CN104332459B - A kind of contact hole RTA reliability test assembly - Google Patents
A kind of contact hole RTA reliability test assembly Download PDFInfo
- Publication number
- CN104332459B CN104332459B CN201410443389.7A CN201410443389A CN104332459B CN 104332459 B CN104332459 B CN 104332459B CN 201410443389 A CN201410443389 A CN 201410443389A CN 104332459 B CN104332459 B CN 104332459B
- Authority
- CN
- China
- Prior art keywords
- contact hole
- contact
- test assembly
- plain conductor
- reliability test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
A kind of contact hole RTA reliability test assembly, including：Contact hole, it is the unitunder test of contact hole RTA reliability test assembly；First plain conductor, it is arranged on the top of the contact hole；Bottom contact layer, it is arranged on the bottom different from the first plain conductor side of the contact hole.Contact hole RTA reliability test assembly of the present invention at the top of contact hole by setting the first plain conductor, in the bottom of contact hole, bottom contact layer is set, it cannot be only used for assessing the stress migration reliability of the first plain conductor, and available for the reliability for assessing contact hole and metal silicide interconnection part, and the contact hole chain structure of contact hole RTA reliability test assembly has the situation of multiple, continuous contact hole interconnection suitable for assessing actual circuit, and the design of multiple contact holes is easier to capture the abnormal conditions of contact hole interconnecting parts in technique.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of contact hole RTA reliability test assembly.
Background technology
At present, the reliability testing structure related to contact hole (Contact) only has electromigration
(Electromigration) structure, the structure are served only for investigating first layer metal line (M1:When Metal1) being connected with contact hole,
First layer metal line (M1:Metal1 the electromigration reliability failure) occurred.But in actual circuit, it is related to contact hole
Reliability failures be not limited thereto.Such as：The loose contact of contact hole bottom and metal silicide caused by manufacturing process；
During use, the first layer metal line (M1 with contact hole coupling part:Metal1) migration failure under stress etc.,
The reliability failures of contact hole interconnecting parts may all be caused.
Conventional stress migration (Stress Migration, SM or Stress Induced Void, SIV) structure is main
For detecting the integrity problem between first layer metal line and follow-up interconnection line, contact hole interconnecting parts are not covered yet
Stress migration integrity problem.
As semiconductor technology is increasingly advanced, the size of copper conductor and contact hole is less and less, contact hole (tungsten) and the
The difference of the material property of layer of metal wire (copper), the integrity problem of contact hole interconnecting parts will become increasingly conspicuous.In addition,
Not yet proposed for the reliability testing structure of contact hole and metal silicide (Salicide) interconnecting parts.With semiconductor work
The size of the development of skill, the size of contact hole and the metal silicide contacted is less and less.Metal silicide manufactures matter
The quality of amount, the quality of contact hole filling quality may all cause the integrity problem that contact hole interconnects.
Therefore the problem of existing for prior art, this case designer is by the experience of the industry for many years is engaged in, actively research
Improvement, then there is a kind of contact hole RTA reliability test assembly of the invention.
The content of the invention
The present invention be directed in the prior art, traditional reliability testing structure related to contact hole (Contact) is not
Cover the stress migration integrity problem of contact hole interconnecting parts, and it is mutual for contact hole and metal silicide (Salicide)
The defects of even reliability testing structure of part not yet proposes provides a kind of contact hole RTA reliability test assembly.
In order to solve the above problems, the present invention provides a kind of contact hole RTA reliability test assembly, the contact hole reliability
Test device, including：Contact hole, it is the unitunder test of contact hole RTA reliability test assembly；First plain conductor, it is arranged on institute
State the top of contact hole；Bottom contact layer, it is arranged on the bottom different from the first plain conductor side of the contact hole.
Alternatively, the bottom contact layer is electrically connected by multiple contact holes with being used as the first plain conductor of lead again.
Alternatively, the bottom contact layer is electrically connected by multiple contact holes with being used as the first plain conductor of lead again, weight
Overlapping adds to form chain structure.
Alternatively, the bottom contact layer be active area, polysilicon layer, or the conductive material of contact hole bottom wherein it
One.
Alternatively, the resistance of the contact hole RTA reliability test assembly is measured using two hold-carryings or four-end method measures.
Alternatively, the material of the contact hole is tungsten material.
In summary, contact hole RTA reliability test assembly of the present invention sets the first metal to lead by the top layer in contact hole
Line, bottom contact layer is set in the bottom of contact hole, cannot be only used for assessing the stress migration reliability of the first plain conductor, and
Available for the reliability for assessing contact hole and metal silicide interconnection part, and the contact pore chain of contact hole RTA reliability test assembly
Formula structure has the situation of multiple, continuous contact hole interconnection suitable for assessing actual circuit, and the design of multiple contact holes is more
Easily capture the abnormal conditions of contact hole interconnecting parts in technique.
Brief description of the drawings
Fig. 1 (a)~1 (b) show single contact hole test structure schematic diagram of contact hole RTA reliability test assembly of the present invention；
Fig. 2 show the contact hole chain type test structural representation of contact hole RTA reliability test assembly of the present invention.
Embodiment
To describe technology contents, construction feature, institute's reached purpose and effect of the invention in detail, below in conjunction with reality
Apply example and coordinate accompanying drawing to be described in detail.
First embodiment
Refer to Fig. 1 (a)~1 (b), Fig. 1 (a)~1 (b) show singly connecing for contact hole RTA reliability test assembly of the present invention
Contact hole test structure schematic diagram.Single contact hole test structure 10a of the contact hole RTA reliability test assembly 1 unitunder test
For single contact hole 11.Single contact hole test structure 10a of the contact hole RTA reliability test assembly 1, including：Contact hole 11,
The contact hole 11 is the unitunder test of contact hole RTA reliability test assembly 1；First plain conductor 12, first metal are led
Line 12 is arranged on the top of the contact hole 11；Bottom contact layer 13, the bottom contact layer 13 include but is not limited to active area or more
Crystal silicon layer, and the bottom contact layer 13 is arranged on the bottom different from the side of the first plain conductor 12 of the contact hole 11, it is described
Bottom contact layer 13 is electrically connected by multiple contact holes 11 with being used as the first plain conductor 12 of lead (Leading Wire) again.
As those skilled in the art, it is readily appreciated that ground, the structure design of multiple contact holes 12 can effectively improve lead
Reliability, prevent that prior to the single contact hole 11 reliability failures occur for lead in test process.The first gold medal as lead
The width of category wire 12 needs reasonable set, and excessive or too small width may all reduce the reliability of lead, for example, lead should
Aggravation of power migration etc..On the other hand, if the bottom of the contact hole 11 is connected with the active area of the bottom contact layer 13,
The doping type of rational design active area is then needed, avoids the active area of bottom contact layer 13 from being connected with silicon-based substrate (Substrate),
Leakage current is formed, influences measuring accuracy.
Second embodiment
Second embodiment uses identical value number with first embodiment something in common, and it will not go into details.
Referring to Fig. 2, Fig. 2 show the contact hole chain type test structural representation of contact hole RTA reliability test assembly of the present invention
Figure.The contact hole chain type test structure 10b of the contact hole RTA reliability test assembly 1, including：Contact hole 11, the contact hole
11 be the unitunder test of contact hole RTA reliability test assembly 1；First plain conductor 12, first plain conductor 12 are arranged on
The top of the contact hole 11；Bottom contact layer 13, the bottom contact layer 13 include but is not limited to active area or polysilicon layer, and institute
The bottom different from the side of the first plain conductor 12 that bottom contact layer 13 is arranged on the contact hole 11 is stated, the bottom contact layer 13 is again
Electrically connected by multiple contact holes 11 with being used as the first plain conductor 12 of lead (Leading Wire), repeat superposition and form chain
Formula structure.
As those skilled in the art, it is readily appreciated that ground, the width and its first as the first plain conductor 12 of lead
The design of plain conductor 12 and the fit dimension of the contact hole 11 should cover worst situation in design rule (Design Rule)
(Worst Case).It is apparent that the contact hole chain type test structure 10b of the contact hole RTA reliability test assembly 1 can be used for commenting
Estimate reliability performance when multiple contact holes 11 in circuit interconnect.More specifically, using contact hole RTA reliability test assembly 1 it
Contact hole chain type test structure 10b can assess the stress migration performance of the first plain conductor 12 and the coupling part of contact hole 11, also
Available in technical process, when the bottom of the contact hole 11 occurs abnormal with metal silicide (Salicide) contact portion
Reliability.The design of the quantity of the contact hole 11 should cover the worst situation in actual product, the contact hole 11 of substantial amounts
It is designed with the abnormal conditions in the fabrication process beneficial to seizure contact hole 11.
It is apparent that contact hole RTA reliability test assembly of the present invention is not limited to single contact hole test structure 10a, contact
Pore chain formula test structure 10b, those skilled in the art can cover other connections according to the contact hole connection in actual circuit
The situation of hole connection, for example, structure of dual contact interconnection etc..Meanwhile the bottom contact layer 13 includes but is not limited to active area
Or polysilicon layer, it can also cover other conductive materials of the bottom of contact hole 11 in actual circuit.The contact hole reliability testing
Two hold-carryings that device 1 is suitable in this area measure and four-end method measures.The material of the contact hole 11 includes but is not limited to tungsten material
Material, also include the other conventional materials that can be filled as contact hole.
In order to more intuitively disclose the technical scheme of the present invention, the beneficial effect of the present invention is highlighted, in conjunction with specific reality
The mode of applying is illustrated.In the first embodiment, when measuring single contact hole test structure 10a resistance, two hold-carryings can be used
Measure and four-end method measures.So that four-end method measures as an example, the top of the contact hole 11 and orthogonal first plain conductor
12 are connected, and application end (Force) of the first plain conductor 12 of one of them as electric current or voltage, another first metal is led
Line 12 is then end of probe (Sense)；The bottom of the contact hole 11 is connected with bottom contact layer 13, and bottom contact layer 13 is connect by multiple
Contact hole 11 is connected on two the first plain conductors 12 of width adequate, and two first plain conductors 12 are respectively as another
Outer application end and end of probe.
When measuring single contact hole test structure 10a resistance, apply test voltage or test electric current by applying end,
End of probe probe current or voltage, using the conventional technical means of this area, resistance is calculated by test system.Similarly, it is sharp
Measured with two hold-carryings or four-end method measures the measurement that can also realize the resistance to contact hole chain type test structure 10b.
Based on design rule, by the size of the first plain conductor 12 and contact hole 11 and collocation design into worst in circuit
Situation (Worse Case), it is reliable available for the stress migration (Stress Migration, SM) for assessing the first plain conductor 12
Property；The size of the first plain conductor 12 and the Matching Relation of contact hole 11 are rationally designed, to ensure the first plain conductor 12 and connect
The interconnecting parts of contact hole 11 have very high reliability, available for the reliability for assessing contact hole 11 and metal silicide interconnection part.
Contact hole chain type test structure 10b has the situation of multiple, the continuous interconnection of contact hole 11 suitable for assessing actual circuit, and more
The design of individual contact hole 11 is easier to capture the abnormal conditions of contact hole interconnecting parts in technique.
In summary, contact hole RTA reliability test assembly of the present invention sets the first metal to lead by the top layer in contact hole
Line, bottom contact layer is set in the bottom of contact hole, cannot be only used for assessing the stress migration reliability of the first plain conductor, and
Available for the reliability for assessing contact hole and metal silicide interconnection part, and the contact pore chain of contact hole RTA reliability test assembly
Formula structure has the situation of multiple, continuous contact hole interconnection suitable for assessing actual circuit, and the design of multiple contact holes is more
Easily capture the abnormal conditions of contact hole interconnecting parts in technique.
Those skilled in the art, can be to this hair it will be appreciated that without departing from the spirit or scope of the present invention
Bright carry out various modifications and variations.Thus, if any modification or modification fall into the protection of appended claims and equivalent
In the range of when, it is believed that the present invention covers these modifications and variations.
Claims (5)
- A kind of 1. contact hole RTA reliability test assembly, it is characterised in that the contact hole RTA reliability test assembly, including：Contact hole, it is the unitunder test of contact hole RTA reliability test assembly；First plain conductor, it is arranged on the top of the contact hole；Bottom contact layer, it is arranged on the bottom different from the first plain conductor side of the contact hole；The bottom contact layer passes through again Multiple contact holes electrically connect with the first plain conductor as lead；By the size and collocation design of the first plain conductor and contact hole into the worst situation in circuit, for assessing the first metal Wire and the stress migration reliability of contact hole coupling part；Rationally design the size of the first plain conductor and the collocation of contact hole Relation, to ensure that the first plain conductor and contact hole interconnecting parts have very high reliability, for assessing contact hole and bottom contact The reliability of layer interconnecting parts.
- 2. contact hole RTA reliability test assembly as claimed in claim 1, it is characterised in that the bottom contact layer is again by multiple Contact hole electrically connects with the first plain conductor as lead, repeats superposition and forms chain structure.
- 3. the contact hole RTA reliability test assembly as described in claim 1~2 any claim, it is characterised in that the bottom Contact layer is active area, polysilicon layer, or one of conductive material of contact hole bottom.
- 4. the contact hole RTA reliability test assembly as described in claim 1~2 any claim, it is characterised in that described to connect The resistance of contact hole RTA reliability test assembly is measured using two hold-carryings or four-end method measures.
- 5. the contact hole RTA reliability test assembly as described in claim 1~2 any claim, it is characterised in that described to connect The material of contact hole is tungsten material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410443389.7A CN104332459B (en) | 2014-09-02 | 2014-09-02 | A kind of contact hole RTA reliability test assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410443389.7A CN104332459B (en) | 2014-09-02 | 2014-09-02 | A kind of contact hole RTA reliability test assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104332459A CN104332459A (en) | 2015-02-04 |
| CN104332459B true CN104332459B (en) | 2017-11-14 |
Family
ID=52407160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410443389.7A Active CN104332459B (en) | 2014-09-02 | 2014-09-02 | A kind of contact hole RTA reliability test assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104332459B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847411A (en) * | 2018-06-22 | 2018-11-20 | 武汉新芯集成电路制造有限公司 | A kind of interconnecting construction enhancing stress migration reliability |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102200554A (en) * | 2011-03-30 | 2011-09-28 | 上海北京大学微电子研究院 | Resistor test structure and method |
| CN102890195A (en) * | 2011-07-20 | 2013-01-23 | 上海华虹Nec电子有限公司 | Structure and method for testing resistances of contact holes on same type active region with substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2220680A1 (en) * | 2007-12-06 | 2010-08-25 | Nxp B.V. | Semiconductor device and wafer with a test structure and method for assessing adhesion of under-bump metallization |
-
2014
- 2014-09-02 CN CN201410443389.7A patent/CN104332459B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102200554A (en) * | 2011-03-30 | 2011-09-28 | 上海北京大学微电子研究院 | Resistor test structure and method |
| CN102890195A (en) * | 2011-07-20 | 2013-01-23 | 上海华虹Nec电子有限公司 | Structure and method for testing resistances of contact holes on same type active region with substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104332459A (en) | 2015-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9557376B2 (en) | Apparatuses and methods for die seal crack detection | |
| TWI439704B (en) | Structure for measuring bump resistance and package substrate comprising the same | |
| CN103219322B (en) | There is three dimensional integrated circuits and the using method thereof of resistance measuring arrangements | |
| CN112864131B (en) | Electromigration test structure and electromigration test method | |
| CN104658940A (en) | Structure for measuring electrical properties of FinFET (fin field-effect transistor) | |
| CN106684008A (en) | Reliability test structure of semiconductor device and test method thereof | |
| US20140339558A1 (en) | Alternating open-ended via chains for testing via formation and dielectric integrity | |
| CN104900629A (en) | Testing structure for detecting deviation | |
| CN104332459B (en) | A kind of contact hole RTA reliability test assembly | |
| CN102082107B (en) | Method for measuring temperature of chip | |
| JP5529611B2 (en) | Semiconductor device and resistance measuring method | |
| CN103779327A (en) | IMD measurement circuit structure and IMD performance test method | |
| CN205248238U (en) | Reliability test structure | |
| CN104183574B (en) | Semiconductor testing structure and a semiconductor testing method | |
| CN108269785A (en) | Test structure and forming method thereof, test method | |
| CN105652088B (en) | The test device of external interface contact impedance | |
| CN104882434B (en) | A kind of electrical testing structure and method | |
| CN203895444U (en) | Contact hole bridging test structure | |
| CN207367924U (en) | Wafer and its wafer permit Acceptance Tests structure | |
| CN204102893U (en) | A kind of semi-conductor test structure | |
| CN105206600B (en) | Semi-conductor test structure | |
| JP5370250B2 (en) | Manufacturing method of semiconductor device | |
| CN105226051B (en) | Semi-conductor test structure and conductive plunger and the detection method of active region contact performance | |
| CN204807669U (en) | Multilayer test module and semiconductor device parent part | |
| WO2023283991A1 (en) | Method for measuring resistance value of contact plug, and test structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |