CN110620058A - Electromigration reliability test structure and electromigration reliability test method - Google Patents
Electromigration reliability test structure and electromigration reliability test method Download PDFInfo
- Publication number
- CN110620058A CN110620058A CN201910897833.5A CN201910897833A CN110620058A CN 110620058 A CN110620058 A CN 110620058A CN 201910897833 A CN201910897833 A CN 201910897833A CN 110620058 A CN110620058 A CN 110620058A
- Authority
- CN
- China
- Prior art keywords
- line
- voltage
- electromigration reliability
- test
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
Abstract
The application discloses electromigration reliability test structure and electromigration reliability test method, this test structure includes: the test line is an interconnection line in the integrated circuit; the first end of the first through hole is connected with the first end of the test line; the first lead is connected with the second end of the first through hole and the first current line, and the connection position of the first lead and the second end of the first through hole is connected with at least one pair of voltage sensing lines; the first end of the second through hole is connected with the second end of the test line; and the second lead is connected with the second end of the second through hole and the second current line, and the connection position of the second lead and the second end of the second through hole is connected with at least one voltage sensing line. According to the electromigration reliability testing device, at least one pair of voltage sensing lines are connected near the through hole, so that the probability of capturing resistance change of the testing lines can be increased, and the electromigration reliability testing accuracy is improved; meanwhile, when more than one pair of voltage sensing lines are arranged near the through hole, the probability of capturing the resistance change of the testing line can be further increased.
Description
Technical Field
The application relates to the technical field of reliability assessment in the field of semiconductor manufacturing, in particular to an electromigration reliability test structure and an electromigration reliability test method.
Background
The electromigration phenomenon refers to a phenomenon that when an integrated circuit in a semiconductor device works, current flows through a metal wire, and metal ions generate substance transportation under the action of the current. Therefore, some portions of the metal lines may be broken due to voids (Void) caused by the electromigration phenomenon, and some portions may be shorted due to hillocks (Hillock) caused by the electromigration phenomenon.
In the integrated circuit process development stage, reliability evaluation is an important part of successful evaluation of process development, and an electromigration reliability test for the electromigration phenomenon is an essential test in the later stage of process evaluation.
Referring to fig. 1, an electromigration reliability test structure provided in the related art is shown. The electromigration reliability test structure includes a test line 110, a first via 121, a second via 122, a first lead 131, and a second lead 132. The first lead 131 is connected to the first through hole 121, the first through hole 121 is connected to one end of the test line 110, the second through hole 122 is connected to the other end of the test line 110, and the second through hole 122 is connected to the second lead 132.
During testing, the first lead 131 is connected to the first voltage sensing line and the first current line, the second lead 132 is connected to the second voltage sensing line and the second current line, the first voltage sensing line, the second voltage sensing line, the first current line and the second current line are connected to the corresponding pads, current is supplied to the test structure through the first current line and the second current line, and the resistance of the voltage monitoring test line of the test line is measured through the first voltage sensing line and the second voltage sensing line.
In the test process of the test structure, because the through hole has a small volume, the time required for generating the cavity (such as the cavity 101 in fig. 1) by pushing the metal ions is short, the test line is generally wide and thick, the forming range of the cavity is large, and adjacent atoms supplement in the cavity accumulation process, when the resistance completely jumps, the cavity is formed at the bottom or the upper part of the through hole, so that the jump moment of the resistance of the test line is difficult to capture in time.
Disclosure of Invention
The application provides an electromigration reliability test structure and an electromigration reliability test method, which can solve the problem that the electromigration reliability test structure provided in the related technology is difficult to capture the change of the resistance of a test line.
In one aspect, an embodiment of the present application provides an electromigration reliability test structure, where the electromigration reliability test structure is used to detect electromigration reliability of an interconnection line in an integrated circuit, and includes:
the test line is an interconnection line in the integrated circuit;
a first through hole, a first end of which is connected with a first end of the test line;
a first lead connected to a second end of the first via and a first current line, a connection position of the first lead and the second end of the first via being connected to at least one pair of voltage sensing lines;
a second through hole, a first end of the second through hole being connected to a second end of the test line;
and the second lead is connected with the second end of the second through hole and the second current line, and the connection position of the second lead and the second end of the second through hole is connected with at least one voltage sensing line.
Optionally, the connection position of the test line and the first end of the first through hole is further connected with at least one pair of voltage sensing lines;
the connection position of the test line and the first end of the second through hole is also connected with at least one voltage sensing line.
Optionally, the connection position of the second lead and the second end of the second via is further connected to at least one pair of voltage sensing lines.
Optionally, the connection position of the test line and the first end of the second via is further connected to at least one pair of voltage sensing lines.
Optionally, when the electromigration reliability test structure works, current is introduced to the electromigration reliability test structure through the first current line and the second current line; measuring at least one of the following voltages:
a voltage between any one voltage sensing line of each pair of voltage sensing lines at a connection location of the first lead and the second end of the first via and any one voltage sensing line at a connection location of the second lead and the second end of the second via;
a voltage between any one voltage sensing line of each pair of voltage sensing lines at a connection location of the test line and the first end of the first via and any one voltage sensing line at a connection location of the test line and the first end of the second via;
a voltage between either voltage sense line of each pair of voltage sense lines at a connection location of the second lead and the second end of the second via and either voltage sense line of each pair of voltage sense lines at a connection location of the first lead and the second end of the first via;
a voltage between any one of the voltage sensing lines of each pair of voltage sensing lines at a connection location of the test line and the first end of the second via and any one of the voltage sensing lines of each pair of voltage sensing lines at a connection location of the test line and the first end of the first via.
Optionally, the widths of the test line, the first through hole, the second through hole, the first lead, and the second lead are less than 130 nm.
Optionally, the widths of the first current line, the second current line, and the voltage sensing line are less than 130 nanometers.
Optionally, a distance between each of the first current line, the second current line, and the voltage sensing line is less than 130 nm.
Optionally, the test line includes copper and tantalum, and the first via and the second via include copper and tantalum.
Optionally, the test line includes aluminum and titanium, and the first via hole and the second via hole include tungsten.
In another aspect, the present application provides an electromigration reliability test method, for detecting electromigration reliability of an interconnection line in an integrated circuit, including:
introducing current to any one of the electromigration reliability test structures;
monitoring the voltage value between each pair of voltage sensing lines, taking out the test line when the voltage is monitored between any one pair of voltage sensing lines in at least one pair of voltage sensing lines, and carrying out failure physical analysis on the test line to capture a site for cavity formation; or
Monitoring the voltage value between each pair of voltage sensing lines, and when the voltage is monitored between any one pair of voltage sensing lines in at least one pair of voltage sensing lines, starting to record time until the voltage does not change any more so as to record the time for obtaining the formation of the cavity; and analyzing the failure physical property of the test line according to the time for forming the cavity.
Optionally, the value of the current density introduced into the electromigration reliability test structure ranges from 1 milliampere/square centimeter to 10 milliampere/square centimeter.
Optionally, the testing temperature range of the electromigration reliability testing method is 150 to 450 ℃.
The technical scheme at least comprises the following advantages:
at least one pair of voltage sensing lines are connected near the first through hole, and the holes are usually generated near the through holes, so that the probability of capturing resistance change of the testing lines can be increased, and the accuracy of electromigration reliability testing is improved; meanwhile, when more than one pair of voltage sensing lines are arranged near the through hole, the probability of capturing the resistance change of the testing line can be further increased.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of an electromigration reliability test structure provided in the related art;
FIG. 2 is a schematic diagram illustrating a top view of an electromigration reliability test structure provided in accordance with an exemplary embodiment of the present application;
FIG. 3 is a flowchart of a method for electromigration reliability testing as provided by an exemplary embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
In the embodiment of the application, the direction in which the length of the test line is defined is an X axis, the direction in which the length of the through hole is defined is a Z axis, and the directions perpendicular to the X axis and the Z axis are defined as Y axes.
Example 1:
referring to fig. 2, the electromigration reliability test structure 200 provided in this embodiment includes:
a testline 210, the testline 210 being an interconnect line in an integrated circuit.
A first via 221, a first end of the first via 221 being connected to a first end of the test line 210.
The first lead 231, the first lead 231 is connected to the second end of the first via 221 and the first current line 241, and a connection position of the first lead 231 and the second end of the first via 221 is connected to at least one pair of voltage sensing lines 250. It should be noted that fig. 2 illustrates a pair of voltage sensing lines, and in an actual structure, more than one pair of voltage sensing lines may be disposed at a connection position between the first lead 231 and the second end of the first via 221.
Optionally, the connection position of the first lead 231 and the second end of the first via 221 is connected to at least two pairs of voltage sensing lines; alternatively, as an alternative to "the connection position of the first lead 231 and the second end of the first via 221 is connected to the at least one pair of voltage sensing lines 250": the second end of the first via 221 is connected to at least one pair of voltage sensing lines.
And a second through hole 222, a first end of the second through hole 222 being connected to a second end of the test line 210.
And a second lead 232, wherein the second lead 232 is connected to the second end of the second via 222 and the second current line 242, and the connection position of the second lead 232 and the second end of the second via 222 is connected to at least one voltage sensing line 250.
In summary, in the embodiment, at least one pair of voltage sensing lines is connected near the lower layer of the first via (the connection position of the first lead 231 and the second end of the first via 221, or the second end of the first via 221), and since the void is usually generated near the via, the probability of capturing the resistance change of the testing line can be increased, and the accuracy of the electromigration reliability test is improved; meanwhile, when more than one pair of voltage sensing lines are arranged near the through hole, the probability of capturing the resistance change of the testing line can be further increased.
Example 2:
referring to example 1, example 2 differs from example 2 in that: the connection position of the test line 210 and the first end of the first via 221 is further connected to at least one pair of voltage sensing lines, and the connection position of the test line 210 and the first end of the second via 222 is further connected to at least one voltage sensing line 250.
Illustratively, as shown in fig. 2, the connection locations of the test line 210 and the first end of the first via 221 are connected to a pair of voltage sensing lines 250. It should be noted that fig. 2 illustrates a pair of voltage sensing lines, and in an actual structure, more than one pair of voltage sensing lines may be disposed at a connection position between the test line 210 and the first end of the first via 221.
Optionally, the connection position of the test line 210 and the first end of the first via 221 is connected to at least two pairs of voltage sensing lines; alternatively, as an alternative to "the connection position of the test line 210 and the first end of the first via 221 is connected to at least one pair of voltage sensing lines": the first end of the first via 221 is connected to at least one pair of voltage sensing lines.
In this embodiment, at least one pair of voltage sensing lines is connected near the upper layer of the first via (the connection position of the test line 210 and the first end of the first via 221, or the first end of the first via 221), so as to further increase the probability of capturing the resistance change of the test line, and improve the accuracy of the electromigration reliability test.
Example 3:
referring to example 1 and example 2, example 3 differs from example 1 and example 2 in that: the connection location of the second lead 232 and the second end of the second via 222 is also connected to at least one pair of voltage sensing lines.
Optionally, the connection position of the second lead 232 and the second end of the second through hole 222 is connected with at least two pairs of voltage sensing lines; alternatively, as an alternative to "the connection position of the second lead 232 and the second end of the second through-hole 222 is connected to at least one pair of voltage sensing lines": the second end of the second via 222 is connected to at least one pair of voltage sense lines.
In this embodiment, at least one pair of voltage sensing lines is connected near the lower layer of the second via (the connection position of the second lead 232 and the second end of the second via 222, or the second end of the second via 222), so as to further increase the probability of capturing the resistance change of the testing line and improve the accuracy of the electromigration reliability test.
Example 4:
referring to example 1 and example 2, example 3 differs from example 1 and example 2 in that: the connection location of the test line 210 and the first end of the second via 222 is also connected to at least one pair of voltage sense lines.
Optionally, the connection position of the test line 210 and the first end of the second through hole 222 is connected with at least two pairs of voltage sensing lines; alternatively, as an alternative to "the connection position of the test line 210 and the first end of the second via hole 222 is connected to at least one pair of voltage sensing lines": the first end of the second via 222 is connected to at least one pair of voltage sensing lines.
In this embodiment, at least one pair of voltage sensing lines is connected near the upper layer of the second via (the connection position of the test line 210 and the first end of the second via 222, or the first end of the second via 222), so as to further increase the probability of capturing the resistance change of the test line, and improve the accuracy of the electromigration reliability test.
In the above embodiments, the widths of the test line 210, the first via 221, the second via 222, the first lead 231, and the second lead 232, and the spacing between the above structures are the minimum spacing allowed by the process or design. Optionally, the widths of the test line 210, the first via 221, the second via 222, the first lead 231, and the second lead 232 are less than 130 nm.
In the above embodiments, the widths of the first current line 241, the second current line 242, and the voltage sensing line 250, and the spacing between the above structures are the minimum spacing allowed by the process or design. Optionally, the widths of the first current line 241, the second current line 242, and the voltage sensing line 250 are less than 130 nm; optionally, the distance between each of the first current line 241, the second current line 242, and the voltage sensing line 250 is less than 130 nm.
In the above embodiment, the test line 210 includes copper (Cu) and tantalum (Ta), and the first via 221 and the second via 222 include copper and tantalum. For example, the test line 210 may be a multi-layered metal interconnect line including periodically stacked copper/tantalum alloy layers.
In the above embodiment, the test line 210 includes aluminum (Al) and titanium (Ti), and the first via 221 and the second via 222 include tungsten (W). For example, the test line 210 may be a multi-layered metal interconnect line including periodically stacked aluminum/titanium alloy layers.
In the above embodiment, the first current line 241, the second current line 242, and the voltage sensing line 250 are connected to the respective pads. For example, as shown in fig. 2, a first current line 241 is connected to pad 1, a second current line 242 is connected to pad 5, a voltage sensing line 250 at a connection position of a first lead 231 and a second end of a first via 221 is connected to pad 2 and pad 3, respectively, a voltage sensing line 250 at a connection position of a test line 210 and a first end of the first via 221 is connected to pad 8 and pad 7, respectively, a voltage sensing line 250 at a connection position of a second lead 232 and a second end of a second via 222 is connected to pad 4, and a voltage sensing line 250 at a connection position of a test line 210 and a first end of a second via 222 is connected to pad 6.
In the above embodiment, when the electromigration reliability test structure works, the current is introduced to the electromigration reliability test structure through the first current line and the second current line, and the voltage is measured. Wherein the voltage may be at least one of the following voltages:
(1) a voltage between any one of the voltage sensing lines of each pair at the connection position of the first lead 231 and the second end of the first via 221, and any one of the voltage sensing lines at the connection position of the second lead 232 and the second end of the second via 222.
For example, as shown in fig. 2, the voltage may be measured by measuring the voltage between the pad 2 and the pad 4, or the voltage between the pad 3 and the pad 4.
(2) A voltage between any one of the voltage sensing lines of each pair of the test line 210 and the connection position of the first end of the first via 221, and any one of the voltage sensing lines of the test line 210 and the connection position of the first end of the second via 222.
For example, as shown in fig. 2, the voltage may be measured by measuring the voltage between the pad 8 and the pad 6, or the voltage between the pad 7 and the pad 4.
(3) A voltage between any one of the voltage sensing lines of each pair at a connection position of the second lead 232 and the second end of the second via 222, and any one of the voltage sensing lines of each pair at a connection position of the first lead 231 and the second end of the first via 221.
(4) A voltage between any one of the voltage sensing lines of each pair at a connection position of the test line 210 and the first end of the second via 222, and any one of the voltage sensing lines of each pair at a connection position of the test line 210 and the first end of the first via 221.
Specific test methods reference is made to the following examples.
Example 5:
FIG. 3 illustrates a flowchart of a method for electromigration reliability testing as provided by an exemplary embodiment of the present application. The method uses the electromigration reliability test structure provided by any of the above embodiments for testing, the method comprising:
step 301, a current is applied to the electromigration reliability test structure provided in any of the above embodiments.
And introducing current to the electromigration reliability test structure through the first current line and the second current line. For example, current may be passed to the electromigration reliability test structure by passing current between a pad to which the first current line is connected and a pad to which the second current line is connected. After step 301 is performed, step 302a may be performed or step 302b may be performed.
Step 302a, monitoring voltage, taking out the test wire when the voltage is monitored, and carrying out failure physical analysis on the test wire to capture a site for forming a cavity.
And step 302b, monitoring the voltage, starting to record time when the voltage is monitored until the voltage is not changed any more, recording the time of forming the cavity, and analyzing the failure physical property of the test line according to the time of forming the cavity.
The voltage in the above embodiment may be at least one of the above voltages (1) to (4).
In the above embodiment, the value of the current density introduced into the electromigration reliability test structure ranges from 1 ma/cm to 10 ma/cm. Preferably, the current density passed into the electromigration reliability test structure is 2.22 milliamps per square centimeter.
In the above embodiments, the testing temperature range of the electromigration reliability testing method is 150 to 450 ℃. Preferably, the testing temperature of the electromigration reliability testing method is 300 ℃.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (13)
1. An electromigration reliability test structure, wherein the electromigration reliability test structure is used for detecting electromigration reliability of an interconnect line in an integrated circuit, comprising:
the test line is an interconnection line in the integrated circuit;
a first through hole, a first end of which is connected with a first end of the test line;
a first lead connected to a second end of the first via and a first current line, a connection position of the first lead and the second end of the first via being connected to at least one pair of voltage sensing lines;
a second through hole, a first end of the second through hole being connected to a second end of the test line;
and the second lead is connected with the second end of the second through hole and the second current line, and the connection position of the second lead and the second end of the second through hole is connected with at least one voltage sensing line.
2. The electromigration reliability test structure of claim 1, wherein the connection location of the test line and the first end of the first via is further connected to at least one pair of voltage sense lines;
the connection position of the test line and the first end of the second through hole is also connected with at least one voltage sensing line.
3. The electromigration reliability test structure of claim 2, wherein the connection location of the second lead and the second end of the second via is further connected to at least one pair of voltage sense lines.
4. The electromigration reliability test structure of claim 3, wherein the connection location of the test line and the first end of the second via is further connected to at least one pair of voltage sense lines.
5. The electromigration reliability test structure of claim 4, wherein when the electromigration reliability test structure is in operation, a current is passed to the electromigration reliability test structure through the first current line and the second current line; measuring at least one of the following voltages:
a voltage between either voltage sense line of each pair of voltage sense lines at a connection location of the first lead and the second end of the first via and either voltage sense line at a connection location of the second lead and the second end of the second via;
a voltage between the test line and any one of the pair of voltage sensing lines at the connection position of the first end of the first via and any one of the pair of voltage sensing lines at the connection position of the test line and the first end of the second via;
a voltage between either voltage sense line of each pair of voltage sense lines at a connection location of the second lead and the second end of the second via and either voltage sense line of each pair of voltage sense lines at a connection location of the first lead and the second end of the first via;
a voltage between the test line and any one of the pair of voltage sensing lines at the connection location of the first end of the first via and the test line.
6. The electromigration reliability test structure of any of claims 1 to 4, wherein the width of the test line, the first via, the second via, the first lead, and the second lead is less than 130 nm.
7. The electromigration reliability test structure of claim 6, wherein the widths of the first current line, the second current line, and the voltage sense line are less than 130 nanometers.
8. The electromigration reliability test structure of claim 7, wherein a distance between each of the first current line, the second current line, and the voltage sense line is less than 130 nm.
9. The electromigration reliability test structure of any of claims 1 to 4, wherein the test line comprises copper and tantalum, and the first via and the second via comprise copper and tantalum.
10. The electromigration reliability test structure of any of claims 1 to 4, wherein the test line comprises aluminum and titanium, and the first via and the second via comprise tungsten.
11. An electromigration reliability test method, which is used for testing the electromigration reliability of an interconnection line in an integrated circuit, and comprises the following steps:
applying a current to the electromigration reliability test structure of any of claims 1 to 10;
monitoring voltage, and when the voltage is monitored, taking out a test wire, and carrying out failure physical analysis on the test wire so as to capture a site for forming a cavity; or
Monitoring voltage, and when the voltage is monitored, starting to record time until the voltage is not changed any more so as to record the time for obtaining the cavity formation; and analyzing the failure physical property of the test line according to the time for forming the cavity.
12. The electromigration reliability test method of claim 11 wherein a current density passing into the electromigration reliability test structure has a value in a range of 1 ma/cm to 10 ma/cm.
13. The electromigration reliability test method of claim 11 or 12, wherein a test temperature of the electromigration reliability test method is in a range of 150 degrees celsius to 450 degrees celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910897833.5A CN110620058B (en) | 2019-09-23 | 2019-09-23 | Electromigration reliability test structure and electromigration reliability test method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910897833.5A CN110620058B (en) | 2019-09-23 | 2019-09-23 | Electromigration reliability test structure and electromigration reliability test method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110620058A true CN110620058A (en) | 2019-12-27 |
| CN110620058B CN110620058B (en) | 2022-02-11 |
Family
ID=68924095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910897833.5A Active CN110620058B (en) | 2019-09-23 | 2019-09-23 | Electromigration reliability test structure and electromigration reliability test method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110620058B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117148027A (en) * | 2023-10-31 | 2023-12-01 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromigration test device and method |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3402759A1 (en) * | 1984-01-27 | 1985-08-01 | Robert Bosch Gmbh, 7000 Stuttgart | CURRENT CONTROLLER FOR ELECTROMAGNETIC ACTUATORS |
| JP2000003947A (en) * | 1998-06-15 | 2000-01-07 | Nec Corp | Semiconductor device for electromigration test |
| JP2000174085A (en) * | 1998-12-08 | 2000-06-23 | Nec Corp | Semiconductor reliability evaluation device and method |
| US6417572B1 (en) * | 1997-08-13 | 2002-07-09 | International Business Machines Corporation | Process for producing metal interconnections and product produced thereby |
| US20030034558A1 (en) * | 2001-08-14 | 2003-02-20 | Eiichi Umemura | Inspection pattern, inspection method, and inspection system for detection of latent defect of multi-layer wiring structure |
| KR20030050651A (en) * | 2001-12-19 | 2003-06-25 | 주식회사 하이닉스반도체 | Test pattern for evaluation electromigration |
| US20040026693A1 (en) * | 2002-08-07 | 2004-02-12 | International Business Machines Corporation | Test structure for locating electromigration voids in dual damascene interconnects |
| US20080128693A1 (en) * | 2006-11-30 | 2008-06-05 | Semiconductor Manufacturing International Corporation | Reliability test structure for multilevel interconnect |
| CN202281810U (en) * | 2011-09-05 | 2012-06-20 | 上海华虹Nec电子有限公司 | Electromigration test structure |
| CN104576613A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Electron migration testing method and structure |
| CN104835802A (en) * | 2014-02-07 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | Electro-Migration structure and EM test method |
| CN105097783A (en) * | 2015-07-22 | 2015-11-25 | 上海华力微电子有限公司 | Metal electro-migration testing structure and metal electro-migration testing method |
| CN205248238U (en) * | 2015-12-23 | 2016-05-18 | 中芯国际集成电路制造(北京)有限公司 | Reliability test structure |
| CN205376473U (en) * | 2016-01-22 | 2016-07-06 | 中芯国际集成电路制造(北京)有限公司 | Electromigration test structure |
| CN107045993A (en) * | 2016-02-05 | 2017-08-15 | 中芯国际集成电路制造(上海)有限公司 | Electro-migration testing device, electro-migration testing system and its method of testing |
| US20170242067A1 (en) * | 2016-02-19 | 2017-08-24 | Globalfoundries Inc. | Interconnect reliability structures |
| CN108573890A (en) * | 2018-04-10 | 2018-09-25 | 上海华力微电子有限公司 | A kind of copper metal interconnection electro-migration testing structure and its test method |
| CN109742066A (en) * | 2018-12-29 | 2019-05-10 | 上海华力集成电路制造有限公司 | Electro-migration testing structure and test method |
| CN109979842A (en) * | 2019-03-29 | 2019-07-05 | 上海华力集成电路制造有限公司 | Chip failure tests structure, the chip including it and application its test method |
| CN110071053A (en) * | 2019-04-29 | 2019-07-30 | 上海华力微电子有限公司 | A kind of electro-migration testing structure |
-
2019
- 2019-09-23 CN CN201910897833.5A patent/CN110620058B/en active Active
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3402759A1 (en) * | 1984-01-27 | 1985-08-01 | Robert Bosch Gmbh, 7000 Stuttgart | CURRENT CONTROLLER FOR ELECTROMAGNETIC ACTUATORS |
| US6417572B1 (en) * | 1997-08-13 | 2002-07-09 | International Business Machines Corporation | Process for producing metal interconnections and product produced thereby |
| JP2000003947A (en) * | 1998-06-15 | 2000-01-07 | Nec Corp | Semiconductor device for electromigration test |
| JP2000174085A (en) * | 1998-12-08 | 2000-06-23 | Nec Corp | Semiconductor reliability evaluation device and method |
| US20030034558A1 (en) * | 2001-08-14 | 2003-02-20 | Eiichi Umemura | Inspection pattern, inspection method, and inspection system for detection of latent defect of multi-layer wiring structure |
| KR20030050651A (en) * | 2001-12-19 | 2003-06-25 | 주식회사 하이닉스반도체 | Test pattern for evaluation electromigration |
| US20040026693A1 (en) * | 2002-08-07 | 2004-02-12 | International Business Machines Corporation | Test structure for locating electromigration voids in dual damascene interconnects |
| US20080128693A1 (en) * | 2006-11-30 | 2008-06-05 | Semiconductor Manufacturing International Corporation | Reliability test structure for multilevel interconnect |
| CN202281810U (en) * | 2011-09-05 | 2012-06-20 | 上海华虹Nec电子有限公司 | Electromigration test structure |
| CN104576613A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Electron migration testing method and structure |
| CN104835802A (en) * | 2014-02-07 | 2015-08-12 | 中芯国际集成电路制造(上海)有限公司 | Electro-Migration structure and EM test method |
| CN105097783A (en) * | 2015-07-22 | 2015-11-25 | 上海华力微电子有限公司 | Metal electro-migration testing structure and metal electro-migration testing method |
| CN205248238U (en) * | 2015-12-23 | 2016-05-18 | 中芯国际集成电路制造(北京)有限公司 | Reliability test structure |
| CN205376473U (en) * | 2016-01-22 | 2016-07-06 | 中芯国际集成电路制造(北京)有限公司 | Electromigration test structure |
| CN107045993A (en) * | 2016-02-05 | 2017-08-15 | 中芯国际集成电路制造(上海)有限公司 | Electro-migration testing device, electro-migration testing system and its method of testing |
| US20170242067A1 (en) * | 2016-02-19 | 2017-08-24 | Globalfoundries Inc. | Interconnect reliability structures |
| CN108573890A (en) * | 2018-04-10 | 2018-09-25 | 上海华力微电子有限公司 | A kind of copper metal interconnection electro-migration testing structure and its test method |
| CN109742066A (en) * | 2018-12-29 | 2019-05-10 | 上海华力集成电路制造有限公司 | Electro-migration testing structure and test method |
| CN109979842A (en) * | 2019-03-29 | 2019-07-05 | 上海华力集成电路制造有限公司 | Chip failure tests structure, the chip including it and application its test method |
| CN110071053A (en) * | 2019-04-29 | 2019-07-30 | 上海华力微电子有限公司 | A kind of electro-migration testing structure |
Non-Patent Citations (1)
| Title |
|---|
| 吴丰顺等: "无铅互连凸点电迁移失效的四探针测量 ", 《华中科技大学学报(自然科学版)》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117148027A (en) * | 2023-10-31 | 2023-12-01 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromigration test device and method |
| CN117148027B (en) * | 2023-10-31 | 2024-01-30 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Electromigration test device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110620058B (en) | 2022-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI601222B (en) | Integrated circuit (ic) test structure with monitor chain and test wires | |
| US7081758B2 (en) | Inspection pattern, inspection method, and inspection system for detection of latent defect of multi-layer wiring structure | |
| US7317203B2 (en) | Method and monitor structure for detecting and locating IC wiring defects | |
| CN100561731C (en) | Multistage interconnected reliability testing structure | |
| US6822473B1 (en) | Determination of permeability of layer material within interconnect | |
| JP5132162B2 (en) | Semiconductor integrated circuit | |
| CN108573890A (en) | A kind of copper metal interconnection electro-migration testing structure and its test method | |
| CN110620058B (en) | Electromigration reliability test structure and electromigration reliability test method | |
| CN101546751B (en) | Electro-migration testing structure capable of improving service life | |
| US8174010B2 (en) | Unified test structure for stress migration tests | |
| US9875964B2 (en) | Semiconductor device components and methods | |
| US9759766B2 (en) | Electromigration test structure for Cu barrier integrity and blech effect evaluations | |
| US20040026693A1 (en) | Test structure for locating electromigration voids in dual damascene interconnects | |
| CN108447797A (en) | Metal electro-migration test structure and the metal electro-migration test method for using the structure | |
| US7901954B2 (en) | Method for detecting a void | |
| JP3420092B2 (en) | Semiconductor reliability evaluation device and its evaluation method | |
| EP2385551A1 (en) | Silicon substrate wafer and test method | |
| JPH11214628A (en) | Method of testing wiring of semiconductor device, wiring testing circuit and wiring tester | |
| US8810252B2 (en) | Solder joint inspection | |
| US20080252306A1 (en) | Displacement detection pattern for detecting displacement between wiring and via plug, displacement detection method, and semiconductor device | |
| JP3521564B2 (en) | Semiconductor device | |
| JP2004022570A (en) | Semiconductor device containing evaluating element and failure analyzing method using the evaluating element | |
| US5670883A (en) | Integrated circuit interlevel conductor defect characterization test structure and system | |
| CN115602663A (en) | Electrical test structure, semiconductor structure and electrical test method | |
| JP2005223227A (en) | Semiconductor device and evaluating method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |