CN104183574B - Semiconductor testing structure and a semiconductor testing method - Google Patents
Semiconductor testing structure and a semiconductor testing method Download PDFInfo
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- CN104183574B CN104183574B CN201310206572.0A CN201310206572A CN104183574B CN 104183574 B CN104183574 B CN 104183574B CN 201310206572 A CN201310206572 A CN 201310206572A CN 104183574 B CN104183574 B CN 104183574B
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Abstract
Provided are a semiconductor testing structure and a semiconductor testing method. The semiconductor testing structure comprises a first comb-shaped testing electrode, a second comb-shaped testing electrode, and a snake-shaped testing electrode. The comb tooth metallic lines of the first comb-shaped testing electrode and the second comb-shaped testing electrode are embedded in a staggered manner. The snake-shaped testing electrode is arranged between the first comb-shaped testing electrode and the second comb-shaped testing electrode and isolates the comb tooth metallic lines of the first comb-shaped testing electrode from the comb tooth metallic lines of the second comb-shaped testing electrode. Further, the snake-shaped testing electrode is electrically isolated from the first comb-shaped testing electrode and the second comb-shaped testing electrode on both sides thereof. Both ends of the snake-shaped testing electrode are connected with a first testing end. The middle of the snake-shaped testing electrode is connected with a second testing end. The first testing end and the second testing end are connected. Since the first testing end and the second testing end are connected, the voltages at various positions of the snake-shaped testing electrode are equal and the accuracy of tested results can be improved.
Description
Technical field
The present invention relates to semiconductor test field, particularly to a kind of semi-conductor test structure and method of testing.
Background technology
In existing semiconductor technology, multiple layer metal interconnecting construction is usually used so that various device is electrically connected, institute
State the dielectric material electric isolution utilizing insulating properties good between metal interconnecting wires.The reliability of multiple layer metal interconnecting construction is surveyed
Examination for whole IC manufacturing process yield, properties of product and reliability all it is critical that, wherein, with time correlation
The reliability testing of dielectric breakdown (Time dependent Dielectric Breakdown, TDDB) characteristic is surveyed for reliability
Particularly important test event in examination, the dielectric breakdown test with time correlation includes two ways：Constant voltage TDDB and tiltedly
Slope voltage TDDB, characterizes and punctures spy between adjacent metal interconnecting wires by testing corresponding breakdown time and breakdown voltage
Property.
In an embodiment of prior art, it is situated between using between test structure test metal interconnecting wires as shown in Figure 1
Matter breakdown characteristics.In test structure shown in Fig. 1, electrode 20 is relative sets with the second pectination test for the first pectination test electrode 10
Put, and the comb metal wire that described first pectination test electrode 10 tests electrode 20 with the second pectination is staggered mutually embedding, one snakelike
Are tested electrode 10 by the first pectination for test electrode 30 and the comb metal wire of the second pectination test electrode 20 is isolated, described comb
Spacing between metal wire and snakelike test electrode sets according to design rule, as current design specified by rules
Minimum spacing between interconnection line.In test process, to the described snakelike one end applying slope test voltage testing electrode 30, institute
State the other end floating of snakelike test electrode 30, and the first pectination test electrode 10 and the second pectination test electrode 20 be grounded,
Measure described two pectination test electrodes and the interelectrode leakage current of snakelike test, slope test voltage is stepped up, and works as electric leakage
When stream suddenly rises, illustrate that two pectinations test medium between electrodes and snakelike test electrode breakdown, described make leakage current steep
The slope test voltage so rising is the breakdown voltage that two pectinations test between electrode and snakelike test electrode.Due to described survey
The snakelike test electrode 30 of examination structure is located between the first pectination test electrode 10 and the second pectination test electrode 20, with actual collection
Become the layout-design of metal interconnecting wires in circuit closer to so that test result and the actual integrated circuit of described breakdown voltage
In breakdown voltage value between adjacent metal interconnecting wires similar.But using the test result that described test structure obtains it is not still
Very accurate.
Content of the invention
The problem that the present invention solves is to provide a kind of semi-conductor test structure and method of testing, can improve test further
The accuracy of result.
For solving the above problems, the present invention provides a kind of semi-conductor test structure, including：Substrate, positioned at described substrate table
First interlayer dielectric layer in face；The first pectination test electrode and the test of the second pectination positioned at described first interlayer dielectric layer surface
Electrode, described first pectination test electrode and the second pectination test electrode are oppositely arranged and described first pectination test electrode and the
The comb metal wire that two pectinations test electrode is staggered mutually embedding；Positioned at described first pectination test electrode and the second pectination test electrode
Between snakelike test electrode, the first pectination tested the comb that electrode and the second pectination test electrode by described snakelike test electrode
Metal wire is isolated, and described snakelike test electrode tests electrode electricity with the first pectination test electrode of both sides, the second pectination
Isolation；The two ends of described snakelike test electrode are connected with the first test lead, the centre position and the of described snakelike test electrode
Two test leads are connected, and described first test lead and the second test lead are connected.
Optionally, also include：The first metal layer between described substrate and the first interlayer dielectric layer, positioned at the first gold medal
Belong to layer surface and run through the first conductive plunger of the first interlayer dielectric layer, described snakelike test electrode is located at the first conductive plunger table
Face and described first conductive plunger correspond to the position of snakelike test electrode, conductive with the first of described snakelike test electrode two ends
The first metal layer that connector is connected is as the first test lead, the first conductive plunger with described snakelike test electrode centre position
The first metal layer being connected is as the second test lead.
Optionally, described first conductive plunger and the position of snakelike test contact electrode are uniformly distributed in described snakelike survey
Examination electrode surface.
Optionally, also include：Positioned at the second interlayer dielectric layer of described first interlayer dielectric layer surface, positioned at described snakelike
Test electrode surface and run through described second interlayer dielectric layer the second conductive plunger and be located at described second conductive plunger, second
The second metal layer of inter-level dielectric layer surface, described second conductive plunger corresponds to the position of snakelike test electrode, with described snake
The second metal layer that second conductive plunger at shape test electrode two ends is connected is as the first test lead, electric with described snakelike test
The second metal layer that second conductive plunger in pole centre position is connected is as the second test lead.
Optionally, described second conductive plunger and the position of snakelike test contact electrode are uniformly distributed in described snakelike survey
Examination electrode surface.
Optionally, also include：Diode between described first test lead, the second test lead, described diode
Anode is connected with the first test lead, and the negative electrode of described diode is connected with the second test lead.
Optionally, described first pectination test electrode, the second pectination test electrode are electrically connected.
Optionally, described first pectination tests electrode, the second pectination tests electrode and the material of snakelike test electrode is copper
Or aluminium.
Optionally, described first pectination tests electrode, the second pectination tests the spacing between electrode and snakelike test electrode
For the minimum spacing between the interconnection line of current design specified by rules.
Present invention also offers a kind of method of testing using above-mentioned semi-conductor test structure, including：In the described first survey
Examination end and the first pectination test electrode, second pectination test electrode between apply test voltage, to described snakelike test electrode with
First pectination test electrode of both sides, the second pectination test electrode carry out dielectric breakdown test.
Optionally, described dielectric breakdown test includes constant voltage and the dielectric breakdown of time correlation is tested and ramp voltage
Dielectric breakdown test with time correlation.
Present invention also offers a kind of method of testing using above-mentioned semi-conductor test structure, including：In the described first survey
Apply positive test voltage so that diode current flow between examination end and the first pectination test electrode, the second pectination test electrode, right
Described snakelike test electrode carries out dielectric breakdown test with the first pectination test electrode of both sides, the second pectination test electrode；?
Apply negative test voltage so that two between described first test lead and the first pectination test electrode, the second pectination test electrode
Pole pipe is ended, and carries out medium to described snakelike test electrode with the first pectination test electrode of both sides, the second pectination test electrode
Puncture test；Test result according to testing twice judge snakelike test electrode each position voltage identical to dielectric breakdown
The impact of test.
Optionally, described dielectric breakdown test includes：Constant voltage is electric with the dielectric breakdown test of time correlation and slope
The dielectric breakdown test of pressure and time correlation.
Optionally, test in described first test lead and the first pectination and just apply between electrode, the second pectination test electrode
Test voltage be：Described first test lead apply positive puncture test voltage, described first pectination test electrode, the second comb
Shape test electrode ground connection；Or described first test lead ground connection, in described first pectination test electrode, the second pectination test electrode
What applying was negative punctures test voltage.
Optionally, test in described first test lead and the first pectination and apply to bear between electrode, the second pectination test electrode
Test voltage be：Puncture test voltage what described first test lead applying was born, described first pectination test electrode, the second comb
Shape test electrode ground connection；Or described first test lead ground connection, in described first pectination test electrode, the second pectination test electrode
What applying was positive punctures test voltage.
Compared with prior art, technical scheme has advantages below：
Two ends due to the snakelike test electrode of described semi-conductor test structure are connected with the first test lead, described snakelike
The centre position of test electrode is connected with the second test lead, and described first test lead and the second test lead are connected, and work as electricity
Pressure is when being applied on described first test lead, the voltage of each position of described snakelike test electrode all identical it is not necessary to consider
The impact to final testing result for the length of snakelike test electrode, thus improve the accuracy of test result.
Brief description
Fig. 1 is the structural representation of the test structure of prior art；
Fig. 2 is the voltage distribution curves of the snakelike test electrode diverse location being obtained using test structure as described in Figure 1
Figure；
Fig. 3～Fig. 8 is the structural representation of the semi-conductor test structure of the embodiment of the present invention.
Specific embodiment
Carry out medium testing to two pectinations using test structure as shown in Figure 1 between electrode and snakelike test electrode
During the reliability testing puncturing, when inventor finds the breakdown voltage that should obtain of snakelike test electrode pair of different length or punctures
Between different.
For this reason, inventor is through experiment test, find this mainly due to the snakelike test corresponding electricity of electrode diverse location
Pressure difference causes.When prior art is tested to test structure as shown in Figure 1, only the two of described snakelike test electrode
End applies test voltage simultaneously, or applies test voltage, other end floating in one end of snakelike test electrode, in theory entirely
The magnitude of voltage of snakelike test electrode should be all identical, but tested due to two pectinations and can not keep away between electrode and snakelike test electrode
Exempt to have leakage current generation, the voltage at described snakelike test electrode two ends and the voltage in snakelike test electrode centre position can be led to
Differ.Refer to Fig. 2, dotted line therein is that two pectinations test electrodes are grounded, at the two ends of described snakelike test electrode together
When apply 18V test voltage when, described snakelike test electrode diverse location voltage distribution curves.Solid line therein is two
Pectination test electrode ground connection, applies the test voltage of 18V in one end of described snakelike test electrode, described snakelike test electrode
Other end floating, the voltage distribution curves of described snakelike test electrode diverse location.When the length of snakelike test electrode is longer, institute
State snakelike test electrode minimum voltage value lower so that diverse location pectination test electrode and snakelike test electrode between
Test voltage differs, therefore the corresponding breakdown voltage of snakelike test electrode of different length, breakdown time different so that
Final test result is inaccurate.
For this reason, embodiments providing a kind of semi-conductor test structure and detection method, described semiconductor test knot
The two ends of the snakelike test electrode of structure are connected with the first test lead, and the centre position of described snakelike test electrode is tested with second
End is connected, and described first test lead and the second test lead are connected so that each position of described snakelike test electrode
Voltage all identical it is not necessary to consider the impact to final testing result for the length of snakelike test electrode, thus improve test knot
The accuracy of fruit.
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
First embodiment of the invention provide firstly a kind of semi-conductor test structure, refer to Fig. 3 and Fig. 4, and Fig. 3 is this
The structural representation of the semi-conductor test structure of bright embodiment, Fig. 4 is semi-conductor test structure as shown in Figure 3 along AA ' line
Cross-sectional view, specifically includes：Substrate 100, positioned at the first metal layer 110 on described substrate 100 surface, positioned at described
One metal level 110 and first interlayer dielectric layer 120 on substrate 100 surface, positioned at described the first metal layer 110 surface and run through
First conductive plunger 130 of one interlayer dielectric layer 120；The first pectination test positioned at described first interlayer dielectric layer 120 surface
It is relative that electrode 140 and the second pectination test electrode 150, described first pectination test electrode 140 and the second pectination test electrode 150
Arrange and described first pectination test electrode 140 is staggered mutually embedding with the comb metal wire of the second pectination test electrode 150；Positioned at institute
State the first pectination and test the snakelike test electrode 160 that electrode 140 and the second pectination are tested between electrode 150, described snakelike test
Are tested electrode 140 by the first pectination for electrode 160 and the comb metal wire of the second pectination test electrode 150 is isolated, and described snake
Shape test electrode 160 is located at described first conductive plunger 130 surface, described first conductive plunger 130 and snakelike test electrode 160
Position corresponding；The first metal layer 110 that described first conductive plunger 130 is connected is as the of snakelike test electrode 160
One test lead S1 and the second test lead S2, wherein, with described snakelike test electrode 160 two ends the first conductive plunger 130 phase
The first metal layer 110 connecting is as the first test lead S1, conductive with the first of the centre position of described snakelike test electrode 160
The first metal layer 110 that connector 130 is connected as the second test lead S2 so that described snakelike test electrode 160 two ends with
First test lead S1 is connected, and the centre position of described snakelike test electrode 160 is connected with the second test lead S2, and described the
One test lead S1 and the second test lead S2 is connected by the first metal layer 110；Using described first interlayer dielectric layer 120 by institute
State snakelike test electrode 160 and test electrode 150 electric isolation with the first pectination test electrode 140 of both sides, the second pectination.
Specifically, described substrate 100 at least includes Semiconductor substrate, and described substrate 100 can also be included positioned at semiconductor
The semiconductor devices of substrate surface and one or more layers interlayer dielectric layer, described Semiconductor substrate can be silicon substrate, germanium lining
Bottom, silicon-on-insulator substrate etc., can have metal interconnection structure in described interlayer dielectric layer.In the present embodiment, described base
Bottom 100 surface is formed with the first metal layer 110.
Described the first metal layer 110, the first pectination test electrode 140, the second pectination test electrode 150 and snakelike test electricity
The material of pole 160 is aluminium or copper, and the material of described first conductive plunger 130 is tungsten or copper.
Described first interlayer dielectric layer 120 includes at least one of which interlayer dielectric layer, and described first interlayer dielectric layer 120
Material is silica or low-K dielectric material etc., and described low-K dielectric material is less than 3.9 dielectric material for dielectric constant.
In the present embodiment, described first pectination test electrode 140, the second pectination test electrode 150 and snakelike test electricity
Spacing between pole 160 is the minimum spacing between the interconnection line of current design specified by rules, such that it is able to partly be led using described
Body examination tries the breakdown characteristics between the interconnection line under structured testing minimum spacing.In other embodiments, described first pectination test
The spacing that electrode, the second pectination are tested between electrode and snakelike test electrode suitably can also be selected according to test needs,
Here is not especially limited.
In the present embodiment, described first pectination test electrode 140, the second pectination test electrode 150 individually apply to test
Voltage.In other embodiments, after described first pectination test electrode, the second pectination test electrode can also be electrically connected simultaneously
Apply test voltage.
In the present embodiment, the position that described first conductive plunger 130 is contacted with snakelike test electrode 160 is uniformly distributed
In the described snakelike lower surface testing electrode 160 so that the voltage of snakelike each position of test electrode is all equal.In other enforcements
In example, described first conductive plunger can also be non-uniformly distributed in described snakelike survey with the position of snakelike test contact electrode
The lower surface of examination electrode.
In the present embodiment, described first test lead S1 and the second test lead S2 is connected by the first metal layer 110, makes
The magnitude of voltage obtaining described first test lead S1 and the second test lead S2 is identical.Due to described second test lead S2 and snakelike test electricity
The centre position of pole 160 is connected, and described first test lead S1 is connected with the two ends of snakelike test electrode 160, therefore described
The voltage of snakelike test electrode 160 diverse location is all identical it is not necessary to the length of consideration snakelike test electrode 160 is to final test
The impact of result, thus improve the accuracy of test result.
In other embodiments, refer to Fig. 5, be the structural representation of the semi-conductor test structure of another embodiment of the present invention
Figure, can also have diode 170, the anode of described diode 170 between described first test lead S1 and the second test lead S2
It is connected with the first test lead S1, the negative electrode of described diode 170 is connected with the second test lead S2.Because diode has list
To on state characteristic, when the voltage of described first test lead S1 is higher than described first pectination test electrode 140 and the test of the second pectination
During the voltage of electrode 150, even if the voltage in snakelike test electrode 160 centre position is likely lower than snakelike test electrode 160 two ends
Voltage, that is, the voltage of the second test lead S2 be likely lower than the voltage of the first test lead S1, but because diode 170 can be because apply
Turn on added with forward voltage, therefore finally the voltage of described second test lead S2 is equal with the voltage of the first test lead S1, snake
The voltage that shape tests electrode 160 centre position is equal with the voltage at snakelike test electrode 160 two ends.
And the voltage working as described first test lead S1 is less than described first pectination test electrode 140 and the second pectination test electricity
During the voltage of pole 150, the voltage due to snakelike test electrode 160 centre position can be higher than the electricity at snakelike test electrode 160 two ends
Pressure, that is, the voltage of the second test lead S2 is higher than the voltage of the first test lead S1, and diode 170 can be because being applied with backward voltage
Cut-off, therefore finally the voltage of described second test lead S2 is unequal with the voltage of the first test lead S1, snakelike test electrode 160
The voltage in centre position is unequal with the voltage at snakelike test electrode 160 two ends, then the semi-conductor test structure phase of the present embodiment
When the test structure in prior art without the second test lead.Therefore, using one semi-conductor test structure, pass through
Control the difference of applied test voltage, the voltage that can form snakelike test electrode 160 diverse location respectively is identical or not
Two kinds of same test structures, detect the breakdown characteristics of described two test structures respectively, such that it is able to compare snakelike test electricity
Whether everywhere the voltage of the pole 160 equal influence degree to test structure, be conducive to improving the survey of described semi-conductor test structure
Examination accuracy.
In another embodiment, refer to Fig. 6 and Fig. 7, Fig. 6 is the semi-conductor test structure of another embodiment of the present invention
Structural representation, Fig. 7 is the semi-conductor test structure as shown in Figure 6 cross-sectional view along BB ' line, specifically includes：Base
Bottom 200, positioned at first interlayer dielectric layer 220 on described substrate 200 surface, positioned at described first interlayer dielectric layer 220 surface
First pectination test electrode 240 and the second pectination test electrode 250, described first pectination test electrode 240 and the second pectination are surveyed
Examination electrode 250 is oppositely arranged and described first pectination tests electrode 240 and the second pectination tests the comb metal wire friendship of electrode 250
Misphase is embedding；Test the snakelike test electrode 260 between electrode 240 and the second pectination test electrode 250 positioned at described first pectination,
Are tested electrode 240 by the first pectination for described snakelike test electrode 260 and the comb metal wire of the second pectination test electrode 250 is separated by
From；Positioned at second interlayer dielectric layer 280 on described first interlayer dielectric layer 220 surface, positioned at described snakelike test electrode 260 table
Face and run through the second conductive plunger 230 of described second interlayer dielectric layer 280, positioned at described second conductive plunger 230 and second
The second metal layer 210 on interlayer dielectric layer 280 surface, described second conductive plunger 230 and the snakelike position phase testing electrode 260
Corresponding；The second metal layer 210 being connected with described second conductive plunger 230 is as the first test of snakelike test electrode 260
End S1 and the second test lead S2, wherein, is connected with second conductive plunger 230 at the two ends of described snakelike test electrode 260
Second metal layer 210 is as the first test lead S1, the second conductive plunger with the centre position of described snakelike test electrode 260
The second metal layer 210 that 230 are connected as the second test lead S2 so that described snakelike test electrode 260 two ends and first
Test lead S1 is connected, and the centre position of described snakelike test electrode 260 is connected with the second test lead S2, and described first survey
Examination end S1 and the second test lead S2 is connected by second metal layer 210；Using described first interlayer dielectric layer 220 by described snake
Shape is tested electrode 260 and is tested electrode 250 electric isolation with the first pectination test electrode 240 of both sides, the second pectination.
In other embodiments, refer to Fig. 8, be the structural representation of the semi-conductor test structure of another embodiment of the present invention
Figure, can also have diode 270, the anode of described diode 270 between described first test lead S1 and the second test lead S2
It is connected with the first test lead S1, the negative electrode of described diode 270 is connected with the second test lead S2.Partly led using one
Body test structure, by controlling the difference of applied test voltage, can form snakelike test electrode 260 diverse location respectively
The identical or different two kinds of test structures of voltage, detect the breakdown characteristics of described two test structures respectively, such that it is able to than
Relatively go out the voltage whether everywhere equal influence degree to test structure of snakelike test electrode 260, be conducive to improving and described partly lead
The testing precision of body test structure.
Second embodiment of the invention additionally provides a kind of test using the semi-conductor test structure as shown in Fig. 3 or Fig. 6
Method, including：Test in described first test lead and the first pectination and apply test electricity between electrode, the second pectination test electrode
Pressure, carries out dielectric breakdown survey to described snakelike test electrode with the first pectination test electrode of both sides, the second pectination test electrode
Examination.
Described dielectric breakdown is tested and is and the dielectric breakdown of time correlation (TDDB) test, including two ways：Constant electricity
Pressure TDDB and ramp voltage TDDB.
When dielectric breakdown test is carried out using constant voltage TDDB, test electricity in described first test lead and the first pectination
Apply constant voltage, between measurement described two pectination test electrode and snakelike test electrode between pole, the second pectination test electrode
Leakage current, after the regular hour, when leakage current suddenly rises, two pectinations test electrodes and snakelike test electricity are described
Between pole, medium is breakdown, described apply constant voltage total time be breakdown time, using the length of described breakdown time
Test the breakdown characteristics between electrode and snakelike test electrode to characterize two pectinations.
When dielectric breakdown test is carried out using ramp voltage TDDB, test electricity in described first test lead and the first pectination
Apply ramp voltage, between measurement described two pectination test electrode and snakelike test electrode between pole, the second pectination test electrode
Leakage current, after the regular hour, when leakage current suddenly rises, two pectinations test electrodes and snakelike test electricity are described
Between pole, medium is breakdown, and the described ramp voltage making leakage current suddenly increase is two pectination test electrodes and snakelike test electricity
Breakdown voltage between pole, using the size of described breakdown voltage characterize two pectinations test electrodes and snakelike test electrode it
Between breakdown characteristics.
The first test lead due to the semi-conductor test structure as shown in Fig. 3 or Fig. 6 is joined directly together with the second test lead, right
First test lead and the voltage direction that the first pectination tests electrode, the second pectination is tested between electrode do not limit, and therefore, both may be used
By described first pectination test electrode, the second pectination test electrode ground connection, to apply positive puncturing in the first test lead and to test electricity
That presses or bear punctures test voltage it is also possible to apply positive hitting in described first pectination test electrode, the second pectination test electrode
Wear test voltage or negative puncture test voltage, the first test lead ground connection.Due to described first test lead and the second test lead phase
Connect, the voltage of each position of described snakelike test electrode is all equal it is not necessary to the length of consideration snakelike test electrode is to
The impact of whole test result is so that the breakdown voltage measured by semi-conductor test structure using the embodiment of the present invention can be more preferable
Breakdown voltage between adjacent interconnection line under simulation actual conditions, thus improve the accuracy of test result.
Third embodiment of the invention additionally provides another kind of survey using the semi-conductor test structure as shown in Fig. 5 or Fig. 8
Method for testing, including：
Test in described first test lead and the first pectination and apply positive test electricity between electrode, the second pectination test electrode
Pressure, so that diode current flow, tests electrode to described snakelike test electrode with the first pectination test electrode of both sides, the second pectination
Carry out dielectric breakdown test；
Test in described first test lead and the first pectination and apply negative test electricity between electrode, the second pectination test electrode
Pressure, so that diode cut-off, tests electrode, the second pectination test electrode to the first pectination of described snakelike test electrode and both sides
Carry out dielectric breakdown test；
Test result according to testing twice judge snakelike test electrode each position voltage identical to dielectric breakdown
The impact of test.
Specifically, described dielectric breakdown is tested and is and the dielectric breakdown of time correlation (TDDB) test, including two ways：
Constant voltage TDDB and ramp voltage TDDB, obtain the first comb of snakelike test electrode and both sides using the test of described dielectric breakdown
Shape tests electrode, the second pectination tests breakdown time and breakdown voltage between electrode.The described dielectric breakdown with time correlation
(TDDB) concrete grammar tested refer to the associated description in second embodiment, and therefore not to repeat here.
Because diode has one-way conduction characteristic, test electrode, the second comb in described first test lead and the first pectination
Apply positive test voltage, diode current flow, described positive test voltage specifically includes between shape test electrode：By described first
Pectination test electrode, the second pectination test electrode ground connection, the first test lead apply positive puncture test voltage, or described
What the first pectination test electrode, the second pectination test electrode applying were negative punctures test voltage, the first test lead ground connection.Due to two poles
Pipe turns on, and the voltage of the first test lead and the second test lead is equal, the voltage of each position of therefore described snakelike test electrode
All equal, now, the breakdown voltage being recorded using described semi-conductor test structure and the accuracy of breakdown time are higher.
And test in described first test lead and the first pectination and apply negative test between electrode, the second pectination test electrode
Voltage, diode ends, and described negative test voltage specifically includes：By described first pectination test electrode, the second pectination test
Electrode is grounded, and punctures test voltage what the first test lead applying was born, or in described first pectination test electrode, the second pectination
What test electrode applying was positive punctures test voltage, the first test lead ground connection.Due to diode cut-off, be only equivalent to described snakelike
The two ends of test electrode apply test voltage, due to snakelike test electrode and the first pectination test electrode, the second pectination test electricity
There is between pole leakage current, therefore, the voltage of each position of described snakelike test electrode is unequal, now, using described half
The breakdown voltage that conductor test structure records and the accuracy of breakdown time are relatively low.
By testing the breakdown voltage of acquisition and breakdown time described in comparison twice it can be determined that going out in snakelike test electrode
The whether identical impact to dielectric breakdown test of each position voltage.And each position electricity due to described snakelike test electrode
The test of the pressure whether identical impact to dielectric breakdown test is to carry out in same semi-conductor test structure, only need to change it
In several test leads test voltage, testing cost is relatively low.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from this
In the spirit and scope of invention, all can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope limiting is defined.
Claims (15)
1. a kind of semi-conductor test structure is it is characterised in that include：Substrate, positioned at the first inter-level dielectric of described substrate surface
Layer；Positioned at the first pectination test electrode and the second pectination test electrode of described first interlayer dielectric layer surface, described first comb
Shape test electrode and the second pectination test electrode are oppositely arranged and described first pectination test electrode and the second pectination test electrode
Comb metal wire interlock mutually embedding；Test electrode positioned at described first pectination and the second pectination tests the snakelike test between electrode
Electrode, are tested electrode by the first pectination for described snakelike test electrode and the comb metal wire of the second pectination test electrode is isolated,
And the first pectination test electrode of described snakelike test electrode and both sides, the second pectination test electrode electric isolation；Described snakelike
The two ends of test electrode are connected with the first test lead, and the centre position of described snakelike test electrode is connected with the second test lead
Connect, and described first test lead and the second test lead are connected.
2. semi-conductor test structure as claimed in claim 1 is it is characterised in that also include：Positioned at described substrate and ground floor
Between the first metal layer between dielectric layer, positioned at the first metal layer surface and run through the first of the first interlayer dielectric layer and conductive insert
Plug, described snakelike test electrode is located at the first conductive plunger surface and described first conductive plunger corresponds to snakelike test electrode
Position, with the first metal layer that is connected of the first conductive plunger at described snakelike test electrode two ends as the first test lead, with
The first metal layer that first conductive plunger in described snakelike test electrode centre position is connected is as the second test lead.
3. semi-conductor test structure as claimed in claim 2 is it is characterised in that described first conductive plunger is electric with snakelike test
The position that pole contacts is uniformly distributed in described snakelike test electrode surface.
4. semi-conductor test structure as claimed in claim 1 is it is characterised in that also include：Positioned at described first inter-level dielectric
Second interlayer dielectric layer of layer surface, positioned at described snakelike test electrode surface and run through the second of described second interlayer dielectric layer
Conductive plunger and be located at described second conductive plunger, the second metal layer of the second interlayer dielectric layer surface, described second conductive inserts
Plug is corresponding to the position of snakelike test electrode, the second gold medal being connected with second conductive plunger at described snakelike test electrode two ends
Belong to layer as the first test lead, the second metal layer being connected with second conductive plunger in described snakelike test electrode centre position
As the second test lead.
5. semi-conductor test structure as claimed in claim 4 is it is characterised in that described second conductive plunger is electric with snakelike test
The position that pole contacts is uniformly distributed in described snakelike test electrode surface.
6. semi-conductor test structure as claimed in claim 1 is it is characterised in that also include：Positioned at described first test lead,
Diode between two test leads, the anode of described diode is connected with the first test lead, the negative electrode of described diode and
Two test leads are connected.
7. semi-conductor test structure as claimed in claim 1 is it is characterised in that described first pectination tests electrode, the second comb
Shape test electrode is electrically connected.
8. semi-conductor test structure as claimed in claim 1 is it is characterised in that described first pectination tests electrode, the second comb
It is copper or aluminium that shape tests electrode and the material of snakelike test electrode.
9. semi-conductor test structure as claimed in claim 1 is it is characterised in that described first pectination tests electrode, the second comb
The spacing that shape tests between electrode and snakelike test electrode is the minimum spacing between the interconnection line of current design specified by rules.
10. a kind of method of testing using semi-conductor test structure as claimed in claim 1 is it is characterised in that include：
Test in described first test lead and the first pectination and apply test voltage between electrode, the second pectination test electrode, to institute
State snakelike test electrode and carry out dielectric breakdown test with the first pectination test electrode of both sides, the second pectination test electrode.
11. method of testings as claimed in claim 10 it is characterised in that described dielectric breakdown test include constant voltage and when
Between related dielectric breakdown test and ramp voltage and time correlation dielectric breakdown test.
A kind of 12. method of testings using semi-conductor test structure as claimed in claim 6 are it is characterised in that include：
Test in described first test lead and the first pectination and apply positive test voltage between electrode, the second pectination test electrode,
Make diode current flow, described snakelike test electrode is entered with the first pectination test electrode of both sides, the second pectination test electrode
Row dielectric breakdown is tested；
Test in described first test lead and the first pectination and apply negative test voltage between electrode, the second pectination test electrode,
Diode is ended, described snakelike test electrode is entered with the first pectination test electrode of both sides, the second pectination test electrode
Row dielectric breakdown is tested；
Test result according to testing twice judge snakelike test electrode each position voltage identical to dielectric breakdown test
Impact.
13. method of testings as claimed in claim 12 are it is characterised in that the test of described dielectric breakdown includes：Constant voltage with
The dielectric breakdown test of time correlation and the dielectric breakdown test of ramp voltage and time correlation.
14. method of testings as claimed in claim 12 are it is characterised in that test electricity in described first test lead and the first pectination
Applying positive test voltage between pole, the second pectination test electrode is：Apply positive puncturing in described first test lead and test electricity
Pressure, described first pectination test electrode, the second pectination test electrode ground connection；Or described first test lead ground connection, described the
What one pectination test electrode, the second pectination test electrode applying were negative punctures test voltage.
15. method of testings as claimed in claim 12 are it is characterised in that test electricity in described first test lead and the first pectination
Applying negative test voltage between pole, the second pectination test electrode is：Apply negative puncturing in described first test lead and test electricity
Pressure, described first pectination test electrode, the second pectination test electrode ground connection；Or described first test lead ground connection, described the
What one pectination test electrode, the second pectination test electrode applying were positive punctures test voltage.
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| CN107346751B (en) * | 2016-05-05 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | Test structure, forming method thereof and test method |
| CN107144744B (en) * | 2017-04-25 | 2018-07-20 | 云南大学 | A kind of electrode system measuring the electron transport performance in nanometer sized materials/structure |
| CN113363241B (en) * | 2021-05-13 | 2023-03-24 | 武汉新芯集成电路制造有限公司 | Test structure and test method |
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| US6281570B1 (en) * | 1999-01-26 | 2001-08-28 | Hitachi Cable, Ltd. | Tape carrier for BGA and semiconductor device using the same |
| CN102130096A (en) * | 2010-01-15 | 2011-07-20 | 中国科学院微电子研究所 | Test structure and test method for coupling capacitance of metal redundant fillers in integrated circuit |
| CN102200686A (en) * | 2010-03-26 | 2011-09-28 | 中芯国际集成电路制造(上海)有限公司 | Mask layout and method for monitoring process window for chemical mechanical polishing by using the same |
| CN102891134A (en) * | 2011-07-18 | 2013-01-23 | 中国科学院微电子研究所 | Plasma damage test structure based on metal oxide semiconductor (MOS) capacitor |
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| US6281570B1 (en) * | 1999-01-26 | 2001-08-28 | Hitachi Cable, Ltd. | Tape carrier for BGA and semiconductor device using the same |
| CN102130096A (en) * | 2010-01-15 | 2011-07-20 | 中国科学院微电子研究所 | Test structure and test method for coupling capacitance of metal redundant fillers in integrated circuit |
| CN102200686A (en) * | 2010-03-26 | 2011-09-28 | 中芯国际集成电路制造(上海)有限公司 | Mask layout and method for monitoring process window for chemical mechanical polishing by using the same |
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