CN103094255B - Interconnect electromigratory test structure - Google Patents
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- CN103094255B CN103094255B CN201310062231.0A CN201310062231A CN103094255B CN 103094255 B CN103094255 B CN 103094255B CN 201310062231 A CN201310062231 A CN 201310062231A CN 103094255 B CN103094255 B CN 103094255B
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Abstract
The invention provides the electromigratory test structure of a kind of interconnection, the electromigratory test structure of described interconnection comprises: treat geodesic structure; Pin configuration, comprises the first lead-in wire and the second lead-in wire; The conductive structure that n layer stacks gradually from top to bottom, the lower floor of geodesic structure and described pin configuration is treated described in being positioned at, conductive structure described in every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure, wherein, n be more than or equal to 2 positive integer; Dielectric, described in treat that first through-hole structure of geodesic structure, the first lead-in wire, the second lead-in wire, every one deck, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure are by described dielectric insulation interval.At the electromigratory test structure of interconnection provided by the invention, energy accurate evaluation treats the electromigration of geodesic structure, thus ensures the accuracy treating the electromigration analysis of geodesic structure.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly one interconnects electromigratory test structure.
Background technology
Electromigration (electromigration, be called for short EM) be a kind of material (material) transfer phenomena caused due to progressively moving of conductor Atom, its inherent mechanism is momentum (momentum) transfer between conduction electrons and the metallic atom of diffusion.For the occasion that there is high DC current density (high directcurrentdensities), such as, in microelectronic, electromigration effect is very crucial.When electromigration occurs, the part momentum of a moving electron transfers to contiguous activated atom, and this can cause this atom to leave its home position.Along with passage of time, this strength can cause the home position of atom away from them of vast number.Electromigration can cause occurring in conductor (especially narrow wire) that fracture (break) or breach (gap) stop electric current to occur, this fracture or breach are called as cavity (void) or internal failure (internalfailure), namely open a way.Electromigration also can cause the atom packing in a conductor (pile up) and form unexpected electrical connection to proximity conductor drift (drift), this defect is called as hillock and lost efficacy (hillockfailure) or whisker inefficacy (whisker failure), i.e. short circuit.Above-mentioned two class defects all can cause fault.
Usually, the deelectric transferred ability of device is assessed by testing certain test structure.In the prior art, interconnect electromigratory test structure as shown in Figure 1, and the electromigratory test structure 100 of described interconnection comprises treats geodesic structure 110, first lead-in wire 121, second lead-in wire 122 and the first through-hole structure 131, first syndeton 141, second through-hole structure 132, third through-hole structure 133, second syndeton 142 and fourth hole structure 134.In FIG, voltage is applied respectively on the first lead-in wire 121 and the second lead-in wire 122, make electric current flow through the first syndeton 141 and the second through-hole structure 132 by the first through-hole structure 131 to flow to and treat geodesic structure 110, electric current is from treating that one end of geodesic structure 110 flow to the other end, by third through-hole structure 133, second syndeton 142 and fourth hole structure 134, flow to the second lead-in wire 122, thus measure the electromigration treating geodesic structure 110, such as, in Fig. 1 a region.
But, because the characteristic size of integrated circuit is more and more less, time particularly to below 45nm, the thickness of lower interconnection is more and more thinner, the gap of the thickness of the thickness that interconnection interconnects at the middle and upper levels and lower interconnection is increasing, and make the electromigratory test structure of interconnection of the prior art cannot measure the electromigration treating geodesic structure 110 really, as shown in Figure 1, in the electromigratory test structure of interconnection in the prior art, cavity produces the lower interconnection line in syndeton and through-hole structure contact position, such as, because the cross-sectional area of described third through-hole structure 133 is limited, so the current density near described second syndeton 142 place of described third through-hole structure 133 is larger, cavity produces in described second syndeton 142 near the b region of described third through-hole structure 133, as shown in Figure 1, and the electromigration treating geodesic structure 110 cannot be measured accurately.
Therefore, how to provide a kind of interconnection electromigratory test structure, energy accurate evaluation treats the electromigration of geodesic structure, thus ensures the accuracy treating the electromigration analysis of geodesic structure, has become the problem that those skilled in the art need to solve.
Summary of the invention
The object of the present invention is to provide the electromigratory test structure of a kind of interconnection, energy accurate evaluation treats the electromigration of geodesic structure, thus ensures the accuracy treating the electromigration analysis of geodesic structure.
For solving the problems of the technologies described above, the invention provides the electromigratory test structure of a kind of interconnection, the electromigratory test structure of described interconnection comprises:
Treat geodesic structure;
Pin configuration, comprises the first lead-in wire and the second lead-in wire;
The conductive structure that n layer stacks gradually from top to bottom, the lower floor of geodesic structure and described pin configuration is treated described in being positioned at, conductive structure described in every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure, wherein, n be more than or equal to 2 positive integer, described pin configuration and conductive structure are used for treating that geodesic structure provides electric current for described; And
Dielectric, described in treat that first through-hole structure of geodesic structure, the first lead-in wire, the second lead-in wire, every one deck, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure are by described dielectric insulation interval.
Preferably, described first lead-in wire is connected by ground floor first through-hole structure one end with ground floor first syndeton, with described, the other end of described ground floor first syndeton treats that one end of geodesic structure is connected by ground floor second through-hole structure, describedly treat that the other end of geodesic structure is connected by ground floor third through-hole structure one end with ground floor second syndeton, the other end of described ground floor second syndeton is gone between by ground floor fourth hole structure structure and described second and is connected, one end of m-1 layer first syndeton is connected with one end of m layer first syndeton by m layer first through-hole structure, the other end of described m layer first syndeton is connected with the other end of described m-1 layer first syndeton by m layer second through-hole structure, one end of described m-1 layer second syndeton is connected with one end of m layer second syndeton by m layer third through-hole structure, the other end of described m layer second syndeton is connected with the other end of described m-1 layer second syndeton by m layer fourth hole structure, wherein, 2≤m≤n.
Preferably, described ground floor second through-hole structure and described ground floor third through-hole structure are a through hole.
Preferably, described ground floor first through-hole structure, described ground floor fourth hole structure, m layer first through-hole structure, m layer second through-hole structure, m layer third through-hole structure, m layer fourth hole structure are the through hole that two or more is arranged side by side.
Preferably, treat described in that geodesic structure and described pin configuration are positioned at same layer.
Preferably, described first lead-in wire and the second lead-in wire are bulk.
Preferably, described in the described first width gone between is more than or equal to, treat the width of geodesic structure, described in the described second width gone between is more than or equal to, treat the width of geodesic structure.
Preferably, the first syndeton of conductive structure described in every one deck and the second syndeton are positioned at same layer.
Preferably, described first syndeton and the second syndeton are bar shaped.
Preferably, described in the width of described first syndeton is more than or equal to, treat the width of geodesic structure, described in the width of described second syndeton is more than or equal to, treat the width of geodesic structure.
Preferably, described in treat that the material of geodesic structure is metal, the material of described pin configuration is metal, and the material of conductive structure is metal.
Preferably, described dielectric material has the dielectric constant being less than or equal to 4.0.
Preferably, described dielectric material is the combination of one or more in the silica of silicon dioxide, silicon nitride, silicon oxynitride or carbon dope.
Compared with prior art, the electromigratory test structure of interconnection provided by the invention has the following advantages:
1, the electromigratory test structure of interconnection provided by the invention comprises treats geodesic structure, the conductive structure that pin configuration and n layer stack gradually from top to bottom, compared with prior art, the lower floor of geodesic structure and described pin configuration is treated described in described conductive structure is positioned at, described in every one deck, conductive structure comprises the first through-hole structure, first syndeton, second through-hole structure, third through-hole structure, second syndeton and fourth hole structure, described pin configuration and conductive structure are used for treating that geodesic structure provides electric current for described, the described conductive structure of multilayer has shared the current density of conductive structure described in every one deck, electromigratory cavity is avoided to produce in described first syndeton or described second syndeton, energy accurate evaluation treats the electromigration of geodesic structure, thus ensure the accuracy treating the electromigration analysis of geodesic structure.
2, described ground floor second through-hole structure of the electromigratory test structure of interconnection provided by the invention and described ground floor third through-hole structure are a through hole, with the interconnection structure of simulating reality truly, thus ensure the accuracy treating the electromigration analysis of geodesic structure.
3, described ground floor first through-hole structure of the electromigratory test structure of interconnection provided by the invention, described ground floor fourth hole structure, m layer first through-hole structure, m layer second through-hole structure, m layer third through-hole structure, m layer fourth hole structure is the through hole that two or more is arranged side by side, to reduce the current density on each through hole, avoid described ground floor first through-hole structure, described ground floor fourth hole structure, m layer first through-hole structure, m layer second through-hole structure, m layer third through-hole structure, m layer fourth hole structure produces cavity because of electromigration, thus ensure the accuracy treating the electromigration analysis of geodesic structure.
Accompanying drawing explanation
Fig. 1 is the profile of the electromigratory test structure of interconnection of the prior art;
Fig. 2 is the profile of the electromigratory test structure of interconnection of one embodiment of the invention;
Fig. 3 is the current lead-through schematic diagram of the electromigratory test structure of interconnection of one embodiment of the invention;
Fig. 4 is the profile of the electromigratory test structure of interconnection of another embodiment of the present invention.
Embodiment
Be described in more detail below in conjunction with the manufacture method of schematic diagram to the electromigratory test structure of interconnection of the present invention, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is to provide a kind of interconnection electromigratory test structure, the electromigratory test structure of this interconnection comprises: treat geodesic structure, the conductive structure that pin configuration and n layer stack gradually from top to bottom, the lower floor of geodesic structure and described pin configuration is treated described in described conductive structure is positioned at, described in every one deck, conductive structure comprises the first through-hole structure, first syndeton, second through-hole structure, third through-hole structure, second syndeton and fourth hole structure, described pin configuration and conductive structure are used for treating that geodesic structure provides electric current for described, the described conductive structure of multilayer has shared the current density of conductive structure described in every one deck.
Illustrate the electromigratory test structure 200 of interconnection of the present embodiment below in conjunction with Fig. 2, wherein, Fig. 2 is the profile of the electromigratory test structure of interconnection of one embodiment of the invention.
In the present embodiment, the electromigratory test structure 200 of described interconnection comprises treats geodesic structure 210, pin configuration and the two-layer conductive structure A that stacks gradually from top to bottom and conductive structure B form, wherein, described pin configuration, conductive structure A and conductive structure B is used for treating that geodesic structure 210 provides electric current for described, described pin configuration comprises the first lead-in wire 221 and the second lead-in wire 222, the lower floor of geodesic structure 200 and described pin configuration is treated described in conductive structure A and conductive structure B is positioned at, conductive structure described in every one deck includes the first through-hole structure 231, first syndeton 241, second through-hole structure 232, third through-hole structure 233, second syndeton 242 and fourth hole structure 234.
Described shape, length and the width treating geodesic structure 210 is not particularly limited, different according to the minimum design dimension of different processing procedure, but conveniently the electromigration of geodesic structure 210 is treated in test, treats that geodesic structure 210 is for strip described in general.
The shape of described first lead-in wire 221 and the second lead-in wire 222 does not do concrete restriction, can be bar shaped, circle or irregular figure, but conveniently technique preparation, in the present embodiment, described first lead-in wire 221 and the second lead-in wire 222 are bulk.Further, preferably, described in the width of described first lead-in wire 221 is more than or equal to, treat the width of geodesic structure 210, described in the width of described second lead-in wire 222 is more than or equal to, treat the width of geodesic structure 210.When the width of described first lead-in wire 221 and the second lead-in wire 222 is greater than the width until geodesic structure 210, the first lead-in wire 221 and the second lead-in wire 222 described in when applying voltage can be avoided to produce cavity, the time of energy extended testing system.
Described first syndeton 241 and the second syndeton 242 are for treating geodesic structure 210 On current to described.Wherein, the shape of described first syndeton 241 and the second syndeton 242 does not do concrete restriction, can be bar shaped, circle or irregular figure, but conveniently technique preparation, in the present embodiment, described first syndeton 241 and the second syndeton 242 are bar shaped.Preferably, described in the width of described first syndeton 241 is more than or equal to, treat the width of geodesic structure 210, described in the width of described second syndeton 242 is more than or equal to, treat the width of geodesic structure 210.When the width of described first syndeton 241 and the second syndeton 242 is greater than the width until geodesic structure 210, the first syndeton 241 and the second syndeton 242 described in when applying voltage can be avoided to produce cavity, the time of energy extended testing system.
First through-hole structure 231, second through-hole structure 232, third through-hole structure 233 and fourth hole structure 234 are for treating geodesic structure 210 On current to described.Described ground floor second through-hole structure A232 and described ground floor third through-hole structure A233 is a through hole, with the interconnection structure of simulating reality truly, thus ensures the accuracy treating the electromigration analysis of geodesic structure.Other through-hole structure, i.e. described ground floor first through-hole structure A231, described ground floor fourth hole structure A234, the second layer first through-hole structure B231, the second layer second through-hole structure B232, the through hole that second layer third through-hole structure B233 and second layer fourth hole structure B234 all can be arranged side by side for two or more, to reduce the current density on each through hole, avoid described ground floor first through-hole structure A231, described ground floor fourth hole structure A234, the second layer first through-hole structure B231, the second layer second through-hole structure B232, second layer third through-hole structure B233 and second layer fourth hole structure B234 produces cavity because of electromigration, thus ensure the accuracy treating the electromigration analysis of geodesic structure.The shape of the cross-sectional area of through hole does not limit, and is generally circular or square.
Preferably, in the present embodiment, described first lead-in wire 221 is connected with one end of ground floor first syndeton A241 by ground floor first through-hole structure A231, with described, the other end of described ground floor first syndeton A241 treats that one end of geodesic structure 210 is connected by ground floor second through-hole structure A232, describedly treat that the other end of geodesic structure 210 is connected with one end of ground floor second syndeton A242 by ground floor third through-hole structure A233, the other end of described ground floor second syndeton A242 is gone between by ground floor fourth hole structure structure 234 and described second and 222 to be connected.One end of described ground floor first syndeton A241 is connected with one end of the second layer first syndeton B241 by the second layer first through-hole structure B231, the other end of the described second layer first syndeton B241 is connected with the other end of described ground floor first syndeton A241 by the second layer second through-hole structure B232, the other end of described ground floor second syndeton A242 is connected with one end of the second layer second syndeton B242 by second layer third through-hole structure B233, the other end of the described second layer second syndeton B242 is connected with one end of described ground floor first syndeton A242 by second layer fourth hole structure structure B234.
When applying positive voltage on described first lead-in wire 221, when the second lead-in wire 222 applies negative voltage, one end of geodesic structure 210 is treated described in electric current flows to after flowing through described ground floor first syndeton A241 and the second layer first syndeton B241 respectively, and described in flowing to, treat to described, the other end of geodesic structure 210 is to treat that geodesic structure 210 is tested, then, by the described other end treating geodesic structure 210, described second lead-in wire 222 is flow to, as shown in Figure 3 after flowing through described ground floor second syndeton A242 and the second layer second syndeton B242 respectively.Because the second layer first syndeton B241 and the second layer second syndeton B242 has shared the electric current of described ground floor first syndeton A241 and described ground floor second syndeton A242 respectively, electromigratory cavity is avoided to produce on described first syndeton A241 or described second syndeton A242, treat the electromigration of geodesic structure 210 described in energy accurate evaluation, thus ensure the accuracy treating the electromigration analysis of geodesic structure.It should be noted that, be not limited to apply positive voltage on described first lead-in wire 221, apply negative voltage at the second lead-in wire 222, can also apply negative voltage on described first lead-in wire 221, apply positive voltage at the second lead-in wire 222, then the sense of current is contrary.
The described material treating geodesic structure 210, pin configuration and conductive structure can be metal or alloy, as metallic copper, metallic aluminium or albronze, general, describedly treat that geodesic structure 210, pin configuration are identical with the material of conductive structure, but also can be different, as as described in treat that the material of geodesic structure 210 is metallic copper, the material of described pin configuration and conductive structure is metallic aluminium.
Describedly treat that geodesic structure 210, first goes between the 221, second lead-in wire 222, first through-hole structure 231, first syndeton 241, second through-hole structure 232 of every one deck, third through-hole structure 233, second syndeton 242 and fourth hole structure 234 by dielectric 270 insulation gap.Preferably, the material of described dielectric 270 has the dielectric constant being less than or equal to 4.0, wherein, described dielectric material can be the combination of one or more in the silica of silicon dioxide, silicon nitride, silicon oxynitride or carbon dope, but is not limited to above-mentioned different materials.
In the present embodiment, described first lead-in wire 221, second lead-in wire 222 and describedly treat geodesic structure 210 all on same interconnection layer, but can also described first lead-in wire 221 and the second lead-in wire 222 treat on the upper layer interconnects layer of geodesic structure 210 described, and described first lead-in wire 221 and the second lead-in wire 222 on different interconnection layers, specifically can not limit.
Preferably, first syndeton 241 of conductive structure described in every one deck and the second syndeton 242 are positioned at same layer, to treat the electromigration of geodesic structure 210 described in assessing exactly, but the first syndeton 241 of conductive structure described in every one deck and the second syndeton 242 are positioned at the conducting that different interconnection layers also can realize electric current, also within thought range of the present invention.
The present invention is not limited to above embodiment, as as described in the electromigratory test structure of interconnection can also be that three layers of the conductive structure A stacked gradually from top to bottom, conductive structure B and conductive structure C form, or more the conductive structure of layer, the number of plies of conductive structure does not do concrete restriction, the number of plies of conductive structure is more, current density on conductive structure described in every one deck is lower, is more not easy the cavity occurring causing because of electromigration.
As shown in Figure 4, in the electromigratory test structure of the interconnection of another embodiment of the present invention, the electromigratory test structure 200 of described interconnection comprises treats geodesic structure 210, pin configuration and the two-layer conductive structure A stacked gradually from top to bottom, conductive structure B and conductive structure C forms, wherein, and described pin configuration, conductive structure A, conductive structure B and conductive structure C is used for treating that geodesic structure 210 provides electric current for described, and described pin configuration comprises the first lead-in wire 221 and the second lead-in wire 222, conductive structure A, treat the lower floor of geodesic structure 200 and described pin configuration described in conductive structure B and conductive structure C is positioned at, ground floor conductive structure A comprises ground floor first through-hole structure A231, ground floor first syndeton A241, ground floor second through-hole structure A232, ground floor third through-hole structure A233, ground floor second syndeton A242 and ground floor fourth hole structure A234, second layer conductive structure B comprise the second layer first through-hole structure B231, the second layer first syndeton B241, the second layer second through-hole structure B232, second layer third through-hole structure B233, the second layer second syndeton B242 and second layer fourth hole structure B234, third layer conductive structure C comprise third layer first through-hole structure C231, third layer first syndeton C241, third layer second through-hole structure C232, third layer third through-hole structure C 233, third layer second syndeton C242 and third layer fourth hole structure C 234.Because the second layer first syndeton B241 and third layer first syndeton C241 has shared the electric current of described ground floor first syndeton A241, the second layer second syndeton B242 and third layer second syndeton C242 has shared the electric current of described ground floor second syndeton A242, electromigratory cavity is avoided to produce on described first syndeton A241 or described second syndeton A242, also the electromigration of geodesic structure 210 can be treated described in accurate evaluation, thus ensure the accuracy treating the electromigration analysis of geodesic structure, also within thought range of the present invention.
And, in the present invention, conductive structure A is not limited to said structure, as can also as described in the other end of ground floor first syndeton A241 can also be connected a voltage tester end respectively with one end of ground floor second syndeton A242, this is the common technology means of this area, and therefore not to repeat here.
In sum, the invention provides the electromigratory test structure of a kind of interconnection, the electromigratory test structure of this interconnection comprises: treat geodesic structure, the conductive structure that pin configuration and n layer stack gradually from top to bottom, the lower floor of geodesic structure and described pin configuration is treated described in described conductive structure is positioned at, described in every one deck, conductive structure comprises the first through-hole structure, first syndeton, second through-hole structure, third through-hole structure, second syndeton and fourth hole structure, described pin configuration and conductive structure are used for treating that geodesic structure provides electric current for described, the described conductive structure of multilayer has shared the current density of conductive structure described in every one deck.Compared with prior art, the electromigratory test structure of interconnection provided by the invention has the following advantages:
1, the electromigratory test structure of interconnection provided by the invention comprises treats geodesic structure, the conductive structure that pin configuration and n layer stack gradually from top to bottom, compared with prior art, the lower floor of geodesic structure and described pin configuration is treated described in described conductive structure is positioned at, described in every one deck, conductive structure comprises the first through-hole structure, first syndeton, second through-hole structure, third through-hole structure, second syndeton and fourth hole structure, described pin configuration and conductive structure are used for treating that geodesic structure provides electric current for described, the described conductive structure of multilayer has shared the current density of conductive structure described in every one deck, electromigratory cavity is avoided to produce in described first syndeton or described second syndeton, energy accurate evaluation treats the electromigration of geodesic structure, thus ensure the accuracy treating the electromigration analysis of geodesic structure.
2, described ground floor second through-hole structure of the electromigratory test structure of interconnection provided by the invention and described ground floor third through-hole structure are a through hole, with the interconnection structure of simulating reality truly, thus ensure the accuracy treating the electromigration analysis of geodesic structure.
3, described ground floor first through-hole structure of the electromigratory test structure of interconnection provided by the invention, described ground floor fourth hole structure, m layer first through-hole structure, m layer second through-hole structure, m layer third through-hole structure, m layer fourth hole structure is the through hole that two or more is arranged side by side, to reduce the current density on each through hole, avoid described ground floor first through-hole structure, described ground floor fourth hole structure, m layer first through-hole structure, m layer second through-hole structure, m layer third through-hole structure, m layer fourth hole structure produces cavity because of electromigration, thus ensure the accuracy treating the electromigration analysis of geodesic structure.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (13)
1. interconnect an electromigratory test structure, it is characterized in that, comprising:
Treat geodesic structure;
Pin configuration, comprises the first lead-in wire and the second lead-in wire;
The conductive structure that n layer stacks gradually from top to bottom, the lower floor of geodesic structure and described pin configuration is treated described in being positioned at, conductive structure described in every one deck comprises the first through-hole structure, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure, wherein, n be more than or equal to 2 integer, described pin configuration and conductive structure are used for treating that geodesic structure provides electric current for described; And
Dielectric, described in treat that first through-hole structure of geodesic structure, the first lead-in wire, the second lead-in wire, every one deck, the first syndeton, the second through-hole structure, third through-hole structure, the second syndeton and fourth hole structure are by described dielectric insulation interval.
2. the electromigratory test structure of interconnection as claimed in claim 1, it is characterized in that, described first lead-in wire is connected by ground floor first through-hole structure one end with ground floor first syndeton, with described, the other end of described ground floor first syndeton treats that one end of geodesic structure is connected by ground floor second through-hole structure, describedly treat that the other end of geodesic structure is connected by ground floor third through-hole structure one end with ground floor second syndeton, the other end of described ground floor second syndeton is gone between by ground floor fourth hole structure structure and described second and is connected, one end of m-1 layer first syndeton is connected with one end of m layer first syndeton by m layer first through-hole structure, the other end of described m layer first syndeton is connected with the other end of described m-1 layer first syndeton by m layer second through-hole structure, one end of described m-1 layer second syndeton is connected with one end of m layer second syndeton by m layer third through-hole structure, the other end of described m layer second syndeton is connected with the other end of described m-1 layer second syndeton by m layer fourth hole structure, wherein, 2≤m≤n.
3. the electromigratory test structure of interconnection as claimed in claim 2, it is characterized in that, described ground floor second through-hole structure and described ground floor third through-hole structure are a through hole.
4. the electromigratory test structure of interconnection as claimed in claim 2, it is characterized in that, described ground floor first through-hole structure, described ground floor fourth hole structure, m layer first through-hole structure, m layer second through-hole structure, m layer third through-hole structure, m layer fourth hole structure are the through hole that two or more is arranged side by side.
5. the electromigratory test structure of interconnection as claimed in claim 1, is characterized in that, described in treat that geodesic structure and described pin configuration are positioned at same layer.
6. the electromigratory test structure of interconnection as claimed in claim 1, is characterized in that, described first lead-in wire and the second lead-in wire are bulk.
7. the electromigratory test structure of interconnection as claimed in claim 6, is characterized in that, treats the width of geodesic structure described in the described first width gone between is more than or equal to, and treats the width of geodesic structure described in the described second width gone between is more than or equal to.
8. the electromigratory test structure of interconnection as claimed in claim 1, it is characterized in that, the first syndeton and second syndeton of conductive structure described in every one deck are positioned at same layer.
9. the electromigratory test structure of interconnection as claimed in claim 1, it is characterized in that, described first syndeton and the second syndeton are bar shaped.
10. the electromigratory test structure of interconnection as claimed in claim 9, is characterized in that, treats the width of geodesic structure described in the width of described first syndeton is more than or equal to, and treats the width of geodesic structure described in the width of described second syndeton is more than or equal to.
11. as claimed in claim 1 electromigratory test structures of interconnection, is characterized in that, described in treat that the material of geodesic structure is metal, the material of described pin configuration is metal, and the material of conductive structure is metal.
The electromigratory test structure of 12. interconnection as claimed in claim 1, it is characterized in that, described dielectric material has the dielectric constant being less than or equal to 4.0.
The electromigratory test structure of 13. interconnection as claimed in claim 12, it is characterized in that, described dielectric material is the combination of one or more in the silica of silicon dioxide, silicon nitride, silicon oxynitride or carbon dope.
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| CN103346143B (en) * | 2013-07-03 | 2015-11-25 | 上海华力微电子有限公司 | The electromigratory test structure of a kind of metal level |
| CN104425293B (en) * | 2013-08-26 | 2017-05-17 | 中芯国际集成电路制造(上海)有限公司 | Test structure for monitoring open circuit situation of SRAM through hole, and formation method thereof |
| CN104576613B (en) * | 2013-10-29 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | Electro-migration testing method and structure |
| CN103887282B (en) * | 2014-03-20 | 2016-08-17 | 上海华力微电子有限公司 | A kind of metal electro-migration structure |
| CN108091636A (en) * | 2017-12-15 | 2018-05-29 | 上海华力微电子有限公司 | Top-level metallic line electro-migration testing structure |
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| US6822437B1 (en) * | 2003-02-10 | 2004-11-23 | Advanced Micro Devices, Inc. | Interconnect test structure with slotted feeder lines to prevent stress-induced voids |
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| US6762597B1 (en) * | 2002-10-30 | 2004-07-13 | Advanced Micro Devices, Inc. | Structure, system, and method for assessing electromigration permeability of layer material within interconnect |
| US6822437B1 (en) * | 2003-02-10 | 2004-11-23 | Advanced Micro Devices, Inc. | Interconnect test structure with slotted feeder lines to prevent stress-induced voids |
| CN102339815A (en) * | 2010-07-15 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | Test structure for analyzing through-hole type metal-interconnected electromigration reliability |
| CN102446900A (en) * | 2010-10-12 | 2012-05-09 | 上海华虹Nec电子有限公司 | Electromigration reliability test structure and making method for multilayer of metal interconnected metal wires |
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