CN108573890B - Copper metal interconnection electromigration test structure and test method thereof - Google Patents
Copper metal interconnection electromigration test structure and test method thereof Download PDFInfo
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- CN108573890B CN108573890B CN201810316625.7A CN201810316625A CN108573890B CN 108573890 B CN108573890 B CN 108573890B CN 201810316625 A CN201810316625 A CN 201810316625A CN 108573890 B CN108573890 B CN 108573890B
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- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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Abstract
The invention discloses a copper metal interconnection electromigration test structure, which comprises a metal wire, a test circuit and a test circuit, wherein the metal wire is horizontally arranged and comprises a metal wire; a plurality of upper metal layers horizontally arranged on the upper layers of the metal wires; a plurality of lower metal layers horizontally arranged at the lower layer of the metal wire; the upper metal layer connecting through holes are respectively connected with the upper metal layer and the metal wire; the lower metal layer connecting through holes are respectively connected with the lower metal layer and the metal wire; a plurality of connecting wires, one end of each connecting wire is connected with the upper metal layer or the lower metal layer; a plurality of metal plates. A test method of the copper metal interconnection electromigration test structure is also disclosed. According to the test result of the copper metal interconnection electromigration test structure, the test structure which is more in line with the process procedure is designed, and the influence of the process of opening the through hole at the upper end of the metal wire on the rear-section metal interconnection structure is well monitored, so that the barrier layer or the rear-section copper metal interconnection process is improved, and the risk of mass production of products is reduced.
Description
Technical Field
The invention relates to a semiconductor copper metal layer test structure, in particular to a copper metal interconnection electromigration test structure and a test method thereof.
Background
With the development of technology nodes, electromigration has become an important reliability concern for metal interconnects in integrated circuits, and in typical electromigration evaluation, there are two structures, including a test electronics downstream case (downstream) as in fig. 1 and a test electronics upstream case (upstream) as in fig. 2, to evaluate the failure mode and lifetime prediction of the metal lines or vias (via) for electromigration. From the viewpoint of electromigration failure, a void (trench void) and a via void (via void) on a metal line to be tested generally occur in a test structure for testing an electronic uplink (upstream); in the test structure for the downstream test, via bottom holes (void) and voids (trench voids) in the metal lines under test are generally formed, and almost all the voids (voids) are rarely formed in the anode.
But as technology nodes evolve, it is not known whether Electromigration (EM) failures remain consistent with before. As dimensions decrease, thinner barrier layers (barriers) and better copper (Cu) fill reduce the resistance of the circuit, thereby improving the performance of the circuit. However, the thinning of the barrier layer (barrier) causes a higher electromigration risk and also causes a difference in the failure mechanism of the test structure for the down-stream (downstream) and up-stream (upstream) test electronics. As shown in fig. 6, the Upper via opening process (Upper via opening process) uses a wet chemical reagent to cause a certain damage (damage) to the interface (Cu/barrier interface) between the Cu and the barrier layer, so that Cu atoms at the edge of the metal line are more likely to diffuse under the action of electron wind, and the test structure of the EM is more likely to be damaged, which is also consistent with the process. Therefore, the commonly used EM upstream structure has certain limitations.
Disclosure of Invention
The invention provides a copper metal interconnection electromigration test structure and a test method thereof, which can more accurately estimate the actual service life of a metal wire for solving the problems in the prior art.
The invention provides a copper metal interconnection electromigration test structure.
In order to achieve the purpose, the invention adopts the following technical scheme:
a copper metal interconnection electromigration test structure comprises
A metal wire, horizontally disposed, including;
a plurality of upper metal layers horizontally arranged on the upper layers of the metal wires;
a plurality of lower metal layers horizontally arranged at the lower layer of the metal wire;
the upper metal layer connecting through holes are respectively connected with the upper metal layer and the metal wire;
the lower metal layer connecting through holes are respectively connected with the lower metal layer and the metal wire;
a plurality of connecting wires, one end of each connecting wire is connected with the upper metal layer or the lower metal layer;
and the metal plates are respectively provided with at least two metal plates which are connected with the other end of the same connecting wire.
In order to further optimize the technical scheme, the technical measures adopted by the invention are as follows:
preferably, the two upper metal layers are arranged on the same horizontal plane and are symmetrically arranged relative to the midline of the metal wire.
More preferably, the two lower metal layers are arranged on the same horizontal plane and are symmetrically arranged relative to the midline of the metal wire.
More preferably, a plurality of the metal plates are arranged side by side on the same connecting line.
More preferably, the metal wire is arranged in a copper dual damascene structure.
More preferably, the metal line is sequentially provided with a first low-k material layer, a silicon carbon nitrogen layer, a copper metal layer, a barrier layer and a second low-k material layer from top to bottom.
More preferably, the barrier layer is made of tantalum and tantalum nitride.
More preferably, the copper metal layer is arranged in a cavity formed by enclosing the barrier layer and the silicon carbon nitrogen layer.
More preferably, the barrier layer is disposed in a cavity surrounded by the second low-k material layer and the silicon carbon nitrogen layer.
The invention further provides a test method of the copper metal interconnection electromigration test structure.
In order to achieve the purpose, the invention adopts the following technical scheme:
a test method of copper metal interconnection electromigration test structure comprises the following steps:
s1, selecting a plurality of copper metal interconnection electromigration test structures with the same group and the same material and arrangement as test samples;
s2 selecting two different connecting lines I and II of one copper metal interconnection electromigration test structure;
s3, connecting the first metal plate and the second metal plate which are arranged on the first connecting wire in series; the metal plate III and the metal plate IV which are arranged on the connecting wire II are connected in series;
s4 applying current stress between the second metal plate and the fourth metal plate at the far ends of the first connecting wire and the second connecting wire;
s5, measuring the voltage at two ends between the first metal plate and the third metal plate which are relatively more near ends of the first connecting wire and the second connecting wire;
s6, calculating the resistance value of the metal wire according to the current and the voltage;
s7, continuously recording current and voltage, calculating resistance change in real time, and recording electromigration failure time after the resistance deviation reaches 10%;
s8 calculating an activation energy factor according to the electromigration failure time;
s9, calculating the working failure time of the sample according to the Brack equation;
s10, carrying out testing steps S2-S9 on all test samples of the copper metal interconnection electromigration test structure in the group;
s11, lognormal distribution is carried out on the working failure time of all the test samples, and the service life of the metal wire under the working condition is calculated when the cumulative failure rate is 0.1%;
s12 selecting another pair of different connecting lines and performing the testing steps S10-S11 for all samples;
s13, according to the obtained test data of the service life of the metal wire of all the plurality of different current paths, the electromigration resistance of the metal wire is evaluated.
By adopting the technical scheme, compared with the prior art, the invention has the following technical effects:
according to the test result of the copper metal interconnection electromigration test structure, the test structure which is more in line with the process is designed, and the influence of an upper through hole opening process (upper via open process) on the metal wire on the rear-stage metal interconnection structure is well monitored, so that the barrier layer (barrier) or the rear-stage copper (Cu) metal interconnection process is improved, and the risk of mass production of products is reduced. The design of the test structure can simulate the circuit structure more truly and can better monitor the influence of the process procedure on the service life of the back-end metal interconnection structure, thereby finding the problems in the process procedure earlier and achieving the aim of improving the process in time.
According to the invention, from the point of a new failure mechanism of electromigration, for a rapid diffusion path formed by copper (Cu) atoms under the action of electron wind caused by damage (damage) to the interface between copper and a Barrier layer (Cu/Barrier) caused by a process of forming a through hole at the upper end of a metal wire (via growing on metal edge) to the process of dropping the through hole at the edge of the metal wire, the process is effectively monitored, and the problems of electromigration easily caused by over-thin Barrier layer (Barrier) in the process and high resistance of a back-end circuit of the whole chip and performance reduction of the chip caused by over-thick Barrier layer (Barrier) are effectively improved.
In addition, the influence factors of further reduction of the size on the failure time of the whole metal wire are increased, and in the original test structure, such as a test method only for testing the electronic downlink condition (downlink) or the electronic uplink condition (uplink), only part of conditions can be analyzed, so that the test result of the whole metal wire cannot be obtained more accurately on the whole. And after the parameters of the metal wire are further reduced, other influence factors exist, under the existing experimental conditions, an ideal metal wire is difficult to obtain due to the limitation of the process, and the service life of the whole metal wire cannot be accurately obtained by the existing testing means, so that the actual metal wire needs to be tested.
Drawings
FIG. 1 is a diagram of a conventional test architecture for testing electronic downlink conditions;
FIG. 2 is a diagram of a conventional test architecture for testing an electronic uplink situation;
FIG. 3 is a partial diagram of a copper metal interconnect electromigration test structure in accordance with a preferred embodiment of the present invention;
FIG. 4 is a general diagram of a copper metal interconnect electromigration test structure in accordance with a preferred embodiment of the present invention;
FIG. 5 is a cross-sectional view of a wire in accordance with a preferred embodiment of the present invention;
FIG. 6 is a cross-sectional view of a wire in accordance with a preferred embodiment of the present invention;
FIG. 7 is an overall view of a copper metal interconnect electromigration test structure in accordance with a preferred embodiment of the present invention;
FIG. 8 is a flowchart of a method for testing a copper metal interconnect electromigration test structure in accordance with a preferred embodiment of the present invention;
the specific reference numerals are:
1 a metal wire; 2 an upper metal layer; 3 a lower metal layer; 4, connecting the upper metal layer with the through hole; 5 connecting the lower metal layer with the through hole; 6 connecting wires; 7 a metal plate; 11 a first low-k material layer; a 12 silicon carbon nitrogen layer; 13 a copper metal layer; 14 a barrier layer; 15 a second layer of low-k material; 61 connecting a first wire; 62, connecting a second wire; 71 a first metal plate; 72 a second metal plate; 73 a third metal plate; 74 a metal plate four; 75 a metal plate five; 76 metal plate six; 77 metal sheet seven; 78 metal plate eight.
Detailed Description
The invention provides a copper metal interconnection electromigration test structure and a test method thereof.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
As shown in FIGS. 3 and 4, a copper metal interconnection electromigration test structure comprises
A metal wire 1 horizontally arranged;
a plurality of upper metal layers 2 horizontally arranged on the upper layer of the metal wire 1 at intervals;
a plurality of lower metal layers 3 horizontally arranged at intervals on the lower layer of the metal line 1;
the upper metal layers are connected with the through holes 4 and are respectively and vertically connected with the upper metal layers 2 and the metal wires 1;
the lower metal layer connecting through holes 5 are respectively connected with the lower metal layer 3 and the metal wire 1 in a single vertical direction;
a plurality of connecting wires 6, one end of each of which is connected to the upper metal layer 2 or the lower metal layer 3;
and a plurality of metal plates 7, at least two of which are respectively arranged, and the metal plates 7 are connected to the other end of the same connecting wire 6.
Preferably, the upper metal layer 2 is horizontally arranged at a parallel position right above the metal wire 1; preferably, the lower metal layer 3 is horizontally arranged at a parallel position right below the metal wire 1; more preferably, the upper metal layer 2 and the lower metal layer 3 are symmetrically disposed with respect to the metal line 1;
the upper metal layer is connected with the lower surface of the upper metal layer 2 and the upper surface of the metal wire 1 in the vertical direction of the through hole 4; the lower metal layer connecting through hole 5 is vertically connected with the upper surface of the lower metal layer 3 and the lower surface of the metal wire 1; more preferably, the upper metal layer connecting through hole 4 and the lower metal layer connecting through hole 5 are symmetrically arranged relative to the metal wire 1;
the connecting wires 6 connect the upper metal layer 2 and the plurality of metal plates 7; the connecting wire 6 connects the lower metal layer 3 and the plurality of metal plates 7; a plurality of metal plates 7 are arranged on each upper metal layer 2 or lower metal layer 3 so as to facilitate a plurality of tests;
further, in a preferred embodiment, two upper metal layers 2 are disposed on the same horizontal plane, and are symmetrically disposed with respect to the center line of the metal line 1. The two upper metal layers 2 are symmetrically arranged, and the upper metal layer connecting through holes 4 are also symmetrically arranged relative to the central line of the metal wire 1; preferably, the upper-layer metal layer connecting through hole 4 is not connected to the end point of the metal wire 1, and the connection position has a certain distance from the end point of the metal wire 1; more preferably, the upper metal layer is connected with the through hole 4 and is connected with one side end point of the upper metal layer 2; this is more favorable to the degree of damage of the process of opening the through hole on the upper end of the metal wire to the metal wire 1.
Still further, in a preferred embodiment, two lower metal layers 3 are disposed on the same horizontal plane, and are symmetrically disposed with respect to the central line of the metal line 1. The two lower metal layers 3 are symmetrically arranged, and the lower metal layer connecting through holes 5 are also symmetrically arranged relative to the central line of the metal wire 1; preferably, the lower metal layer connecting through hole 5 is not connected to the end point of the metal wire 1, and the connection position is a certain distance away from the end point of the metal wire 1; more preferably, the lower metal layer connecting through hole 5 is connected with one side end point of the lower metal layer 3; this is more favorable to the degree of damage of the process of opening the through hole on the upper end of the metal wire to the metal wire 1.
Furthermore, in a preferred embodiment, a plurality of said metal plates 7 are arranged side by side on the same connecting line 6. Preferably, a plurality of the metal plates 7 are connected in series to the same connecting line 6. The purpose of connecting a plurality of metal plates 7 in series is to facilitate use in repeated tests.
Furthermore, in a preferred embodiment, the metal line 1 is configured as a copper dual damascene structure.
In a preferred embodiment, as shown in fig. 5 and 6, the metal line 1 is sequentially provided with a first low-k material layer 11, a silicon carbon nitride layer 12, a copper metal layer 13, a barrier layer 14, and a second low-k material layer 15 from top to bottom.
Further, in a preferred embodiment, the barrier layer 14 is tantalum and tantalum nitride (Ta/TaN).
Further, in a preferred embodiment, the copper metal layer 13 is disposed in a cavity enclosed by the barrier layer 14 and the SiCN layer 12.
Further, in a preferred embodiment, the barrier layer 14 is disposed in a cavity surrounded by the second low-k material layer 15 and the SiCN layer 12.
The first low-k material layer 11 and the silicon carbon nitrogen layer 12 are horizontal interfaces; the first low-k material layer 11 is located on the silicon-carbon-nitrogen layer 12, the silicon-carbon-nitrogen layer 12 and the second ow-k material layer 15 enclose to form a four-sided cavity, and three sides of the cavity are the second low-k material layer 15; a barrier layer 14 is formed by adhering the inner side surface of the second low-k material layer 15, the upper surface of the barrier layer 14 is connected with the lower surface of the silicon-carbon-nitrogen layer 12 to form an inner cavity, and the inner cavity is formed by a copper metal layer 13.
As shown in fig. 7 and 8, the present invention further provides a testing method using the above copper metal interconnection electromigration test structure, which includes the following steps:
s1, selecting a plurality of copper metal interconnection electromigration test structures with the same group and the same material and arrangement as test samples; the structure and the material of the plurality of copper metal interconnection electromigration test structures are kept consistent, so that subsequent test data are more accurate;
s2, selecting two different connecting lines I61 and II 62 of one copper metal interconnection electromigration test structure;
s3 connecting the first metal plate 71 and the second metal plate 72 arranged on the first connecting wire 61 in series; the third metal plate 73 and the fourth metal plate 74 arranged on the second connecting line 62 are connected in series; the step is the original connection structure of the copper metal interconnection electromigration test structure, and the connection relationship is explained here;
s4 applying a current stress between the second metal plate 72 at the relatively farther end of the first connecting wire 61 and the fourth metal plate 74 at the relatively farther end of the second connecting wire 62; applying current between the first connecting wire 61 and the second connecting wire 62 to enable current to flow between the second metal plate 72 and the fourth metal plate 74;
s5 measuring the voltage between the first metal plate 71 at the more proximal end of the first connecting wire 61 and the third metal plate 73 at the more proximal end of the second connecting wire 62; detecting a voltage value between the first metal plate 71 and the third metal plate 73 to estimate a voltage value between the first metal plate 71 and the third metal plate 73;
s6, calculating the resistance value of the metal wire 1 according to the current and the voltage; because the value of the current value in the whole circuit is relatively stable, the current value flowing between the first metal plate 71 and the third metal plate 73 can be obtained according to the current value between the second metal plate 72 and the fourth metal plate 74, and then the resistance value of the metal wire 1 is calculated according to the voltage value between the first metal plate 71 and the third metal plate 73;
s7, continuously recording current and voltage, calculating resistance change in real time, and recording electromigration failure time after the resistance deviation reaches 10%; the term "recording electromigration failure time" as used herein means recording a 10% resistance shift time;
s8 calculating an activation energy factor according to the electromigration failure time;
s9, calculating the working failure time of the sample according to the Brack equation;
s10, carrying out testing steps S2-S9 on all test samples of the copper metal interconnection electromigration test structure in the group;
s11, lognormal distribution is carried out on the working failure time of all the test samples, and the service life of the metal wire 1 under the working condition is calculated when the cumulative failure rate is 0.1%;
s12 selecting another pair of different tie lines 6 and performing the test steps S10-S11 on all samples;
s13, according to the obtained test data of the lifetime of the metal line 1 of all the multiple different current paths, the electromigration resistance of the metal line 1 is evaluated.
The test method of the copper metal interconnection electromigration test structure comprises the following steps:
referring to the figure, which is a schematic diagram of the basic test of the metal line of the present invention, all metal layers use the advanced copper dual damascene process, the metal width of the metal line is 0.04um, and the metal width of the metal line is 200 um. The second metal plate 72, the sixth metal plate 76, the fourth metal plate 74, the eighth metal plate 78 and the stress (stress) are applied with current density, and the first metal plate 71, the fifth metal plate 75, the third metal plate 73 and the seventh metal plate 77 are used for measuring the resistance. According to the current path, the device is roughly divided into four parts: metal plate two 72 → metal plate six 76, metal plate eight 78 → metal plate six 76, metal plate two 72 → metal plate four 74, metal plate eight 78 → metal plate four 74;
taking the current path of metal plate eight 78 → metal plate six 76 as an example, the current stress is applied to metal plate six 76 and metal plate eight 78, and the voltage between two ends is measured between metal plate five 75 and metal plate seven 77;
test conditions of 15 sample volumes (sample size) per panel at 300 ℃ temperature for the same test (stress) and at different current density stresses (stress) (eg: 2.22 MA/cm)2，3.46MA/cm2，5.43MA/cm2) Measuring the resistance value of the metal wire 1 of the tested metal wire; respectively recording electromigration failure time Ta, Tb and Tc after reaching a certain resistance change resistance shift (Rshift) of 10 percent; calculating the activation energy factor Ea (i.e. each acceleration condition takes the lognormal distribution to calculate the correspondingT50 (i.e., average failure time, then plot ln (T50) against current density lnJ, and find slope as n);
test conditions of 15 sample volumes (sample size) per panel, stress at the same current density (3.21 MA/cm)2) Adding different testing (stress) temperatures (275 ℃, 300 ℃, 325 ℃), measuring the resistance value of the metal wire 1 passing through the tested metal wire, respectively reading the failure time Td, Te and Tf of the tested metal wire after reaching a certain Rshift of 10 percent, and calculating the activation energy acceleration factor under the current density;
(the collection of the above-mentioned current density accelerating factor and activation energy factor Ea, Ea can be collected once)
According to black equalisation (braker equation): time To Failure (TTF) ═ A × j ^(-n)Exp (Ea/kT), where J, T is the current density and temperature, respectively, under the stress condition, a is a constant, and n, Ea are the current density acceleration factor and the activation energy factor. The service life under the accelerated condition of the sample is deduced to Jop and Top under the working condition, the working failure time of all samples is calculated, then logarithmic normal distribution (lognormal) is taken, logarithm of the service life (life time) corresponding to 15 samples is taken as an abscissa, the cumulative distribution failure rate is taken as an ordinate, and the service life under the working condition (Top, Jop is temperature and current density under the normal working condition) when the cumulative failure rate is 0.1% is deduced. After the parameters of Ea and n are obtained, the life (lifetime) of normal working can be calculated by the following formula:
Lifetime＝T0.1×AFT×AFJ
where AFT is the temperature acceleration factor, AFJ is the current acceleration factor, and T0.1 is the failure time for a set of samples with a cumulative failure rate of 0.1%. The respective calculation formulas are as follows:
AFT＝exp[Ea/(1/kTop-1/kTstr)]
AFJ＝(Jstr/Jop)n
T0.1＝(Normsinv(0.1％)-intercept)/slope
intercept refers to the Intercept of the log-normal distribution under normal operating conditions, slope refers to the slope of the log-normal distribution
Wherein Jstr, Tstr are current density and temperature under accelerated test conditions; jop, Top is the current density and temperature at normal operation. The test method is a standard test method of JEDEC63 of JEDEC International Standard.
By analogy, the service life (lifetime) of the tested metal wire under four different current paths of the tested metal wire can be obtained, and the electromigration resistance of the metal wire 1 can be evaluated.
If the result is less than 10 years, it indicates that the tested metal wire 1 structure is easy to diffuse copper, thereby causing failure. Failure physical analysis of the test structure was performed to see if the diffusion of copper atoms was rapid due to the upper via opening process (upper via open process). If the thickness of the barrier layer is adjustable, the thickness of the barrier layer tantalum and the thickness of the barrier layer tantalum nitride (barrier Ta/TaN) can be adjusted, so that the good performance of the chip is achieved, and meanwhile, the diffusion of copper atoms is prevented.
In the description herein, reference to the description of the term "one preferred embodiment," "some embodiments," "an embodiment," "a specific embodiment," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (9)
1. A method for testing copper metal interconnection electromigration is characterized in that: the method comprises the following steps:
s1, selecting a plurality of copper metal interconnection electromigration test structures with the same group and the same material and arrangement as test samples;
s2 selecting two different connecting lines I and II of one copper metal interconnection electromigration test structure;
s3, connecting the first metal plate and the second metal plate which are arranged on the first connecting wire in series; the metal plate III and the metal plate IV which are arranged on the connecting wire II are connected in series;
s4 applying current stress between the second metal plate and the fourth metal plate;
s5, measuring the voltage between the first metal plate at the more near end of the first connecting wire and the third metal plate at the more near end of the second connecting wire;
s6, calculating the resistance value of the metal wire according to the current and the voltage;
s7, continuously recording current and voltage, calculating resistance change in real time, and recording electromigration failure time after the resistance deviation reaches 10%;
s8 calculating an activation energy factor according to the electromigration failure time;
s9, calculating the working failure time of the sample according to the Brack equation;
s10, carrying out testing steps S2-S9 on all test samples of the copper metal interconnection electromigration test structure in the group;
s11, lognormal distribution is carried out on the working failure time of all the test samples, and the service life of the metal wire under the working condition is calculated when the cumulative failure rate is 0.1%;
s12 selecting another pair of different connecting lines and performing the testing steps S10-S11 for all samples;
s13, according to the obtained test data of the service life of the metal wire of all the multiple different current paths, the electromigration resistance of the metal wire is evaluated;
the copper metal interconnection electromigration test structure comprises
The metal wire is horizontally arranged and comprises;
a plurality of upper metal layers horizontally arranged on the upper layers of the metal wires;
a plurality of lower metal layers horizontally arranged at the lower layer of the metal wire;
the upper metal layer connecting through holes are respectively connected with the upper metal layer and the metal wire;
the lower metal layer connecting through holes are respectively connected with the lower metal layer and the metal wire;
a plurality of connecting wires, one end of each connecting wire is connected with the upper metal layer or the lower metal layer;
and the metal plates are respectively provided with at least two metal plates which are connected with the other end of the same connecting wire.
2. The method for testing electromigration of copper metal interconnects as set forth in claim 1, further comprising: the two upper metal layers are arranged on the same horizontal plane and symmetrically arranged relative to the central line of the metal wire.
3. The method for testing electromigration of copper metal interconnects as set forth in claim 2, further comprising: the two lower metal layers are arranged on the same horizontal plane and symmetrically arranged relative to the central line of the metal wire.
4. The method for testing electromigration of copper metal interconnects as set forth in claim 3, further comprising: the metal plates are arranged on the same connecting line side by side.
5. The method for testing electromigration of copper metal interconnects as set forth in claim 4, further comprising: the metal wire is set to be a copper dual damascene structure.
6. The method for testing electromigration of copper metal interconnects as set forth in claim 5, further comprising: the metal wire is sequentially provided with a first low-k material layer, a silicon carbon nitrogen layer, a copper metal layer, a barrier layer and a second low-k material layer from top to bottom.
7. The method for testing electromigration of copper metal interconnects as set forth in claim 6, further comprising: the barrier layer is made of tantalum and tantalum nitride.
8. The method for testing electromigration of copper metal interconnects as set forth in claim 7, further comprising: the copper metal layer is arranged in a cavity formed by enclosing the barrier layer and the silicon carbon nitrogen layer.
9. The method for testing electromigration of copper metal interconnects as set forth in claim 8, further comprising: the barrier layer is arranged in a cavity formed by the second low-k material layer and the silicon carbon nitrogen layer in a surrounding mode.
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| CN110071053A (en) * | 2019-04-29 | 2019-07-30 | 上海华力微电子有限公司 | A kind of electro-migration testing structure |
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