided on the niobium nitride thermion device by T type offset adapter, the detected intermediate-freuqncy signal of niobium nitride thermion device is amplified, behind the filter filtering, is read by power meter via low temperature and ambient temperature amplifier.
The superconductivity niobium nitride thermion device is realized by following technology: the growing technology of the ultra-thin niobium nitride superconducting thin film of (1) 3-5nm thickness (this technology is applied for a patent: application number is 200710132283.5); (2) micro-processing technology of superconductivity niobium nitride thermion device preparation.Superconduction NbN HEB device is made of superconducting microbridge and flat helical antenna, and the thickness of NbN film is the 3-5 nanometer, and the microbridge district is of a size of 0.4 * 4 μ m
2, flat plane antenna adopts the logarithm helical structure, and material adopts the gold thin film of 250nm, and the antenna frequencies scope of design is that 0.4THz is to 5THz.Adopt the method for magnetron sputtering to prepare ultra-thin NbN superconducting thin film, utilize direct electronic beam writing technology, ultraviolet photolithographic technology, reactive ion etching technology and lift-off technology to finish the preparation in device antenna and microbridge district.
Antenna Design and impedance matching:
In the design of NbN HEB, antenna adopts the equiangular spiral design of a circle half.The external diameter R of antenna and internal diameter r
0There is following relation,
Spiral value a elects as at 0.221 o'clock, R=8.03r
0, the scope of frequency is by the internal diameter and the external diameter decision of antenna, and frequency range is about 0.4THz to 5THz.
Fig. 1 and Fig. 2 have shown the photo of the NbN HEB device that the present invention prepares and the cross-sectional view of device.NbN HEB is made of superconducting microbridge and gold thin film antenna, and the thickness of NbN film is 5 nanometers.Electrode between helical antenna and the NbN microbridge is made up of two layers of material, and bottom is the NbN of 6 nanometers, and top layer is the gold of 50 nanometers.The NbN film of 6 nanometers plays the effect that reduces contact resistance, can reduce again simultaneously to improve the superconductivity of superconducting layer because the gold layer contacts the approach effect that causes with superconducting layer.The superconducting microbridge district is of a size of 0.4 * 4 μ m
2, use electron beam exposure (EBL) technology and reactive ion etching (RIE) technology to realize.Antenna adopts plane equiangular spiral structure, and the gold thin film layer thick by 250nm constitutes, and realizes the preparation of antenna with photoetching technique and lift-off technology.
The DC characteristic of device is measured:
The NbN HEB device of preparation, the microbridge district is of a size of 0.4 * 4 μ m
2, the temperature and resistance of device (R-T) curve as shown in Figure 3.3 steps are arranged on the curve, the reflection of first step be the Tc of the thick NbN film intrinsic of 5nm, second step is that the gold electrode layer contacts with the superconducting thin film layer and causes approach effect, causes the Tc degeneration of NbN film, resistance value is about 13 Ω.The step that temperature occurs in the 4.75K place is that the residual resisitance of device is about 3 Ω, and mainly from the contact resistance of golden antenna and golden membranous layer and NbN layer, the resistance of NbN microbridge is about 78 Ω.
Setovering in the working voltage source, has measured voltage-to-current (I-V) characteristic of NbN HEB device, and Fig. 4 is the I-V curve of HEB under different temperatures.On the I-V of 4.5K temperature curve, to the 4.15mV interval, HEB is in metastable thermoelectron state at bias voltage 2.95mV, and rising with temperature and expand in this zone, descends with temperature and shrink, and this zone is the device optimum working zone.
Receiver noise temperature is measured:
Utilize the Y factor method, measured the noise temperature characteristic of the NbN HEB receiving trap of preparation with cold and hot load (77K/300K).Fig. 5 is a receiver signal detection architecture schematic diagram.Detected signal is sent by black matrix (hot and cold load), behind beam splitter, is incident on the Si hyper-hemispherical lens with the window of local oscillation signal by Dewar, converges on the NbN HEB device through the Si hyper-hemispherical lens again.Direct current (DC) biasing that is provided by bias voltage source is provided on the NbN HEB device by T type offset adapter, detected intermediate-freuqncy signal via low temperature and ambient temperature amplifier amplification filtering after, read by power meter.
The local oscillation signal source adopts the far infrared carbon dioxide laser to produce the high-frequency signal of 1.6THz and 2.5THz.Under the environment of 4.5K, the high-frequency signal to 1.6THz and 2.5THz has carried out mixing research respectively.Do not counting under the loss situation of incidence window to signal, to the signal mixing of 1.6THz, the lowest noise temperature that records NbN HEB receiver system is 980K.Be approximately 10 times of quantum noise limits.Signal mixing to 2.5THz, the lowest noise temperature of NbN HEB receiver system is 1530K, when Fig. 6 provides the 2.5THz mixing, the variation of the noise temperature of the NbN HEB receiver under different bias voltages, the I-V curve of NbN HEB frequency mixer when a and b are no microwave irradiation and loading 2.5THz signal amplitude photograph respectively among the figure.
Claims (5)
1, a kind of superconductivity niobium nitride thermion receiving detection device that detects terahertz signal is characterized in that this device comprises: incident signal source, local oscillation signal source, beam splitter, hyper-hemispherical lens, bias supply, Dewar, low temperature and ambient temperature amplifier, wave filter, power meter and superconductivity niobium nitride thermion device; Detected signal is sent by incident signal source, behind beam splitter, be incident on the Si hyper-hemispherical lens with the window of local oscillation signal by Dewar, converge on the niobium nitride thermion device through the Si hyper-hemispherical lens again, the direct current biasing that is provided by bias voltage source is provided on the niobium nitride thermion device by T type offset adapter, the detected intermediate-freuqncy signal of niobium nitride thermion device is amplified, behind the filter filtering, is read by power meter via low temperature and ambient temperature amplifier.
2, a kind of superconductivity niobium nitride thermion receiving detection device that detects terahertz signal according to claim 1 is characterized in that described incident signal source is that cold load is that 77K or heat load are the black matrix of 297K.
3, a kind of superconductivity niobium nitride thermion receiving detection device that detects terahertz signal according to claim 1 is characterized in that described superconductivity niobium nitride thermion device is to utilize the growing technology of ultra-thin niobium nitride superconducting thin film and micro-processing technology to make.
4, according to claim 1 or 3 described a kind of superconductivity niobium nitride thermion receiving detection devices that detect terahertz signal, it is characterized in that described niobium nitride thermion device is made of the flat plane antenna of superconduction niobium nitride microbridge and gold thin film, the thickness of niobium nitride microbridge is the 3-5 nanometer, and superconduction niobium nitride microbridge district is of a size of 0.4 * 4 μ m
2, flat plane antenna adopts the logarithm helical structure, and material adopts the gold thin film of 250nm, and the antenna frequencies scope is that 0.4THz is to 5THz.
5, a kind of superconductivity niobium nitride thermion receiving detection device that detects terahertz signal according to claim 3, it is characterized in that described micro-processing technology adopts the method for magnetron sputtering to prepare ultra-thin NbN superconducting thin film, use electron beam lithography and reactive ion etching technology to realize superconducting microbridge district size, realize the preparation of antenna with photoetching technique and lift-off technology.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103090977A (en) * | 2012-11-30 | 2013-05-08 | 南京大学 | Terahertz signal detection device |
| CN105486713A (en) * | 2015-12-02 | 2016-04-13 | 中国科学院紫金山天文台 | Terahertz superconducting phase transition edge detector and terahertz wave detection method |
| CN105510724A (en) * | 2015-11-30 | 2016-04-20 | 中国科学院紫金山天文台 | Magnetic field adjustment and control-based high-stability terahertz super-heat conduction electronic coherent detector system |
| CN106595878A (en) * | 2016-12-09 | 2017-04-26 | 南京大学 | Detector based on signal bias and superconductive niobium nitride bolometer |
| CN106784029A (en) * | 2017-01-19 | 2017-05-31 | 中国科学院上海技术物理研究所 | A kind of Terahertz alignment detection device |
| CN107036718A (en) * | 2017-06-21 | 2017-08-11 | 南京大学 | A kind of detector based on zero inclined microwave reflection and superconduction niobium nitride bolometer |
| CN110455410A (en) * | 2019-08-28 | 2019-11-15 | 南京大学 | A kind of array resonant mode Terahertz receiver and its terahertz light spectrometer device |
-
2008
- 2008-12-24 CN CNA2008102429016A patent/CN101452032A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103090977A (en) * | 2012-11-30 | 2013-05-08 | 南京大学 | Terahertz signal detection device |
| CN103090977B (en) * | 2012-11-30 | 2015-04-22 | 南京大学 | Terahertz signal detection device |
| CN105510724A (en) * | 2015-11-30 | 2016-04-20 | 中国科学院紫金山天文台 | Magnetic field adjustment and control-based high-stability terahertz super-heat conduction electronic coherent detector system |
| CN105486713A (en) * | 2015-12-02 | 2016-04-13 | 中国科学院紫金山天文台 | Terahertz superconducting phase transition edge detector and terahertz wave detection method |
| CN106595878A (en) * | 2016-12-09 | 2017-04-26 | 南京大学 | Detector based on signal bias and superconductive niobium nitride bolometer |
| CN106784029A (en) * | 2017-01-19 | 2017-05-31 | 中国科学院上海技术物理研究所 | A kind of Terahertz alignment detection device |
| CN106784029B (en) * | 2017-01-19 | 2018-06-26 | 中国科学院上海技术物理研究所 | A kind of Terahertz alignment detection device |
| CN107036718A (en) * | 2017-06-21 | 2017-08-11 | 南京大学 | A kind of detector based on zero inclined microwave reflection and superconduction niobium nitride bolometer |
| CN110455410A (en) * | 2019-08-28 | 2019-11-15 | 南京大学 | A kind of array resonant mode Terahertz receiver and its terahertz light spectrometer device |
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