CN201830211U - Lock-in amplifying circuit adopting CD552-R3 chip - Google Patents
Lock-in amplifying circuit adopting CD552-R3 chip Download PDFInfo
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- CN201830211U CN201830211U CN201020571659XU CN201020571659U CN201830211U CN 201830211 U CN201830211 U CN 201830211U CN 201020571659X U CN201020571659X U CN 201020571659XU CN 201020571659 U CN201020571659 U CN 201020571659U CN 201830211 U CN201830211 U CN 201830211U
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Abstract
The utility model belongs to the technical field of weak signal detection, in particular relates to a lock-in amplifying circuit adopting a CD552-R3 chip. The lock-in amplifying circuit comprises a pre-amplification module, a phase shift module and a phase-sensitive detection module; a to-be-detected signal is connected to an input terminal of the phase-sensitive detection module after processed by the pre-amplification module; after phase shift operation is performed to a reference signal by the phase shift module, the reference signal is connected to another input terminal of the phase-sensitive detection module; the signals are output from the output terminal of the phase-sensitive detection module; the pre-amplification module comprises a bandwidth-limited circuit and a second order amplifying circuit which are sequentially connected; the phase shift module is composed of a CD-951V4 chip and the peripheral circuit thereof; and the phase-sensitive detection module is composed of a CD552-R3 chip and the peripheral circuit thereof. By adopting the utility model, microvolt tiny voltage signals with millivolt noise can be detected, the signal-to-noise ratio of output signals reaches 50 to 1 above, and the utility model is applicable to Terahertz time-domain spectrometer signal acquisition and other occasions of small signals with strong background noise.
Description
Technical field
The utility model relates to the Detection of Weak Signals technical field, the phase-locked amplifying circuit of particularly a kind of employing.
Background technology
In modern scientific research, along with developing in depth and breadth of science and technology, the Detection of weak technology becomes more and more important, become comprehensive advanced subject in the current measuring technique, utilization Detection of Weak Signals technology can be measured as ultra-weak electronic signal, light signal, magnetic signal etc. and utilize the immeasurable small physical quantity of conventional method.Therefore, the Detection of Weak Signals technology has been subjected to the attention of modern science deeply, and development rapidly.
The noise of general measure system is a kind of interference signal, mainly is made up of white noise and low-frequency noise, and these noises can't be eliminated with methods such as shieldings usually.Noise interferences influences the operate as normal of measuring instrument, the detectivity of lowering apparatus.Therefore, in order to reduce The noise, narrow band filter commonly used comes filtering with out-of-band noise, improves the signal to noise ratio of instrument.Because the generally centre frequency of filter and unstable, and bandwidth can not arbitrarily be set, and can't be applicable to the demanding occasion of filtering noise.
Phase-locked amplification is the common technology that extracts signal from background noise, and the instrument that adopts this technology to make is called lock-in amplifier.Lock-in amplifier (lock-in amplifier, LIA), claim lock-in amplifier again, have when being used for extracting the Detection of Weak Signals of very noisy antijamming capability strong, can obtain the advantage of the variation of measured size and Orientation, improve certainty of measurement very effectively, and be widely used in input and control automatically.The basic structure of common phase-locked amplifying circuit mainly is made of signalling channel, reference channel, phase detectors (PSD) and low pass filter (LPF) four parts.
The utility model content
The purpose of this utility model is to provide a integrated level height, and the performance height is applicable to the phase-locked amplifying circuit of high-performance of gathering the tiny signal in the strong background noise occasion.Technical scheme is as follows:
A kind of phase-locked amplifying circuit that adopts the CD552-R3 chip, comprise the photodetector that is used to survey the terahertz pulse signal, pre-amplifying module, phase shift block and phase sensitive detection module, an input of the phase sensitive detection module that the measured signal of photodetector collection is received after handling through pre-amplifying module, receive another input of phase sensitive detection module after the phase shift operation of reference signal through the process phase shift block of phase shift block, output output signal by the phase sensitive detection module, wherein
Described pre-amplifying module comprises bandwidth-limited circuit and the second order amplifying circuit that links to each other successively;
Described phase shift block is made up of CD-951V4 chip and peripheral circuit thereof;
Described phase sensitive detection module is made up of CD552-R3 chip and peripheral circuit thereof.
As preferred implementation, 14 pins of described CD-951V4 chip connect reference signal, 18 pins are output, receive an input of phase sensitive detection module, 4 pins were connected electric capacity and were met power end+15V, and 5 pins connect-15V by electric capacity, 7 pins connect+5V, 8 pins connect-5V, 3,6,9,10,11,19 pin ground connection, 16,17 pin short circuits; Phase deviation device RV is connected between 7,8 pins, and its control termination 1 pin carries out the phase shift operation by regulating phase deviation device RV.
1 pin of described CD552-R3 chip connects the output of pre-amplifying module, 18 pins connect the output of phase shift block, 20 pins are the output of output detection signal, 4 pins were connected electric capacity and were connect+15V, and 5 pins connect-15V by electric capacity, 6,11,15,19 pin ground connection, 12,13 pins connect gain deflection machine RA two ends, 12 pins are regulated internal gain also as control end by changing the gain deflection machine simultaneously, and 10 pins pass through capacity earth.9 pins join back with variable resistor RH and 10 pins pass through capacity earth, and the control end of variable resistor RH and 10 pins join, and determine the cut-off frequency of built-in chip type low-pass filter unit by changing variable resistor RH resistance.
Described bandwidth-limited circuit is made up of DT212-DC2 chip and peripheral circuit thereof.
Described DT212-DC2 chip 1 pin connects measured signal by variable resistor RG, 13 pins are output, be connected to the input of described second order amplifying circuit, 1, link to each other by resistance between 13 pins, 1,4 pins connect variable resistor RQ two ends respectively, the 1 pin while is as the control end of variable resistor RQ and RG, change the gain and the quality factor of circuit by adjusting variable resistor RQ and RG, 38 pins connect+5V, 40 pins connect+15V, 34 pin ground connection, 39 pins are by capacity earth, 6, have resistance to link to each other between 7 pins, 21～32 pins are that control port connects switching signal respectively, the pin level can be switched to 0V or+5V, the logic level that changes control port is selected band connection frequency.
Described second order amplifying circuit is made of two groups of PGA103 chips and OP602 chip and peripheral chip thereof, and its each grade amplifies each and is in series by a PAG103 chip and an OP602 chip.
Advantage of the present utility model is: utilize highly integrated chip CD552-R3 to build phase-locked amplifying circuit; The used electronic device quantity of whole phase-locked amplifying circuit is few, and structure is formed simple compact, and the integrated circuit volume is little; Handle the commodity lock-in amplifier level that reaches on the performance of faint high-frequency signal on the market; Cost is far below the phase-locked amplification instrument of commodity.
Description of drawings
Fig. 1 is an electrical block diagram of the present utility model.
Fig. 2 is bandwidth-limited circuit figure.
Fig. 3 is the second order amplification circuit diagram.
Fig. 4 is the phase shift block circuit diagram.
Fig. 5 is the phase sensitive detection module circuit diagram.
Fig. 6 is the test design sketch.
Embodiment
Referring to Fig. 1, an embodiment of the present utility model is the circuit that is used to detect the output signal of terahertz time-domain spectroscopy instrument.This circuit is formed (Fig. 1) by 3 parts, comprises pre-amplifying module (1), phase shift block (2), phase sensitive detection module (3).Measured signal is connected in phase sensitive detection module (3) through pre-amplifying module (1), and reference signal is connected in phase sensitive detection module (3) through phase shift block (2), obtains signal from the output of phase sensitive detection module.
Because the output signal of terahertz time-domain spectroscopy instrument is to be obtained by photodetector, the influence of surround lighting is very big, and primary signal also has the environmental background noise of a large amount of millivolt levels except the useful signal of microvolt level, and useful signal is very little.Thus, must at first pass through certain amplification, reach the input threshold level of follow-up phase sensitive detection module.But if directly all input signals are directly amplified together, the ambient noise signal that has been exaggerated will exceed the input limits of phase sensitive detection chip, and gently then distortion is heavy then burn chip and can not work.Therefore, must carry out bandpass filtering earlier, amplify again behind the signal in a large amount of non-modulation frequency bands of filtering.
Pre-amplifying module (1) is formed (Fig. 3) by bandwidth-limited circuit (Fig. 2) and second order amplifying circuit.Wherein bandwidth-limited circuit is made up of DT212-DC2 chip and peripheral circuit thereof, this is a programmable control chip, 1 pin is a signal input, connect the signal that comes out from photoelectric sensor, 13 pins are signal outputs, connect the input of back second order amplifying circuit, 21～32 pins are logic control pins, can select the centre frequency of bandwidth-limited circuit by the high-low level that changes them, scope 100Hz～159.9KHz, because modulating frequency is 1100Hz in the example, so only use 21～25 pins, in circuit, add simultaneously gain and the quality factor that RG and RQ are used to regulate filter circuit, near the signal of signal centre frequency that comes out from bandwidth-limited circuit is exaggerated, the signal of other frequency ranges will greatly be decayed, and has tentatively improved signal to noise ratio.Signal from bandwidth-limited circuit does not still reach the input level of phase sensitive detection module, is continued to amplify by the second order amplifying circuit.The second order amplifying circuit is amplified by two-stage to be formed, each level amplification is made up of a PAG103 and an OP602, PAG103 is programmable amplifying circuit 4 a pins input, 7 pins output, enlargement ratio is by the high-low level decision of A0 and A1 pin, can linear amplification 10 times or 100 times, but because there is offset voltage in PAG, being input as output in 0 o'clock is not 0, therefore adjusts circuit with OP602 as offset voltage, has adjusted to get final product before operation for the first time.After amplifying through two-stage like this, signal has been exaggerated 1000 times in example, has satisfied the input requirement of phase sensitive detection module.
The conclusion of formula (4) as can be seen, the phase difference θ of primary signal and reference signal has played crucial effect, θ need be adjusted near 0 during operation.Phase shift block (2) is made up of CD-951V4 chip and peripheral circuit thereof.As shown in Figure 4,14 pins inputs connects reference signal, and the output of 18 pins connects the phase sensitive detection module, and 1 pin is used for phase adjusted, scope ± 100 °.As long as in operation, regulator potentiometer RV gets final product final output maximum.
Phase sensitive detection module (3) is made up of CD552-R3 chip and peripheral circuit thereof, its inner integrated multiplier and low pass filter.As shown in Figure 5,1 pin connects the output of pre-amplifying module, and 18 pins connect the output of phase shift block, and 20 pins are final signal output, resistance R H between the pin 9,10 is used to regulate the cut-off frequency of low pass filter, and the resistance R A between the pin one 2,13 is used to regulate the internal gain of multiplier.
Characteristics of the present utility model have
Measured signal is microvolt (μ V, 10
-6) level light current pressure signal, contained electrical noise signal is millivolt (mV, 10
-3) level, the electrical noise signal strength signal intensity is higher than useful signal 10
3Doubly.Behind phase-locked amplifying circuit of the present utility model, the output voltage signal signal to noise ratio reaches more than 50: 1, is mainly used in small-signal strong background noise occasions such as terahertz time-domain spectroscopy instrument signals collecting.
Below be an instantiation and test effect:
Circuit parameter is set as follows: bandwidth-limited circuit quality factor 10, gain 5, passband central frequency 1100Hz; 1000 times of second order amplifying circuit gains, phase sensitive detection inside modules gain 10, low-pass cut-off frequencies 1Hz.Input signal is provided by the THz time-domain spectroscopy instrument that University Of Tianjin develops voluntarily, and chopper frequencies is made as 1100Hz, and the optical delay linear velocity is 15um/s.The test effect as shown in Figure 6.
Claims (6)
1. phase-locked amplifying circuit that adopts the CD552-R3 chip, comprise pre-amplifying module, phase shift block and phase sensitive detection module, an input of the phase sensitive detection module that measured signal is received after handling through pre-amplifying module, receive another input of phase sensitive detection module after the phase shift operation of reference signal through the process phase shift block of phase shift block, output output signal by the phase sensitive detection module, it is characterized in that
Described pre-amplifying module comprises bandwidth-limited circuit and the second order amplifying circuit that links to each other successively;
Described phase shift block is made up of CD-951V4 chip and peripheral circuit thereof;
Described phase sensitive detection module is made up of CD552-R3 chip and peripheral circuit thereof.
2. phase-locked amplifying circuit according to claim 1, it is characterized in that, 14 pins of described CD-951V4 chip connect reference signal, and 18 pins are output, receive an input of phase sensitive detection module, 4 pins were connected electric capacity and were met power end+15V, 5 pins connect-15V by electric capacity, and 7 pins connect+5V, and 8 pins connect-5V, 3,6,9,10,11,19 pin ground connection, 16,17 pin short circuits; Phase deviation device RV is connected between 7,8 pins, and its control termination 1 pin carries out the phase shift operation by regulating phase deviation device RV.
3. phase-locked amplifying circuit according to claim 1, it is characterized in that, 1 pin of described CD552-R3 chip connects the output of pre-amplifying module, 18 pins connect the output of phase shift block, 20 pins are the output of output detection signal, 4 pins were connected electric capacity and were connect+15V, 5 pins connect-15V by electric capacity, 6,11,15,19 pin ground connection, 12,13 pins connect gain deflection machine RA two ends, 12 pins are regulated internal gain also as control end by changing the gain deflection machine simultaneously, and 10 pins pass through capacity earth.9 pins join back with variable resistor RH and 10 pins pass through capacity earth, and the control end of variable resistor RH and 10 pins join, and determine the cut-off frequency of built-in chip type low-pass filter unit by changing variable resistor RH resistance.
4. phase-locked amplifying circuit according to claim 1 is characterized in that described bandwidth-limited circuit is made up of DT212-DC2 chip and peripheral circuit thereof.
5. phase-locked amplifying circuit according to claim 4, it is characterized in that, described DT212-DC2 chip 1 pin connects measured signal by variable resistor RG, 13 pins are output, be connected to the input of described second order amplifying circuit, 1, link to each other by resistance between 13 pins, 1,4 pins connect variable resistor RQ two ends respectively, the 1 pin while is as the control end of variable resistor RQ and RG, change the gain and the quality factor of circuit by regulating variable resistor RQ and RG, 38 pins connect+5V, and 40 pins connect+15V, 34 pin ground connection, 39 pins are by capacity earth, 6, have resistance to link to each other between 7 pins, 21～32 pins are that control port connects switching signal respectively, the pin level can be switched to 0V or+5V, the logic level that changes control port is selected band connection frequency.
6. phase-locked amplifying circuit according to claim 1, it is characterized in that described second order amplifying circuit is made of two groups of PGA103 chips and OP602 chip and peripheral chip thereof, its each grade amplifies each and is in series by a PAG103 chip and an OP602 chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020571659XU CN201830211U (en) | 2010-10-22 | 2010-10-22 | Lock-in amplifying circuit adopting CD552-R3 chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201020571659XU CN201830211U (en) | 2010-10-22 | 2010-10-22 | Lock-in amplifying circuit adopting CD552-R3 chip |
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| CN201830211U true CN201830211U (en) | 2011-05-11 |
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| CN201020571659XU Expired - Fee Related CN201830211U (en) | 2010-10-22 | 2010-10-22 | Lock-in amplifying circuit adopting CD552-R3 chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102843102A (en) * | 2012-09-28 | 2012-12-26 | 江苏物联网研究发展中心 | Phase-locked amplifying circuit of monolithic integrated MEMS (Micro Electro Mechanical Systems) capacitive sensor |
| CN109115718A (en) * | 2018-08-03 | 2019-01-01 | 首都师范大学 | A kind of method and device filtering out the asynchronous scanning system coherent noise of Terahertz |
| CN109425366A (en) * | 2017-09-04 | 2019-03-05 | 南京理工大学 | A kind of analog signal processing circuit for active optics micro-displacement sensor |
| WO2019233033A1 (en) * | 2018-06-07 | 2019-12-12 | 深圳市华讯方舟太赫兹科技有限公司 | Terahertz time domain spectrum data acquisition system |
-
2010
- 2010-10-22 CN CN201020571659XU patent/CN201830211U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102843102A (en) * | 2012-09-28 | 2012-12-26 | 江苏物联网研究发展中心 | Phase-locked amplifying circuit of monolithic integrated MEMS (Micro Electro Mechanical Systems) capacitive sensor |
| CN102843102B (en) * | 2012-09-28 | 2015-04-22 | 江苏物联网研究发展中心 | Phase-locked amplifying circuit of monolithic integrated MEMS (Micro Electro Mechanical Systems) capacitive sensor |
| CN109425366A (en) * | 2017-09-04 | 2019-03-05 | 南京理工大学 | A kind of analog signal processing circuit for active optics micro-displacement sensor |
| WO2019233033A1 (en) * | 2018-06-07 | 2019-12-12 | 深圳市华讯方舟太赫兹科技有限公司 | Terahertz time domain spectrum data acquisition system |
| CN109115718A (en) * | 2018-08-03 | 2019-01-01 | 首都师范大学 | A kind of method and device filtering out the asynchronous scanning system coherent noise of Terahertz |
| CN109115718B (en) * | 2018-08-03 | 2020-10-13 | 首都师范大学 | Method and device for filtering coherent noise of terahertz asynchronous scanning system |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110511 Termination date: 20171022 |