CN102200554A - Resistor test structure and method - Google Patents
Resistor test structure and method Download PDFInfo
- Publication number
- CN102200554A CN102200554A CN201110079371XA CN201110079371A CN102200554A CN 102200554 A CN102200554 A CN 102200554A CN 201110079371X A CN201110079371X A CN 201110079371XA CN 201110079371 A CN201110079371 A CN 201110079371A CN 102200554 A CN102200554 A CN 102200554A
- Authority
- CN
- China
- Prior art keywords
- test structure
- sub
- hole
- resistance
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a resistor test structure and a resistor test method in order to improve the test precision of a through-hole resistor. The test structure comprises at least two sub test structures; each of the sub test structures is a through-hole chain and comprises a plurality of through-hole units and interconnection wires connected with the through-hole units; two adjacent through-hole units are connected with each other through the interconnection wire; the number of through holes of the through-hole units in the same sub test structure is the same; each of the interconnection wires consists of interconnection wires positioned on two adjacent metal layers respectively; the upper interconnection wire and the lower interconnection wire have an overlapped region at the connection of the through holes; the numbers of the through holes of the through-hole units in the sub test structures are different; and the interconnection wires of the sub test structures are totally the same.
Description
Technical field
The present invention relates to integrated circuit fields, relate in particular to through hole resistance measurement structure and method.
Background technology
Along with the development of technology, integrated level is more and more higher, and the transistor that comprises in the integrated circuit is more and more, the number of plies of interconnection line also from before three or four layers be increased to nine layers even ten layers.And the contact hole that these transistors and interconnection line are linked together, and the through hole that the interconnection line on the different metal layer is linked together, number sharply increases.
Along with development of integrated circuits, electrical parameters such as the dead resistance electric capacity of backend interconnect line become the key factor of decision-making circuit performance, so it is the through hole that these interconnection lines link together is also more and more important, integrated circuit fabrication process comprises a plurality of steps, and integrated circuit comprises millions of to more than 100,000,000 through holes usually, and the inefficacy of any one through hole all may cause the function of integrated circuit can't reach pre-provisioning request.So industry is also more and more higher to the requirement of accurate extraction through hole resistance.
The measuring principle of through hole resistance is normally: adopt test structure, and be made into test chip, by measuring the resistance of test structure, finally obtain through hole resistance then.
The through hole test structure of industry existence at present adopts a via chain that includes through hole and interconnection line, and the resistance of test whole piece via chain calculates single through hole resistance then.The through hole resistance that this scheme draws comprises the resistance of interconnection line part, and the through hole resistance error that obtains is bigger.
Summary of the invention
The invention provides through hole resistance test structure and correlation method, to improve the accuracy of measurement of through hole resistance.
Interconnection line test structure provided by the invention comprises a plurality of sub-test structures, described sub-test structure is a via chain, the interconnection line that includes a plurality of through holes unit and connecting through hole unit, adjacent two through hole unit are linked to each other by interconnection line, the via count that through hole unit in described same the sub-test structure comprises is identical, described interconnection line is made up of the interconnection line that lays respectively on adjacent two metal levels, and two-layer up and down interconnection line has the overlapping region in the through hole junction, described each sub-test structure is differing from each other in the via count of through hole unit, and the interconnection line part of described each sub-test structure is identical.
The invention provides the method that adopts through hole resistance test structure calculating through hole resistance among the present invention, comprise step: make the test chip that comprises each sub-test structure; Test the resistance of via chain in each sub-test structure respectively; Analyze the corresponding relation of the via chain resistance value and the corresponding sub-test structure through hole unit inner via hole number of each sub-test structure; According to described corresponding relation, described point in rectangular coordinate, setting-out; According to the gained straight line, its intercept on ordinate is as interconnection line part resistance; According to gained straight line in the coordinate axis, the via chain resistance when its slope is 1 through hole as each sub-test structure overlapping region; The resistance of via chain when being 1 through hole according to the gained overlapping region is divided by the total via count in this via chain, as the resistance of single through hole.
Adopt the test structure and the method for the embodiment of the invention, can obtain the resistance value of a through hole, and in the prior art, if will test through hole resistance, the resistance of part interconnection line also can be joined in the through hole resistance, therefore, compared with prior art, the test structure and the method that adopt the embodiment of the invention to provide, the accuracy that can improve through hole resistance.
Description of drawings
Figure 1A～1C is the structural representation of each sub-test structure in the embodiment of the invention;
The through hole resistance measuring method process flow diagram that Fig. 2 proposes for the embodiment of the invention;
Fig. 3 is the corresponding relation that each sub-test structure measuring resistance and through hole unit inner via hole are counted inverse in the embodiment of the invention.
Embodiment
At the problem that background technology is mentioned, the embodiment of the invention proposes following through hole test structure and corresponding computing method, and interconnection line part resistance has improved the accuracy of test through hole resistance to the influence of through hole resistance in the existing test structure to eliminate.
Fig. 1 is a test structure synoptic diagram in the embodiment of the invention, and through hole resistance test structure and method that the embodiment of the invention proposes comprise:
Described structure comprises a plurality of sub-test structures 10,20,30;
Described sub-test structure 10 comprises interconnection line part 111,112 and through hole unit 12, and interconnection line 111 links to each other by the through hole in the through hole unit 12 with 112 in the described structure, and interconnection line 111 and 112 has the overlapping region in the through hole unit;
Described sub-test structure 20 comprises interconnection line part 211,212 and through hole unit 22, and interconnection line 211 links to each other by the through hole in the through hole unit 22 with 212 in the described structure, and interconnection line 211 and 212 has the overlapping region in the through hole unit;
Described sub-test structure 30 comprises interconnection line part 311,312 and through hole unit 32, and interconnection line 311 links to each other by the through hole in the through hole unit 32 with 312 in the described structure, and interconnection line 311 and 312 has the overlapping region in the through hole unit;
In the sub-test structure 10, the number of through-holes in all through hole unit 12 is identical;
In the sub-test structure 20, the number of through-holes in all through hole unit 22 is identical;
In the sub-test structure 30, the number of through-holes in all through hole unit 32 is identical;
In each sub-test structure, the via count in the through hole unit 12,22,32 is differing from each other;
The interconnection line part 111,211 of each sub-test structure, 311 is identical;
The interconnection line part 112,212 of each sub-test structure, 312 is identical.
Optionally, each sub-test structure carries out suitable prolongation, forms a via chain, so that during the via chain resistance of each sub-test structure of test test, reduces error.
Optionally, the via chain that each sub-test structure forms can be made different shape, to reach various purposes, makes cranky shape, can adjust density metal, reduces technological fluctuation.
Optionally, each sub-test structure can be dissolved in the middle of other test structures, can put into described each sub-test structure in the comb meander structure.
Below comprising 3 sub-test structures, through hole 12,22,32 via count is respectively m
1, m
2, m
3Test structure be example, provide the through hole resistance test structure that proposes based on the embodiment of the invention, measure the scheme of through hole resistance.
The through hole resistance method of testing process flow diagram that Fig. 2 proposes for the embodiment of the invention, in conjunction with this figure, the through hole resistance measuring method that the embodiment of the invention proposes comprises step:
Step 2 is tested the resistance of whole piece via chain in each sub-test structure.
Step 3, the corresponding relation of the through hole number in analysis institute's measuring resistance and the corresponding sub-test structure through hole unit, its corresponding relation is:
Wherein, Ri represents the via chain resistance test value of described i sub-test structure; R
LRepresent the resistance value of interconnection line part in described each sub-test structure; m
iRepresent the via count of each overlapping region in each sub-test structure; R
0The through hole of representing each overlapping region in the described sub-test structure is 1 o'clock, the resistance of all through holes and.
Step 4 according to described corresponding relation, is an ordinate with test gained resistance, with the m of correspondence
iInverse be horizontal ordinate, described point in rectangular coordinate system, setting-out, Fig. 3.
Step 5, according to the gained straight line, its slope be exactly a sub-test structure overlapping region when being 1 through hole all through hole resistances and.With reference to figure 3, its intercept on ordinate is exactly an interconnection line part resistance in the sub-test structure; Its slope is exactly to be in the sub-test structure under 1 through hole condition in the through hole unit, the resistance of all through holes and.
Step 6, according to the gained through hole resistance and, total, be exactly the resistance of single through hole divided by the via count in this via chain.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. a through hole resistance test structure is characterized in that, comprising:
A plurality of sub-test structures, described sub-test structure comprise a plurality of through holes unit and the interconnection line that is connected these through holes with one deck, and through hole unit in the described sub-test structure and interconnection line constitute a via chain structure; Wherein,
In each sub-test structure, through hole has through hole in the unit, and all via area are equal,
In each sub-test structure, interconnection line part is made up of two-layer interconnection line up and down,
In each sub-test structure, the interconnection line part is made up of the short-term of a plurality of connecting through holes,
In each sub-test structure, the levels interconnection line has the overlapping region at lead to the hole site.
2. test structure as claimed in claim 1 is characterized in that, between each sub-test structure, the interconnection line part is identical.
3. test structure as claimed in claim 1 is characterized in that, in each sub-test structure, two-layer up and down interconnection short-term has the overlapping region in the through hole unit,
And the area of each overlapping region is greater than 2 via area.
4. test structure as claimed in claim 1 is characterized in that, in each sub-test structure, the via count of each through hole unit equates.
5. test structure as claimed in claim 1 is characterized in that, between each sub-test structure, the via count of each through hole unit is unequal.
6. one kind is adopted the described test structure of each claim in the claim 1～5, measures the method for interconnection line through hole resistance, it is characterized in that, comprising:
Making comprises the test chip of each sub-test structure;
Test the resistance of via chain in each sub-test structure respectively;
Analyze the corresponding relation of the via chain resistance value and the corresponding sub-test structure through hole unit inner via hole number of each sub-test structure;
According to described corresponding relation, described point in rectangular coordinate system, setting-out;
According to the gained straight line, its intercept on ordinate is as interconnection line part resistance in the sub-test structure;
According to the gained straight line, its slope is as being in the sub-test structure under 1 through hole condition in the through hole unit, the resistance of all through holes and;
According to the gained through hole resistance and, divided by the total via count in this via chain, as the resistance of single through hole.
7. method as claimed in claim 6 is characterized in that, described corresponding relation is:
Wherein, Ri represents the via chain resistance test value of described i sub-test structure; R
LRepresent the resistance value of interconnection line part in described each sub-test structure; m
iRepresent the via count of each through hole unit in each sub-test structure; R
0The via count of representing each through hole unit in the described sub-test structure is 1 o'clock, in this sub-test structure the resistance of all through holes and.
8. method as claimed in claim 6 is characterized in that, described in coordinate in the described point setting-out comprise:
With the test resistance of via chain in described each sub-test structure, as ordinate;
With the via count of described each sub-test structure in each through hole unit is horizontal ordinate;
With the gained data with described method described point;
Institute's invocation point is connected to straight line.
9. above-mentioned 1～8 described test structure and method of testing are equally applicable to the test to the contact hole resistance between poly and the metal1 layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110079371XA CN102200554A (en) | 2011-03-30 | 2011-03-30 | Resistor test structure and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110079371XA CN102200554A (en) | 2011-03-30 | 2011-03-30 | Resistor test structure and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102200554A true CN102200554A (en) | 2011-09-28 |
Family
ID=44661393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110079371XA Pending CN102200554A (en) | 2011-03-30 | 2011-03-30 | Resistor test structure and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102200554A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137604A (en) * | 2011-11-29 | 2013-06-05 | 上海华虹Nec电子有限公司 | Test structure of resistance penetrating through contacting holes of silicon wafer and test method |
| WO2013082834A1 (en) * | 2011-12-05 | 2013-06-13 | 上海北京大学微电子研究院 | Resistance test structure and method |
| CN103426865A (en) * | 2012-05-16 | 2013-12-04 | 上海华虹Nec电子有限公司 | Structure and method for testing contact resistance of W-sinks in semiconductor product |
| CN103839921A (en) * | 2012-11-26 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Through si via radio frequency test structure and parasitic extracting method thereof |
| CN104124235A (en) * | 2014-07-30 | 2014-10-29 | 上海华力微电子有限公司 | Testing structure and testing method implemented by same |
| CN104133170A (en) * | 2013-05-02 | 2014-11-05 | 格罗方德半导体公司 | Structure and method for testing integrated circuits and via chains therein |
| CN104157584A (en) * | 2013-05-15 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Test structure and test method of deep through hole resistance |
| CN104332459A (en) * | 2014-09-02 | 2015-02-04 | 上海华力微电子有限公司 | Contact reliability test device |
| CN104347594B (en) * | 2013-07-24 | 2017-02-22 | 中芯国际集成电路制造(上海)有限公司 | Silicon through hole test structure, silicon through hole test method and silicon through hole formation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766263A (en) * | 1993-08-26 | 1995-03-10 | Sumitomo Metal Ind Ltd | Contact resistance measuring method of multilayered metal wiring, semiconductor device and wafer |
| JP2009111290A (en) * | 2007-10-31 | 2009-05-21 | Sharp Corp | Resistance measuring element and method of measuring contact resistance, and semiconductor device chip and evaluation method thereof |
| CN101762750A (en) * | 2008-12-25 | 2010-06-30 | 上海北京大学微电子研究院 | Structure and method for measuring resistance of through hole |
| CN101788642A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Integrated circuit testing device for measuring resistance of metal through hole and manufacture method thereof |
-
2011
- 2011-03-30 CN CN201110079371XA patent/CN102200554A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766263A (en) * | 1993-08-26 | 1995-03-10 | Sumitomo Metal Ind Ltd | Contact resistance measuring method of multilayered metal wiring, semiconductor device and wafer |
| JP2009111290A (en) * | 2007-10-31 | 2009-05-21 | Sharp Corp | Resistance measuring element and method of measuring contact resistance, and semiconductor device chip and evaluation method thereof |
| CN101762750A (en) * | 2008-12-25 | 2010-06-30 | 上海北京大学微电子研究院 | Structure and method for measuring resistance of through hole |
| CN101788642A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Integrated circuit testing device for measuring resistance of metal through hole and manufacture method thereof |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137604A (en) * | 2011-11-29 | 2013-06-05 | 上海华虹Nec电子有限公司 | Test structure of resistance penetrating through contacting holes of silicon wafer and test method |
| WO2013082834A1 (en) * | 2011-12-05 | 2013-06-13 | 上海北京大学微电子研究院 | Resistance test structure and method |
| CN103426865B (en) * | 2012-05-16 | 2016-08-17 | 上海华虹宏力半导体制造有限公司 | Semiconductor article tungsten groove contact resistance test structure and method of testing |
| CN103426865A (en) * | 2012-05-16 | 2013-12-04 | 上海华虹Nec电子有限公司 | Structure and method for testing contact resistance of W-sinks in semiconductor product |
| CN103839921A (en) * | 2012-11-26 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Through si via radio frequency test structure and parasitic extracting method thereof |
| CN103839921B (en) * | 2012-11-26 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | The radio frequency test structure of silicon through hole and parasitic extracting method |
| CN104133170A (en) * | 2013-05-02 | 2014-11-05 | 格罗方德半导体公司 | Structure and method for testing integrated circuits and via chains therein |
| CN104157584A (en) * | 2013-05-15 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Test structure and test method of deep through hole resistance |
| CN104157584B (en) * | 2013-05-15 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | The test structure and method of testing of deep via resistance |
| CN104347594B (en) * | 2013-07-24 | 2017-02-22 | 中芯国际集成电路制造(上海)有限公司 | Silicon through hole test structure, silicon through hole test method and silicon through hole formation method |
| CN104124235A (en) * | 2014-07-30 | 2014-10-29 | 上海华力微电子有限公司 | Testing structure and testing method implemented by same |
| CN104124235B (en) * | 2014-07-30 | 2017-02-01 | 上海华力微电子有限公司 | Testing structure and testing method implemented by same |
| CN104332459A (en) * | 2014-09-02 | 2015-02-04 | 上海华力微电子有限公司 | Contact reliability test device |
| CN104332459B (en) * | 2014-09-02 | 2017-11-14 | 上海华力微电子有限公司 | A kind of contact hole RTA reliability test assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102200554A (en) | Resistor test structure and method | |
| Huang et al. | Oscillation-based prebond TSV test | |
| US8482310B2 (en) | Test method for passive device embedded printed circuit board | |
| CN103137606A (en) | Resistance test structure and method | |
| CN103675531B (en) | Circuit for recognizing classes of devices, circuit board, terminal equipment and signal controller | |
| CN104237823B (en) | Method for effectively verifying probe card abnormality | |
| CN101762750B (en) | Structure and method for measuring resistance of through hole | |
| CN102608519B (en) | Circuit failure diagnosis method based on node information | |
| US9291669B2 (en) | Semiconductor device, test structure of the semiconductor device, and method of testing the semiconductor device | |
| CN101295002A (en) | Interconnection line failure detecting method | |
| CN103063921A (en) | Testing device for testing wafers for electronic circuits and related method | |
| CN101872002B (en) | Probe detection device and method thereof | |
| CN106154201A (en) | Impedance calibration compensation method in ATE measurement circuitry | |
| US20210102990A1 (en) | Testing structure and testing method | |
| CN112731241A (en) | Calibration tool and calibration method for wafer test machine | |
| CN109116112A (en) | A kind of conducting resistance test structure and method | |
| CN103134986A (en) | Resistance testing structure and method | |
| US20240036123A1 (en) | Method and apparatus for measuring electromigration of solder joint | |
| CN104569734B (en) | A kind of cable system redundant line method for diagnosing faults | |
| CN112117260A (en) | Metal electromigration test circuit structure | |
| CN111916444A (en) | Electrical property analysis layout for finger-shaped structure fin field effect transistor | |
| CN205670533U (en) | The test structure of resistance of metal through hole | |
| CN113125853A (en) | Resistance testing structure and method | |
| CN104133170A (en) | Structure and method for testing integrated circuits and via chains therein | |
| CN113050013B (en) | Device, method and panel for detecting contact performance of puncture test probe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110928 |