CN103456718B - Metal interconnecting charge transfer test structure - Google Patents
Metal interconnecting charge transfer test structure Download PDFInfo
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- CN103456718B CN103456718B CN201210183140.8A CN201210183140A CN103456718B CN 103456718 B CN103456718 B CN 103456718B CN 201210183140 A CN201210183140 A CN 201210183140A CN 103456718 B CN103456718 B CN 103456718B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention provides a kind of metal interconnecting charge transfer test structure, the corresponding one end of the first metal layer is accessed from different directions by multiple inputs of node pad, the electric current flowing into the first metal layer and filling through hole contact position is made to be shunted and gather by shunting the form gathered, effectively reduce the current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in the first metal layer of peripheral region, contact position, ensure that the success of the electro-migration testing of the second metal level is carried out, improve the success rate of metal interconnecting charge transfer test.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of metal interconnecting charge transfer test structure.
Background technology
In ic manufacturing process, electromigration (Electro-Migration, the EM) phenomenon of metal interconnecting wires causes open circuit and the short circuit of metal interconnecting wires, and device creepage is increased.Along with footprint constantly expands, device size constantly reduces, and the width of metal interconnecting wires constantly reduces, and current density constantly rises, and is easier to lose efficacy because of electromigration, has become an important integrity problem.
Electromigratory immediate cause is caused to be the movement of metallic atom.When the ELECTROMIGRATION PHENOMENON of integrated circuit refers to that integrated circuit (IC)-components works, certain electric current is had to pass through in metal interconnecting wires, electrostatic field force drives electronics to be moved by negative electrode anode, the electronics of high-speed motion and metallic atom generation energy exchange, atom is subject to fierce electron bombardment power, Here it is so-called electronics wind-force.But in fact metallic atom also receives reciprocal electrostatic field force simultaneously.When the current density in interconnection line is higher, a large amount of electron collision metallic atoms of anode motion, the electronics wind-force that metallic atom is subject to is greater than electrostatic field force.Therefore, metallic atom is subject to the driving of electronics wind-force, make it from the diffusion of negative electrode anode orientation, negative electrode is made to produce the room of metal ion, and accumulation and cause the open circuit of metal interconnecting wires, simultaneously cause whisker or hillock at anode due to the accumulation of metal ion, and likely with the metal line bridging on side.
Upward view and the cutaway view of existing a kind of normal structure for metal interconnecting charge transfer test is respectively shown in Figure 1A and 1B, metal interconnecting charge transfer testing standard structure generally includes the first metal layer and the second metal level 101, be filled with inter-level dielectric (not shown) between the two, the first metal layer has anode part 103b and cathode portion 103a, cathode portion 103a has the first on-load voltage node F1 and the first sensing voltage node S1, anode part 103b has the second on-load voltage node F2 and the second sensing voltage node S2, first on-load voltage node F1 and the second on-load voltage node F2 has large-size, be biased to allow higher on-load voltage.The cathode portion 103a of filling through hole 102a conducting second metal level 101 and the first metal layer, the cathode portion 103b of filling through hole 102b conducting second metal level 101 and the first metal layer.In order to identify the electromigration in the second metal level 101 of interconnection structure, applying to load bias voltage to the first on-load voltage node F1, then, sensing the voltage produced at the first sensing voltage node S1.Electromigratory existence in the second metal level 101 is represented by the resistance variations of reflected over time the second metal level 101 of voltage sensed at the first sensing voltage node S1 according to Ohm's law.Can also apply to load bias voltage on the second on-load voltage node F2, and sense the voltage produced at the second sensing voltage node S2.To be represented by the resistance variations of reflected over time the second metal level 101 of voltage sensed at the second sensing voltage node S2 according to Ohm's law and in the second metal level 101, occurred electromigration.
But, find in actual production, apply above-mentioned metal interconnecting charge transfer testing standard structure when carrying out the electro-migration testing of the second metal level 101, usually there is test crash situation, reason is due to the thickness of the Thickness Ratio anode part 103b of filling through hole 102b large (have even more than 10 times), therefore when electric current flows into filling through hole 102b from anode part 103b, cause anode part 103b current density excessive, be easier to produce unexpected hole (Void) 105 because of electromigration at filling through hole 102b and anode part 103b contact position, anode part 103b lost efficacy, cause the open circuit of the connection of anode part 103b and filling through hole 102, second metal level 101 electro-migration testing failure.Namely, successful second metal level 101 electro-migration testing should be that to produce space in the second metal level 101 part 104 be arranged in above cathode portion 103a be metal level 101 electro-migration testing, instead of surprisingly in the anode part 103b of the first metal layer produces hole 105.
Summary of the invention
The object of the present invention is to provide a kind of metal interconnecting charge transfer test structure, can effectively avoid producing unexpected hole because of electromigration, improve the success rate of metal interconnecting charge transfer test.
In order to solve the problem, the invention provides a kind of metal interconnecting charge transfer test structure, comprise the first metal layer and the second metal level treating electro-migration testing, described the first metal layer has first end and the second end, and conducts respectively by a filling through hole and described second metal level; Described metal interconnecting charge transfer test structure also comprises the node pad being positioned at described first end and/or the second end, described node pad is for applying test voltage and sensing voltage, and described node spacer has multiple input, described multiple input connects first end or the second end from different directions.
Further, the width of described the first metal layer and filling through hole contact position is greater than width and the filling through hole diameter of the second metal level.
Further, described input is conducted by conductive plunger and the first metal layer.
Further, the quantity of the conductive plunger in each direction is multiple.
Further, the conductive plunger in each direction forms an array.
Further, described array is circular or rectangle.
Further, the quantity of described input is 2 ~ 4.
Further, one end that described the first metal layer is connected to node pad is respectively equipped with one for connecting the contact arm of the input of described node pad on described different directions.
Further, described conductive plunger is contact hole plug or via plug.
Further, described second metal level is the first layer metal line M1 in multilayer interconnection line structure, and described the first metal layer is other layer of metal wire Mx, and wherein, x is more than or equal to 2.
Further, described the first metal layer is the first layer metal line M1 in multilayer interconnection line structure, and described second metal level is other layer of metal wire Mx, and wherein, x is more than or equal to 2.
Compared with prior art, metal interconnecting charge transfer test structure provided by the invention, the corresponding one end of the first metal layer is accessed from different directions by multiple inputs of node pad, the electric current flowing into the first metal layer and filling through hole contact position is made to be shunted and gather by shunting the form gathered, effectively reduce the current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in the first metal layer of peripheral region, contact position, ensure that the success of the electro-migration testing of the second metal level is carried out, improve the success rate of metal interconnecting charge transfer test.
Accompanying drawing explanation
Figure 1A is the upward view of the metal interconnecting charge transfer testing standard structure of prior art;
Figure 1B is the cutaway view of the metal interconnecting charge transfer testing standard structure of XX ' along Figure 1A;
Fig. 2 A is the upward view of the metal interconnecting charge transfer test structure of the embodiment of the present invention one;
Fig. 2 B is the cutaway view of the metal interconnecting charge transfer test structure of XX ' along Fig. 2 A;
Fig. 2 C is the cutaway view of the metal interconnecting charge transfer test structure of YY ' along Fig. 2 A;
Fig. 3 A is the upward view of the metal interconnecting charge transfer test structure of the embodiment of the present invention two;
Fig. 3 B is the cutaway view of the metal interconnecting charge transfer test structure of XX ' along Fig. 3 A;
Fig. 4 A is the upward view of the metal interconnecting charge transfer test structure of the embodiment of the present invention three;
Fig. 4 B is the cutaway view of the metal interconnecting charge transfer test structure of XX ' along Fig. 4 A;
Fig. 4 C is the cutaway view of the metal interconnecting charge transfer test structure of YY ' along Fig. 4 A.
Embodiment
Below in conjunction with the drawings and specific embodiments, the metal interconnecting charge transfer test structure that the present invention proposes is described in further detail.
Embodiment one
Please refer to Fig. 2 A, 2B, 2C, the present embodiment provides a kind of metal interconnecting charge transfer test structure, comprise the first metal layer with first end 201a and the second end 201b, the second metal level 203 treating electro-migration testing and with two-layer the first filling through hole 202a of directly contacting and the second filling through hole 202b, described first end 201a is conducted by the first filling through hole 202a and described second metal level 203, and described second end 201b is conducted by the second filling through hole 202b and described second metal level 203.
In the present embodiment, described metal interconnecting charge transfer test structure also comprises the node pad 204 being positioned at described first end 201a, described node pad 204 is for applying test voltage and sensing voltage, and there are 3 input 204a, 204b, 204c, first end 201a isolates the contact arm I on 3 directions by dielectric (not shown), II, III, in the inter-level dielectric of conductive plunger 205 array between node pad 204 and first end 201a (not shown), upper and lower bottom is contact input 204a respectively, 204b, 204c and contact arm I, II, III, input 204a, 204b, 204c and contact arm I, II, III is by the conducting of conductive plunger 205 array electric.
Wherein, described second metal level 203 is the first layer metal line M1 in multilayer interconnection line structure; Described the first metal layer is other layer of metal wire Mx, and x is more than or equal to 2, for the electro-migration testing of first layer metal line M1 in multilayer interconnection line structure; Also can be that described the first metal layer is the first layer metal line M1 in multilayer interconnection line structure; Described second metal level is other layer of metal wire Mx, and x is more than or equal to 2, for the electro-migration testing of X layer metal wire Mx in multilayer interconnection line structure.
When the metal interconnecting charge transfer test structure of application the present embodiment carries out electro-migration testing to the second metal level 203, in order to identify the electromigration in the second metal level 203 of interconnection structure, the first end 201a of the first metal layer is as anode, apply to load forward bias at node pad 204, simultaneously at the voltage that node pad 204 place sensing produces.Electromigratory existence in the second metal level 203 is represented by the resistance variations of reflected over time the second metal level 203 of the voltage sensed according to Ohm's law.Due to node pad 204 applying bias voltage after, the electric current produced is by 3 input 204a, 204b, 204c shunts, then from three contact arm I of first end 201a, II, III is aggregated into the first filling through hole 202a contact position, import the first filling through hole 202a, effectively reduce the first metal layer current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in peripheral region, contact position, ensure that the success of the electro-migration testing of the second metal level 203 is carried out, improve the success rate of metal interconnecting charge transfer test.
Embodiment two
Please refer to Fig. 3 A and 3B, the present embodiment provides a kind of metal interconnecting charge transfer test structure, comprise the first metal layer with first end 301a and the second end 301b, the second metal level 303 treating electro-migration testing and with two-layer first, second filling through hole 302a, 302b of directly contacting, described first end 301a is conducted by the first filling through hole 302a and described second metal level 303, and described second end 301b is conducted by the second filling through hole 302b and described second metal level 303.
In the present embodiment, described metal interconnecting charge transfer test structure also comprises the first node pad 304 being positioned at described first end 301a and the first node pad 304 ' being positioned at described second end 301b, described first node pad 304 is for applying test voltage and sensing voltage, and there are 3 inputs 304a, 304b, 304c, first end 301a isolates contact arm I, II, III on 3 directions by dielectric (not shown), in the inter-level dielectric of conductive plunger 305 array between node pad 304 and first end 301a (not shown), upper and lower bottom is contact input 304a, 304b, 304c and contact arm I, II, III respectively, and input 304a, 304b, 304c and contact arm I, II, III are by the conducting of conductive plunger 305 array electric, described Section Point pad 304 ' is for applying test voltage and sensing voltage, and there are 3 input 304a ', 304b ', 304c ', second end 301b isolates the contact arm I ' on 3 directions by dielectric (not shown), II ', III ', conductive plunger 305 array is arranged in the inter-level dielectric (not shown) between node pad 304 ' and the second end 301b, upper and lower bottom is contact input 304 ' a respectively, 304 ' b, 304 ' c and contact arm I ', II ', III ', input 304 ' a, 304 ' b, 304 ' c and contact arm I ', II ', III ' is by the conducting of conductive plunger 305 array electric.
When the metal interconnecting charge transfer test structure of application the present embodiment carries out electro-migration testing to the second metal level 303, can the first end 301a of the first metal layer as anode, second end 302b is as negative electrode, apply to load forward bias at first node pad 304, simultaneously at the voltage that first node pad 304 place sensing produces.Electromigratory existence in the second metal level 303 is represented by the resistance variations of reflected over time the second metal level 303 of the voltage sensed according to Ohm's law; All right, the first end 301a of the first metal layer is as negative electrode, and the second end 302b, as anode, applies to load forward bias at Section Point pad 304 ', simultaneously at the voltage that Section Point pad 304 ' place sensing produces.Electromigratory existence in the second metal level 303 is represented by the resistance variations of reflected over time the second metal level 303 of the voltage sensed according to Ohm's law.
No matter the present embodiment is apply bias voltage on first node pad 304 or Section Point pad 304 ', the electric current produced is split into 3 strands by 3 inputs of corresponding node pad, then filling through hole is aggregated into from three contact arms of the respective end of the first metal layer, effectively reduce the first metal layer current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in the first metal layer and peripheral region, filling through hole contact position, ensure that the success of the electro-migration testing of the second metal level is carried out, improve the success rate of metal interconnecting charge transfer test.
Embodiment three
Please refer to Fig. 4 A and 4B, the present embodiment provides a kind of metal interconnecting charge transfer test structure, comprise the first metal layer with first end 401a and the second end 401b, the second metal level 403 treating electro-migration testing and with two-layer the first filling through hole 402a of directly contacting and the second filling through hole 402b, described first end 401a is conducted by the first filling through hole 402a and described second metal level 403, and described second end 401b is conducted by the second filling through hole 402b and described second metal level 403.
In the present embodiment, described metal interconnecting charge transfer test structure also comprises the first node pad 404 being positioned at described first end 301a and the first node pad 404 ' being positioned at described second end 401b; Described first node pad 404 is for applying test voltage and sensing voltage, and there are 2 inputs 404a, 404b, first end 401a isolates contact arm I, II on 2 directions by dielectric (not shown), in the inter-level dielectric of conductive plunger 405 array between node pad 404 and first end 401a (not shown), it is bottom contact input 404a, 404b and contact arm I, II respectively up and down, and input 404a, 404b and contact arm I, II are by the conducting of conductive plunger 405 array electric; Described Section Point pad 404 ' is for applying test voltage and sensing voltage, and there are 2 input 404a ', 404b ', second end 401b isolates contact arm I ', II ' on 2 directions by dielectric (not shown), conductive plunger 405 array is arranged in the inter-level dielectric (not shown) between node pad 404 ' and the second end 401b, upper and lower bottom respectively contact input 404 ' a, 404 ' b, with contact arm I ', II ', input 404 ' a, 404 ' b and contact arm I ', II ' are by the conducting of conductive plunger 405 array electric.
When the metal interconnecting charge transfer test structure of application the present embodiment carries out electro-migration testing to the second metal level 403, can the first end 401a of the first metal layer as anode, second end 402b is as negative electrode, apply to load forward bias at first node pad 404, simultaneously at the voltage that first node pad 404 place sensing produces.Electromigratory existence in the second metal level 403 is represented by the resistance variations of reflected over time the second metal level 403 of the voltage sensed according to Ohm's law; All right, the first end 401a of the first metal layer is as negative electrode, and the second end 402b, as anode, applies to load forward bias at Section Point pad 304 ', simultaneously at the voltage that Section Point pad 404 ' place sensing produces.Electromigratory existence in the second metal level 403 is represented by the resistance variations of reflected over time the second metal level 403 of the voltage sensed according to Ohm's law.
No matter the present embodiment is apply bias voltage on first node pad 404 or Section Point pad 404 ', the electric current produced is split into 2 strands by 2 inputs of corresponding node pad, then filling through hole is aggregated into from 2 contact arms of the respective end of the first metal layer, effectively reduce the first metal layer current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in the first metal layer and peripheral region, filling through hole contact position, ensure that the success of the electro-migration testing of the second metal level is carried out, improve the success rate of metal interconnecting charge transfer test.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a metal interconnecting charge transfer test structure, comprise the first metal layer and the second metal level treating electro-migration testing, described the first metal layer has first end and the second end, and conducts respectively by a filling through hole and described second metal level; Described metal interconnecting charge transfer test structure also comprises the node pad being positioned at described first end and/or the second end, described node pad is for applying test voltage and sensing voltage, and described node spacer has multiple input, described multiple input connects first end or the second end from different directions; Wherein, the width of described the first metal layer and filling through hole contact position is greater than width and the filling through hole diameter of the second metal level.
2. metal interconnecting charge transfer test structure as claimed in claim 1, it is characterized in that, described input is conducted by conductive plunger and the first metal layer.
3. metal interconnecting charge transfer test structure as claimed in claim 2, it is characterized in that, the quantity of the conductive plunger in each direction is multiple.
4. metal interconnecting charge transfer test structure as claimed in claim 3, it is characterized in that, the conductive plunger in each direction forms an array.
5. metal interconnecting charge transfer test structure as claimed in claim 4, is characterized in that, described array is circular or rectangle.
6. metal interconnecting charge transfer test structure as claimed in claim 1, it is characterized in that, the quantity of described input is 2 ~ 4.
7. metal interconnecting charge transfer test structure as claimed in claim 1, it is characterized in that, one end that described the first metal layer is connected to node pad is respectively equipped with one for connecting the contact arm of the input of described node pad on described different directions.
8. metal interconnecting charge transfer test structure as claimed in claim 2, it is characterized in that, described conductive plunger is contact hole plug or via plug.
9. metal interconnecting charge transfer test structure as claimed in claim 1, it is characterized in that, described second metal level is the first layer metal line M1 in multilayer interconnection line structure, and described the first metal layer is other layer of metal wire Mx, and wherein, x is more than or equal to 2.
10. metal interconnecting charge transfer test structure as claimed in claim 1, it is characterized in that, described the first metal layer is the first layer metal line M1 in multilayer interconnection line structure, and described second metal level is other layer of metal wire Mx, and wherein, x is more than or equal to 2.
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| CN201210183140.8A CN103456718B (en) | 2012-06-05 | 2012-06-05 | Metal interconnecting charge transfer test structure |
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| CN201210183140.8A CN103456718B (en) | 2012-06-05 | 2012-06-05 | Metal interconnecting charge transfer test structure |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900629B (en) * | 2014-03-04 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of test structure for detecting skew |
| CN103887282B (en) * | 2014-03-20 | 2016-08-17 | 上海华力微电子有限公司 | A kind of metal electro-migration structure |
| CN105093086B (en) * | 2014-04-24 | 2018-05-11 | 中芯国际集成电路制造(上海)有限公司 | The detection structure and detection method of a kind of electromigration |
| CN108428639B (en) * | 2018-04-03 | 2020-11-03 | 武汉新芯集成电路制造有限公司 | Method for realizing conversion from open circuit to short circuit of integrated circuit connecting wire |
| CN111653550B (en) * | 2020-06-29 | 2023-09-29 | 上海华力微电子有限公司 | Electromigration test structure |
| CN112379245B (en) * | 2020-11-11 | 2023-08-11 | 上海华力集成电路制造有限公司 | Metal electromigration test structure and test method thereof |
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| CN201017877Y (en) * | 2007-03-06 | 2008-02-06 | 中芯国际集成电路制造(上海)有限公司 | Staged thru hole chain structure easy to test reliability |
| CN101383308A (en) * | 2007-09-04 | 2009-03-11 | 台湾积体电路制造股份有限公司 | Method for measuring a property of interconnections and structure for the same |
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| CN201017877Y (en) * | 2007-03-06 | 2008-02-06 | 中芯国际集成电路制造(上海)有限公司 | Staged thru hole chain structure easy to test reliability |
| CN101383308A (en) * | 2007-09-04 | 2009-03-11 | 台湾积体电路制造股份有限公司 | Method for measuring a property of interconnections and structure for the same |
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