CN108573890A - A kind of copper metal interconnection electro-migration testing structure and its test method - Google Patents
A kind of copper metal interconnection electro-migration testing structure and its test method Download PDFInfo
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- CN108573890A CN108573890A CN201810316625.7A CN201810316625A CN108573890A CN 108573890 A CN108573890 A CN 108573890A CN 201810316625 A CN201810316625 A CN 201810316625A CN 108573890 A CN108573890 A CN 108573890A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The invention discloses a kind of copper metals to interconnect electro-migration testing structure, including a metal wire, is horizontally disposed with, including；Multiple upper metal layers are horizontally placed on the upper layer of the metal wire；Multiple lower metal layers are horizontally placed on the lower layer of the metal wire；Multiple upper metal layers connect through-hole, are separately connected the upper metal layers and metal wire；Multiple lower metal layers connect through-hole, are separately connected the lower metal layer and metal wire；Multiple connecting lines, difference one end connect the upper metal layers or lower metal layer；Multiple metallic plates.Also disclose a kind of test method of copper metal interconnection electro-migration testing structure.The test result of copper metal interconnection electro-migration testing structure according to the present invention designs the test structure for relatively meeting manufacturing process, influence of the via process for back segment metal interconnection structure is opened in monitoring metal wire upper end well, so as to improve barrier layer or back segment copper metal interconnection process, the risk of product volume production is reduced.
Description
Technical field
The present invention relates to a kind of semiconductor copper metal layer test structures more particularly to a kind of copper metal to interconnect electro-migration testing
Structure and its test method.
Background technology
With the development of technology node, electromigration has become metal in integrated circuit and interconnects important reliability concerns heat
Point, in typical electromigration assessment, there are two types of structure, include as Fig. 1 test electronics downlink situation (downstream) with
The metal wire of electromigration or the failure mode of through-hole (via) are assessed such as the test electronics uplink situation (upstream) of Fig. 2
And the prediction in service life.From the viewpoint of electromigration invalidation, the survey generally in test electronics uplink situation (upstream)
It will appear hole on tested metal wire (trench void) and via aperture (via void) in examination structure；In test electronics
Generally occur in the test structure of downlink situation (downstream) via bottoms hole (void beneath via) and by
Hole (trench void) on metal wire is surveyed, all holes (void) are almost seldom formed in anode.
But as technology node develops, the failure of electromigration (EM, electromigration) whether with keep before
It is consistent unknown.With the reduction of size, more and more thinner barrier layer (barrier) and preferably copper (Cu) filling come
The resistance for reducing circuit, to improve the performance of circuit.But barrier layer (barrier) it is thinning, higher electricity can be caused to move
Risk is moved, equally can also cause to test electronics downlink situation (downstream) and test electronics uplink situation (upstream)
Test structure failure mechanism difference.As shown in fig. 6, upper end open via process (Upper via open process) by
One will produce with the interface that connects (Cu/barrier interface) on barrier layer for copper in having used wet chemical reagent
Fixed destruction (damage) makes so that the Cu atoms at metal wire edge are easier to spread under the action of electron wind
The test structure for obtaining EM is easier to destroy, and this situation is also consistent with technique.So usually used EM
Upstream structures have certain limitation.
Invention content
The present invention is to solve the above problem in the prior art and propose a kind of more can accurately be estimated to metal wire reality
The copper metal interconnection electro-migration testing structure and its test method of border service life.
The present invention provides a kind of copper metals to interconnect electro-migration testing structure first.
To achieve the above object, the present invention uses following technical scheme：
A kind of copper metal interconnection electro-migration testing structure, including
One metal wire is horizontally disposed with, including；
Multiple upper metal layers are horizontally placed on the upper layer of the metal wire；
Multiple lower metal layers are horizontally placed on the lower layer of the metal wire；
Multiple upper metal layers connect through-hole, are separately connected the upper metal layers and metal wire；
Multiple lower metal layers connect through-hole, are separately connected the lower metal layer and metal wire；
Multiple connecting lines, difference one end connect the upper metal layers or lower metal layer；
The other end that at least two metallic plates are connected to same connecting line is respectively set in multiple metallic plates.
In order to advanced optimize above-mentioned technical proposal, the technical measures that the present invention is taken are：
Preferably, upper metal layers same level face is arranged two, and the center line of the relatively described metal wire is symmetrical to each other
Setting.
It is furthermore preferred that lower metal layer same level face is arranged two, the center line pair of the relatively described metal wire to each other
Claim setting.
It is furthermore preferred that the metallic plate is arranged side by side multiple on same connecting line.
It is furthermore preferred that the metal wire is set as copper double damask structure.
It is furthermore preferred that the metal wire is disposed with the first low-k material layers, silicon-carbon nitrogen layer, copper metal from top to bottom
Layer, barrier layer, the 2nd low-k material layers.
It is furthermore preferred that the barrier layer is tantalum and tantalum nitride material.
It is furthermore preferred that the copper metal layer setting is in the cavity made of barrier layer and the enclosing of silicon-carbon nitrogen layer.
It is furthermore preferred that the barrier layer setting is in the cavity made of the 2nd low-k material layers and the enclosing of silicon-carbon nitrogen layer.
Secondly the present invention provides the test methods that a kind of copper metal interconnects electro-migration testing structure.
To achieve the above object, the present invention uses following technical scheme：
A kind of test method of copper metal interconnection electro-migration testing structure, includes the following steps：
S1 selects same group of same material and multiple copper metals of setting to interconnect electro-migration testing structure as test sample；
S2 selects two different connecting lines one and connecting line two of one of copper metal interconnection electro-migration testing structure；
Metallic plate one and metallic plate two series connection being arranged on S3 connecting lines one；The metallic plate three and gold being arranged on connecting line two
Belong to plate four to connect；
S4 adds current stress between connecting line one and the metallic plate two and metallic plate four at the relatively farther end of connecting line two；
S5 measures both end voltage closer between the metallic plate one and metallic plate three at end relatively in connecting line one and connecting line two；
S6 calculates metal wire resistance value according to electric current and voltage；
S7 continues record current and voltage, and calculates change in resistance in real time, after reaching 10% resistance shift, record electricity
Migrate the out-of-service time；
S8 calculates the activation energy factor according to the electromigration invalidation time；
S9 goes out the operational failure time of sample according to Bu Lake equation calculations；
S10 organizes this testing procedure that all copper metals interconnect the test sample progress S2-S9 of electro-migration testing structure；
S11 takes logarithm normal distribution to the operational failure time of all test samples, extrapolates accumulative failure and is
When 0.1%, the service life of the metal wire under operating condition；
Connecting line that S12 selects another pair different and the testing procedure that all samples are carried out with S10-S11；
S13 is according to the test data in the service life of the metal wire of obtained all multiple and different current paths, to institute
The deelectric transferred performance for stating metal wire is assessed.
The present invention is had the following technical effect that compared with prior art using above-mentioned technical proposal：
The test result of copper metal interconnection electro-migration testing structure according to the present invention, which is designed, relatively meets manufacturing process
Test structure, monitoring metal wire upper end well, to open via process (upper via open process) mutual for back segment metal
The influence for linking structure reduces product volume production so as to improve barrier layer (barrier) or back segment copper (Cu) metal interconnection process
Risk.The design of this test structure more can true simulation circuit structure, can preferably monitor manufacturing process to back segment metal
The influence in interconnection structure service life achievees the purpose that improve technique in time to find the problems in manufacturing process earlier.
The present invention opens via process (via from the failure mechanism angle of new electromigration, for metal wire upper end
Landing on metal edge) for through-hole fall metal wire edge technique to copper and blocking bed boundary between (Cu/
Barrier copper (Cu) atom caused by (damage) is destroyed caused by) on the faster diffusion road that electronics wind action is formed
Diameter, such a process are effectively monitored, and are effectively improved that the barrier layer (barrier) occurred in technical process is excessively thin to draw
The resistance value of the back segment circuit of entire chip caused by easy the problem of electromigration occurs risen and barrier layer (barrier) are blocked up compared with
The problem of height, chip performance declines.
And the further diminution of size increases the influence factor of the out-of-service time of entire metal wire, original
Test structure, such as only test of test electronics downlink situation (downstream) or test electronics uplink situation (upstream)
In method, the situation of a part can only be analyzed, can not more accurately obtain the test result of entire metal wire on the whole.And
After having further reduced the parameter of metal wire, other influence factors are also had, under existing experiment condition, because of technique
Limitation, hardly result in ideal metal wire, and existing means of testing can not accurately obtain making for whole metal wire very much
With the service life, it is therefore desirable to carry out the test of actual metal line, the present invention can directly obtain more accurate gold in actual use
Belong to the out-of-service time data of line, compared with the out-of-service time estimated by theoretical value after part of detecting parameter, more accurately.
Description of the drawings
Fig. 1 is the test structure figure of existing test electronics downlink situation；
Fig. 2 is the test structure figure of existing test electronics uplink situation；
Fig. 3 is that the copper metal of a preferred embodiment of the present invention interconnects the Local map of electro-migration testing structure；
Fig. 4 is that the copper metal of a preferred embodiment of the present invention interconnects the overall diagram of electro-migration testing structure；
Fig. 5 is the sectional view of the metal wire of a preferred embodiment of the present invention；
Fig. 6 is the sectional view of the metal wire of a preferred embodiment of the present invention；
Fig. 7 is that the copper metal of a preferred embodiment of the present invention interconnects the overall diagram of electro-migration testing structure；
Fig. 8 is that a kind of copper metal of a preferred embodiment of the present invention interconnects the test method of electro-migration testing structure
Flow chart；
Specifically reference numeral is：
1 metal wire；2 upper metal layers；3 lower metal layers；4 upper metal layers connect through-hole；The connection of 5 lower metal layers is logical
Hole；6 connecting lines；7 metallic plates；11 the oneth low-k material layers；12 silicon-carbon nitrogen layers；13 copper metal layers；14 barrier layers；15 second
Low-k material layers；61 connecting lines one；62 connecting lines two；71 metallic plates one；72 metallic plates two；73 metallic plates three；74 metallic plates
Four；75 metallic plates five；76 metallic plates six；77 metallic plates seven；78 metallic plates eight.
Specific implementation mode
The present invention provides a kind of copper metal interconnection electro-migration testing structure and its test methods.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
As shown in Figure 3 and Figure 4, a kind of copper metal interconnects electro-migration testing structure, including
One metal wire 1 is horizontally disposed with；
Multiple upper metal layers 2, spaced horizontal are set to the upper layer of the metal wire 1；
Multiple lower metal layers 3, spaced horizontal are set to the lower layer of the metal wire 1；
Multiple upper metal layers connect through-holes 4, distinguish single vertical to the connection upper metal layers 2 and metal wire 1；
Multiple lower metal layers connect through-holes 5, distinguish single vertical to the connection lower metal layer 3 and metal wire 1；
Multiple connecting lines 6, difference one end connect the upper metal layers 2 or lower metal layer 3；
The other end that at least two metallic plates 7 are connected to same connecting line 6 is respectively set in multiple metallic plates 7.
Preferably, the upper metal layers 2 are horizontally placed on the surface parallel position of metal wire 1；Preferably, under described
Layer metal layer 3 is horizontally placed on the underface parallel position of metal wire 1；It is furthermore preferred that upper metal layers 2 and lower metal layer 3
It is symmetrical arranged relative to metal wire 1；
The upper table of the lower surface and metal wire 1 of the vertical connection upper metal layers 2 of upper metal layers connection through-hole 4
Face；The lower surface of the upper surface and metal wire 1 of the vertical connection lower metal layer 3 of lower metal layer connection through-hole 5；More
Preferably, the upper metal layers connection through-hole 4 connects 5 opposing metallic line 1 of through-hole with lower metal layer and is symmetrical arranged；
The connecting line 6 connects the upper metal layers 2 and multiple metallic plates 7；Connecting line 6 connects the lower metal layer
3 with multiple metallic plates 7；It is multiple in order to carry out that multiple metallic plates 7 are set in each upper metal layers 2 or lower metal layer 3
Test；
Further, in a kind of preferred embodiment, 2 same level face of the upper metal layers is arranged two, to each other
The center line of the metal wire 1 is symmetrical arranged relatively.The upper metal layers 2 are symmetrical arranged two, the upper metal layers connection
Through-hole 4 is symmetrical arranged also relative to the center line of metal wire 1；Preferably, the upper metal layers connection through-hole 4 is not attached to metal
At the endpoint of line 1, there is certain distance in junction at the endpoint apart from metal wire 1；It is furthermore preferred that the upper metal layers connection is logical
It is connect at hole 4 and the side endpoint of upper metal layers 2；It is more advantageous to test metal wire upper end in this way and opens via process for metal
The extent of the destruction of line 1.
Further, in a kind of preferred embodiment, 3 same level face of the lower metal layer is arranged two, each other
Between the center line of the metal wire 1 relatively be symmetrical arranged.The lower metal layer 3 is symmetrical arranged two, and the lower metal layer connects
The center line that hole 5 is connected also relative to metal wire 1 is symmetrical arranged；Preferably, the lower metal layer connection through-hole 5 is not attached to gold
At the endpoint for belonging to line 1, there is certain distance in junction at the endpoint apart from metal wire 1；It is furthermore preferred that the lower metal layer connection
It is connect at through-hole 5 and the side endpoint of lower metal layer 3；It is more advantageous to test metal wire upper end in this way and opens via process for gold
Belong to the extent of the destruction of line 1.
Further, in a kind of preferred embodiment, the metallic plate 7 is arranged side by side more on same connecting line 6
It is a.Preferably, multiple metallic plates 7 are connected in series on same connecting line 6.Connect multiple metallic plates 7 purpose be in order to
It is used when facilitating retest.
Further, in a kind of preferred embodiment, the metal wire 1 is set as copper double damask structure.
As shown in Figure 5 and Figure 6, in a kind of preferred embodiment, the metal wire 1 is disposed with first from top to bottom
Low-k material layers 11, silicon-carbon nitrogen layer 12, copper metal layer 13, barrier layer 14, the 2nd low-k material layers 15.
Further, in a kind of preferred embodiment, the barrier layer 14 is tantalum and tantalum nitride material (Ta/TaN).
Further, in a kind of preferred embodiment, the copper metal layer 13 is arranged on barrier layer 14 and silicon-carbon nitrogen
In cavity made of layer 12 encloses.
Further, in a kind of preferred embodiment, the barrier layer 14 is arranged in 15 He of the 2nd low-k material layers
In cavity made of silicon-carbon nitrogen layer 12 encloses.
The first low-k material layers 11 and silicon-carbon nitrogen layer 12 are horizontal direction interface；First low-k material layers 11
In on silicon-carbon nitrogen layer 12, silicon-carbon nitrogen layer 12 has enclosed the cavity on four sides as top surface and the 2nd ow-k material layers 15,
In three articles of sides be the 2nd low-k material layers 15；The medial surface for being bonded the 2nd low-k material layers 15 forms barrier layer 14, resistance
The upper surface of barrier 14 connects to forming inner cavity with 12 lower surface of silicon-carbon nitrogen layer, and interior intracavitary is made of copper metal layer 13.
As shown in Figure 7 and Figure 8, the present invention also provides a kind of tests interconnecting electro-migration testing structure using above-mentioned copper metal
Method includes the following steps：
S1 selects same group of same material and multiple copper metals of setting to interconnect electro-migration testing structure as test sample；
The multiple copper metal interconnection electro-migration testing structure will be consistent in structure and material, keep follow-up test data more accurate
Really；
S2 selects two different connecting lines 1 and connecting line of one of copper metal interconnection electro-migration testing structure
2 62；
Metallic plate 1 and metallic plate 2 72 series connection being arranged on S3 connecting lines 1；The metal being arranged on connecting line 2 62
Plate 3 73 and metallic plate 4 74 are connected；This step be copper metal interconnect electro-migration testing structure script connection structure, be herein for
Illustrate its connection relation；
Metallic plates four of the S4 in the metallic plate 2 72 and the more distal end relatively of connecting line 2 62 of the more distal end relatively of connecting line 1
Add current stress between 74；Add electric current between connecting line 1 and connecting line 2 62, makes metallic plate 2 72 and metallic plate 4 74
Between have current flowing；
S5 is in the opposite metallic plate three closer to end of the opposite metallic plate 1 and connecting line 2 62 closer to end of connecting line 1
Both end voltage is measured between 73；Voltage value is detected between metallic plate 1 and metallic plate 3 73, to estimate metallic plate 1
Voltage value between metallic plate 3 73；
S6 calculates the resistance value of metal wire 1 according to electric current and voltage；Since value of the current value in entire circuit is opposite
It is stable, therefore can be obtained according to the current value between metallic plate 2 72 and metallic plate 4 74 flowing through metallic plate 1 and metal
Current value between plate 3 73, then calculate with the voltage value between metallic plate 1 and metallic plate 3 73 resistance value of metal wire 1；
S7 continues record current and voltage, and calculates change in resistance in real time, after reaching 10% resistance shift, record electricity
Migrate the out-of-service time；The record electromigration invalidation time herein refers to the resistance shift time for recording 10%；
S8 calculates the activation energy factor according to the electromigration invalidation time；
S9 goes out the operational failure time of sample according to Bu Lake equation calculations；
S10 organizes this testing procedure that all copper metals interconnect the test sample progress S2-S9 of electro-migration testing structure；
S11 takes logarithm normal distribution to the operational failure time of all test samples, extrapolates accumulative failure and is
When 0.1%, the service life of the metal wire 1 under operating condition；
Connecting line 6 that S12 selects another pair different and the testing procedure that all samples are carried out with S10-S11；
S13 is according to the test data in the service life of the metal wire 1 of obtained all multiple and different current paths, to institute
The deelectric transferred performance for stating metal wire 1 is assessed.
The present invention copper metal interconnection electro-migration testing structure test method be specially：
Such as figure, for the basic test schematic diagram of the metal wire of the present invention, all metal layers use the double damascenes of advanced copper
The metal width of leather technique, metal wire is 0.04um, metal line-width 200um.Metallic plate 2 72, metallic plate 6 76, metal
Plate 4 74, metallic plate 8 78 power up current density stress (stress), metallic plate 1, metallic plate 5 75, metallic plate 3 73, metal
Plate 7 77 is used for measuring resistance.According to the path of electric current, it is roughly divided into four parts：2 72 → metallic plate of metallic plate 6 76, metal
8 78 → metallic plate of plate 6 76,2 72 → metallic plate of metallic plate 4 74,8 78 → metallic plate of metallic plate 4 74；
By taking 8 78 → metallic plate of metallic plate, 6 76 current path as an example, metallic plate 6 76 is answered with metallic plate 8 78 plus electric current
Power measures both end voltage between metallic plate 5 75 and metallic plate 7 77；
Per group's 15 sample capacities of test condition (sample size), in same 300 DEG C of (stress) temperature of test,
(eg under different current density stress (stress)：2.22MA/cm2, 3.46MA/cm2, 5.43MA/cm2) measure tested metal
The resistance value of line metal wire 1；After the resistance shift (Rshift) 10% for reaching certain resistance variations, electromigration is recorded respectively and is lost
Imitate time Ta, Tb, Tc；Calculating activation energy factor Ea, (i.e. each acceleration environment takes logarithm normal distribution, asks corresponding T50 (i.e. flat
The equal out-of-service time, then the figure of ln (T50) and current density lnJ is drawn, it is n) to seek slope slope；
Per group's 15 sample capacities of test condition (sample size), in same current density stress (3.21MA/
cm2), add different tests (stress) temperature (275 DEG C, 300 DEG C, 325 DEG C), measures by being tested metal wire metal wire 1
Resistance value after reaching certain Rshift 10%, reads time Td, Te, the Tf for being tested metal wire failure, calculates this respectively
Activation energy accelerated factor under current density；
(above-mentioned current density accelerated factor and activation energy factor Ea's collects, and Ea is collected once)
According to black equation (Bu Lake equations)：Time to failue (TTF)=A*j^(-n)*exp(Ea/
KT), wherein J, T are respectively current density and temperature under the stress condition, and A is constant, and n, Ea are current density accelerated factor
With the activation energy factor.By the service life under sample acceleration environment, derives to the Jop and Top under operating condition, calculate all samples
The operational failure time, then take logarithm normal distribution (lognormal), the service life (lifetime) corresponding to 15 samples taken
Logarithm is that abscissa and cumulative distribution crash rate are ordinate, when to extrapolate accumulative failure be 0.1%, operating condition
Service life under (Top, Jop are the temperature and current density under normal running conditions).After obtaining the parameter of Ea and n, by with
Lower formula can calculate the service life (lifetime) that normal work uses:
Lifetime=T0.1 × AFT × AFJ
Wherein AFT is Temperature Accelerating Factor in Life Test, and AFJ is electric current accelerated factor, and T0.1 is one group of sample accumulative failure 0.1%
Out-of-service time.It is respective calculation formula below：
AFT=exp [Ea/ (1/kTop-1/kTstr)]
AFJ=(Jstr/Jop)n
T0.1=(Normsinv (0.1%)-intercept)/slope
Intercept refers to the intercept of logarithm normal distribution under normal running conditions, and slope refers to the slope of logarithm normal distribution
Wherein Jstr, Tstr are the current density and temperature under the conditions of accelerated test；Electricity when Jop, Top are normal work
Current density and temperature.The test method is the standard method of test of the JEDEC63 of JEDEC international standards.
And so on, the service life of the tested metal wire under four different current paths of tested metal wire can be obtained
(lifetime), the deelectric transferred performance of metal wire 1 is assessed.
If acquired results are less than 10 years, illustrate that 1 structure of surveyed metal wire is easy to that the diffusion of copper occurs, to cause to lose
Effect.By carrying out failure Physical Property Analysis to test structure, see whether be due to upper layer hole hole opening technology (upper via open
Process the quick diffusion of copper atom caused by).If so, it can be by regulating and controlling barrier layer tantalum and tantalum nitride (barrier
Ta/TaN thickness) prevents the diffusion of copper atom while to realize chip good performance.
In the description of this specification, reference term " preferred embodiment ", " some embodiments ", " embodiment ",
The description of " specific embodiment " or " some examples " etc. means specific features described in conjunction with this embodiment or example, structure, material
Material or feature are included at least one embodiment or example of the invention.In the present specification, to the signal of above-mentioned term
Property statement may not refer to the same embodiment or example.Moreover, particular features, structures, materials, or characteristics described can
Can be combined in any suitable manner in any one or more of the embodiments or examples.
Specific embodiments of the present invention are described in detail above, but it is intended only as example, the present invention is simultaneously unlimited
It is formed on particular embodiments described above.To those skilled in the art, it is any to the equivalent modifications that carry out of the present invention and
It substitutes also all among scope of the invention.Therefore, without departing from the spirit and scope of the invention made by impartial conversion and
Modification, all should be contained within the scope of the invention.
Claims (10)
1. a kind of copper metal interconnects electro-migration testing structure, it is characterised in that：Including
One metal wire is horizontally disposed with, including；
Multiple upper metal layers are horizontally placed on the upper layer of the metal wire；
Multiple lower metal layers are horizontally placed on the lower layer of the metal wire；
Multiple upper metal layers connect through-hole, are separately connected the upper metal layers and metal wire；
Multiple lower metal layers connect through-hole, are separately connected the lower metal layer and metal wire；
Multiple connecting lines, difference one end connect the upper metal layers or lower metal layer；
The other end that at least two metallic plates are connected to same connecting line is respectively set in multiple metallic plates.
2. copper metal according to claim 1 interconnects electro-migration testing structure, it is characterised in that：The upper metal layers are same
Horizontal plane is arranged two, and the center line of the relatively described metal wire is symmetrical arranged to each other.
3. copper metal according to claim 2 interconnects electro-migration testing structure, it is characterised in that：The lower metal layer is same
Horizontal plane is arranged two, and the center line of the relatively described metal wire is symmetrical arranged to each other.
4. copper metal according to claim 3 interconnects electro-migration testing structure, it is characterised in that：The metallic plate is same
It is arranged side by side on connecting line multiple.
5. copper metal according to claim 4 interconnects electro-migration testing structure, it is characterised in that：The metal wire is set as
Copper double damask structure.
6. copper metal according to claim 5 interconnects electro-migration testing structure, it is characterised in that：The metal wire on to
Under be disposed with the first low-k material layers, silicon-carbon nitrogen layer, copper metal layer, barrier layer, the 2nd low-k material layers.
7. copper metal according to claim 6 interconnects electro-migration testing structure, it is characterised in that：The barrier layer be tantalum with
Tantalum nitride material.
8. copper metal according to claim 7 interconnects electro-migration testing structure, it is characterised in that：The copper metal layer setting
In cavity made of being enclosed on barrier layer and silicon-carbon nitrogen layer.
9. copper metal according to claim 8 interconnects electro-migration testing structure, it is characterised in that：The barrier layer setting exists
In cavity made of 2nd low-k material layers and silicon-carbon nitrogen layer enclose.
10. a kind of test method interconnecting electro-migration testing structure using any one of the claim 1-9 copper metals, feature
It is：Include the following steps：
S1 selects same group of same material and multiple copper metals of setting to interconnect electro-migration testing structure as test sample；
S2 selects two different connecting lines one and connecting line two of one of copper metal interconnection electro-migration testing structure；
Metallic plate one and metallic plate two series connection being arranged on S3 connecting lines one；The metallic plate three and metallic plate being arranged on connecting line two
Four series connection；
S4 adds electric current between the metallic plate two and the metallic plate four at the relatively farther end of connecting line two of the more distal end relatively of connecting line one
Stress；
S5 measures two closer between the metallic plate three at end relatively in the opposite metallic plate one and connecting line two closer to end of connecting line one
Terminal voltage；
S6 calculates metal wire resistance value according to electric current and voltage；
S7 continues record current and voltage, and calculates change in resistance in real time, after reaching 10% resistance shift, records electromigration
Out-of-service time；
S8 calculates the activation energy factor according to the electromigration invalidation time；
S9 goes out the operational failure time of sample according to Bu Lake equation calculations；
S10 organizes this testing procedure that all copper metals interconnect the test sample progress S2-S9 of electro-migration testing structure；
S11 takes logarithm normal distribution to the operational failure time of all test samples, and it is 0.1% to extrapolate accumulative failure
When, the service life of the metal wire under operating condition；
Connecting line that S12 selects another pair different and the testing procedure that all samples are carried out with S10-S11；
S13 is according to the test data in the service life of the metal wire of obtained all multiple and different current paths, to the gold
The deelectric transferred performance for belonging to line is assessed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810316625.7A CN108573890B (en) | 2018-04-10 | 2018-04-10 | Copper metal interconnection electromigration test structure and test method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810316625.7A CN108573890B (en) | 2018-04-10 | 2018-04-10 | Copper metal interconnection electromigration test structure and test method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN108573890A true CN108573890A (en) | 2018-09-25 |
| CN108573890B CN108573890B (en) | 2021-07-27 |
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| US11860217B2 (en) | 2020-04-03 | 2024-01-02 | Changxin Memory Technologies, Inc. | Test circuits and semiconductor test methods |
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