CN205542717U - Electro -migration test structure of silicon through -hole - Google Patents
Electro -migration test structure of silicon through -hole Download PDFInfo
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- CN205542717U CN205542717U CN201620066266.0U CN201620066266U CN205542717U CN 205542717 U CN205542717 U CN 205542717U CN 201620066266 U CN201620066266 U CN 201620066266U CN 205542717 U CN205542717 U CN 205542717U
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Abstract
The utility model provides an electro -migration test structure of silicon through -hole, include: first silicon through -hole and second silicon through -hole through the underlying metal connection, first silicon through -hole reaches first test terminal and second test terminal are connected respectively to the upper end of second silicon through -hole, first silicon through -hole reaches second silicon through -hole passes through an underlying metal and a temperature sensor link to each other. The utility model discloses an electro -migration test structure of silicon through -hole increases temperature sensor on the basis of original test structure to the joule heat that this perception heavy current produced, and adjust electromigration test's temperature environment in view of the above, and then avoid the influence of joule heat effect to testing the structure, improve silicon through -hole electromigration test's the accuracy and the yield of semiconductor product.
Description
Technical field
This utility model relates to field of semiconductor device test, particularly relates to the electro-migration testing knot of a kind of silicon through hole
Structure.
Background technology
Through-silicon-via technology, general abbreviation silicon through hole technology, english abbreviation is TSV (through silicon via).
It is a kind of new technical solution that in three dimensional integrated circuits, stacked chips realizes interconnection.Owing to silicon through hole technology can make
The density that chip stacks at three-dimensional is maximum, interconnection line between chip is the shortest, overall dimensions is minimum, can be effectively realized
This 3D chip laminate, produces that structure is more complicated, performance is more powerful, the most cost-efficient chip, becomes current electronics
The most noticeable a kind of technology in encapsulation technology.
Along with the continuous expansion of physical dimension, electric current density sharply increases in circuit interconnects, and one brought main
Integrity problem be exactly electromigration.Electromigration (Electro Migration, EM) is that quasiconductor aluminum bronze making technology back segment can
One of big event by property assessment, is shifted by the momentum between conduction electrons and the metallic atom of diffusion and causes.At a constant temperature
Under degree, applying certain electric current in a metal, when electromigration occurs, the part momentum of a moving electron is transferred to neighbouring
Active ions, this results in this ion and leaves home position.When electric current density is bigger, electronics under the driving of electrostatic field force from
Negative electrode forms " electron wind " (Electron Wind) to anode displacement, and then the atom of vast number can be caused away from it
Home position.As time goes on, electromigration can cause conductor, occurs fracture or breach in the narrowest wire
And then the flowing of prevention electronics, this defect is referred to as cavity (Void) or internal failure, i.e. opens a way.Electromigration also results in be led
Atom packing in body to proximity conductor drift and then form thrust (Hillock), produces unexpected electrical connection, the shortest
Road.Owing to silicon through hole is by metal filled, therefore there is also ELECTROMIGRATION PHENOMENON.
Owing to silicon through hole needs through whole silicon, when silicon through hole is carried out electro-migration testing, generally require applying
Big electric current, with accelerated test, but big current potential must produce bigger Joule heat, and Joule heat can make whole silicon through hole electricity
The temperature migrating test structure raises under former test temperature conditions so that the actual test of silicon through hole electro-migration testing structure is asked
Topic improves, and then electro-migration testing result is produced impact, it is impossible to its electromigration characteristic of accurate evaluation.
Therefore, how to avoid the impact on silicon through hole electro-migration testing of Joule heat that high-current leading rises, improve silicon through hole electricity
Migrate the accuracy of test, it is ensured that the q&r of semiconductor structure, and then the yields improving semiconductor device becomes
For one of those skilled in the art's problem demanding prompt solution.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide the electromigration of a kind of silicon through hole
Test structure, affects test result for solving the Joule heat that in prior art, in silicon through hole electro-migration testing, big electric current produces
Problem.
For achieving the above object and other relevant purposes, this utility model provides the electro-migration testing knot of a kind of silicon through hole
Structure, the electro-migration testing structure of described silicon through hole at least includes:
The the first silicon through hole connected by underlying metal and the second silicon through hole, described first silicon through hole and described second silicon are logical
The upper end in hole connects the first test lead and the second test lead, described first silicon through hole and described second silicon through hole respectively by described
Underlying metal and a temperature sensor are connected.
Preferably, described temperature sensor includes the 3rd silicon through hole and the 4th silicon through hole being connected with described underlying metal,
The upper end of described 3rd silicon through hole and described 4th silicon through hole connects the 3rd test lead and the 4th test lead respectively.
It is highly preferred that described first silicon through hole is as measurand, described 3rd silicon through hole arrives with described 4th silicon through hole
The distance of described first silicon through hole is equal.
It is highly preferred that described test lead includes voltage tester end and testing current end.
It is highly preferred that each test lead be arranged in parallel.
It is highly preferred that the material filled in each silicon through hole is Cu or Al.
Preferably, the material of described underlying metal is Cu or Al.
As it has been described above, the electro-migration testing structure of silicon through hole of the present utility model, have the advantages that
The electro-migration testing structure of silicon through hole of the present utility model increases temperature sensing on the basis of original test structure
Device, the Joule heat produced with the big electric current of this perception, and regulate the temperature environment of electro-migration testing accordingly, and then avoid a joule thermal effect
The impact of reply test structure, improves accuracy and the yield of semiconductor product of silicon through hole electro-migration testing.
Accompanying drawing explanation
Fig. 1 is shown as the schematic perspective view of the electro-migration testing structure of silicon through hole of the present utility model.
Fig. 2 is shown as the schematic top plan view of the electro-migration testing structure of silicon through hole of the present utility model.
Element numbers explanation
The electro-migration testing structure of 1 silicon through hole
11 underlying metals
121～124 first～the 4th silicon through hole
131～134 first～the 4th test lead
F2, F1, F1 ', F ' first～the 4th voltage tester end
S2, S1, S ' first, the 3rd～the 4th testing current end
S1～S5 step
Detailed description of the invention
Below by way of specific instantiation, embodiment of the present utility model being described, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages of the present utility model and effect easily.This utility model can also be by additionally
Different detailed description of the invention is carried out or applies, the every details in this specification can also based on different viewpoints with should
With, under without departing from spirit of the present utility model, carry out various modification or change.
Refer to Fig. 1～Fig. 2.It should be noted that the diagram provided in the present embodiment illustrates this most in a schematic way
The basic conception of utility model, the most graphic in time only display with relevant assembly in this utility model rather than is implemented according to reality
Component count, shape and size are drawn, and during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random changing
Become, and its assembly layout kenel is likely to increasingly complex.
As shown in Fig. 1～Fig. 2, the present invention provides the electro-migration testing structure 1 of a kind of silicon through hole, the electricity of described silicon through hole to move
Move test structure 1 at least to include:
The first silicon through hole 121 and the second silicon through hole 122 connected by underlying metal 11, described first silicon through hole 121 and
The upper end of described second silicon through hole 122 connects the first test lead 131 and the second test lead 132, described first silicon through hole 121 respectively
And described second silicon through hole 122 is connected with a temperature sensor by described underlying metal 11.
Specifically, as it is shown in figure 1, in the present embodiment, described first silicon through hole 121 is as test object, and its one end is even
Connecing described underlying metal 11, the other end connects described first test lead 131.As in figure 2 it is shown, described first test lead 131 includes
First voltage tester end F2 and the first testing current end S2.In the present embodiment, described underlying metal 11 and each silicon through hole are filled out
The material filled includes but not limited to Cu, Al.
Specifically, as it is shown in figure 1, one end of described second silicon through hole 122 connects described underlying metal 11, the other end connects
Described second test lead 132.As in figure 2 it is shown, described second test lead 132 includes the second voltage tester end F1.
Specifically, as it is shown in figure 1, described temperature sensor is to described first silicon through hole 121, described second silicon through hole 122
And the temperature on described underlying metal 11 carries out detecting and exporting relevant temperature information, including: one end and described underlying metal 11
The 3rd silicon through hole 123 and the 4th silicon through hole 124 connected, the other end of described 3rd silicon through hole 123 connects the 3rd test lead
133, the other end the 4th test lead 134 of described 4th silicon through hole 124.As in figure 2 it is shown, described 3rd test lead 133 includes
Three voltage tester end F1 ' and the 3rd testing current end S1；Described 4th test lead 134 includes the 4th voltage tester end F ' and the 4th
Testing current end S '.
Specifically, as in figure 2 it is shown, described 3rd silicon through hole 123 and described 4th silicon through hole 124 are to described first silicon through hole
The distance of 121 is equal.
Specifically, as in figure 2 it is shown, described first test lead 131～described 4th test lead 134 be arranged in parallel, to reduce
The area shared by electro-migration testing structure 1 of described silicon through hole.
As it is shown in figure 1, the operation principle of the electro-migration testing structure 1 of described silicon through hole is as follows:
Step S1: the silicon of the electro-migration testing structure 1 with described silicon through hole is put in chamber, to described chamber
Heating, then detects described 3rd test lead 133 and described 4th test lead 134, to obtain the temperature of described temperature sensor
Coefficient T CR.
Specifically, in the present embodiment, described chamber temp be 25 DEG C, 50 DEG C, under conditions of 75 DEG C, the described 3rd
Apply electric current on testing current end S1 and described 4th testing current end S ', detect described tertiary voltage test lead F1 ' and described
Voltage on 4th voltage tester end F ', to obtain resistance value；Or at described tertiary voltage test lead F1 ' and described 4th electricity
Apply voltage on pressure test lead F ', detect the electric current on described 3rd testing current end S1 and described 4th testing current end S ',
To obtain resistance value.And then obtain the relation (i.e. temperature coefficient TCR) of temperature and the resistance of described temperature sensor.
Step S2: described chamber temp is set as target temperature Ttarget, by described 3rd test lead 133 and described
4th test lead 134 obtains target temperature TtargetUnder the resistance of described temperature sensor, be designated as Rsensor-0。
Specifically, in the present embodiment, described target temperature TtargetIt it is 300 DEG C.
Step S3: at described target temperature TtargetUnder by described first test lead 131 and described second test lead 132
Apply electric current, then obtained the electricity of described temperature sensor by described 3rd test lead 133 and described 4th test lead 134
Resistance, is designated as Rsensor-n。
Step S4: obtain the Joule heat that big electric current produces according to formula.
Specifically, Rsensor_n=Rsensor_0Δ T TCR, (1)
Thus obtain the relational expression of Joule heat that big electric current produces:
The Joule heat obtaining the generation of big electric current that relevant parameter step S1～step S3 measured substitutes into formula (2) is corresponding
Temperature.
Step S5: by described target temperature TtargetIt is re-set as Ttarget-Δ T, and by Ttarget-Δ T is as described chamber
The design temperature of room, carries out electro-migration testing to silicon through hole at this temperature.
In the silicon through hole electro-migration testing now carried out, the actual temperature on the electro-migration testing structure of described silicon through hole is
Theoretical temperature required by test condition, it is to avoid the Joule heat impact on test, the accuracy of test is greatly improved.
As it has been described above, the electro-migration testing structure of silicon through hole of the present utility model, have the advantages that
The electro-migration testing structure of silicon through hole of the present utility model increases temperature sensing on the basis of original test structure
Device, the Joule heat produced with the big electric current of this perception, and regulate the temperature environment of electro-migration testing accordingly, and then avoid a joule thermal effect
The impact of reply test structure, improves accuracy and the yield of semiconductor product of silicon through hole electro-migration testing.
In sum, this utility model provides the electro-migration testing structure of a kind of silicon through hole, including: by underlying metal even
The the first silicon through hole connect and the second silicon through hole, the upper end of described first silicon through hole and described second silicon through hole connects the first survey respectively
Examination end and the second test lead, described first silicon through hole and described second silicon through hole are by described underlying metal and a temperature sensor
It is connected.The electro-migration testing structure of silicon through hole of the present utility model increases temperature sensor on the basis of original test structure,
The Joule heat produced with the big electric current of this perception, and regulate the temperature environment of electro-migration testing accordingly, and then avoid joule heating effect
Impact on test structure, improves accuracy and the yield of semiconductor product of silicon through hole electro-migration testing.So, this practicality is new
Type effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment only illustrative principle of the present utility model and effect thereof are new not for limiting this practicality
Type.Above-described embodiment all can be carried out by any person skilled in the art under spirit and the scope of the present utility model
Modify or change.Therefore, art has usually intellectual such as without departing from the essence disclosed in this utility model
All equivalences completed under god and technological thought are modified or change, and must be contained by claim of the present utility model.
Claims (7)
1. the electro-migration testing structure of a silicon through hole, it is characterised in that the electro-migration testing structure of described silicon through hole at least wraps
Include:
The the first silicon through hole connected by underlying metal and the second silicon through hole, described first silicon through hole and described second silicon through hole
Upper end connects the first test lead and the second test lead, described first silicon through hole and described second silicon through hole respectively by described bottom
Metal and a temperature sensor are connected.
The electro-migration testing structure of silicon through hole the most according to claim 1, it is characterised in that: described temperature sensor includes
The 3rd silicon through hole being connected with described underlying metal and the 4th silicon through hole, described 3rd silicon through hole and described 4th silicon through hole upper
End connects the 3rd test lead and the 4th test lead respectively.
The electro-migration testing structure of silicon through hole the most according to claim 2, it is characterised in that: described first silicon through hole conduct
Measurand, described 3rd silicon through hole is equal to the distance of described first silicon through hole with described 4th silicon through hole.
The electro-migration testing structure of silicon through hole the most according to claim 1 and 2, it is characterised in that: described test lead includes
Voltage tester end and testing current end.
The electro-migration testing structure of silicon through hole the most according to claim 1 and 2, it is characterised in that: each test lead is parallel to be set
Put.
The electro-migration testing structure of silicon through hole the most according to claim 1 and 2, it is characterised in that: each silicon through hole is filled
Material be Cu or Al.
The electro-migration testing structure of silicon through hole the most according to claim 1, it is characterised in that: the material of described underlying metal
For Cu or Al.
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| CN201620066266.0U CN205542717U (en) | 2016-01-22 | 2016-01-22 | Electro -migration test structure of silicon through -hole |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112255526A (en) * | 2020-09-09 | 2021-01-22 | 北京航天控制仪器研究所 | Preparation method and test method of copper-filled silicon through hole electromigration test structure |
| CN112864131A (en) * | 2021-01-27 | 2021-05-28 | 武汉新芯集成电路制造有限公司 | Electromigration test structure and electromigration test method |
-
2016
- 2016-01-22 CN CN201620066266.0U patent/CN205542717U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112255526A (en) * | 2020-09-09 | 2021-01-22 | 北京航天控制仪器研究所 | Preparation method and test method of copper-filled silicon through hole electromigration test structure |
| CN112864131A (en) * | 2021-01-27 | 2021-05-28 | 武汉新芯集成电路制造有限公司 | Electromigration test structure and electromigration test method |
| CN112864131B (en) * | 2021-01-27 | 2024-04-16 | 武汉新芯集成电路制造有限公司 | Electromigration test structure and electromigration test method |
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