CN201022075Y - Testing structure for electronic migration rate - Google Patents
Testing structure for electronic migration rate Download PDFInfo
- Publication number
- CN201022075Y CN201022075Y CN 200620162628 CN200620162628U CN201022075Y CN 201022075 Y CN201022075 Y CN 201022075Y CN 200620162628 CN200620162628 CN 200620162628 CN 200620162628 U CN200620162628 U CN 200620162628U CN 201022075 Y CN201022075 Y CN 201022075Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
An electron mobility testing structure comprises a first testing end and a second testing end, wherein the middle section between the first testing end and the second testing end comprises a first wire, a second wire and a third wire. The first wire is connected with the second wire through a first connecting hole, the second wire is connected with the third wire through at least two second connecting holes, and the first testing end is connected with the second testing end through the first wire, the first connecting hole, the second wire, at least two second connecting holes and the third wire. The utility model is characterized in that the testing structure includes a fourth wire and a fifth wire, wherein the fourth wire is connected with the first wire, and the fifth wire is connected with the second wire. The electron mobility testing structure of the utility model adds a single testing wire to a single connecting hole, and can singly test the connecting hole in the mean time of testing the electron mobility of the testing structure including the connecting hole and the wire, thereby being available of correctly measuring the bearing ability of a single connecting hole on heat stress and electrical stress, correctly positioning the connecting hole which gets out of order on the electrical resistance, and non influence on the measuring result of the entire testing structure.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, particularly a kind of test structure of electron mobility.
Background technology
In so large-scale integrated circuit, highly reliable between the device, highdensity connection not only will be carried out in individual layer, and need between the multilayer interconnection layer, carry out, utilize lead and the connecting of the metal connecting hole between the interconnection layer in the interconnection layer usually to semiconductor device.Fig. 1 is semiconductor device and interconnection structure rough schematic view.As shown in Figure 1, the back segment that semiconductor device is made (backend of line, BEOL) technology before having the transistorized substrate surface plated metal of metal-oxide semiconductor (MOS) (MOS) dielectric layer (pre-metal dielectric, PMD).Metal connecting hole in the pmd layer is connected to the upper layer interconnects layer with MOS transistor.Usually have the several layers interconnection layer on the pmd layer, all have plain conductor 10 in every layer of interconnection layer, the plain conductor 10 in each interconnection layer connects by the metal connecting hole in the dielectric layer between the interconnection layer 20.Thereby MOS transistor is connected to each other by lead in these interconnection layers 10 and metal connecting hole 20 and forms the semiconductor device with specific function.
The electrical connection properties of plain conductor 10 and metal connecting hole 20 directly influences the performance of semiconductor device, and particularly metal connecting hole 20, and it is important that its electric conductivity plays a part to cause the pass to the reliable interconnect between the plain conductor 10.Single connecting hole is the place that thermal stress and electric stress are comparatively concentrated, and is prone to defective (defect), especially for the atomic little connecting hole in aperture in the submicron component.Usually test the electric conductivity of metal connecting hole 20 by the detected electrons mobility.
Fig. 2 and Fig. 3 are existing Electron mobility test structure schematic diagram, and as shown in Figures 2 and 3, plain conductor 100 is connected to plain conductor 200 by metal connecting hole 150, and lead 200 is connected to plain conductor 300 by metal connecting hole 250 and 260 again.During test, apply voltage at 1 end and 2 ends, electronics e produces and moves, and its direction of motion is shown in the direction of arrow among the figure.Because the polarity of voltage that test structure applies shown in Fig. 2 and Fig. 3 is opposite, so the electronics e direction of motion shown in Fig. 2 and Fig. 3 is opposite.Can record electron mobility by the resistance that detects between 1 end and 2 ends.In the existing this test structure, in the resistance value that applies between 1 end and 2 ends between voltage measurement 1 end and 2 ends, increase along with magnitude of voltage, when resistance value occurs when unusual, because connecting hole 150 and 250 and 260 is the relations of connecting, can't test separately connecting hole, accurately the fault location connecting hole.
The utility model content
The purpose of this utility model is to provide a kind of test structure of electron mobility, can test separately also metal connecting hole and can accurately locate the connecting hole that breaks down.
For achieving the above object, the utility model provides a kind of test structure of electron mobility, described test structure has first test lead (1) and second test lead (2), comprise first lead (100) between described first test lead (1) and second test lead (2), second lead (200) and privates (300), link to each other by first connecting hole (150) between described first lead (100) and second lead (200), pass through at least two second connecting holes (250 between described second lead (200) and the privates (300), 260) link to each other, described first test lead (1) is by first lead (100), first connecting hole (150), second lead (200), at least two second connecting holes (250,260) and privates (300) be electrically connected to second test lead (2), it is characterized in that: described test structure also comprises privates (110) and the 5th lead (210), described privates (110) link to each other with described first lead (100), and described the 5th lead (210) links to each other with described second lead (200).
Described privates (110) link to each other with the end that described first lead (100) is connected with described first connecting hole (150).
Described the 5th lead (210) links to each other with the end that described second lead (200) is connected with described first connecting hole (150).
Described test structure also comprises the 6th lead (220), and described the 6th lead (220) links to each other with described second lead (200).
Described the 6th lead (220) links to each other with the end that described second lead (200) is connected with described first connecting hole (150).
The utility model provides the test structure of another kind of electron mobility, described test structure has first test lead (1) and second test lead (2), comprise first lead (100) between described first test lead (1) and second test lead (2), second lead (200) and privates (300), link to each other by first connecting hole (150) between described first lead (100) and second lead (200), pass through at least two second connecting holes (250 between described second lead (200) and the privates (300), 260) link to each other, described first test lead (1) is by first lead (100), first connecting hole (150), second lead (200), at least two second connecting holes (250,260) and privates (300) be connected to second test lead (2), it is characterized in that: described test structure also comprises privates (110), the 5th lead (210) and the 6th lead (220), described privates (110) link to each other with described first lead (100), described the 5th lead (210) links to each other with described second lead (200), and described the 6th lead (220) links to each other with described second lead (200).
Described privates (110) link to each other with the end that described first lead (100) is connected with described first connecting hole (150).
Described the 5th lead (210) links to each other with the end that described second lead (200) is connected with described first connecting hole (150).
Described the 6th lead (220) links to each other with the end that described second lead (200) is connected with described first connecting hole (150).
Compared with prior art, the utlity model has following advantage:
Electron mobility test structure of the present utility model has increased independent test lead to single connecting hole on the basis of original test structure, can test separately connecting hole when detection comprises the electron mobility of test structure of connecting hole and lead.Therefore, can accurately measure the ability to bear of single connecting hole, accurately locate the connecting hole that resistance value breaks down, and not influence measurement result whole test structure to thermal stress and electric stress.
Description of drawings
By the more specifically explanation of the preferred embodiment of the present utility model shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present utility model will be more clear.Identical parts have used identical Reference numeral in the accompanying drawing.Accompanying drawing is not painstakingly drawn in proportion, focuses on illustrating purport of the present utility model.In the accompanying drawings, for clarity sake, amplified the thickness in layer and zone.
Fig. 1 is semiconductor device and interconnection structure rough schematic view;
Fig. 2 and Fig. 3 are existing Electron mobility test structure schematic diagram;
Fig. 4 is the Electron mobility test structure schematic diagram according to the utility model embodiment.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that fully understand the utility model.But the utility model can be implemented much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of the utility model intension.Therefore the utility model is not subjected to the restriction of following public concrete enforcement.
Fig. 4 is the Electron mobility test structure schematic diagram according to the utility model embodiment.Electron mobility test structure of the present utility model can be arranged in the certain layer of any one test zone of wafer according to actual wafer layout situation.Form the technology of this structure, comprise the formation technology, plain conductor 100,200 of metal connecting hole 150,250 and 260 and 300 formation technology, identical with the formation technology of metal connecting hole in the device and plain conductor, so its test result is representative.As shown in Figure 4, Electron mobility test structure of the present utility model has test lead 1 and test lead 2, comprise lead 100, lead 200 and lead 300 between test lead 1 and the test lead 2, wherein link to each other by connecting hole 150 between lead 100 and the lead 200, link to each other with 260 by at least two connecting holes 250 between lead 200 and the lead 300, test lead 1 by lead 100, connecting hole 150, lead 200, connecting hole 250 and 260 and lead 300 be connected to test lead 2.In addition, Electron mobility test structure of the present utility model also comprises lead 110 and lead 210, can also comprise lead 220, and wherein lead 110 links to each other with lead 100, and lead 210 links to each other with lead 200, and lead 220 links to each other with lead 200.According to the utility model, the end that is connected with connecting hole 150 of lead 110 and lead 100 links to each other; The end that is connected with connecting hole 150 of lead 210 and lead 200 links to each other; The end that is connected with connecting hole 150 of lead 220 and lead 200 links to each other.
During test, apply voltage at 1 end and 2 ends, electronics e produces and moves, and its direction of motion is shown in the direction of arrow among the figure.Can record electron mobility by the resistance that detects between 1 end and 2 ends.When conventionally test, 1 end and 2 ends apply the magnitude of voltage of normal range (NR) to test the electron mobility between 1 end and 2 ends.Usually in order to test the reliability of connecting hole and lead, need carry out type testing, promptly strengthen 1 end and 2 terminal voltages limiting voltage value to the designs parameter, with under test connecting hole 150,250 and the 260 limiting voltage values to the ability to bear of thermal stress and electric stress.Under the situation of type testing, the thermal stress of single connecting hole 150 and electric stress are comparatively concentrated, are prone to defective (defect).Test structure of the present utility model can be tested the resistance variations of connecting hole 150 separately by the resistance of measuring between 1. holding and 4. holding, thereby measure its electron mobility, and then determine its ability to bear to limit heat stress and electric stress.Perhaps pass through to measure the resistance of 2. holding and 4. holding, and the resistance of 1. holding and 3. holding, 2. end and the resistance of 3. holding all can be tested the performance of connecting hole 150 separately.Can utilize the method for measurement of four-wire system in addition, i.e. resistance between 1. and 2. measurement is held and 3. held and 4. hold obtains the resistance value of connecting hole 150 more accurately.
The utility model can accurately be measured the ability to bear of 150 pairs of thermal stress of single connecting hole and electric stress, accurately locatees the connecting hole that resistance value breaks down, and for example 150.And above-mentioned test process does not influence the electron mobility measurement result between the test lead 1 and 2 of whole test structure.
The above only is preferred embodiment of the present utility model, is not the utility model is done any pro forma restriction.Though the utility model discloses as above with preferred embodiment, yet be not in order to limit the utility model.Any those of ordinary skill in the art, do not breaking away under the technical solutions of the utility model scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solutions of the utility model are made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solutions of the utility model, all still belongs in the scope of technical solutions of the utility model protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present utility model.
Claims (9)
1. the test structure of an electron mobility, described test structure has first test lead (1) and second test lead (2), comprise first lead (100) between described first test lead (1) and second test lead (2), second lead (200) and privates (300), link to each other by first connecting hole (150) between described first lead (100) and second lead (200), pass through at least two second connecting holes (250 between described second lead (200) and the privates (300), 260) link to each other, described first test lead (1) is by first lead (100), first connecting hole (150), second lead (200), at least two second connecting holes (250,260) and privates (300) be electrically connected to second test lead (2), it is characterized in that: described test structure also comprises privates (110) and the 5th lead (210), described privates (110) link to each other with described first lead (100), and described the 5th lead (210) links to each other with described second lead (200).
2. test structure as claimed in claim 1 is characterized in that: described privates (110) link to each other with the end that described first lead (100) is connected with described first connecting hole (150).
3. test structure as claimed in claim 1 is characterized in that: described the 5th lead (210) links to each other with the end that described second lead (200) is connected with described first connecting hole (150).
4. test structure as claimed in claim 1 is characterized in that: described test structure also comprises the 6th lead (220), and described the 6th lead (220) links to each other with described second lead (200).
5. test structure as claimed in claim 4 is characterized in that: described the 6th lead (220) links to each other with the end that described second lead (200) is connected with described first connecting hole (150).
6. the test structure of an electron mobility, described test structure has first test lead (1) and second test lead (2), comprise first lead (100) between described first test lead (1) and second test lead (2), second lead (200) and privates (300), link to each other by first connecting hole (150) between described first lead (100) and second lead (200), pass through at least two second connecting holes (250 between described second lead (200) and the privates (300), 260) link to each other, described first test lead (1) is by first lead (100), first connecting hole (150), second lead (200), at least two second connecting holes (250,260) and privates (300) be connected to second test lead (2), it is characterized in that: described test structure also comprises privates (110), the 5th lead (210) and the 6th lead (220), described privates (110) link to each other with described first lead (100), described the 5th lead (210) links to each other with described second lead (200), and described the 6th lead (220) links to each other with described second lead (200).
7. test structure as claimed in claim 6 is characterized in that: described privates (110) link to each other with the end that described first lead (100) is connected with described first connecting hole (150).
8. test structure as claimed in claim 6 is characterized in that: described the 5th lead (210) links to each other with the end that described second lead (200) is connected with described first connecting hole (150).
9. test structure as claimed in claim 6 is characterized in that: described the 6th lead (220) links to each other with the end that described second lead (200) is connected with described first connecting hole (150).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620162628 CN201022075Y (en) | 2006-12-28 | 2006-12-28 | Testing structure for electronic migration rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620162628 CN201022075Y (en) | 2006-12-28 | 2006-12-28 | Testing structure for electronic migration rate |
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| CN201022075Y true CN201022075Y (en) | 2008-02-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200620162628 Expired - Lifetime CN201022075Y (en) | 2006-12-28 | 2006-12-28 | Testing structure for electronic migration rate |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339815A (en) * | 2010-07-15 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Test structure for analyzing through-hole type metal-interconnected electromigration reliability |
| CN104701300A (en) * | 2013-12-10 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | Metal interlayer medium testing structure and method |
| CN105845664A (en) * | 2016-05-20 | 2016-08-10 | 大连理工大学 | Plated through hole structure based on redundancy metal and electromigration correction method |
| CN106684008A (en) * | 2015-11-05 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | Reliability test structure of semiconductor device and test method thereof |
-
2006
- 2006-12-28 CN CN 200620162628 patent/CN201022075Y/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339815A (en) * | 2010-07-15 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Test structure for analyzing through-hole type metal-interconnected electromigration reliability |
| CN104701300A (en) * | 2013-12-10 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | Metal interlayer medium testing structure and method |
| CN104701300B (en) * | 2013-12-10 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | A kind of metal interlayer medium test structure and method of testing |
| CN106684008A (en) * | 2015-11-05 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | Reliability test structure of semiconductor device and test method thereof |
| CN106684008B (en) * | 2015-11-05 | 2019-09-27 | 中芯国际集成电路制造(上海)有限公司 | The reliability testing structure and its test method of semiconductor devices |
| CN105845664A (en) * | 2016-05-20 | 2016-08-10 | 大连理工大学 | Plated through hole structure based on redundancy metal and electromigration correction method |
| CN105845664B (en) * | 2016-05-20 | 2018-12-18 | 大连理工大学 | A kind of via structure and electromigration modification method based on redundancy metal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Semiconductor Manufacturing International (Beijing) Corporation Assignor: Semiconductor Manufacturing International (Shanghai) Corporation Contract fulfillment period: 2009.4.29 to 2014.4.29 Contract record no.: 2009990000626 Denomination of utility model: Testing structure for electronic migration rate Granted publication date: 20080213 License type: Exclusive license Record date: 20090605 |
|
| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.4.29 TO 2014.4.29; CHANGE OF CONTRACT Name of requester: SEMICONDUCTOR MANUFACTURING INTERNATIONAL ( BEIJIN Effective date: 20090605 |
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| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING (SHANGHAI) INTERNATIONAL CORPORATION Effective date: 20121106 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20121106 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CX01 | Expiry of patent term |
Granted publication date: 20080213 |
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| EXPY | Termination of patent right or utility model |