CN112864131A - Electromigration test structure and electromigration test method - Google Patents
Electromigration test structure and electromigration test method Download PDFInfo
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The invention provides an electromigration test structure and an electromigration test method, wherein the electromigration test structure comprises: a metal interconnection structure to be tested; the first sensing electrode is electrically connected with one end of the metal interconnection structure to be detected; the second sensing electrode is electrically connected with the other end of the metal interconnection structure to be detected; the third sensing electrode is at least electrically connected with the position between two ends of the metal interconnection structure to be detected; the first loading electrode is electrically connected with the first sensing electrode; and the second loading electrode is electrically connected with the second sensing electrode. The technical scheme of the invention can avoid influencing the wiring design of the chip area, can carry out wafer-level rapid test and can rapidly judge the specific position of electromigration failure.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit manufacturing, and more particularly, to an electromigration test structure and an electromigration test method.
Background
In recent years, as semiconductor devices have become smaller and smaller in size and higher in integration, research on reliability of semiconductor devices has become more and more important, and an Electro-Migration (EM) phenomenon is one of main failure mechanisms affecting reliability. The electromigration phenomenon refers to a phenomenon that when an integrated circuit in a semiconductor device works, current passes through the metal interconnection line, and metal ions generate substance transportation under the action of the current, namely, the metal ions move from a negative electrode to a positive electrode under the pushing of 'electronic wind', so that a cavity (Void) appears at the negative electrode part of the metal interconnection line due to the electromigration phenomenon, and then a circuit is broken, and a Hillock (Hillock) appears at the positive electrode part due to the electromigration phenomenon, so that a circuit is short-circuited.
The electromigration test is a test in which the resistance of an electromigration test structure is monitored over time at high temperatures and high currents. In the prior art, the electromigration test usually employs kelvin four-wire resistance (kelvin four-wire sensing), and the electromigration test structure includes two loading electrodes and two sensing electrodes. Taking the electromigration test structure shown in fig. 1a to 1b as an example, the electromigration test structure includes a metal interconnection structure to be tested, a connecting metal line 13 and a plurality of pads, which are electrically connected to each other, the metal interconnection structure to be tested includes a metal layer 11 to be tested and conductive plugs 12 to be tested located at two ends of the metal layer 11 to be tested, and each conductive plug 12 to be tested is electrically connected to one end of a connecting metal line 13; the plurality of pads include a first load electrode F11, a first sensing electrode S11, a second load electrode F21, a second sensing electrode S21, a first pad 14, and a second pad 15, but may include other pads not shown. During testing, a test current is applied to the metal interconnection structure to be tested through the first loading electrode F11 or the second loading electrode F21, the metal interconnection structure to be tested is controlled to generate high temperature through the test current so as to accelerate the electromigration degradation phenomenon, and after the preset test time, whether the change value of the resistance between the first sensing electrode S11 and the second sensing electrode S21 before and after the test exceeds the failure value is measured so as to determine whether the metal interconnection structure to be tested has electromigration failure.
Because the dicing street area a1 contains a plurality of bonding pads, a probe card matched with the layout of the bonding pads can be used to perform wafer level (wafer level) testing on the device during electromigration testing; however, since the metal layer to be tested 11, the conductive plug to be tested 12, and a portion of the connecting metal line 13 are located in the chip region, and another portion of the connecting metal line 13 and the plurality of pads are located in the scribe lane region a1, the electromigration test structure shown in fig. 1a and 1b occupies the area of the chip region, which affects the wiring design of the chip region, and further affects the performance of the chip.
Especially for cost reasons, the width of the scribe line region is continuously reduced (for example, from 90 μm to 45 μm), which results in that the electromigration test structure occupies more chip region area, affects the wiring design of the chip region, and further affects the performance of the device; if the electromigration test structure is compressed to the scribe line region and does not occupy the chip region any more, part of the pads (e.g., the first pad 14 and the second pad 15) in the scribe line region a1 need to be removed, which may result in that the probe card cannot be used for wafer-level rapid test (because the hard material of the structure below the removed pad may damage the probe on the probe card), and only package-level test may be performed, which may result in extra package cost and increase of the cycle time (production cycle); in addition, the existing electromigration test structure can only obtain the change condition of the total resistance value of the whole metal interconnection structure to be tested before and after the test, the specific failure position on the metal interconnection structure to be tested cannot be directly judged through an electrical test, the electromigration failure position can only be confirmed through multiple times of slice analysis, and the efficiency is low.
Therefore, it is an urgent need to solve the above-mentioned problems by improving the conventional electromigration test structure.
Disclosure of Invention
The invention aims to provide an electromigration test structure and an electromigration test method, which can avoid influencing the wiring design of a chip area, can carry out wafer-level rapid test and can rapidly judge the specific position of electromigration failure.
In order to achieve the above object, the present invention provides an electromigration test structure located in a scribe line region, the electromigration test structure comprising:
a metal interconnection structure to be tested;
the first sensing electrode is electrically connected with one end of the metal interconnection structure to be detected;
the second sensing electrode is electrically connected with the other end of the metal interconnection structure to be detected;
the third sensing electrode is at least electrically connected with the position between two ends of the metal interconnection structure to be detected;
the first loading electrode is electrically connected with the first sensing electrode; and the number of the first and second groups,
and the second loading electrode is electrically connected with the second sensing electrode.
Optionally, the metal interconnection structure to be tested includes a metal layer to be tested and conductive plugs to be tested located at two ends of the metal layer to be tested, and the first sensing electrode and the second sensing electrode are electrically connected to the conductive plugs to be tested at two ends of the metal layer to be tested, respectively.
Optionally, at least one layer of test metal layer and test conductive plug are connected to the lower side of each third sensing electrode, and one end of the test metal layer is electrically connected to at least the position between the two ends of the metal layer to be tested through the test conductive plug.
Optionally, the electromigration test structure includes two third sensing electrodes, each of the third sensing electrodes is connected to a test metal layer of one layer below, and one end of each of the test metal layers is electrically connected to the test conductive plug and the two ends of the metal layer to be tested.
Optionally, the electromigration test structure includes two third sensing electrodes, an upper first test metal layer and a lower third test metal layer are connected below a first third sensing electrode close to the first sensing electrode, one end of the first test metal layer is electrically connected to one end of the third test metal layer through a test conductive plug, and the other end of the third test metal layer is electrically connected to a conductive plug to be tested at one end of the metal layer to be tested; and a second testing metal layer on the upper layer and a fourth testing metal layer on the lower layer are connected below a second third sensing electrode close to the second sensing electrode, one end of the second testing metal layer is electrically connected with one end of the fourth testing metal layer through a testing conductive plug, and the other end of the fourth testing metal layer is electrically connected with the two ends of the metal layer to be tested through a testing conductive plug.
Optionally, the electromigration test structure further includes a plurality of connection metal lines, and the first sensing electrode and the second sensing electrode are electrically connected to the conductive plugs to be tested at two ends of the metal layer to be tested, the first loading electrode and the first sensing electrode, and the second loading electrode and the second sensing electrode through the connection metal lines, respectively.
Optionally, the at least one third sensing electrode is located between the first sensing electrode and the second sensing electrode, the first loading electrode is located on a side of the first sensing electrode away from the third sensing electrode, and the second loading electrode is located on a side of the second sensing electrode away from the third sensing electrode.
The invention also provides an electromigration test method, which comprises the following steps:
providing a test sample comprising the electromigration test structure of the present invention;
testing a change in resistance value between any two of the first, second and at least one third sense electrodes to obtain a plurality of resistance offset values;
determining whether each of the plurality of resistance offset values is greater than a preset failure value; and the number of the first and second groups,
and determining the electromigration failure position of the metal interconnection structure to be tested according to the resistance deviation value which is larger than the preset failure value.
Optionally, the step of testing a change in resistance value between any two of the first sensing electrode, the second sensing electrode, and the at least one third sensing electrode comprises:
inputting current by using the first loading electrode or the second loading electrode or using the first loading electrode and the second loading electrode successively as input ends, and testing voltages at the first sensing electrode, the second sensing electrode and the at least one third sensing electrode to obtain a plurality of initial voltage values;
dividing a difference between any two of the plurality of initial voltage values by an input current value to obtain a plurality of initial resistance values;
continuing to input current to the first loading electrode or the second loading electrode or successively using the first loading electrode and the second loading electrode as input ends, and after a preset test time, testing voltages at the first sensing electrode, the second sensing electrode and the at least one third sensing electrode to obtain a plurality of test voltage values;
dividing a difference between any two of the plurality of test voltage values by the input current value to obtain a plurality of test resistance values; and the number of the first and second groups,
calculating a variation of the plurality of test resistance values based on the corresponding plurality of initial resistance values to obtain a plurality of resistance offset values.
Optionally, the first loading electrode is used as an input end, and the second loading electrode is grounded; or, the second loading electrode is used as an input end, and the first loading electrode is grounded; or, the first loading electrode and the second loading electrode are sequentially used as input ends, and one end which is not used as the input end is grounded.
Optionally, the step of determining the electromigration failure position of the metal interconnect structure to be tested according to the resistance deviation value greater than the preset failure value includes: and determining the position between the two sensing electrodes corresponding to the resistance deviation value larger than the preset failure value as the electromigration failure position of the metal interconnection structure to be tested.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the electromigration test structure is positioned in the cutting channel area and comprises a first sensing electrode electrically connected with one end of the metal interconnection structure to be tested, a second sensing electrode electrically connected with the other end of the metal interconnection structure to be tested, at least one third sensing electrode electrically connected with the position between two ends of the metal interconnection structure to be tested, a first loading electrode electrically connected with the first sensing electrode, and a second loading electrode electrically connected with the second sensing electrode, so that the wiring design of a chip area can be prevented from being influenced, wafer-level rapid test can be carried out, and the specific position of electromigration failure can be rapidly judged.
2. According to the electromigration test method, the test sample comprising the electromigration test structure is provided, so that the specific failure position can be obtained by analyzing the electrical data, and the speed of confirming the electromigration failure position is improved; and moreover, the wafer-level rapid test can be performed, and the cost of the packaging-level test is saved.
Drawings
FIG. 1a is a schematic diagram of a prior art electromigration test structure viewed from above;
FIG. 1b is a cross-sectional view of the electromigration test structure shown in FIG. 1a taken along direction AA';
FIG. 2a is a schematic diagram illustrating a top view of an electromigration test structure according to a first embodiment of the present invention;
FIG. 2b is a cross-sectional view of the electromigration test structure shown in FIG. 2a along direction BB';
FIG. 3a is a schematic diagram illustrating a top view of an electromigration test structure according to a second embodiment of the present invention;
FIG. 3b is a cross-sectional view of the electromigration test structure shown in FIG. 3a taken along the direction CC';
FIG. 4a is a schematic diagram illustrating a top view of an electromigration test structure according to a third embodiment of the present invention;
FIG. 4b is a cross-sectional view of the electromigration test structure shown in FIG. 4a taken along direction DD';
FIG. 5 is a flowchart illustrating an electromigration test method according to an embodiment of the invention.
Wherein the reference numerals of figures 1a to 5 are as follows:
11-a metal layer to be detected; 12-a conductive plug to be tested; 13-connecting metal wires; 14-a first pad; 15-a second pad; f11-first load electrode; f21-second load electrode; s11 — a first sensing electrode; s21 — a second sensing electrode; a1-cutting street area; 21-a metal layer to be detected; 22-conductive plug to be tested; 231-a first test metal layer; 232-a second test metal layer; 233-a third test metal layer; 234-a fourth test metal layer; 241-a first test conductive plug; 242 — a second test conductive plug; 243-third test conductive plug; 25-connecting metal lines; f12-first load electrode; f22-second load electrode; s12 — a first sensing electrode; s22 — a second sensing electrode; s32, S42-third sense electrode; a2 — cutting street area.
Detailed Description
To further clarify the objects, advantages and features of the present invention, the electromigration test structure and the electromigration test method according to the present invention are described in further detail below. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
An embodiment of the present invention provides an electromigration test structure located in a scribe lane area a2, where the electromigration test structure includes a to-be-tested metal interconnection structure, a first sensing electrode S12, a second sensing electrode S22, at least one third sensing electrode, a first loading electrode F12, and a second loading electrode F22, and the first sensing electrode S12 is electrically connected to one end of the to-be-tested metal interconnection structure; the second sensing electrode S22 is electrically connected to the other end of the metal interconnection structure to be tested; the at least one third sensing electrode is at least electrically connected with the position between the two ends of the metal interconnection structure to be detected; the first loading electrode F12 is electrically connected to the first sensing electrode S12; the second loading electrode F22 is electrically connected to the second sensing electrode S22.
The electromigration test structure provided in this embodiment is described in detail with reference to fig. 2a to 4b, wherein the substrate, the dielectric layer and the chip region are not shown in fig. 2a to 4 b.
The electromigration test structure is located in a scribe line region A2, the scribe line region A2 is located at the periphery of the chip region, and a chip can be obtained after dicing along the scribe line region A2. The electromigration test structure does not occupy the area of the chip area, and avoids influencing the wiring design of the chip area, thereby avoiding influencing the performance of the chip and increasing the production cost.
The metal interconnection structure to be tested is located in a dielectric layer on the substrate of the scribe lane area a2, and the first sensing electrode S12, the second sensing electrode S22, the at least one third sensing electrode, the first loading electrode F12, and the second loading electrode F22 may be located on a top surface of the dielectric layer, so that a probe on a probe card can be used to contact the first sensing electrode S12, the second sensing electrode S22, the at least one third sensing electrode, the first loading electrode F12, and the second loading electrode F22 to perform wafer-level testing, thereby increasing testing speed, reducing cycle time (production cycle), and avoiding cost increase caused by testing after packaging.
The metal interconnection structure to be tested comprises a metal layer 21 to be tested and conductive plugs 22 to be tested positioned at two ends of the metal layer 21 to be tested. The conductive plug 22 to be tested is located above two ends of the metal layer 21 to be tested, and the conductive plug 22 to be tested may have a one-layer structure, a two-layer structure, or more than two layers. As shown in fig. 2b and fig. 3b, a layer of the conductive plug 22 to be tested is formed above two ends of the metal layer 21 to be tested.
The first sensing electrode S12 is electrically connected to one end of the metal interconnection structure to be tested; the second sensing electrode S22 is electrically connected to the other end of the metal interconnection structure to be tested. Specifically, the first sensing electrode S12 and the second sensing electrode S22 are electrically connected to the conductive plug 22 to be tested on two ends of the metal layer to be tested 21, respectively.
The at least one third sensing electrode is electrically connected to at least a position between two ends of the metal interconnection structure to be tested, that is, the at least one third sensing electrode is electrically connected to at least a position between two ends of the metal layer to be tested 21. The at least one third sensing electrode may be located between the first sensing electrode S12 and the second sensing electrode S22, for example, two third sensing electrodes S32 and S42 in fig. 3 a-4 b are located between the first sensing electrode S12 and the second sensing electrode S22, and a first one of the third sensing electrodes S32 is close to the first sensing electrode S12, and a second one of the third sensing electrodes S42 is close to the second sensing electrode S22.
The first loading electrode F12 is electrically connected to the first sensing electrode S12, and the first loading electrode F12 is located on a side of the first sensing electrode S12 away from the first third sensing electrode S32.
The second loading electrode F22 is electrically connected to the second sensing electrode S22, and the second loading electrode F22 is located on a side of the second sensing electrode S22 away from the second third sensing electrode S42.
The electromigration test structure further includes a plurality of connection metal lines 25, and the first sensing electrode S12 and the second sensing electrode S22 are electrically connected to the conductive plugs 22 to be tested at two ends of the metal layer 21 to be tested, the first loading electrode F12 is electrically connected to the first sensing electrode S12, and the second loading electrode F22 is electrically connected to the second sensing electrode S22 through the connection metal lines 25.
At least one layer of test metal layer and test conductive plug are connected below each third sensing electrode, and one end of each test metal layer is electrically connected with the position between two ends of the metal layer to be tested 21 at least through the test conductive plug.
The connecting metal lines 25 are connected in multiple layers below the first loading electrode F12, the first sensing electrode S12, the second sensing electrode S22 and the second loading electrode F22, the connecting metal lines 25 in adjacent upper and lower layers are electrically connected through a conductive plug (not shown), the first loading electrode F12, the first sensing electrode S12, the second sensing electrode S22 and the second loading electrode F22 are electrically connected with the connecting metal line 25 below through a conductive plug (not shown), and the third sensing electrode is electrically connected with the test metal layer below through a conductive plug (not shown).
If the conductive plug 22 to be tested has a structure of at least two layers, the adjacent upper and lower layers of the conductive plug 22 to be tested can be electrically connected through the connection metal wire 25 or the test metal layer. As shown in fig. 4b, two layers of the conductive plugs 22 to be tested are formed above two ends of the metal layer 21 to be tested, the upper and lower layers of the conductive plugs 22 to be tested on one end of the metal layer 21 to be tested close to the second sensing electrode S22 are electrically connected through a connecting metal line 25, and the upper and lower layers of the conductive plugs 22 to be tested on one end of the metal layer 21 to be tested close to the first sensing electrode S12 are electrically connected through a third testing metal layer 233.
In addition, each of the test metal layer and the test conductive plug connected to the lower portion of the third sensing electrode are used for performing auxiliary test judgment on a failure position of electromigration, and the number of layers of the test metal layer below the third sensing electrode, the connection position between the test metal layer and the test conductive plug, and the connection position between the test conductive plug and the two ends of the metal layer 21 to be tested may be adjusted, so that a plurality of different series circuits are formed among the third sensing electrode, the test metal layer and the test conductive plug below the third sensing electrode, different segment portions of the metal layer 21 to be tested, the first loading electrode F12, and the second loading electrode F22, thereby facilitating further judgment of the failure position of electromigration.
The electromigration test structure will be described in detail with reference to the embodiments shown in fig. 2a to 2b, fig. 3a to 3b, and fig. 4a to 4 b. It should be noted that, for convenience of description, a plurality of the third sensing electrodes are given different reference numerals, and a plurality of the test metal layers and a plurality of the test conductive plugs are given different names and reference numerals.
As shown in fig. 2a and 2b, the electromigration test structure includes a third sensing electrode S32, a layer of the test metal layer 231 is electrically connected below the third sensing electrode S32, one end of the test metal layer 231 is electrically connected to the two ends of the metal layer to be tested 21 below through a first test conductive plug 241, and the first test conductive plug 241 divides the portion between the two ends of the metal layer to be tested 21 (i.e., the portion between the conductive plugs to be tested 22 at the two ends) into two segments. The position of the metal layer to be tested 21 connected to the first test conductive plug 241 may be located at one end near the first sensing electrode S12, one end near the second sensing electrode S22, or near the middle of the metal layer to be tested 21. Compared with the electromigration test structure shown in fig. 1a and 1b, the electromigration test structure shown in fig. 2a and 2b can determine whether the failure position is located in a section of circuit between the conductive plug 22 to be tested close to the first sensing electrode S12 and the first test conductive plug 241 (including the conductive plug 22 to be tested and the first test conductive plug 241), or located in a section of circuit between the first test conductive plug 241 and the conductive plug 22 to be tested close to the second sensing electrode S22 (including the first test conductive plug 241 and the conductive plug 22 to be tested), so that the specific failure position can be quickly determined by analyzing the electrical data.
Or, as shown in fig. 3a and 3b, the electromigration test structure includes two third sensing electrodes, that is, a first third sensing electrode S32 and a second third sensing electrode S42, a first test metal layer 231 is electrically connected to a lower portion of the third sensing electrode S32, a second test metal layer 232 is electrically connected to a lower portion of the third sensing electrode S42, the first test metal layer 231 and the second test metal layer 232 may be located at a same layer at intervals, one end 241 of the first test metal layer 231 is electrically connected to two ends of the metal layer 21 to be tested through a first test conductive plug, one end of the second test metal layer 232 is electrically connected to two ends of the metal layer 21 to be tested through a second test conductive plug 242, and the first test conductive plug 241 and the second test conductive plug 242 are electrically connected to two ends of the metal layer 21 to be tested between the two ends of the metal layer to be tested The portion (i.e., the portion between the conductive plugs 22 to be tested at both ends) is divided into three segments. The position of the metal layer to be tested 21 electrically connected to the first testing conductive plug 241 and the second testing conductive plug 242 may be located at an end close to the first sensing electrode S12, an end close to the second sensing electrode S22, or a middle of the metal layer to be tested 21. Compared with the electromigration test structure shown in fig. 1a and 1b, the electromigration test structure shown in fig. 3a and 3b can determine whether the failure location is located in a section of the circuit between the conductive plug 22 to be tested and the first test conductive plug 241 near the first sensing electrode S12 (including the conductive plug 22 to be tested and the first test conductive plug 241), or located in a section of the circuit between the first test conductive plug 241 and the second test conductive plug 242 (including the first test conductive plug 241 and the second test conductive plug 242), or located in a section of the circuit between the second test conductive plug 242 and the conductive plug 22 to be tested near the second sensing electrode S22 (including the second test conductive plug 242 and the conductive plug 22 to be tested); in addition, compared with the electromigration test structure shown in fig. 2a and 2b, the metal layer 21 to be tested is divided into more sections, so that the specific failure position can be quickly determined by analyzing the electrical data.
Alternatively, as shown in fig. 4a and 4b, the electromigration test structure includes two third sensing electrodes, that is, a first third sensing electrode S32 and a second third sensing electrode S42, an upper first test metal layer 231 and a lower third test metal layer 233 are connected below the first third sensing electrode S32 close to the first sensing electrode S12, one end of the first test metal layer 231 is electrically connected to one end of the third test metal layer 233 through a first test conductive plug 241, the other end of the third test metal layer 233 is electrically connected to the conductive plug 22 to be tested at one end of the metal layer to be tested 21 (i.e., the end close to the first sensing electrode S12), and the other end of the third test metal layer 233 is further electrically connected to the first sensing electrode S12 through the conductive plug 22 to be tested above; an upper second test metal layer 232 and a lower fourth test metal layer 234 are connected to a lower portion of the second third sensing electrode S42 close to the second sensing electrode S22, one end of the second test metal layer 232 is electrically connected to one end of the fourth test metal layer 234 through a second test conductive plug 242, the other end of the fourth test metal layer 234 is electrically connected to a position between two ends of the metal layer to be tested 21 (i.e., a position between the conductive plugs to be tested 22 at two ends) through a third test conductive plug 243, and the third test conductive plug 243 divides a portion between two ends of the metal layer to be tested 21 into two parts. The position of the metal layer to be tested 21 electrically connected to the third testing conductive plug 243 may be located at an end close to the first sensing electrode S12, an end close to the second sensing electrode S22, or a middle of the metal layer to be tested 21. The electromigration test structure shown in fig. 4a and 4b can determine not only by analyzing the electrical data that the failure location is located in a section of the circuit between the conductive plug to be tested 22 close to the first sensing electrode S12 and the third test conductive plug 243 (including the conductive plug to be tested 22 and the third test conductive plug 243), but also in a section of the circuit between the third test conductive plug 243 and the conductive plug to be tested 22 close to the second sensing electrode S22 (including the third test conductive plug 243 and the conductive plug to be tested 22), i.e., which section of the metal layer to be tested 21 and the conductive plugs to be tested 22 at both ends are located with the electromigration failure location; in addition, it can also be determined whether the electromigration failure location is located in the third test metal layer 233, the first test conductive plug 241, the fourth test metal layer 234, and the second test conductive plug 242, so as to eliminate whether failure occurs at a location other than the metal layer to be tested 21 and the conductive plug to be tested 22, and further quickly and effectively analyze the failure location.
Therefore, as can be seen from the embodiments shown in fig. 2a to 2b, fig. 3a to 3b and fig. 4a to 4b, as the number of the third sensing electrodes, the number of the layers of the test metal layer under the third sensing electrodes and the number of the segments between the two ends of the metal layer to be tested 21, which are separated by the test conductive plug, increase, the number of the series circuits formed between the third sensing electrodes and the test metal layer and the test conductive plug under the third sensing electrodes and the different segment portions of the metal layer to be tested 21, the first loading electrode F12 and the second loading electrode F22 increases, so that the speed of determining the specific failure positions in the metal layer to be tested 21 and the conductive plug to be tested 22 increases faster and more accurately, the specific failure positions can be obtained through the analysis of the electrical data, and the specific failure positions obtained through the multiple slicing analysis can be avoided, thereby saving time and cost.
Moreover, for devices such as 3D-ICs with large-size complex structures, the Critical Dimension (CD) is larger, the occupied area of a device area is larger, the occupied area of a cutting track area is smaller, and the electromigration test structure is more effective for electromigration failure analysis of the large-size complex structures such as the 3D-ICs.
In summary, the electromigration test structure provided in the present invention is located in the scribe line region, and the electromigration test structure includes: a metal interconnection structure to be tested; the first sensing electrode is electrically connected with one end of the metal interconnection structure to be detected; the second sensing electrode is electrically connected with the other end of the metal interconnection structure to be detected; the third sensing electrode is at least electrically connected with the position between two ends of the metal interconnection structure to be detected; the first loading electrode is electrically connected with the first sensing electrode; and the second loading electrode is electrically connected with the second sensing electrode. The electromigration test structure can avoid influencing the wiring design of a chip area, can carry out wafer-level rapid test and can rapidly judge the specific position of electromigration failure.
Based on the same inventive concept, an embodiment of the present invention provides an electromigration test method, referring to fig. 5, as can be seen from fig. 5, the electromigration test method includes:
step S1, providing a test sample comprising the electromigration test structure of the present invention;
step S2 of testing a change in resistance value between any two of the first sensing electrode, the second sensing electrode, and the at least one third sensing electrode to obtain a plurality of resistance offset values;
step S3, determining whether each of the plurality of resistance offset values is greater than a preset invalid value;
and step S4, determining the electromigration failure position of the metal interconnection structure to be tested according to the resistance deviation value which is larger than the preset failure value.
The electromigration test method provided in this embodiment is described in detail with reference to fig. 2a to 4 b.
A test sample comprising the electromigration test structure of the present invention is provided, as per step S1.
The electromigration test structure is referred to the above detailed description of the electromigration test structure of the present invention, and is not described herein again.
In accordance with step S2, a change in resistance value between any two of the first sensing electrode S12, the second sensing electrode S22, and the at least one third sensing electrode is tested to obtain a plurality of resistance offset values.
The step of testing a change in resistance value between any two of the first sensing electrode S12, the second sensing electrode S22, and the at least one third sensing electrode comprises: firstly, inputting current by using the first loading electrode F12 or the second loading electrode F22 or the first loading electrode F12 and the second loading electrode F22 as input ends, and testing voltages at the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode to obtain a plurality of initial voltage values; then, dividing a difference between any two of the plurality of initial voltage values by the input current value to obtain a plurality of initial resistance values; then, continuing to input current to the first loading electrode F12 or the second loading electrode F22 or successively using the first loading electrode F12 and the second loading electrode F22 as input ends, controlling the metal interconnection structure to be tested to generate high temperature through the input current so as to accelerate the electromigration degradation phenomenon, and after a predetermined test time, testing voltages at the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode so as to obtain a plurality of test voltage values; dividing a difference between any two of the plurality of test voltage values by the input current value to obtain a plurality of test resistance values; then, the variation of the plurality of test resistance values based on the plurality of initial resistance values of the corresponding circuit is calculated to obtain a plurality of resistance offset values, namely the resistance offset values are equal to the difference value of the test resistance values and the initial resistance values of the corresponding circuit, and then the difference value is divided by the initial resistance values of the corresponding circuit.
Alternatively, in the step of testing the change of the resistance value between any two of the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode, the plurality of initial resistance values can be calculated by applying a voltage to the first loading electrode F12 or the second loading electrode F22 or the first loading electrode F12 and the second loading electrode F22 in sequence and measuring a current at the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode; and after current is input for a predetermined test time by using the first loading electrode F12 or the second loading electrode F22 or the first loading electrode F12 and the second loading electrode F22 in sequence as input ends, stopping inputting the current, calculating to obtain the plurality of test resistance values by applying voltage to the first loading electrode F12 or the second loading electrode F22 or the first loading electrode F12 and the second loading electrode F22 in sequence and measuring the current at the first sensing electrode S12, the second sensing electrode S22 and the at least one third sensing electrode, and further calculating to obtain the plurality of resistance offset values.
In addition, the predetermined test time may be estimated based on test conditions (including input current, etc.) and a preset failure value. The resistance can be measured after the preset test time so as to confirm the change condition of the resistance value after the test is finished; and, can also carry out real-time measurement to monitor the real-time change condition of resistance value along with test time.
Wherein, if the first loading electrode F12 is used as the input terminal, the second loading electrode F22 is grounded; or, if the second loading electrode F22 is used as the input terminal, the first loading electrode F12 is grounded; or, if the first loading electrode F12 and the second loading electrode F22 are used as input ends successively, one end which is not used as the input end is grounded, that is, the first loading electrode F12 is used as the input end and the second loading electrode F22 is grounded for testing, the second loading electrode F22 is used as the input end and the first loading electrode F12 is grounded for testing, the failure position of electromigration is judged through two tests, and the judgment result is more accurate.
The current I is input by using the first loading electrode F12 as an input terminalF12The calculation formulas of the initial resistance value and the test resistance value are described by taking the grounding of the second loading electrode F22 as an example, and it should be noted that, since the calculation formulas of the initial resistance value and the test resistance value of the same circuit are the same, the following calculation formulas are all unified as the calculation formulas describing the resistance values, the description of the two is not distinguished, and the initial voltage value and the test voltage value are all unified as the voltage values.
In FIGS. 2 a-2 b, the voltage values tested at the first sensing electrode S12, the second sensing electrode S22 and the third sensing electrode S32 are VS12、VS22And VS32Then, three resistance values can be obtained, and the total resistance value R ═ V of the metal interconnection structure to be testedS12-VS22)/IF12The resistance R1 of a segment of the circuit between the conductive plug 22 to be tested close to the first sensing electrode S12 and the first testing conductive plug 241 is (V)S12-VS32)/IF12A resistance value R2 of a section of circuit between the first test conductive plug 241 and the conductive plug 22 to be tested close to the second sensing electrode S22 is (V)S32-VS22)/IF12(ii) a In FIGS. 3 a-3 b, the voltage values tested at the first sensing electrode S12, the second sensing electrode S22, the first third sensing electrode S32 and the second third sensing electrode S42 are VS12、VS22、VS32And VS42Then, six resistance values can be obtained, and the total resistance value R ═ V of the metal interconnection structure to be testedS12-VS22)/IF12The resistance R1 of a segment of the circuit between the conductive plug 22 to be tested close to the first sensing electrode S12 and the first testing conductive plug 241 is (V)S12-VS32)/IF12The resistance R2 of a segment of the circuit between the conductive plug 22 to be tested close to the first sensing electrode S12 and the second testing conductive plug 242 is (V)S12-VS42)/IF12A resistance value R3 of a section of circuit between the first test conductive plug 241 and the conductive plug 22 to be tested close to the second sensing electrode S22 is (V)S32-VS22)/IF12A resistance value R4 of a section of circuit between the second testing conductive plug 242 and the conductive plug 22 to be tested close to the second sensing electrode S22 is (V)S42-VS22)/IF12A resistance value R5 of a section of the circuit between the first test conductive plug 241 and the second test conductive plug 242 is (V)S32-VS42)/IF12(ii) a In FIGS. 4 a-4 b, the voltage values tested at the first sensing electrode S12, the second sensing electrode S22, the third sensing electrode S32 and the third sensing electrode S42 are VS12、VS22、VS32And VS42Then, six resistance values can be obtained, and the total resistance value R ═ V of the metal interconnection structure to be testedS12-VS22)/IF12A resistance value R1 of a circuit between the conductive plug 22 under test on the third test metal layer 233 and the first test conductive plug 241 near the first sensing electrode S12 (V ═ V)S12-VS32)/IF12A resistance value R2 of a circuit between the conductive plug 22 under test on the third test metal layer 233 and the second test conductive plug 242 near the first sensing electrode S12 (V2 ═ V)S12-VS42)/IF12A resistance R3 of a section of the circuit between the first test conductive plug 241 and the conductive plug 22 to be tested on the connecting metal line 25 close to the second sensing electrode S22 (V ═ V)S32-VS22)/IF12A resistance R4 of a segment of the circuit between the second testing conductive plug 242 and the conductive plug 22 to be tested on the connecting metal line 25 near the second sensing electrode S22 (V ═ V)S42-VS22)/IF12A section of circuit between the first test conductive plug 241 and the second test conductive plug 242Resistance value of (V) R5 ═ VS32-VS42)/IF12。
In addition, if the current I is inputted by using the second loading electrode F22 as the input terminalF22The above formula for calculating the resistance value of each segment of the circuit shown in fig. 2a to 4b may be the difference between the voltage value measured at the sensing electrode close to the input end and the voltage value measured at the sensing electrode far from the input end, and then divided by the input current IF22。
After the initial resistance value and the test resistance value of the corresponding circuit are obtained by calculation according to the calculation formula of the resistance values, the total resistance offset value of the metal interconnection structure to be tested and the resistance offset values of the respective segmented circuits after the current of the predetermined time is input from the first loading electrode F12 or the second loading electrode F22 or from the first loading electrode F12 and the second loading electrode F22 in sequence can be obtained.
According to step S3, it is determined whether each of the plurality of resistance offset values is greater than a preset failure value.
The preset failure value may be defined according to an industry test standard of a wafer level test, and for example, the preset failure value may be 3%, that is, if the deviation of the test resistance value from the initial resistance value of the corresponding circuit exceeds 3%, the corresponding circuit fails.
According to step S4, the electromigration failure location of the metal interconnect structure to be tested is determined according to the resistance offset value greater than the preset failure value. Specifically, the position between the two sensing electrodes corresponding to the resistance deviation value larger than the preset failure value is determined as the electromigration failure position of the metal interconnection structure to be tested.
In the embodiment shown in fig. 2a to 2b, if only the resistance deviation value of the resistance value R1 is greater than the preset failure value, the failure position of electromigration is located at the conductive plug 22 to be tested close to the first sensing electrode S12, the first test conductive plug 241 or the portion of the circuit to be tested between the conductive plug 22 to be tested close to the first sensing electrode S12 and the first test conductive plug 241, instead of being located in a section of the circuit between the first test conductive plug 241 and the conductive plug 22 to be tested close to the second sensing electrode S22, the failure position is obtained by avoiding performing multiple slicing analyses on a whole section of the metal interconnect structure to be tested, so that the failure position obtained by analyzing the electrical data improves the speed of obtaining the failure position by the analysis; if only the resistance deviation value of the resistance value R2 is greater than the predetermined failure value, the corresponding failure position can be obtained in the same manner.
In the embodiment shown in fig. 3a to 3b, if only the resistance deviation value of the resistance value R1 is greater than the predetermined failure value, the failure position is located in a section of the circuit between the conductive plug to be tested 22 close to the first sensing electrode S12 and the first testing conductive plug 241; if the resistance deviation value of the resistance value R2 is greater than a predetermined failure value, the failure position is located in a section of the circuit between the conductive plug to be tested 22 close to the first sensing electrode S12 and the second testing conductive plug 242, and the resistance deviation value of the resistance value R1 is smaller than the predetermined failure value, and the resistance deviation value of the resistance value R5 is greater than the predetermined failure value, it is determined that the failure position is located in a section of the circuit between the first testing conductive plug 241 and the second testing conductive plug 242. Therefore, through the combined analysis of the resistance deviation value of the resistance value R1 to the resistance deviation value of the resistance value R5, it can be determined in which part of the circuit the failure position is located, compared with the embodiment shown in fig. 2a to 2b, the number of segments of the metal layer 21 to be tested is increased, the range of the failure position is further reduced, and the analysis speed is increased.
In the embodiments shown in fig. 4a to 4b, if only the resistance deviation value of the resistance value R1 is greater than the predetermined failure value, the failure location is located in the circuit between the conductive plug 22 under test on the third test metal layer 233 and the first test conductive plug 241 close to the first sensing electrode S12, that is, the failure location is excluded from being located in the metal layer 21 under test, and is located in other circuits; if the resistance deviation values of the resistance values R3 and R4 are greater than the predetermined failure value and the resistance deviation value of the resistance value R5 is smaller than the predetermined failure value, it can be excluded that the failure location is located in a section of the circuit between the first test conductive plug 241 and the second test conductive plug 242, but is located in a circuit between the third test conductive plug 243 and the conductive plug 22 to be tested located on the connecting metal line 25 near the second sensing electrode S22. Therefore, compared to the embodiments shown in fig. 2a to fig. 3b, it can also be determined whether the failure location is located in a structure (i.e., the third test metal layer 233 and the fourth test metal layer 234) other than the metal interconnect structure to be tested.
As can be seen from the above steps S1 to S4, since the test sample including the electromigration test structure provided by the present invention is used to perform test analysis on the electromigration condition, the failure location can be obtained by analyzing the electrical data, and the speed of determining the electromigration failure location can be increased; in addition, because the test is carried out through the loading electrode and the sensing electrode, the wafer level test can be carried out by adopting the probe card, the test speed is improved, and the cost of the packaging level test is saved; especially, the method is more effective for the electromigration failure analysis of large-size complex structures such as 3D-ICs and the like.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (11)
1. An electromigration test structure located in a scribe line region, the electromigration test structure comprising:
a metal interconnection structure to be tested;
the first sensing electrode is electrically connected with one end of the metal interconnection structure to be detected;
the second sensing electrode is electrically connected with the other end of the metal interconnection structure to be detected;
the third sensing electrode is at least electrically connected with the position between two ends of the metal interconnection structure to be detected;
the first loading electrode is electrically connected with the first sensing electrode; and the number of the first and second groups,
and the second loading electrode is electrically connected with the second sensing electrode.
2. The electromigration test structure of claim 1 wherein the metal interconnect structure comprises a metal layer to be tested and conductive plugs to be tested located at two ends of the metal layer to be tested, and the first sensing electrode and the second sensing electrode are electrically connected to the conductive plugs to be tested at two ends of the metal layer to be tested, respectively.
3. The electromigration test structure of claim 2 wherein at least one test metal layer and a test conductive plug are connected below each of said third sensing electrodes, and one end of said test metal layer is electrically connected to at least the position between the two ends of said metal layer to be tested through said test conductive plug.
4. The electromigration test structure of claim 3 wherein said electromigration test structure comprises two third sensing electrodes, a test metal layer is connected below each of said third sensing electrodes, and one end of each of said test metal layers is electrically connected to two ends of said metal layer to be tested through said test conductive plug.
5. The electromigration test structure of claim 3 wherein the electromigration test structure comprises two third sensing electrodes, an upper first test metal layer and a lower third test metal layer are connected below a first third sensing electrode close to the first sensing electrode, one end of the first test metal layer is electrically connected to one end of the third test metal layer through a test conductive plug, and the other end of the third test metal layer is electrically connected to a conductive plug to be tested at one end of the metal layer to be tested; and a second testing metal layer on the upper layer and a fourth testing metal layer on the lower layer are connected below a second third sensing electrode close to the second sensing electrode, one end of the second testing metal layer is electrically connected with one end of the fourth testing metal layer through a testing conductive plug, and the other end of the fourth testing metal layer is electrically connected with the two ends of the metal layer to be tested through a testing conductive plug.
6. The electromigration test structure of claim 2, wherein the electromigration test structure further comprises a plurality of connecting metal lines, and the first sensing electrode and the second sensing electrode are electrically connected to the conductive plugs to be tested at two ends of the metal layer to be tested, the first loading electrode and the first sensing electrode, and the second loading electrode and the second sensing electrode respectively through the connecting metal lines.
7. The electromigration test structure of any of claims 1 to 6, wherein the at least one third sense electrode is located between the first sense electrode and the second sense electrode, the first load electrode is located on a side of the first sense electrode away from the third sense electrode, and the second load electrode is located on a side of the second sense electrode away from the third sense electrode.
8. An electromigration test method, comprising:
providing a test sample comprising the electromigration test structure of any of claims 1 to 7;
testing a change in resistance value between any two of the first, second and at least one third sense electrodes to obtain a plurality of resistance offset values;
determining whether each of the plurality of resistance offset values is greater than a preset failure value; and the number of the first and second groups,
and determining the electromigration failure position of the metal interconnection structure to be tested according to the resistance deviation value which is larger than the preset failure value.
9. The electrotransport test method according to claim 8, wherein the step of testing the change in the resistance value between any two of the first sensing electrode, the second sensing electrode and the at least one third sensing electrode comprises:
inputting current by using the first loading electrode or the second loading electrode or using the first loading electrode and the second loading electrode successively as input ends, and testing voltages at the first sensing electrode, the second sensing electrode and the at least one third sensing electrode to obtain a plurality of initial voltage values;
dividing a difference between any two of the plurality of initial voltage values by an input current value to obtain a plurality of initial resistance values;
continuing to input current to the first loading electrode or the second loading electrode or successively using the first loading electrode and the second loading electrode as input ends, and after a preset test time, testing voltages at the first sensing electrode, the second sensing electrode and the at least one third sensing electrode to obtain a plurality of test voltage values;
dividing a difference between any two of the plurality of test voltage values by the input current value to obtain a plurality of test resistance values; and the number of the first and second groups,
calculating a variation of the plurality of test resistance values based on the corresponding plurality of initial resistance values to obtain a plurality of resistance offset values.
10. The electromigration test of claim 9 wherein said second load electrode is grounded if said first load electrode is used as an input terminal; or, the second loading electrode is used as an input end, and the first loading electrode is grounded; or, the first loading electrode and the second loading electrode are sequentially used as input ends, and one end which is not used as the input end is grounded.
11. The electromigration test of claim 8 wherein the step of determining the electromigration failure location of the metal interconnect structure under test based on the resistance offset value being greater than the predetermined failure value comprises: and determining the position between the two sensing electrodes corresponding to the resistance deviation value larger than the preset failure value as the electromigration failure position of the metal interconnection structure to be tested.
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