CN205376473U - Electromigration test structure - Google Patents
Electromigration test structure Download PDFInfo
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- CN205376473U CN205376473U CN201620065682.9U CN201620065682U CN205376473U CN 205376473 U CN205376473 U CN 205376473U CN 201620065682 U CN201620065682 U CN 201620065682U CN 205376473 U CN205376473 U CN 205376473U
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Abstract
The utility model provides an electromigration test structure, include: be located the metal wire of the first metal layer, the both ends of metal wire are connected to the second metal level through first through -hole and second through -hole respectively, first through -hole reaches the both ends of second through -hole respectively the link bit in the first metal layer reaches test terminal in the second metal level. The utility model discloses an electromigration test structure can not occupy the valuable area on the wafer more, can not increase the cost of manufacture of test structure yet, has improved the utilization ratio of wafer, has reduced test cost, effectively guarantees the quality and the reliability of semiconductor junction structure, has improved semiconductor device's yields greatly, in addition, still provides heat dissipation channel, has improved the accuracy of test.
Description
Technical field
This utility model relates to field of semiconductor device test, particularly relates to a kind of electro-migration testing structure.
Background technology
Along with the continuous expansion of physical dimension, electric current density sharply increases in circuit interconnects, and the topmost integrity problem brought is exactly electromigration.
Electromigration (ElectroMigration, EM) is one of big event of quasiconductor aluminum bronze making technology back segment reliability assessment, the momentum between conduction electrons and the metallic atom of diffusion shift and cause.At a certain temperature, applying certain electric current in a metal, when electromigration occurs, the part momentum of a moving electron transfers to contiguous active ions, and this results in this ion and leaves home position.When electric current density is bigger, electronics under the driving of electrostatic field force from cathode to anode displacement form " electron wind " (ElectronWind), and then the atom home position away from them of vast number can be caused.As time goes on, electromigration can cause conductor, fracture or breach occurs and then stop the flowing of electronics in especially narrow wire, and this defect is referred to as cavity (Void) or internal failure, namely opens a way.Electromigration also results in the atom packing in conductor and to proximity conductor drift and then formation thrust (Hillock), produces unexpected electrical connection, i.e. short circuit.
In traditional test structure, electromigratory test object includes metal interconnecting wires, and along with the raising of technological level, electromigratory test object is also being continuously increased, including single through hole and stacking hole.Different tests test structure corresponding to object is diverse, is disconnected from each other, and owing to test structure can only be placed on the Cutting Road of wafer, its area taken is limited, and the quantity of the test structure that can place is severely limited.Therefore, the region that same test wafer can be prepared electro-migration testing structure is limited, and it is necessary for increasing multiple test structure with the reliability of thoroughly evaluating wafer as far as possible, and this is formed for a kind of contradiction.
In addition, along with the characteristic size of semiconductor device constantly reduces, the size of metal interconnecting wires and various through hole constantly reduces, thus causing that electric current density is continuously increased, the component failure caused by electromigration is more notable, various test objects is carried out electro-migration testing and is also just particularly important.
Therefore, how on limited Cutting Road region, the q&r realizing various electro-migration testing, and then ensureing semiconductor structure as much as possible, the yields improving semiconductor device has become one of those skilled in the art's problem demanding prompt solution.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is in that to provide a kind of electro-migration testing structure, few for solving the limited electro-migration testing structure brought in Cutting Road region in prior art, the problems such as reliability testing is not comprehensive.
For achieving the above object and other relevant purposes, this utility model provides a kind of electro-migration testing structure, and described electro-migration testing structure at least includes:
It is positioned at the metal wire of the first metal layer, the two ends of described metal wire are connected to the second metal level respectively through the first through hole and the second through hole, and the two ends of described first through hole and described second through hole connect the test lead being arranged in described the first metal layer and described second metal level respectively.
Preferably, also including the multiple through holes being sequentially connected between each metal level being arranged on described second metal level, form stacking hole respectively with described first through hole and described second through hole, the superiors' through hole connects the test lead being arranged in topmost metal layer.
It is highly preferred that described test lead includes voltage tester end and testing current end.
It is highly preferred that each test lead is arranged with described metal lines run parallel.
Preferably, the material of described first metal wire is Cu or Al.
Preferably, the width of described metal wire is not more than the minimum feature of wafer to be measured.
As it has been described above, electro-migration testing structure of the present utility model, have the advantages that
1, multiple electro-migration testing structure of the prior art is integrated by electro-migration testing structure of the present utility model, will not take the valuable area on wafer more, without the cost of manufacture increasing test structure.
2, electro-migration testing structure of the present utility model makes the kind testing structure in equal area increase, and improves the utilization rate of wafer；The kind increase simultaneously testing structure causes that the wafer number for testing reduces, and reduces testing cost.
3, the different object such as metal wire, single through hole, stacking hole can be carried out electro-migration testing by electro-migration testing structure of the present utility model, is effectively ensured the q&r of semiconductor structure, substantially increases the yields of semiconductor device.
4, electro-migration testing structure of the present utility model is when carrying out the electro-migration testing of a kind of object, and other parts being not passed through electric current as heat dissipation channel, can improve the accuracy of test.
Accompanying drawing explanation
Fig. 1 is shown as the schematic top plan view of electro-migration testing structure of the present utility model.
Fig. 2 is shown as the schematic side view of electro-migration testing structure of the present utility model.
Fig. 3 is shown as the principle schematic that metal interconnecting wires carries out electro-migration testing of electro-migration testing structure of the present utility model.
Fig. 4 is shown as the principle schematic that single hole carries out electro-migration testing of electro-migration testing structure of the present utility model.
Fig. 5 is shown as the principle schematic that stacking hole carries out electro-migration testing of electro-migration testing structure of the present utility model.
Element numbers explanation
1 electro-migration testing structure
11 metal wires
12 first stacking holes
12a～12c first, the 3rd, fifth hole
13 second stacking holes
13a～13c second, the 4th, clematis stem hole
14a～14f the first～the 6th test lead
F1, F1 ', F1 " first, the three, the 5th voltage tester ends
F2, F2 ', F2 " second, the four, the 6th voltage tester ends
S1, S1 ', S1 " first, the three, the 5th testing current ends
S2, S2 ', S2 " second, the four, the 6th testing current ends
Detailed description of the invention
Below by way of specific instantiation, embodiment of the present utility model being described, those skilled in the art the content disclosed by this specification can understand other advantages of the present utility model and effect easily.This utility model can also be carried out by additionally different detailed description of the invention or apply, and the every details in this specification based on different viewpoints and application, can also carry out various modification or change under without departing from spirit of the present utility model.
Refer to Fig. 1～Fig. 5.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present utility model in a schematic way, then assembly that in graphic, only display is relevant with this utility model but not component count when implementing according to reality, shape and size drafting, during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout kenel is likely to increasingly complex.
As shown in Fig. 1～Fig. 2, the present invention provides a kind of electro-migration testing structure 1, and described electro-migration testing structure 1 at least includes:
It is positioned at the metal wire 11 of the first metal layer, the two ends of described metal wire 11 are connected to the second metal level respectively through the first through hole 12a and the second through hole 13a, and the two ends of described first through hole 12a and described second through hole 13a connect the test lead being arranged in described the first metal layer and described second metal level respectively.Being provided with multiple through hole being sequentially connected between each metal level on described second metal level, form stacking hole respectively with described first through hole 12a and described second through hole 13a, the superiors' through hole connects the test lead being arranged in topmost metal layer.
Specifically, as in figure 2 it is shown, described metal wire 11 is arranged in described the first metal layer, its material includes but not limited to Cu or Al, and its width is not more than the minimum feature of wafer to be measured.In the present embodiment, described the first metal layer is underlying metal.The two ends of described metal wire 11 connect the first test lead 14a and the second test lead 14b that are arranged in described the first metal layer respectively.As it is shown in figure 1, described first test lead 14a includes the first voltage tester end F1 and the first testing current end S1, it is respectively used to apply voltage and current；Described second test lead 14b includes the second voltage tester end F2 and the second testing current end S2, is respectively used to apply voltage and current.
Specifically, as shown in Figure 2, the two ends of described metal wire 11 are connected to described second metal level respectively through described first through hole 12a and described second through hole 13a, being provided with the 3rd test lead 14c and the 4th test lead 14d in described second metal level, described 3rd test lead 14c and described 4th test lead 14d is connected with described first through hole 12a and described second through hole 13a respectively.As it is shown in figure 1, described 3rd test lead 14c includes tertiary voltage test lead F1 ' and the 3rd testing current end S1 ', it is respectively used to apply voltage and current；Described 4th test lead 14d includes the 4th voltage tester end F2 ' and the 4th testing current end S2 ', is respectively used to apply voltage and current.
Specifically, as shown in Figure 2, described first through hole 12a is connected to the through hole being sequentially connected between each metal level, form the first stacking hole 12, Fig. 2 only shows the fifth hole 12c of third through-hole 12b and top layer, other through holes between described third through-hole 12b and described fifth hole 12c all omit, and the quantity Matching of the quantity of through hole and metal level in described first stacking hole 12.The upper end of described fifth hole 12c connects the 5th test lead 14e, as it is shown in figure 1, described 5th test lead 14e includes the 5th voltage tester end F1 " and the 5th testing current end S1 ", it is respectively used to apply voltage and current.
Specifically, as shown in Figure 2, described second through hole 13a is connected to the through hole being sequentially connected between each metal level, form the second stacking hole 13, Fig. 2 only shows the clematis stem hole 13c of fourth hole 13b and top layer, other through holes between described fourth hole 13b and described clematis stem hole 13c all omit, and the quantity Matching of the quantity of through hole and metal level in described second stacking hole 13.The upper end of described clematis stem hole 13c connects the 6th test lead 14f, as it is shown in figure 1, described 6th test lead 14f includes the 6th voltage tester end F2 " and the 6th testing current end S2 ", it is respectively used to apply voltage and current.
As it is shown in figure 1, for the ease of display, in the present embodiment, the projection in vertical direction of each test lead is positioned at different positions.When actually used, in order to reduce the area shared by described electro-migration testing structure 1, each test lead and described metal wire 11 be arranged in parallel.
The operation principle of described electro-migration testing structure 1 is as follows:
As it is shown on figure 3, adopt described first test lead 14a and described second test lead 14b to realize metal wire electro-migration testing:
Described first testing current end S1 and described second testing current end S2 apply electric current, detects the voltage on described first voltage tester end F1 and described second voltage tester end F2, realize the electro-migration testing to metal wire with this.Or, described first voltage tester end F1 and described second voltage tester end F2 apply voltage, detect the voltage on described first testing current end S1 and described second testing current end S2, realize the electro-migration testing to described metal wire 11 with this.Now, described metal wire 11 is dispelled the heat by described first stacking hole 12 and described second stacking hole 13, improves the accuracy of test with this.
As shown in Figure 4, described 3rd test lead 14c and described 4th test lead 14d is adopted to realize single-pass hole electro-migration testing:
Described 3rd testing current end S1 ' and described 4th testing current end S2 ' applies electric current, detects the voltage on described tertiary voltage test lead F1 ' and described 4th voltage tester end F2 ', realize the electro-migration testing to single-pass hole with this.Or, described tertiary voltage test lead F1 ' and described 4th voltage tester end F2 ' apply voltage, detect the voltage on described 3rd testing current end S1 ' and described 4th testing current end S2 ', realize the electro-migration testing to single-pass hole with this.Now, described third through-hole 12b to described fifth hole 12c and described fourth hole 13b to described clematis stem hole 13c dispels the heat, and improves the accuracy of test with this.
As it is shown in figure 5, adopt described 5th test lead 14e and described 6th test lead 14f to realize stacking hole electro-migration testing:
At described 5th testing current end S1 " and described 6th testing current end S2 " on apply electric current, detect described 5th voltage tester end F1 " and described 6th voltage tester end F2 " on voltage, realize the electro-migration testing to stacking hole with this.Or, at described 5th voltage tester end F1 " and described 6th voltage tester end F2 " on apply voltage, detect described 5th testing current end S1 " and described 6th testing current end S2 " on voltage, realize the electro-migration testing to stacking hole with this.Now, described first test lead 14a～described 4th test lead 14d dispels the heat, and improves the accuracy of test with this.
As it has been described above, electro-migration testing structure of the present utility model, have the advantages that
1, multiple electro-migration testing structure of the prior art is integrated by electro-migration testing structure of the present utility model, will not take the valuable area on wafer more, without the cost of manufacture increasing test structure.
2, electro-migration testing structure of the present utility model makes the kind testing structure in equal area increase, and improves the utilization rate of wafer；The kind increase simultaneously testing structure causes that the wafer number for testing reduces, and reduces testing cost.
3, the different object such as metal wire, single through hole, stacking hole can be carried out electro-migration testing by electro-migration testing structure of the present utility model, is effectively ensured the q&r of semiconductor structure, substantially increases the yields of semiconductor device.
4, electro-migration testing structure of the present utility model is when carrying out the electro-migration testing of a kind of object, and other parts being not passed through electric current as heat dissipation channel, can improve the accuracy of test.
In sum, this utility model provides a kind of electro-migration testing structure, including: it is positioned at the metal wire of the first metal layer, the two ends of described metal wire are connected to the second metal level respectively through the first through hole and the second through hole, and the two ends of described first through hole and described second through hole connect the test lead being arranged in described the first metal layer and described second metal level respectively.Multiple electro-migration testing structure of the prior art is integrated by electro-migration testing structure of the present utility model, will not take the valuable area on wafer more, without the cost of manufacture increasing test structure；Make the kind testing structure in equal area increase, improve the utilization rate of wafer；The kind increase simultaneously testing structure causes that the wafer number for testing reduces, and reduces testing cost；The different object such as metal wire, single through hole, stacking hole can also be carried out electro-migration testing, be effectively ensured the q&r of semiconductor structure, substantially increase the yields of semiconductor device；When carrying out the electro-migration testing of a kind of object, other parts being not passed through electric current as heat dissipation channel, can improve the accuracy of test.So, this utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment only illustrative principle of the present utility model and effect thereof, not for restriction this utility model.Above-described embodiment all under spirit of the present utility model and category, can be modified or change by any those skilled in the art.Therefore, art has all equivalence modification or changes that usually intellectual completes under the spirit disclosed without departing from this utility model with technological thought such as, must be contained by claim of the present utility model.
Claims (6)
1. an electro-migration testing structure, it is characterised in that described electro-migration testing structure at least includes:
It is positioned at the metal wire of the first metal layer, the two ends of described metal wire are connected to the second metal level respectively through the first through hole and the second through hole, and the two ends of described first through hole and described second through hole connect the test lead being arranged in described the first metal layer and described second metal level respectively.
2. electro-migration testing structure according to claim 1, it is characterized in that: also include the multiple through holes being sequentially connected between each metal level being arranged on described second metal level, form stacking hole respectively with described first through hole and described second through hole, the superiors' through hole connects the test lead being arranged in topmost metal layer.
3. electro-migration testing structure according to claim 1 and 2, it is characterised in that: described test lead includes voltage tester end and testing current end.
4. electro-migration testing structure according to claim 1 and 2, it is characterised in that: each test lead is arranged with described metal lines run parallel.
5. electro-migration testing structure according to claim 1, it is characterised in that: the material of described metal wire is Cu or Al.
6. electro-migration testing structure according to claim 1, it is characterised in that: the width of described metal wire is not more than the minimum feature of wafer to be measured.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620065682.9U CN205376473U (en) | 2016-01-22 | 2016-01-22 | Electromigration test structure |
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| CN201620065682.9U CN205376473U (en) | 2016-01-22 | 2016-01-22 | Electromigration test structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108152699A (en) * | 2017-12-27 | 2018-06-12 | 中国电子产品可靠性与环境试验研究所 | The electromigration lifetime time tester and its test method of contact hole |
| CN108428639A (en) * | 2018-04-03 | 2018-08-21 | 武汉新芯集成电路制造有限公司 | A method of realizing that integrated circuitry lines are opened a way to short-circuit transition |
| CN110071053A (en) * | 2019-04-29 | 2019-07-30 | 上海华力微电子有限公司 | A kind of electro-migration testing structure |
| CN110620058A (en) * | 2019-09-23 | 2019-12-27 | 上海华力微电子有限公司 | Electromigration reliability test structure and electromigration reliability test method |
| CN111081681A (en) * | 2019-12-31 | 2020-04-28 | 长江存储科技有限责任公司 | Electromigration test structure and forming method thereof |
| CN112864131A (en) * | 2021-01-27 | 2021-05-28 | 武汉新芯集成电路制造有限公司 | Electromigration test structure and electromigration test method |
-
2016
- 2016-01-22 CN CN201620065682.9U patent/CN205376473U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108152699A (en) * | 2017-12-27 | 2018-06-12 | 中国电子产品可靠性与环境试验研究所 | The electromigration lifetime time tester and its test method of contact hole |
| CN108152699B (en) * | 2017-12-27 | 2020-07-10 | 中国电子产品可靠性与环境试验研究所 | Electromigration service life testing device and testing method of contact hole |
| CN108428639A (en) * | 2018-04-03 | 2018-08-21 | 武汉新芯集成电路制造有限公司 | A method of realizing that integrated circuitry lines are opened a way to short-circuit transition |
| CN110071053A (en) * | 2019-04-29 | 2019-07-30 | 上海华力微电子有限公司 | A kind of electro-migration testing structure |
| CN110620058A (en) * | 2019-09-23 | 2019-12-27 | 上海华力微电子有限公司 | Electromigration reliability test structure and electromigration reliability test method |
| CN111081681A (en) * | 2019-12-31 | 2020-04-28 | 长江存储科技有限责任公司 | Electromigration test structure and forming method thereof |
| CN111081681B (en) * | 2019-12-31 | 2021-07-20 | 长江存储科技有限责任公司 | Electromigration test structure and forming method thereof |
| CN112864131A (en) * | 2021-01-27 | 2021-05-28 | 武汉新芯集成电路制造有限公司 | Electromigration test structure and electromigration test method |
| CN112864131B (en) * | 2021-01-27 | 2024-04-16 | 武汉新芯集成电路制造有限公司 | Electromigration test structure and electromigration test method |
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