CN108306624A - The quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse - Google Patents
The quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse Download PDFInfo
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- CN108306624A CN108306624A CN201711374991.XA CN201711374991A CN108306624A CN 108306624 A CN108306624 A CN 108306624A CN 201711374991 A CN201711374991 A CN 201711374991A CN 108306624 A CN108306624 A CN 108306624A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
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- H03K5/02—Shaping pulses by amplifying
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Abstract
A kind of quasi- Gauss shaping amplification circuit of the sigmatron core pulse of semiconductor tellurium-zinc-cadmium detector, including semiconductor tellurium-zinc-cadmium detector, 50 Ω match circuits, gain amplifying circuit, pole-zero cancellation circuit, baseline restorer circuit, filtering wave-shaping circuit, 50 Ω linear drive circuits and electric source filter circuit is claimed in the present invention；The invention has the advantages that：In the design of entire formation system, by the way that pole-zero cancellation circuit is added, reduces influence of the undershoot to signal, the signal of offset is retracted into original position, keeps the integrality of signal.Parameter transformation is carried out by frequency factor and amplitude factor, the amplitude of signal is enable to amplify, improves circuit carrying load ability, the waveform of output keeps the signal-to-noise ratio of system best closer to Gaussian waveform.
Description
Technical field
The invention belongs to towards sigmatron field semiconductor tellurium-zinc-cadmium detector field more particularly to semiconductor tellurium zinc
The quasi- Gauss shaping amplification circuit of cadmium detector core pulse.
Background technology
Sigmatron diagnostic system is always an important diagnostic means of tokamak magnetic confinement nuclear fusion device.
Lower hybrid wave drives (LowerHybrid Current Drive, LHCD) or electron cyclotron to heat (Electron
Cyclotron Resonance Heating, ECRH) under pattern, the fast electronics in plasma and ion and other electronics phases
Interaction generates bremsstrahlung, recombination radiation measures the power spectrum of the sigmatron to generate 20-200keV sigmatrons
With intensity distribution situation, the important informations such as the spatial distribution of fast electronics, Energy distribution can be obtained and changed with time,
And then can derive the physical characteristics such as radio-frequency power deposition and fast electronic current, drive effect disquisition for tokamak device
Important channel is provided.
In general, the electrode output signal of semiconductor nuclear radiation detector crystalline material is needed by preposition amplification and shaping
Amplify two processes.In traditional nuclear radiation detection electronic circuit, if carried out using pel array electrode CdZnTe crystal
Power spectrum detects, and more detection channels numbers mean that more signal differentiation circuits and multi-channel analysis circuit, entire detection system
The pulse signal processing circuit of system can be very complicated and huge, so generally use has more inexpensive, more high RST at present
The small-volume high-speed digital processing system of processing speed.Digitized signal handles analytical technology by by shaped pulse signal number
Word sampling keeps and post-processes so that the circuit of high-energy radiation diagnostic system is more compact, integrated level higher.This number letter
Number processing system biggest advantage is that have higher flexibility in temporal resolution and energy resolution ability.This meaning
If it is relatively low signal level, gate time can accordingly increase, while energy road can also be broadened to ensure better power spectrum system
Count result.If signal level is higher, system will use finer energy road section to obtain higher energy resolution.
Invention content
Present invention seek to address that the above problem of the prior art.The letter for proposing a kind of suppression system noise, filtering out high frequency
Number noise, makes forming waveform as close as unlimited pointed peaky pulse, system is made to obtain the semiconductor tellurium zinc of best signal-to-noise ratio
The quasi- Gauss shaping amplification circuit of cadmium detector core pulse.Technical scheme is as follows：
A kind of quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse, including the detection of semiconductor cadmium-zinc-teiluride
Device, further include 50 Ω match circuits, gain amplifying circuit, pole-zero cancellation circuit, baseline restorer circuit, filtering wave-shaping circuit,
50 Ω linear drive circuits and electric source filter circuit.
Wherein, the tellurium-zinc-cadmium detector exports core pulse electrical signal to 50 Ω match circuits, the 50 Ω matchings
Circuit, for carrying out impedance matching to core pulse electrical signal to reduce loss of signal, the pole-zero cancellation circuit is used for
Output waveform is set to be shortened dramatically as the unipolar pulse of no undershoot, and tail portion die-away time, to improve overload-resistant energy
Power reduces the overload out-of-service time, the baseline restorer circuit, for improving circuit in needle position misalignment caused by reactance parameter,
The filtering wave-shaping circuit, for the signal after baseline restorer to be handled signal using the quasi- gaussian filtering of minimum grade,
Parameter transformation solution is carried out by time factor and amplitude factor in transmittance process, obtains the unit impulse of Gauss formation system
Response, carries out Fourier transformation and is transformed into frequency domain response, and shaping amplification circuit optimum capacitance value is obtained according to frequency response results
And resistance value, the quasi- Gaussian pulse signal with minimum pulsewidth is obtained by sallen-key filter circuit shapings, is then surveyed
Measure the power spectrum and intensity distribution situation of the sigmatron；The 50 Ω linear drive circuits, for believing core pulse electronics
Number carry out impedance matching to reduce loss of signal, the electric source filter circuit, for being filtered reduction interference to power supply signal
Influence to circuit.
Further, the 50 Ω match circuits include resistance R1-R4, capacitance C1 and amplifier U1A, the cadmium-zinc-teiluride
Detector is connected with resistance R1, capacitance C1 respectively, capacitance C1 input anode phases with resistance R2, amplifier U1A respectively
Connection, the input cathode of the amplifier U1A are connected with resistance R4, and the cathode of the amplifier U1A also passes through resistance R3
It is connected with the output end of amplifier U1A, the resistance R1-R4, tellurium-zinc-cadmium detector P1 are grounded.
Further, the gain amplifying circuit includes U1B amplifying circuits, and pole-zero cancellation circuit includes resistance R5-R8,
Capacitance C2 and amplifier U1B.The pole-zero cancellation circuit is connected with pre-amplifier U1A, the capacitance C2 respectively with resistance
R5, resistance R6 and amplifier U1B normal phase input ends are connected.The resistance R7 respectively with amplifier U1B reverse side, output
End, resistance R8, capacitance C3 connections.The electric discharge resistance R6, resistance R8 are grounded.
Further, the baseline restorer circuit includes capacitance C26, resistance R29-R31 and diode D1.The capacitance
C26 is connected with resistance R29 and resistance R31, and diode D1 is connected with resistance R31 with resistance R30.Resistance R29 and diode
D1 and tellurium-zinc-cadmium detector P1 are grounded.
Further, the filtering forming circuit U 2A amplifiers and U2B amplifiers and U3A amplifiers, capacitance C3-C13,
Resistance R9-R19, capacitance C32-C33.C3 is connected with resistance R9-10 in the quasi- Gauss shaping amplification circuit U2A of core pulse.
Resistance R11 is connected with capacitance C4 resistance R12 respectively.Amplifier U2A positive terminals are connected with resistance R12, U2A reverse side with
Resistance R13 and R14 are connected, and U2A amplifier outs are connected to reverse side with R13.Capacitance C7 and capacitance C8 and resistance R12.
It is connected.Capacitance C5 and C6 parallel connection is connected respectively to U2A output ends and resistance R12 and R11.Resistance R15 is connected with capacitance C9
It connects and is connected to resistance R16 and be ultimately connected to amplifier U2B.Resistance R9, capacitance C4, capacitance C7-C9, capacitance C32-C33 connect
Ground.Then resistance R17 and resistance R16 in the amplifier U2B, capacitance C10 are connected with C11 through capacitance connection to amplification
The output end of device U2B.Resistance R17 and amplifier U2B positive terminals, capacitance C12 capacitances C13 are connected, resistance R20 and capacitance C14
It is connected with amplifier U2B output ends.Resistance R18 and resistance R19, amplifier U2B reverse side are connected with output end, capacitance
C12-C14, resistance R19 are connected to ground.Resistance R21 is connected with resistance R22 capacitances C15 in the amplifier U3A, capacitance C16
Connect respectively with resistance R22 and amplifier U3A positive terminals, resistance R23 respectively with the reverse side of resistance R24 and amplifier U3A and
Output end is connected.Capacitance C15 is connected with resistance R21 with R22 and amplifier U3A output ends respectively.Capacitance C35 connections U3A
Positive supply, the negative supply of capacitance C34 connections U3A.Capacitance C33-C34, capacitance C16, resistance R24 are all connected to ground.
Further, the 50 Ω linear drive circuits and electric source filter circuit include inductance L1-L4, capacitance C24-
C25, inductance L2 is connected with amplifier U3A and amplifier U2A positive supplies in the electric source filter circuit, inductance L1 and amplification
Device U1A is connected with amplifier U2A positive supplies.Inductance L3 is connected with amplifier U3A and amplifier U2A negative supplies, inductance L4
It is connected with amplifier U1A and amplifier U2A negative supplies, capacitance C24 is connected with amplifier U3A positive supplies and inductance L2, electricity
Hold C25 with amplifier U3A negative supplies and inductance L3 to be connected, capacitance C24-C24 is grounded.
Further, after the quasi- gaussian filtering wave-shaping circuit carries out parameter transformation by time factor and amplitude factor
It is a second differential equation, and is solved in the time domain, obtain the unit impulse response of Gauss formation system, carries out Fu
In leaf transformation be transformed into frequency domain response, according to the power spectrum and intensity distribution situation of the frequency response measurement sigmatron.
It advantages of the present invention and has the beneficial effect that：
A. detector currents pulse of the present invention is not fluid shock signal, and there is one fixed widthes and definite shape, and
Pulse shaper responds signal and is influenced by pulse signal peak value and halfwidth (FWHM) in electronic system, defeated
Going out signal amplitude can change therewith, and the peak value of current pulse signal and halfwidth (FWHM) are past in certain detectors
It is past also to change at random, thus can also cause broadening of spectral lines.Zero phase of pole in this quasi- gaussian filtering shaping amplification method design
The circuit design that disappears makes sigmatron core pulse width narrow as far as possible, can reduce signal pile-up and to a certain degree to the greatest extent in this way
On avoid baseline fluctuation.It can reduce track loss while keep the top of signal relatively flat simultaneously.This circuit can also be prevented
Stop signal is excessive to cause follow up amplifier saturation to make distorted signals, while it is unipolar signal to make signal all, eliminates signal as possible
The back attack phenomenon of tail portion.
B. quasi- Gauss shaping amplification circuit has subsequent pulse amplitude analysis and its important role, to energy disperse spectroscopy
Energy resolution, Energy linearity and peak position have very important influence, therefore to the requirement of shaping circuit
With regard to quite high.And this circuit design suppression system noise, filter out the signal noise of high frequency, make forming waveform as close as
Unlimited pointed peaky pulse makes system obtain best signal-to-noise ratio.
C. the design of this quasi- Gauss shaping filter amplification method shortens the shaping pulse period, reduces detector signal
The fluctuation of accumulation and baseline, improves the count rate response of circuit, while making sigmatron core pulse shaping output waveform peak position
After move, pulse width becomes larger, and two side waveforms more level off to symmetrically, and waveform is also similar to Gauss；Wave-shape amplitude is with follow-up
The general amplitude range of energy spectrum analysis circuit more matches.
D. the output pulse of this shaping filter amplification Enlargement Design is more suitable for Low threshold detection circuit, peak detection circuit
Requirement with peak holding circuit to signal.
Description of the drawings
Fig. 1 is that the present invention provides the quasi- Gauss shaping amplification circuit of preferred embodiment semiconductor tellurium-zinc-cadmium detector core pulse
Figure；
Fig. 2 is the signal transduction process of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, detailed
Carefully describe.Described embodiment is only a part of the embodiment of the present invention.
The present invention solve above-mentioned technical problem technical solution be：
A kind of quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse, including the detection of semiconductor cadmium-zinc-teiluride
Device, further include 50 Ω match circuits, gain amplifying circuit, pole-zero cancellation circuit, baseline restorer circuit, filtering wave-shaping circuit,
50 Ω linear drive circuits and electric source filter circuit；
Wherein, the tellurium-zinc-cadmium detector exports core pulse electrical signal to 50 Ω match circuits, the 50 Ω matchings
Circuit, for carrying out impedance matching to core pulse electrical signal to reduce loss of signal, the pole-zero cancellation circuit is used for
Output waveform is set to be shortened dramatically as the unipolar pulse of no undershoot, and tail portion die-away time, to improve overload-resistant energy
Power reduces overload out-of-service time, the baseline restorer circuit, for improving circuit in needle position misalignment caused by reactance parameter, institute
Filtering wave-shaping circuit is stated, for handling signal the signal after baseline restorer using the quasi- gaussian filtering of minimum grade, is passed
Parameter transformation solution is carried out by time factor and amplitude factor during passing, the unit impulse for obtaining Gauss formation system is rung
Answer, carry out Fourier transformation be transformed into frequency domain response, according to frequency response results obtain shaping amplification circuit optimum capacitance value and
Resistance value obtains the quasi- Gaussian pulse signal with minimum pulsewidth by sallen-key filter circuit shapings, then measures
The power spectrum and intensity distribution situation of the sigmatron；The 50 Ω linear drive circuits, for core pulse electrical signal
Impedance matching is carried out to reduce loss of signal, the electric source filter circuit, for being filtered reduction interference pair to power supply signal
The influence of circuit.
Preferably, the 50 Ω match circuits include that resistance R1-R4, capacitance C1 and amplifier U1A, the cadmium-zinc-teiluride are visited
It surveys device to be respectively connected with resistance R1, capacitance C1, the capacitance C1 is connected with the input anode of resistance R2, amplifier U1A respectively
Connect, the input cathode of the amplifier U1A is connected with resistance R4, the cathode of the amplifier U1A also by resistance R3 with put
The output end of big device U1A is connected, and the resistance R1-R4, tellurium-zinc-cadmium detector P1 are grounded.
Preferably, the gain amplifying circuit includes U1B amplifying circuits, and pole-zero cancellation circuit includes resistance R5-R8, electricity
Hold C2 and amplifier U1B.The pole-zero cancellation circuit is connected with pre-amplifier U1A, the capacitance C2 respectively with resistance
R5, resistance R6 and amplifier U1B normal phase input ends are connected.The resistance R7 respectively with amplifier U1B reverse side, output
End, resistance R8, capacitance C3 connections.The electric discharge resistance R6, resistance R8 are grounded.
Preferably, the baseline restorer circuit includes capacitance C26, resistance R29-R31 and diode D1.The capacitance C26
It is connected with resistance R29 and resistance R31, diode D1 is connected with resistance R31 with resistance R30.Resistance R29 and diode D1
And tellurium-zinc-cadmium detector P1 is grounded.
Further, the filtering forming circuit U 2A amplifiers and U2B amplifiers and U3A amplifiers, capacitance C3-C13,
Resistance R9-R19, capacitance C32-C33.C3 is connected with resistance R9-10 in the quasi- Gauss shaping amplification circuit U2A of core pulse.
Resistance R11 is connected with capacitance C4 resistance R12 respectively.Amplifier U2A positive terminals are connected with resistance R12, U2A reverse side with
Resistance R13 and R14 are connected, and U2A amplifier outs are connected to reverse side with R13.Capacitance C7 and capacitance C8 and resistance R12.
It is connected.Capacitance C5 and C6 parallel connection is connected respectively to U2A output ends and resistance R12 and R11.Resistance R15 is connected with capacitance C9
It connects and is connected to resistance R16 and be ultimately connected to amplifier U2B.Resistance R9, capacitance C4, capacitance C7-C9, capacitance C32-C33 connect
Ground.Then resistance R17 and resistance R16 in the amplifier U2B, capacitance C10 are connected with C11 through capacitance connection to amplification
The output end of device U2B.Resistance R17 and amplifier U2B positive terminals, capacitance C12 capacitances C13 are connected, resistance R20 and capacitance C14
It is connected with amplifier U2B output ends.Resistance R18 and resistance R19, amplifier U2B reverse side are connected with output end, capacitance
C12-C14, resistance R19 are connected to ground.Resistance R21 is connected with resistance R22 capacitances C15 in the amplifier U3A, capacitance C16
Connect respectively with resistance R22 and amplifier U3A positive terminals, resistance R23 respectively with the reverse side of resistance R24 and amplifier U3A and
Output end is connected.Capacitance C15 is connected with resistance R21 with R22 and amplifier U3A output ends respectively.Capacitance C35 connections U3A
Positive supply, the negative supply of capacitance C34 connections U3A.Capacitance C33-C34, capacitance C16, resistance R24 are all connected to ground.
Preferably, the 50 Ω linear drive circuits and electric source filter circuit include inductance L1-L4, capacitance C24-
C25, inductance L2 is connected with amplifier U3A and amplifier U2A positive supplies in the electric source filter circuit, inductance L1 and amplification
Device U1A is connected with amplifier U2A positive supplies.Inductance L3 is connected with amplifier U3A and amplifier U2A negative supplies, inductance L4
It is connected with amplifier U1A and amplifier U2A negative supplies, capacitance C24 is connected with amplifier U3A positive supplies and inductance L2, electricity
Hold C25 with amplifier U3A negative supplies and inductance L3 to be connected, capacitance C24-C24 is grounded.
Preferably, it is after the quasi- gaussian filtering wave-shaping circuit carries out parameter transformation by time factor and amplitude factor
One second differential equation, and solved in the time domain, the unit impulse response of Gauss formation system is obtained, is carried out in Fu
Leaf transformation is transformed into frequency domain response, obtains shaping amplification circuit optimum capacitance value and resistance value according to frequency response results, passes through
Sallen-key filter circuit shapings obtain the quasi- Gaussian pulse signal with minimum pulsewidth, then measure the sigmatron
Power spectrum and intensity distribution situation.
With reference to shown in Fig. 2, present invention is particularly directed to cadmium-zinc-teiluride semiconductor radiation detectors by A., for high energy X x ray irradiation x
Under the conditions of, the characteristics of semiconductor detector easy tos produce polarity effect, first analogue simulation, determine pole-zero cancellation circuit and detection
Output signal matching relationship is put before device, is calculated and is determined crucial cascade resistance and matching relationship.
B. the signal exported from tellurium-zinc-cadmium detector is core pulse electrical signal, is first had to through 50 Ω match circuits
With gain amplifying circuit, the electric discharge direct output signal in road is very faint before tellurium-zinc-cadmium detector, in order to put this signal feeding
Big circuit is amplified, and also to avoid the decaying of long-line transmission, reduces noise and interference, thus has carried out small signal circuit cloth
Line noise analysis and input signal impedance matching analysis.
C. before putting circuit output signal and entering pole-zero cancellation circuit makes signal narrow as far as possible, reduces track loss
Make simultaneously relatively flat at the top of voltage pulse signal.
D. after baseline restorer circuit, can anti-stop signal it is excessive cause follow up amplifier saturation make distorted signals, together
When make signal all be unipolar signal, as possible eliminate wave tail back attack phenomenon
E. quasi- gaussian filtering forming secondly is carried out to signal, filtering wave-shaping circuit uses the quasi- gaussian filtering pair of minimum grade
Signal is handled, and parameter transformation is carried out by time factor and amplitude factor in transmittance process；To being one secondary after transformation
The differential equation is solved in the time domain, obtains the unit impulse response of Gauss formation system, is carried out Fourier transformation and is transformed into
Frequency domain response obtains shaping amplification circuit optimum capacitance value and resistance value according to frequency response results, is filtered by sallen-key
Wave circuit shaping obtains the quasi- Gaussian pulse signal with minimum pulsewidth, then measures the power spectrum and intensity point of the sigmatron
Cloth situation.
F. it finally keeps signal, circuit to work as a buffer in 50 Ω driving circuits, has to signal integrity very careless
Justice is finally filtered power supply, reduces the noise of power supply, increases the noise reduction characteristics of system.
The key point of the present invention and protection point are：
1. according to cadmium-zinc-teiluride semiconductor radiation detector signal characteristic, under sigmatron radiation parameter, semiconductor
Detector easy tos produce the characteristics of polarity effect, and analogue simulation first puts output before pole-zero cancellation circuit and detector is determined
Signal Matching relationship, calculating determine crucial cascade resistors match relationship.
2. the signal exported from tellurium-zinc-cadmium detector is core pulse electrical signal, first have to through 50 Ω match circuits
With gain amplifying circuit, the electric discharge direct output signal in road is very faint before tellurium-zinc-cadmium detector, in order to put this signal feeding
Big circuit is amplified, and also to avoid the decaying of long-line transmission, reduces noise and interference, thus has carried out small signal circuit cloth
Line noise analysis and input signal impedance matching analysis.
3. entering pole-zero cancellation according to tellurium-zinc-cadmium detector Design of Signal pole-zero cancellation circuit, detector output signal
So that pulse signal is narrowed as far as possible after circuit, reduce track loss while keeping the top of signal relatively flat.
It, can anti-stop signal be excessive causes subsequently to amplify after baseline restorer circuit 4. devise baseline restorer circuit
Device saturation makes distorted signals, while it is unipolar signal to make signal all, eliminates the back attack phenomenon of wave tail as possible.
5. secondly carrying out quasi- gaussian filtering forming to signal, filtering wave-shaping circuit uses the quasi- gaussian filtering pair of minimum grade
Signal is handled, and parameter transformation is carried out by time factor and amplitude factor in transmittance process；To being one secondary after transformation
The differential equation is solved in the time domain, obtains the unit impulse response of Gauss formation system, is carried out Fourier transformation and is transformed into
Frequency domain response obtains shaping amplification circuit optimum capacitance value and resistance value according to frequency response results, is filtered by sallen-key
Wave circuit shaping obtains the quasi- Gaussian pulse signal with minimum pulsewidth, then measures the power spectrum and intensity point of the sigmatron
Cloth situation.
6. the output pulse of quasi- Gauss shaping filter amplification method design is more suitable for Low threshold detection circuit, peak value inspection
The requirement of slowdown monitoring circuit and peak holding circuit to signal.
The above embodiment is interpreted as being merely to illustrate the present invention rather than limit the scope of the invention.
After having read the content of record of the present invention, technical staff can make various changes or modifications the present invention, these are equivalent
Variation and modification equally fall into the scope of the claims in the present invention.
Claims (7)
1. a kind of quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse, including semiconductor tellurium-zinc-cadmium detector,
It is characterized in that, further including 50 Ω match circuits, gain amplifying circuit, pole-zero cancellation circuit, baseline restorer circuit, filtering forming
Circuit, 50 Ω linear drive circuits and electric source filter circuit；
Wherein, the tellurium-zinc-cadmium detector export core pulse electrical signal give 50 Ω match circuits, the 50 Ω match circuits,
For carrying out impedance matching to core pulse electrical signal to reduce the damage of tellurium-zinc-cadmium detector pre-amplification circuit output signal
Consumption, the pole-zero cancellation circuit, for making output waveform as the unipolar pulse of no undershoot, the baseline restorer circuit is used
In improvement circuit needle position misalignment as caused by reactance parameter, the filtering wave-shaping circuit, for adopting the signal after baseline restorer
Signal is handled with the quasi- gaussian filtering of minimum grade, parameter change is carried out by time factor and amplitude factor in transmittance process
Solution is changed, the unit impulse response of Gauss formation system is obtained, Fourier transformation is carried out and is transformed into frequency domain response, rung according to frequency
Should result obtain shaping amplification circuit optimum capacitance value and resistance value, being obtained by sallen-key filter circuit shapings has pole
The quasi- Gaussian pulse signal of small pulsewidth then measures the power spectrum and intensity distribution situation for obtaining sigmatron；50 Ω is linear
Driving circuit, for carrying out impedance matching to core pulse electrical signal to reduce loss of signal；The electric source filter circuit is used
It is filtered in power supply signal.
2. the quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse according to claim 1, feature exist
In, 50 Ω match circuits include resistance R1-R4, capacitance C1 and amplifier U1A, the tellurium-zinc-cadmium detector respectively with resistance
R1, capacitance C1 are connected, and the capacitance C1 is connected with the input anode of resistance R2, amplifier U1A respectively, the amplifier
The input cathode of U1A is connected with resistance R4, and the cathode of the amplifier U1A also passes through the output of resistance R3 and amplifier U1A
End is connected, and the resistance R1-R4, tellurium-zinc-cadmium detector P1 are grounded.
3. the quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse according to claim 2, feature exist
In the gain amplifying circuit includes U1B amplifying circuits, and pole-zero cancellation circuit includes resistance R5-R8, capacitance C2 and amplifier
U1B.The pole-zero cancellation circuit is connected with pre-amplifier U1A, and the capacitance C2 with resistance R5, resistance R6, and is put respectively
Big device U1B normal phase input ends are connected, the resistance R7 respectively with amplifier U1B reverse side, output end, resistance R8, capacitance C3
Connection, the electric discharge resistance R6, resistance R8 are grounded.
4. the quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse according to claim 1, feature exist
In the baseline restorer circuit includes capacitance C26, resistance R29-R31 and diode D1, the capacitance C26 and resistance R29 and electricity
Resistance R31 is connected, and diode D1 is connected with resistance R31 with resistance R30, resistance R29 and diode D1 and tellurium-zinc-cadmium detector
P1 is grounded.
5. the quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse according to claim 1, feature exist
In, the filtering wave-shaping circuit include U2A amplifiers and U2B amplifiers and U3A amplifiers, capacitance C3-C13, resistance R9-R19,
C3 is connected with resistance R9-10 in capacitance C32-C33, the quasi- Gauss shaping amplification circuit U2A of core pulse, resistance R11 difference
It is connected with capacitance C4 resistance R12, amplifier U2A positive terminals are connected with resistance R12, U2A reverse side and resistance R13 and R14
It is connected, U2A amplifier outs are connected to reverse side with R13, and capacitance C7 and capacitance C8 are connected with resistance R12, capacitance C5
And C6 parallel connections are connected respectively to U2A output ends and resistance R12 and R11, resistance R15 is connected with capacitance C9 and is connected to resistance
R16 is ultimately connected to amplifier U2B, and resistance R9, capacitance C4, capacitance C7-C9, capacitance C32-C33 are grounded, the amplifier
Resistance R17 and resistance R16 in U2B, capacitance C10 are connected with C11 and then the output end by capacitance connection to amplifier U2B,
Resistance R17 and amplifier U2B positive terminals, capacitance C12 capacitances C13 are connected, and resistance R20 and capacitance C14 and amplifier U2B are exported
End is connected, and resistance R18 is connected with resistance R19, amplifier U2B reverse side and output end, capacitance C12-C14, and resistance R19 is equal
Be connected to ground, resistance R21 is connected with resistance R22 capacitances C15 in the amplifier U3A, capacitance C16 respectively with resistance R22 and put
Big device U3A positive terminals connection, resistance R23 are connected with the reverse side and output end of resistance R24 and amplifier U3A respectively, capacitance
C15 is connected with resistance R21 with R22 and amplifier U3A output ends respectively, the positive supply of capacitance C35 connections U3A, and capacitance C34 connects
The negative supply of U3A, capacitance C33-C34, capacitance C16 are connect, resistance R24 is all connected to ground.
6. the quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse according to claim 1, feature exist
In the 50 Ω linear drive circuits and electric source filter circuit include inductance L1-L4, capacitance C24-C25, the power filter
Inductance L2 is connected with amplifier U3A and amplifier U2A positive supplies in circuit, and inductance L1 and amplifier U1A and amplifier U2A is just
Power supply is connected, and inductance L3 is connected with amplifier U3A and amplifier U2A negative supplies, inductance L4 and amplifier U1A and amplifier
U2A negative supplies are connected, and capacitance C24 is connected with amplifier U3A positive supplies and inductance L2, capacitance C25 and amplifier U3A negative electricity
Source is connected with inductance L3, and capacitance C24-C24 is grounded.
7. the quasi- Gauss shaping amplification circuit of semiconductor tellurium-zinc-cadmium detector core pulse according to claim 5, feature exist
In the quasi- gaussian filtering wave-shaping circuit is by being a second differential side after time factor and amplitude factor progress parameter transformation
Journey, and solved in the time domain, the unit impulse response of Gauss formation system is obtained, Fourier transformation is carried out and is transformed into frequency domain
Response obtains shaping amplification circuit optimum capacitance value and resistance value according to frequency response results, passes through sallen-key filtered electricals
Road shaping obtains the quasi- Gaussian pulse signal with minimum pulsewidth, then measures the power spectrum and intensity distribution feelings of the sigmatron
Condition.
Priority Applications (1)
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