CN112864131B - Electromigration test structure and electromigration test method - Google Patents
Electromigration test structure and electromigration test method Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Abstract
The invention provides an electromigration test structure and an electromigration test method, wherein the electromigration test structure comprises the following components: a metal interconnection structure to be tested; the first sensing electrode is electrically connected with one end of the metal interconnection structure to be tested; the second sensing electrode is electrically connected with the other end of the metal interconnection structure to be tested; at least one third sensing electrode electrically connected with at least the position between the two ends of the metal interconnection structure to be tested; the first loading electrode is electrically connected with the first sensing electrode; and the second loading electrode is electrically connected with the second sensing electrode. The technical scheme of the invention can avoid influencing the wiring design of the chip area, and can carry out wafer-level rapid test and rapidly judge the specific position of electromigration failure.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit fabrication, and more particularly, to an electromigration test structure and an electromigration test method.
Background
In recent years, as the size of a semiconductor device is smaller and the integration level is higher, research on the reliability of the semiconductor device is also becoming more important, and an Electro-Migration (EM) phenomenon is one of main failure mechanisms affecting the reliability. The electromigration phenomenon refers to a phenomenon that a current passes through the inside of a metal interconnection line when an integrated circuit in a semiconductor device works, and metal ions generate substance transportation under the action of the current, namely, the metal ions move from a negative electrode to a positive electrode under the pushing of 'electronic wind', so that a cavity (Void) can appear at the negative electrode part of the metal interconnection line due to the electromigration phenomenon, further, circuit breaking occurs, and Hillock (Hillock) appears at the positive electrode part due to the electromigration phenomenon, further, circuit short circuit is caused.
Electromigration testing is the monitoring of the resistance of an electromigration test structure over time at high temperatures and high currents. In the prior art, a Kelvin four-wire resistance method (Kelvin four-terminal sensing method) is generally adopted in the electromigration test, and the electromigration test structure comprises two loading electrodes and two sensing electrodes. Taking the electromigration test structure shown in fig. 1a to 1b as an example, the electromigration test structure comprises a metal interconnection structure to be tested, a connecting metal wire 13 and a plurality of bonding pads which are electrically connected with each other, wherein the metal interconnection structure to be tested comprises a metal layer 11 to be tested and conductive plugs 12 to be tested positioned at two ends of the metal layer 11 to be tested, and each conductive plug 12 to be tested is electrically connected with one end of the connecting metal wire 13 respectively; the plurality of pads includes the first loading electrode F11, the first sensing electrode S11, the second loading electrode F21, the second sensing electrode S21, the first pad 14 and the second pad 15, and may include other pads not shown. During testing, a test current is applied to the metal interconnection structure to be tested through the first loading electrode F11 or the second loading electrode F21, the metal interconnection structure to be tested is controlled to generate high temperature through the test current so as to accelerate the electromigration degradation phenomenon, and after a preset test time, whether the electromigration failure occurs in the metal interconnection structure to be tested is determined by measuring whether the change value of the resistance between the first sensing electrode S11 and the second sensing electrode S21 before and after the test exceeds a failure value.
Because the dicing street area A1 contains a plurality of bonding pads, a probe card matched with the layout of the plurality of bonding pads can be adopted to test the device at wafer level during electromigration test; however, since the metal layer 11 to be tested, the conductive plugs 12 to be tested and part of the connecting metal lines 13 are located in the chip area, and the other part of the connecting metal lines 13 and the plurality of bonding pads are located in the scribe line area A1, the electromigration test structures shown in fig. 1a and 1b occupy the area of the chip area, and affect the wiring design of the chip area, and further affect the performance of the chip.
Especially, due to the consideration of cost, the width of the dicing street area is continuously reduced (for example, from 90 μm to 45 μm), so that the electromigration test structure occupies more area of the chip area, and the wiring design of the chip area is affected, thereby affecting the performance of the device; if the electromigration test structure is to be fully compressed to the scribe line region, the area of the chip region is not occupied, and then some of the pads (e.g., the first pad 14 and the second pad 15) in the scribe line region A1 need to be removed, which results in that the wafer-level rapid test cannot be performed by using the probe card (because the rigid material of the structure below the removed pads damages the probes on the probe card), the package-level test can only be performed, which results in additional packaging cost and increased cycle time (production period); in addition, the conventional electromigration test structure can only obtain the change condition of the total resistance value of the whole metal interconnection structure to be tested before and after the test, the specific position of failure on the metal interconnection structure to be tested cannot be directly judged through the electrical test, the electromigration failure position can only be confirmed through multiple slice analysis, and the efficiency is low.
Therefore, how to improve the conventional electromigration test structure to solve the above-mentioned problems is a current urgent need.
Disclosure of Invention
The invention aims to provide an electromigration test structure and an electromigration test method, which can avoid influencing the wiring design of a chip area, can perform wafer-level rapid test and can rapidly judge the specific position of electromigration failure.
To achieve the above object, the present invention provides an electromigration test structure located in a scribe line region, the electromigration test structure comprising:
a metal interconnection structure to be tested;
the first sensing electrode is electrically connected with one end of the metal interconnection structure to be tested;
the second sensing electrode is electrically connected with the other end of the metal interconnection structure to be tested;
at least one third sensing electrode electrically connected with at least the position between the two ends of the metal interconnection structure to be tested;
the first loading electrode is electrically connected with the first sensing electrode; the method comprises the steps of,
the second loading electrode is electrically connected with the second sensing electrode.
Optionally, the metal interconnection structure to be tested includes a metal layer to be tested and conductive plugs to be tested located at two ends of the metal layer to be tested, and the first sensing electrode and the second sensing electrode are respectively and electrically connected with the conductive plugs to be tested at two ends of the metal layer to be tested.
Optionally, at least one layer of test metal layer and test conductive plug are connected below each third sensing electrode, and one end of the test metal layer is electrically connected with at least a position between two ends of the metal layer to be tested through the test conductive plug.
Optionally, the electromigration test structure includes two third sensing electrodes, a layer of test metal layer is connected below each third sensing electrode, and one end of each test metal layer is electrically connected with the two ends of the metal layer to be tested through the test conductive plug.
Optionally, the electromigration test structure includes two third sensing electrodes, a first test metal layer on an upper layer and a third test metal layer on a lower layer are connected below a first third sensing electrode close to the first sensing electrode, one end of the first test metal layer is electrically connected with one end of the third test metal layer through a test conductive plug, and the other end of the third test metal layer is electrically connected with a test conductive plug at one end of the metal layer to be tested; and a second test metal layer on the upper layer and a fourth test metal layer on the lower layer are connected below a second third sensing electrode close to the second sensing electrode, one end of the second test metal layer is electrically connected with one end of the fourth test metal layer through a test conductive plug, and the other end of the fourth test metal layer is electrically connected with the two ends of the metal layer to be tested through a test conductive plug.
Optionally, the electromigration test structure further includes a plurality of connection metal wires, and the first sensing electrode and the second sensing electrode are electrically connected with the conductive plugs to be tested at two ends of the metal layer to be tested, the first loading electrode and the first sensing electrode, and the second loading electrode and the second sensing electrode respectively through the connection metal wires.
Optionally, the at least one third sensing electrode is located between the first sensing electrode and the second sensing electrode, the first loading electrode is located on a side of the first sensing electrode away from the third sensing electrode, and the second loading electrode is located on a side of the second sensing electrode away from the third sensing electrode.
The invention also provides an electromigration test method, which comprises the following steps:
providing a test sample comprising the electromigration test structure of the present invention;
testing a change in resistance value between any two of the first, second, and at least one third sensing electrodes to obtain a plurality of resistance offset values;
judging whether each of the resistance offset values is larger than a preset failure value; the method comprises the steps of,
And determining the electromigration failure position of the metal interconnection structure to be tested according to the resistance offset value larger than the preset failure value.
Optionally, the step of testing the change in resistance value between any two of the first, second and at least one third sensing electrodes comprises:
inputting current to the first loading electrode or the second loading electrode or the first loading electrode and the second loading electrode sequentially, and testing voltage at the first sensing electrode, the second sensing electrode and the at least one third sensing electrode to obtain a plurality of initial voltage values;
dividing the difference between any two of the plurality of initial voltage values by the input current value to obtain a plurality of initial resistance values;
continuously inputting current to the first loading electrode or the second loading electrode or the first loading electrode and the second loading electrode which are used as input ends, and testing voltage at the first sensing electrode, the second sensing electrode and the at least one third sensing electrode after a preset test time so as to obtain a plurality of test voltage values;
Dividing the difference between any two of the plurality of test voltage values by the input current value to obtain a plurality of test resistance values; the method comprises the steps of,
calculating the plurality of test resistance values is based on the corresponding plurality of initial resistance values to obtain a plurality of resistance offset values.
Optionally, taking the first loading electrode as an input end, and grounding the second loading electrode; or, taking the second loading electrode as an input end, and grounding the first loading electrode; or, the first loading electrode and the second loading electrode are sequentially used as input ends, and one end which is not used as the input end is grounded.
Optionally, the step of determining the electromigration failure location of the metal interconnection structure to be tested according to the resistance offset value greater than the preset failure value includes: and determining the position between two sensing electrodes corresponding to the resistance offset value larger than the preset failure value as the electromigration failure position of the metal interconnection structure to be tested.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the electromigration test structure provided by the invention is positioned in the cutting channel region and comprises the first sensing electrode electrically connected with one end of the metal interconnection structure to be tested, the second sensing electrode electrically connected with the other end of the metal interconnection structure to be tested, at least one third sensing electrode electrically connected with the position between two ends of the metal interconnection structure to be tested, the first loading electrode electrically connected with the first sensing electrode and the second loading electrode electrically connected with the second sensing electrode, so that the wiring design of a chip region can be prevented from being influenced, the wafer-level rapid test can be performed, and the specific position of electromigration failure can be rapidly judged.
2. According to the electromigration test method, as the test sample containing the electromigration test structure is provided, the specific failure position can be obtained by analyzing the electrical data, and the speed of confirming the electromigration failure position is improved; and moreover, the wafer-level rapid test can be performed, and the cost of the package-level test is saved.
Drawings
FIG. 1a is a schematic top view of a prior art electromigration test structure;
FIG. 1b is a cross-sectional view of the electromigration test structure shown in FIG. 1a along the direction AA';
FIG. 2a is a schematic top view of an electromigration test structure according to a first embodiment of the present invention;
FIG. 2b is a cross-sectional view of the electromigration test structure shown in FIG. 2a along the direction BB';
FIG. 3a is a schematic top view of an electromigration test structure according to a second embodiment of the present invention;
FIG. 3b is a cross-sectional view of the electromigration test structure shown in FIG. 3a along the direction CC';
FIG. 4a is a schematic top view of an electromigration test structure according to a third embodiment of the present invention;
FIG. 4b is a cross-sectional view of the electromigration test structure shown in FIG. 4a along DD';
FIG. 5 is a flow chart of an electromigration test method according to an embodiment of the present invention.
Wherein, the reference numerals of fig. 1a to 5 are as follows:
11-a metal layer to be tested; 12-a conductive plug to be tested; 13-connecting metal wires; 14-a first bonding pad; 15-a second bonding pad; f11-a first loading electrode; f21-a second loading electrode; s11-a first sensing electrode; s21-a second sensing electrode; a1-a cutting lane region; 21-a metal layer to be tested; 22-a conductive plug to be tested; 231-a first test metal layer; 232-a second test metal layer; 233-a third test metal layer; 234-fourth test metal layer; 241-a first test conductive plug; 242-a second test conductive plug; 243-a third test conductive plug; 25-connecting metal wires; f12-a first loading electrode; f22-a second loading electrode; s12, a first sensing electrode; s22-a second sensing electrode; s32, S42-a third sensing electrode; a2-scribe line region.
Detailed Description
To make the objects, advantages and features of the present invention more apparent, the electromigration test structure and the electromigration test method according to the present invention are described in further detail below. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
An embodiment of the present invention provides an electromigration test structure, which is located in a scribe line region A2, wherein the electromigration test structure includes a metal interconnect structure to be tested, a first sensing electrode S12, a second sensing electrode S22, at least one third sensing electrode, a first loading electrode F12 and a second loading electrode F22, and the first sensing electrode S12 is electrically connected with one end of the metal interconnect structure to be tested; the second sensing electrode S22 is electrically connected to the other end of the metal interconnection structure to be tested; the at least one third sensing electrode is at least electrically connected with the position between the two ends of the metal interconnection structure to be tested; the first loading electrode F12 is electrically connected with the first sensing electrode S12; the second loading electrode F22 is electrically connected to the second sensing electrode S22.
The electromigration test structure provided in this embodiment is described in detail below with reference to fig. 2a to 4b, wherein the substrate, the dielectric layer and the chip area are not illustrated in fig. 2a to 4 b.
The electromigration test structure is located in a cutting channel area A2, the cutting channel area A2 is located at the periphery of the chip area, and chips can be obtained after cutting along the cutting channel area A2. The electromigration test structure does not occupy the area of the chip area, so that the wiring design of the chip area is prevented from being influenced, the performance of the chip is prevented from being influenced, and the production cost is increased.
The metal interconnection structure to be tested is located in the dielectric layer on the substrate of the scribe line region A2, and the first sensing electrode S12, the second sensing electrode S22, the at least one third sensing electrode, the first loading electrode F12 and the second loading electrode F22 may be located on the top surface of the dielectric layer, so that the probes on the probe card can be used to contact the first sensing electrode S12, the second sensing electrode S22, the at least one third sensing electrode, the first loading electrode F12 and the second loading electrode F22 to perform wafer level testing, so as to speed up testing, reduce cycle time (production period), and avoid cost increase caused by testing after packaging.
The metal interconnection structure to be tested comprises a metal layer to be tested 21 and conductive plugs to be tested 22 positioned at two ends of the metal layer to be tested 21. The conductive plugs 22 to be tested are located above two ends of the metal layer 21 to be tested, and the conductive plugs 22 to be tested may have a one-layer structure, a two-layer structure or a structure with more than two layers. As shown in fig. 2b and 3b, the conductive plugs 22 to be tested are formed with one layer above both ends of the metal layer 21 to be tested.
The first sensing electrode S12 is electrically connected to one end of the metal interconnection structure to be tested; the second sensing electrode S22 is electrically connected to the other end of the metal interconnection structure to be tested. Specifically, the first sensing electrode S12 and the second sensing electrode S22 are electrically connected to the conductive plugs 22 to be tested on two ends of the metal layer 21 to be tested, respectively.
The at least one third sensing electrode is electrically connected to at least a position between two ends of the metal interconnection structure to be tested, that is, the at least one third sensing electrode is electrically connected to at least a position between two ends of the metal layer 21 to be tested. The at least one third sensing electrode may be located between the first sensing electrode S12 and the second sensing electrode S22, for example, two third sensing electrodes S32 and S42 in fig. 3a to 4b are located between the first sensing electrode S12 and the second sensing electrode S22, and a first one of the third sensing electrodes S32 is close to the first sensing electrode S12 and a second one of the third sensing electrodes S42 is close to the second sensing electrode S22.
The first loading electrode F12 is electrically connected to the first sensing electrode S12, and the first loading electrode F12 is located at a side of the first sensing electrode S12 away from the first third sensing electrode S32.
The second loading electrode F22 is electrically connected to the second sensing electrode S22, and the second loading electrode F22 is located at a side of the second sensing electrode S22 away from the second third sensing electrode S42.
The electromigration test structure further includes a plurality of connection metal wires 25, and the first sensing electrode S12 and the second sensing electrode S22 are electrically connected with the conductive plugs 22 to be tested at two ends of the metal layer 21 to be tested, the first loading electrode F12 and the first sensing electrode S12, and the second loading electrode F22 and the second sensing electrode S22 through the connection metal wires 25.
And at least one layer of test metal layer and a test conductive plug are connected below each third sensing electrode, and one end of the test metal layer is electrically connected with at least a position between two ends of the metal layer 21 to be tested through the test conductive plug.
And, the first loading electrode F12, the first sensing electrode S12, the second sensing electrode S22 and the lower portion of the second loading electrode F22 are all connected with a plurality of layers of the connecting metal wires 25, and the connecting metal wires 25 of the upper and lower adjacent layers are electrically connected through conductive plugs (not shown), the first loading electrode F12, the first sensing electrode S12, the second sensing electrode S22 and the connecting metal wires 25 of the lower portion are electrically connected through conductive plugs (not shown), and the third sensing electrode and the lower portion of the testing metal layer are electrically connected through conductive plugs (not shown).
If the conductive plugs 22 to be tested are of at least two-layer structure, the conductive plugs 22 to be tested of the adjacent upper and lower layers may be electrically connected through the connection metal lines 25 or the test metal layers. As shown in fig. 4b, two layers of the conductive plugs 22 to be tested are formed above two ends of the metal layer 21 to be tested, the upper and lower layers of the conductive plugs 22 to be tested on one end of the metal layer 21 to be tested, which is close to the second sensing electrode S22, are electrically connected by a connecting metal wire 25, and the upper and lower layers of the conductive plugs 22 to be tested on one end of the metal layer 21 to be tested, which is close to the first sensing electrode S12, are electrically connected by a third test metal layer 233.
In addition, the test metal layer and the test conductive plug connected below each third sensing electrode are used for performing auxiliary test judgment on the failure position of electromigration, and the number of layers of the test metal layer below the third sensing electrode, the connection positions between the test metal layers of different layers and the test conductive plug, and the connection positions between the test conductive plug and two ends of the metal layer 21 to be tested can be adjusted, so that a plurality of different series circuits are formed between the third sensing electrode, different segmentation parts of the test metal layer below the third sensing electrode and the test conductive plug and the metal layer 21 to be tested, the first loading electrode F12 and the second loading electrode F22, and further the failure position of electromigration is further judged.
The electromigration test structure is described in detail below with reference to the embodiments shown in fig. 2a to 2b, 3a to 3b, and 4a to 4 b. It should be noted that, for convenience of description, a plurality of the third sensing electrodes are denoted by different reference numerals, and a plurality of the test metal layers and a plurality of the test conductive plugs are denoted by different names and reference numerals.
As shown in fig. 2a and 2b, the electromigration test structure includes a third sensing electrode S32, a layer of the test metal layer 231 is electrically connected below the third sensing electrode S32, one end of the test metal layer 231 is electrically connected to the two ends of the underlying metal layer 21 to be tested through a first test conductive plug 241, and the first test conductive plug 241 divides the portion between the two ends of the metal layer 21 to be tested (i.e. the portion between the two ends of the metal layer 22 to be tested). The position of the metal layer to be measured 21 connected to the first test conductive plug 241 may be located near one end of the first sensing electrode S12, near one end of the second sensing electrode S22, or near the middle of the metal layer to be measured 21. Compared with the electromigration test structures shown in fig. 1a and 1b, the electromigration test structures shown in fig. 2a and 2b can determine whether the failure location is located in a section of the circuit between the conductive plug under test 22 and the first conductive plug under test 241 (including the conductive plug under test 22 and the conductive plug under test 241) near the first sensing electrode S12 or in a section of the circuit between the first conductive plug under test 241 and the conductive plug under test 22 near the second sensing electrode S22 (including the conductive plug under test 241 and the conductive plug under test 22), so that the specific failure location can be quickly determined by analyzing the electrical data.
Alternatively, as shown in fig. 3a and 3b, the electromigration test structure includes two third sensing electrodes, namely, a first third sensing electrode S32 and a second third sensing electrode S42, a first test metal layer 231 is electrically connected below the first third sensing electrode S32, a second test metal layer 232 is electrically connected below the second third sensing electrode S42, the first test metal layer 231 and the second test metal layer 232 may be located at the same layer at intervals, one end of the first test metal layer 231 is electrically connected with two ends of the metal layer 21 under test through a first test conductive plug 241, one end of the second test metal layer 232 is electrically connected with two ends of the metal layer 21 under test through a second test conductive plug 242, and the first test conductive plug 241 and the second test conductive plug 242 divide the portion (i.e., the portion 22 between two ends of the metal layer 21 under test) into three conductive segments. The position of the metal layer 21 to be tested electrically connected to the first test conductive plugs 241 and the second test conductive plugs 242 may be located near one end of the first sensing electrode S12, near one end of the second sensing electrode S22, or near the middle of the metal layer 21 to be tested. In comparison with the electromigration test structures shown in fig. 1a and 1b, the electromigration test structures shown in fig. 3a and 3b are capable of determining whether the failure is located in a section of the circuit between the conductive plug under test 22 and the first conductive plug under test 241 (including the conductive plug under test 22 and the first conductive plug under test 241) near the first sensing electrode S12, or in a section of the circuit between the first conductive plug under test 241 and the second conductive plug under test 242 (including the first conductive plug under test 241 and the second conductive plug under test 242), or in a section of the circuit between the second conductive plug under test 242 and the conductive plug under test 22 near the second sensing electrode S22 (including the second conductive plug under test 242 and the conductive plug under test 22); in addition, compared with the electromigration test structures shown in fig. 2a and 2b, the metal layer 21 to be tested is divided into more sections, so that the specific position of failure can be rapidly judged by analyzing the electrical data.
Alternatively, as shown in fig. 4a and 4b, the electromigration test structure includes two third sensing electrodes, namely a first third sensing electrode S32 and a second third sensing electrode S42, a first test metal layer 231 and a lower third test metal layer 233 are connected below the first third sensing electrode S32 near the first sensing electrode S12, one end of the first test metal layer 231 is electrically connected to one end of the third test metal layer 233 through a first test conductive plug 241, the other end of the third test metal layer 233 is electrically connected to a conductive plug 22 to be tested on one end of the metal layer 21 to be tested (i.e. one end near the first sensing electrode S12), and the other end of the third test metal layer 233 is also electrically connected to the first sensing electrode S12 through a conductive plug 22 to be tested above; a second test metal layer 232 on the upper layer and a fourth test metal layer 234 on the lower layer are connected below a second third sensing electrode S42 close to the second sensing electrode S22, one end of the second test metal layer 232 is electrically connected with one end of the fourth test metal layer 234 through a second test conductive plug 242, the other end of the fourth test metal layer 234 is electrically connected with a position between two ends of the metal layer 21 to be tested (i.e. a position between the conductive plugs 22 to be tested at two ends) through a third test conductive plug 243, and the third test conductive plug 243 divides a portion between two ends of the metal layer 21 to be tested into two sections. The position of the metal layer to be tested 21 electrically connected to the third test conductive plug 243 may be located near one end of the first sensing electrode S12, near one end of the second sensing electrode S22, or near the middle of the metal layer to be tested 21. The electromigration test structures shown in fig. 4a and 4b can determine, by analyzing the electrical data, whether the failure location is located in a section of the circuit between the conductive plug under test 22 and the third conductive plug under test 243 (including the conductive plug under test 22 and the third conductive plug under test 243) near the first sensing electrode S12 or in a section of the circuit between the third conductive plug under test 243 and the conductive plug under test 22 near the second sensing electrode S22 (including the third conductive plug under test 243 and the conductive plug under test 22), that is, which section of the conductive plug under test 22 on the metal layer under test 21 and both ends is located; in addition, it can also be determined whether the electromigration failure location is located in the third test metal layer 233, the first test conductive plug 241, the fourth test metal layer 234, and the second test conductive plug 242, so as to exclude whether a failure occurs at a location other than the to-be-tested metal layer 21 and the to-be-tested conductive plug 22, and further quickly and effectively analyze the failure location.
Therefore, as shown in the embodiments of fig. 2a to 2b, 3a to 3b and 4a to 4b, as the number of the third sensing electrodes, the number of layers of the test metal layer below the third sensing electrodes and the number of segments separated by the test conductive plugs between the two ends of the metal layer to be tested 21 increase, the number of series circuits formed between the third sensing electrodes and the different segmented portions of the test metal layer below and the test conductive plugs and the metal layer to be tested 21, the first loading electrode F12 and the second loading electrode F22 increases, so that the specific positions of the failures can be obtained through analysis of electrical data, and the specific positions of the failures can be avoided through multiple slice analysis, thereby saving time and cost.
In addition, for devices such as 3D-ICs with large-size complex structures, the Critical Dimension (CD) is larger, the occupied area of the device region is larger, the occupied area of the dicing channel region is smaller, and the electromigration test structure is more effective for electromigration failure analysis of the large-size complex structures such as 3D-ICs.
In summary, the electromigration test structure provided in the present invention is located in the scribe line region, and the electromigration test structure includes: a metal interconnection structure to be tested; the first sensing electrode is electrically connected with one end of the metal interconnection structure to be tested; the second sensing electrode is electrically connected with the other end of the metal interconnection structure to be tested; at least one third sensing electrode electrically connected with at least the position between the two ends of the metal interconnection structure to be tested; the first loading electrode is electrically connected with the first sensing electrode; and the second loading electrode is electrically connected with the second sensing electrode. The electromigration test structure can avoid influencing the wiring design of the chip area, can perform wafer-level rapid test and can rapidly judge the specific position of electromigration failure.
Based on the same inventive concept, an embodiment of the present invention provides an electromigration test method, referring to fig. 5, as can be seen from fig. 5, the electromigration test method includes:
step S1, providing a test sample comprising the electromigration test structure of the invention;
step S2, testing the change of the resistance value between any two sensing electrodes of the first sensing electrode, the second sensing electrode and the at least one third sensing electrode to obtain a plurality of resistance offset values;
Step S3, judging whether each of the resistance offset values is larger than a preset failure value;
and S4, determining the electromigration failure position of the metal interconnection structure to be tested according to the resistance offset value larger than the preset failure value.
The electromigration test method according to the present embodiment is described in detail below with reference to fig. 2a to 4 b.
According to step S1, a test sample comprising the electromigration test structure of the present invention is provided.
The electromigration test structure refers to the above detailed description of the electromigration test structure of the present invention, and will not be described herein.
According to step S2, a change in resistance value between any two of the first sense electrode S12, the second sense electrode S22, and the at least one third sense electrode is tested to obtain a plurality of resistance offset values.
The step of testing the change in resistance value between any two of the first, second and at least one third sensing electrodes S12, S22 includes: firstly, taking the first loading electrode F12 or the second loading electrode F22 or the first loading electrode F12 and the second loading electrode F22 as input ends to input current, and testing voltages at the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode to obtain a plurality of initial voltage values; then, dividing the difference between any two of the plurality of initial voltage values by the input current value to obtain a plurality of initial resistance values; then, continuing to input current to the first loading electrode F12 or the second loading electrode F22 or sequentially to the first loading electrode F12 and the second loading electrode F22 as input ends, controlling the metal interconnection structure to be tested to generate high temperature through the input current so as to accelerate the electromigration degradation phenomenon, and testing voltages at the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode after a preset test time so as to obtain a plurality of test voltage values; dividing the difference between any two of the plurality of test voltage values by the input current value to obtain a plurality of test resistance values; then, calculating the plurality of test resistance values based on the plurality of initial resistance values of the corresponding circuit to obtain a plurality of resistance offset values, namely, the resistance offset values are equal to the difference value between the test resistance values and the initial resistance values of the corresponding circuit and divided by the initial resistance values of the corresponding circuit.
Alternatively, in the step of testing the resistance value between any two of the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode, the plurality of initial resistance values may be calculated by applying a voltage to the first loading electrode F12 or the second loading electrode F22 or sequentially to the first loading electrode F12 and the second loading electrode F22 and measuring a current at the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode; and stopping inputting current after inputting current for a preset test time by using the first loading electrode F12 or the second loading electrode F22 or the first loading electrode F12 and the second loading electrode F22 in sequence as input ends, and calculating to obtain the plurality of test resistance values by applying voltage to the first loading electrode F12 or the second loading electrode F22 or the first loading electrode F12 and the second loading electrode F22 in sequence and measuring current at the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode, and further calculating to obtain the plurality of resistance offset values.
In addition, the predetermined test time may be estimated according to a test condition (including an input current, etc.) and a preset failure value. The resistance can be measured after the preset test time to confirm the change condition of the resistance value after the test is finished; and, can also carry out real-time measurement to monitor the real-time change condition of resistance value along with test time.
If the first loading electrode F12 is used as an input end, the second loading electrode F22 is grounded; alternatively, if the second loading electrode F22 is used as an input terminal, the first loading electrode F12 is grounded; or, if the first loading electrode F12 and the second loading electrode F22 are sequentially used as input ends, the one end which is not used as an input end is grounded, that is, the first loading electrode F12 is used as an input end and the second loading electrode F22 is grounded for testing, and then the second loading electrode F22 is used as an input end and the first loading electrode F12 is grounded for testing, and the failure position of electromigration is judged through two tests, so that the judgment result is more accurate.
The first loading electrode F12 is used as an input end to input a current I F12 The second loading electrode F22 is grounded to illustrate the calculation formulas of the initial resistance value and the test resistance value, and it should be noted that, since the calculation formulas of the initial resistance value and the test resistance value of the same circuit are the same, the calculation formulas describing the resistance values are unified below, the two calculation formulas are not distinguished, and the initial voltage value and the test voltage value are uniformly described as voltage values 。
In fig. 2a to 2b, the voltage values tested at the first, second and third sensing electrodes S12, S22 and S32 are respectively V S12 、V S22 And V S32 Three resistance values can be obtained, and the total resistance value R= (V) of the metal interconnection structure to be tested S12 -V S22 )/I F12 Resistance value r1= (V) of a section of circuit between the conductive plug 22 to be tested and the first test conductive plug 241 near the first sensing electrode S12 S12 -V S32 )/I F12 Resistance value r2= (V) of a section of circuit between the first test conductive plug 241 and the conductive plug 22 to be tested near the second sensing electrode S22 S32 -V S22 )/I F12 The method comprises the steps of carrying out a first treatment on the surface of the In fig. 3a to 3b, the voltage values tested at the first sensing electrode S12, the second sensing electrode S22, the first one of the third sensing electrodes S32 and the second one of the third sensing electrodes S42 are V S12 、V S22 、V S32 And V S42 Six resistance values can be obtained, and the total resistance value R= (V) of the metal interconnection structure to be tested S12 -V S22 )/I F12 Resistance value r1= (V) of a section of circuit between the conductive plug 22 to be tested and the first test conductive plug 241 near the first sensing electrode S12 S12 -V S32 )/I F12 Resistance value r2= (V) of a section of circuit between the conductive plug 22 to be tested and the second conductive plug 242 near the first sensing electrode S12 S12 -V S42 )/I F12 Resistance value r3= (V) of a section of circuit between the first test conductive plug 241 and the conductive plug 22 to be tested near the second sensing electrode S22 S32 -V S22 )/I F12 Resistance value r4= (V) of a section of circuit between the second test conductive plug 242 and the conductive plug 22 to be tested near the second sensing electrode S22 S42 -V S22 )/I F12 Resistance value r5= (V) of a section of circuit between the first test conductive plug 241 and the second test conductive plug 242 S32 -V S42 )/I F12 The method comprises the steps of carrying out a first treatment on the surface of the In FIGS. 4a to 4b, inThe voltage values tested at the first sensing electrode S12, the second sensing electrode S22, the third sensing electrode S32 and the third sensing electrode S42 are respectively V S12 、V S22 、V S32 And V S42 Six resistance values can be obtained, and the total resistance value R= (V) of the metal interconnection structure to be tested S12 -V S22 )/I F12 Resistance value r1= (V) of the circuit between the conductive plug 22 to be tested on the third test metal layer 233 and the first test conductive plug 241 near the first sensing electrode S12 S12 -V S32 )/I F12 Resistance value r2= (V) of circuit between the conductive plug 22 to be tested on the third test metal layer 233 and the second test conductive plug 242 near the first sensing electrode S12 S12 -V S42 )/I F12 A resistance value r3= (V) of a circuit between the first test conductive plug 241 and the conductive plug 22 to be tested on the connection metal line 25 near the second sensing electrode S22 S32 -V S22 )/I F12 A resistance value r4= (V) of a circuit between the second test conductive plug 242 and the conductive plug 22 to be tested on the connection metal line 25 near the second sensing electrode S22 S42 -V S22 )/I F12 Resistance value r5= (V) of a section of circuit between the first test conductive plug 241 and the second test conductive plug 242 S32 -V S42 )/I F12 。
In addition, if the second loading electrode F22 is used as the input end to input the current I F22 The above-mentioned calculation formula of the resistance value of each section of circuit in fig. 2 a-4 b can be the difference between the voltage value measured at the sensing electrode close to the input end and the voltage value measured at the sensing electrode far from the input end divided by the input current I F22 。
After the initial resistance value and the test resistance value of the corresponding circuit are obtained by calculation according to the calculation formula of the resistance value, the total resistance offset value of the metal interconnection structure to be tested and the resistance offset value of each segment circuit can be obtained after the current is input from the first loading electrode F12 or the second loading electrode F22 or from the first loading electrode F12 and the second loading electrode F22 sequentially for a predetermined time.
According to step S3, it is determined whether each of the plurality of resistance offset values is greater than a preset failure value.
The preset failure value may be defined according to an industry test standard of wafer level testing, for example, the preset failure value may be 3%, that is, the test resistance value deviates by more than 3% from the initial resistance value of the corresponding circuit, and the corresponding circuit fails.
And according to the step S4, determining the electromigration failure position of the metal interconnection structure to be tested according to the resistance offset value larger than the preset failure value. Specifically, the position between the two sensing electrodes corresponding to the resistance offset value larger than the preset failure value is determined as the electromigration failure position of the metal interconnection structure to be tested.
In the embodiment shown in fig. 2a to 2b, if only the resistance offset value of the resistance value R1 is greater than the preset failure value, the electromigration failure location is located at the position of the conductive plug 22 to be tested close to the first sensing electrode S12, the position of the first test conductive plug 241 or the position of the metal layer 21 to be tested between the conductive plug 22 to be tested and the first test conductive plug 241 of the first sensing electrode S12, but not in a section of the circuit between the first test conductive plug 241 and the conductive plug 22 to be tested close to the second sensing electrode S22, so that the failure location is avoided by performing a plurality of slice analyses on the whole section of the metal interconnect structure to be tested, so that the failure location can be obtained by analyzing the electrical data, and the speed of obtaining the failure location by analyzing is improved; if the resistance deviation value of the resistance value R2 is larger than the preset failure value, the corresponding failure position can be obtained in the same way.
In the embodiment shown in fig. 3a to 3b, if only the resistance offset value of the resistance value R1 is greater than the preset failure value, the failure position is located in a section of the circuit between the to-be-tested conductive plug 22 adjacent to the first sensing electrode S12 and the first test conductive plug 241; if the resistance offset value of the resistance value R2 is greater than the preset failure value, the failure position is located in a section of the circuit between the to-be-tested conductive plug 22 and the second test conductive plug 242 close to the first sensing electrode S12, and the resistance offset value of the resistance value R1 is less than the preset failure value, and the resistance offset value of the resistance value R5 is greater than the preset failure value, it may be determined that the failure position is located in a section of the circuit between the first test conductive plug 241 and the second test conductive plug 242. Therefore, by the combination analysis between the resistance offset value of the resistance value R1 and the resistance offset value of the resistance value R5, it can be determined which part of the circuit the failure position is located in, and compared with the embodiment shown in fig. 2a to 2b, the number of segments of the metal layer 21 to be tested is increased, so that the range of the failure position is further reduced, and the analysis speed is improved.
In the embodiment shown in fig. 4a to 4b, if only the resistance offset value of the resistance value R1 is greater than the preset failure value, the failure position is located in the circuit between the conductive plug 22 to be tested on the third test metal layer 233 and the first test conductive plug 241, which is close to the first sensing electrode S12, that is, the failure position is excluded from being located in the metal layer 21 to be tested, but is located in other circuits; if the resistance offset of the resistance values R3 and R4 is greater than the preset failure value and the resistance offset of the resistance value R5 is less than the preset failure value, the failure position is excluded from being located in a section of the circuit between the first test conductive plug 241 and the second test conductive plug 242, but is located in a circuit between the third test conductive plug 243 and the conductive plug 22 to be tested located on the connecting metal line 25 near the second sensing electrode S22. Therefore, compared to the embodiments shown in fig. 2a to 3b, it is also possible to determine whether the failure location is located in a structure other than the metal interconnection structure under test (i.e., the third test metal layer 233 and the fourth test metal layer 234).
According to the steps S1 to S4, the electromigration situation is tested and analyzed by adopting the test sample containing the electromigration test structure provided by the invention, so that the failure position can be obtained by analyzing the electrical data, and the speed of confirming the electromigration failure position can be improved; in addition, as the test is carried out by the loading electrode and the sensing electrode, the wafer level test can be carried out by adopting the probe card, the test speed is improved, and the cost of the package level test is saved; and the method is more effective for electromigration failure analysis of large-size complex structures such as 3D-ICs.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (8)
1. An electromigration test structure located in a scribe line region, the electromigration test structure comprising:
a metal interconnection structure to be tested;
the first sensing electrode is electrically connected with one end of the metal interconnection structure to be tested;
the second sensing electrode is electrically connected with the other end of the metal interconnection structure to be tested;
At least two third sensing electrodes which are at least electrically connected with positions between two ends of the metal interconnection structure to be tested;
the first loading electrode is electrically connected with the first sensing electrode; the method comprises the steps of,
the second loading electrode is electrically connected with the second sensing electrode;
the first sensing electrode and the second sensing electrode are respectively and electrically connected with the conductive plugs to be tested at the two ends of the metal layer to be tested; and at least two layers of test metal layers and test conductive plugs are connected below each third sensing electrode, and one end of each test metal layer is electrically connected with at least the position between two ends of the metal layer to be tested through the test conductive plug, so that the electromigration failure position can be judged to be positioned in which section of the metal layer to be tested, the conductive plug to be tested, the test metal layer and the test conductive plug.
2. The electromigration test structure of claim 1, wherein the electromigration test structure comprises two third sensing electrodes, a first test metal layer on an upper layer and a third test metal layer on a lower layer are connected below a first third sensing electrode close to the first sensing electrode, one end of the first test metal layer is electrically connected with one end of the third test metal layer through a test conductive plug, and the other end of the third test metal layer is electrically connected with a test conductive plug at one end of the metal layer to be tested; and a second test metal layer on the upper layer and a fourth test metal layer on the lower layer are connected below a second third sensing electrode close to the second sensing electrode, one end of the second test metal layer is electrically connected with one end of the fourth test metal layer through a test conductive plug, and the other end of the fourth test metal layer is electrically connected with the two ends of the metal layer to be tested through a test conductive plug.
3. The electromigration test structure of claim 1, further comprising a plurality of connection metal lines, wherein the first sensing electrode and the second sensing electrode are electrically connected to the conductive plugs to be tested at both ends of the metal layer to be tested, the first loading electrode and the first sensing electrode, and the second loading electrode and the second sensing electrode, respectively, through the connection metal lines.
4. The electromigration test structure of any of claims 1 to 3, wherein the at least two third sense electrodes are located between the first sense electrode and the second sense electrode, the first loading electrode is located on a side of the first sense electrode remote from the third sense electrode, and the second loading electrode is located on a side of the second sense electrode remote from the third sense electrode.
5. An electromigration test method comprising:
providing a test sample comprising the electromigration test structure of any of claims 1 to 4;
testing a change in resistance value between any two of the first, second, and at least two third sensing electrodes to obtain a plurality of resistance offset values;
Judging whether each of the resistance offset values is larger than a preset failure value; the method comprises the steps of,
and determining the electromigration failure position of the metal interconnection structure to be tested according to the resistance offset value larger than the preset failure value.
6. The electromigration test method of claim 5, wherein the step of testing the change in resistance value between any two of the first sensing electrode, the second sensing electrode and the at least two third sensing electrodes comprises:
inputting current to the first loading electrode or the second loading electrode or the first loading electrode and the second loading electrode sequentially, and testing voltages at the first sensing electrode, the second sensing electrode and the at least two third sensing electrodes to obtain a plurality of initial voltage values;
dividing the difference between any two of the plurality of initial voltage values by the input current value to obtain a plurality of initial resistance values;
continuously inputting current to the first loading electrode or the second loading electrode or the first loading electrode and the second loading electrode which are used as input ends, and testing voltages at the first sensing electrode, the second sensing electrode and the at least two third sensing electrodes after a preset test time so as to obtain a plurality of test voltage values;
Dividing the difference between any two of the plurality of test voltage values by the input current value to obtain a plurality of test resistance values; the method comprises the steps of,
calculating the plurality of test resistance values is based on the corresponding plurality of initial resistance values to obtain a plurality of resistance offset values.
7. The electromigration test method of claim 6, wherein the first loading electrode is used as an input terminal, and the second loading electrode is grounded; or, taking the second loading electrode as an input end, and grounding the first loading electrode; or, the first loading electrode and the second loading electrode are sequentially used as input ends, and one end which is not used as the input end is grounded.
8. The electromigration test method of claim 5, wherein determining the electromigration failure location of the metal interconnect under test from a resistance offset value greater than the predetermined failure value comprises: and determining the position between two sensing electrodes corresponding to the resistance offset value larger than the preset failure value as the electromigration failure position of the metal interconnection structure to be tested.
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