CN105093086B - The detection structure and detection method of a kind of electromigration - Google Patents
The detection structure and detection method of a kind of electromigration Download PDFInfo
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- CN105093086B CN105093086B CN201410167096.0A CN201410167096A CN105093086B CN 105093086 B CN105093086 B CN 105093086B CN 201410167096 A CN201410167096 A CN 201410167096A CN 105093086 B CN105093086 B CN 105093086B
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- ring oscillator
- detection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
- G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
Abstract
The present invention relates to the detection structure and detection method of a kind of electromigration, the detection structure includes electromigration detection unit and stress current unit；The stress current unit includes ring oscillator, resistor R0And controlling transistor, wherein the output terminal of the ring oscillator and the resistor R0First end be connected, the grid of the output terminal of the ring oscillator also with the controlling transistor is connected；The resistor R0Second end be connected with the electromigration detection unit, the drain electrode of the controlling transistor and the resistor R0Second end be connected；Wherein described ring oscillator is respectively connected to the first supply voltage Vdd1 and second source voltage Vdd2, and the source electrode of the controlling transistor is connected with the first supply voltage Vdd1.Test structure of the present invention is easily operated and tests, and with little need for extra hardware and other expensive equipment, reduces testing cost.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to the detection structure and detection method of a kind of electromigration.
Background technology
With the sustainable development of integrated circuit technique, more devices will be integrated on chip, chip will also use speed faster
Degree.Under the propulsion of these requirements, the physical dimension of device will constantly reduce, and constantly green wood is used in the manufacturing process of chip
Material, new technology and new manufacturing process.The preparation of semiconductor devices at present has evolved to Nano grade, while conventional device
Preparation process is gradually ripe.
Electromigration (EM) is one of failure mechanism main in microelectronic component, and electromigration causes the open circuit of metallization and short
Road, increases device creepage.After device develops to sub-micron, deep-submicron, the width of metal wire constantly reduces, and electric current is close
Degree is continuously increased, it is easier to is failed because of electromigration.Therefore, with the progress of technique, the evaluation attention of EM.
The immediate cause for causing electromigration is the movement of metallic atom.When passing through high current in interconnecting line, electrostatic field
Power drives electronics that energy exchange occurs from cathode to anode movement, electronics and the metallic atom of high-speed motion, and atom is subject to fiercely
Electron bombardment power, here it is so-called electronics wind-force.But in fact metallic atom is also subject to the electrostatic field of opposite direction at the same time
Power.When the current density in interconnection line is higher, to a large amount of electron collision atoms of anode movement so that what metallic atom was subject to
Electronics wind-force is more than electrostatic field force.Therefore, metallic atom is driven be subject to electronics wind-force, it is oriented expansion from cathode to anode
Dissipate, so that electromigration occur.
Electromigration is the metal migration phenomena that metal wire produces under electric current and temperature action, it may make metal wire break
Split, so as to influence the normal work of chip.Electromigration is easier to produce on the line that high current density and high-frequency change,
Such as power supply, clock line.In order to avoid electromigration effect, the width of line can be increased, it is close by the electric current of line to ensure
Degree is less than a definite value.
The problem of usual EMI effects cause is the increase of power grid resistance, so as to cause IR drop increases, so as to influence circuit
Sequential.In addition, carried with time correlation dielectric breakdown TDDB (time dependent dielectric breakdown), heat
Flow sub- injection effect HCI (hot carrier injection), hot carrier injection effect HCI (hot carrier
Injection) and Negative Bias Temperature Instability (NBTI) all becomes an important factor for weighing device stability.
Electromigration (EM) is usually modeled and suitable for direct current (DC) in the prior art, but most of productions at present
Product connect and use for alternating current (AC), therefore, the evaluation for alternating current electromigration (EM) performance is also extremely important, not only
It is limited only to direct current.
Conventional alternating current electromigration (AC EM) detection structure is moved by alternating current stress equipment in the direct current electricity
Moving in (DC EM) structure and run, alternating current electromigration (AC EM) detection structure and the DC installation are entirely different,
And price is very expensive.
Therefore, not only price is very expensive for alternating current electromigration (AC EM) detection structure in the prior art, but also cannot be same
When DC EM are detected, it is necessary to run in direct current electromigration (DC EM) structure, and the alternating current electromigration (AC
EM) detection structure and the DC installation are entirely different, the problem of bringing many drawbacks to detection, become urgent need to resolve.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will in specific embodiment part into
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features, do not mean that the protection domain for attempting to determine technical solution claimed more.
The present invention is in order to overcome the problem of presently, there are, there is provided a kind of detection structure of electromigration, including electromigration detection
Unit and stress current unit；
The stress current unit includes ring oscillator, resistor R0And controlling transistor, wherein the annular is shaken
Swing the output terminal of device and the resistor R0First end be connected, the output terminal of the ring oscillator is also brilliant with the control
The grid of body pipe is connected；The resistor R0Second end be connected with the electromigration detection unit, the control crystal
The drain electrode of pipe and the resistor R0Second end be connected；
Wherein described ring oscillator is respectively connected to the first supply voltage Vdd1 and second source voltage Vdd2, the control
The source electrode of transistor processed is connected with the first supply voltage Vdd1.
Preferably, the electromigration detection unit includes：
Device under test；
First power connector end and second source connecting pin, respectively the both ends with the device under test be connected.
Preferably, the electromigration detection unit still further comprises metal throuth hole, for first power supply to be connected
Connect end and the second source connecting pin is connected with the both ends of the device under test.
Preferably, the resistor R0Second end be connected with first power connector end, the control crystal
The drain electrode of pipe is connected with first power connector end.
Preferably, the ring oscillator includes the odd number NOT gate of 3 or more, wherein the odd number NOT gate
Input terminal and output terminal join end to end, and form the ring oscillator.
Preferably, each NOT gate includes a nmos pass transistor and a PMOS transistor.
Preferably, the grid of wherein described nmos pass transistor is connected with the grid of the PMOS transistor, to be formed
State the input terminal of NOT gate；
The drain electrode of the nmos pass transistor is connected with the drain electrode of the PMOS transistor, to form the output of the NOT gate
End；
The source electrode of the nmos pass transistor connects the second source voltage Vdd2, the source electrode connection of the PMOS transistor
The first supply voltage Vdd1.
Preferably, the resistor R0Resistance value be 1-10000 ohm.
Preferably, the controlling transistor selects nmos pass transistor, to control direct current to be hit with time correlation dielectric
Wear and alternating current and time correlation dielectric breakdown.
Present invention also offers the detection method of above-mentioned detection structure, including：
Step (a) applies the first identical supply voltage Vdd1 and second source electricity at the both ends of the stress current unit
Vdd2 is pressed, the controlling transistor is in off state, the resistor R0It is in running order, the stress current unit production
Raw alternating current；
Or step (b) applies the first opposite supply voltage of size equidirectional at the both ends of the stress current unit
Vdd1 and second source voltage Vdd2, the controlling transistor conducting, the resistor R0In short-circuit condition, the stress electricity
Flow unit and produce DC current.
Preferably, the frequency of the alternating current produced in the step (a) is by the resistor R0Size determine.
Preferably, the time of the raising and lowering of the alternating current produced in the step (a) is by the ring oscillation
The channel width of transistor determines in device.
The present invention provides a kind of electro-migration testing structure, the structure can not only provide alternating current electro-migration testing,
Direct current electro-migration testing can also be provided.
Test structure combination ring oscillator circuit of the present invention, control gate and resistance, to be answered for producing exchange
Power electric current.The test structure is easily operated and test, and with little need for extra hardware and other are expensive
Equipment, reduces testing cost.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 be it is existing be electromigration detection structure in technology structure diagram；
Fig. 2 is the structure diagram of electromigration detection structure in the embodiment of the invention；
Fig. 3 a-3b are electricity when applying the different voltage in direction in the embodiment of the invention in electromigration detection structure
Flow direction schematic diagram and current shape schematic diagram.
Embodiment
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in Ceng He areas may be exaggerated.From beginning to end
Same reference numerals represent identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, its can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
Person may have element or layer between two parties.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or when " being directly coupled to " other elements or layer, then there is no element or layer between two parties.It should be understood that although it can make
Various elements, component, area, floor and/or part are described with term first, second, third, etc., these elements, component, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish an element, component, area, floor or part with it is another
One element, component, area, floor or part.Therefore, do not depart from present invention teach that under, the first element discussed below, portion
Part, area, floor or part are represented by the second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and by using so as to describe an element shown in figure or feature with
The relation of other elements or feature.It should be understood that in addition to the orientation shown in figure, spatial relationship term is intended to further include to make
With the different orientation with the device in operation.For example, if the device upset in attached drawing, then, is described as " under other elements
Face " or " under it " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or component, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, component and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Explain technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, this
Invention can also have other embodiment.
In order to solve the problems in the existing technology the present invention provides a kind of detection structure of direct current electromigration, wrap
Include two parts：
Electromigration detection unit, selects the conventional EM test structures generally used in the prior art, in the test structure
Including：Device under test, and the first power connector end and second source connecting pin, respectively the both ends with the device under test be connected
Connect, preferably, wherein described first power connector end and the second source connecting pin pass through through hole and the device under test
Connection.
As further, preferably, the detection unit, which further includes, tests connecting pin, and the test connecting pin is treated with described
Survey device to be connected, for the electromigration to detecting the device under test.
Stress current unit, including ring oscillator, resistor and controlling transistor, wherein the ring oscillator
Output terminal and the resistor R0First end be connected, the output terminal of the ring oscillator also with the controlling transistor
Grid is connected, for producing alternating current and direct current.Wherein, the ring oscillator can provide the bigoted electricity of exchange of rule
Stream, the number of NOT gate described in the ring oscillator is odd number.
Wherein described resistor R0For adjusting the size of the stress current of output, wherein, the stress current I_stress
=Vdd/R0, pass through regulating resistor R0Size to obtain different stress current I_stress, wherein the resistor R0It is big
Small is 1-10000 ohm.
The wherein controlling transistor selects nmos pass transistor, and the control gate in the nmos pass transistor is used for controlling straight
Galvanic electricity and time correlation dielectric breakdown and alternating current and time correlation dielectric breakdown.
The first supply voltage Vdd1, the other end of the stress current unit are connected in one end of the stress current unit
Second source voltage Vdd2 is connected, when the Vdd1=Vdd2=V stress, controlling transistor turns at this time, in the grid
DC stress is produced, when the Vdd1=-Vdd2=V stress, the grid of the controlling transistor is in off state at this time,
The resistor is in running order, produces exchange stress, wherein the size of the exchange stress is by the resistor R0It is big
Small decision, the time of the raising and lowering of the exchange stress is determined by the width of NMOS, PMOS raceway groove in ring oscillator, is led to
The test structure is crossed, can continuously apply exchange stress on the device under test.
Embodiment 1
2 pairs of electro-migration testing structures of the present invention are described further below in conjunction with the accompanying drawings.
In the electromigration detection unit, the conventional EM test structures generally used in the prior art are selected, such as Fig. 1 institutes
Show, include in the test structure：Device under test 203, and the first power connector end 201 and 201 ˊ of second source connecting pin points
Both ends not with the device under test are connected.
Preferably, wherein described first power connector end 201 and 201 ˊ of second source connecting pin pass through metal throuth hole 202
Connected with the device under test 203.
Wherein described device under test 203 is located at the top of the power connector end, wherein the first power connector end 201 and
Two power connector ends, 201 ˊ selects metal layer, the device under test 203 and first power connector end 201 and second source to connect
Connect end 201 ˊ between can also be further provided with dielectric layer between metal layers, for isolating the device under test 203 and the electricity
Source connection, as shown in Figure 2.
Wherein described metal throuth hole selects tungsten or aluminium, and the device under test 203 selects tungsten, first electricity
Source connection 201 and 201 ˊ of second source connecting pin can select metal material commonly used in the art.
As further, preferably, the detection unit, which further includes, tests connecting pin, and the test connecting pin is treated with described
Survey device to be connected, for the electromigration to detecting the device under test.
Further, first power connector end 201 and 201 ˊ of second source connecting pin can be from the device under test
The weld pad that both ends respectively connect；The test connecting pin can be that a weld pad is connected from the device under test, but simultaneously
It is not limited to the example.
Wherein described stress current unit, including ring oscillator, resistor and controlling transistor, wherein the annular
The output terminal of oscillator and the resistor R0Be connected, the output terminal of the ring oscillator also with the controlling transistor
Grid is connected, for producing alternating current and direct current.
Wherein, the ring oscillator can provide the bigoted electric current of exchange of rule, described in the ring oscillator
The number of NOT gate is odd number.
As shown in Fig. 2, the ring oscillator includes 3 NOT gates in this embodiment, wherein, 3 NOT gates it is defeated
Enter end and output terminal joins end to end, to form the ring oscillator.
In the NOT gate, including NMOS and PMOS transistor, wherein what the grid of the transistor was connected
Input terminal of the one end as NOT gate, output terminal of the connected one end of the drain electrode as the NOT gate.
Further, the resistor R0One end be connected with the output terminal of the stress current unit, the other end and institute
State electromigration detection unit to be connected, specifically, be connected with the first power connector end 201 in the electromigration detection unit.
The detection structure still further comprises the first supply voltage Vdd1 and second source voltage Vdd2, connects institute respectively
State the both ends of stress current unit；
Wherein, the source electrode of the controlling transistor is connected with the first supply voltage Vdd1, the controlling transistor
Drain electrode be connected with the electromigration detection unit, specifically, and the first power connector end 201 in the electromigration detection unit
It is connected.
Further, in the ring oscillator, the source electrode of NMOS and the second source voltage Vdd2 in the NOT gate
It is connected, the source electrode of the PMOS is connected with the first supply voltage Vdd1, as shown in Figure 2.
Further, the controlling transistor selects nmos pass transistor, to control direct current and time correlation dielectric breakdown
With alternating current and time correlation dielectric breakdown.
Wherein described resistor R0For adjusting the size of the stress current of output, wherein, the stress current I_stress
=Vdd/R0, pass through regulating resistor R0Size to obtain different stress current I_stress, wherein the resistor R0It is big
Small is 1-10000 ohm.
Embodiment 2
Present invention also offers a kind of detection method of the detection structure, including：
Step (a) applies the first identical supply voltage Vdd1 and second source electricity at the both ends of the stress current unit
Vdd2 is pressed, the controlling transistor is in off state, the resistor R0It is in running order, the stress current unit production
Raw alternating current；
Or step (b) applies the first opposite supply voltage of size equidirectional at the both ends of the stress current unit
Vdd1 and second source voltage Vdd2, the controlling transistor conducting, the resistor R0In short-circuit condition, the stress electricity
Flow unit and produce DC current.
Voltage Vdd1, the other end connection voltage of the stress current unit are connected in one end of the stress current unit
Vdd2。
In step (a), when the Vdd1=-Vdd2=V stress, the grid of the controlling transistor is in disconnected at this time
Line state, as shown in Figure 3a, the resistor are in running order, produce alternating current, act on the electromigration detection unit.
The alternating current produced in this step is as shown in small figure in Fig. 3 a, wherein the alternating current is the alternating current of rectangle,
The size of wherein described alternating current is by the resistor R0Size determine, the time of the raising and lowering of the alternating current is by ring
The width of NMOS, PMOS raceway groove determines in shape oscillator, can be continuous on the device under test by the test structure
Apply alternating current.
In step (b), as the Vdd1=Vdd2, controlling transistor turns at this time, and direct current is produced in the grid
Stress, as shown in Figure 3b, at this time, the current direction is as shown in the direction of arrow in Fig. 3 b, the resistor in this case
R0In short-circuit condition.
The present invention provides a kind of electro-migration testing structure, the structure can not only provide alternating current electro-migration testing,
Direct current electro-migration testing can also be provided.
Test structure combination ring oscillator circuit of the present invention, control gate and resistance, to be answered for producing exchange
Power electric current.The test structure is easily operated and test, and with little need for extra hardware and other are expensive
Equipment, reduces testing cost.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in the range of described embodiment.In addition people in the art
Member is it is understood that the invention is not limited in above-described embodiment, teaching according to the present invention can also be made more kinds of
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (12)
1. a kind of detection structure of electromigration, including electromigration detection unit and stress current unit；
The stress current unit includes ring oscillator, resistor R0And controlling transistor, wherein the ring oscillator
Output terminal and the resistor R0First end be connected, the output terminal of the ring oscillator also with the controlling transistor
Grid is connected；The resistor R0Second end be connected with the electromigration detection unit, the leakage of the controlling transistor
Pole and the resistor R0Second end be connected；
Wherein described ring oscillator is respectively connected to the first supply voltage Vdd1 and second source voltage Vdd2, and the control is brilliant
The source electrode of body pipe is connected with the first supply voltage Vdd1.
2. detection structure according to claim 1, it is characterised in that the electromigration detection unit includes：
Device under test；
First power connector end and second source connecting pin, respectively the both ends with the device under test be connected.
3. detection structure according to claim 2, it is characterised in that the electromigration detection unit still further comprises gold
Belong to through hole, for first power connector end and the second source connecting pin to be connected with the both ends of the device under test
Connect.
4. detection structure according to claim 2, it is characterised in that the resistor R0Second end with described first electricity
Source connection is connected, and the drain electrode of the controlling transistor is connected with first power connector end.
5. detection structure according to claim 1, it is characterised in that the ring oscillator includes 3 or more strange
Several NOT gates, wherein the input terminal and output terminal of the odd number NOT gate join end to end, form the ring oscillator.
6. detection structure according to claim 5, it is characterised in that each NOT gate includes a nmos pass transistor
With a PMOS transistor.
7. detection structure according to claim 6, it is characterised in that the grid of wherein described nmos pass transistor and described
The grid of PMOS transistor is connected, to form the input terminal of the NOT gate；
The drain electrode of the nmos pass transistor is connected with the drain electrode of the PMOS transistor, to form the output terminal of the NOT gate；
The source electrode of the nmos pass transistor connects the second source voltage Vdd2, described in the source electrode connection of the PMOS transistor
First supply voltage Vdd1.
8. detection structure according to claim 1, it is characterised in that the resistor R0Resistance value be 1-10000 Europe
Nurse.
9. detection structure according to claim 1, it is characterised in that the controlling transistor selects nmos pass transistor, with
Control direct current and time correlation dielectric breakdown and alternating current and time correlation dielectric breakdown.
10. a kind of detection method of the detection structure based on described in one of claim 1 to 9, including：
Step (a) applies identical the first supply voltage Vdd1 and second source voltage at the both ends of the stress current unit
Vdd2, the controlling transistor are in off state, the resistor R0In running order, the stress current unit produces
Alternating current；
Or step (b) apply at the both ends of the stress current unit the first opposite supply voltage Vdd1 of size equidirectional and
Second source voltage Vdd2, the controlling transistor conducting, the resistor R0In short-circuit condition, the stress current unit
Produce DC current.
11. detection method according to claim 10, it is characterised in that the alternating current produced in the step (a)
Frequency is by the resistor R0Size determine.
12. detection method according to claim 10, it is characterised in that the alternating current produced in the step (a)
The time of raising and lowering is determined by the channel width of transistor in the ring oscillator.
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| CN112117785B (en) * | 2019-06-19 | 2022-09-09 | Oppo广东移动通信有限公司 | Charging circuit, charging chip, mobile terminal and charging system |
| CN113176482B (en) * | 2020-01-08 | 2023-03-07 | 中芯国际集成电路制造（天津）有限公司 | Test circuit, test system and test method thereof |
| CN113552457B (en) | 2020-04-03 | 2022-11-15 | 长鑫存储技术有限公司 | Test circuit and semiconductor test method |
| CN112379245B (en) * | 2020-11-11 | 2023-08-11 | 上海华力集成电路制造有限公司 | Metal electromigration test structure and test method thereof |
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| CN1669221A (en) * | 2002-07-16 | 2005-09-14 | 皇家飞利浦电子股份有限公司 | Ring oscillator with frequency stabilization |
| CN101473237A (en) * | 2006-06-20 | 2009-07-01 | Nxp股份有限公司 | Semiconductor device with test structure and semiconductor device test method |
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| JP2012083262A (en) * | 2010-10-13 | 2012-04-26 | Advantest Corp | Testing device and testing method |
| TWI483251B (en) * | 2012-02-24 | 2015-05-01 | Univ Nat Chiao Tung | An oscillator based on a 6t sram for measuring the bias temperature instability |
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|---|---|---|---|---|
| CN1669221A (en) * | 2002-07-16 | 2005-09-14 | 皇家飞利浦电子股份有限公司 | Ring oscillator with frequency stabilization |
| CN101473237A (en) * | 2006-06-20 | 2009-07-01 | Nxp股份有限公司 | Semiconductor device with test structure and semiconductor device test method |
| CN102590735A (en) * | 2012-02-16 | 2012-07-18 | 复旦大学 | Circuit and method for testing reliability of integrated circuit |
| CN103456718A (en) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Metal interconnecting wire electromigration test structure |
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