CN205900538U - Reliability test structure - Google Patents
Reliability test structure Download PDFInfo
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- CN205900538U CN205900538U CN201620831432.1U CN201620831432U CN205900538U CN 205900538 U CN205900538 U CN 205900538U CN 201620831432 U CN201620831432 U CN 201620831432U CN 205900538 U CN205900538 U CN 205900538U
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- 238000012360 testing method Methods 0.000 title claims abstract description 329
- 238000013508 migration Methods 0.000 claims abstract description 176
- 230000005012 migration Effects 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000000523 sample Substances 0.000 claims description 24
- 238000001514 detection method Methods 0.000 claims description 12
- 230000005856 abnormality Effects 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 abstract 3
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- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 101100208721 Mus musculus Usp5 gene Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 230000027756 respiratory electron transport chain Effects 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model provides a reliability test structure, move the pad subassembly of testing the structure and forming by a plurality of pads including electro -migration test structure, isothermal electro -migration test structure, stress, electro -migration test structure and five different solder connection, isothermal electro -migration test structure and four different solder connection, stress migration test structure and four different solder connection, electro -migration test structure and isothermal electro -migration test structure have a sharing pad, and electro -migration test structure and stress migration test structure have two sharing pads, and isothermal electro -migration test structure has two sharing pads with stress migration test structure. The utility model provides a lead to testing a limited number of problems of structure because test structure separate, cutting say that the area is limited and pad quantity is limited, increased the quantity of test structure, the utilization ratio that has improved the wafer has reduced test cost simultaneously.
Description
Technical field
This utility model is related to field of manufacturing semiconductor devices, more particularly to a kind of reliability testing structure.
Background technology
Electromigration (electro migration, em) is the important of quasiconductor aluminum bronze making technology back segment reliability assessment
One of project, is led to by the momentum transfer between conduction electrons and the metallic atom of diffusion.At a certain temperature, apply in a metal
Plus certain electric current, when electromigration occurs, the part momentum of a moving electron transfers to neighbouring active ions, and this just leads
This ion is caused to leave home position.When electric current density is larger, electronics orients under the driving of electrostatic field force from cathode to anode
Mobile formation " electron wind " (electron wind), and then the home position away from them for the atom of vast number can be caused.With
The passage of time, electromigration can lead to conductor, fracture or breach occur in especially narrow wire and then stops electronics
Flowing, this defect is referred to as empty (void) or internal failure, that is, open a way.Electromigration also results in the atom packing in conductor
And to proximity conductor drift and then form thrust (hillock), produce unexpected electrical connection, i.e. short circuit.With quasiconductor collection
The characteristic size becoming circuit devcie constantly reduces, and the size of metal interconnecting wires constantly reduces, thus leading to electric current density constantly to increase
Plus, the component failure being caused by electromigration is more notable.
Stress migration (stress migration, sm) is equally quasiconductor aluminum bronze making technology back segment reliability assessment
One of big event.Stress migration is at a certain temperature, due to the heat of multiple layer metal connecting line construction and the dielectric material of surrounding
, so that metal connecting line is stressed, in the presence of stress, the crystal grain space in metal is to stress concentration for coefficient of expansion difference
Place is collected, thus forming the physical phenomenon in cavity in a metal.The cavity that stress migration is formed will when reaching to a certain degree
Metal interconnecting wires in integrated circuit are opened a way, causes to lose efficacy.Stress migration is cause semiconductor device failure one
Individual major reason.
The principle of isothermal migration tests (isot) is by control loop, adjusts the electricity being added on test metal interconnecting wires
Stream, changes its Joule heat (i2R), make metal interconnecting wires temperature constant on target temperature.Test failure standard is the electricity of test specimen
Resistance relative variation (δ r/r) reaches a certain numerical value, and using this time as median time to failure.
In traditional test structure, electro-migration testing structure, stress migration test structure and isothermal electro-migration testing knot
Structure is detached, and because test structure can only be placed on the Cutting Road of wafer, the area that it takies is limited, can place
The quantity of test structure is severely limited.In addition, various test structures are required for being tested by pad, but pad
It is equally limited, the priority level of reliability testing is as shown in figure 1, be followed successively by from high to low: inter-level dielectric reliability testing,
Isothermal electro-migration testing (narrow), gate oxide integrity test, plasma damage test, electro-migration testing, device reliability
Test, stress migration test and isothermal electro-migration testing (wide), wherein electro-migration testing take 7 pads, and stress migration
Test at most needs 4 pads, but because stress migration test priority level ratio is relatively low, typically cannot be assigned to pad
's.But it is as new jesd214 to require, stress migration test has to execute, and simultaneously different reliability testings is also right
On wafer, the quality of structure is a kind of ensures.
Therefore, how in the case that Cutting Road region and number of pads are limited, as much as possible various reliabilities are realized
Test, while reducing testing cost, improves the utilization rate of wafer, and then the q＆r of guarantee semiconductor structure, carries
The yields of high semiconductor device has become one of those skilled in the art's problem demanding prompt solution.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of reliability testing knot
Structure, for solving to lead to test structure limited amount due to the separation of each test structure and Cutting Road limited area in prior art
And take larger wafer area so that crystal round utilization ratio is relatively low, increase the problem of testing cost.
For achieving the above object, this utility model provides a kind of reliability testing structure, and described reliability testing structure is extremely
Few inclusion: electro-migration testing structure, isothermal electro-migration testing structure, stress migration test structure and the weldering being made up of multiple pads
Disk assembly；The described electro-migration testing structure pad different from five connects, and described isothermal electro-migration testing structure and four are not
Same pad connects, and the described stress migration test structure pad different from four connects；Wherein, described electro-migration testing structure
There are a shared pad, described electro-migration testing structure and described stress migration test knot with described isothermal electro-migration testing structure
Structure has the shared pad of two shared pads, described electro-migration testing structure and described isothermal electro-migration testing structure and described electricity
The pad that migration test structure and described stress migration test structure share is different pads, described isothermal electro-migration testing knot
Structure and described stress migration test structure have two shared pads.
In an embodiment of the present utility model, described electro-migration testing structure and described isothermal electro-migration testing structure
It is located at the both sides of described pad assembly respectively.
In an embodiment of the present utility model, described pad assembly includes the first to the 8th weldering being sequentially arranged at intervals
Disk；Described electro-migration testing structure and described first pad, described second pad, described 5th pad, described 6th pad with
And described 7th pad connect；Described isothermal electro-migration testing structure and described 3rd pad, described 4th pad, the described 7th
Pad and described 8th pad connect；Described stress migration test structure and described 3rd pad, described 4th pad, described
5th pad and described 6th pad connect.
In an embodiment of the present utility model, the described first to the 8th pad is in rods arranged in horizontal line.
In an embodiment of the present utility model, described electro-migration testing structure includes the first test lead, and described
One end of one test lead is connected with described first pad and described second pad by connecting wire, described first test lead
The other end be connected with described 5th pad and described 6th pad by connecting wire；Described first test lead and described company
Connect wire and be located at different metal levels, and be connected by metal plug between described first test lead and described connecting wire
Connect.
In an embodiment of the present utility model, described first pad and described 6th pad input weldering as electric current
Disk, is suitable to by probe connecting test current source；Described second pad and described 5th pad, as voltage tester pad, are suitable to
By probe in detecting voltage.
In an embodiment of the present utility model, described electro-migration testing structure also includes abnormality detection wire, described
Abnormality detection wire is connected with described 7th pad, and described abnormality detection wire is located at same gold with described first test lead
Belong to layer.
In an embodiment of the present utility model, described isothermal electro-migration testing structure includes the second test lead, institute
The one end stating the second test lead is connected with described 3rd pad and described 4th pad by connecting wire, described second test
The other end of wire is connected with described 7th pad and described 8th pad by connecting wire；Described second test lead and institute
State connecting wire and be located at same metal level.
In an embodiment of the present utility model, described 3rd pad and described 8th pad input weldering as electric current
Disk, is suitable to by probe connecting test current source；Described 4th pad and described 7th pad, as voltage tester pad, are suitable to
By probe in detecting voltage.
In an embodiment of the present utility model, described stress migration test structure includes the 3rd test lead, described
One end of 3rd test lead is connected with described 3rd pad and described 4th pad by connecting wire, and described 3rd test is led
The line other end is connected with described 5th pad and described 6th pad by connecting wire；Wherein said 3rd test lead includes
Positioned at two parts of different metal layer, and it is connected by metal plug between described two parts positioned at different metal layer.
In an embodiment of the present utility model, described 3rd pad and described 6th pad input weldering as electric current
Disk, is suitable to by probe connecting test current source；Described 4th pad and described 5th pad, as voltage tester pad, are suitable to
By probe in detecting voltage.
As described above, reliability testing structure of the present utility model, have the advantages that
1st, reliability testing structure of the present utility model substitutes detached electro-migration testing structure in prior art, stress
Migration test structure and isothermal electro-migration testing structure are so that electro-migration testing structure, stress migration test structure and isothermal are electric
Migration test structure occurs in groups, will not take the valuable area on wafer more, also will not increase the cost of manufacture of test structure.
2nd, reliability testing structure of the present utility model still connects electro-migration testing structure, stress migration using four-end method
Test structure and isothermal electro-migration testing structure are it is ensured that accurate test.
3rd, using the design sharing pad, stress migration test structure shares reliability testing structure of the present utility model
The part pad of electro-migration testing structure and isothermal electro-migration testing structure, is efficiently solved and is separated and area due to test structure
Limited and lead to a limited number of problem of test structure, considerably increase the quantity of test structure.
4th, reliability testing structure of the present utility model makes the quantity of test structure in equal area increase, and makes identical simultaneously
The test structure occupied area of quantity reduces to 47%, improves the utilization rate of wafer；The quantity increase of test structure is led simultaneously
Apply in the wafer number minimizing of test, reduce testing cost.
Brief description
Fig. 1 is the priority schematic diagram of various reliability testings in prior art.
Fig. 2 is the schematic diagram of this utility model reliability testing structure.
Fig. 3 is the schematic diagram of the electro-migration testing structure in reliability testing structure of the present utility model.
Fig. 4 is the schematic diagram of the isothermal electro-migration testing structure in reliability testing structure of the present utility model.
Fig. 5 is the schematic diagram of the stress migration test structure in reliability testing structure of the present utility model.
Component label instructions
1 pad assembly
11 first pads
12 second pads
13 the 3rd pads
14 the 4th pads
15 the 5th pads
16 the 6th pads
17 the 7th pads
18 the 8th pads
2 electro-migration testing structures
3 isothermal electro-migration testing structures
4 stress migration test structures
5 connecting wires
6 first test leads
7 metal plugs
8 abnormality detection wires
9 second test leads
10 the 3rd test leads
Specific embodiment
Hereinafter embodiment of the present utility model is illustrated by particular specific embodiment, those skilled in the art can be by this
Content disclosed by description understands other advantages of the present utility model and effect easily.
Refer to Fig. 2 to Fig. 5 it should however be clear that structure depicted in this specification institute accompanying drawings, ratio, size etc., all only in order to
Content disclosed in cooperation description, so that those skilled in the art understands and reads, is not limited to this utility model
Enforceable qualificationss, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size
Adjustment, under not affecting this utility model effect that can be generated by and the purpose that can reach, all should still fall in this utility model
In the range of disclosed technology contents obtain and can cover.Meanwhile, in this specification cited as " on ", D score, " left ",
The term of " right ", " middle " and " one " etc., is merely convenient to understanding of narration, and it is enforceable to be not used to restriction this utility model
Scope, being altered or modified of its relativeness, under no essence change technology contents, enforceable when being also considered as this utility model
Category.
Refer to Fig. 2, this utility model provides a kind of reliability testing structure, described reliability testing structure at least wraps
Include:
Electro-migration testing structure 2, isothermal electro-migration testing structure 3, stress migration test structure 4 and be made up of multiple pads
Pad assembly 1；Described electro-migration testing structure 2 pad different from five connects, described isothermal electro-migration testing structure 3 with
Four different pads connect, and described stress migration test structure 4 pad different from four connects；Wherein, described electromigration
Test structure 2 and described isothermal electro-migration testing structure 3 have a shared pad, described electro-migration testing structure 2 and described should
Power migration test structure 4 has two shared pads, described electro-migration testing structure 2 and described isothermal electro-migration testing structure 3 altogether
The pad that pad is shared from described electro-migration testing structure 2 and described stress migration test structure 4 is different pads, institute
Stating isothermal electro-migration testing structure 3 has two shared pads with described stress migration test structure 4.That is, arbitrary pad may
It is total to by two test structures in electro-migration testing structure 2, isothermal electro-migration testing structure 3, stress migration test structure 4
With, but can not possibly be shared by this three test structures simultaneously.
As an example, described electro-migration testing structure 2 and described isothermal electro-migration testing structure 3 are located at described pad respectively
The both sides of assembly 1.
As an example, described pad assembly 1 includes the first to the 8th pad 18 being sequentially arranged at intervals；Described electromigration is surveyed
Examination structure 2 and described first pad 11, described second pad 12, described 5th pad 15, described 6th pad 16 and described
7th pad 17 connects；Described isothermal electro-migration testing structure 3 and described 3rd pad 13, described 4th pad 14, described the
Seven pads 17 and described 8th pad 18 connect；Described stress migration test structure 4 and described 3rd pad 13, the described 4th
Pad 14, described 5th pad 15 and described 6th pad 16 connect.
As an example, the described first to the 8th pad 18 is in rods arranged in horizontal line, is usually located in the Cutting Road of wafer.
As an example, described electro-migration testing structure 2 can be of the prior art any one can test electromigratory
Test structure, is not limited with the present embodiment.
Refer to Fig. 3, in the present embodiment, described electro-migration testing structure 2 includes the first test lead 6, described first
One end of test lead 6 is connected with described first pad 11 and described second pad 12 by connecting wire 5, described first test
The other end of wire 6 is connected with described 5th pad 15 and described 6th pad 16 by connecting wire 5；Described first test is led
Line 6 is located at different metal levels from described connecting wire 5, and passes through between described first test lead 6 and described connecting wire 5
Metal plug 7 is connected.Described metal plug 7 is used for conducting described first test lead 6 and described connecting wire 5, institute
State metal plug 7 and mostly be tungsten plug.
As an example, described first pad 11 and described 6th pad 16, as electric current input pad, are suitable to by probe
Connecting test current source；Described second pad 12 and described 5th pad 15, as voltage tester pad, are suitable to examine by probe
Survey voltage.Due to the resistance that wire should be avoided during voltage tester to introduce as far as possible, the wire being connected to pad should be as short as possible,
Therefore, the position of the voltage tester pad of described electro-migration testing structure 2 is located proximate to described first than testing current pad
Test lead 6.
As an example, described electro-migration testing structure 2 also includes abnormality detection wire 8, described abnormality detection wire 8 and institute
State the 7th pad 17 to connect, and described abnormality detection wire 8 is located at same metal level with described first test lead 6.Described different
Often detection wire 8 is independent with electro-migration testing structure 2 in form, and described abnormality detection wire 8 is to prevent from testing
Middle abnormal generation, to protect test structure.
As an example, described isothermal electro-migration testing structure 3 can be of the prior art any one can test isothermal
Electromigratory test structure, is not limited with the present embodiment.
Refer to Fig. 4, in the present embodiment, described isothermal electro-migration testing structure 3 includes the second test lead 9, described
One end of second test lead 9 is connected with described 3rd pad 13 and described 4th pad 14 by connecting wire 5, and described second
The other end of test lead 9 is connected with described 7th pad 17 and described 8th pad 18 by connecting wire 5；Described second survey
Examination wire 9 and described connecting wire 5 are located at same metal level.
As an example, described 3rd pad 13 and described 8th pad 18, as electric current input pad, are suitable to by probe
Connecting test current source；Described 4th pad 14 and described 7th pad 17, as voltage tester pad, are suitable to examine by probe
Survey voltage.With described electro-migration testing structure 2 in the same manner, the position ratio of described isothermal electro-migration testing structure 3 voltage tester pad
Testing current pad be located proximate to described second test lead 9.
As an example, described stress migration test structure 4 can be of the prior art any one can move test stress
The test structure moved, is not limited with the present embodiment.
Refer to Fig. 5, in the present embodiment, described stress migration test structure 4 includes the 3rd test lead 10, described
One end of three test leads 10 is connected with described 3rd pad 13 and described 4th pad 14 by connecting wire 5, and the described 3rd
Test lead 10 other end is connected with described 5th pad 15 and described 6th pad 16 by connecting wire 5；Wherein said
Three test leads 10 include the two parts positioned at different metal layer, and pass through gold between described two parts positioned at different metal layer
Belong to connector 7 to be connected.
As an example, described 3rd pad 13 and described 6th pad 16, as electric current input pad, are suitable to by probe
Connecting test current source；Described 4th pad 14 and described 5th pad 15, as voltage tester pad, are suitable to examine by probe
Survey voltage.With described electro-migration testing structure 2 and described isothermal electro-migration testing structure 3 in the same manner, described stress migration test knot
The position of the voltage tester pad of structure 4 is located proximate to described second test lead 9 than testing current pad.
The operation principle of above-mentioned reliability testing structure is as follows:
When needing to carry out electro-migration testing, electric current is applied to described first pad 11 by probe, the described 6th is welded
Disk 16 is grounded, and forms the electric current by described electro-migration testing structure 2 with this, then by the second pad 12 described in probe in detecting and
Voltage between described 5th pad 15 can determine whether to lose efficacy.And now do not have electric current to pass through described isothermal electro-migration testing
Structure 3 and described stress migration test structure 4, described isothermal electro-migration testing structure 3 and described stress migration test structure 4 are not
Work, does not produce impact to described electro-migration testing structure 2.
When needing to carry out isothermal electro-migration testing, electric current is applied to described 3rd pad 13 by probe, by described the
Eight pads 18 are grounded, and form the electric current by described isothermal electro-migration testing structure 3 with this, then pass through the 4th described in probe in detecting
Voltage between pad 14 and described 8th pad 17 can determine whether to lose efficacy.And now there is no electric current by described electromigration
Test structure 2 and described stress migration test structure 4, described electro-migration testing structure 2 and described stress migration test structure 4 are not
Work, does not produce impact to described isothermal electro-migration testing structure 3.
When needing to carry out stress migration test, electric current is applied to described 3rd pad 13 by probe, by the described 6th
Pad 16 is grounded, and forms the electric current by described stress migration test structure 4 with this, then passes through the 4th pad described in probe in detecting
Voltage between 14 and described 5th pad 15 can get corresponding resistance, due to being connected to described 4th pad 14 and described
The wire of the 5th pad 15 is comparatively short, is approximately considered the resistance that the resistance obtaining is described stress migration test structure 4, then
Judge whether to lose efficacy by the resistance of described stress migration test structure 4.Although and now applying on described 3rd pad 13
There is electric current, but described 7th pad 17, the 8th pad 18, described first pad 11 and described 6th pad 16 are all hanging, because
This does not have electric current to pass through described electro-migration testing structure 2 and described isothermal electro-migration testing structure 3, described electro-migration testing structure
2 and described isothermal electro-migration testing structure 3 do not work, impact is not produced on described stress migration test structure 4.
In sum, this utility model provides a kind of reliability testing structure, and described reliability testing structure at least includes:
Electro-migration testing structure 2, isothermal electro-migration testing structure 3, stress migration test structure 4 and the pad group being made up of multiple pads
Part 1；Take full advantage of limited testing weld pad quantity and limited wafer area, described electro-migration testing structure 2 and five are not
Same pad connects, and described isothermal electro-migration testing structure 3 pad different from four connects, described stress migration test structure
4 pads different from four connect；Wherein, described electro-migration testing structure 2 and described isothermal electro-migration testing structure 3 have one
Shared pad, described electro-migration testing structure 2 and described stress migration test structure 4 have two shared pads, described electromigration
The pad that test structure 2 and described isothermal electro-migration testing structure 3 share is moved with described electro-migration testing structure 2 and described stress
Moving the shared pad of test structure 4 is different pads, and described isothermal electro-migration testing structure 3 and described stress migration test are tied
Structure 4 has two shared pads.Namely ensure that arbitrary pad may be by electro-migration testing structure 2, isothermal electro-migration testing structure
3rd, two test structures in stress migration test structure 4 are shared, but can not possibly be shared by this three test structures simultaneously.
Solve in prior art and lead to test structure limited amount and account for due to the separation of each test structure and Cutting Road limited area
With larger wafer area so that crystal round utilization ratio is relatively low, increase the problem of testing cost.
Reliability testing structure of the present utility model includes electro-migration testing structure 2, isothermal electro-migration testing structure 3 and answers
Power migrates test structure 4, is connected using four-end method, improves the accuracy of test；Simultaneously using the design sharing pad, stress
Migration test structure 4 has shared the part pad of electro-migration testing structure and isothermal electro-migration testing structure 3, efficiently solve by
Lead to a limited number of problem of test structure in test structure separation and limited area, considerably increase the number of test structure
Amount；The test structure occupied area simultaneously making equal number reduces to 47%, improves the utilization rate of wafer；Test structure simultaneously
Quantity increase lead to for test wafer number reduce, reduce testing cost.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for limiting this practicality
Type.Any person skilled in the art all can be carried out to above-described embodiment without prejudice under spirit and the scope of the present utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in this utility model
All equivalent modifications being completed under god and technological thought or change, must be covered by claim of the present utility model.
Claims (11)
1. a kind of reliability testing structure is it is characterised in that described reliability testing structure at least includes:
Electro-migration testing structure, isothermal electro-migration testing structure, stress migration test structure and the pad being made up of multiple pads
Assembly；
The described electro-migration testing structure pad different from five connect, and described isothermal electro-migration testing structure is different from four
Pad connects, and the described stress migration test structure pad different from four connects；Wherein, described electro-migration testing structure and institute
Stating isothermal electro-migration testing structure has a shared pad, described electro-migration testing structure and described stress migration test structure to have
The pad that two shared pads, described electro-migration testing structure and described isothermal electro-migration testing structure share and described electromigration
The pad that test structure and described stress migration test structure share is different pads, described isothermal electro-migration testing structure with
Described stress migration test structure has two shared pads.
2. reliability testing structure according to claim 1 is it is characterised in that described electro-migration testing structure and described etc.
Warm electro-migration testing structure is located at the both sides of described pad assembly respectively.
3. reliability testing structure according to claim 1 is it is characterised in that described pad assembly includes the row of interval successively
First to the 8th pad of row；Described electro-migration testing structure and described first pad, described second pad, described 5th weldering
Disk, described 6th pad and described 7th pad connect；Described isothermal electro-migration testing structure and described 3rd pad, described
4th pad, described 7th pad and described 8th pad connect；Described stress migration test structure and described 3rd pad,
Described 4th pad, described 5th pad and described 6th pad connect.
4. reliability testing structure according to claim 3 is it is characterised in that the described first to the 8th pad is in in-line
Arrangement.
5. reliability testing structure according to claim 3 is it is characterised in that described electro-migration testing structure includes first
Test lead, one end of described first test lead is connected with described first pad and described second pad by connecting wire,
The other end of described first test lead is connected with described 5th pad and described 6th pad by connecting wire；Described first
Test lead is located at different metal levels from described connecting wire, and logical between described first test lead and described connecting wire
Cross metal plug to be connected.
6. reliability testing structure according to claim 5 is it is characterised in that described first pad and described 6th pad
As electric current input pad, it is suitable to by probe connecting test current source；Described second pad and described 5th pad are as electricity
Pressure testing weld pad, is suitable to by probe in detecting voltage.
7. reliability testing structure according to claim 5 it is characterised in that described electro-migration testing structure also include different
Often detection wire, described abnormality detection wire is connected with described 7th pad, and described abnormality detection wire and described first survey
Examination wire is located at same metal level.
8. reliability testing structure according to claim 3 is it is characterised in that described isothermal electro-migration testing structure includes
Second test lead, one end of described second test lead is passed through connecting wire and is connected with described 3rd pad and described 4th pad
Connect, the other end of described second test lead is connected with described 7th pad and described 8th pad by connecting wire；Described
Second test lead is located at same metal level with described connecting wire.
9. reliability testing structure according to claim 8 is it is characterised in that described 3rd pad and described 8th pad
As electric current input pad, it is suitable to by probe connecting test current source；Described 4th pad and described 7th pad are as electricity
Pressure testing weld pad, is suitable to by probe in detecting voltage.
10. reliability testing structure according to claim 3 is it is characterised in that described stress migration test structure includes
3rd test lead, one end of described 3rd test lead is passed through connecting wire and is connected with described 3rd pad and described 4th pad
Connect, the described 3rd test lead other end is connected with described 5th pad and described 6th pad by connecting wire；Wherein institute
State two parts that the 3rd test lead includes positioned at different metal layer, and pass through between described two parts positioned at different metal layer
Metal plug is connected.
11. reliability testing structures according to claim 10 are it is characterised in that described 3rd pad and the described 6th welds
Disk, as electric current input pad, is suitable to by probe connecting test current source；Described 4th pad and described 5th pad conduct
Voltage tester pad, is suitable to by probe in detecting voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620831432.1U CN205900538U (en) | 2016-08-02 | 2016-08-02 | Reliability test structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620831432.1U CN205900538U (en) | 2016-08-02 | 2016-08-02 | Reliability test structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369670A (en) * | 2017-08-31 | 2017-11-21 | 长江存储科技有限责任公司 | A kind of three-dimensional storage electro-migration testing structure and preparation method thereof |
| CN111007387A (en) * | 2019-12-07 | 2020-04-14 | 苏州容启传感器科技有限公司 | Test chip and integration method |
| CN116403993A (en) * | 2023-05-29 | 2023-07-07 | 粤芯半导体技术股份有限公司 | Wafer acceptance test structure and detection method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369670A (en) * | 2017-08-31 | 2017-11-21 | 长江存储科技有限责任公司 | A kind of three-dimensional storage electro-migration testing structure and preparation method thereof |
| CN107369670B (en) * | 2017-08-31 | 2019-11-26 | 长江存储科技有限责任公司 | A kind of three-dimensional storage electro-migration testing structure and preparation method thereof |
| CN111007387A (en) * | 2019-12-07 | 2020-04-14 | 苏州容启传感器科技有限公司 | Test chip and integration method |
| CN116403993A (en) * | 2023-05-29 | 2023-07-07 | 粤芯半导体技术股份有限公司 | Wafer acceptance test structure and detection method |
| CN116403993B (en) * | 2023-05-29 | 2023-08-29 | 粤芯半导体技术股份有限公司 | Wafer acceptance test structure and detection method |
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