CN103094255A - Interconnection electromigration test structure - Google Patents
Interconnection electromigration test structure Download PDFInfo
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- CN103094255A CN103094255A CN2013100622310A CN201310062231A CN103094255A CN 103094255 A CN103094255 A CN 103094255A CN 2013100622310 A CN2013100622310 A CN 2013100622310A CN 201310062231 A CN201310062231 A CN 201310062231A CN 103094255 A CN103094255 A CN 103094255A
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Abstract
The invention provides an interconnection electromigration test structure which comprises a to-be-tested structure, a lead structure, n layers of electric conduction structures and dielectric media. The lead structure comprises a first lead and a second lead. The n layers of electric conduction structures are sequentially stacked from top to bottom, and are placed on the lower layers of the to-be-tested structure and the lead structure. Every layer of electric conduction structure comprises a first through hole structure, a first connection structure, a second through hole structure, a third through hole structure, a second connection structure and a fourth through hole structure, wherein n is a positive integer which is greater than or equal to two. The to-be-tested structure, the first lead, the second lead, the first through hole structure, the first connection structure, the second through hole structure, the third through hole structure, the second connection structure and the fourth through hole structure are insulated and spaced through the dielectric media, wherein the first through hole structure, the first connection structure, the second through hole structure, the third through hole structure, the second connection structure and the fourth through hole structure are placed on every layer of electric conduction structure. The interconnection electromigration test structure can accurately assess electromigration of the to-be-tested structure, and so that the accuracy of electromigration analysis of the to-be-tested structure can be guaranteed.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly the electromigratory test structure of a kind of interconnection.
Background technology
Electromigration (electromigration, be called for short EM) be a kind of material (material) transfer phenomena that causes due to progressively moving of conductor Atom, its inherent mechanism is momentum (momentum) transfer between the metallic atom of conduction electrons and diffusion.For the occasion that has high direct current density (high directcurrent densities), for example in microelectronic, electromigration effect is very crucial.When electromigration occured, the part momentum of a moving electron was transferred to contiguous activated atom, and this can cause this atom to leave its home position.Along with passage of time, this strength can cause that the atom of huge quantity is away from their home position.The electromigration meeting causes occurring fracture (break) in conductor (especially narrow wire) or breach (gap) stops electric current to occur, this fracture or breach are called as cavity (void) or internal failure (intemal failure), i.e. open circuit.Electromigration also can cause one in conductor atom packing (pile up) and form unexpected electrical connection to proximity conductor drift (drift), this defective is called as hillock inefficacy (hillock failure) or whisker lost efficacy (whisker failure), i.e. short circuit.Above-mentioned two class defectives all can cause fault.
Usually, assess the deelectric transferred ability of device by testing certain test structure.In the prior art, interconnect electromigratory test structure as shown in Figure 1, and the electromigratory test structure 100 of described interconnection comprises treats geodesic structure 110, first lead-in wire 121, second lead-in wire the 122 and first through-hole structure 131, the first syndeton 141, the second through-hole structure 132, third through-hole structure 133, the second syndeton 142 and fourth hole structure 134.In Fig. 1, apply voltage respectively on first lead-in wire the 121 and second lead-in wire 122, make electric current flow to and treat geodesic structure 110 by flow through the first syndeton 141 and the second through-hole structure 132 of the first through-hole structure 131, electric current flow to the other end from an end for the treatment of geodesic structure 110, by third through-hole structure 133, the second syndeton 142 and fourth hole structure 134, flow to the second lead-in wire 122, thereby measure the electromigration for the treatment of geodesic structure 110, for example a zone in Fig. 1.
yet, because the characteristic size of integrated circuit is more and more less, particularly arrive 45nm when following, the thickness of lower interconnection is more and more thinner, the gap of the thickness that interconnection interconnects at the middle and upper levels and the thickness of lower interconnection is increasing, and make the electromigratory test structure of interconnection of the prior art can't measure really the electromigration for the treatment of geodesic structure 110, as shown in Figure 1, in the electromigratory test structure of interconnection in the prior art, the cavity is created in the lower interconnection line of syndeton and through-hole structure contact position, for example, because the cross-sectional area of described third through-hole structure 133 is limited, so the current density near described second syndeton 142 places of described third through-hole structure 133 is larger, the cavity is created in described the second syndeton 142 near the b zone of described third through-hole structure 133, as shown in Figure 1, and can't measure accurately the electromigration for the treatment of geodesic structure 110.
Therefore, how to provide a kind of interconnection electromigratory test structure, the energy accurate evaluation be treated the electromigration of geodesic structure, thereby the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance, has become the problem that those skilled in the art need to solve.
Summary of the invention
The object of the present invention is to provide the electromigratory test structure of a kind of interconnection, the energy accurate evaluation be treated the electromigration of geodesic structure, thereby the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance.
For solving the problems of the technologies described above, the invention provides the electromigratory test structure of a kind of interconnection, the electromigratory test structure of described interconnection comprises:
Treat geodesic structure;
Pin configuration comprises the first lead-in wire and the second lead-in wire;
The conductive structure that the n layer stacks gradually from top to bottom, be positioned at the described lower floor that treats geodesic structure and described pin configuration, the described conductive structure of every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure, wherein, n is the positive integer more than or equal to 2, and described pin configuration and conductive structure are used to describedly treats that geodesic structure provides electric current; And
Dielectric, described treat geodesic structure, first the lead-in wire, second the lead-in wire, every one deck the first through-hole structure, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure by described dielectric insulation interval.
better, described the first lead-in wire is connected with an end of ground floor the first syndeton by ground floor the first through-hole structure, the other end of described ground floor the first syndeton treats that with described an end of geodesic structure is connected by ground floor the second through-hole structure, the described other end for the treatment of geodesic structure is connected with an end of ground floor the second syndeton by ground floor third through-hole structure, and the other end of described ground floor the second syndeton passes through ground floor fourth hole structure structure and described second and goes between and be connected, one end of described m-1 layer the first syndeton is connected with an end of m layer the first syndeton by m layer the first through-hole structure, the other end of described m layer the first syndeton is connected with the other end of described m-1 layer the first syndeton by m layer the second through-hole structure, the other end of described m-1 layer the second syndeton is connected with an end of m layer the second syndeton by m layer third through-hole structure, the other end of described m layer the second syndeton is connected with an end of described m-1 layer the first syndeton by m layer fourth hole structure structure, wherein, 2≤m≤n.
Better, described ground floor the second through-hole structure and described ground floor third through-hole structure are a through hole.
Better, described ground floor the first through-hole structure, described ground floor fourth hole structure, m layer the first through-hole structure, m layer the second through-hole structure, m layer third through-hole structure, m layer fourth hole structure are the through hole that is arranged side by side more than two.
Better, describedly treat that geodesic structure and described pin configuration are positioned at same layer.
Better, described the first lead-in wire and the second lead-in wire are bulk.
Better, the width of described the first lead-in wire is more than or equal to the described width for the treatment of geodesic structure, and the width of described the second lead-in wire is more than or equal to the described width for the treatment of geodesic structure.
Better, the first syndeton and second syndeton of the described conductive structure of every one deck are positioned at same layer.
Better, described the first syndeton and the second syndeton are bar shaped.
Better, the width of described the first syndeton is more than or equal to the described width for the treatment of geodesic structure, and the width of described the second syndeton is more than or equal to the described width for the treatment of geodesic structure.
Better, describedly treat that the material of geodesic structure is metal, the material of described pin configuration is metal, the material of conductive structure is metal.
Better, described dielectric material has the dielectric constant less than or equal to 4.0.
Better, the combination of one or more in the silica that described dielectric material is silicon dioxide, silicon nitride, silicon oxynitride or carbon dope.
Compared with prior art, the electromigratory test structure of interconnection provided by the invention has the following advantages:
1, the electromigratory test structure of interconnection provided by the invention comprises treats geodesic structure, the conductive structure that pin configuration and n layer stack gradually from top to bottom, compared with prior art, described conductive structure is positioned at the described lower floor that treats geodesic structure and described pin configuration, the described conductive structure of every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, the third through-hole structure, the second syndeton and fourth hole structure, described pin configuration and conductive structure are used to describedly treats that geodesic structure provides electric current, the described conductive structure of multilayer has been shared the current density of the described conductive structure of every one deck, avoid electromigratory cavity to be created on described the first syndeton or described the second syndeton, the energy accurate evaluation is treated the electromigration of geodesic structure, thereby the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance.
2, described ground floor second through-hole structure of the electromigratory test structure of interconnection provided by the invention and described ground floor third through-hole structure are a through hole, with the interconnection structure of simulating reality truly, thereby guarantee to treat the accuracy that the electromigration of geodesic structure is analyzed.
3, described ground floor first through-hole structure of the electromigratory test structure of interconnection provided by the invention, described ground floor fourth hole structure, m layer the first through-hole structure, m layer the second through-hole structure, m layer third through-hole structure, m layer fourth hole structure is the through hole that is arranged side by side more than two, to reduce the current density on each through hole, avoid described ground floor the first through-hole structure, described ground floor fourth hole structure, m layer the first through-hole structure, m layer the second through-hole structure, m layer third through-hole structure, m layer fourth hole structure produces the cavity because of electromigration, thereby the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance.
Description of drawings
Fig. 1 is the profile of the electromigratory test structure of interconnection of the prior art;
Fig. 2 is the profile of the electromigratory test structure of interconnection of one embodiment of the invention;
Fig. 3 is the current lead-through schematic diagram of the electromigratory test structure of interconnection of one embodiment of the invention;
Fig. 4 is the profile of the electromigratory test structure of interconnection of another embodiment of the present invention.
Embodiment
Be described in more detail below in conjunction with the manufacture method of schematic diagram to the electromigratory test structure of interconnection of the present invention, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
With way of example, the present invention is described more specifically with reference to accompanying drawing in the following passage.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
core concept of the present invention is to provide a kind of interconnection electromigratory test structure, the electromigratory test structure of this interconnection comprises: treat geodesic structure, the conductive structure that pin configuration and n layer stack gradually from top to bottom, described conductive structure is positioned at the described lower floor that treats geodesic structure and described pin configuration, the described conductive structure of every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, the third through-hole structure, the second syndeton and fourth hole structure, described pin configuration and conductive structure are used to describedly treats that geodesic structure provides electric current, the described conductive structure of multilayer has been shared the current density of the described conductive structure of every one deck.
Illustrate the electromigratory test structure 200 of interconnection of the present embodiment below in conjunction with Fig. 2, wherein, Fig. 2 is the profile of the electromigratory test structure of interconnection of one embodiment of the invention.
in the present embodiment, the electromigratory test structure 200 of described interconnection comprises treats geodesic structure 210, pin configuration and the two-layer conductive structure A that stacks gradually from top to bottom and conductive structure B form, wherein, described pin configuration, conductive structure A and conductive structure B are used to and describedly treat that geodesic structure 210 provides electric current, described pin configuration comprises first lead-in wire the 221 and second lead-in wire 222, conductive structure A and conductive structure B are positioned at the described lower floor that treats geodesic structure 200 and described pin configuration, the described conductive structure of every one deck includes the first through-hole structure 231, the first syndeton 241, the second through-hole structure 232, third through-hole structure 233, the second syndeton 242 and fourth hole structure 234.
Describedly treat that shape, length and the width of geodesic structure 210 are not particularly limited, according to the minimum design dimension of different processing procedures and difference, but treat the electromigration of geodesic structure 210 for convenient test, general describedly treat that geodesic structure 210 is strip.
The shape of described first lead-in wire the 221 and second lead-in wire 222 is not done concrete restriction, can be bar shaped, circle or irregular figure, but in order to facilitate the technique preparation, in the present embodiment, described first lead-in wire the 221 and second lead-in wire 222 is bulk.And better, the width of described the first lead-in wire 221 is more than or equal to the described width for the treatment of geodesic structure 210, and the width of described the second lead-in wire 222 is more than or equal to the described width for the treatment of geodesic structure 210.Described first lead-in wire the 221 and second lead-in wire width of 222 is greater than when the width of geodesic structure 210, can avoid that described first lead-in wire the 221 and second lead-in wire 222 produces the cavity when applying voltage, can extend the time of testing.
Described the first syndeton 241 and the second syndeton 242 are used for to described geodesic structure 210 On currents for the treatment of.Wherein, the shape of described the first syndeton 241 and the second syndeton 242 is not done concrete restriction, can be bar shaped, circle or irregular figure, but in order to facilitate the technique preparation, in the present embodiment, described the first syndeton 241 and the second syndeton 242 are bar shaped.Better, the width of described the first syndeton 241 is more than or equal to the described width for the treatment of geodesic structure 210, and the width of described the second syndeton 242 is more than or equal to the described width for the treatment of geodesic structure 210.The width of described the first syndeton 241 and the second syndeton 242 is greater than when the width of geodesic structure 210, can avoid that described the first syndeton 241 and the second syndeton 242 produce the cavity when applying voltage, can extend the time of testing.
The first through-hole structure 231, the second through-hole structure 232, third through-hole structure 233 and fourth hole structure 234 are used for to described geodesic structure 210 On currents for the treatment of.Described ground floor the second through-hole structure A232 and described ground floor third through-hole structure A233 are a through hole, with the interconnection structure of simulating reality truly, thereby guarantee to treat the accuracy that the electromigration of geodesic structure is analyzed.other through-hole structure, be described ground floor the first through-hole structure A231, described ground floor fourth hole structure A234, the second layer the first through-hole structure B231, the second layer the second through-hole structure B232, second layer third through-hole structure B233 and second layer fourth hole structure B234 all can be the through hole that is arranged side by side more than two, to reduce the current density on each through hole, avoid described ground floor the first through-hole structure A231, described ground floor fourth hole structure A234, the second layer the first through-hole structure B231, the second layer the second through-hole structure B232, second layer third through-hole structure B233 and second layer fourth hole structure B234 produce the cavity because of electromigration, thereby the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance.The shape of the cross-sectional area of through hole does not limit, and is generally circular or square.
better, in the present embodiment, described the first lead-in wire 221 is connected with the end of ground floor the first syndeton A241 by ground floor the first through-hole structure A231, the other end of described ground floor the first syndeton A241 treats that with described an end of geodesic structure 210 is connected by ground floor the second through-hole structure A232, the described other end for the treatment of geodesic structure 210 is connected with the end of ground floor the second syndeton A242 by ground floor third through-hole structure A233, the other end of described ground floor the second syndeton A242 is connected with described the second lead-in wire 222 by ground floor fourth hole structure structure 234.the end of described ground floor the first syndeton A241 is connected with the end of the second layer the first syndeton B241 by the second layer the first through-hole structure B231, the other end of the described second layer the first syndeton B241 is connected with the other end of described ground floor the first syndeton A241 by the second layer the second through-hole structure B232, the other end of described ground floor the second syndeton A242 is connected with the end of the second layer the second syndeton B242 by second layer third through-hole structure B233, the other end of the described second layer the second syndeton B242 is connected with the end of described ground floor the first syndeton A242 by second layer fourth hole structure structure B234.
When apply positive voltage on described the first lead-in wire 221, when the second lead-in wire 222 applies negative voltage, electric current is flowed through respectively and is flow to a described end for the treatment of geodesic structure 210 after described ground floor the first syndeton A241 and the second layer the first syndeton B241, and flow to the described other end for the treatment of geodesic structure 210 to treat that to described geodesic structure 210 tests, then, by the described other end for the treatment of geodesic structure 210, flow through respectively and flow to described the second lead-in wire 222 after described ground floor the second syndeton A242 and the second layer the second syndeton B242, as shown in Figure 3.Shared respectively the electric current of described ground floor the first syndeton A241 and described ground floor the second syndeton A242 due to the second layer the first syndeton B241 and the second layer the second syndeton B242, avoid electromigratory cavity to be created on described the first syndeton A241 or described the second syndeton A242, the described electromigration for the treatment of geodesic structure 210 of energy accurate evaluation, thus the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance.Need to prove, be not limited to apply positive voltage on described the first lead-in wire 221, apply negative voltage at the second lead-in wire 222, can also apply negative voltage on described the first lead-in wire 221, apply positive voltage at the second lead-in wire 222, current opposite in direction.
Describedly treat that the material of geodesic structure 210, pin configuration and conductive structure can be metal or alloy, as metallic copper, metallic aluminium or albronze, general, describedly treat that the material of geodesic structure 210, pin configuration and conductive structure is identical, but also can be different, the material for the treatment of as described geodesic structure 210 is metallic copper, and the material of described pin configuration and conductive structure is metallic aluminium.
Describedly treat that geodesic structure 210, first lead-in wire the 221, second lead-in wire 222, first through-hole structure 231 of every one deck, the first syndeton 241, the second through-hole structure 232, third through-hole structure 233, the second syndeton 242 and fourth hole structure 234 are by dielectric 270 insulation gaps.Better, the material of described dielectric 270 has the dielectric constant less than or equal to 4.0, wherein, described dielectric material can be one or more the combination in the silica of silicon dioxide, silicon nitride, silicon oxynitride or carbon dope, but is not limited to above-mentioned different materials.
In the present embodiment, described first lead-in wire the 221, second lead-in wire 222 and describedly treat that geodesic structure 210 is all on same interconnection layer, but can also be described first lead-in wire the 221 and second lead-in wire 222 on the described upper layer interconnects layer for the treatment of geodesic structure 210, and described first lead-in wire the 221 and second lead-in wire 222 can on different interconnection layers, specifically not limit.
Better, the first syndeton 241 and second syndeton 242 of the described conductive structure of every one deck are positioned at same layer, to assess exactly the described electromigration for the treatment of geodesic structure 210, but being positioned at different interconnection layers, the first syndeton 241 of the described conductive structure of every one deck and the second syndeton 242 also can realize conducting to electric current, also within thought range of the present invention.
The present invention is not limited to above embodiment, the electromigratory test structure that interconnects as described can also be three layers of the conductive structure A that stacks gradually from top to bottom, conductive structure B and conductive structure C composition, or more multi-layered conductive structure, the number of plies of conductive structure is not done concrete restriction, the number of plies of conductive structure is more, current density on the described conductive structure of every one deck is just lower, more is not easy to occur the cavity of causing because of electromigration.
as shown in Figure 4, in the electromigratory test structure of the interconnection of another embodiment of the present invention, the electromigratory test structure 200 of described interconnection comprises treats geodesic structure 210, pin configuration and the two-layer conductive structure A that stacks gradually from top to bottom, conductive structure B and conductive structure C form, wherein, and described pin configuration, conductive structure A, conductive structure B and conductive structure C are used to and describedly treat that geodesic structure 210 provides electric current, and described pin configuration comprises first lead-in wire the 221 and second lead-in wire 222, conductive structure A, conductive structure B and conductive structure C are positioned at the described lower floor that treats geodesic structure 200 and described pin configuration, and ground floor conductive structure A comprises ground floor the first through-hole structure A231, ground floor the first syndeton A241, ground floor the second through-hole structure A232, ground floor third through-hole structure A233, ground floor the second syndeton A242 and ground floor fourth hole structure A234, second layer conductive structure B comprises the second layer the first through-hole structure B231, the second layer the first syndeton B241, the second layer the second through-hole structure B232, second layer third through-hole structure B233, the second layer the second syndeton B242 and second layer fourth hole structure B234, the 3rd layer of conductive structure C comprises the 3rd layer of first through-hole structure C231, the 3rd layer of first syndeton C241, the 3rd layer of second through-hole structure C232, the 3rd layer of third through-hole structure C 233, the 3rd layer of second syndeton C242 and the 3rd layer of fourth hole structure C 234.Shared the electric current of described ground floor the first syndeton A241 due to the second layer the first syndeton B241 and the 3rd layer of first syndeton C241, the second layer the second syndeton B242 and the 3rd layer of second syndeton C242 have shared the electric current of described ground floor the second syndeton A242, avoid electromigratory cavity to be created on described the first syndeton A241 or described the second syndeton A242, also can the described electromigration for the treatment of geodesic structure 210 of accurate evaluation, thereby the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance, also within thought range of the present invention.
And, in the present invention, conductive structure A is not limited to said structure, as can also as described in the other end of ground floor the first syndeton A241 be connected the end of syndeton A242 with ground floor and can also connect respectively a voltage tester end, this is the common technology means of this area, and therefore not to repeat here.
in sum, the invention provides the electromigratory test structure of a kind of interconnection, the electromigratory test structure of this interconnection comprises: treat geodesic structure, the conductive structure that pin configuration and n layer stack gradually from top to bottom, described conductive structure is positioned at the described lower floor that treats geodesic structure and described pin configuration, the described conductive structure of every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, the third through-hole structure, the second syndeton and fourth hole structure, described pin configuration and conductive structure are used to describedly treats that geodesic structure provides electric current, the described conductive structure of multilayer has been shared the current density of the described conductive structure of every one deck.Compared with prior art, the electromigratory test structure of interconnection provided by the invention has the following advantages:
1, the electromigratory test structure of interconnection provided by the invention comprises treats geodesic structure, the conductive structure that pin configuration and n layer stack gradually from top to bottom, compared with prior art, described conductive structure is positioned at the described lower floor that treats geodesic structure and described pin configuration, the described conductive structure of every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, the third through-hole structure, the second syndeton and fourth hole structure, described pin configuration and conductive structure are used to describedly treats that geodesic structure provides electric current, the described conductive structure of multilayer has been shared the current density of the described conductive structure of every one deck, avoid electromigratory cavity to be created on described the first syndeton or described the second syndeton, the energy accurate evaluation is treated the electromigration of geodesic structure, thereby the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance.
2, described ground floor second through-hole structure of the electromigratory test structure of interconnection provided by the invention and described ground floor third through-hole structure are a through hole, with the interconnection structure of simulating reality truly, thereby guarantee to treat the accuracy that the electromigration of geodesic structure is analyzed.
3, described ground floor first through-hole structure of the electromigratory test structure of interconnection provided by the invention, described ground floor fourth hole structure, m layer the first through-hole structure, m layer the second through-hole structure, m layer third through-hole structure, m layer fourth hole structure is the through hole that is arranged side by side more than two, to reduce the current density on each through hole, avoid described ground floor the first through-hole structure, described ground floor fourth hole structure, m layer the first through-hole structure, m layer the second through-hole structure, m layer third through-hole structure, m layer fourth hole structure produces the cavity because of electromigration, thereby the accuracy that the electromigration of geodesic structure is analyzed is treated in assurance.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of claim of the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (13)
1. the electromigratory test structure of interconnection, is characterized in that, comprising:
Treat geodesic structure;
Pin configuration comprises the first lead-in wire and the second lead-in wire;
The conductive structure that the n layer stacks gradually from top to bottom, be positioned at the described lower floor that treats geodesic structure and described pin configuration, the described conductive structure of every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure, wherein, n is the integer more than or equal to 2, and described pin configuration and conductive structure are used to describedly treats that geodesic structure provides electric current; And
Dielectric, described treat geodesic structure, first the lead-in wire, second the lead-in wire, every one deck the first through-hole structure, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure by described dielectric insulation interval.
2. the electromigratory test structure of interconnection as claimed in claim 1, it is characterized in that, described the first lead-in wire is connected with an end of ground floor the first syndeton by ground floor the first through-hole structure, the other end of described ground floor the first syndeton treats that with described an end of geodesic structure is connected by ground floor the second through-hole structure, the described other end for the treatment of geodesic structure is connected with an end of ground floor the second syndeton by ground floor third through-hole structure, and the other end of described ground floor the second syndeton passes through ground floor fourth hole structure structure and described second and goes between and be connected, one end of described m-1 layer the first syndeton is connected with an end of m layer the first syndeton by m layer the first through-hole structure, the other end of described m layer the first syndeton is connected with the other end of described m-1 layer the first syndeton by m layer the second through-hole structure, the other end of described m-1 layer the second syndeton is connected with an end of m layer the second syndeton by m layer third through-hole structure, the other end of described m layer the second syndeton is connected with an end of described m-1 layer the first syndeton by m layer fourth hole structure structure, wherein, 2≤m≤n.
3. the electromigratory test structure of interconnection as claimed in claim 1 or 2, is characterized in that, described ground floor the second through-hole structure and described ground floor third through-hole structure are a through hole.
4. the electromigratory test structure of interconnection as claimed in claim 1 or 2, it is characterized in that, described ground floor the first through-hole structure, described ground floor fourth hole structure, m layer the first through-hole structure, m layer the second through-hole structure, m layer third through-hole structure, m layer fourth hole structure are the through hole that is arranged side by side more than two.
5. the electromigratory test structure of interconnection as claimed in claim 1, is characterized in that, describedly treats that geodesic structure and described pin configuration are positioned at same layer.
6. the electromigratory test structure of interconnection as claimed in claim 1, is characterized in that, described the first lead-in wire and the second lead-in wire are bulk.
7. the electromigratory test structure of interconnection as claimed in claim 6, is characterized in that, the width of described the first lead-in wire is more than or equal to the described width for the treatment of geodesic structure, and the width of described the second lead-in wire is more than or equal to the described width for the treatment of geodesic structure.
8. the electromigratory test structure of interconnection as claimed in claim 1, is characterized in that, the first syndeton and second syndeton of the described conductive structure of every one deck are positioned at same layer.
9. the electromigratory test structure of interconnection as claimed in claim 1, is characterized in that, described the first syndeton and the second syndeton are bar shaped.
10. the electromigratory test structure of interconnection as claimed in claim 9, is characterized in that, the width of described the first syndeton is more than or equal to the described width for the treatment of geodesic structure, and the width of described the second syndeton is more than or equal to the described width for the treatment of geodesic structure.
11. the electromigratory test structure of interconnection as claimed in claim 1 is characterized in that, describedly treats that the material of geodesic structure is metal, the material of described pin configuration is metal, and the material of conductive structure is metal.
12. the electromigratory test structure of interconnection as claimed in claim 1 is characterized in that, described dielectric material has the dielectric constant less than or equal to 4.0.
13. the electromigratory test structure of interconnection as claimed in claim 12 is characterized in that, the combination of one or more in the silica that described dielectric material is silicon dioxide, silicon nitride, silicon oxynitride or carbon dope.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103887282A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Metal electromigration structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103346143A (en) * | 2013-07-03 | 2013-10-09 | 上海华力微电子有限公司 | Test structure for metal layer electromigration |
| CN103346143B (en) * | 2013-07-03 | 2015-11-25 | 上海华力微电子有限公司 | The electromigratory test structure of a kind of metal level |
| CN104425293A (en) * | 2013-08-26 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Test structure for monitoring open circuit situation of SRAM through hole, and formation method thereof |
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| CN104576613B (en) * | 2013-10-29 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | Electro-migration testing method and structure |
| CN103887282A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Metal electromigration structure |
| CN103887282B (en) * | 2014-03-20 | 2016-08-17 | 上海华力微电子有限公司 | A kind of metal electro-migration structure |
| CN108091636A (en) * | 2017-12-15 | 2018-05-29 | 上海华力微电子有限公司 | Top-level metallic line electro-migration testing structure |
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